CN117008234A - Hyperbolic super surface based on silicon dioxide and preparation method and application thereof - Google Patents
Hyperbolic super surface based on silicon dioxide and preparation method and application thereof Download PDFInfo
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- CN117008234A CN117008234A CN202311030408.9A CN202311030408A CN117008234A CN 117008234 A CN117008234 A CN 117008234A CN 202311030408 A CN202311030408 A CN 202311030408A CN 117008234 A CN117008234 A CN 117008234A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 218
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 108
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 230000006835 compression Effects 0.000 abstract description 6
- 238000007906 compression Methods 0.000 abstract description 6
- 230000002349 favourable effect Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 6
- 238000001931 thermography Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention belongs to the technical field of super-surface and micro-nano photons, and particularly relates to a hyperbolic super-surface based on silicon dioxide and a preparation method and application thereof. The hyperbolic super surface based on the silicon dioxide provided by the invention has a nano grating structure formed by a plurality of strip-shaped silicon dioxide, can generate hyperbolic phonon polaritons in a wave band of 8-10 mu m, is favorable for converging light energy to a specific area and realizing effective compression of light, is positioned in an atmospheric window, can perform far-distance infrared thermal imaging, is favorable for improving the performance of a photoelectric detector and the super surface imaging of a middle infrared wave band, and has high super surface integration level, so that the integration of photons is convenient.
Description
Technical Field
The invention belongs to the technical field of super-surface and micro-nano photons, and particularly relates to a hyperbolic super-surface based on silicon dioxide and a preparation method and application thereof.
Background
The polaritons can break through the traditional optical diffraction limit, compress and control the light wavelength at the nanoscale, and are hot spots in the field of nano-photonics research in recent years. Phonon-excited photons are quasi-particles produced by coupling photons with optical phonons produced by lattice vibrations in polar crystals. Because of lower optical loss in polar materials, the quality factor of phonon polaritons is generally better than that of plasmons, and the phonon polaritons can generate a strong field enhancement effect in a specific wave band.
The hyperbolic supersurface has two effective relative dielectric constants in the plane, εeff, x and εeff, y have opposite signs. In this material, phonon polaritons exhibit a hyperbolic planar dispersion with anisotropic planar propagation. By constructing a hyperbolic hypersurface, in-plane phonon coupling can be achieved, forming an in-plane hyperbolic wavefront. This has important implications for the compression and manipulation of light wavelengths.
The middle infrared band (2.5-25 μm) comprises two atmospheric windows (3-5 μm and 8-14 μm), and far-distance infrared thermal imaging can be performed by detecting infrared light radiated by a target object through the atmospheric windows. However, each material generates surface plasmons or phonon polaritons only in a specific band, and for a band of 8 to 10 μm, phonon polaritons concerning this band are currently applied less.
Disclosure of Invention
In view of the above, the invention aims to provide a silica-based hyperbolic super surface, a preparation method and application thereof, and the silica-based hyperbolic super surface can generate hyperbolic phonon polaritons in a wave band of 8-10 mu m, so that effective compression of light is realized, and the performance of a mid-infrared wave band photoelectric detector and the imaging of the mid-infrared wave band super surface are improved.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a hyperbolic silica-based super-surface, which comprises a substrate 1 and a silica super-surface 2 positioned on the substrate 1, and is characterized in that the silica super-surface 2 is provided with a nano grating structure; the nano grating structure consists of a plurality of strip-shaped silicon dioxide.
Preferably, the length of the strip-shaped silicon dioxide is 5-20 μm, and the width is 50-200 nm.
Preferably, the gaps between the strip-shaped silicon dioxide are 10-200 nm.
Preferably, the thickness of the silica super surface 2 is 20-50 nm, and the width is 3-20 μm.
The invention also provides a preparation method of the hyperbolic super surface, which is characterized by comprising the following steps:
when the composition of the substrate is non-silicon dioxide, the preparation method comprises the following steps: depositing silicon dioxide on the substrate by low-pressure chemical vapor deposition to form a silicon dioxide layer;
etching the silicon dioxide layer to form a nano grating structure to obtain a hyperbolic super surface;
when the composition of the substrate is silicon dioxide, the preparation method comprises the following steps: and directly etching on the substrate to form a nano grating structure to obtain the hyperbolic super surface.
Preferably, the etching is electron beam exposure and plasma etching.
The invention also provides application of the hyperbolic super-surface prepared by the technical scheme or the preparation method of the technical scheme in mid-infrared band super-surface imaging or mid-infrared detectors.
The invention provides a hyperbolic silica-based supersurface, which comprises a substrate 1 and a silica supersurface 2 positioned on the substrate 1; the silicon dioxide super surface 2 is provided with a nano grating structure; the nano grating structure consists of a plurality of strip-shaped silicon dioxide. The hyperbolic super surface based on the silicon dioxide provided by the invention has a nano grating structure formed by a plurality of strip-shaped silicon dioxide, can generate hyperbolic phonon polaritons in a wave band of 8-10 mu m, is favorable for converging light energy to a specific area and realizing effective compression of light, is positioned in an atmospheric window, can perform far-distance infrared thermal imaging, is favorable for improving the performance of a photoelectric detector and the super surface imaging of a middle infrared wave band, has high super surface integration level and is convenient for photon integration, can be applied to the super surface imaging of the middle infrared wave band and a light energy transmission device to prepare a super lens, realizes that the focused light is more compact at a place smaller than the wavelength, has smaller focus, has higher resolution of an image, and is suitable for the design of an ultra-high density integrated optical path.
Drawings
FIG. 1 is a schematic diagram of a hyperbolic supersurface in an embodiment of the invention, wherein 1 is a substrate and 2 is a silica supersurface;
FIG. 2 is a schematic diagram of a hyperbolic subsurface structure according to an embodiment of the invention, wherein 2 is a silicon dioxide subsurface;
FIG. 3 is a near-field optical view of a hyperbolic subsurface at a slit ratio of 40% under an incidence of a dipole light source having a wavelength of 9.00 μm in an embodiment of the present invention;
FIG. 4 is a near-field optical diagram of a hyperbolic subsurface at a slit ratio of 40% under an incidence of a dipole light source having a wavelength of 9.13 μm in an embodiment of the present invention;
FIG. 5 is a near-field optical view of a hyperbolic subsurface at a slit ratio of 30% under an incidence of a dipole light source having a wavelength of 9.13 μm in an embodiment of the present invention;
FIG. 6 is a near-field optical view of a hyperbolic subsurface at a 30% slit ratio under an incident dipole light source having a wavelength of 9.23 μm in accordance with an embodiment of the present invention;
FIG. 7 is a near-field optical view of a hyperbolic subsurface at 20% slit ratio under an incident dipole light source having a wavelength of 9.23 μm in an embodiment of the present invention;
FIG. 8 is a near-field optical plot of a hyperbolic subsurface at 20% slit ratio at 9.31 μm wavelength dipole light source in an embodiment of the invention.
Detailed Description
The invention provides a hyperbolic silica-based supersurface, which comprises a substrate 1 and a silica supersurface 2 positioned on the substrate 1; the silicon dioxide super surface 2 is provided with a nano grating structure; the nano grating structure consists of a plurality of strip-shaped silicon dioxide.
As shown in fig. 1, the silica-based hyperbolic supersurface provided by the invention comprises a substrate 1. In the invention, the substrate is preferably a silicon wafer or a quartz wafer, more preferably a silicon wafer; the length of the substrate is preferably 1 to 10cm, more preferably 2 to 5cm, and the width is preferably 1 to 10cm, more preferably 2 to 5cm.
As shown in fig. 1, the silica-based hyperbolic supersurface provided by the invention comprises a silica supersurface 2 on the substrate 1. In the present invention, the silica supersurface 2 has a nano-grating structure; the nano-grating structure consists of a plurality of banded silica, preferably 10 strips.
In the present invention, the length of the strip-shaped silica is preferably 5 to 20 μm, more preferably 10 to 15 μm, the width is preferably 50 to 200nm, more preferably 70 to 150nm, and the gap between the strip-shaped silica is preferably 10 to 200nm, more preferably 20 to 100nm; the length of the gaps between the strip-shaped silica is the same as the length of the strip-shaped silica.
In the present invention, the slit ratio is defined as the width of the stripe-shaped silica/(the width of the stripe-shaped silica+the gap width between the stripe-shaped silica) ×100%; the slit ratio is preferably 20 to 40%, more preferably 30%.
In the present invention, the thickness of the silica supersurface 2 is preferably 20 to 50nm, more preferably 30 to 40nm, and the width is preferably 3 to 20 μm, more preferably 5 to 15 μm.
The hyperbolic super surface based on the silicon dioxide provided by the invention has a nano grating structure formed by a plurality of strip-shaped silicon dioxide, can generate hyperbolic phonon polaritons in a wave band of 8-10 mu m, is favorable for converging light energy to a specific area and realizing effective compression of light, is positioned in an atmospheric window, can perform far-distance infrared thermal imaging, is favorable for improving the performance of a photoelectric detector and the super surface imaging of a middle infrared wave band, has small structure size and high integration level, is convenient for photon integration, can be applied to super surface imaging and light energy transmission devices to manufacture a super lens, realizes focusing of light in a place smaller than wavelength, and is tighter as the focused light is, the smaller the focus is, the higher the resolution of an image is, and is suitable for super-high-density integrated optical path design.
The invention also provides a preparation method of the hyperbolic super surface, which is characterized by comprising the following steps:
when the composition of the substrate is non-silicon dioxide, the preparation method comprises the following steps: chemical vapor deposition of silicon dioxide on a substrate to form a silicon dioxide layer;
etching the silicon dioxide layer to form a nano grating structure to obtain a hyperbolic super surface;
when the composition of the substrate is silicon dioxide, the preparation method comprises the following steps: and directly etching on the substrate to form a nano grating structure to obtain the hyperbolic super surface.
The present invention is not limited to the specific source of the raw materials, and may be commercially available products known to those skilled in the art, unless otherwise specified.
When the composition of the substrate is non-silicon dioxide, the invention forms a silicon dioxide layer on the substrate by low pressure chemical vapor deposition of silicon dioxide.
After the silicon dioxide layer is formed, the silicon dioxide layer is etched to form a nano grating structure, so that the hyperbolic super surface is obtained.
When the substrate is silicon dioxide, the method directly etches the substrate to form a nano grating structure, so as to obtain the hyperbolic super surface.
In the present invention, the etching is preferably electron beam exposure and plasma etching.
The invention also provides application of the hyperbolic super-surface prepared by the technical scheme or the preparation method of the technical scheme in mid-infrared band super-surface imaging or mid-infrared detectors.
The application mode of the hyperbolic super-surface in the super-surface imaging or mid-infrared detector is not particularly limited, and the application mode well known in the art is adopted.
Under the excitation of a dipole light source with the incident wavelength of 8-10 mu m, the hyperbolic super-surface energy provided by the invention can generate hyperbolic phonon polaritons, has strong mode field limiting capability, and realizes the effective compression of light. By changing the ratio of the wavelength, the width of the strip-shaped silicon dioxide and the gap between the strip-shaped silicon dioxide, a required hyperbolic surface light field can be generated, and a required electromagnetic wave front can be obtained, so that the hyperbolic super-surface based on the silicon dioxide can be applied to the fields of super-surface imaging and infrared detectors.
The technical solutions of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, but they should not be construed as limiting the scope of the present invention.
Example 1
The invention provides a two hyperbolic super-surface based on silicon dioxide, which comprises a substrate and a silicon dioxide super-surface, wherein the silicon dioxide super-surface is arranged on the substrate (the length is 2cm and the width is 2 cm), and the silicon dioxide super-surface is provided with a nano grating structure; the nano grating structure consists of 10 strip-shaped silicon dioxide, the length of the strip-shaped silicon dioxide is 10 mu m, the width of the strip-shaped silicon dioxide is 75nm, the gaps between the strip-shaped silicon dioxide are 50nm, the sum of the width and the gaps of the strip-shaped silicon dioxide is 125nm, namely the slit accounts for 40%, the thickness of the super surface of the silicon dioxide is 30nm, and the width of the super surface of the silicon dioxide is 10 mu m;
the preparation method comprises the following steps: depositing silicon dioxide on a substrate in a chemical vapor phase to form a silicon dioxide layer; and carrying out electron beam exposure and plasma etching on the silicon dioxide layer to form a nano grating structure, thereby obtaining the hyperbolic super surface.
Example 2
The difference from example 1 was that the width of the stripe-shaped silica was 87.5nm, the gap between the stripe-shaped silica was 37.5nm, and the sum of the width and the gap of the stripe-shaped silica was 125nm, i.e., the slit ratio was 30%, and the rest was the same as in example 1.
Example 3
The difference from example 1 was that the width of the stripe-shaped silica was 100nm, the gap between the stripe-shaped silica was 25nm, and the sum of the width of the stripe-shaped silica and the gap was 125nm, i.e., the slit ratio was 20%, and the rest was the same as in example 1.
Performance test:
the relative dielectric constant of the silicon dioxide layer in example 1 was tested and the formula was: epsilon Lorentz (ω)＝ε ∞ +Ω 2 /(ω 2 TO -ω 2 -iγω), wherein ε ∞ ＝2.14，Ω＝950cm -1 ，γ＝10cm -1 ，ω TO ＝1064cm -1 。
As a result, it was found that the relative dielectric constant of silica was ∈= -6.25+1.82i at 9.00 μm, ∈= -9.91+3.89i at 9.13 μm, ∈= -14.83+8.77i at 9.23 μm, and ∈= -18.85+20.63i at 9.31 μm.
Etching the silicon dioxide layer of the embodiment 1 to obtain a silicon dioxide hyperbolic super-surface, and calculating the equivalent relative dielectric constant of the silicon dioxide hyperbolic super-surface, wherein the calculation formula is as follows: epsilon eff,x ＝1/((1－ζ)/ε+ζ)，ε eff,y ζ=g/(g+w), where ζ is the slit ratio, g is the gap between the strip-shaped silica, and w is the width of the strip-shaped silica. The results are shown in FIGS. 3 to 8.
As can be seen from FIGS. 3 and 4, the width of the silica strips was 75nm, the gaps between the silica strips were 50nm, that is, the slit ratio was 40%, and ε was 9.00. Mu.m eff,x ＝3.2+0.3i，ε eff,y = -3.4+1.1i; epsilon at 9.13 μm with a 40% slit ratio eff,x ＝2.9+0.2i，ε eff,y ＝-5.6+2.4i。
As can be seen from FIGS. 5 and 6, the second stripThe width of the silicon oxide is 87.5nm, the gap between the strip silicon dioxide is 37.5nm, namely, the equivalent relative dielectric constant of the hyperbolic super surface of the silicon dioxide is epsilon when the slit ratio is 30 percent and the equivalent relative dielectric constant of the hyperbolic super surface of the silicon dioxide is epsilon when the slit ratio is 9.13 mu m eff,x ＝4.1+0.4i，ε eff,y = -6.7+2.8i; epsilon at 9.23 μm eff,x ＝3.7+0.3i，ε eff,y ＝-10.2+6.3i。
As can be seen from FIGS. 7 and 8, the width of the striped silica is 100nm, the gap between the striped silica is 25nm, that is, the slit ratio is 40%, the equivalent relative permittivity of the hyperbolic silica super-surface is ε at 9.23. Mu.m eff,x ＝6.8+0.9i，ε eff,y -11+7.2i; epsilon at 9.31 μm eff,x ＝5.44+0.6i，ε eff,y ＝-14.9+17i。
Although the foregoing embodiments have been described in some, but not all, embodiments of the invention, according to which one can obtain other embodiments without inventiveness, these embodiments are all within the scope of the invention.
Claims (7)
1. A silica-based hyperbolic supersurface comprising a substrate (1) and a silica supersurface (2) on said substrate (1), characterized in that said silica supersurface (2) has a nanograting structure; the nano grating structure consists of a plurality of strip-shaped silicon dioxide.
2. The hyperbolic supersurface of claim 1 wherein said strip silica has a length of 5 to 20 μm and a width of 50 to 200nm.
3. The hyperbolic supersurface of claim 1 or 2 wherein the gaps between the strip-shaped silica are 10 to 200nm.
4. Hyperbolic supersurface according to claim 1, wherein the silica supersurface (2) has a thickness of 20-50 nm and a width of 3-20 μm.
5. The method for preparing the hyperbolic super surface according to any one of claims 1 to 4, which is characterized in that:
when the composition of the substrate is non-silicon dioxide, the preparation method comprises the following steps: depositing silicon dioxide on the substrate by low-pressure chemical vapor deposition to form a silicon dioxide layer;
etching the silicon dioxide layer to form a nano grating structure to obtain a hyperbolic super surface;
when the composition of the substrate is silicon dioxide, the preparation method comprises the following steps: and directly etching on the substrate to form a nano grating structure to obtain the hyperbolic super surface.
6. The method of claim 5, wherein the etching is electron beam exposure and plasma etching.
7. Use of a hyperbolic supersurface according to any one of claims 1 to 4 or prepared by a method according to any one of claims 5 to 6 in mid-infrared band supersurface imaging or mid-infrared detectors.
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| CN202311030408.9A CN117008234A (en) | 2023-08-16 | 2023-08-16 | Hyperbolic super surface based on silicon dioxide and preparation method and application thereof |
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