CN117047284A - Laser polishing-detecting integrated process for semiconductor production - Google Patents

Laser polishing-detecting integrated process for semiconductor production Download PDF

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Publication number
CN117047284A
CN117047284A CN202310882516.2A CN202310882516A CN117047284A CN 117047284 A CN117047284 A CN 117047284A CN 202310882516 A CN202310882516 A CN 202310882516A CN 117047284 A CN117047284 A CN 117047284A
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China
Prior art keywords
laser
semiconductor
polishing
diameter
intensity
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CN202310882516.2A
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Chinese (zh)
Inventor
管迎春
周运龙
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Beihang University
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Beihang University
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Publication of CN117047284A publication Critical patent/CN117047284A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a laser polishing-detecting integrated process for semiconductor production. The technical scheme of the invention comprises the following steps: fixing a laser and a laser acquisition and analysis device, and placing a semiconductor reaching a polishing index at a groove of a platform; irradiating the semiconductor surface with laser light, and measuring the diameter and intensity of the reflected light beam by using an acquisition and analysis device; performing the previous operation on a plurality of semiconductors meeting the polishing index, recording the reflected light diameter and intensity of the samples, and constructing a diameter and intensity database; and (3) adjusting laser parameters to polish the semiconductor, irradiating the polished surface of the semiconductor after changing laser power, measuring the diameter and intensity of reflected light, and judging whether the semiconductor meets the index requirement of polishing according to a database. According to the invention, the detection of the semiconductor polishing index is converted into the measurement of the intensity and the diameter of the laser reflected beam, so that the laser polishing detection integrated process is constructed, the detection flow is simplified, the production efficiency is further improved, and the cost is reduced.

Description

Laser polishing-detecting integrated process for semiconductor production
Technical Field
The invention belongs to the technical field of semiconductor device manufacturing, and particularly relates to a laser polishing-detecting integrated process for semiconductor production.
Background
At present, with the rising development of new energy automobiles, 5G, artificial intelligence, the Internet of things and other emerging industries, huge semiconductor product demands are generated, and a wide market space is provided for the development of semiconductor material enterprises. The polishing of the semiconductor is an important step in the manufacturing process of the semiconductor, and defects such as oxide layers, bulges, pits, impurities and the like on the surface of the semiconductor wafer can be removed, so that the quality and the reliability of the wafer are improved. Meanwhile, because the manufacture of the semiconductor device requires high-precision processing, the flatness and the smoothness of the surface of the wafer have great influence on the performance of the device, and the polishing can enable the surface of the wafer to be smoother and smoother, so that the stability of the performance of the device is ensured. Therefore, polishing treatment of semiconductors becomes more indispensable in the semiconductor manufacturing process.
The methods commonly used for polishing effect detection at present are as follows: a. and measuring parameters such as roughness, flatness, surface profile and the like of the surface of the wafer by a surface roughness meter, thereby evaluating the polishing effect. b. And (3) carrying out high-resolution microscopic observation on the surface of the wafer by using an optical microscope, and detecting surface defects, oxide layers, pollutants and the like. c. High-resolution microscopic observation of the wafer surface is performed using a scanning electron microscope, and surface defects, impurities, and the like are detected. d. And carrying out nano-scale microscopic observation on the surface of the wafer by means of an atomic force microscope, and detecting parameters such as surface roughness, flatness and the like. However, it should be noted that the above detection method is complicated to operate, complicated in procedure, expensive, and not suitable for industrial production applications. In addition, under the global background of 'core missing', the improvement of the production efficiency of the semiconductor chip is urgent, so that the polishing detection is used as a part of the production flow, the detection time is also required to be shortened, and the detection efficiency is also required to be improved.
Disclosure of Invention
The invention aims to solve the problem of low polishing and detecting efficiency of a current semiconductor, and provides a laser polishing-detecting integrated process for semiconductor production. According to the invention, the reflected laser of a plurality of semiconductor samples meeting the polishing index is measured, a laser reflected beam intensity and diameter database is constructed, and whether the reflected light intensity and diameter of the semiconductor to be tested accord with the database is measured and checked, so that whether the semiconductor polishing is qualified and whether the polishing process is finished is judged, further the improvement of the semiconductor polishing detection efficiency is realized, and the cost is reduced.
A laser polishing-inspection integrated process for semiconductor production, comprising the steps of:
step one: installing a laser and a laser acquisition and analysis device at a designated position, and fixing a semiconductor meeting polishing indexes at a sample designated position on a platform;
step two: setting proper laser power and focusing spot diameter, turning on a laser to irradiate the semiconductor surface, measuring the diameter and intensity of the reflected light beam on the semiconductor surface by using a laser acquisition and analysis device, and recording the light beam intensity and diameter data;
step three: performing the second operation on a plurality of semiconductors meeting the polishing index, sorting the reflected laser beam diameter and intensity data of the semiconductors, and constructing a related database;
step four: placing a semiconductor to be polished at the groove of the sample, and adjusting laser parameters to polish the semiconductor;
step five: adjusting the angle of the platform, changing the laser power and the focusing diameter, enabling the laser to irradiate the polished semiconductor surface, and measuring the diameter and the intensity of the reflected light beam through a laser acquisition and analysis device;
step six: checking the database, judging whether the measured reflected light diameter and intensity are in the range of the database, and further determining whether the semiconductor reaches the polishing index;
step seven: if the polishing index of the semiconductor is met, the sample is moved out of the working area, and the process is finished; if the polishing requirement of the semiconductor is not met, returning to the fourth step to continue polishing.
The laser used for laser polishing and detection is a general category and includes, but is not limited to, gas lasers (including excimer), liquid lasers (including dye), solid state lasers (including solid, semiconductor, fiber, hybrid), and the like.
The laser acquisition and analysis device is not a specific device, but a device formed by a plurality of instruments for acquiring and analyzing laser.
The platform for laser polishing detection is characterized in that the angle is adjusted from 0 degree to 90 degrees by adjusting the height of a support frame in a platform interlayer, and the preferable platform adjusting angle is 45 degrees; the grooves on the platform are used for fixing the sample and preventing the semiconductor sample from sliding down in the process of tilting the platform.
The laser detection method is realized according to optical phenomena and geometric optical theory, and the detection flow forms a polishing feedback adjustment module.
The laser polishing is characterized in that: the laser power is 0.1-3000W, the scanning speed is 10-3000 mm/s, the scanning interval is 2-1500 mu m, and the laser focusing light spot is 0.1-2000 mu m.
The laser detection is characterized in that: the laser power is 0.1-60W, and the focusing light spot is 60-500 mu m.
The semiconductor is mainly hard and brittle materials which are difficult to process in the third generation and the fourth generation, such as silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN) and gallium oxide (Ga) 2 O 3 ) And diamond, etc.
The surface roughness of the polished semiconductor is less than or equal to 0.35nm, and certain roughness still exists, so that the laser can be diffusely reflected during detection, and the collected reflected light intensity is slightly lower than the incident light intensity.
The semiconductor needs to be cleaned after laser polishing and before detection so as to remove impurities interfering with detection results.
Compared with the other, the laser polishing-detecting integrated process for semiconductor production has the advantages that:
(1) The surface smoothness of the polished semiconductor is very high based on the optical phenomenon, the geometrical optical theory and the polished semiconductor, and the reflection phenomenon is easy to occur during laser irradiation, so that the polishing index is converted into the data of the reflected light intensity and the diameter, the detection efficiency is improved, and the detection cost is reduced;
(2) When the semiconductor is polished by the laser, the laser detection method is used as a feedback module in the polishing process, whether the polishing index is met or not is judged according to the reflected light intensity and diameter database, if yes, the polishing is finished, and if not, the polishing is continued, so that the automation and the intellectualization of the polishing-detecting device can be realized.
Drawings
FIG. 1 is a schematic diagram of a laser polish-detection integration process;
FIG. 2 is a flow chart of a laser polish-detection integration process;
fig. 3 is a microscopic schematic view of the laser propagation path of the semiconductor surface after polishing.
Wherein the reference numerals designate: 1-a laser; 2-lens; 3-vibrating mirror; 4-semiconductor; 5-an adjustable platform; 6-a laser acquisition and analysis device; 7-incident laser beam; 8-reflected laser beams which can be collected by the laser collection and analysis device; microcosmic interface of M-semiconductor.
Detailed Description
The laser polishing-inspection integrated process for semiconductor manufacturing according to the present invention will be further described with reference to the accompanying drawings and detailed description, in order to more clearly understand the advantages and features of the present invention, and further to more clearly and definitely define the scope of the present invention.
Description of the preferred embodiments 1
The femtosecond laser and the laser acquisition and analysis device are arranged at the designated position, and the silicon carbide semiconductor which is polished by the femtosecond laser and meets the polishing index is fixed at the designated position of the sample on the adjustable platform.
The laser power is set to be 3W, a femtosecond laser is started, so that laser beams irradiate the polished surface of silicon carbide, the diameter of a focusing light spot is 100 mu m, and the laser acquisition and analysis device is used for measuring the diameter and the intensity of reflected beams on the surface of the silicon carbide and recording the beam intensity and diameter data.
And performing the previous operation on a plurality of silicon carbide semiconductors which have been subjected to laser polishing and meet the polishing index, and finishing the reflected laser beam diameter and intensity data of the silicon carbide to construct a related database.
The platform is adjusted to be parallel to the horizontal plane, silicon carbide to be polished is placed at the groove, laser parameters such as 15W of laser power, 500mm/S of scanning speed, 20 mu m of scanning interval, 35 mu m of laser focusing diameter and the like are adjusted, and then the silicon carbide is polished, as shown in S1 of the attached figure 1.
The angle of the adjusting platform is 45 degrees with the horizontal plane, the laser power is changed to 3W, the focusing diameter is adjusted to 100 mu m, the polished silicon carbide surface is irradiated by laser, and the diameter and the intensity of the reflected light beam are measured by a laser acquisition and analysis device, as shown in S2 in the attached figure 1.
And checking the database, judging whether the measured diameter and strength are in the range of the database, and further verifying whether the measured diameter and strength reach the polishing index.
The silicon carbide semiconductor meeting the polishing index is moved out of the working area, and polishing is finished; if the semiconductor does not meet the polishing index, the polishing process is performed again by adjusting the platen angle, as shown in fig. 2.
Description of the preferred embodiments 2
In this embodiment 2, chemical-mechanical polishing (CMP) was added as a supplement to the laser polishing process in the steps after laser polishing and before inspection, making the semiconductor polishing effect more excellent.
The semiconductor laser and the laser acquisition and analysis device are arranged at the appointed position, and the silicon wafer which is polished by the semiconductor laser and the CMP and meets the polishing index is fixed at the appointed position of the sample on the adjustable platform.
The laser power is set to be 0.1W, a semiconductor laser is started, the laser focusing diameter is kept to be 80 mu m, the laser beam irradiates the polished surface of the silicon wafer, the laser acquisition and analysis device is used for measuring the diameter and the intensity of the reflected beam on the surface of the silicon wafer, and the beam intensity and the diameter data are recorded.
And performing the previous operation on a plurality of silicon wafer which have finished semiconductor laser and CMP polishing and meet polishing indexes, and finishing the reflected laser beam diameter and intensity data of the silicon wafers to construct a related database.
The platform is adjusted to be parallel to the horizontal plane, a silicon wafer to be polished is placed at the groove, laser parameters such as laser power of 0.5W, scanning speed of 1000mm/s, scanning interval of 15 mu m and the like are adjusted, and then the silicon wafer is subjected to laser polishing treatment; after the laser polishing treatment, the silicon wafer is subjected to CMP fine polishing treatment again.
The angle of the adjusting platform forms an included angle of 45 degrees with the horizontal plane, the laser power is adjusted back to 0.1W, the focusing diameter is kept to be 80 mu m, a silicon wafer is arranged at the groove of the platform, the polished surface of the silicon wafer is irradiated by laser, and the diameter and the intensity of a reflected light beam are measured through a laser acquisition and analysis device, as shown in S2 in the attached figure 1.
And checking the database, judging whether the measured diameter and strength are in the range of the database, and further verifying whether the measured diameter and strength reach the polishing index.
The silicon carbide semiconductor meeting the polishing index is moved out of the working area, and polishing is finished; if the semiconductor does not meet the polishing index, the polishing process is performed again by adjusting the platen angle, as shown in fig. 2.
The specific embodiments described above are only part of the present invention and are not intended to limit the scope of the patent. In general, those skilled in the art will be able to make modifications and variations to these specific embodiments after understanding the principles of the present invention, and thus, any modifications, improvements and variations to the present invention without the inventive effort of the skilled person should be within the scope of protection of the present patent.

Claims (9)

1. A laser polishing-inspection integrated process for semiconductor production, comprising the steps of:
step one: installing a laser and a laser acquisition and analysis device at a designated position, and fixing a semiconductor meeting polishing indexes at a designated groove position on a platform;
step two: setting proper laser power and focusing diameter, turning on a laser to irradiate the semiconductor surface, measuring the diameter and intensity of the reflected light beam on the semiconductor surface by using a laser acquisition and analysis device, and recording the light beam intensity and diameter data;
step three: performing the second operation on a plurality of semiconductors meeting the polishing index, sorting the reflected laser beam diameter and intensity data of the semiconductors, and constructing a related database;
step four: placing a semiconductor to be polished at the groove of the platform, and adjusting laser parameters to polish the semiconductor;
step five: adjusting the angle of the platform, changing the laser power and the diameter of a focusing light spot, enabling the laser to irradiate the polished semiconductor surface, and measuring the diameter and the intensity of a reflected light beam through a laser acquisition and analysis device;
step six: checking the database, judging whether the measured reflected light diameter and intensity are in the range of the database, and further determining whether the semiconductor reaches the polishing index;
step seven: if the polishing index of the semiconductor is met, the sample is moved out of the working area, and the process is finished; if the polishing requirement of the semiconductor is not met, returning to the fourth step to continue polishing.
2. The laser for laser polishing, inspection according to claim 1 is a general category including, but not limited to, gas lasers (including excimer), liquid lasers (including dye), solid state lasers (including solid, semiconductor, fiber, hybrid), and the like.
3. The laser light collecting and analyzing device according to claim 1 is not limited to a specific device, but may be a device composed of a plurality of laser light collecting and analyzing instruments.
4. The stage for laser polishing inspection according to claim 1, wherein the adjustment of the angle from 0 ° to 90 ° is achieved by adjusting the height of the support in the stage interlayer, the preferred stage adjustment angle being 45 °; the grooves on the platform are used for fixing the sample and preventing the sample from sliding down in the process of tilting the platform.
5. The laser polishing according to claim 1, characterized in that: the laser power is 0.1-3000W, the scanning speed is 10-3000 mm/s, the scanning interval is 2-1500 mu m, and the laser focusing light spot is 0.1-2000 mu m.
6. The laser detection of claim 1, characterized by: the laser power is 0.1-60W, and the focusing light spot is 60-500 mu m.
7. The semiconductor species of claim 1 being mainly third generation, fourth generation hard and brittle materials such as silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN), gallium oxide (Ga 2 O 3 ) And diamond, etc.
8. The polished semiconductor surface of claim 1 has a roughness of 0.35nm or less, and a diffuse reflection of the laser occurs during the inspection, so that the collected reflected light intensity is slightly lower than the incident light intensity.
9. The semiconductor of claim 1, which is subjected to cleaning after laser polishing and before inspection to remove impurities interfering with inspection results.
CN202310882516.2A 2023-07-18 2023-07-18 Laser polishing-detecting integrated process for semiconductor production Pending CN117047284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310882516.2A CN117047284A (en) 2023-07-18 2023-07-18 Laser polishing-detecting integrated process for semiconductor production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310882516.2A CN117047284A (en) 2023-07-18 2023-07-18 Laser polishing-detecting integrated process for semiconductor production

Publications (1)

Publication Number Publication Date
CN117047284A true CN117047284A (en) 2023-11-14

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Country Status (1)

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