CN117023509A - Metal hole filling method and manufacturing method of uncooled infrared detector - Google Patents
Metal hole filling method and manufacturing method of uncooled infrared detector Download PDFInfo
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- CN117023509A CN117023509A CN202311012066.8A CN202311012066A CN117023509A CN 117023509 A CN117023509 A CN 117023509A CN 202311012066 A CN202311012066 A CN 202311012066A CN 117023509 A CN117023509 A CN 117023509A
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- 239000002184 metal Substances 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 141
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000009713 electroplating Methods 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 182
- 239000011810 insulating material Substances 0.000 claims description 55
- 229910052755 nonmetal Inorganic materials 0.000 claims description 51
- 239000011797 cavity material Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 33
- 239000011241 protective layer Substances 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 20
- 238000001259 photo etching Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000004070 electrodeposition Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
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- 239000007787 solid Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 238000003331 infrared imaging Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Materials Engineering (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a metal hole filling method and a manufacturing method of an uncooled infrared detector. According to the high-filling-rate metal hole filling scheme based on the electroplating process, based on the semiconductor process, the seed layer material is deposited at the bottom of the hole to be filled, and the metal film layer is electroplated from the bottom of the hole step by step in an electroplating manner, so that the high-filling-rate and high-reliability hole filling scheme is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a metal hole filling method and a manufacturing method of an uncooled infrared detector, and more particularly relates to a high-filling-rate metal hole filling method and a manufacturing method of an area array-level packaged uncooled infrared detector.
Background
The infrared imaging technology is widely applied to various fields of medical treatment, security protection, military, industry and agriculture, environmental protection and the like, and the core device is an infrared focal plane detector. The infrared detectors can be classified into refrigeration type infrared detectors and non-refrigeration type infrared detectors according to their operation principle.
Uncooled infrared detectors are devices that convert absorbed infrared energy into an electrical signal through a focal plane array. The uncooled infrared detector absorbs infrared rays through the infrared detection unit, converts the infrared rays into heat energy, changes the electrical characteristics of the detector material caused by the heat energy, converts infrared energy into electric signals, and converts the electric signals through the reading circuit.
The uncooled infrared detector area array level packaging is to integrate the packaging technology into the whole MEMS technology process, and the whole area array packaging is carried out by adopting a specific film layer on the basis of the completed infrared MEMS microbridge, so that the film packaging of the single-wafer integrated technology is realized.
In the process of constructing the whole area array level packaging structure, a column for supporting the cavity needs to be manufactured on the microstructure, and the column is a solid column, so that the stability of the structure is ensured. In the prior art, semiconductor coating equipment such as PVD (physical vapor deposition), CVD (chemical vapor deposition) and the like cannot effectively achieve the effect of solid hole filling in filling small holes, and an empty plating phenomenon often occurs in the middle position of the hole filling, so that the structural stability is poor.
Therefore, a solution is needed to solve the technical problem of low filling rate of deep hole coating in the existing packaging technology.
Disclosure of Invention
The invention provides a high-filling-rate metal hole filling method and a manufacturing method of an area array level packaging uncooled infrared detector, which at least can solve part of problems in the prior art.
In order to solve the technical problems, according to one aspect of the present invention, the following technical solutions are provided:
a high-filling-rate metal hole filling method comprises the following steps:
providing a hole structure;
forming a seed layer metal at the bottom of the hole and a non-metal protection layer on the inner side wall of the hole;
and forming metal support columns in the holes through an electroplating process to fill the holes.
As a preferable scheme of the high-filling-rate metal hole filling method, the method for forming the seed layer metal at the bottom of the hole and the nonmetal protective layer on the inner side wall of the hole specifically comprises the following steps:
1) Depositing seed layer metal at the bottom, inner side wall and both sides of the upper surface of the hole;
2) Depositing a non-metal protective layer on the surface of the seed metal layer;
3) And removing part or all of the non-metal protective layer at the bottom of the hole.
As a preferable scheme of the high-filling-rate metal hole filling method, the method for removing the nonmetal protective layer at the bottom of the hole specifically comprises the following steps:
4) Arranging a first insulating material layer on the surface of the non-metal protective layer;
5) Removing part of the first insulating material layer at the bottom of the hole through photoetching patterning process;
6) Removing part of the non-metal protective layer at the bottom of the hole through an etching process;
7) And removing the residual first insulating material layer through a cleaning process to expose the seed metal layer at the bottom of the hole.
As a preferred scheme of the high-filling-rate metal hole filling method, the method for forming the metal support column in the hole through the electroplating process specifically comprises the following steps:
8) And depositing a metal strut above the seed metal layer at the bottom of the hole from bottom to top by using an electrochemical deposition process until the hole is filled.
As a preferable scheme of the high-filling-rate metal hole filling method, the method further comprises the following steps after forming the metal support columns in the holes through an electroplating process:
9) Disposing a second insulating material layer over the metal support posts by a photolithographic patterning process;
10 Sequentially removing the non-metal protection layers which are not protected by the second insulating material layer and the seed metal layer on the two sides of the upper surface of the hole through an etching process;
11 The second insulating material layer is removed through a cleaning process, and high-filling-rate filling of the holes is completed.
As a preferable scheme of the high-filling-rate metal hole filling method, the seed metal layer is made of a multi-layer material formed by one or more of titanium, copper and gold.
As a preferable scheme of the high-filling-rate metal hole filling method, the material of the metal support column is any one of copper, nickel, gold, tin, titanium and silver.
As a preferable scheme of the high-filling-rate metal hole filling method, the materials of the first insulating material layer and the second insulating material layer are multilayer materials formed by one or more of photoresist, polyimide, silicon dioxide and silicon nitride.
In order to solve the above technical problems, according to another aspect of the present invention, the following technical solutions are provided:
a manufacturing method of an area array level packaging uncooled infrared detector comprises the following steps:
manufacturing a pixel micro-bridge structure on a substrate, wherein the pixel micro-bridge structure comprises an anchor post with a cavity and a bridge deck supported by the anchor post;
filling the cavity of the anchor column by the high-filling-rate metal hole filling method;
and depositing a cavity structure, wherein the cavity part is supported on the filled anchor post.
As a preferred scheme of the manufacturing method of the planar array packaged uncooled infrared detector, the deposition cavity structure specifically comprises the following steps:
arranging a sacrificial layer on the pixel micro-bridge structure and the substrate, and removing the sacrificial layer above the filled anchor post through photoetching patterning process;
and depositing cavity material, wherein the cavity material partially falls on the filled anchor post.
As the preferred scheme of the manufacturing method of the planar array packaged uncooled infrared detector, the manufacturing method further comprises the steps of forming a release hole in the cavity and depositing an antireflection film layer above the cavity.
The beneficial effects of the invention are as follows:
1. the invention provides a high-filling-rate metal hole filling scheme based on an electroplating process, which is characterized in that a seed layer material is deposited at the bottom of a hole to be filled based on a semiconductor process, a metal film layer is electroplated from the bottom of the hole gradually upwards in an electroplating manner, so that the high-filling-rate and high-reliability hole filling scheme is achieved, and meanwhile, a non-metal protection layer is arranged on the inner side wall of the hole and used for protecting the inner side wall of the hole in the electroplating process. By the hole filling process method provided by the invention, a feasible process scheme is provided for the solid cavity support column in the area array level package, and the stability of the infrared detector structure is ensured.
2. The structure is introduced into the area array level package, the existing process is optimized, the existing process uses a glue sacrificial layer, and the glue sacrificial layer is filled through a spin coating process, but the material is easy to deform when heated, so that the structure stability is poor. According to the invention, an electroplating process scheme is designed for the area array packaging structure through an electroplating process, and holes are filled with electroplated metal to form the metal support columns, so that the structural stability is greatly enhanced.
3. The metal hole filling process method is compatible with the bridge deck structure of the infrared micro-measurement radiation thermometer, and the nonmetallic protective layer is used for physically isolating the electroplating seed layer from the bridge deck structure in the process, so that the flatness of the film layer in the electroplating process is ensured, and the influence of the electroplating process on other film layers is eliminated. The size of the pattern is precisely controlled through a photoetching process, high-filling metal is formed through an electroplating process, and an external residual film layer is removed through a stripping process. The invention designs a complete and feasible technological preparation scheme.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a process for depositing a first nonmetallic film layer in a hole according to the present invention;
FIG. 2 is a schematic diagram of a process for depositing a seed metal layer in a hole according to the present invention;
FIG. 3 is a schematic diagram of a process for depositing a non-metallic protective layer in a hole according to the present invention;
FIG. 4 is a schematic illustration of a photolithographic patterning process in a hole of the present invention to remove a portion of the non-metallic protective layer;
FIG. 5 is a schematic illustration of etching away a portion of a non-metal protection layer in a hole according to the present invention;
FIG. 6 is a schematic illustration of etching away the remaining first insulating material layer in the holes of the present invention;
FIG. 7 is a schematic view of a structure of a deposited metal support column in a hole of the present invention;
FIG. 8 is a schematic view of a second insulating material layer disposed over a metal support pillar according to the present invention;
FIG. 9 is a diagram of an etched hole structure with metal support posts in accordance with the present invention;
FIG. 10 is a schematic diagram of the uncooled infrared detector of the present invention.
Reference numerals illustrate:
1-hole, 2-seed metal layer, 3-non-metal film layer, 4-non-metal protective layer, 5-first insulating material layer, 6-metal support column, 7-second insulating material layer, 8-cavity, 9-bridge deck.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description will be made clearly and fully with reference to the technical solutions in the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides a high-filling-rate metal hole filling scheme based on an electroplating process and a manufacturing method of an area array-level packaging uncooled infrared detector. Based on the semiconductor manufacturing process, a seed layer material is deposited at the bottom of a hole to be filled, and a metal film layer is electroplated from the bottom of the hole step by step in an electroplating mode, so that a hole filling scheme with high filling rate and high reliability is achieved.
A high-filling-rate metal hole filling method comprises the following steps:
providing a hole structure;
forming a seed layer metal at the bottom of the hole and a non-metal protection layer on the inner side wall of the hole;
and forming metal support columns in the holes through an electroplating process to fill the holes.
Further, the forming the seed layer metal at the bottom of the hole and the nonmetal protective layer on the inner side wall of the hole specifically comprises the following steps:
depositing seed layer metal at the bottom, inner side wall and both sides of the upper surface of the hole;
depositing a non-metal protective layer on the surface of the seed metal layer;
portions of the non-metallic protective layer at the bottom of the hole are removed, alternatively, all of the non-metallic protective layer at the bottom of the hole may be removed.
As a preferable scheme of the high-filling-rate metal hole filling method, the method for removing the nonmetal protective layer at the bottom of the hole specifically comprises the following steps:
arranging a first insulating material layer on the surface of the non-metal protective layer;
removing part or all of the first insulating material layer at the bottom of the hole through photoetching patterning process;
removing part or all of the non-metal protective layer at the bottom of the hole through an etching process;
and removing the residual first insulating material layer through a cleaning process to expose the seed metal layer at the bottom of the hole.
Further, the forming the metal support column in the hole through the electroplating process specifically comprises the following steps:
and depositing a metal support column above the seed metal layer at the bottom of the hole from bottom to top by using an electrochemical deposition process until the hole is filled.
Further, after forming the metal support columns in the holes through the electroplating process, the method further comprises the following steps:
disposing a second insulating material layer over the metal support posts by a photolithographic patterning process;
sequentially removing the non-metal protection layers which are not protected by the second insulating material layer and the seed metal layer on the two sides of the upper surface of the hole through an etching process;
and removing the second insulating material layer through a cleaning process to finish high-filling-rate filling of the holes.
Further, the seed metal layer is made of a multi-layer material formed by one or more of titanium, copper and gold.
As a preferable scheme of the high-filling-rate metal hole filling method, the material of the metal support column is any one of copper, nickel, gold, tin, titanium and silver.
Further, the materials of the first insulating material layer and the second insulating material layer are multi-layer materials formed by one or more of photoresist, polyimide, silicon dioxide and silicon nitride.
Further, at least some of the problems of the prior art may be solved.
A manufacturing method of an area array level packaging uncooled infrared detector comprises the following steps:
manufacturing a pixel micro-bridge structure on a substrate, wherein the pixel micro-bridge structure comprises an anchor post with a cavity and a bridge deck supported by the anchor post;
filling the cavity of the anchor column by the high-filling-rate metal hole filling method;
and depositing a cavity structure, wherein the cavity part is supported on the filled anchor post.
Further, the deposition cavity structure specifically includes the following steps:
arranging a sacrificial layer on the pixel micro-bridge structure and the substrate, and removing the sacrificial layer above the filled anchor post through photoetching patterning process;
and depositing cavity material, wherein the cavity material partially falls on the filled anchor post.
Further, the method also comprises the steps of forming a release hole on the cavity and depositing an antireflection film layer above the cavity.
The process of the present invention is illustrated in the following by specific examples.
Example 1
As shown in fig. 1-9, a high-filling-rate metal hole filling method is adopted, and a hole 1 to be deposited is a hole structure in an uncooled infrared detector area array level packaging microstructure and has a high aperture ratio;
the high-filling-rate metal hole filling method comprises the following steps:
depositing a non-metal film layer 3 on the inner side wall of the hole 1 and on both sides of the upper surface of the hole 1, wherein the non-metal film layer 3 can also be the hole 1, and the non-metal film layer 3 does not need to be deposited again;
a seed metal layer 2 is deposited on the surface of the non-metal film layer 3 and the bottom of the hole 1 by utilizing a deposition process, the seed metal layer 2 is made of a copper layer, and the seed metal layer 2 can provide a metal surface with a conductive function for the subsequent deposition of the metal support column 6;
a non-metal protection layer 4 is deposited on the surface of the seed metal layer 2, and the non-metal protection layer 4 is used for protecting the side wall in the hole 1 in the electrochemical deposition process of the hole 1;
a first insulating material layer 5 is arranged on the surface of the non-metal protection layer 4, the first insulating material layer 5 is made of photoresist material, and the photoresist material is used for providing mask protection in a photoetching patterning process;
removing part of the first insulating material layer 5 at the bottom of the hole 1 by a photoetching patterning process;
removing part of the nonmetallic protective layer 4 at the bottom of the hole through an etching process;
removing the residual first insulating material layer 5 through a cleaning process, and leaking out the seed metal layer 2 at the bottom of the hole 1, so that the non-metal protection layer 4 does not cover the seed metal layer 2, and ensuring that the seed metal layer 2 is completely exposed and conductive;
depositing metal support columns 6 above the seed metal layer 2 at the bottom of the hole 1 from bottom to top by using an electrochemical deposition process until the hole 1 is filled, wherein the material of the metal support columns 6 is copper;
a second insulating material layer 7 is arranged above the metal support columns 6 through a photoetching patterning process, and the second insulating material layer 7 is used for protecting the metal support columns 6 and preventing the metal support columns 6 from being corroded by a subsequent etching process;
sequentially removing the non-metal protection layer 4 and the seed metal layer 2 which are not protected by the second insulating material layer 7 on the two sides of the upper surface of the hole 1 through an etching process, wherein the second insulating material layer 7 is a photoresist layer;
the second insulating material layer 7 is removed by a cleaning process, and the high-filling-rate filling of the holes 1 is completed.
Example 2
As shown in fig. 1-9, a high-filling-rate metal hole filling method is adopted, and a hole 1 to be deposited is a hole structure in an uncooled infrared detector area array level packaging microstructure and has a high aperture ratio;
the high-filling-rate metal hole filling method comprises the following steps:
depositing a non-metal film layer 3 on the inner side wall of the hole 1 and on both sides of the upper surface of the hole 1, wherein the non-metal film layer 3 can also be the hole 1, and the non-metal film layer 3 does not need to be deposited again;
a seed metal layer 2 is deposited on the surface of the non-metal film layer 3 and the bottom of the hole 1 by utilizing a deposition process, the seed metal layer 2 is made of a titanium layer, and the seed metal layer 2 can provide a metal surface with a conductive function for the subsequent deposition of the metal support column 6;
a non-metal protection layer 4 is deposited on the surface of the seed metal layer 2, and the non-metal protection layer 4 is used for protecting the side wall in the hole 1 in the electrochemical deposition process of the hole 1;
a first insulating material layer 5 is arranged on the surface of the non-metal protective layer 4, the first insulating material layer 5 is a polyimide layer, and a photoresist material is used for providing mask protection in a photoetching patterning process;
removing part of the first insulating material layer 5 at the bottom of the hole 1 by a photoetching patterning process;
removing part of the nonmetallic protective layer 4 at the bottom of the hole through an etching process;
removing the residual first insulating material layer 5 through a cleaning process, and leaking out the seed metal layer 2 at the bottom of the hole 1, so that the non-metal protection layer 4 does not cover the seed metal layer 2, and ensuring that the seed metal layer 2 is completely exposed and conductive;
depositing metal support columns 6 above the seed metal layer 2 at the bottom of the hole 1 from bottom to top by using an electrochemical deposition process until the hole 1 is filled, wherein the material of the metal support columns 6 is nickel;
a second insulating material layer 7 is arranged above the metal support columns 6 through a photoetching patterning process, and the second insulating material layer 7 is used for protecting the metal support columns 6 and preventing the metal support columns 6 from being corroded by a subsequent etching process;
sequentially removing the non-metal protection layer 4 and the seed metal layer 2 which are not protected by the second insulating material layer 7 on the two sides of the upper surface of the hole 1 through an etching process, wherein the second insulating material layer 7 is a polyimide layer;
the second insulating material layer 7 is removed by a cleaning process, and the high-filling-rate filling of the holes 1 is completed.
Example 3
As shown in fig. 1-9, a high-filling-rate metal hole filling method is adopted, and a hole 1 to be deposited is a hole structure in an uncooled infrared detector area array level packaging microstructure and has a high aperture ratio;
the high-filling-rate metal hole filling method comprises the following steps:
depositing a non-metal film layer 3 on the inner side wall of the hole 1 and on both sides of the upper surface of the hole 1, wherein the non-metal film layer 3 can also be the hole 1, and the non-metal film layer 3 does not need to be deposited again;
a seed metal layer 2 is deposited on the surface of the non-metal film layer 3 and the bottom of the hole 1 by utilizing a deposition process, the seed metal layer 2 is made of a copper layer, and the seed metal layer 2 can provide a metal surface with a conductive function for the subsequent deposition of the metal support column 6;
a non-metal protection layer 4 is deposited on the surface of the seed metal layer 2, and the non-metal protection layer 4 is used for protecting the side wall in the hole 1 in the electrochemical deposition process of the hole 1;
a first insulating material layer 5 is arranged on the surface of the non-metal protection layer 4, the first insulating material layer 5 is a silicon oxide layer, and a photoresist material is used for providing mask protection in a photoetching patterning process;
removing part of the first insulating material layer 5 at the bottom of the hole 1 by a photoetching patterning process;
removing part of the nonmetallic protective layer 4 at the bottom of the hole through an etching process;
removing the residual first insulating material layer 5 through a cleaning process, and leaking out the seed metal layer 2 at the bottom of the hole 1, so that the non-metal protection layer 4 does not cover the seed metal layer 2, and ensuring that the seed metal layer 2 is completely exposed and conductive;
depositing metal support columns 6 above the seed metal layer 2 at the bottom of the hole 1 from bottom to top by using an electrochemical deposition process until the hole 1 is filled, wherein the material of the metal support columns 6 is nickel;
a second insulating material layer 7 is arranged above the metal support columns 6 through a photoetching patterning process, and the second insulating material layer 7 is used for protecting the metal support columns 6 and preventing the metal support columns 6 from being corroded by a subsequent etching process;
sequentially removing the non-metal protection layer 4 and the seed metal layer 2 which are not protected by the second insulating material layer 7 on the two sides of the upper surface of the hole 1 through an etching process, wherein the second insulating material layer 7 is a silicon nitride layer;
the second insulating material layer 7 is removed by a cleaning process, and the high-filling-rate filling of the holes 1 is completed.
Example 4
As shown in fig. 10, a method for manufacturing an area array-level packaged uncooled infrared detector includes the following steps:
manufacturing a pixel micro-bridge structure on a substrate, wherein the substrate is a substrate with a built-in readout circuit, the pixel micro-bridge structure comprises an anchor post with a cavity and a bridge deck 9 supported by the anchor post, and the inner wall of the cavity is provided with a nonmetallic film layer;
filling the cavity of the anchor post by adopting the high-filling-rate metal hole filling method in any one of the embodiments 1 to 3;
arranging a sacrificial layer on the pixel micro-bridge structure and the substrate, and removing the sacrificial layer above the filled anchor post through photoetching patterning process;
depositing a cavity 8 material, wherein the cavity 8 material part falls on the filled anchor post; the formed cavity 8 comprises a supporting part supported on the filled anchor post and a suspending part connected with the top of the supporting part, and the supporting part is U-shaped;
the cavity 8 is provided with a release hole for releasing the sacrificial layer, and an antireflection film layer is deposited above the cavity 8 for blocking the release hole.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the content of the present invention or direct/indirect application in other related technical fields are included in the scope of the present invention.
Claims (10)
1. The high-filling-rate metal hole filling method is characterized by comprising the following steps of:
providing a hole (1) structure;
forming a seed layer metal (2) at the bottom of the hole (1) and a non-metal protection layer (4) on the inner side wall of the hole (1);
and forming metal support columns (6) in the holes (1) through an electroplating process, so that the holes (1) are filled.
2. The high-filling-rate metal hole filling method according to claim 1, wherein the method comprises the following steps: the method for forming the seed layer metal (2) at the bottom of the hole (1) and the nonmetal protective layer (4) on the inner side wall of the hole (1) specifically comprises the following steps:
depositing seed layer metal (2) at the bottom, the inner side wall and the two sides of the upper surface of the hole (1);
depositing a non-metal protection layer (4) on the surface of the seed metal layer (2);
the nonmetallic protective layer (4) at the bottom of the hole (1) is removed.
3. The high-filling-rate metal hole filling method according to claim 2, wherein the method comprises the following steps: the step of removing the nonmetallic protective layer (4) at the bottom of the hole specifically comprises the following steps:
a first insulating material layer (5) is arranged on the surface of the nonmetallic protective layer (4);
removing part of the first insulating material layer (5) at the bottom of the hole (1) through a photoetching patterning process;
removing part of the nonmetal protective layer (4) at the bottom of the hole (1) through an etching process;
the remaining first layer of insulating material (5) is removed by a cleaning process, exposing the seed metal layer (2) at the bottom of the hole (1).
4. A high fill metal hole filling method according to claim 3, wherein: the metal support column (6) is formed in the hole (1) through an electroplating process specifically comprises the following steps:
and (3) depositing a metal support column (6) above the seed metal layer (2) at the bottom of the hole (1) from bottom to top by using an electrochemical deposition process until the hole (1) is filled.
5. The high-filling-rate metal hole filling method according to claim 4, wherein the method comprises the following steps: the method further comprises the following steps after forming the metal support columns (6) in the holes (1) through an electroplating process:
a second insulating material layer (7) is arranged above the metal support columns (6) through a photoetching patterning process;
sequentially removing the non-metal protection layer (4) and the seed metal layer (2) which are not protected by the second insulating material layer (7) on the two sides of the upper surface of the hole (1) through an etching process;
and removing the second insulating material layer (7) through a cleaning process to finish high-filling-rate filling of the holes (1).
6. A high fill metal hole filling method according to any one of claims 1-5, wherein: the seed metal layer (2) is made of a multi-layer material formed by one or more of titanium, copper and gold.
7. A high fill metal hole filling method according to any one of claims 1-5, wherein: the material of the metal support column (6) is any one of copper, nickel, gold, tin, titanium and silver.
8. The high-filling-rate metal hole filling method according to claim 5, wherein the method comprises the following steps: the material of the first insulating material layer (5) and the second insulating material layer (7) is a multi-layer material formed by one or more of photoresist, polyimide, silicon dioxide and silicon nitride.
9. The manufacturing method of the planar array level packaging uncooled infrared detector is characterized by comprising the following steps of:
manufacturing a pixel micro-bridge structure on a substrate, wherein the pixel micro-bridge structure comprises an anchor post with a cavity and a bridge deck supported by the anchor post;
filling the cavity of the anchor post by the high-filling-rate metal hole filling method of any one of claims 1-8;
and depositing a cavity structure, wherein the cavity part is supported on the filled anchor post.
10. The method for manufacturing an area array packaged uncooled infrared detector of claim 9, wherein the deposition cavity structure comprises the following steps:
arranging a sacrificial layer on the pixel micro-bridge structure and the substrate, and removing the sacrificial layer above the filled anchor post through photoetching patterning process;
and depositing cavity material, wherein the cavity material partially falls on the filled anchor post.
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