CN117015249A - Perovskite crystal re-dissolution strategy-based perovskite solar cell preparation method - Google Patents
Perovskite crystal re-dissolution strategy-based perovskite solar cell preparation method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 title claims abstract description 15
- 238000004090 dissolution Methods 0.000 title claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 59
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229940071870 hydroiodic acid Drugs 0.000 claims abstract description 51
- 230000031700 light absorption Effects 0.000 claims abstract description 40
- 239000002243 precursor Substances 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 81
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 37
- 230000005525 hole transport Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 37
- 238000004528 spin coating Methods 0.000 claims description 34
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 24
- 238000003786 synthesis reaction Methods 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 19
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 17
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000001914 filtration Methods 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- ABFQGXBZQWZNKI-UHFFFAOYSA-N 1,1-dimethoxyethanol Chemical compound COC(C)(O)OC ABFQGXBZQWZNKI-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000012296 anti-solvent Substances 0.000 claims description 8
- 239000011550 stock solution Substances 0.000 claims description 8
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000007784 solid electrolyte Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
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- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 14
- 239000010408 film Substances 0.000 description 12
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- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 8
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical class I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 description 1
- -1 ammonium halide Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 238000010961 commercial manufacture process Methods 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention provides a perovskite solar cell preparation method based on a perovskite crystal re-dissolution strategy, which comprises the following steps: sequentially forming an electron transmission layer, a perovskite light absorption layer, a passivation layer, a hole transmission layer and a metal electrode layer on the surface of a conductive substrate to obtain a perovskite solar cell; the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product. Compared with the prior art, the preparation method provided by the invention has the advantage that the FAPbI is pre-synthesized by the aid of the hydroiodic acid 3 Powder, improvement of FAPbI 3 Powder quality, re-dissolution of optimized powder as high purity precursor of deposited film to make perovskite thinThe crystallinity of the film is improved, fewer defects are generated, the phase distribution and the environmental stability are good, and the efficiency, the stability and the repeatability of the device are greatly improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a perovskite solar cell based on a perovskite crystal redissolution strategy.
Background
In recent years perovskite solar cells have evolved rapidly, and the most advanced high efficiency perovskite solar cells are typically manufactured by direct mixing of extremely expensive high purity (i.e. 99.999%) lead halide and organic ammonium halide raw materials in a polar aprotic solvent or solvent mixture, which increases the production costs and is a great burden for future commercial manufacture. Furthermore, the quality of raw materials varies from batch to batch, which is detrimental to reproducibility of efficient equipment. The hampered reproducibility of the apparatus is also due to weighing errors during the preparation and to the different solubilities of the precursor components in the polar aprotic solvent, which are detrimental to precise stoichiometric control of the perovskite component produced. Worse still, the raw material used to prepare the perovskite, lead iodide (PbI 2 ) Particles and formamidine iodides (FAI), are sensitive to moisture and air, which presents a great challenge to obtain stable perovskite optoelectronic devices with long lifetimes. Clearly, the inherent instability of the perovskite component needs to be addressed rapidly in order to increase the lifetime of PSCs to 25Over the years, it is comparable to conventional silicon-based solar cells.
A popular solution in recent years is PbI first 2 And FAI synthesis FAPbI 3 The powder is then used in a subsequent thin film processing step. Powder processing is generally well known in the ceramic or metal arts, and corresponding processing methods are established in an industrial setting. Also in the field of halide perovskite, there has been great interest in preparing perovskite solar cells in powder form. It has been encouraging that the efficiency of perovskite solar cells prepared using perovskite crystal powder re-dissolution strategies has increased rapidly from less than 10% to 25.5%, underscores the popularity and effectiveness of this emerging strategy. Thus, the unprecedented advantages of efficient, stable, renewable, low cost PSCs are produced using perovskite crystal re-dissolution strategies.
Disclosure of Invention
The present invention has for its object to further improve FAPbI 3 The quality of the powder and the performance of the perovskite solar cell are improved, and a preparation method of the perovskite solar cell based on a perovskite crystal re-dissolution strategy is provided, wherein FAPbI is pre-synthesized by a hydroiodic acid-assisted reverse temperature crystallization method 3 Powder, improvement of FAPbI 3 Powder quality; the optimized powder is used as a high-purity precursor for depositing the perovskite film, so that the crystallinity of the perovskite film is improved, fewer defects are caused, the phase distribution and the environmental stability are good, the requirements of the solar cell with high efficiency and good stability in the future are met, and the commercialization process of the perovskite solar cell is further promoted.
The invention provides a perovskite solar cell preparation method based on a perovskite crystal re-dissolution strategy, which comprises the following steps:
sequentially forming an electron transmission layer, a perovskite light absorption layer, a passivation layer, a hole transmission layer and a metal electrode layer on the surface of a conductive substrate to obtain a perovskite solar cell;
the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product.
Preferably, the conductive substrate is ITO glass, FTO glass, AZO glass or conductive PET.
Preferably, the electron transport layer is SnO 2 A nanoparticle layer; the process for forming the electron transport layer specifically comprises the following steps:
deposition of SnO on conductive substrates by solution processes 2 The precursor solution is annealed to obtain an electron transport layer;
the annealing temperature is 120-180 ℃ and the annealing time is 20-50 min.
Preferably, the preparation method of the perovskite light absorption layer specifically comprises the following steps:
first, pre-synthesizing FAPbI by a hydroiodic acid-assisted reverse temperature crystallization method 3 A powder; then pre-synthesizing FAPbI 3 Redissolving the powder to obtain perovskite precursor solution; and finally, spin-coating the perovskite precursor solution on the electron transport layer, annealing and cooling to obtain the perovskite light absorption layer.
Preferably, the FAPbI is pre-synthesized by a hydroiodic acid-assisted reverse temperature crystallization method 3 The powder process is specifically as follows:
the molar ratio was set to 1: (0.5-1.5) FAI and PbI 2 Mixing with dimethoxy ethanol in the presence of hydroiodic acid to obtain clear solution; heating in oil bath at 110-130 deg.c to produce FAPbI 3 Filtering after powder; finally, drying in a vacuum oven at 140-160 ℃ for 20-40 min to obtain the pre-synthesized FAPbI 3 And (3) powder.
Preferably, the re-dissolving process is specifically as follows:
the mass ratio is (45-50): 1 pre-synthesis of FAPbI 3 The volume ratio of the powder to MACl is 1: after sufficiently dissolving dimethyl sulfoxide and dimethylformamide in (6-10), the mixture was filtered through a filter head having a diameter of 0.2 μm to 0.25 μm to obtain a perovskite precursor solution.
Preferably, the spin coating adopts a two-step spin coating method, wherein the first-step spin speed is 900 rpm-1100 rpm, the time is 4 s-6 s, the second-step spin speed is 4900 rpm-5100 rpm, the time is 18 s-22 s, and the anti-solvent diethyl ether is dripped when the spin is 5 s-7 s away from the end of the spin;
the annealing temperature is 120-150 ℃ and the annealing time is 10-40 min.
Preferably, the passivation layer is a PEAI thin film layer; the passivation layer is formed by the following steps:
PEAI is dissolved in IPA solution and spin-coated on the surface of the perovskite light absorption layer at a spin rate of 4900 rpm-5100 rpm to form a passivation layer.
Preferably, the hole transport layer is a thin layer of solid electrolyte Spiro-ome tad; the formation process of the hole transport layer specifically comprises the following steps:
spin-coating a hole transport layer solution on the passivation layer, wherein the spin-coating speed is 2000 rpm-400 rpm, the spin-coating time is 20 s-30 s, and the hole transport layer is formed after drying;
the hole transport layer solution consists of spiro-OMeTAD, a lithium bistrifluoromethylsulfonylimide stock solution, tributyl phosphate and chlorobenzene.
Preferably, the metal electrode layer is a gold electrode layer, and is prepared by vacuum evaporation.
The invention provides a perovskite solar cell preparation method based on a perovskite crystal re-dissolution strategy, which comprises the following steps: sequentially forming an electron transmission layer, a perovskite light absorption layer, a passivation layer, a hole transmission layer and a metal electrode layer on the surface of a conductive substrate to obtain a perovskite solar cell; the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product. Compared with the prior art, the preparation method provided by the invention has the advantage that the FAPbI is pre-synthesized by the aid of the hydroiodic acid 3 Powder, improvement of FAPbI 3 The quality of the powder, the optimized powder is used for redissolving to serve as a high-purity precursor of the deposited film, so that the crystallinity of the perovskite film is improved, fewer defects are generated, the phase distribution and the environmental stability are good, and the efficiency, the stability and the repeatability of the device are greatly improved.
In addition, the preparation method provided by the invention has the advantages of simple process, mild and easily controlled conditions and wide application prospect.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell based on a perovskite crystal re-dissolution strategy provided by the invention;
FIG. 2 shows FAPbI synthesis assisted by hydroiodic acid 3 Powder and direct synthesis of FAPbI 3 X-ray diffraction image of the powder;
FIG. 3 is an X-ray diffraction image of the films of comparative example 1 and example 2;
FIG. 4 shows the synthesis of FAPbI by the addition of various amounts of hydroiodic acid in examples 4 to 6 3 Perovskite solar cell prepared by powder redissolution and comparative example 2 direct synthesis of FAPbI 3 I-V test results of perovskite solar cell prepared by redissolving the powder.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a perovskite solar cell preparation method based on a perovskite crystal re-dissolution strategy, which comprises the following steps:
sequentially forming an electron transmission layer, a perovskite light absorption layer, a passivation layer, a hole transmission layer and a metal electrode layer on the surface of a conductive substrate to obtain a perovskite solar cell;
the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a perovskite solar cell based on a perovskite crystal re-dissolution strategy, which includes a substrate, an electron transport layer, a perovskite light absorption layer, a passivation layer, a hole transport layer, and a metal electrode sequentially arranged.
In the present invention, the conductive substrate is preferably ITO glass, FTO glass, AZO glass, or conductive PET, more preferably FTO conductive glass. The source of the conductive substrate is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. In the present invention, the conductive materialThe substrate is exemplified by FTO conductive glass, which is preferably cut to 2.5X2.5 cm before use 2 Cleaning with a detergent, respectively carrying out ultrasonic treatment in deionized water and ethanol for 15-25 min, then drying, and carrying out UV surface treatment for 20-30 min.
In the present invention, the electron transport layer is preferably SnO 2 A nanoparticle layer; the process of forming the electron transport layer is preferably specifically:
deposition of SnO on conductive substrates by solution processes 2 And (5) precursor solution, and annealing to obtain the electron transport layer.
In the present invention, the solution method is used for depositing SnO on the conductive substrate 2 The precursor solution is preferably prepared by the following steps:
configuration of SnO 2 Aqueous solution, deionized water and SnO 2 The colloid proportion is configured as (2-4): 1, stirring at room temperature to form uniform transparent SnO 2 An aqueous solution; the preparation method comprises the steps of placing a conductive substrate on a rotary bracket of a spin coater, fixing the conductive substrate by vacuum adsorption, and fixing SnO 2 The solution is dripped in the center of the conductive substrate and a spin coater is started, the spin coating speed is 3500 rpm-4500 rpm, and the spin coating time is 10 s-30 s;
more preferably:
configuration of SnO 2 Aqueous solution, deionized water and SnO 2 The colloid ratio was configured as 3:1, stirring at room temperature to form uniform transparent SnO 2 An aqueous solution; the preparation method comprises the steps of placing a conductive substrate on a rotary bracket of a spin coater, fixing the conductive substrate by vacuum adsorption, and fixing SnO 2 The solution was dropped in the center of the conductive substrate and the spin coater was started at 4000rpm for 20 seconds.
After the spin of the spin coater is stopped, the sample is moved to a heating table for annealing; the annealing temperature is preferably 120-180 ℃, more preferably 150 ℃, and the time is preferably 20-50 min, more preferably 30min.
Cooling to room temperature to obtain an electron transport layer; the SnO 2 The area relation between the precursor solution and the conductive substrate is preferably 120-180 mu L which corresponds to 2.5X2.5 cm 2 。
In the present invention, the calciumThe titanium ore light absorption layer is prepared by auxiliary synthesis of FAPbI by hydroiodic acid 3 And (5) redissolving the powder to obtain the product.
In the present invention, the preparation method of the perovskite light absorbing layer preferably specifically includes:
first, pre-synthesizing FAPbI by a hydroiodic acid-assisted reverse temperature crystallization method 3 A powder; then pre-synthesizing FAPbI 3 Redissolving the powder to obtain perovskite precursor solution; and finally, spin-coating the perovskite precursor solution on the electron transport layer, annealing and cooling to obtain the perovskite light absorption layer.
In the invention, FAPbI is pre-synthesized by the hydroiodic acid-assisted reverse temperature crystallization method 3 The process of the powder is preferably specifically:
the molar ratio was set to 1: (0.5-1.5) FAI and PbI 2 Mixing with dimethoxy ethanol in the presence of hydroiodic acid to obtain clear solution; heating in oil bath at 110-130 deg.c to produce FAPbI 3 Filtering after powder; finally, drying in a vacuum oven at 140-160 ℃ for 20-40 min to obtain the pre-synthesized FAPbI 3 A powder;
more preferably:
the molar ratio was set to 1: FAI and PbI of 1 2 Mixing with dimethoxy ethanol in the presence of hydroiodic acid to obtain clear solution; heating in 120 deg.C oil bath to obtain FAPbI 3 Filtering after powder; finally, drying for 30min in a vacuum oven at 150 ℃ to obtain the pre-synthesized FAPbI 3 And (3) powder.
In the preferred embodiment of the invention 0.6878g FAI and 1.8440g PbI are combined 2 And 10. Mu.L of hydroiodic acid were mixed with 5mL of dimethoxyethanol and stirred to give a clear solution.
In the present invention, the redissolution process is preferably specifically:
the mass ratio is (45-50): 1 pre-synthesis of FAPbI 3 The volume ratio of the powder to MACl is 1: fully dissolving dimethyl sulfoxide and dimethylformamide in the steps (6-10), and filtering by a filter head with the diameter of 0.2-0.25 mu m to obtain perovskite precursor solution;
more preferably:
the mass ratio is 47:1 pre-synthesis ofFAPbI 3 The volume ratio of the powder to MACl is 1:8, and then, sufficiently dissolving the perovskite precursor solution in dimethyl sulfoxide and dimethylformamide, and then, filtering the solution by a 0.22 mu m filter head to obtain a perovskite precursor solution.
In a preferred embodiment of the invention 663.0mg of pre-synthesized FAPbI is weighed 3 The powder, 14.1mg MACl was dissolved in 71. Mu.L of dimethyl sulfoxide (anhydrous DMSO, > 99.9%) and 568. Mu.L of dimethylformamide (anhydrous DMF, > 99.8%), and the mixture was placed on a stirring table and stirred for 1 to 3 hours to dissolve the powder sufficiently, and then the solution was filtered by a 0.22 μm filter head to obtain a perovskite precursor solution.
In the present invention, the spin coating preferably employs a two-step spin coating method, and the first-step spin speed is preferably 900rpm to 1100rpm, more preferably 1000rpm, and the time is preferably 4s to 6s, more preferably 5s; the rotation speed of the second step is preferably 4900rpm to 5100rpm, more preferably 5000rpm, and the time is preferably 18s to 22s, more preferably 20s; and dripping the anti-solvent diethyl ether when the rotation is finished for 5 to 7 seconds.
After the spin of the spin coater is stopped, the sample is moved to a heating table for annealing; the annealing temperature is preferably 120 to 150 ℃, more preferably 150 ℃, and the time is preferably 10 to 40min, more preferably 10min.
Cooling to room temperature to obtain a perovskite light absorption layer; the area relation between the perovskite precursor solution and the conductive substrate is preferably 70-1105 mu L which corresponds to 2.5X2.5 cm 2 The area relation between the antisolvent and the conductive substrate is preferably 600-1000 mu L corresponding to 2.5X2.5 cm 2 。
In the present invention, the passivation layer is preferably a PEAI thin film layer, and is prepared by spin-coating a passivating agent solution on the perovskite light absorbing layer; the passivation layer is preferably formed by the following steps:
dissolving PEAI in IPA solution, spin-coating the solution on the surface of the perovskite light absorption layer at a rotation rate of 4900 rpm-5100 rpm to form a passivation layer;
more preferably:
PEAI is dissolved in IPA solution and spin coated onto the surface of the perovskite light absorption layer at a spin rate of 5000rpm to form a passivation layer.
In the present invention, the concentration of the passivating agent is preferably 15 to 30mM, more preferably 20mM.
In the present invention, the area relationship between the PEAI solution and the conductive substrate is preferably 70 to 110. Mu.L corresponding to 2.5X2.5 cm 2 。
On the basis, PEAI/perovskite/SnO is obtained 2 FTO sample.
In the present invention, the hole transport layer is preferably a thin layer of solid electrolyte Spiro-ome tad, which is prepared by spin-coating a hole transport layer solution on the passivation layer; the hole transport layer is preferably formed by the following steps:
spin-coating a hole transport layer solution on the passivation layer, wherein the spin-coating speed is 2000 rpm-400 rpm, the spin-coating time is 20 s-30 s, and the hole transport layer is formed after drying;
more preferably:
and spin-coating a hole transport layer solution on the passivation layer, wherein the spin-coating speed is 4000rpm, the spin-coating time is 30s, and the hole transport layer is formed after drying.
In the present invention, the hole transport layer solution is preferably composed of a spiro-OMeTAD, a lithium bistrifluoromethylsulfonylimide stock solution, tributyl phosphate and chlorobenzene, more preferably composed of 50mg spiro-OMeTAD, 11.5. Mu.L of a lithium bistrifluoromethylsulfonylimide (Li-TFSI) stock solution (540 mg Li-TFSI in 1mL acetonitrile), 19.5. Mu.L of tributyl phosphate t-BP and 0.55mL chlorobenzene.
In the present invention, the area relationship between the hole transport layer solution and the conductive substrate is preferably 40 to 85. Mu.L corresponding to 2.5X2.5 cm 2 。
In the invention, the metal electrode layer is preferably a gold electrode layer and is prepared by vacuum evaporation; the thickness of the gold electrode layer is preferably 65 to 75nm.
On the basis, FTO/SnO is obtained 2 Perovskite/PEAI/Spiro-OMeTAD/Au Perovskite solar cell.
The invention provides a perovskite solar cell preparation method based on a perovskite crystal re-dissolution strategy, which comprises the following steps: sequentially forming an electron transport layer, a perovskite light absorption layer, a passivation layer, a hole transport layer and a metal electrode layer on the surface of the conductive substrate to obtain calciumA titanium ore solar cell; the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product. Compared with the prior art, the preparation method provided by the invention has the advantage that the FAPbI is pre-synthesized by the aid of the hydroiodic acid 3 Powder, improvement of FAPbI 3 The quality of the powder, the optimized powder is used for redissolving to serve as a high-purity precursor of the deposited film, so that the crystallinity of the perovskite film is improved, fewer defects are generated, the phase distribution and the environmental stability are good, and the efficiency, the stability and the repeatability of the device are greatly improved.
In addition, the preparation method provided by the invention has the advantages of simple process, mild and easily controlled conditions and wide application prospect.
In order to further illustrate the present invention, the following examples are provided.
Example 1
(1) FTO substrate preparation: cutting the FTO conductive glass into 2.5X2.5 cm pieces 2 And cleaning the FTO conductive glass with a detergent before use, respectively carrying out ultrasonic treatment in deionized water and ethanol for 20min, then drying, and carrying out UV surface treatment for 25min to obtain the FTO substrate.
(2) And (3) preparing an electron transport layer: 1mL SnO 2 Diluting the colloidal dispersion with deionized water for 3 times, and stirring at room temperature to obtain uniform transparent SnO 2 An aqueous solution; 120 mu L of SnO is taken 2 The solution was dropped in the center of the FTO substrate and the spin coater (4000 rpm,20 s) was started, and an electron transport layer was obtained after annealing at 150 c for 30min.
(3) Perovskite light absorption layer preparation:
3-1) mixing 0.6878g FAI with 1.8440g PbI 2 And 10 mu L of hydroiodic acid are mixed with 5mL of dimethoxy ethanol and stirred to obtain a clear solution, and the solution is heated in an oil bath at 120 ℃ to generate black FAPbI 3 Filtering the powder, and finally drying the powder in a vacuum oven at 150 ℃ for 30min to obtain perovskite powder;
3-2) weighing the pre-synthesized FAPbI with hydroiodic acid 3 Powder: 663.0mg, MACl:14.1mg of the mixture was dissolved in 71. Mu.L of dimethyl sulfoxide (anhydrous DMSO,. Gtoreq.99.9%) and 568. Mu.L of dimethylformamide (anhydrous DMF,. Gtoreq.99.8%) and placed in a reaction vesselStirring on a stirring table for 2 hours, and filtering the solution by using a 0.22 mu m filter head to obtain perovskite precursor solution;
3-3) 90. Mu.L of the perovskite precursor solution is taken and is dropped in the presence of SnO 2 And (3) preparing a perovskite layer on the FTO substrate of the electron transport layer by adopting a two-step spin coating method, wherein the first-step spin speed is 1000rpm,5s, the second-step spin speed is 5000rpm,20s, the anti-solvent diethyl ether is dripped when the spin is 5-7 s away from the end, after stopping rotating, the spin coater moves the sample to a heating table at 150 ℃, anneals for 10min, and cools to room temperature to obtain the perovskite light absorption layer.
The prepared device is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 And redissolving the powder to prepare the perovskite light absorption layer.
Example 2
(1) FTO substrate preparation: cutting the FTO conductive glass into 2.5X2.5 cm pieces 2 And cleaning the FTO conductive glass with a detergent before use, respectively carrying out ultrasonic treatment in deionized water and ethanol for 20min, then drying, and carrying out UV surface treatment for 25min to obtain the FTO substrate.
(2) And (3) preparing an electron transport layer: 1mL SnO 2 Diluting the colloidal dispersion with deionized water for 3 times, and stirring at room temperature to obtain uniform transparent SnO 2 An aqueous solution; 120 mu L of SnO is taken 2 The solution was dropped in the center of the FTO substrate and the spin coater (4000 rpm,20 s) was started, and an electron transport layer was obtained after annealing at 150 c for 30min.
(3) Perovskite light absorption layer preparation:
3-1) mixing 0.6878g FAI with 1.8440g PbI 2 And 20 mu L of hydroiodic acid are mixed with 5mL of dimethoxy ethanol and stirred to obtain a clear solution, and the solution is heated in an oil bath at 120 ℃ to generate black FAPbI 3 Filtering the powder, and finally drying the powder in a vacuum oven at 150 ℃ for 30min to obtain perovskite powder;
3-2) weighing the pre-synthesized FAPbI with hydroiodic acid 3 Powder: 663.0mg, MACl:14.1mg of the mixture was dissolved in 71. Mu.L of dimethyl sulfoxide (anhydrous DMSO,. Gtoreq.99.9%) and 568. Mu.L of dimethylformamide (anhydrous DMF,. Gtoreq.99.8%) and stirredStirring on a table for 2 hours to fully dissolve, and filtering the solution by using a 0.22 mu m filter head to obtain perovskite precursor solution;
3-3) 90. Mu.L of the perovskite precursor solution is taken and is dropped in the presence of SnO 2 And (3) preparing a perovskite layer on the FTO substrate of the electron transport layer by adopting a two-step spin coating method, wherein the first-step spin speed is 1000rpm,5s, the second-step spin speed is 5000rpm,20s, the anti-solvent diethyl ether is dripped when the spin is 5-7 s away from the end, after stopping rotating, the spin coater moves the sample to a heating table at 150 ℃, anneals for 10min, and cools to room temperature to obtain the perovskite light absorption layer.
The prepared device is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 And redissolving the powder to prepare the perovskite light absorption layer.
Example 3
(1) FTO substrate preparation: cutting the FTO conductive glass into 2.5X2.5 cm pieces 2 And cleaning the FTO conductive glass with a detergent before use, respectively carrying out ultrasonic treatment in deionized water and ethanol for 20min, then drying, and carrying out UV surface treatment for 25min to obtain the FTO substrate.
(2) And (3) preparing an electron transport layer: 1mL SnO 2 Diluting the colloidal dispersion with deionized water for 3 times, and stirring at room temperature to obtain uniform transparent SnO 2 An aqueous solution; 120 mu L of SnO is taken 2 The solution was dropped in the center of the FTO substrate and the spin coater (4000 rpm,20 s) was started, and an electron transport layer was obtained after annealing at 150 c for 30min.
(3) Perovskite light absorption layer preparation:
3-1) mixing 0.6878g FAI with 1.8440g PbI 2 And 30 mu L of hydroiodic acid are mixed with 5mL of dimethoxy ethanol and stirred to obtain a clear solution, and the solution is heated in an oil bath at 120 ℃ to generate black FAPbI 3 Filtering the powder, and finally drying the powder in a vacuum oven at 150 ℃ for 30min to obtain perovskite powder;
3-2) weighing the pre-synthesized FAPbI with hydroiodic acid 3 Powder: 663.0mg, MACl:14.1mg of the mixture was dissolved in 71. Mu.L of dimethyl sulfoxide (anhydrous DMSO,. Gtoreq.99.9%) and 568. Mu.L of dimethylformamide (anhydrous DMF,. Gtoreq.99.8%) and placed on a stirring tableStirring for 2 hours to fully dissolve, and filtering the solution by using a filter head with the thickness of 0.22 mu m to obtain perovskite precursor solution;
3-3) 90. Mu.L of the perovskite precursor solution is taken and is dropped in the presence of SnO 2 And (3) preparing a perovskite layer on the FTO substrate of the electron transport layer by adopting a two-step spin coating method, wherein the first-step spin speed is 1000rpm,5s, the second-step spin speed is 5000rpm,20s, the anti-solvent diethyl ether is dripped when the spin is 5-7 s away from the end, after stopping rotating, the spin coater moves the sample to a heating table at 150 ℃, anneals for 10min, and cools to room temperature to obtain the perovskite light absorption layer.
The prepared device is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 And redissolving the powder to prepare the perovskite light absorption layer.
Comparative example 1
(1) FTO substrate preparation: cutting the FTO conductive glass into 2.5X2.5 cm pieces 2 And cleaning the FTO conductive glass with a detergent before use, respectively carrying out ultrasonic treatment in deionized water and ethanol for 20min, then drying, and carrying out UV surface treatment for 25min to obtain the FTO substrate.
(2) And (3) preparing an electron transport layer: 1mL SnO 2 Diluting the colloidal dispersion with deionized water for 3 times, and stirring at room temperature to obtain uniform transparent SnO 2 An aqueous solution; 120 mu L of SnO is taken 2 The solution was dropped in the center of the FTO substrate and the spin coater (4000 rpm,20 s) was started, and an electron transport layer was obtained after annealing at 150 c for 30min.
(3) Perovskite light absorption layer preparation:
3-1) mixing 0.6878g FAI with 1.8440g PbI 2 Mixing with 5mL dimethoxy ethanol, stirring to obtain clear solution, and heating the solution in 120 deg.C oil bath to obtain black FAPbI 3 Filtering the powder, and finally drying the powder in a vacuum oven at 150 ℃ for 30min to obtain perovskite powder;
3-2) weighing the pre-synthesized FAPbI with hydroiodic acid 3 Powder: 663.0mg, MACl:14.1mg of the mixture was dissolved in 71. Mu.L of dimethyl sulfoxide (anhydrous DMSO, > 99.9%) and 568. Mu.L of dimethylformamide (anhydrous DMF, > 99.8%), and the mixture was stirred on a stirring table for 2 hours to dissolve the mixture sufficiently,filtering the solution by using a 0.22 mu m filter head to obtain perovskite precursor solution;
3-3) 90. Mu.L of the perovskite precursor solution is taken and is dropped in the presence of SnO 2 And (3) preparing a perovskite layer on the FTO substrate of the electron transport layer by adopting a two-step spin coating method, wherein the first-step spin speed is 1000rpm,5s, the second-step spin speed is 5000rpm,20s, the anti-solvent diethyl ether is dripped when the spin is 5-7 s away from the end, after stopping rotating, the spin coater moves the sample to a heating table at 150 ℃, anneals for 10min, and cools to room temperature to obtain the perovskite light absorption layer.
The prepared device is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, pre-synthesis of FAPbI 3 And redissolving the powder to prepare the perovskite light absorption layer.
FTO/SnO provided with perovskite light absorbing layer prepared in comparative examples 1 to 3 and comparative example 1 2 Comparing the film structure of perovskite light absorption layer, exploring the effect of hydroiodic acid:
the invention for example 2 Pre-Synthesis of FAPbI with the aid of hydroiodic acid 3 Pre-Synthesis of FAPbI from powder and comparative example 1 without added hydroiodic acid 3 The powder was subjected to an X-ray diffraction test, and the results obtained are shown in fig. 2. From the figure, it can be seen that the crystallization peak did not change significantly, indicating that the major structure of the two powders was substantially similar.
The invention for example 2 Pre-Synthesis of FAPbI with the aid of hydroiodic acid 3 Perovskite thin film obtained by powder redissolving and comparative example 1 presynthesized FAPbI without added hydroiodic acid 3 The perovskite thin film obtained by redissolving the powder was subjected to an X-ray diffraction test, and the result was shown in FIG. 3. From the figure, it is clear that the distinct crystallization peaks, marked by characteristic peaks, correspond to FAPbI respectively 3 (001), (002) crystal face of (a) FAPbI is synthesized by hydroiodic acid assistance 3 The perovskite film prepared by redissolving the powder is pre-synthesized into FAPbI by comparing with the film prepared by pre-synthesizing FAPbI without adding hydroiodic acid 3 Compared with the perovskite film prepared by redissolving the powder, the characteristic peak of the perovskite film is obviously enhanced, which shows that the FAPbI is synthesized by the auxiliary of hydroiodic acid 3 The crystallinity of the perovskite thin film prepared by redissolving the powder is enhanced.
Example 4
On the basis of the device prepared in example 1, a perovskite solar cell was further prepared:
(4) Preparing a passivation layer: PEAI was dissolved in IPA solution (20 mM) and sufficiently dissolved, and then spin-coated onto the perovskite surface obtained in step (3) of example 1 at a spin rate of 5000 rpm.
(5) Hole transport layer preparation: the hole transport layer solution consisted of 50mg of spiro-OMeTAD, 11.5. Mu.L of lithium bis (trifluoromethylsulfonyl) imide (Li-TFSI) stock solution (540 mg Li-TFSI in 1mL acetonitrile), 19.5. Mu.L of tributyl phosphate t-BP, and 0.55mL of chlorobenzene; in the process of preparing the hole transport layer, spin coating was performed at 4000rpm for 30s, and then the device without electrode was put in a dry oven (25 ℃ C., 1% humidity) to oxidize Spiro-OMeTAD overnight to enhance conductivity.
(6) Vapor deposition electrode: vacuum coater was used at 1X 10 -5 Gold with a particle size of 65-75 nm is evaporated under Pa to serve as an electrode.
The prepared solar cell structure is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 A perovskite light absorption layer prepared by redissolving the powder, a passivation layer, a hole transport layer (spiro-OMeTAD) and a gold electrode layer.
Example 5
On the basis of the device prepared in example 2, a perovskite solar cell was further prepared:
(4) Preparing a passivation layer: PEAI was dissolved in IPA solution (20 mM) and sufficiently dissolved, and then spin-coated onto the perovskite surface obtained in step (3) of example 2 at a spin rate of 5000 rpm.
(5) Hole transport layer preparation: the hole transport layer solution consisted of 50mg of spiro-OMeTAD, 11.5. Mu.L of lithium bis (trifluoromethylsulfonyl) imide (Li-TFSI) stock solution (540 mg Li-TFSI in 1mL acetonitrile), 19.5. Mu.L of tributyl phosphate t-BP, and 0.55mL of chlorobenzene; in the process of preparing the hole transport layer, spin coating was performed at 4000rpm for 30s, and then the device without electrode was put in a dry oven (25 ℃ C., 1% humidity) to oxidize Spiro-OMeTAD overnight to enhance conductivity.
(6) Vapor deposition electrode: by vacuum platingFilm machine at 1×10 -5 Gold with a particle size of 65-75 nm is evaporated under Pa to serve as an electrode.
The prepared solar cell structure is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 A perovskite light absorption layer prepared by redissolving the powder, a passivation layer, a hole transport layer (spiro-OMeTAD) and a gold electrode layer.
Example 6
On the basis of the device prepared in example 3, a perovskite solar cell was further prepared:
(4) Preparing a passivation layer: PEAI was dissolved in IPA solution (20 mM) and sufficiently dissolved, and then spin-coated onto the perovskite surface obtained in step (3) of example 3 at a spin rate of 5000 rpm.
(5) Hole transport layer preparation: the hole transport layer solution consisted of 50mg of spiro-OMeTAD, 11.5. Mu.L of lithium bis (trifluoromethylsulfonyl) imide (Li-TFSI) stock solution (540 mg Li-TFSI in 1mL acetonitrile), 19.5. Mu.L of tributyl phosphate t-BP, and 0.55mL of chlorobenzene; in the process of preparing the hole transport layer, spin coating was performed at 4000rpm for 30s, and then the device without electrode was put in a dry oven (25 ℃ C., 1% humidity) to oxidize Spiro-OMeTAD overnight to enhance conductivity.
(6) Vapor deposition electrode: vacuum coater was used at 1X 10 -5 Gold with a particle size of 65-75 nm is evaporated under Pa to serve as an electrode.
The prepared solar cell structure is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, FAPbI pre-synthesis assisted by hydroiodic acid 3 A perovskite light absorption layer prepared by redissolving the powder, a passivation layer, a hole transport layer (spiro-OMeTAD) and a gold electrode layer.
Comparative example 2
On the basis of the device prepared in comparative example 1, a perovskite solar cell was further prepared:
(4) Preparing a passivation layer: PEAI was dissolved in IPA solution (20 mM) and sufficiently dissolved, and spin-coated onto the perovskite surface obtained in step (3) of comparative example 1 at a spin rate of 5000 rpm.
(5) Hole transport layer preparation: the hole transport layer solution consisted of 50mg of spiro-OMeTAD, 11.5. Mu.L of lithium bis (trifluoromethylsulfonyl) imide (Li-TFSI) stock solution (540 mg Li-TFSI in 1mL acetonitrile), 19.5. Mu.L of tributyl phosphate t-BP, and 0.55mL of chlorobenzene; in the process of preparing the hole transport layer, spin coating was performed at 4000rpm for 30s, and then the device without electrode was put in a dry oven (25 ℃ C., 1% humidity) to oxidize Spiro-OMeTAD overnight to enhance conductivity.
(6) Vapor deposition electrode: vacuum coater was used at 1X 10 -5 Gold with a particle size of 65-75 nm is evaporated under Pa to serve as an electrode.
The prepared solar cell structure is an FTO substrate and SnO substrate from bottom to top 2 Electron transport layer, pre-synthesis of FAPbI 3 A perovskite light absorption layer prepared by redissolving the powder, a passivation layer, a hole transport layer (spiro-OMeTAD) and a gold electrode layer.
Comparison of perovskite solar cells prepared in examples 4 to 6 and comparative example 2:
FIG. 4 and Table 1 are diagrams of the pre-synthesis of FAPbI with the addition of various amounts of hydroiodic acid 3 Perovskite solar cell obtained by redissolving the powder was prepared under standard AM1.5G (100 mW. Cm -2 ) Under illumination, the J-V curve of the perovskite solar cell and corresponding photovoltaic parameters are recorded. By optimizing FAPbI 3 The use amount of hydroiodic acid in the powder preparation process achieves enhanced photoelectric conversion efficiency.
Pre-synthesis of FAPbI by hydroiodic acid-assisted reverse temperature crystallization 3 The current density (Jsc) of the perovskite solar cell prepared by redissolving the powder is 24.04 mA.cm -2 Lifting to 25.22 mA.cm -2 The open-circuit voltage (Voc) is increased from 1.16V to 1.19V, the photoelectric conversion efficiency is increased from 22.45% to 24.68%, the Fill Factor (FF) is increased from 80.42% to 82.16%, and the photoelectric performance is obviously improved; in conclusion, FAPbI is pre-synthesized with the aid of hydroiodic acid 3 The powder redissolved to produce the great advantage of efficient, stable, renewable, low cost perovskite solar cells.
TABLE 1 auxiliary Synthesis of FAPbI by hydroiodic acid 3 Influence of the powder on the solar cell performance
From the above examples, the present invention improves FAPbI by hydroiodic acid-assisted reverse temperature crystallization 3 Powder quality, which is used as a high purity precursor for depositing perovskite thin films, the perovskite thin films have improved crystallinity, fewer defects, good phase distribution and environmental stability, and improved device efficiency and stability.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The preparation method of the perovskite solar cell based on the perovskite crystal re-dissolution strategy is characterized by comprising the following steps of:
sequentially forming an electron transmission layer, a perovskite light absorption layer, a passivation layer, a hole transmission layer and a metal electrode layer on the surface of a conductive substrate to obtain a perovskite solar cell;
the perovskite light absorption layer is prepared by synthesizing FAPbI assisted by hydroiodic acid 3 And (5) redissolving the powder to obtain the product.
2. The method of claim 1, wherein the conductive substrate is ITO glass, FTO glass, AZO glass, or conductive PET.
3. The method of claim 1, wherein the electron transport layer is SnO 2 A nanoparticle layer; the process for forming the electron transport layer specifically comprises the following steps:
deposition of SnO on conductive substrates by solution processes 2 The precursor solution is annealed to obtain an electron transport layer;
the annealing temperature is 120-180 ℃ and the annealing time is 20-50 min.
4. The preparation method according to claim 1, wherein the preparation method of the perovskite light absorbing layer specifically comprises:
first, pre-synthesizing FAPbI by a hydroiodic acid-assisted reverse temperature crystallization method 3 A powder; then pre-synthesizing FAPbI 3 Redissolving the powder to obtain perovskite precursor solution; and finally, spin-coating the perovskite precursor solution on the electron transport layer, annealing and cooling to obtain the perovskite light absorption layer.
5. The method according to claim 4, wherein FAPbI is synthesized by hydroiodic acid-assisted reverse-temperature crystallization 3 The powder process is specifically as follows:
the molar ratio was set to 1: (0.5-1.5) FAI and PbI 2 Mixing with dimethoxy ethanol in the presence of hydroiodic acid to obtain clear solution; heating in oil bath at 110-130 deg.c to produce FAPbI 3 Filtering after powder; finally, drying in a vacuum oven at 140-160 ℃ for 20-40 min to obtain the pre-synthesized FAPbI 3 And (3) powder.
6. The method according to claim 4, wherein the re-dissolving process is specifically:
the mass ratio is (45-50): 1 pre-synthesis of FAPbI 3 The volume ratio of the powder to MACl is 1: after sufficiently dissolving dimethyl sulfoxide and dimethylformamide in (6-10), the mixture was filtered through a filter head having a diameter of 0.2 μm to 0.25 μm to obtain a perovskite precursor solution.
7. The method according to claim 4, wherein the spin coating is a two-step spin coating method, the first step spin speed is 900rpm to 1100rpm, the time is 4s to 6s, the second step spin speed is 4900rpm to 5100rpm, the time is 18s to 22s, and the anti-solvent diethyl ether is added dropwise from 5s to 7s from the end of the spin;
the annealing temperature is 120-150 ℃ and the annealing time is 10-40 min.
8. The method of claim 1, wherein the passivation layer is a PEAI thin film layer; the passivation layer is formed by the following steps:
PEAI is dissolved in IPA solution and spin-coated on the surface of the perovskite light absorption layer at a spin rate of 4900 rpm-5100 rpm to form a passivation layer.
9. The method of claim 1, wherein the hole transport layer is a thin layer of solid electrolyte spira-ome tad; the formation process of the hole transport layer specifically comprises the following steps:
spin-coating a hole transport layer solution on the passivation layer, wherein the spin-coating speed is 2000 rpm-400 rpm, the spin-coating time is 20 s-30 s, and the hole transport layer is formed after drying;
the hole transport layer solution consists of spiro-OMeTAD, a lithium bistrifluoromethylsulfonylimide stock solution, tributyl phosphate and chlorobenzene.
10. The method of claim 1, wherein the metal electrode layer is a gold electrode layer, and is prepared by vacuum evaporation.
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