CN117026182A - Magnetron sputtering coating process - Google Patents
Magnetron sputtering coating process Download PDFInfo
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- CN117026182A CN117026182A CN202310868593.2A CN202310868593A CN117026182A CN 117026182 A CN117026182 A CN 117026182A CN 202310868593 A CN202310868593 A CN 202310868593A CN 117026182 A CN117026182 A CN 117026182A
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- 238000000576 coating method Methods 0.000 title claims abstract description 220
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 174
- 238000000034 method Methods 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000005315 distribution function Methods 0.000 claims description 58
- 238000007747 plating Methods 0.000 claims description 41
- 239000007888 film coating Substances 0.000 claims description 39
- 238000009501 film coating Methods 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 38
- 230000008021 deposition Effects 0.000 claims description 38
- 238000009826 distribution Methods 0.000 claims description 16
- 238000012804 iterative process Methods 0.000 claims description 11
- 230000006872 improvement Effects 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 238000012876 topography Methods 0.000 claims description 6
- 230000009191 jumping Effects 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The invention discloses a magnetron sputtering coating process, which comprises the following steps: and (3) coating the surface of the workpiece by using a coating machine, reducing the aperture of an outlet of the coating machine before coating is completed, and carrying out deterministic coating on the surface of the workpiece by using the coating machine according to the time to be coated corresponding to different areas of the surface of the workpiece after the previous coating until the requirement is met. The process can realize high-precision coating of the thickness of the film layer on the surface of the workpiece, can realize high-precision coating of the plane flatness of the film layer, has the advantages of simple process, low cost, easy realization, high coating efficiency and the like, can overcome the defects of low film thickness uniformity or surface flatness precision and the like of the traditional magnetic control coating equipment and process, and is also beneficial to promoting the mass production of high-precision semiconductor devices and improving the surface quality; the process has excellent coating effect on substrates and film layers made of different materials, high-efficiency and high-precision coating capability, high use value and good application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductor coating, and relates to a magnetron sputtering coating process.
Background
The semiconductor coating process is a key technology for manufacturing a semiconductor device, and is to deposit a layer of film with specific patterns and specific materials on the surface of a semiconductor to form a required circuit pattern, so as to finally realize the control of electronic equipment. The semiconductor coating mainly comprises Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD) and the like, wherein the physical vapor deposition is used for carrying out film deposition on the surface of a workpiece in a physical sputtering mode and the like, so that the quality and uniformity of the surface coating are greatly influenced by technological parameters such as temperature, pressure and the like. Particularly, it is noted that the uniform scanning coating equipment is difficult to avoid the inherent deviation of the local area in actual production, and as the number of coating times increases, local small errors gradually accumulate to form local large errors, but the conventional uniform scanning coating equipment and process are difficult to realize accurate coating on the local part of the workpiece, so that calibration cannot be performed after coating. Therefore, the method has important significance in realizing film deposition by using PVD equipment such as scanning magnetron and the like and how to obtain a high-precision magnetron sputtering coating process.
Disclosure of Invention
The invention aims to solve the technical problems of the prior art and provides a magnetron sputtering coating process which has the advantages of simple process, low cost, easy realization, high coating efficiency and high precision.
In order to solve the technical problems, the invention adopts the following technical scheme.
A magnetron sputtering coating process comprises the following steps:
s1, coating a film on the surface of a workpiece by using a film coating machine;
s2, stopping coating before coating, reducing the outlet aperture of the coating machine, and carrying out deterministic coating on the surface of the workpiece by using the coating machine with the outlet aperture reduced according to time distribution functions T (x, y) of different areas on the surface of the workpiece; the time distribution function T (x, y) comprises the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating;
s3, measuring the film morphology of the surface of the workpiece after deterministic film plating, if the film morphology does not meet the requirement, jumping to the S2 for performing an iterative process, otherwise ending the film plating process; if the iterative process of S2 can not meet the requirements, further reducing the outlet aperture of the coating machine, continuing deterministic coating and corresponding iterative processes until the requirements are met, and ending the coating process.
In a further improvement of the above magnetron sputtering coating process, in S2, before each deterministic coating, the method further includes: acquiring time distribution functions T (x, y) of different areas on the surface of the workpiece; the method for acquiring the time distribution function T (x, y) of different areas of the surface of the workpiece comprises the following steps:
(1) Measuring the morphology of the film layer on the surface of the workpiece after the previous film coating, and obtaining a morphology distribution function U (x, y) of the film layer on the surface of the workpiece after the previous film coating;
(2) According to the shape distribution function U (x, y) of the surface film layer of the workpiece after the previous film plating, obtaining a distribution function V (x, y) of the thickness of the surface film to be plated of the workpiece after the previous film plating;
(3) And obtaining the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating according to the deposition function A (x, y) of the coating machine after the outlet aperture is reduced and the distribution function V (x, y) of the thickness to be coated on the surface of the workpiece after the previous coating, and obtaining the time distribution function T (x, y) of the different areas on the surface of the workpiece.
In the above-mentioned magnetron sputtering coating process, further improved, in the step (1), the topography distribution function U (x, y) of the workpiece surface film layer after the previous coating includes a film thickness distribution function U 1 (x, y) or surface topography distribution function U 2 (x, y); the film thickness distribution function U 1 (x, y) comprises film thicknesses corresponding to different areas on the surface of the workpiece after the previous film coating; the surface topography distribution function U 2 And (x, y) comprises the film layer relief morphology corresponding to different areas of the surface of the workpiece after the previous film coating.
In the above-mentioned magnetron sputtering coating process, in the step (2), the distribution function V (x, y) of the thickness of the surface of the workpiece to be coated after the previous coating includes the thicknesses of the corresponding surfaces of the workpiece to be coated in different areas after the previous coating; the distribution function V (x, y) of the thickness of the to-be-coated film on the surface of the workpiece after the previous film coating is obtained by the following method: and respectively calculating the thicknesses to be coated of other areas of the surface of the film layer by taking the highest point of the film layer on the surface of the workpiece after the previous film coating as a reference, so as to obtain the thicknesses to be coated corresponding to the different areas of the surface of the workpiece, and obtaining the distribution function V (x, y) of the thicknesses to be coated of the surface of the workpiece after the previous film coating.
In the above-mentioned magnetron sputtering coating process, further improved, in the step (3), the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating is determined by a two-dimensional convolution calculation formula; the two-dimensional convolution calculation formula is as follows:
V(x,y)＝T(x,y)**A(x,y) (1)，
in the formula (1), V (x, y) is a distribution function of the film thickness to be coated on the surface film layer of the workpiece after the previous film coating, A (x, y) is a deposition function of a corresponding outlet aperture film coating machine, and (x, y) is the coordinates of any point on the surface of the film layer.
The magnetron sputtering coating process is further improved, wherein the deposition function A (x, y) of the coating machine after the outlet aperture is reduced comprises the corresponding deposition rate of the coating machine, and the outlet aperture and the process parameters which are matched with the determined deposition rate; the expression of the deposition function A (x, y) of the coating machine after the outlet aperture is reduced is as follows:
in the formula (2), k is a constant related to a workpiece, a coating material and related process parameters, u (x, y) is a profile distribution obtained by performing point-to-point subtraction on profile data of corresponding regions before and after coating, s is a coating region, and T is coating time.
In the above-mentioned magnetron sputtering coating process, further improved, in the step (3), the method for obtaining the deposition function a (x, y) of the coating machine after the outlet aperture is reduced includes the following steps:
(a) Measuring the appearance of a film layer on the surface of a workpiece after the previous film coating, and determining the exit aperture of a film coating machine;
(b) Performing fixed-point coating on the surface of the substrate by using a coating machine with the aperture reduced at an outlet, and obtaining the shape data of fixed-point coating areas on the surface of the substrate before and after coating;
(c) Performing point-to-point subtraction on the morphology data corresponding to the fixed-point coating areas on the surfaces of the substrates before and after coating to obtain the thickness and shape distribution of the film layer of the fixed-point coating area on the surfaces of the substrates in unit time;
(d) And (3) repeating the steps (b) to (c), optimizing the process parameters of the coating machine until the film thickness and shape distribution of the fixed-point coating area on the surface of the substrate in unit time reach a stable state, obtaining the deposition rate of the coating machine corresponding to the fixed-point coating area on the surface of the substrate and the process parameters matched with the process parameters when the deposition rate is determined, and obtaining the deposition function A (x, y) of the coating machine after the outlet aperture is reduced.
In the above-mentioned magnetron sputtering coating process, further improved, in the step (a), the outlet aperture of the coating machine is smaller than the width of the smallest concave area on the surface of the film layer after the previous coating; the aperture of the outlet of the coating machine is adjusted by adopting a magnetic field isolation plate; and through holes with different apertures are formed in the magnetic field isolation plate.
In the above magnetron sputtering coating process, further improved, in the step (b), the shape and material of the substrate are the same as those of the workpiece;
in the above-mentioned magnetron sputtering coating process, in the (d), in the optimization process of the process parameters of the coating process, when the deviation between the measured value of the thickness of the film layer and the average value of the thickness of the film layer is ±1%, the corresponding thickness of the film layer reaches a stable state, and when the measured value of the flatness of the film layer is less than 0.03 standard wavelength, the corresponding shape distribution reaches a stable state, and the standard wavelength is 632.8nm; the process parameters include at least one of pressure, process gas, temperature, power.
The magnetron sputtering coating process is further improved, and the thickness of the single coating on the surface of the workpiece is less than or equal to 95% of the thickness of the residual coating on the surface of the workpiece.
According to the magnetron sputtering coating process, the thickness of the single coating on the surface of the workpiece is 90% -95% of the thickness of the residual coating on the surface of the workpiece.
According to the magnetron sputtering coating process, further improved, in the deterministic coating process, the process parameters and the working environment adopted by the coating machine are consistent with the corresponding process parameters and the working environment when the deposition function A (x, y) of the coating machine is determined.
According to the magnetron sputtering coating process, if the iteration process of the step S2 cannot meet the requirement, the corresponding judgment basis is that the precision improvement change rate f of two adjacent processes is less than 10%; the precision improvement change rate f of the two adjacent processes is calculated by the formula (3):
compared with the prior art, the invention has the advantages that:
aiming at the defects of low film thickness uniformity or surface flatness precision and the like of the existing magnetic control film plating equipment and process, and the defects of extremely limited mass production and surface quality improvement of high-precision semiconductor devices and the like caused by the defects, the invention creatively provides a magnetic control sputtering film plating process, which reduces the outlet aperture of a film plating machine before film plating is completed, and performs deterministic film plating on the surface of a workpiece by utilizing a film plating machine with reduced outlet aperture according to the time distribution function T (x, y) of different areas of the surface of the workpiece, particularly performs film plating treatment on the surface of the workpiece by utilizing the existing equipment under the condition of determining the deposition rate, thereby not only realizing high-precision film plating of the film thickness of the surface of the workpiece, but also realizing high-precision film plating of the film flatness, and the like.
Drawings
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Fig. 1 is a schematic structural diagram of a coating apparatus used in an embodiment of the present invention.
Fig. 2 is a schematic structural view of a magnetic field isolation plate used in an embodiment of the present invention.
FIG. 3 is a schematic flow chart of a magnetron sputtering coating process in an embodiment of the invention.
Detailed Description
The invention is further described below in connection with the drawings and the specific preferred embodiments, but the scope of protection of the invention is not limited thereby.
The materials and instruments used in the examples below are all commercially available.
The existing magnetron sputtering coating equipment and process have the defects of low film thickness uniformity, low flatness precision and the like, and the defects of large-scale production of high-precision semiconductor devices, extremely limited improvement of surface quality and the like caused by the defects. Aiming at the defects, the invention provides a coating process which is simple in process and can effectively improve the coating precision, the process is not only suitable for improving the precision of the uniformity of the film thickness of various materials, but also can be used for improving the precision of the surface evenness of a film layer, and the high-efficiency and high-precision coating effect can be realized by combining an initial rapid scanning coating process and a small-aperture deterministic coating process and adopting proper process steps and processing removal functions.
In order to better understand the innovation of the technical scheme of the invention, as one of cases in the technical scheme of the invention, the magnetron sputtering coating device shown in fig. 1 is adopted for coating, a magnetic field isolation plate for regulating and controlling the outlet aperture of the coating machine in the coating process is shown in fig. 2, and the precise regulation of the outlet aperture of the coating machine is realized by regulating the aperture of a through hole arranged on the magnetic field isolation plate.
When the magnetron sputtering coating is performed by adopting the device shown in fig. 1, the coating precision of the scanning magnetron equipment depends on the distribution of magnetic fields, and the strength uniformity is difficult to realize in a large-size range based on the distribution condition of magnetic field lines, so that the coating precision is limited to a certain extent, and the requirement of high precision is difficult to realize. In view of the above drawbacks, when performing magnetron sputtering coating by using the apparatus shown in fig. 1 and 2, the corresponding magnetron sputtering coating process, as shown in fig. 3, includes the following steps:
s1, coating a film on the surface of a workpiece by using a film coating machine (a conventional film coating device) shown in FIG. 1, wherein the film coating machine specifically comprises the following steps: and (3) performing quick film coating by using the existing scanning magnetic control equipment.
S2, stopping coating when the coating is completed by 95% of the target film thickness, adjusting and reducing the outlet aperture of the coating machine by using the magnetic field isolation plate shown in FIG. 2, and carrying out deterministic coating on the surface of the workpiece by using the coating machine after reducing the outlet aperture according to the time distribution function T (x, y) of different areas of the surface of the workpiece, wherein the time distribution function T (x, y) comprises the time to be coated corresponding to the different areas of the surface of the workpiece after the previous coating.
In step S2 of the present embodiment, the specific operation of deterministic coating is: according to the time distribution function T (x, y) of different areas of the workpiece surface, determining a film plating starting point of a film plating machine, adopting point spacing and a motion track, obtaining the speed distribution of a film plating machine motion mechanism on each point of the film layer surface through a software program, and finally carrying out deterministic film plating on the film layer surface according to a preset track and speed through controlling the film plating machine motion mechanism.
In step S2 of the present embodiment, before each deterministic plating process, the method further includes: the method for acquiring the time distribution function T (x, y) of the different areas of the surface of the workpiece comprises the following steps:
(1) The film morphology of the surface of the workpiece after the previous film plating is measured, and the morphology distribution function U (x, y) of the film on the surface of the workpiece after the previous film plating is obtained, specifically: measuring the film thickness of the surface of the workpiece after the previous film coating, and recording the film thickness as a film thickness distribution function U 1 (x, y). In another embodiment, the film relief shape of the surface of the workpiece after the previous film coating can be measured and recorded as a surface shape distribution function U 2 (x,y)。
(2) According to the shape distribution of the surface film layer of the workpiece after the previous film platingThe function U (x, y) is used for obtaining a distribution function V (x, y) of the thickness of the surface of the workpiece to be coated after the previous coating, and specifically comprises the following steps: according to the film thickness distribution function U of the workpiece surface after the previous film plating 1 (x, y), respectively calculating the thickness of the film to be coated in other areas of the film surface by taking the highest point of the film surface as a reference to obtain the thickness of the film to be coated corresponding to different areas of the workpiece surface, and obtaining a distribution function V of the thickness of the film to be coated on the workpiece surface after the previous film coating 1 (x, y). In another embodiment, the surface topography profile U of the workpiece surface after the previous coating can also be used 2 (x, y), respectively calculating the thickness of the film to be coated in other areas of the film surface by taking the highest point of the film surface as a reference to obtain the thickness of the film to be coated corresponding to different areas of the workpiece surface, and obtaining a distribution function V of the thickness of the film to be coated on the workpiece surface after the previous film coating 2 (x,y)。
(3) According to a deposition function A (x, y) of the coating machine after the outlet aperture is reduced and a distribution function V (x, y) of the thickness of the surface of the workpiece to be coated after the previous coating, the time to be coated corresponding to different areas of the surface of the workpiece after the previous coating is obtained, specifically, the time to be coated corresponding to different areas of the surface of the workpiece after the previous coating is calculated by using a two-dimensional convolution calculation formula, wherein the two-dimensional convolution calculation formula is shown as a formula (1), and the time distribution function T (x, y) of the different areas of the surface of the workpiece is obtained. If a distribution function V is adopted 1 (x, y), then the corresponding time distribution function T 1 (x, y); if a distribution function V is adopted 2 (x, y), then the corresponding time distribution function T 2 (x, y), wherein the time distribution function T 1 (x, y) and time distribution function T 2 The results of the corresponding times to be coated are the same.
V(x,y)＝T(x,y)**A(x,y) (1)，
In the formula (1), V (x, y) is a distribution function of the film thickness to be coated on the surface film layer of the workpiece after the previous film coating, A (x, y) is a deposition function of a corresponding outlet aperture film coating machine, and (x, y) is the coordinates of any point on the surface of the film layer.
In step (3) of this embodiment, the deposition function a (x, y) of the coating machine after the outlet aperture is reduced includes the deposition rate corresponding to the coating machine and the outlet aperture and the process parameters that are matched with the determined deposition rate, where the expression of the deposition function a (x, y) of the coating machine after the outlet aperture is reduced is:
in the formula (2), k is a constant related to a workpiece, a coating material, related technological parameters and the like, u (x, y) is a morphology distribution obtained by performing point-to-point subtraction on morphology data of corresponding regions before and after coating, s is a coating region, and T is coating time.
In step (3) of the present embodiment, the method for obtaining the deposition function a (x, y) of the coating machine after reducing the exit aperture includes the following steps:
(a) And measuring the appearance of the film layer on the surface of the workpiece after the previous film coating, and determining the outlet aperture of the film coating machine, wherein the outlet aperture of the film coating machine is specifically smaller than the width of the minimum concave area on the surface of the film layer after the previous film coating, and a group of process parameters (pressure, process gas, temperature, power and the like) are optimized according to the requirements of the workpiece and the film coating.
(b) And (3) carrying out fixed-point timing coating on the surface of the substrate by using a coating machine with the aperture of an outlet reduced, and obtaining the shape data of a fixed-point coating area on the surface of the substrate after coating, wherein the adopted substrate and the target workpiece have the same shape and material, and the shapes of the adopted substrate and the target workpiece are similar as much as possible. Before coating, the morphology of the film layer on the surface of the substrate is measured, and the morphology data of the fixed-point coating area on the surface of the substrate before coating is obtained.
(c) Performing point-to-point subtraction on the morphology data corresponding to the fixed-point coating areas on the surfaces of the substrates before and after coating to obtain the thickness and shape distribution of the film layer of the fixed-point coating area on the surfaces of the substrates in unit time;
(d) And (3) repeating the steps (b) to (c), optimizing the process parameters of the film plating machine until the film thickness and the shape distribution of the fixed-point film plating area on the surface of the substrate reach a stable state, specifically, in the process of optimizing the process parameters of the film plating machine, when the deviation between the measured value of the film thickness and the average value of the film thickness is +/-1%, the corresponding film thickness reaches the stable state, and when the measured value of the flatness of the film is smaller than 0.03 standard wavelength, the corresponding shape distribution reaches the stable state, wherein the standard wavelength is 632.8nm, thereby obtaining the deposition rate of the film plating machine corresponding to the fixed-point film plating area on the surface of the substrate and the process parameters matched with the determination of the deposition rate, and obtaining the deposition function A (x, y) of the film plating machine after the outlet aperture is reduced.
In the invention, when coating is carried out by adopting coating machines with different outlet apertures, the method can be adopted to obtain the deposition function A (x, y) of the coating machine with the corresponding outlet aperture.
S3, measuring the film morphology of the surface of the workpiece after deterministic coating, specifically measuring the film thickness of the surface of the workpiece after deterministic coating, if the thickness uniformity does not meet the requirement, jumping to S2 to perform an iterative process, otherwise ending the coating process. In another embodiment, the film layer relief morphology of the workpiece surface after deterministic film plating can also be measured, if the flatness of the shape does not meet the requirements, the process jumps to S2 for iteration, otherwise, the film plating process is ended.
In step S3 of the embodiment, if the iterative process of S2 cannot meet the requirement, the exit aperture of the film plating machine is further reduced to continue deterministic film plating and the corresponding iterative process, specifically, when the precision improvement rate of change f of two adjacent processes is less than 10%, the exit aperture of the film plating machine is required to be further reduced, and the process returns to step S2 to perform deterministic film plating and the corresponding iterative process by using the film plating machine with smaller exit aperture until the requirement is met, and the film plating process is ended.
In this embodiment, in the deterministic coating process, the process parameters and the working environment adopted by the coating machine are consistent with the corresponding process parameters and working environment when determining the deposition function a (x, y) of the coating machine.
In this embodiment, the precision improvement change rate f of the two adjacent processes is calculated by the formula (3):
in the magnetron sputtering coating process, before coating is completed, the outlet aperture of a coating machine is reduced, the deterministic coating is carried out on the surface of a workpiece by using the coating machine with the reduced outlet aperture according to the time distribution function T (x, y) of different areas on the surface of the workpiece, particularly, the surface of the workpiece is coated by using the existing equipment under the condition of determining the deposition rate according to the time to be coated corresponding to the different areas on the surface of the workpiece after the previous coating, so that the high-precision coating of the thickness of the film layer on the surface of the workpiece can be realized, the high-precision coating of the plane flatness of the film layer can be realized, and meanwhile, the magnetron sputtering coating process also has the advantages of simple process, low cost, easiness in realization, high coating efficiency and the like, and in addition, has excellent coating effect on substrates and film layers of different materials, high-efficiency and high-precision coating capability, high use value and good application prospect.
The above description is only of the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. While the invention has been described in terms of preferred embodiments, it is not intended to be limiting. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or equivalent embodiments using the method and technical solution disclosed above without departing from the spirit and technical solution of the present invention. Therefore, any simple modification, equivalent substitution, equivalent variation and modification of the above embodiments according to the technical substance of the present invention, which do not depart from the technical solution of the present invention, still fall within the scope of the technical solution of the present invention.
Claims (9)
1. The magnetron sputtering coating process is characterized by comprising the following steps of:
s1, coating a film on the surface of a workpiece by using a film coating machine;
s2, stopping coating before coating, reducing the outlet aperture of the coating machine, and carrying out deterministic coating on the surface of the workpiece by using the coating machine with the outlet aperture reduced according to time distribution functions T (x, y) of different areas on the surface of the workpiece; the time distribution function T (x, y) comprises the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating;
s3, measuring the film morphology of the surface of the workpiece after deterministic film plating, if the film morphology does not meet the requirement, jumping to the S2 for performing an iterative process, otherwise ending the film plating process; if the iterative process of S2 can not meet the requirements, further reducing the outlet aperture of the coating machine, continuing deterministic coating and corresponding iterative processes until the requirements are met, and ending the coating process.
2. The magnetron sputtering coating process according to claim 1, wherein in S2, before each deterministic coating process, the process further comprises: acquiring time distribution functions T (x, y) of different areas on the surface of the workpiece; the method for acquiring the time distribution function T (x, y) of different areas of the surface of the workpiece comprises the following steps:
(1) Measuring the morphology of the film layer on the surface of the workpiece after the previous film coating, and obtaining a morphology distribution function U (x, y) of the film layer on the surface of the workpiece after the previous film coating;
(2) According to the shape distribution function U (x, y) of the surface film layer of the workpiece after the previous film plating, obtaining a distribution function V (x, y) of the thickness of the surface film to be plated of the workpiece after the previous film plating;
(3) And obtaining the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating according to the deposition function A (x, y) of the coating machine after the outlet aperture is reduced and the distribution function V (x, y) of the thickness to be coated on the surface of the workpiece after the previous coating, and obtaining the time distribution function T (x, y) of the different areas on the surface of the workpiece.
3. The magnetron sputtering coating process according to claim 2, wherein in (1), the profile distribution function U (x, y) of the workpiece surface film layer after the previous coating comprises a film thickness distribution function U 1 (x, y) or surface topography distribution function U 2 (x, y); the film thickness distribution function U 1 (x, y) comprises film thicknesses corresponding to different areas on the surface of the workpiece after the previous film coating; the surface topography distribution function U 2 (x, y) comprises film layer fluctuation morphology corresponding to different areas on the surface of the workpiece after the previous film coating;
in the step (2), the distribution function V (x, y) of the thickness of the to-be-coated film on the surface of the workpiece after the previous coating comprises the thickness of the to-be-coated film corresponding to different areas on the surface of the workpiece after the previous coating; the distribution function V (x, y) of the thickness of the to-be-coated film on the surface of the workpiece after the previous film coating is obtained by the following method: respectively calculating the thickness of the film to be coated in other areas of the surface of the film by taking the highest point of the film layer on the surface of the workpiece after the previous film coating as a reference, so as to obtain the thickness of the film to be coated corresponding to the different areas of the surface of the workpiece, and obtaining a distribution function V (x, y) of the thickness of the film to be coated on the surface of the workpiece after the previous film coating;
in the step (3), the time to be coated corresponding to different areas on the surface of the workpiece after the previous coating is determined by a two-dimensional convolution calculation formula; the two-dimensional convolution calculation formula is as follows:
V(x,y)＝T(x,y)**A(x,y) (1)，
in the formula (1), V (x, y) is a distribution function of the film thickness to be coated on the surface film layer of the workpiece after the previous film coating, A (x, y) is a deposition function of a corresponding outlet aperture film coating machine, and (x, y) is the coordinates of any point on the surface of the film layer;
the deposition function A (x, y) of the coating machine after the outlet aperture is reduced comprises a deposition rate corresponding to the coating machine, and an outlet aperture and a technological parameter which are matched with the determined deposition rate; the expression of the deposition function A (x, y) of the coating machine after the outlet aperture is reduced is as follows:
in the formula (2), k is a constant related to a workpiece, a coating material and related process parameters, u (x, y) is a profile distribution obtained by performing point-to-point subtraction on profile data of corresponding regions before and after coating, s is a coating region, and T is coating time.
4. The magnetron sputtering coating process according to claim 3, wherein in (3), the method for obtaining the deposition function a (x, y) of the coating machine after the reduction of the exit aperture comprises the steps of:
(a) Measuring the appearance of a film layer on the surface of a workpiece after the previous film coating, and determining the exit aperture of a film coating machine;
(b) Performing fixed-point coating on the surface of the substrate by using a coating machine with the aperture reduced at an outlet, and obtaining the shape data of fixed-point coating areas on the surface of the substrate before and after coating;
(c) Performing point-to-point subtraction on the morphology data corresponding to the fixed-point coating areas on the surfaces of the substrates before and after coating to obtain the thickness and shape distribution of the film layer of the fixed-point coating area on the surfaces of the substrates in unit time;
(d) And (3) repeating the steps (b) to (c), optimizing the process parameters of the coating machine until the film thickness and shape distribution of the fixed-point coating area on the surface of the substrate in unit time reach a stable state, obtaining the deposition rate of the coating machine corresponding to the fixed-point coating area on the surface of the substrate and the process parameters matched with the process parameters when the deposition rate is determined, and obtaining the deposition function A (x, y) of the coating machine after the outlet aperture is reduced.
5. The magnetron sputtering coating process according to claim 4, wherein in (a), the outlet aperture of the coating machine is smaller than the width of the smallest recessed area of the surface of the film layer after the previous coating; the aperture of the outlet of the coating machine is adjusted by adopting a magnetic field isolation plate; the magnetic field isolation plate is provided with through holes with different apertures;
in the step (b), the shape and the material of the substrate are the same as those of the workpiece;
in the step (d), in the optimization process of the process parameters of the film plating, when the deviation between the measured value of the thickness of the film and the average value of the thickness of the film is +/-1%, the corresponding film thickness reaches a stable state, and when the measured value of the flatness of the film is smaller than 0.03 standard wavelength, the corresponding shape distribution reaches a stable state, wherein the standard wavelength is 632.8nm; the process parameters include at least one of pressure, process gas, temperature, power.
6. The magnetron sputtering coating process according to any one of claims 1 to 5, wherein the thickness of the single coating on the surface of the workpiece is less than or equal to 95% of the thickness of the residual coating on the surface of the workpiece.
7. The magnetron sputtering coating process according to claim 6, wherein the thickness of the single coating on the surface of the workpiece is 90% -95% of the thickness of the residual coating on the surface of the workpiece.
8. The magnetron sputtering coating process according to any one of claims 1 to 5, wherein the process parameters and the working environment adopted by the coating machine are consistent with the corresponding process parameters and working environment when determining the deposition function a (x, y) of the coating machine in the deterministic coating process.
9. The magnetron sputtering coating process according to any one of claims 1 to 5, wherein if the iterative process of S2 fails to meet the requirement, the corresponding criterion is that the precision improvement rate of change f of the two adjacent processes is less than 10%; the precision improvement change rate f of the two adjacent processes is calculated by the formula (3):
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