CN117031852A - Optical single sideband modulator with randomly adjustable sideband suppression ratio - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses an optical single sideband modulator with any adjustable sideband suppression ratio, which relates to the field of optical communication, wherein an optical waveguide comprises: an input straight waveguide, an MZ structure waveguide, and an output straight waveguide; the MZ structure waveguide comprises a beam splitting waveguide, two parallel waveguides and a beam combining waveguide which are connected in sequence; wherein, the electrode group includes: the device comprises an intensity modulation region radio frequency electrode group, a bias electrode group, an effective optical power adjusting electrode group and a phase modulation region radio frequency electrode group, wherein the intensity modulation region radio frequency electrode group, the bias electrode group and the effective optical power adjusting electrode group are arranged on an MZ structure waveguide; the intensity modulation region radio frequency electrode group and the phase modulation region radio frequency electrode group are used for loading radio frequency microwave signals; the bias electrode group is used for adjusting a bias working point; the effective optical power adjusting electrode group is used for adjusting the optical power of the upper arm and the lower arm of the two-arm parallel waveguide. The optical single sideband modulation signal generated by the invention can realize that the sideband suppression ratio is arbitrarily adjustable within the range of 0 to plus infinity while retaining the carrier.
Description
Technical Field
The invention relates to the field of optical communication, in particular to an optical single sideband modulator with an arbitrarily adjustable sideband suppression ratio.
Background
The optical single sideband modulation signal is widely applied to long-distance optical fiber communication, high-precision optical fiber sensing, high-resolution optical vector network analyzers and the like because the optical single sideband modulation signal is not affected by frequency-related power change caused by chromatic dispersion. The optical single sideband modulation signal generation method is mainly divided into two main types, namely an optical filtering method and a phase shifting method. The optical filtering method can only filter light with specific wavelength, a single device is difficult to meet the application requirements of wide spectrum scenes such as carrier wavelength change, the use of the phase shifting method is not limited by carrier wavelength, and the application range is wider. The modulator structure for generating optical single sideband signal by phase shifting method mainly comprises the following two types:
the first is a double parallel M-Z structure as shown in fig. 1, the modulator of this type can generate a carrier-suppressed single sideband modulation signal, but three optical bias points and microwave phases need to be controlled, the operation is complex, in addition, the carrier-suppressed single sideband modulation signal needs to introduce coherent light beat frequency at the receiving end, the cost is high, wherein, E in Representing the optical signal input to the modulator; e (E) out Representing the optical signal of the output modulator. The second is a dual-drive M-Z structure as shown in fig. 2, and the structure can effectively inhibit first-order or second-order sidebands while retaining carrier waves, but because each group of electrodes only modulates one arm in the M-Z structure, the modulation effect is low, and meanwhile, the random adjustment of the sideband inhibition ratio of 0 to +/-infinity can not be realized due to the microwave modulation depth and phase deviation caused by non-ideal devices such as a hybrid coupler, a cable and the like.
To sum up, the existing optical single sideband modulator cannot achieve arbitrary adjustment of the sideband suppression ratio of 0 to +infinity while retaining the carrier.
Disclosure of Invention
Based on this, the embodiment of the invention provides an optical single sideband modulator with an arbitrarily adjustable sideband suppression ratio, and the generated optical single sideband modulation signal can realize that the sideband suppression ratio is arbitrarily adjustable within the range of 0 to plus infinity while retaining a carrier.
In order to achieve the above object, the embodiment of the present invention provides the following solutions:
an optical single sideband modulator with an arbitrarily adjustable sideband suppression ratio comprising: an electrode group and an optical waveguide;
the electrode group includes: the device comprises an intensity modulation region radio frequency electrode group, a bias electrode group, an effective optical power adjusting electrode group and a phase modulation region radio frequency electrode group;
the optical waveguide includes: an input straight waveguide, an MZ structure waveguide, and an output straight waveguide; the MZ structure waveguide comprises a beam splitting waveguide, two-arm parallel waveguides and a beam combining waveguide; the input straight waveguide, the beam splitting waveguide, the two-arm parallel waveguide, the beam combining waveguide and the output straight waveguide are sequentially connected;
the intensity modulation region radio frequency electrode group, the bias electrode group and the effective optical power adjusting electrode group are all arranged on the MZ structure waveguide; the phase modulation region radio frequency electrode group is arranged on the target straight waveguide; the target straight waveguide is the input straight waveguide or the output straight waveguide;
the intensity modulation region radio frequency electrode group and the phase modulation region radio frequency electrode group are both used for loading radio frequency microwave signals; the bias electrode group is used for adjusting a bias working point; the effective optical power adjusting electrode group is used for adjusting the optical power of the upper arm and the lower arm of the two-arm parallel waveguide.
Optionally, the beam splitting waveguide includes: a first branch waveguide and a second branch waveguide; the two-arm parallel waveguide includes: an upper arm waveguide and a lower arm waveguide; the beam combining waveguide includes: a third branch waveguide and a fourth branch waveguide;
one end of the first branch waveguide is connected with one end of the second branch waveguide to form a first connection point; the input straight waveguide is connected with the first connecting point; the other end of the first branch waveguide, the upper arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide, the lower arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide is connected with the other end of the second branch waveguide to form a second connection point; the output straight waveguide is connected with the second connecting point.
Optionally, the intensity modulation region radio frequency electrode group and the bias electrode group are sequentially arranged from the input end to the output end of the two-arm parallel waveguide;
the intensity modulation region radio frequency electrode group comprises: three parallel first rf electrodes; a first radio frequency electrode is arranged between the upper arm waveguide and the lower arm waveguide; the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a first radio frequency electrode;
the bias electrode group includes: three parallel bias electrodes; a bias electrode is arranged between the upper arm waveguide and the lower arm waveguide; and the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a bias electrode.
Optionally, the effective optical power adjustment electrode group is disposed on the beam combining waveguide;
the effective optical power adjustment electrode group includes: four adjusting electrodes; the third branch waveguide is positioned between two of the adjusting electrodes; the fourth branch waveguide is located between the other two adjusting electrodes.
Optionally, the effective optical power adjustment electrode group is disposed on the beam splitting waveguide; a cross coupling effect is provided between the first branch waveguide and the second branch waveguide;
the effective optical power adjustment electrode group includes: three adjusting electrodes; an adjusting electrode is arranged between the first branch waveguide and the second branch waveguide; and the outer sides of the first branch waveguide and the second branch waveguide are respectively provided with an adjusting electrode.
Optionally, the optical single sideband modulator further comprises: a sub-parallel waveguide and a coupler;
the sub-parallel waveguide includes: a first parallel waveguide and a second parallel waveguide;
the first branch waveguide, the first parallel waveguide, the coupler and the upper arm waveguide are sequentially connected; the second branch waveguide, the second parallel waveguide, the coupler and the lower arm waveguide are sequentially connected;
the effective optical power adjustment electrode group includes: four parallel adjustment electrodes; the first parallel waveguide is positioned between two of the adjusting electrodes; the second parallel waveguide is located between the other two adjusting electrodes.
Optionally, the effective optical power adjusting electrode group is arranged on the two-arm parallel waveguide;
the intensity modulation region radio frequency electrode group, the bias electrode group and the effective optical power adjusting electrode group are sequentially arranged from the input end to the output end of the two-arm parallel waveguide;
the effective optical power adjustment electrode group includes: three adjusting electrodes; an adjusting electrode is arranged between the upper arm waveguide and the lower arm waveguide; and an adjusting electrode is arranged on the outer side between the upper arm waveguide and the lower arm waveguide.
Optionally, the phase modulation region radio frequency electrode group includes: three parallel second rf electrodes; the target straight waveguide is positioned between two of the second radio frequency electrodes.
Optionally, the optical single sideband modulator further comprises: a chip substrate; the electrode group and the optical waveguide are both disposed on the chip substrate.
Optionally, the coupler is a 3dB coupler.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the embodiment of the invention provides an optical single sideband modulator with an optionally adjustable sideband suppression ratio, an intensity modulation area radio frequency electrode group, a bias electrode group and an effective optical power adjusting electrode group are arranged on an MZ structure waveguide, a phase modulation area radio frequency electrode group is arranged on an input straight waveguide or an output straight waveguide, the intensity modulation area radio frequency electrode group and the phase modulation area radio frequency electrode group are both used for loading radio frequency microwave signals, the bias electrode group is used for adjusting bias working points, the effective optical power adjusting electrode group is used for adjusting the optical power of an upper arm and a lower arm of a two-arm parallel waveguide, thus the radio frequency microwave signals are divided into two paths, one path is input by the intensity modulation area radio frequency electrode group, the other path is input by the phase modulation area radio frequency electrode group, the optical phase difference (namely the bias working points) of the upper arm and the lower arm of the intensity modulation area is adjusted through the bias electrode group, and the optical power of the upper arm and the lower arm is adjusted through the effective optical power adjusting electrode group, the ratio of power of a power value of an + -1-order sideband of the output optical signal of a sideband device can cover a range of 0 to an infinite range, and the sideband suppression ratio of the generated optical single sideband modulation signal can cover the sideband suppression ratio of 0 to an infinite carrier rejection ratio, and the carrier rejection ratio can be realized at the same time.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a double parallel M-Z structure;
FIG. 2 is a schematic diagram of a dual-drive M-Z structure;
FIG. 3 is a schematic diagram of one configuration of an optical single sideband modulator with any tunable sideband suppression ratio provided by the present invention;
FIG. 4 is a schematic diagram of yet another configuration of a sideband suppression ratio of any tunable optical single sideband modulator provided by the present invention;
FIG. 5 is a schematic view of a first form of an active optical power conditioning electrode set according to the present invention;
FIG. 6 is a schematic view of a second form of an active optical power conditioning electrode set provided by the present invention;
fig. 7 is a schematic view of a third form of the active optical power adjustment electrode set provided by the present invention.
Symbol description:
the device comprises an intensity modulation area radio frequency electrode group-1, a bias electrode group-2, an effective optical power adjusting electrode group-3, a phase modulation area radio frequency electrode group-4, an input straight waveguide-5, an output straight waveguide-6, a beam splitting waveguide-7, two-arm parallel waveguides-8, a beam combining waveguide-9, a chip substrate-10, a secondary parallel waveguide-11 and a coupler-12.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
First, the principle of an optical single sideband modulator will be described.
Without RF signal and bias input, the optical signal of the output modulator can be expressed as
Wherein E is out In order to output the optical signal of the modulator,to output the amplitude, omega, of the optical signal of the modulator o Is the angular frequency of the optical signal of the output modulator, t represents time, and i represents imaginary units.
When the RF signal is input into the phase modulation region and the intensity modulation region, the output signal can be expressed as
Wherein, alpha is determined by the effective optical power of two arms of the intensity modulation region and is used for representing the effective optical size of the two arms to be modulated; beta 1 、2β 2 The modulation depth of the phase modulation area and the intensity modulation area is determined by half-wave voltage; omega e Angular frequency for input radio frequency signal; θ is the phase difference of the light paths of the upper arm and the lower arm caused by the bias electrode of the intensity modulation area;inputting radio frequency signals for intensity modulatorsThe number is phase shifted relative to the phase modulator.
To facilitate the expansion of the Bessel functions of the first class, E out The unfolding is as follows:
and then E is arranged out The simplification is as follows:
the above-mentioned functions are developed by using the Bessel functions of the first type, and the method is simplified to obtain:
wherein J m (x) As the first type of bessel function, when m is an integer, it is called the m-order progression of the first type of bessel function.
At this time, the + -1-order sidebands of the device output optical signal can be written out:
the power value of the + -1-order sidebands of the device output optical signal may be expressed as:
the sideband suppression ratio S is the absolute value of the + -1-order sideband ratio: s=10|log (P -1 /P +1 )。
In order to make the sideband suppression ratio S cover the range of 0 to +infinity, it is necessary to ensure P -1 And P +1 The values can be respectively 0, namely:
1)and, in addition, the method comprises the steps of,time, -1 st order sideband P -1 Can be adjusted to 0.
2)And, in addition, the method comprises the steps of,at the time of +1 order sideband P +1 Can be adjusted to 0.
In engineering applications, however, there are often two problems: 1. the 90-degree microwave hybrid coupler, the cable and other devices are not ideal, so that the phase difference of the input radio-frequency signal of the intensity modulator relative to the phase modulator is causedNot ideal ± 90 °; 2. meanwhile, due to chip processing process errors, half-wave voltage of a radio frequency end is not ideal, and modulation depth beta is further caused 1 、β 2 Are not equal.
Both of the above problems result in a power value P for the-1 order sideband -1 Power value P with +1 order sideband +1 The value cannot be 0, and at this time, the complete suppression of the +1-order side band or the-1-order side band cannot be realized, and further, the arbitrary adjustment of the side band suppression ratio S in the range of 0 to +infinity cannot be realized.
But can be adapted to any one if the effective optical power alpha and the optical phase difference theta of the upper arm and the lower arm of the characterization intensity modulation region can be adjusted at the same timeAnd beta 1 、β 2 In order to realize P -1 And P +1 I.e. any adjustment of the sideband suppression ratio S.
Therefore, the sideband suppression ratio of the optical single sideband modulator with any adjustable device structure needs to comprise the following four parts: 1. the phase modulation area is matched with the radio frequency electrode for high-speed phase modulation; 2. the intensity modulation area is provided with a waveguide with an MZ structure and a radio frequency electrode with a push-pull structure for high-speed intensity modulation; 3. the bias electrode area is positioned on the MZ structure and is used for loading direct-current voltage to change the phase difference of the upper arm and the lower arm of the MZ structure, namely a bias working point; 4. and the effective optical power adjusting area is positioned on the MZ structure and is used for loading direct-current voltage to change the effective optical power of the upper arm and the lower arm of the MZ structure.
The sideband suppression of this embodiment is described in more detail below with respect to any tunable optical single sideband modulator.
Referring to fig. 3, the sideband suppression ratio of the present embodiment is any tunable optical single sideband modulator comprising: an electrode group and an optical waveguide.
The electrode group includes: the device comprises an intensity modulation region radio frequency electrode group 1, a bias electrode group 2, an effective optical power adjusting electrode group 3 and a phase modulation region radio frequency electrode group 4.
The optical waveguide includes: an input straight waveguide 5, an MZ structure waveguide, and an output straight waveguide 6; the MZ structure waveguide comprises a beam splitting waveguide 7, two-arm parallel waveguides 8 and a beam combining waveguide 9; the input straight waveguide 5, the beam splitting waveguide 7, the two-arm parallel waveguide 8, the beam combining waveguide 9 and the output straight waveguide 6 are sequentially connected.
The intensity modulation region radio frequency electrode group 1, the bias electrode group 2 and the effective optical power adjusting electrode group 3 are all arranged on the MZ structure waveguide; the phase modulation region radio frequency electrode group 4 is arranged on the target straight waveguide; the target straight waveguide is the input straight waveguide 5 or the output straight waveguide 6.
The intensity modulation region radio frequency electrode group 1 and the phase modulation region radio frequency electrode group 4 are used for loading radio frequency microwave signals; the bias electrode group 2 is used for adjusting a bias working point; the effective optical power adjusting electrode group 3 is used for adjusting the optical power of the upper arm and the lower arm of the two-arm parallel waveguide 8.
When the device is used, an external radio frequency circuit divides a microwave signal into two paths by using a 90-degree hybrid coupler, one path is input into an intensity modulation region radio frequency electrode group 1, the other path is input into a phase modulation region radio frequency electrode group 4, at the moment, bias working points (namely phase difference theta) of upper and lower arms of the intensity modulation region are adjusted by a bias electrode group 2, and the optical power alpha of the upper and lower arms is adjusted by an effective optical power adjusting electrode group 3, so that P can be realized -1 And P +1 Covering the range of 0 to plus infinity, and further enabling the sideband suppression ratio S to cover 0 to plus infinity, namely, the sideband suppression ratio to be arbitrarily adjustable.
In one example, still referring to fig. 3, the beam splitting waveguide 7 includes: a first branch waveguide and a second branch waveguide; the two-arm parallel waveguide 8 includes: an upper arm waveguide and a lower arm waveguide; the beam combining waveguide 9 includes: a third branch waveguide and a fourth branch waveguide.
One end of the first branch waveguide is connected with one end of the second branch waveguide to form a first connection point; the input straight waveguide 5 is connected with the first connecting point; the other end of the first branch waveguide, the upper arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide, the lower arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide is connected with the other end of the second branch waveguide to form a second connection point; the output straight waveguide 6 is connected to the second connection point.
In one example, the phase modulation region rf electrode set 4 includes: three parallel second rf electrodes; the target straight waveguide is positioned between two of the second radio frequency electrodes. Referring to fig. 3, the output straight waveguide 6 is located between two of the second radio frequency electrodes; referring to fig. 4, the input straight waveguide 5 is located between two of the second radio frequency electrodes. The above functions are also achieved in fig. 4 compared to fig. 3, in which the phase modulation region rf electrode set 4 is moved to the intensity modulation rf electrode set.
In one example, still referring to fig. 3, the rf electrode set 1 and the bias electrode set 2 are disposed sequentially from the input end to the output end of the two-arm parallel waveguide 8.
The intensity modulation region radio frequency electrode group 1 comprises: three parallel first rf electrodes; a first radio frequency electrode is arranged between the upper arm waveguide and the lower arm waveguide; and the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a first radio frequency electrode.
The bias electrode group 2 includes: three parallel bias electrodes; a bias electrode is arranged between the upper arm waveguide and the lower arm waveguide; and the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a bias electrode.
In one example, still referring to fig. 3, the active optical power adjustment electrode set 3 is disposed on the beam combining waveguide 9. The active optical power adjustment electrode group 3 includes: four adjusting electrodes; the third branch waveguide is positioned between two of the adjusting electrodes; the fourth branch waveguide is located between the other two adjusting electrodes.
In one example, referring to fig. 5, the active optical power adjustment electrode group 3 is disposed on the beam splitting waveguide 7; a cross coupling effect is provided between the first branch waveguide and the second branch waveguide;
the active optical power adjustment electrode group 3 includes: three adjusting electrodes; an adjusting electrode is arranged between the first branch waveguide and the second branch waveguide; and the outer sides of the first branch waveguide and the second branch waveguide are respectively provided with an adjusting electrode.
In this example, the effective optical power adjusting electrode set 3 and the optical waveguide corresponding thereto are an effective optical power adjusting structure adopting an adjustable Y branch, and the effective optical power adjusting electrode is used to adjust the split ratio of two arms when the relatively obvious cross coupling effect exists in the area where the split waveguide 7 of the MZ structure is located in the actual design of the structure and the distance between the upper and lower arm waveguides is relatively close, thereby realizing the adjustment of the effective optical power.
In one example, referring to fig. 6, the optical single sideband modulator further comprises: a sub parallel waveguide 11 and a coupler 12. The sub parallel waveguide 11 includes: a first parallel waveguide and a second parallel waveguide; the first branch waveguide, the first parallel waveguide, the coupler 12, and the upper arm waveguide are sequentially connected; the second branch waveguide, the second parallel waveguide, the coupler 12, and the lower arm waveguide are sequentially connected. The coupler 12 may be a 3dB coupler.
The active optical power adjustment electrode group 3 includes: four parallel adjustment electrodes; the first parallel waveguide is positioned between two of the adjusting electrodes; the second parallel waveguide is located between the other two adjusting electrodes.
In this example, the effective optical power adjusting electrode set 3 and the optical waveguide corresponding thereto are an effective optical power adjusting structure using a directional coupler, and in the practical design of the structure, the structure is located after the beam splitting waveguide 7 of the MZ structure and before the parallel waveguides 8 (i.e. the main parallel waveguides), the structure is composed of a Y-branch, a sub parallel waveguide 11 and a coupler 12, and a group of effective optical power adjusting electrode sets 3 are attached to the sub parallel waveguide 11 to adjust the optical phase difference in the two arms, and because the optical phases in the sub parallel waveguides 11 are different, the optical power is redistributed at the coupler 12, thereby realizing the adjustment of the effective optical power entering the main parallel waveguide.
In one example, referring to fig. 7, the active optical power adjustment electrode group 3 is disposed on the two-arm parallel waveguide 8; the intensity modulation region radio frequency electrode group 1, the bias electrode group 2 and the effective optical power adjusting electrode group 3 are sequentially arranged from the input end to the output end of the two-arm parallel waveguide 8.
The active optical power adjustment electrode group 3 includes: three adjusting electrodes; an adjusting electrode is arranged between the upper arm waveguide and the lower arm waveguide; and an adjusting electrode is arranged on the outer side between the upper arm waveguide and the lower arm waveguide.
In this example, the effective optical power adjusting electrode group 3 and the optical waveguide corresponding thereto are an effective optical power adjusting structure adopting transmission loss adjustment and control, and the structure is located at the parallel waveguide or the beam combining waveguide 9 of the MZ structure in practical design, and mainly aims at the optical waveguide prepared by proton exchange or titanium diffusion technology, the distance between the electrode and the waveguide is smaller in design, the refractive index distribution of the waveguide is changed by direct current voltage, and then the mode field of the optical waveguide is changed, and when the mode field is large enough, the optical field distribution coincides with the metal electrode, so that absorption of metal to light is generated, namely, the effective optical power of the parallel waveguide is adjusted. The corresponding electrode adopts a push-pull structure, and when the power is applied to enable one arm waveguide to have increased loss due to the smaller refractive index, the loss of the other arm waveguide is almost unchanged due to the increased refractive index.
In one example, still referring to fig. 3, the optical single sideband modulator further comprises: a chip substrate 10; the electrode group and the optical waveguide are both disposed on the chip substrate 10. The material of the chip substrate 10 may be X-cut lithium niobate or X-cut LNOI.
The sideband suppression ratio of the embodiment of the invention is more than any adjustable optical single sideband modulator, and the modulator has only one group of bias electrodes, compared with 3 groups of bias electrodes of the IQ modulator shown in figure 1, the structure is simple, and the operation is simple; the modulator can retain optical carrier waves when in single-sideband modulation, has low use cost, and meanwhile, the electrode is of a push-pull structure, so that the modulation efficiency is high; the method can also adapt to the microwave modulation depth and the phase deviation to realize the random adjustment of the sideband suppression ratio of 0 to plus infinity.
The modulator consists of a phase modulation area and an intensity modulation area, wherein the phase modulation area waveguide is of a straight waveguide structure, the intensity modulation area waveguide is of an M-Z structure, the phase modulation area is provided with one group of electrodes for loading radio frequency signals, the intensity modulation area is provided with three groups of electrodes, one group of electrodes is used for loading radio frequency microwave signals, the second group of electrodes is used for changing bias working points of the electrodes, the third group of electrodes is used for adjusting the optical power of the upper arm and the lower arm, the radio frequency signals are loaded on the radio frequency electrodes of the phase modulation area and the intensity modulation area through a 90-DEG microwave hybrid coupler under the structure, and then specific voltages are loaded on the two groups of electrodes behind the intensity modulation area, so that the random adjustment of the sideband suppression ratio of the output optical signals can be realized.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the above examples being provided only to assist in understanding the modulator and core ideas of the present invention; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (10)
1. An optical single sideband modulator with an arbitrarily adjustable sideband suppression ratio, comprising: an electrode group and an optical waveguide;
the electrode group includes: the device comprises an intensity modulation region radio frequency electrode group, a bias electrode group, an effective optical power adjusting electrode group and a phase modulation region radio frequency electrode group;
the optical waveguide includes: an input straight waveguide, an MZ structure waveguide, and an output straight waveguide; the MZ structure waveguide comprises a beam splitting waveguide, two-arm parallel waveguides and a beam combining waveguide; the input straight waveguide, the beam splitting waveguide, the two-arm parallel waveguide, the beam combining waveguide and the output straight waveguide are sequentially connected;
the intensity modulation region radio frequency electrode group, the bias electrode group and the effective optical power adjusting electrode group are all arranged on the MZ structure waveguide; the phase modulation region radio frequency electrode group is arranged on the target straight waveguide; the target straight waveguide is the input straight waveguide or the output straight waveguide;
the intensity modulation region radio frequency electrode group and the phase modulation region radio frequency electrode group are both used for loading radio frequency microwave signals; the bias electrode group is used for adjusting a bias working point; the effective optical power adjusting electrode group is used for adjusting the optical power of the upper arm and the lower arm of the two-arm parallel waveguide.
2. The optical single sideband modulator of claim 1, wherein the beam splitting waveguide comprises: a first branch waveguide and a second branch waveguide; the two-arm parallel waveguide includes: an upper arm waveguide and a lower arm waveguide; the beam combining waveguide includes: a third branch waveguide and a fourth branch waveguide;
one end of the first branch waveguide is connected with one end of the second branch waveguide to form a first connection point; the input straight waveguide is connected with the first connecting point; the other end of the first branch waveguide, the upper arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide, the lower arm waveguide and one end of the second branch waveguide are sequentially connected; the other end of the second branch waveguide is connected with the other end of the second branch waveguide to form a second connection point; the output straight waveguide is connected with the second connecting point.
3. The optical single sideband modulator of claim 2, wherein the set of intensity modulation zone radio frequency electrodes and the set of bias electrodes are disposed in sequence from the input end to the output end of the two-arm parallel waveguide;
the intensity modulation region radio frequency electrode group comprises: three parallel first rf electrodes; a first radio frequency electrode is arranged between the upper arm waveguide and the lower arm waveguide; the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a first radio frequency electrode;
the bias electrode group includes: three parallel bias electrodes; a bias electrode is arranged between the upper arm waveguide and the lower arm waveguide; and the outer sides of the upper arm waveguide and the lower arm waveguide are respectively provided with a bias electrode.
4. The optical single sideband modulator of claim 2, wherein the active optical power conditioning electrode set is disposed on the combined waveguide;
the effective optical power adjustment electrode group includes: four adjusting electrodes; the third branch waveguide is positioned between two of the adjusting electrodes; the fourth branch waveguide is located between the other two adjusting electrodes.
5. The optical single sideband modulator of claim 2, wherein the active optical power conditioning electrode set is disposed on the beam splitting waveguide; a cross coupling effect is provided between the first branch waveguide and the second branch waveguide;
the effective optical power adjustment electrode group includes: three adjusting electrodes; an adjusting electrode is arranged between the first branch waveguide and the second branch waveguide; and the outer sides of the first branch waveguide and the second branch waveguide are respectively provided with an adjusting electrode.
6. The optical single sideband modulator of claim 1, further comprising: a sub-parallel waveguide and a coupler;
the sub-parallel waveguide includes: a first parallel waveguide and a second parallel waveguide;
the first branch waveguide, the first parallel waveguide, the coupler and the upper arm waveguide are sequentially connected; the second branch waveguide, the second parallel waveguide, the coupler and the lower arm waveguide are sequentially connected;
the effective optical power adjustment electrode group includes: four parallel adjustment electrodes; the first parallel waveguide is positioned between two of the adjusting electrodes; the second parallel waveguide is located between the other two adjusting electrodes.
7. A sideband suppression ratio arbitrarily adjustable optical single sideband modulator of claim 2, wherein the active optical power conditioning electrode set is disposed on the two arm parallel waveguides;
the intensity modulation region radio frequency electrode group, the bias electrode group and the effective optical power adjusting electrode group are sequentially arranged from the input end to the output end of the two-arm parallel waveguide;
the effective optical power adjustment electrode group includes: three adjusting electrodes; an adjusting electrode is arranged between the upper arm waveguide and the lower arm waveguide; and an adjusting electrode is arranged on the outer side between the upper arm waveguide and the lower arm waveguide.
8. The optical single sideband modulator of claim 1, wherein the phase modulation zone radio frequency electrode set comprises: three parallel second rf electrodes; the target straight waveguide is positioned between two of the second radio frequency electrodes.
9. The optical single sideband modulator of claim 1, further comprising: a chip substrate;
the electrode group and the optical waveguide are both disposed on the chip substrate.
10. The optical single sideband modulator of claim 6, wherein the coupler is a 3dB coupler.
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| CN202311035855.3A CN117031852A (en) | 2023-08-17 | 2023-08-17 | Optical single sideband modulator with randomly adjustable sideband suppression ratio |
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