CN117005025B - Magnetic suspension rotation revolution reaction chamber device - Google Patents

Magnetic suspension rotation revolution reaction chamber device Download PDF

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Publication number
CN117005025B
CN117005025B CN202311123857.8A CN202311123857A CN117005025B CN 117005025 B CN117005025 B CN 117005025B CN 202311123857 A CN202311123857 A CN 202311123857A CN 117005025 B CN117005025 B CN 117005025B
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revolution
magnetic
graphite
substrate carrier
speed
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CN117005025A (en
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李书田
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Suzhou Zhongke Heavy Instrument Semiconductor Materials Co ltd
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Suzhou Zhongke Heavy Instrument Semiconductor Materials Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The embodiment of the specification provides a magnetic suspension rotation revolution reaction chamber device, which comprises a graphite foundation, a main graphite revolution body, a plurality of substrate carriers, a plurality of groups of magnetic mechanisms, a heater and a processor; the graphite foundation comprises a graphite base and a graphite pressing ring; the multiple groups of magnetic mechanisms comprise a first supporting magnetic mechanism, a second supporting magnetic mechanism, a first driving magnetic mechanism and a second driving magnetic mechanism; the heater is arranged among the main graphite revolving body, the substrate carrier and the graphite base; the processor is configured to: generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed; and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.

Description

Magnetic suspension rotation revolution reaction chamber device
Technical Field
The specification relates to MOCVD equipment technical field, especially relates to a magnetic suspension rotation revolution reaction chamber device.
Background
The Metal-organic chemical vapor deposition (MOCVD) technology is a new technology of vapor phase epitaxy using Metal organic compounds for Metal element transport, and single crystals are obtained by transporting gaseous compounds with epitaxial layer elements onto a substrate and performing a physicochemical reaction on the substrate. In the MOCVD process, the self-rotation of the epitaxial wafer is often used to ensure the temperature uniformity of each region on the epitaxial wafer. The current common planetary motion mode is air-float transmission, namely, the friction force of blowing air flow is utilized to drive the epitaxial wafer carrier plate to rotate, and the bottom of the carrier plate is required to be processed with a complicated air flow guide groove. The method has the defects of poor stability of air flow, complex processing of the device, high cost and the like.
Therefore, it is desirable to provide a reaction chamber device that can realize magnetic support and driving of MOCVD equipment, has high stability, and can ensure uniformity of temperature.
Disclosure of Invention
One or more embodiments of the present disclosure provide a magnetic levitation rotation revolution reaction chamber device, including a graphite base, a main graphite rotator, a plurality of substrate carriers, a plurality of sets of magnetic mechanisms, a heater, and a processor; the graphite foundation comprises a graphite base and a graphite pressing ring; the plurality of groups of magnetic mechanisms comprise a first supporting magnetic mechanism, a second supporting magnetic mechanism, a first driving magnetic mechanism and a second driving magnetic mechanism, wherein the first supporting magnetic mechanism restrains the radial movement of the main graphite revolution body, the first driving magnetic mechanism drives the main graphite revolution body, the second supporting magnetic mechanism restrains the radial and axial movement of the substrate carrier, and the second driving magnetic mechanism drives the substrate carrier; the heater is arranged between the main graphite revolving body, the substrate carrier and the graphite base; the processor is configured to: generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed; and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.
One or more embodiments of the present disclosure provide a control method of the magnetic levitation rotation and revolution reaction chamber device, the control method being performed by a processor, the method including: generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed; and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.
One or more embodiments of the present disclosure provide a computer-readable storage medium storing computer instructions that, when read by a computer, perform a method of controlling a magnetic levitation rotation and revolution reaction chamber apparatus as described above.
Drawings
The present specification will be further elucidated by way of example embodiments, which will be described in detail by means of the accompanying drawings. The embodiments are not limiting, in which like numerals represent like structures, wherein:
FIG. 1 is an exemplary block diagram of a reaction chamber arrangement according to some embodiments of the present disclosure;
FIG. 2 is an exemplary cross-sectional view of a reaction chamber arrangement according to some embodiments of the present disclosure;
fig. 3 is an exemplary partial enlarged view of a magnetic levitation rotation and revolution reaction chamber device according to some embodiments of the present specification;
FIG. 4 is an exemplary block diagram of a primary graphite revolution according to some embodiments of the present disclosure;
FIG. 5 is an exemplary cross-sectional view of a primary graphite revolution according to some embodiments of the present disclosure;
FIG. 6 is an exemplary block diagram of a primary disk drive gear magnet according to some embodiments of the present description;
FIG. 7 is an exemplary partial enlarged view of a main disk drive gear magnet according to some embodiments of the present description;
FIG. 8 is an exemplary flow chart for determining rotational speed based on reaction characteristics according to some embodiments of the present disclosure;
fig. 9 is an exemplary model diagram of a uniformity prediction model in accordance with some embodiments of the present specification.
Description of the embodiments
In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present specification, and it is possible for those of ordinary skill in the art to apply the present specification to other similar situations according to the drawings without inventive effort. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.
As used in this specification and the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.
A flowchart is used in this specification to describe the operations performed by the system according to embodiments of the present specification. It should be appreciated that the preceding or following operations are not necessarily performed in order precisely. Rather, the steps may be processed in reverse order or simultaneously. Also, other operations may be added to or removed from these processes.
MOCVD technology is a new technology of vapor phase epitaxy using metal organic compounds for transporting metal elements, and single crystals are obtained by transporting gaseous compounds with epitaxial layer elements onto a substrate, and performing a physicochemical reaction on the substrate. The monocrystalline substrate is subjected to epitaxial reaction, a thin monocrystalline layer is deposited on the surface of the monocrystalline substrate, and the newly deposited layer is called an epitaxial layer; the temperature uniformity of each region on the epitaxial wafer plays a role in determining the growth effect of the epitaxial wafer, and the deviation is generally within 1 ℃. Because the heating temperature deviation of different areas on the rotary substrate is larger, the self-rotation of the epitaxial wafer is an effective way for ensuring the temperature uniformity.
In the existing MOCVD equipment with the rotation or revolution of the substrate carrier, the revolution is generally supported by adopting a central rotating shaft, a bracket, a quartz supporting cylinder and other components, and the rotation adopts an air-bearing supporting mode.
Some embodiments of the present disclosure provide a magnetic levitation rotation revolution reaction chamber device, which can precisely control the rotation speed and direction of a main graphite revolution body, and after a substrate carrier follows the revolution of the main graphite revolution body, drive a magnetic mechanism to mesh, and the substrate carrier rotates; by precisely controlling the rotation of the MOCVD equipment, the reaction, the heating and the like can be more uniform.
FIG. 1 is an exemplary block diagram of a reaction chamber arrangement according to some embodiments of the present disclosure. FIG. 2 is an exemplary cross-sectional view of a reaction chamber arrangement according to some embodiments of the present disclosure. Fig. 3 is an exemplary partial enlarged view of a magnetic levitation rotation and revolution reaction chamber device according to some embodiments of the present specification.
In some embodiments, as shown in fig. 1, 2 and 3, the magnetic levitation rotation and revolution reaction chamber device includes a graphite base, a main graphite rotator 3, a plurality of substrate carriers 5, a plurality of sets of magnetic mechanisms, a heater, and a processor.
The graphite base is used to house the components of the entire reaction chamber arrangement. The shape of the graphite base may be a cylindrical shell without a top surface, etc. The graphite base material may be graphite, graphite with silicon carbide as the surface coating, or the like. The graphite has good high temperature resistance, uniform thermal conductivity, chemical stability, strong thermal shock resistance and the like, so that the graphite base can be better used for MOCVD equipment. In some embodiments, the graphite base includes a graphite base 1 and a graphite press 2.
The graphite susceptor 1 is used to carry the components of the reaction chamber arrangement. The graphite susceptor 1 may be in the shape of a cylindrical recess. In some embodiments, the graphite base 1 may be provided with three-phase windings, which function as a stator of a synchronous motor, and the rotation speed and direction of the main graphite rotator 3 may be controlled by changing the frequency and phase sequence of the windings in cooperation with alternating magnetic poles (corresponding to the synchronous motor rotor) circumferentially arranged at the lower part of the main graphite rotator 3.
The graphite pressing ring 2 is used to restrict displacement of the main graphite revolution body, the plurality of sets of magnetic mechanisms, and the like in the axial direction (the vertical direction as shown in fig. 1). In some embodiments, the graphite pressing ring 2 may be disposed above the main graphite pressing ring 3, and a magnetic mechanism matched with the graphite base 1 may be disposed below the graphite pressing ring 2, and the main graphite pressing ring 3 may be located between the graphite pressing ring 2 and the graphite base 1. In some embodiments, the bottom of the graphite pressing ring 2 is provided with a pressing ring magnet 14 for maintaining the mounting stability of the graphite pressing ring 2.
The main graphite solid 3 refers to a member for rotation. In some embodiments, the main graphite revolution 3 is rotatable about the axis of the reaction chamber arrangement. In some embodiments, the main graphite solid 3 is a cylindrical shell with an open top surface and no bottom surface; the openings in the top surface thereof may be used for placing a plurality of substrate carriers 5.
The substrate carrier 5 refers to a member for placing a substrate. The substrate can be heated and reacted on the substrate carrier 5. In some embodiments, the substrate carrier 5 is rotatable about its own axis to form a spin. The substrate carrier 5 may be flat cylindrical in shape, stepped in edge, and toothed in edge for placement of the magnet.
The magnetic mechanism means a mechanism for achieving movement or restraint by providing a magnetic block. For example, based on a rotating magnetic field generated by the three-phase windings, the corresponding magnet can generate a rotating motion. For example, based on the arrangement of different directions and positions of the N pole and the S pole of the magnetic block, the magnetic block can generate attraction force or repulsion force, so that a mechanism (such as the main graphite rotator 3, the substrate carrier 5 and the like) is supported in a full magnetic suspension mode, and the movement or the position of the mechanism is restrained.
In some embodiments, the plurality of sets of magnetic mechanisms may include a first support magnetic mechanism, a second support magnetic mechanism, a first drive magnetic mechanism, and a second drive magnetic mechanism. In some embodiments, the magnetic suspension can be formed by multiple groups of magnetic mechanisms under the action of magnetic force, so as to form a reaction chamber device in which the main graphite rotator 3 revolves while the substrate carrier 5 rotates.
In some embodiments, the first support magnetic mechanism may constrain radial and axial movement of the main graphite revolution 3. The first driving magnetic mechanism can drive the main graphite rotator 3 to revolve the main graphite rotator 3. The second supporting magnetic mechanism can restrict the radial and axial movement of the substrate carrier 5. The second driving magnetic mechanism may drive the substrate carrier 5 to rotate the substrate carrier 5.
In some embodiments, the first support magnet mechanism may include a main radial fixed magnet 8, a main support magnet 10, and a main movable support magnet 11. The main support magnetic block 10 is used for supporting the main graphite rotator 3; the main radial fixed magnet 8 and the main movable support magnet 11 restrict the axial movement of the main graphite rotator 3 from the upper and lower directions so as to ensure the rotation stability of the main graphite rotator 3; the magnetic block pressing block 9 is used for maintaining the stability of the installation of the magnetic block.
In some embodiments, the second support magnetic mechanism includes a tray support bearing magnet 16 and a tray radial support magnet 17. The tray support bearing magnet 16 and the tray radial support magnet 17 serve to support the substrate carrier 5 and restrain the substrate carrier 5 from moving in the axial direction. In some embodiments, as shown in FIG. 3, tray support bearing magnet 16-1 and tray support bearing magnet 16-2, tray radial support magnet 17-1 and tray radial support magnet 17-2 are arranged as N-stage inward-facing and N-stage outward-facing magnets, respectively; for example, the N-stage of the tray support bearing magnet 16-1 is facing inward, and the N-stage of the tray support bearing magnet 16-2 is facing outward, the axial position being defined by the force generated by the magnetic attraction.
In some embodiments, the first drive magnetic mechanism includes a graphite rotary disk drive magnetic pole 19, a main disk drive gear magnet N stage 12, and a main disk drive gear magnet S stage 13.
Fig. 4 is an exemplary block diagram of a primary graphite rotor in accordance with some embodiments of the present disclosure. Fig. 5 is an exemplary cross-sectional view of a primary graphite revolution according to some embodiments of the present disclosure.
In some embodiments, as shown in fig. 4 and 5, the main disk drive gear magnet N stage 12 and the main disk drive gear magnet S stage 13 are alternately arranged at D of the main graphite revolution body 3; e, arranging main radial fixed magnetic blocks 8; f, arranging a magnetic block pressing block 9; the magnetic block 16 for the magnetic gear is arranged at G.
FIG. 6 is an exemplary block diagram of a primary disk drive gear magnet according to some embodiments of the present description. FIG. 7 is an exemplary partial enlarged view of a main disk drive gear magnet according to some embodiments of the present description.
As shown in fig. 6 and 7, the graphite rotary disk drive pole figures include A, B, C three phases, three sets being circumferentially positioned at 120 ° to each other. The main disk drive gear magnetic blocks N12 and the main disk drive gear magnetic blocks S13 are alternately arranged in gear-shaped grooves below the main graphite revolution body 3 respectively. After the graphite rotary disk drive magnetic pole 19 is electrified, the rotating magnetic field generated by the three-phase alternating current drives the main disk drive gear magnetic block N stage 12 and the main disk drive gear magnetic block S stage 13 by the force generated by the rotating magnetic field, so that the main graphite rotary body 3 rotates. In some embodiments, the rotational speed and direction of the main graphite rotor 3 may be precisely controlled by controlling the frequency and phase sequence of the A, B, C three phases of the graphite rotor drive poles 19.
In some embodiments, the second drive magnetic mechanism includes a graphite sun gear 4 and a magnetic block 15 for a magnetic gear.
In some embodiments, as shown in fig. 1, 2 and 3, the magnetic blocks 15 for magnetic gears below the plurality of substrate carriers 5 are magnetic blocks alternately arranged in N-level and S-level, and the shaft below the graphite sun gear 4 is fixedly connected with the graphite base 1, so that the graphite sun gear 4 is kept in a static state, and the plurality of substrate carriers 5 are magnetically engaged with the main graphite rotator 3 through the magnetic blocks 15 for magnetic gears.
In some embodiments, when the main graphite rotator 3 rotates, the plurality of substrate carriers 5 magnetically engage with the main graphite rotator 3 through the magnetic block 15 for a magnetic gear, and each of the plurality of substrate carriers 5 rotates while following the revolution of the main graphite rotator.
In some embodiments, as shown in fig. 1, 2 and 3, a plurality of groups of magnetic mechanisms form magnetic suspension, so that the positions of the main graphite rotator 3 and the substrate carrier 5 are restrained, meanwhile, the magnetic mechanisms are driven to drive the main graphite rotator 3 to revolve, and meanwhile, the substrate carrier 5 rotates, so that the substrate to be subjected to vapor phase epitaxy reaction is heated more uniformly, and the reaction is more thorough.
The heater refers to a device capable of heating a component to be heated in the reaction chamber device. In some embodiments, a heater may be installed between the main graphite rotator 3, the substrate carrier 5, and the graphite base 1. In some embodiments, to make the heating more uniform, the heater may be a spiral-wound, coiled heater.
In some embodiments, as shown in fig. 1, 2 and 3, the heater includes a heating electrode 18 and a graphite heating body 6. A graphite heating body 6 may be disposed between the substrate carrier 5 and the reflecting screen 7; the heating electrode 18 is led out from below the graphite susceptor 1.
In some embodiments, the magnetic suspension rotation revolution reaction chamber device works as follows:
placing a substrate to be subjected to vapor phase epitaxy reaction on a substrate carrier 5, and introducing a reaction gas;
the processor controls the frequency and phase sequence of the graphite rotary disk drive magnetic poles 19, thereby controlling the rotation speed and direction of the main graphite rotary body 3; the processor controls the power of the heater electrode 18, thereby controlling the reaction temperature;
the main graphite rotator 3 revolves, a plurality of substrate carriers 5 rotate, and the revolution and the rotation enable the substrate carriers 5 to be heated uniformly, so that the vapor phase epitaxy reaction is carried out uniformly.
In some embodiments, magnetic levitation is formed by multiple sets of magnetic mechanisms, reducing direct wear of the materials and increasing the service life of, for example, a graphite foundation, a main graphite rotator. Meanwhile, the revolution of the main graphite revolution body and the rotation of the substrate carrier enable the substrate to be reacted to be heated uniformly, so that the growth effect of the epitaxial wafer is ensured, and the uniformity and purity of the finally formed epitaxial film material are improved.
In some embodiments, the magnetic levitation rotation revolution reaction chamber device further comprises one or more sets of sensors. The sensor is disposed at a predetermined point in the inside and/or outside of the substrate carrier 5, and the predetermined point may be any position in the inside and/or outside of the substrate carrier 5. The sensor may comprise a temperature sensor.
In some embodiments, the magnetic suspension rotation revolution reaction chamber device further comprises a reflecting screen 7. The reflective screen 7 is configured to block heat radiation. The reflecting screen 7 may be installed between the main graphite rotator 3, the substrate carrier 5, and the graphite base 1. The reflection screen 7 blocks heat radiation, so that the heater can heat only the main graphite rotator 3 and the substrate carrier 5 without affecting the components below the reflection screen 7.
In some embodiments, the reflective screen 7 may be composed of multiple layers of materials having different reflectivities. Different reflectivities correspond to the ability of different materials to absorb and reflect heat. By controlling the material of the reflecting screen 7, the temperature of the whole device and the reaction chamber can be controlled more precisely. In some embodiments, the material of the reflective screen 7 may be gold, copper, aluminum, molybdenum, or other materials with high reflectivity. In some embodiments, the reflective screen 7 may be communicatively coupled to the processor.
The processor is used for processing data from at least one component of the magnetic suspension rotation revolution reaction chamber device or an external data source. For example, the processor may determine the outer layer of the reflective screen 7 based on the sequence of sensed data acquired during the reaction. For another example, the processor may acquire the reaction characteristics, and determine the initial revolution speed of the main graphite solid 3 and the initial rotation speed of the substrate carrier 5 based on the reaction characteristics.
In some embodiments, the processor may include a Central Processing Unit (CPU), an Application Specific Integrated Circuit (ASIC), a special instruction set processor (ASIP), or the like, or any combination thereof.
In some embodiments, the processor may be configured to drive the main graphite rotator to rotate at a set revolution speed by controlling a magnitude of a magnetic force of the first driving magnetic mechanism, and to drive the substrate carrier to rotate at a set spin speed by controlling a magnitude of a magnetic force of the second driving magnetic mechanism.
In some embodiments, the processor may be further configured to determine an initial revolution speed of the main graphite revolution body and to determine an initial rotation speed of the substrate carrier.
In some embodiments, the processor may be further configured to determine a revolution speed profile of the main graphite revolution body over a preset future period of time and a rotation speed profile of the substrate carrier over the preset future period of time.
For more on processor functionality, see the relevant description below.
Some embodiments of the present disclosure provide a control method of a magnetic levitation rotation and revolution reaction chamber device, which may be executed by a processor. In some embodiments, the control method may include: generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed; and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.
The revolution rotation speed means the rotation speed of the main graphite rotor 3.
In some embodiments, the processor may preset a revolution speed, generate a first magnetic force control command according to the set revolution speed, and control the magnitude of the magnetic force of the first driving magnetic mechanism by transmitting the first magnetic force control command to the first driving magnetic mechanism, thereby driving the main graphite rotator 3 to rotate at the set revolution speed.
The rotation speed refers to the rotational speed of the substrate carrier 5.
In some embodiments, the processor may preset the rotation speed, generate a second magnetic force control command according to the set rotation speed, and control the magnitude of the magnetic force of the second driving magnetic mechanism by transmitting the second magnetic force command to the second driving magnetic mechanism, so as to drive the substrate carrier 5 to rotate at the set rotation speed.
In some embodiments, the processor may also acquire sensory information collected by the sensor; and executing the scram operation in response to the sensing information meeting a preset threshold condition.
The sensing information refers to information about the state of the substrate carrier 5 collected by a plurality of sets of sensors. Such as the temperature of the substrate carrier 5.
In some embodiments, the sensed information may be collected by multiple sets of sensors and transmitted to a processor.
In some embodiments, the plurality of sets of sensors may include temperature sensors. Wherein temperature sensors may be disposed at a plurality of preset points in the inside and/or outside of the substrate carrier 5 for acquiring temperature information.
In some embodiments, the preset threshold condition may be a preset temperature threshold. In some embodiments, the processor may perform a scram operation, i.e., control the main graphite rotator 3 and the substrate carrier 5 to stop rotating, in response to the temperature information transmitted by at least one of the temperature sensors located at the plurality of preset points exceeding a preset temperature threshold.
In some embodiments, the processor executes the scram operation by acquiring temperature sensing information acquired by the temperature sensor, so that the magnetic suspension rotation revolution reaction chamber device can be intelligently controlled, and damage of the device due to overhigh temperature is avoided.
FIG. 8 is an exemplary flow chart for determining rotational speed based on reaction characteristics according to some embodiments of the present disclosure. As shown in fig. 8, the process 800 includes the following steps. In some embodiments, the process 800 may be performed by a processor.
Step 810, obtaining a reaction characteristic.
Reaction characteristics refer to characteristics associated with the MOCVD process. In some embodiments, the reaction feature may include a chemical reaction feature of vapor phase epitaxy. In some embodiments, the chemical reaction characteristics of the vapor phase epitaxy may include what is contained in the chemical reaction equations used for the vapor phase epitaxy. For example, the reactants, products, and reaction conditions.
In some embodiments, the reaction characteristics may be preset. For example, the operator empirically presets the reaction characteristics of the upcoming A reaction.
Step 820, determining a preferred revolution speed interval of the main graphite solid 3 and a preferred spin speed interval of the substrate carrier 5 based on the reaction characteristics.
The preferable rotation speed interval is an interval formed by a rotation speed with good vapor phase epitaxy effect in reaction, and the preferable rotation speed interval can respectively correspond to a revolution rotation speed interval and a rotation speed interval.
In some embodiments, the preferred speed interval may also contain a value at which the preferred speed interval becomes a single preferred speed.
In some embodiments, the preferred speed interval may be determined by looking up a pre-set table/vector database. The record in the preset table/vector database may be constructed according to historical data, for example, one or more revolution speeds and rotation speeds used when the vapor phase epitaxy effect is good in the historical data are determined to be a preferable speed interval.
In step 830, the initial revolution speed of the main graphite solid 3 is determined based on the preferable revolution speed interval.
The initial revolution speed refers to the initial rotation speed of the main graphite rotator 3 when the magnetic levitation rotation revolution reaction chamber device is started. In some embodiments, the initial revolution speed may have a plurality of determination manners. For example, one may be randomly selected from the revolution speed intervals. For another example, a median in the preferable revolution speed interval is selected as the initial revolution speed.
In step 840, the initial spin speed of the substrate carrier 5 is determined based on the preferred spin speed interval.
The initial rotation speed refers to an initial rotation speed of the substrate carrier 5 when the magnetic levitation rotation revolution reaction chamber device is started. In some embodiments, the initial spin speed may be determined in a variety of ways. For example, one may be selected randomly from among the rotation speed intervals. For another example, a median in the preferable rotation speed interval is selected as the initial revolution speed.
In some embodiments, the processor may determine an initial revolution speed of the main graphite rotator and an initial rotation speed of the substrate carrier according to the reaction characteristics, and may obtain an initial speed with a better vapor phase epitaxy effect, thereby obtaining a higher yield.
In some embodiments, the processor may collect the sensing information every preset period during the reaction process; according to the data sequence of the sensing information, revolution speed distribution of the main graphite rotator 3 in a preset future period and rotation speed distribution of the substrate carrier 5 in the preset future period are determined.
In some embodiments, the sensor may collect sensing information once every preset period during the reaction, and the collected sensing information forms a data sequence of the sensing information. The preset period refers to a preset period of time, for example, 10 minutes, 2 hours, etc.
Since both the revolution of the main graphite solid of revolution 3 and the rotation of the substrate carrier 5 are not uniform, such as in one revolution period (i.e., 360 ° revolution), the rotational speed may be relatively faster for some time intervals, and the rotational speed may be relatively slower for some time intervals, based on which the rotational speeds for different time intervals form a rotational speed distribution.
In some embodiments, the speed profile may include a speed of rotation for each of a plurality of time intervals over a preset future period. The time interval may be divided according to a preset time interval.
In some embodiments, the rotational speed profile over the predetermined future period may be determined in a number of ways. For example, the rotation speed distribution corresponding to the data sequence in which the sensing information is acquired may be determined as the rotation speed distribution within a preset future period by referring to a preset table/vector database or the like. The record in the preset table/vector database may be constructed according to the historical data, for example, different rotation speed distributions corresponding to different historical sensing information in the historical data are constructed as the preset table/vector database.
In some embodiments, the method of determining the revolution speed distribution and the rotation speed distribution includes: generating candidate revolution speed distribution of a plurality of groups of main graphite revolution bodies 3 and candidate rotation speed distribution of the substrate carrier 5; based on the candidate revolution speed distribution of the plurality of groups of main graphite revolution bodies 3 and the candidate rotation speed distribution of the substrate carrier 5, predicting the temperature uniformity in a preset future period through a uniformity prediction model; the revolution speed distribution of the main graphite solid 3 and the rotation speed distribution of the substrate carrier 5 are determined based on the temperature uniformity in the preset future period.
In some embodiments, the candidate speed profile may be determined in a variety of ways. For example, one or more rotational speeds may be randomly selected in a preferred rotational speed interval to generate a plurality of candidate rotational speed profiles.
The uniformity prediction model may refer to a model for determining temperature uniformity over a preset future period, and in some embodiments, the uniformity prediction model may be a machine learning model. For example, the uniformity prediction model may include any one or combination of a Convolutional Neural Network (CNN) model, a Neural Network (NN) model, or other custom model structure, etc.
Fig. 9 is an exemplary model diagram of a uniformity prediction model in accordance with some embodiments of the present specification. In some embodiments, as shown in fig. 9, the inputs to the uniformity prediction model 950 may include a reaction characteristic 940, a current time temperature profile 930, a candidate rotational speed profile 910 of the main graphite revolution, a candidate rotational speed profile 920 of the substrate carrier. The output of the uniformity prediction model 950 may include the temperature uniformity 960 over a predetermined future period.
The temperature distribution 930 at the current time may include temperatures acquired by a plurality of temperature sensors disposed at preset points in the inside and/or the outside of the substrate carrier 5 at the current time. The temperature uniformity is used to reflect the uniformity of the temperature distribution in the heating area, for example, the higher the temperature uniformity is, the more uniform the temperature distribution in the heating area is, i.e. the temperatures of all parts of the heating area tend to be uniform. The temperature uniformity 960 over a predetermined future period refers to the uniformity of the temperature distribution over a predetermined future period of time. The reaction characteristics 940, the candidate rotational speed profile 910 of the main graphite revolution, and the candidate rotational speed profile 920 of the substrate carrier may be as described above.
In some embodiments, the uniformity prediction model may be trained based on a number of labeled first training samples. The first training sample may be a sample reaction characteristic, a sample temperature profile, a sample candidate rotational speed profile of the main graphite revolution, a sample candidate rotational speed profile of the substrate carrier.
In some embodiments, the first training sample may be obtained based on historical data, and the first label of the first training sample may be determined based on a sample reaction characteristic, a sample temperature distribution, a sample candidate rotational speed distribution of the main graphite revolution body, and a sample candidate rotational speed distribution of the substrate carrier corresponding to a certain historical moment.
In some embodiments, actual rotation and revolution may be performed at the historical moment according to the sample candidate rotational speed distribution of the main graphite revolution body and the sample candidate rotational speed distribution of the substrate carrier, and the temperature distribution of a plurality of sampling time points (for example, collected every 5 s) in a preset future period after the historical moment is counted; calculating the temperature uniformity of each sampling time point according to the temperature distribution of each sampling time point; and according to the temperature uniformity of a plurality of sampling time points, averaging to obtain the label of the sample. There are various calculation methods for the temperature uniformity at each sampling time point, for example, the reciprocal of the variance of the temperature distribution at each sampling time point is calculated to obtain the temperature uniformity at each sampling time point.
In some embodiments, the processor may determine the revolution speed distribution candidate and the rotation speed distribution candidate, which are optimal in temperature uniformity within a preset future period, as the revolution speed distribution of the main graphite solid 3 and the rotation speed distribution of the substrate carrier 5 based on the temperature uniformity within the preset future period. The optimal temperature uniformity may mean that the value of the temperature uniformity is the highest or exceeds a preset threshold, which indicates that the temperatures of all parts of the heating area tend to be consistent, i.e. the temperature distribution is uniform.
In some embodiments, as shown in fig. 9, the input to the uniformity prediction model 950 may also include a reacted duration 970. The reacted duration 970 refers to the time that MOCVD has been performed, and may be a time period from when the magnetic levitation rotation revolution reaction chamber device starts to operate until the current time, and the processor may automatically record the time when the magnetic levitation rotation revolution reaction chamber device starts to operate, and continuously record the time, thereby obtaining the reacted duration 970.
In some embodiments, as the reaction time increases, the substrate gradually extends out of the monocrystalline layer, and the concentration of the reactant in the reaction chamber also changes dynamically, so that the time scale of the reaction process can be better extracted by taking the reacted time length as the input of the uniformity prediction model, and the correlation between the rotation speed and the temperature can be adjusted under the condition that the uniformity prediction model can learn different reaction time lengths.
In some embodiments, the number of sampling time points for different training samples may be different when constructing the labels for the training samples. Wherein the number of sampling time points for different training samples may be related to the reaction characteristics of the samples and the reacted duration of the samples.
In some embodiments, the number of sampling time points may be determined from historical experimental data based on the reaction characteristics of the sample and the length of time the sample has reacted. For example, if the temperature non-uniformity at that time in the historical experimental data results in poor final vapor phase epitaxy effect under certain reaction characteristics and reacted time, the sample is considered to be very sensitive to temperature non-uniformity under the reaction characteristics and reacted time, and therefore, more sampling time points are needed.
In some embodiments, under different response characteristics and response time periods, different sampling time point numbers are selected for different training samples when labels of the training samples are constructed for different tolerance of temperature unevenness, so that the efficiency of sample labeling and model training can be improved, and meanwhile, the prediction precision of the trained model for various input response characteristics and various response time periods can be ensured.
In some embodiments, the uniformity prediction model is used to predict the temperature uniformity in a preset future period, so as to determine the rotation speed distribution of the main graphite rotator and the rotation speed distribution of the substrate carrier, so that more accurate rotation speed distribution can be obtained, and further, the uniformity of the temperature is guaranteed.
In some embodiments, as previously described, the reflective screen 7 may be composed of multiple layers of materials having different reflectivities, and the outer layer may refer to a layer adjacent to the heater side for reflecting thermal radiation. The reflecting screen 7 can be in communication connection with a processor, and the processor can generate reflecting screen control instructions according to the set external display layers, wherein the reflecting screen control instructions are used for changing the hierarchical relationship among the multiple layers of materials of the reflecting screen; the processor may control the reflective screen to have one of the layers of material as an overt layer. For example, the reflecting screen 7 may include a plurality of reflective layers that are not connected to each other, each of the reflective layers may be connected to a power device (e.g., a push rod, a micro motor, etc.), the power device may drive each of the reflective layers to move, and the processor may control the power device to move the designated reflective layer to a designated position, thereby implementing the designated reflective layer as an external layer of the reflecting screen.
In some embodiments, the processor may determine the outer layer of the reflective screen during the reaction process at intervals of a preset period according to the data sequence of the sensing information collected during the reaction process.
In some embodiments, the method for determining the outer layer of the reflective screen is: generating a plurality of candidate display layers; predicting, for each candidate outlier layer, a temperature uniformity within a preset future period based on the uniformity prediction model described above; the display layer of the reflective screen is determined based on the temperature uniformity over a predetermined future period of time.
For example, each candidate outer display layer is input into a uniformity prediction model together with the reaction characteristics, the temperature distribution at the current moment, the candidate rotation speed distribution of the main graphite rotator, the candidate rotation speed distribution of the substrate carrier and the reacted time length, so that the temperature uniformity of each candidate outer display layer in a preset future period is obtained, and the optimal corresponding candidate outer display layer in the temperature uniformity in the preset future period is determined as the outer display layer of the reflecting screen. For a description of the temperature uniformity, uniformity prediction model, see the description above.
In some embodiments, the best performing layer can be accurately selected by determining the outer layer of the reflective screen using temperature uniformity, thereby accurately controlling the temperature of the reaction chamber.
One or more embodiments of the present specification also provide a computer-readable storage medium storing computer instructions that, when read by a computer in the storage medium, perform the control method according to any one of the above embodiments.
While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing detailed disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements, and adaptations to the present disclosure may occur to one skilled in the art. Such modifications, improvements, and modifications are intended to be suggested within this specification, and therefore, such modifications, improvements, and modifications are intended to be included within the spirit and scope of the exemplary embodiments of the present invention.
Meanwhile, the specification uses specific words to describe the embodiments of the specification. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic is associated with at least one embodiment of the present description. Thus, it should be emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various positions in this specification are not necessarily referring to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of the present description may be combined as suitable.
Furthermore, the order in which the elements and sequences are processed, the use of numerical letters, or other designations in the description are not intended to limit the order in which the processes and methods of the description are performed unless explicitly recited in the claims. While certain presently useful inventive embodiments have been discussed in the foregoing disclosure, by way of various examples, it is to be understood that such details are merely illustrative and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements included within the spirit and scope of the embodiments of the present disclosure.
Likewise, it should be noted that in order to simplify the presentation disclosed in this specification and thereby aid in understanding one or more inventive embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof. This method of disclosure, however, is not intended to imply that more features than are presented in the claims are required for the present description. Indeed, less than all of the features of a single embodiment disclosed above.
Each patent, patent application publication, and other material, such as articles, books, specifications, publications, documents, etc., referred to in this specification is incorporated herein by reference in its entirety. Except for application history documents that are inconsistent or conflicting with the content of this specification, documents that are currently or later attached to this specification in which the broadest scope of the claims to this specification is limited are also. It is noted that, if the description, definition, and/or use of a term in an attached material in this specification does not conform to or conflict with what is described in this specification, the description, definition, and/or use of the term in this specification controls.
Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments of this specification. Other variations are possible within the scope of this description. Thus, by way of example, and not limitation, alternative configurations of embodiments of the present specification may be considered as consistent with the teachings of the present specification. Accordingly, the embodiments of the present specification are not limited to only the embodiments explicitly described and depicted in the present specification.

Claims (10)

1. The magnetic suspension rotation revolution reaction chamber device is characterized by comprising a graphite foundation, a main graphite revolving body, a plurality of substrate carriers, a plurality of groups of magnetic mechanisms, a heater and a processor;
the graphite foundation comprises a graphite base and a graphite pressing ring;
the plurality of groups of magnetic mechanisms comprise a first supporting magnetic mechanism, a second supporting magnetic mechanism, a first driving magnetic mechanism and a second driving magnetic mechanism, wherein the first supporting magnetic mechanism restrains the radial movement of the main graphite revolution body, the first driving magnetic mechanism drives the main graphite revolution body, the second supporting magnetic mechanism restrains the radial and axial movement of the substrate carrier, and the second driving magnetic mechanism drives the substrate carrier;
the heater is arranged between the main graphite revolving body, the substrate carrier and the graphite base;
the processor is configured to:
generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed;
and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.
2. A magnetic levitation rotation and revolution reaction chamber device as set forth in claim 1, wherein the magnetic levitation rotation and revolution reaction chamber device further comprises one or more sets of sensors; the sensor is disposed at a predetermined point in the interior and/or exterior of the substrate carrier, the processor is further configured to: and responding to the sensing information acquired by the sensor to meet a preset threshold condition, and executing the scram operation.
3. A magnetic levitation rotation and revolution reaction chamber device as set forth in claim 1, further comprising a reflecting screen mounted between the main graphite rotator, the substrate carrier and the graphite base, the reflecting screen being configured to block heat radiation.
4. A magnetic levitation rotation and revolution reaction chamber device as set forth in claim 1, wherein the processor is further configured to:
obtaining reaction characteristics, wherein the reaction characteristics comprise chemical reaction characteristics of vapor phase epitaxy;
determining a preferred revolution speed interval of the main graphite rotator and a preferred spin speed interval of the substrate carrier based on the reaction characteristics;
determining the initial revolution speed of the main graphite revolution body based on the preferable revolution speed interval;
and determining the initial rotation speed of the substrate carrier based on the preferred rotation speed interval.
5. A magnetic levitation rotation and revolution reaction chamber device as set forth in claim 1, wherein the processor is further configured to: and in the reaction process, determining revolution speed distribution of the main graphite revolution body in a preset future period and rotation speed distribution of the substrate carrier in the preset future period according to a data sequence of sensing information acquired in the reaction process every preset period.
6. A control method of a magnetic levitation rotation and revolution reaction chamber device according to any one of claims 1 to 5, wherein the control method is performed by a processor, the method comprising:
generating a first magnetic force control instruction according to the set revolution speed, and controlling the magnetic force of the first driving magnetic mechanism to drive the main graphite rotator to rotate at the set revolution speed;
and generating a second magnetic force control instruction according to the set autorotation speed, and controlling the magnetic force of the second driving magnetic mechanism to drive the substrate carrier to rotate at the set autorotation speed.
7. The control method according to claim 6, characterized in that the method further comprises:
acquiring sensing information acquired by a sensor;
and executing the scram operation in response to the sensing information meeting a preset threshold condition.
8. The control method according to claim 6, characterized in that the method further comprises:
obtaining reaction characteristics, wherein the reaction characteristics comprise chemical reaction characteristics of vapor phase epitaxy;
determining a preferred revolution speed interval of the main graphite rotator and a preferred spin speed interval of the substrate carrier based on the reaction characteristics;
determining the initial revolution speed of the main graphite revolution body based on the preferable revolution speed interval;
and determining the initial rotation speed of the substrate carrier based on the preferred rotation speed interval.
9. The control method according to claim 6, characterized in that the method further comprises:
in the reaction process, sensing information is acquired every other preset period;
and determining revolution speed distribution of the main graphite rotator in a preset future period and rotation speed distribution of the substrate carrier in the preset future period according to the data sequence of the sensing information.
10. A computer-readable storage medium storing computer instructions, which when read by a computer in the storage medium, the computer performs the control method according to any one of claims 6-9.
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