CN117012734B - Sensor packaging structure - Google Patents
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- CN117012734B CN117012734B CN202311083383.9A CN202311083383A CN117012734B CN 117012734 B CN117012734 B CN 117012734B CN 202311083383 A CN202311083383 A CN 202311083383A CN 117012734 B CN117012734 B CN 117012734B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 55
- 238000012545 processing Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000005192 partition Methods 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 5
- 239000011358 absorbing material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000009529 body temperature measurement Methods 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
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- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
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- 238000009501 film coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
Abstract
The embodiment of the invention discloses a sensor packaging structure, which comprises: the heat conducting device comprises a substrate, wherein a first heat conducting layer and a second heat conducting layer are arranged on the upper surface of the substrate, the first heat conducting layer and the second heat conducting layer are arranged at intervals, a third heat conducting layer is arranged on the lower surface of the substrate, at least one heat conducting column is formed on the substrate, the heat conducting column penetrates through the substrate, and the heat conducting column is communicated with the first heat conducting layer and the third heat conducting layer; the signal processing chip is positioned on the first heat conduction layer; a thermopile chip located on the second heat conductive layer; and the packaging shell is positioned on the upper surface of the substrate and packages the thermopile chip and the signal processing chip. The heat of the signal processing chip during working is mainly conducted out through the low thermal resistance path formed by the first heat conduction layer, the heat conduction column and the third heat conduction layer, so that the thermal interference to the thermopile chip is reduced, and the infrared temperature measurement precision of the thermopile chip is improved.
Description
Technical Field
The invention relates to the field of sensor manufacturing, in particular to a packaging structure of a sensor.
Background
With the rapid development of electronic devices, the size requirements of the electronic devices are becoming more and more stringent. The analog infrared sensor application circuit needs to be provided with low Wen Piaoyun amplifier, A D conversion circuit, reference power supply, M C U and other signal processing circuits, and the formed infrared temperature measurement module is large in size and needs professional calibration before use. The digital infrared sensor integrates the M E M S thermopile, the operational amplifier circuit, the A D conversion circuit, the reference power supply, the MC U and other signal processing circuits into a unified chip package, and performs pre-calibration, provides a digital interface such as I2C, SPI and the like for the outside of the chip, directly outputs the measured temperature value, and can reduce the package size. However, since the me M S thermopile infrared sensor measures the absorbed infrared radiation energy using electromotive force generated by the temperature difference between the cold and hot ends of the thermopile based on the seebeck principle, the me M S thermopile is sensitive to external thermal interference. The signal processing circuit in the digital infrared sensor can generate heat when working, and the temperature measurement error of the M E M S infrared thermopile can be increased due to thermal interference caused by small-size packaging, so that the temperature measurement is inaccurate.
Disclosure of Invention
Aiming at the problems faced by the background technology, the invention aims to provide a digital infrared sensor packaging structure, which is characterized in that the heat generated by a signal processing chip during working is conducted out of the packaging structure through a low thermal resistance path formed by a first heat conduction layer, a heat conduction column and a third heat conduction layer, so that the thermal interference of the signal processing chip to a thermopile chip is reduced, and the accuracy of the target temperature to be detected output by an infrared sensor is improved.
In order to achieve the above purpose, the invention adopts the following technical means:
A sensor package structure, comprising: the heat conducting device comprises a substrate, wherein a first heat conducting layer and a second heat conducting layer are arranged on the upper surface of the substrate, the first heat conducting layer and the second heat conducting layer are arranged at intervals, a third heat conducting layer is arranged on the lower surface of the substrate, at least one heat conducting column is formed on the substrate, the heat conducting column penetrates through the substrate, and the heat conducting column is communicated with the first heat conducting layer and the third heat conducting layer; the signal processing chip is positioned on the first heat conduction layer; a thermopile chip located on the second heat conductive layer; and the packaging shell is positioned on the upper surface of the substrate and packages the thermopile chip and the signal processing chip.
Further, the first heat conducting layer is spaced apart from the periphery of the second heat conducting layer, and the package housing is located on the first heat conducting layer.
Further, a partition is arranged in the packaging shell, the partition divides the packaging structure into a first cavity and a second cavity, the signal processing chip is located in the first cavity, the thermopile chip is located in the second cavity, and an opening is formed between the partition and the substrate, so that the first cavity is communicated with the second cavity.
Further, the partition surrounds the upper portion of the first cavity, is connected with the first heat conducting layer, and is coated with an absorbing material on one surface of the partition facing the first cavity for absorbing heat radiation.
Further, the substrate is provided with a plurality of through holes penetrating through the substrate, the plurality of heat conducting columns are located in the through holes, and the plurality of heat conducting columns are arranged at intervals.
Further, the packaging shell comprises a first packaging shell and a second packaging shell, the first heat conduction layer and the second heat conduction layer are arranged in parallel, the first packaging shell is located on the first heat conduction layer and packages the signal processing chip, and the second packaging shell is located on the second heat conduction layer and packages the thermopile chip.
Further, a heat conducting piece is arranged on the upper surface of the signal processing chip, and the heat conducting piece is connected with the first packaging shell.
Further, the height of the first packaging shell is lower than that of the second packaging shell.
Further, a slot is formed in the substrate between the first heat conduction layer and the second heat conduction layer, and the slot is communicated with the inner cavity of the packaging structure.
Further, the first heat conduction layer, the heat conduction column and the third heat conduction layer are integrally formed.
Compared with the prior art, the digital infrared sensor packaging structure provided by the application has the advantages that the signal processing chip is arranged on the first heat conduction layer, the thermopile chip is arranged on the second heat conduction layer, and the first heat conduction layer and the second heat conduction layer are arranged at intervals, so that the thermal resistance between the first heat conduction layer and the second heat conduction layer is improved, the thermopile chip is prevented from being influenced by heat conduction during the working of the signal processing chip, the thermal interference of the signal processing chip on the thermopile chip is reduced, and the accuracy of the target temperature to be detected, which is output by the infrared sensor, is improved. And the substrate between the first heat conduction layer and the second heat conduction layer is further provided with the grooves, so that larger thermal resistance is formed between the area where the signal processing chip is located and the area where the thermopile chip is located, and the thermal interference of the signal processing chip to the thermopile chip is further reduced. Meanwhile, the first heat conducting layer where the signal processing chip is located is interconnected with the heat conducting columns, the third heat conducting layer and other high heat conductivity coefficient metals to form a low heat resistance path, and heat generated during operation of the signal processing chip is conducted to a heat dissipation copper thin or other heat dissipation structures on the substrate through the low heat resistance path of the first heat conducting layer, the heat conducting columns and the third heat conducting layer, so that main heat (7 0% -9 5%) is conducted out of the packaging structure. Therefore, the heat transferred to the thermopile chip is little, the thermal interference to the thermopile chip is reduced, and the infrared temperature measurement accuracy of the thermopile chip is improved. Meanwhile, the thermopile chip and the N T C are arranged on the same second heat conduction layer, and the second heat conduction layer is used as a metal heat conduction layer to enable heat between the thermopile chip and the N T C to be more balanced, so that the thermal resistance between the thermopile chip and the N T C is reduced, errors between ambient temperatures measured by the thermopile chip and the N T C are reduced, and accuracy of target temperature to be measured output by an infrared sensor is greatly improved.
Further, the digital infrared sensor packaging structure provided by the application enables the signal processing chip and the thermopile chip to be isolated and packaged in the first cavity and the second cavity respectively through the separating piece or enables the signal processing chip and the thermopile chip to be further isolated through packaging the signal processing chip and the thermopile chip in the first packaging shell and the second packaging shell which are mutually independent respectively, so that heat exchange between the signal processing chip and the thermopile chip is reduced, and heat interference of the signal processing chip to the thermopile chip is reduced. When the signal processing chip and the thermopile chip are respectively packaged in the first packaging shell and the second packaging shell which are mutually independent, the first packaging shell and the second packaging shell are arranged at intervals, so that the signal processing chip and the thermopile chip are isolated. And the heat conducting piece is simultaneously contacted with the first packaging shell and the signal processing chip, heat generated by the signal processing chip during operation is conducted to the first packaging shell through the heat conducting piece, and then the first packaging shell is conducted out of the packaging structure through a low thermal resistance path formed by the first heat conducting layer, the heat conducting column and the third heat conducting layer. The digital infrared sensor packaging structure provided by the application is provided with a plurality of low thermal resistance paths, so that main heat (7 0% -9 5% or more) generated by the signal processing chip during working can be conducted out of the packaging structure, the thermal interference of the signal processing chip on the thermopile chip is effectively avoided, and the accuracy of the target temperature to be detected output by the infrared sensor is ensured.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Wherein:
FIG. 1 is a schematic diagram of a sensor package structure according to the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a bottom view of FIG. 1;
FIG. 4 is a schematic diagram of another sensor package structure according to the present invention;
FIG. 5 is a schematic diagram of a sensor package structure according to another embodiment of the present invention;
FIG. 6 is a schematic diagram of a sensor package structure according to another embodiment of the present invention;
Fig. 7 is a top view of fig. 6.
Reference numerals of the specific embodiments illustrate:
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1 to 3, the sensor package structure provided by the present application is a digital infrared temperature sensor, which includes: a substrate 1, a signal processing chip 2, a thermopile chip 3, an NTC 4, and a package case 5. In this embodiment, the substrate 1 may be a resin substrate, a plastic substrate, a ceramic substrate, alumina or aluminum nitride or other substrates, and the substrate 1 has a certain hardness, and has high insulation and heat insulation properties, so that the chip bonding or bonding process is relatively convenient, and the production efficiency can be effectively improved. The circuit, the signal PAD, the substrate PAD, the DIE PAD and other electrical connectors are arranged on the substrate 1, the thermopile chip 3 and the signal processing chip 2 are electrically connected through the electrical connectors on the substrate 1, and a plurality of structural PADs 15 can be formed on the substrate 1, so that the reliability of a welding surface is enhanced. The signal processing chip 2 is electrically connected with the thermopile chip 3, for example, gold wires may be used to connect the thermopile chip 3 with the signal processing chip 2, so as to reduce resistance and improve detection accuracy of the thermopile chip.
The upper surface of the substrate 1 is provided with a first heat conduction layer 11 and a second heat conduction layer 12, and the first heat conduction layer 11 and the second heat conduction layer 12 are arranged on the substrate 1 in a film coating or film plating mode. The signal processing chip 2 is located on the first heat conducting layer 11, the thermopile chip 3 and the NTC 4 are located on the second heat conducting layer 12, and the first heat conducting layer 11 and the second heat conducting layer 12 are arranged at intervals, so that the thermal resistance between the first heat conducting layer 11 and the second heat conducting layer 12 is improved, the heat conduction influence of the signal processing chip 2 on the thermopile chip 3 can be avoided, and the interference is reduced. Further, the substrate 1 between the first heat conducting layer 11 and the second heat conducting layer 12 is provided with a slot 17, the slot 17 is communicated with the inner cavity of the packaging structure, and the slot 17 may be V-shaped or rectangular, so as to further improve the thermal resistance of the substrate 1 region where the first heat conducting layer 11 is located and the substrate 1 region where the second heat conducting layer 12 is located, and further reduce the thermal interference of the signal processing chip on the thermopile chip. As shown in fig. 3, the lower surface of the substrate 1 is provided with a third heat conducting layer 13 and a plurality of signal traces 16, the third heat conducting layer 13 enhances the heat conducting efficiency of the signal processing chip 2, and the signal traces 16 are used for increasing the heat resistance and reducing the thermal interference of the signal processing chip 2 on the thermopile chip 3. Preferably, the first heat conducting layer 11, the second heat conducting layer 12 and the third heat conducting layer 13 are all metal heat conducting layers, and are made of metal materials, so that the heat conducting effect is achieved.
The signal processing chip 2 is located on the first heat conductive layer 11, and the thermopile chip 3 and the nc 4 are located on the second heat conductive layer 12. In an embodiment, the signal processing chip 2 is fixed on the first heat conducting layer 11 by a silver paste or a die bonding film with good heat conduction, and the nc 4 and the thermopile chip 3 are also fixed on the second heat conducting layer 12 by a silver paste or a die bonding film with good heat conduction, in another embodiment, the signal processing chip 2, the nc 4 and the thermopile chip 3 may be fixed on the substrate 1 by soldering or conductive paste or other manners, which is not limited to the examples listed herein.
An infrared receiving surface is arranged on one side, far away from the substrate 1, of the thermopile chip 3, near the near-infrared filter window 53, and infrared energy incident on the infrared receiving surface is absorbed by utilizing a thermoelectromotive effect (Seebeck effect) and an electric signal is generated and output. The nT C4 is used for measuring the ambient temperature of the thermopile chip 3, namely the cold end temperature of the thermopile chip 3. The signal processing chip 2 is electrically connected with the thermopile chip 3, and the signal processing chip 2 converts the analog signal output by the thermopile chip 3 to generate a digital signal, so that the digital infrared temperature sensor can directly output the digital signal, and the use is convenient. The signal processing chip 2 can calibrate the temperature signal detected by the thermopile chip 3 according to the environmental temperature signal obtained by the N T C4, so that the measurement accuracy is improved. The thermopile chip 3 and the nT C4 are simultaneously located on the second heat conduction layer 12, and the second heat conduction layer 12 is used as a metal heat conduction layer to enable heat between the thermopile chip 3 and the nT C4 to be more balanced, so that the thermal resistance between the thermopile chip 3 and the nT C4 is reduced, errors between ambient temperatures measured by the thermopile chip 3 and the nT C4 are reduced, and accuracy of a target temperature to be measured output by the infrared sensor is greatly improved.
In an embodiment, as shown in fig. 4, a through hole is formed on the substrate 1, preferably, the through hole is formed by mechanical drilling or laser drilling, and the through hole may be "] [" or ") (" or the like in shape from the cross section of the side surface of the substrate 1. The substrate 1 is provided with a through hole, and compared with the substrate 1 provided with a plurality of through holes, the through hole is provided with a space enough to make the aperture of the heat conducting column 14 as large as possible, so that the heat dissipation effect is better, and the through hole is provided with a plurality of through holes, which is relatively simple and convenient to form. The through hole is provided with a heat conducting post 14, preferably, the heat conducting post 14 is a solid metal heat conducting post 14, the heat conducting post 14 has a very good heat conducting function, and is mainly formed by adopting an electroplating mode and matching with the through hole. The heat conducting post 14 may be used to communicate the first heat conducting layer 11 with the second heat conducting layer 12, and the heat conducting post 14, the first heat conducting layer 11, and the third heat conducting layer 13 may be integrally formed, where the heat conducting post may be made of the same metal material, or may be integrally formed by respectively using different metal materials, so as to have an optimal bonding strength; therefore, the step of inserting the heat conducting copper column can be simplified, the manufacturing cost can be reduced, and the forming process can be simplified.
The first heat conductive layer 11 is connected to the third heat conductive layer 13 by the heat conductive pillars 14, and the first heat conductive layer 11, the heat conductive pillars 14, and the third heat conductive layer 13 form a low thermal resistance path due to the high thermal conductivity metal interconnection. Therefore, the heat generated during the operation of the signal processing chip 2 is conducted to the heat dissipation copper thin or other heat dissipation structures conducted to the substrate 1 through the low thermal resistance path formed by the first heat conduction layer 11, the heat conduction columns 14 and the third heat conduction layer 13, so that the heat of the signal processing chip 2 can be rapidly discharged out of the packaging structure, a very good heat dissipation effect is achieved, a large amount of heat is prevented from being accumulated in the packaging structure, the degradation of the thermopile chip 3 is avoided, the service life and the temperature resistance of the thermopile chip 3 are effectively improved, and the heat transferred to the thermopile chip is reduced, so that the thermal interference to the thermopile chip is reduced, and the infrared temperature measurement precision of the thermopile chip is improved.
Preferably, the shape and size of the upper bottom surface of the heat conducting post 14 may be set according to the shape and size of the signal processing chip 2, and in order to optimize the heat dissipation effect, the shape and size of the upper bottom surface of the heat conducting post 14 may be matched with the shape and size of the first heat conducting layer 11 and the signal processing chip 2, so that the heat dissipation path is increased and the heat dissipation speed is faster. The first heat conductive layer 11 is fully contacted with the signal processing chip 2, which is more favorable for heat transfer.
In another embodiment, as shown in fig. 1, a plurality of through holes are formed on the substrate 1, the through holes are arranged on the substrate 1 at intervals, a solid heat conducting post 14 is disposed on each through hole, and a plurality of heat conducting posts 14 penetrate through the substrate 1 and communicate the first heat conducting layer 11 with the third heat conducting layer 1 3. Compared with the substrate 1 directly provided with one large through hole, the substrate 1 is provided with a plurality of small through holes through Kong Cafen, the aperture of the through holes is small, and the solid heat conducting column 14 is easy to manufacture and fix. And compared with the through hole with one large aperture which is directly formed on the substrate 1, the through hole with a plurality of small apertures is formed on the substrate 1, so that the substrate 1 is not easy to break, and the strength of the substrate 1 is improved. The through holes are arranged on the substrate 1 at intervals, and a plurality of heat dissipation paths can be provided, so that the heat dissipation effect is ensured.
The substrate 1 and the packaging shell 5 together enclose a closed structure, the packaging shell 5 is located on the upper surface of the substrate 1 and is used for packaging the thermopile chip 3, the nT 4 and the signal processing chip 2, and an infrared filter window 53 is arranged on the packaging shell 5 above the sensitive area of the thermopile chip 3.
In an embodiment, the number of the package cases 5 is one, the first heat conductive layers 11 are arranged at intervals on the periphery of the second heat conductive layer 12, the package cases 5 are fixed on the edge of the first heat conductive layer 11, and the inner wall of the package cases 5 is a low emissivity surface. As shown in fig. 5, a spacer 54 is provided inside the package case 5 for shielding the heat radiation of the signal processing chip 2, and preferably, the spacer 54 is a metal member. The separation member 54 separates the packaging structure into a first cavity A and a second cavity B, the signal processing chip 2 is located in the first cavity A, the thermopile chip 3 is located in the second cavity B, the signal processing chip and the thermopile chip are further separated by the separation member 54, heat exchange between the signal processing chip and the thermopile chip is reduced, and thermal interference of the signal processing chip to the thermopile chip is reduced. Further, the partition 54 surrounds the first cavity a, specifically, one end of the partition 54 is connected to the first heat conducting layer 11, the other end of the partition 54 is close to the substrate 1, and an opening 541 is provided between the other end of the partition 54 and the substrate 1. One surface of the partition 54 facing the first cavity a is coated with an absorbing material for absorbing heat radiation in the first cavity a, so as to reduce thermal interference of the first cavity a on the thermopile chip 3.
Meanwhile, the separator 54 transfers heat to the first heat conductive layer 11 and then to the outside of the substrate 1 through a low thermal resistance path formed by the first heat conductive layer 11, the heat conductive posts 14, and the third heat conductive layer 13. The opening 54 1 enables the first cavity a and the second cavity B to be communicated, so that air pressure balance between the first cavity a and the second cavity B is ensured, and explosion of the packaging structure due to large pressure difference is prevented.
In another embodiment, as shown in fig. 6 to 7, the first heat conductive layer 11 and the second heat conductive layer 12 are arranged in parallel, the number of the package cases 5 is two, the package cases 5 include a first package case 51 and a second package case 52, the first package case 51 is located on the first heat conductive layer 11 and encapsulates the signal processing chip 2, and the second package case 52 is located on the second heat conductive layer 12 and encapsulates the thermopile chip 3 and the N T C4. The first packaging shell and the second packaging shell are arranged at intervals, the signal processing chip and the thermopile chip are respectively packaged in the first packaging shell and the second packaging shell which are independent of each other, so that the signal processing chip and the thermopile chip are further isolated, heat exchange between the signal processing chip and the thermopile chip is reduced, and heat interference of the signal processing chip to the thermopile chip is reduced. Meanwhile, a heat conducting member 6 is disposed on the upper surface of the signal processing chip 2, and is connected to the first package casing 51 through the heat conducting member 6. The heat generated by the signal processing chip 2 during operation is transmitted to the first package shell 51 through the heat conducting member 6, and the first package shell 51 is further transmitted to the outside of the substrate 1 through a low thermal resistance path formed by the first heat conducting layer 11, the heat conducting columns 14 and the third heat conducting layer 13, so that the thermal interference of the signal processing chip 2 to the thermopile chip 3 is reduced, and the infrared temperature measurement accuracy of the thermopile chip 3 is improved. Further, the height of the second package casing 52 is higher, so that the distance between the thermopile chip 3 and the receiving window can be ensured, and the height of the first package casing 51 is lower than the height of the second package casing 52, so that not only can the heat conductive member 6 be ensured to be in contact with the first package casing 51, but also the size of the package structure can be reduced.
Compared with the prior art, the invention has the following beneficial effects:
the digital infrared sensor packaging structure provided by the application is provided with a plurality of low thermal resistance paths, and can be used for guiding out main heat (7 0% -9 5% or more) generated by the signal processing chip during working. The surface of the substrate 1 is provided with the first heat conduction layer 11 and the second heat conduction layer 12 which are isolated, so that the signal processing chip 2 and the thermopile chip 3 are physically isolated, and the thermal resistance of the first heat conduction layer 11 substrate 1 area and the second heat conduction layer 12 substrate 1 area is improved, so that the thermal interference of the signal processing chip 2 on the thermopile chip 3 and the N T C4 is reduced. Further, grooves 17 are formed in the vertical direction in the substrate 1 region between the first heat conducting layer 11 and the second heat conducting layer 12, so that the thermal resistances of the first heat conducting layer 11 and the second heat conducting layer 12 in the substrate 1 region are further improved, the region where the signal processing chip 2 is located, the thermopile chip 3 and the region where the nT C4 is located are formed into larger thermal resistances, and the thermal interference of the signal processing chip to the thermopile chip is further reduced. Meanwhile, the first heat conducting layer 11, the heat conducting columns 14 and the third heat conducting layer 13 where the signal processing chip 2 is located form a low thermal resistance path because of high heat conductivity coefficient metal interconnection, so that heat generated during operation of the signal processing chip 2 is mainly conducted to a radiating copper thin or other radiating structures on the substrate 1 through the low thermal resistance path, and main heat (more than 7 0% -9 5%) is conducted out of the packaging structure, so that heat transferred to the thermopile chip 3 through the high thermal resistance path is little, thermal interference of the signal processing chip 2 to the thermopile chip 3 is reduced, accuracy of infrared temperature measurement of the thermopile chip 3 is improved, and accuracy of target temperature to be measured output by the infrared sensor is ensured.
By providing the partition 54 on the package case 5, the signal processing chip 2 and the thermopile chip 3 are separately packaged in the first cavity a and the second cavity B, so that heat exchange between the signal processing chip 2 and the thermopile chip 3 is reduced. Or by packaging the signal processing chip 2 and the thermopile chip 3 in the first package casing 51 and the second package casing 52, which are independent of each other, respectively, the signal processing chip 2 and the thermopile chip 3 are isolated from each other, thereby reducing heat exchange between the signal processing chip 2 and the thermopile chip 3. Meanwhile, the heat conductive member 6 is disposed on the signal processing chip 2, and the heat conductive member 6 is brought into contact with the first package case 5 1. The heat generated by the signal processing chip 2 during operation is conducted to the first package housing 51 through the heat conducting member 6, and then the first package housing 51 is conducted out of the package structure through a low thermal resistance path formed by the first heat conducting layer 11, the heat conducting columns 14 and the third heat conducting layer 13, so that thermal interference of the signal processing chip to the thermopile chip is avoided.
And the thermopile chip 3 and the nT C4 are simultaneously arranged on the second heat conduction layer 12, and the second heat conduction layer 12 is used as a metal heat conduction layer to enable heat between the thermopile chip 3 and the nT C4 to be more balanced, so that the thermal resistance between the thermopile chip 3 and the nT C4 is reduced, errors between ambient temperatures measured by the thermopile chip 3 and the nT C4 are reduced, and accuracy of a target temperature to be measured output by the infrared sensor is greatly improved.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (8)
1. A sensor package structure, comprising:
The heat conducting device comprises a substrate, wherein a first heat conducting layer and a second heat conducting layer are arranged on the upper surface of the substrate, the first heat conducting layer and the second heat conducting layer are arranged at intervals, a third heat conducting layer is arranged on the lower surface of the substrate, at least one heat conducting column is formed on the substrate, the heat conducting column penetrates through the substrate, and the heat conducting column is communicated with the first heat conducting layer and the third heat conducting layer;
the signal processing chip is positioned on the first heat conduction layer;
a thermopile chip located on the second heat conductive layer;
The packaging shell is positioned on the upper surface of the substrate and packages the thermopile chip and the signal processing chip;
A partition piece is arranged in the packaging shell and divides the packaging structure into a first cavity and a second cavity;
the signal processing chip is positioned in the first cavity, and the thermopile chip is positioned in the second cavity;
an opening is arranged between the partition piece and the substrate, so that the first cavity is communicated with the second cavity;
the partition piece surrounds in the top of first cavity, and with first heat conduction layer connects, just the partition piece orientation first cavity's one side is coated with absorbing material for absorbing heat radiation.
2. The sensor package of claim 1, wherein the first thermally conductive layer is spaced apart from the periphery of the second thermally conductive layer, and the package housing is located in the first thermally conductive layer.
3. The sensor package according to claim 1, wherein the substrate has a plurality of through holes penetrating through the substrate, a plurality of the heat conductive pillars are located in the through holes, and a plurality of the heat conductive pillars are spaced apart from each other.
4. The sensor package of claim 1, wherein the package housing comprises a first package housing and a second package housing, the first heat conductive layer and the second heat conductive layer are arranged in parallel, the first package housing is located on the first heat conductive layer and encapsulates the signal processing chip, and the second package housing is located on the second heat conductive layer and encapsulates the thermopile chip.
5. The sensor package according to claim 4, wherein a heat conductive member is provided on an upper surface of the signal processing chip, and the heat conductive member is connected to the first package case.
6. The sensor package of claim 4, wherein the first package has a height that is lower than a height of the second package.
7. The sensor package of claim 1, wherein the substrate between the first and second thermally conductive layers has a slot therein, the slot communicating with the cavity of the package.
8. The sensor package according to any one of claims 1 to 7, wherein the first heat conductive layer, the heat conductive post, and the third heat conductive layer are integrally formed.
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| CN202311083383.9A CN117012734B (en) | 2023-08-24 | 2023-08-24 | Sensor packaging structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011220938A (en) * | 2010-04-13 | 2011-11-04 | Panasonic Electric Works Co Ltd | Infrared-ray sensor manufacturing method |
| CN102933942A (en) * | 2010-06-24 | 2013-02-13 | 松下电器产业株式会社 | Infrared sensor |
| JP2014169924A (en) * | 2013-03-04 | 2014-09-18 | Mikuni Corp | Temperature measurement instrument |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6930885B2 (en) * | 2002-12-23 | 2005-08-16 | Eastman Kodak Company | Densely packed electronic assemblage with heat removing element |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011220938A (en) * | 2010-04-13 | 2011-11-04 | Panasonic Electric Works Co Ltd | Infrared-ray sensor manufacturing method |
| CN102933942A (en) * | 2010-06-24 | 2013-02-13 | 松下电器产业株式会社 | Infrared sensor |
| JP2014169924A (en) * | 2013-03-04 | 2014-09-18 | Mikuni Corp | Temperature measurement instrument |
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