CN117039617A - Vertical cavity surface emitting laser - Google Patents
Vertical cavity surface emitting laser Download PDFInfo
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- CN117039617A CN117039617A CN202311208688.8A CN202311208688A CN117039617A CN 117039617 A CN117039617 A CN 117039617A CN 202311208688 A CN202311208688 A CN 202311208688A CN 117039617 A CN117039617 A CN 117039617A
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- 239000000463 material Substances 0.000 claims abstract description 41
- 238000000605 extraction Methods 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000010410 layer Substances 0.000 description 131
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000002161 passivation Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910015844 BCl3 Inorganic materials 0.000 description 4
- 229910003910 SiCl4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 230000001629 suppression Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18352—Mesa with inclined sidewall
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser, which comprises a circular light emitting window, wherein the light emitting window is divided into a circular central area concentric with the light emitting window and with a slightly smaller radius and a peripheral annular area surrounding the circular central area, a light extraction layer is arranged on the upper surface of the peripheral annular area, the light extraction layer consists of a circular ring part with the thickness lambda/4 of the outer ring and an inclined surface part with the thickness lambda being odd multiple of the thickness lambda of the inner ring, lambda is the emitting laser wavelength of the vertical cavity surface emitting laser, the thickness of the inclined surface part is linearly changed from 0 to the thickness of the circular ring part along with the horizontal distance between the inclined surface of the inclined surface part and the central axis of the light emitting window, the included angle between the inclined surface of the inclined surface part and the central axis of the light emitting window is 35-65 degrees, the material refractive index of the light extraction layer is smaller than that of the light emitting window, and the inclined surface of the inclined surface part is provided with a light reflection structure. Compared with the prior art, the invention can effectively inhibit the generation of transverse high-order modes, thereby improving the performance and reliability of the laser.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser ( Vertical-Cavity Surface-editing Laser, abbreviation VCSEL) 。
Background
The vertical cavity surface emitting laser has higher optical power and can well control the transverse mode, so that the vertical cavity surface emitting laser has great application prospect in the fields of optical communication, gesture sensing sensors, printing, magnetic storage and the like. However, because the device structure has the defects of thin active region, short cavity length, small single-layer gain and the like, in order to improve the effective photon limiting capability, an oxidation limiting DBR (Distributed Bragg Reflector ) structure is adopted at present. The oxide holes formed by the oxide confinement structure have very good lateral control over the current injected into the active region, so that there is little current in the lateral direction. Meanwhile, the oxidation hole structure can also transversely restrict the light emitted by the laser active region to a certain extent, so that the mode of the laser is reduced, and the laser can be well stabilized due to the mode reduction.
The current distribution of the vertical cavity surface emitting laser injected into the active area through the electrode is uneven in the working process, the current at the edge of the electrode is the largest, the uneven distribution phenomenon that the larger the injected current is, the uneven distribution of the light intensity in the light outlet hole of the laser is caused, the light intensity of the outer area is higher than the light intensity of the inner side, the lateral light with the too strong outer side is reflected back to the DBR layer to be possible to form oscillation, laser is generated, particularly the lateral light intensity of the outer side becomes very strong under the condition of high current and is reflected back to the DBR, various high-order lateral modes are formed under the action of oscillation, the laser is switched among various modes in the working process, and the service performance and reliability of the laser are deteriorated. Therefore, it is necessary to perform mode-tuning of the VCSEL to minimize unwanted modes.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects of the prior art and providing the vertical cavity surface emitting laser which can effectively inhibit the generation of a transverse high-order mode so as to improve the performance and the reliability of the laser.
The technical scheme adopted by the invention specifically solves the technical problems as follows:
the utility model provides a perpendicular cavity surface emitting laser, includes circular light-emitting window, light-emitting window divide into with light-emitting window concentric but the radius slightly less circular central region and surround circular central region's peripheral annular region upper surface is provided with the light and takes out the layer, the light takes out the layer and is constituteed by the ring portion that is in the thickness of outer lane lambda/4 odd multiple and the inclined plane portion that is in the inner circle, lambda is this perpendicular cavity surface emitting laser's emission laser wavelength, the thickness of inclined plane portion is from 0 to the ring portion thickness along with the horizontal distance linear variation of light-emitting window center pin, the contained angle between inclined plane surface of inclined plane portion and the light-emitting window center pin is 35 ~ 65, the material refractive index of light takes out the layer is less than the material refractive index of light-emitting window, the inclined plane surface of inclined plane portion is provided with light reflection structure.
Preferably, the light reflecting structure comprises a group of dielectric refractive layers which are arranged on the inclined surface of the inclined surface part and have a material refractive index larger than that of the light extraction layer, the thickness of each dielectric refractive layer is lambda/2, and the material refractive index of each dielectric refractive layer is gradually increased layer by layer along the direction away from the light extraction layer.
Further preferably, the light reflecting structure further comprises a metal reflecting layer disposed on the outer surface of the outermost dielectric refractive layer.
Preferably, the light reflecting structure is a metal reflecting layer arranged on the inclined surface of the inclined surface part.
Further preferably, the thickness of the metal reflective layer is 10 to 200nm.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the invention is realized by the following steps VCSEL The light extraction layer with the inclined surface structure on the inner side is arranged in the area outside the surface of the light outlet window, and the light reflection structure is arranged on the surface of the inclined surface, so that the transverse light outside the light outlet window of the laser is extracted, the probability that the transverse light outside the light outlet window is reflected back to the DBR is greatly reduced, and the possibility that the laser generates a transverse high-order mode is reduced; meanwhile, the light reflection structure arranged on the surface of the inclined surface area can reflect the taken light out of the light outlet window of the laser, so that transverse light outside the light outlet window cannot be reflected back to the DBR, the possibility that the laser generates a transverse high-order mode is avoided, and the working stability and reliability of the laser are improved.
Drawings
FIG. 1 is a top view of a VCSEL of the present invention;
FIG. 2 is a schematic cross-sectional view of a VCSEL of the present invention along the A-A direction with two dielectric refractive layers;
FIG. 3 is a schematic cross-sectional view of a VCSEL of the present invention along the A-A direction with three dielectric refractive layers;
FIG. 4 is a schematic cross-sectional view of a VCSEL of the present invention along the A-A direction having three dielectric refractive layers and a metal reflective layer;
FIG. 5 is a schematic cross-sectional view of a VCSEL of the present invention having two dielectric refractive layers along the B-B direction;
fig. 6 to 27 are schematic views showing a process for fabricating a VCSEL according to the present invention.
The reference numerals in the drawings have the following meanings:
1. a GaAs substrate; 2. a buffer layer; 3. an N-type DBR layer; 4. a quantum well active layer; 5. an oxidation limiting layer; 6. a P-type DBR layer; 7. a passivation layer; 8. a P-type metal; 9. an N-type metal; 10. a light extraction layer; 11. a light reflecting structure; 11-1 to 11-3, a medium refractive layer; 11-4, a metal reflecting layer.
Detailed Description
In order to realize the suppression of the transverse high-order mode of the laser, the invention solves the problems that VCSEL The area outside the surface of the light outlet window is provided with the light extraction layer with the inclined surface structure on the inner side, transverse light outside the light outlet window of the laser is extracted, and the extracted light is reflected out of the light outlet window of the laser by utilizing the light reflection structure arranged on the inclined surface, so that transverse light outside the light outlet window cannot be reflected back to the DBR, and the possibility that the laser generates a transverse high-order mode is avoided.
The technical scheme adopted by the invention specifically solves the technical problems as follows:
the utility model provides a perpendicular cavity surface emitting laser, includes circular light-emitting window, light-emitting window divide into with light-emitting window concentric but the radius slightly less circular central region and surround circular central region's peripheral annular region upper surface is provided with the light and takes out the layer, the light takes out the layer and is constituteed by the ring portion that is in the thickness of outer lane lambda/4 odd multiple and the inclined plane portion that is in the inner circle, lambda is this perpendicular cavity surface emitting laser's emission laser wavelength, the thickness of inclined plane portion is from 0 to the ring portion thickness along with the horizontal distance linear variation of light-emitting window center pin, the contained angle between inclined plane surface of inclined plane portion and the light-emitting window center pin is 35 ~ 65, the material refractive index of light takes out the layer is less than the material refractive index of light-emitting window, the inclined plane surface of inclined plane portion is provided with light reflection structure.
Preferably, the light reflecting structure comprises a group of dielectric refractive layers which are arranged on the inclined surface of the inclined surface part and have a material refractive index larger than that of the light extraction layer, the thickness of each dielectric refractive layer is lambda/2, and the material refractive index of each dielectric refractive layer is gradually increased layer by layer along the direction away from the light extraction layer.
Further preferably, the light reflecting structure further comprises a metal reflecting layer disposed on the outer surface of the outermost dielectric refractive layer.
Preferably, the light reflecting structure is a metal reflecting layer arranged on the inclined surface of the inclined surface part.
Further preferably, the thickness of the metal reflective layer is 10 to 200nm.
For the convenience of public understanding, the following detailed description of the technical scheme of the invention is provided with reference to the accompanying drawings:
the structure of the VCSEL of the present invention is shown in FIGS. 1-4, and includes: the structure of the GaAs substrate 1, the buffer layer 2, the N-type DBR layer 3, the quantum well active layer 4, the oxidation limiting layer 5, the P-type DBR layer 6, the passivation layer 7, the P-type metal 8 and the N-type metal 9 is the same as that of the conventional oxidation limiting VCSEL, wherein an oxidation hole is formed in the middle of the oxidation limiting layer, and the oxidation limiting layer is surrounded by the P-type metal 8 to form a circular light emitting window of the laser. The invention is different from the prior VCSEL in that the light-emitting window is divided into a circular central area concentric with the light-emitting window and with a slightly smaller radius and a peripheral annular area surrounding the circular central area, the upper surface of the peripheral annular area is provided with a light-extracting layer 10, the light-extracting layer 10 consists of an annular part with the thickness of (2n+1) lambda/4 at the outer ring and a bevel part with the inner ring, n is a natural number, lambda is the emitting laser wavelength of the vertical cavity surface emitting laser, the thickness of the bevel part is changed linearly from 0 to the thickness of the annular part along with the horizontal distance from the central axis of the light-emitting window, the included angle between the bevel surface of the bevel part and the central axis of the light-emitting window is 35-65 degrees, the material refractive index of the light-extracting layer is smaller than that of the light-emitting window, and the bevel surface of the bevel part is provided with a light reflecting structure 11. The light extraction layer 10 can extract the lateral light outside the laser light-emitting window, and reflect the extracted light out of the laser light-emitting window through the light reflection structure 11, so that the lateral light outside the light-emitting window is not reflected back to the DBR, and the possibility of generating a lateral higher-order mode by the laser is avoided.
The light reflection structure 11 may be independently constituted by a metal reflection layer provided on the inclined surface of the inclined surface portion; the light extraction device can also be composed of a group of medium refraction layers with material refractive indexes larger than that of the light extraction layer, wherein the medium refraction layers are arranged on the inclined surface of the inclined surface part, the thickness of each medium refraction layer is lambda/2, and the material refractive indexes of the medium refraction layers gradually increase layer by layer along the direction far away from the light extraction layer; or is composed of a group of dielectric refraction layers and an outermost metal reflection layer. Fig. 2 to 4 show three different configurations of the light reflecting structure 11, the light reflecting structure 11 of fig. 2 is composed of two dielectric refraction layers 11-1, 11-2, the light reflecting structure 11 of fig. 3 is composed of three dielectric refraction layers 11-1, 11-2, 11-3, and the light reflecting structure 11 of fig. 4 is composed of three dielectric refraction layers 11-1, 11-2, 11-3 and an outermost metal reflecting layer 11-4.
The light extraction layer 10 can be made of dielectric materials such as Al2O3, siON, siO2, siNx, tiO2, taO2, siO2 and the like; the medium refraction layers 11-1, 11-2 and 11-3 can be made of dielectric materials such as SiNx, tiO2, taO2, siON and the like, and the refractive indexes of the layers can meet the requirements; the metal reflective layer may be made of Ag, al or other metal material, and preferably has a thickness of 10 to 200nm.
In the technical scheme of the invention, the light extraction layer only needs to cover the peripheral annular region of the light-emitting window, but considering the difficulty of process realization, the outer edge of the light extraction layer can exceed the outer edge of the light-emitting window, preferably the surface of the whole active region platform except the circular central region of the light-emitting window is covered, and the annular electrode covered by the light extraction layer can be led out by arranging a conductive channel, as shown in fig. 5.
The VCSEL can be realized by adding a small number of steps on the basis of the existing VCSEL preparation process, the light extraction layer 10 and the light reflection structure 11 can be prepared by using the existing mature semiconductor process, and the realization cost is low. The preparation process is described in further detail in the following by way of a specific example:
the VCSEL fabrication of this embodiment includes the following steps:
step 1, coating photoresist on the surface of an epitaxial wafer (comprising a GaAs substrate, a buffer layer, an N-type DBR layer, a quantum well active layer and a P-type DBR layer from bottom to top), wherein the thickness of the photoresist is 5-15um; exposing and developing the photoresist to obtain circular active platform photoresist, wherein the rest part of the photoresist is not reserved, and the circular active platform photoresist is shown in fig. 6;
step 2, etching the epitaxial wafer obtained in the step 1 by adopting an ICP dry etching process until the epitaxial wafer is etched to 1-10 pairs of P-DBR (distributed Bragg reflector) on the lower layer of the quantum well layer, wherein etching gas is Cl2/BCl3 or Cl2/SiCl4, so as to obtain an active region platform with a step structure, and exposing a high-alumina layer to be oxidized, as shown in FIG. 7; removing the photoresist to obtain an active region platform with a step structure, see fig. 8;
step 3, oxidizing the side wall of the active region platform by adopting a wet oxidation process, oxidizing the peripheral Al in the exposed high-aluminum layer (AlxGa 1-xAs), and forming an oxidation hole in the middle of the active region platform without being oxidized to obtain an active region platform with an oxidation limiting structure, as shown in fig. 9;
step 4, depositing a passivation layer on the surface of the epitaxial wafer obtained in the step 3, wherein the coating process is PECVD or ALD, the film layer is SiNx, siO2, siON, al2O3, tiO2 and the like, the film layer can be a single layer or a lamination of the film materials, and the film thickness is 20-1000nm, and is shown in figure 10;
step 5, carrying out passivation layer metal hole etching on the epitaxial wafer finished in the step 4, wherein etching gas is CF4+Ar or BOE, and obtaining the epitaxial wafer with the filled metal holes, as shown in FIG. 11;
step 6, depositing metal on the epitaxial wafer obtained in the step 5 to fill metal holes, wherein the metal is Au, pt, ag, al, and referring to fig. 12, the circular passivation layer part surrounded by the annular P-type metal is the light emitting window of the laser; the existing preparation process of the oxidation-limited VCSEL can be completed, and only an independent laser or a laser array is needed to be segmented from a wafer according to the requirement;
step 7, depositing a light extraction layer material on the surface of the epitaxial wafer obtained in the step 6, wherein the film thickness of the light extraction layer material is (2n+1) lambda/4, the layer material is a dielectric material such as Al2O3, siON, siO2, siNx, tiO2, taO2, siO2 and the like, and the refractive index of the light extraction layer material is lower than the refractive index of the material of the light extraction window (namely the material refractive index of the passivation layer), and the light extraction layer material is shown in FIG. 13;
step 8, carrying out photoetching and patterning treatment on the light extraction layer material deposited in the step 7, as shown in fig. 14, so that only the central area of a light-emitting window of the laser is free of photoresist, the inner ring of the annular photoresist is provided with an inclined surface structure, and the included angle theta between the inclined surface and the surface of the light-emitting window is 35-65 degrees;
step 9, etching the light extraction layer material on the surface of the epitaxial wafer after the patterning in step 8, see fig. 15; removing the photoresist after etching is finished, wherein a central area part of a light emergent window of the laser is not provided with a light extraction layer, an inner ring of the light extraction layer is provided with an inclined surface structure, and an included angle theta between the inclined surface and the surface of the light emergent window is 35-65 degrees, as shown in fig. 16;
step 10, depositing a first dielectric refraction layer on the surface of the epitaxial wafer finished in the step 9, wherein the thickness lambda/2 of the dielectric refraction layer is made of SiNx, tiO2, taO2, siON and the like, and the refractive index of the material of the first dielectric refraction layer is larger than that of the material of the light extraction layer; see fig. 17;
step 11, coating photoresist on the surface of the epitaxial wafer finished in the step 10, as shown in fig. 18, so that only the central area of the light-emitting window has no photoresist remained;
step 12, performing etching treatment on the epitaxial wafer obtained in the step 11, and adopting an ICP dry etching process, wherein etching gas is Cl2/BCl3 or Cl2/SiCl4, or CF4+Ar, so that only the first dielectric refraction layer material in the central area of the light outlet window is etched, see FIG. 19; removing the photoresist after etching is completed to obtain an epitaxial wafer which is only provided with a first dielectric refractive layer material in the central area of the light emergent window, see FIG. 20;
step 13, depositing a second dielectric refraction layer on the surface of the epitaxial wafer obtained in the step 12, wherein the thickness lambda/2 of the second dielectric refraction layer is made of SiNx, tiO2, taO2, siON and the like, and the refractive index of the material of the second dielectric refraction layer is larger than that of the material of the first dielectric refraction layer, and the second dielectric refraction layer is shown in figure 21;
step 14, coating photoresist on the surface of the epitaxial wafer finished in the step 13, as shown in fig. 22, so that only the central area of the light-emitting window is free from photoresist;
step 15, performing etching treatment on the epitaxial wafer obtained in the step 14, and adopting an ICP dry etching process, wherein etching gas is Cl2/BCl3 or Cl2/SiCl4, or CF4+Ar, so that only the second dielectric refraction layer material in the central area of the light outlet window is etched, see FIG. 23; removing the photoresist after etching is completed to obtain an epitaxial wafer which is only in the central area of the light emergent window and is free of a second-layer dielectric refractive layer material, see FIG. 24; if more medium refraction layers are needed or a metal reflection layer is needed to be arranged on the outermost layer of the inclined plane, repeating the steps 13 to 15 to obtain an epitaxial wafer which is only provided with the light-emitting window in the central area and is free of medium refraction layer materials and metal reflection layer materials;
step 16, coating photoresist on the surface of the epitaxial wafer obtained in the step 15, as shown in fig. 25, so that the photoresist is reserved only in the funnel-shaped space above the central area of the light emitting window, and the rest part is not reserved;
step 17, as shown in fig. 26, etching the epitaxial wafer obtained in step 16, and adopting an ICP dry etching process to etch the dielectric refractive layer material and/or the metal reflective layer material in other areas, wherein the etching gas is Cl2/BCl3 or Cl2/SiCl4, or cf4+ar, etc., and the dielectric refractive layer material and/or the metal reflective layer material in other areas are etched completely, and only the dielectric refractive layer material and/or the metal reflective layer material on the inclined plane of the light extraction layer is reserved; after etching, the photoresist is removed, and a laser with a light reflection structure composed of two dielectric refraction layers on the inclined plane of the light extraction layer is obtained, as shown in fig. 27.
Claims (5)
1. The vertical cavity surface emitting laser comprises a circular light emitting window, and is characterized in that the light emitting window is divided into a circular central area concentric with the light emitting window and with a slightly smaller radius and a peripheral annular area surrounding the circular central area, a light extraction layer is arranged on the upper surface of the peripheral annular area, the light extraction layer consists of a circular ring part with the thickness lambda/4 odd multiple of that of an outer ring and a bevel part with the thickness lambda being the emitting laser wavelength of the vertical cavity surface emitting laser, the thickness of the bevel part is linearly changed to the thickness of the circular ring part along with the horizontal distance from the central axis of the light emitting window from 0, an included angle between the bevel surface of the bevel part and the central axis of the light emitting window is 35-65 degrees, the material refractive index of the light extraction layer is smaller than that of the light emitting window, and the bevel surface of the bevel part is provided with a light reflection structure.
2. The vcl as defined in claim 1, wherein the light-reflecting structure includes a set of dielectric refractive layers disposed on the inclined surface of the inclined surface portion and having a material refractive index greater than that of the light-extracting layer, each of the dielectric refractive layers having a thickness λ/2, the material refractive index of each of the dielectric refractive layers increasing stepwise in a direction away from the light-extracting layer.
3. The vcl as defined in claim 2, wherein the light-reflecting structure further includes a metal reflective layer disposed on an outer surface of the outermost dielectric refractive layer.
4. The vertical cavity surface emitting laser according to claim 1, wherein said light reflecting structure is a metal reflecting layer provided on a slant surface of the slant portion.
5. A vertical cavity surface emitting laser according to claim 3 or 4, wherein said metal reflective layer has a thickness of 10 to 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311208688.8A CN117039617A (en) | 2023-09-19 | 2023-09-19 | Vertical cavity surface emitting laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311208688.8A CN117039617A (en) | 2023-09-19 | 2023-09-19 | Vertical cavity surface emitting laser |
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| CN117039617A true CN117039617A (en) | 2023-11-10 |
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| CN202311208688.8A Pending CN117039617A (en) | 2023-09-19 | 2023-09-19 | Vertical cavity surface emitting laser |
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