CN116995421A - Redefinable planar microwave device based on vanadium dioxide phase-change film - Google Patents

Redefinable planar microwave device based on vanadium dioxide phase-change film Download PDF

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CN116995421A
CN116995421A CN202310985082.9A CN202310985082A CN116995421A CN 116995421 A CN116995421 A CN 116995421A CN 202310985082 A CN202310985082 A CN 202310985082A CN 116995421 A CN116995421 A CN 116995421A
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transmission line
phase
reconstruction
phase change
change film
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黄文�
郭乙龙
张子涵
何伟
桑磊
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Hefei University of Technology
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Hefei University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/29—Terminals; Tapping arrangements for signal inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/10—Resonant antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Waveguide Aerials (AREA)

Abstract

The invention relates to a redefinable planar microwave device based on a vanadium dioxide phase-change film, and belongs to the technical field of microwave devices. The phase-change patch array comprises a phase-change patch array, a dielectric substrate and a metal grounding plate which are sequentially connected. The phase change patch array comprises a plurality of phase change film blocks which are uniformly arranged, and conductive sponge is arranged between every two adjacent phase change film blocks; one end of the phase change patch array is connected with the transmission line and the input port, and the other end is connected with the reconstruction transmission line and the reconstruction port. The phase-change film block, the transmission line and the reconstruction transmission line are all made of vanadium dioxide. When the transmission line, the reconstruction transmission line and the phase-change film blocks are heated to 68-72 ℃ by different combinations, the vanadium dioxide is subjected to phase change, the non-metal state is converted into the metal state, the surface structure of the device is divided into a phase-change area and a non-phase-change area, the phase-change area is equivalent to replace microstrip metal, and redefinable planar microwave devices of two planar microstrip patch antennas, two microwave planar snake-shaped inductances and planar microstrip capacitances are respectively formed.

Description

Redefinable planar microwave device based on vanadium dioxide phase-change film
Technical Field
The invention belongs to the technical field of microwave devices, relates to conversion among various planar microwave functional circuits, and particularly relates to a method for converting a plurality of planar microwave functional circuits by utilizing vanadium dioxide (VO 2 ) The phase change characteristic of the material is used for realizing the multifunctional conversion and reconstruction of devices such as an antenna, a snake-shaped inductor, a capacitor and the like under the condition of effective temperature control.
Background
With the rapid development of microwave integrated circuits, microstrip lines are widely used in microwave transmission lines. The microstrip structure has specificity, and in general, a specific microstrip structure can only realize one function, for example, a plurality of antennas with different structures are distributed on the side of the mobile terminal device to achieve responses with different frequencies, and the low multiplexing rate of the microwave structure is difficult to meet the current 'miniaturization' integration requirement.
In recent years, a function reconfigurable microwave device is in the front of research, multiple functional devices are integrated into one device, and the functions of on-off or replacing a local structure of a circuit are realized by referring to the function of a phase change material serving as a switch, so that the application range of a single microwave device is greatly expanded. However, there are mainly two problems with such reconfigurable devices: (1) In terms of device design structure, vanadium dioxide is only used as a temperature control switch, for example, a microwave passive device integrating a filter, an antenna, a power divider and a coupler on the same substrate is selectively communicated through the vanadium dioxide switch, and the device has more device units in a microsystem, low multiplexing rate of the microwave device and no practical innovation value. (2) In terms of physical heating, the conductivity is changed by controlling the phase change of vanadium dioxide through temperature, and heat is often diffused outwards in a ring shape by taking a heating point as a center, so that the accurate heating of a fixed area according to a microstrip structure is a technical problem.
Disclosure of Invention
In order to realize the conversion, multiplexing and reconstruction of the functions of different microwave devices, namely redefinable microwave devices, the invention provides a redefinable microwave device based on a phase change material.
A redefinable planar microwave device based on a vanadium dioxide phase-change film comprises a phase-change patch array, a dielectric substrate 1 and a metal grounding plate 5 which are sequentially connected.
The phase change patch array comprises more than nine phase change film blocks 2 which are uniformly arranged, and conductive sponge 6 is arranged between every two adjacent phase change film blocks 2; the phase change patch array is positioned in the middle of the medium substrate 1, one end of the phase change patch array is connected with one end of the transmission line 3, and the other end of the corresponding phase change patch array is connected with one end of the reconstruction transmission line 4;
the material of the phase change film block 2, the material of the transmission line 3 and the material of the reconstruction transmission line 4 are vanadium dioxide;
an input port 7 is arranged at the edge of one side of the dielectric substrate 1 at one side of the phase change patch array, and the other end of the transmission line 3 is connected with the input port 7; the opposite side edge of the medium substrate 1 is provided with a reconstruction port 8, and the other end of the reconstruction transmission line 4 is connected with the reconstruction port 8;
when the transmission line 3, the reconstruction transmission line 4 and the phase-change film blocks 2 to 68-72 ℃ are heated by different combinations, the vanadium dioxide material is subjected to phase change, and is converted from a non-metal state to a metal state, at the moment, the surface structure of the device is divided into a phase-change area and a non-phase-change area, the phase-change area is equivalent to replace microstrip metal, and redefinable planar microwave devices of two types of planar microstrip patch antennas, two types of microstrip planar serpentine inductors or planar microstrip capacitors are respectively formed.
The further defined technical scheme is as follows:
the phase-change patch array comprises twenty phase-change film blocks 2, a rectangular array of four rows and five columns is formed, one end of a transmission line 3 is connected to the middle part of the first column, and one end of a reconstruction transmission line 4 is connected to the middle part of the fifth column.
The material of the dielectric substrate 1 is an epoxy resin board (FR 4 ）。
The metal grounding plate 5 is made of copper.
The conductive sponge 6 is a conductive sponge strip, has surface resistance smaller than or equal to 0.05 omega/sp and thermal conductivity of 0.034W/m.degree, and plays roles of conduction and insulation.
When the transmission line 3 and the phase-change film blocks 2 are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metallic state is converted into the metallic state, the transmission line 3 is equivalently used as an impedance transformation line, the phase-change film blocks 2 are equivalently used as radiating rectangles,
when the input port 7, the transmission line 3 and the phase change film block 2 are connected in sequence, the planar microstrip patch antenna with the resonant frequency of 3.3GHz is formed.
When the reconstruction transmission line 4 and the phase-change film blocks 2 are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is changed into the metal state, the reconstruction transmission line 4 is equivalently used as an impedance transformation line, the phase-change film blocks 2 are equivalently used as radiating rectangles, and when the reconstruction port 8, the reconstruction transmission line 4 and the phase-change film blocks 2 are sequentially connected, the planar microstrip patch antenna with the resonant frequency of 3.8-3.9 GHz is formed.
When the heating transmission line 3, the reconstruction transmission line 4 and the phase change film blocks 2 to 68 to 72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line 3 and the reconstruction transmission line 4 are equivalently used as impedance transformation lines, the phase change film blocks 2 are equivalently used as serpentine microstrip lines, one end of each serpentine microstrip line is sequentially connected with the transmission line 3 and the input port 7, the other end of each serpentine microstrip line is sequentially connected with the reconstruction transmission line 4 and the reconstruction port 8, and the microwave plane serpentine inductor with the inductance value range of 12 to 30 nanohenries is formed.
When the heating transmission line 3, the reconstruction transmission line 4 and the phase change film blocks 2 to 68 to 72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line 3 and the reconstruction transmission line 4 are equivalent to be used as impedance conversion lines, the phase change film blocks 2 are equivalent to be used as serpentine microstrip lines different from the structures, one end of each serpentine microstrip line is sequentially connected with the transmission line 3 and the input port 7, the other end of each serpentine microstrip line is sequentially connected with the reconstruction transmission line 4 and the reconstruction port 8, and the microwave plane serpentine inductor with the inductance value range of 13 to 23 nanohenries is formed.
When the heating transmission line 3, the reconstruction transmission line 4 and the phase change film blocks 2 to 68 to 72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line 3 and the reconstruction transmission line 4 are equivalent as impedance transformation lines, the phase change film blocks 2 are equivalent as microstrip capacitors, one ends of the microstrip capacitors are sequentially connected with the transmission line 3 and the input port 7, and the other ends of the microstrip capacitors are sequentially connected with the reconstruction transmission line 4 and the reconstruction port 8, so that the planar microstrip capacitors are formed.
The beneficial technical effects of the invention are as follows:
1. the reconfigurable device of the microwave in the prior art realizes the function reconfiguration of an antenna, a filter, a power divider and the like, and the redefined device provided by the invention not only realizes the frequency reconfiguration of the antenna under the same device and the inductance value reconfiguration of a planar snake-shaped inductor, but also increases and realizes the function of the microwave planar capacitor of a two-port network.
2. In the prior art, the phase change material can reconstruct a microwave circuit and a device, and the phase change material is used as the effect of a switch, namely, different functional modules are designed on the same circuit board in advance, and different modules are selected to play the role by switching on and switching off the switch. The invention refers to the principle of 'pixel' composition in image processing, and proposes to use the phase-change film units to compose an array, heat a specific area to form a specific microwave structure, so as to achieve high multiplexing rate of the same circuit structure, for example, partial phase-change film units play a role in three functional reconstruction, thus having essential difference with the design thought of the prior art, obviously reducing the whole circuit area and greatly improving the device integration level.
3. In the prior art, a reconfigurable microwave device based on vanadium dioxide is difficult to realize accurate point-to-point heating due to heat radiation diffusion, and no method is equivalent to an ideal topological structure, so that the invention aims at the technical problem that the size of a phase change film unit is relatively increased, and the temperature heatable property in the unit and the size designability of the microwave device are balanced; and secondly, the phase change film units are separated by conductive sponge, so that the conductive effect is achieved, and meanwhile, the heat propagated by other film units is isolated, and compared with the previous design thought, the temperature controllability of the phase change material-based microwave device is remarkably improved.
Drawings
Fig. 1 is a schematic diagram of the structure of the device of the present invention.
Fig. 2 is a top view of the device structure of the present invention and a labeled view of the substrate dimensions.
Fig. 3 is a side view of the device structure of the present invention and a device height dimension is depicted.
Fig. 4 is a pictorial representation of the redefinable device internal length and width dimensions.
Fig. 5 is a schematic structural diagram of a planar microstrip patch antenna with a resonant frequency of 3.3 GHz.
Fig. 6 is an equivalent microstrip structure of a planar microstrip patch antenna with a zigzag resonance frequency of 3.3 GHz.
Fig. 7 is a schematic structural diagram of a planar microstrip patch antenna with a zigzag resonance frequency of 3.8-3.9 GHz.
Fig. 8 shows an equivalent microstrip structure of a planar microstrip patch antenna with a zigzag resonance frequency of 3.8-3.9 GHz.
Fig. 9 is a schematic structural diagram of a microwave planar serpentine inductor with an inductance value in the range of 12-30 nanohenries.
Fig. 10 shows an equivalent microstrip structure of a microwave planar serpentine inductor with an inductance value ranging from 12 to 30 nanohenries.
FIG. 11 is a schematic diagram of a microwave planar serpentine inductor with an inductance value in the range of 13-23 nanohenries.
Fig. 12 shows an equivalent microstrip structure of a microwave planar serpentine inductor with an inductance value in the range of 13-23 nanohenries.
Fig. 13 is a schematic structural diagram of a planar microstrip capacitor according to the present invention.
Fig. 14 shows an equivalent microstrip structure for realizing planar microstrip capacitance according to the present invention.
Fig. 15 is a return loss plot of a planar microstrip patch antenna with a zigzag form with a resonant frequency of 3.3 GHz.
Fig. 16 is a return loss diagram of a planar microstrip patch antenna with a zigzag form with a resonant frequency of 3.8-3.9 GHz.
Fig. 17 is a graph of inductance values for a microwave planar serpentine inductor having inductance values in the range of 12-30 nanohenries.
Fig. 18 is a graph of inductance values for a microwave planar serpentine inductor having inductance values in the range of 13-23 nanohenries.
Fig. 19 is a diagram of capacitance values of a planar microstrip capacitor according to the present invention.
Number in the upper diagram: the phase-change material comprises a dielectric substrate 1, a phase-change film 2, a transmission line 3, a reconstruction transmission line 4, a metal grounding plate 5, a conductive sponge 6, an input port 7 and a reconstruction port 8.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings.
Example 1
Referring to fig. 1 and 2, a vanadium dioxide (VO-based 2 ) The redefinable planar microwave device of the phase-change film comprises a phase-change patch array, a dielectric substrate 1 and a metal grounding plate 5 which are connected in sequence.
The phase change patch array is formed by arranging twenty phase change film blocks 2 to form four rows and five columns of rectangles, and conductive sponge 6 is arranged between every two adjacent phase change film blocks 2. The phase change patch array is positioned in the middle of the medium substrate 1, the middle of the outermost column of one side of the phase change patch array is connected with one end of the transmission line 3, and the other end of the transmission line 3 is connected with the input port 7; the middle part of the outermost column of the other side of the corresponding phase change patch array is connected with one end of a reconstruction transmission line 4, and the other end of the reconstruction transmission line 4 is connected with a reconstruction port 8; the input port 7 is fixedly mounted on one side edge of the dielectric substrate 1, and the reconstruction port 8 is fixedly mounted on the other side edge of the dielectric substrate 1.
The material of the phase change film block 2, the material of the transmission line 3 and the material of the reconstruction transmission line 4 are all vanadium dioxide. When the temperature is increased to 68-72 ℃, vanadium dioxide is converted into conductor property from insulator property, the phase change film blocks 2 with different conductive properties form a phase change region and a non-phase change region, the phase change region is equivalent to replace microstrip metal, the non-phase change region is equivalent to replace air, different microstrip structures realize different microstrip functions, and the change of the conductivity of the transmission line 3 and the reconstruction transmission line 4 plays a role in transmission on-off. The dielectric substrate 1 is made of an epoxy resin board (FR) 4 ) The metal grounding plate 5 is made of copper. The phase-change film blocks 2 are separated by a conductive sponge 6, the surface resistance of the conductive sponge is less than or equal to 0.05 omega/sp, and the thermal conductivity is 0.034W/m & deg, so that the conductive sponge plays roles of conducting electricity and insulating heat.
Aiming at the prior erasable planar microwave device based on vanadium dioxide, the size of the phase-change film is very small, the functional reconstruction of an antenna, a filter, a power divider and the like is realized by the realized device structure, but because of heat radiation diffusion, accurate point-to-point heating of the phase-change film is difficult to realize, and no method is equivalent to an ideal topological structure with smooth edges, and the invention improves the technical problem: firstly, the size of the phase change film unit is relatively increased, so that the temperature heating performance in the unit and the size designability of the microwave device are balanced; and secondly, the phase change film units are separated by conductive sponge, so that the conductive effect is achieved, and meanwhile, the heat propagated by other film units is isolated, and compared with the previous design thought, the temperature controllability of the phase change material-based microwave device is remarkably improved.
Referring to fig. 2, 3 and 4, when the central frequency wavelength is λ, the length L of the dielectric substrate 1 b Is 0.5λ, width W b 0.37 lambda, thickness H b 1mm, phase change filmThickness H of block 2 and conductive sponge 6 f1 0.01 to 0.1mm. The length and width of the metal grounding plate 5 are equal to those of the dielectric substrate 1, and the thickness H f0 Is 0.01-0.03mm. Length L of transmission line 3 f1 9.05mm wide W f1 At 0.8mm, the length L of the transmission line 4 is reconstructed f2 9.05mm width W f2 1.75mm; input port 7 and reconstruction port 8 width W z0 1.86mm.
The invention adopts the sapphire with the thickness of 0.5mm as the substrate to plate the vanadium dioxide, and compared with the conventional microstrip line device, the invention changes the metal wire layer into the vanadium dioxide (V0) with the thickness of 0.01-0.1 mm 2 ) A thin film layer.
The core of the device preparation is to prepare a high-quality phase-change film, and the specific processing operation steps of the phase-change film block 2 are as follows:
1. polishing of substrates
Rough grinding and fine grinding are carried out on the sapphire medium substrate blank to obtain a substrate with thickness, surface uniformity and surface smoothness meeting the evaporation requirements, namely a medium substrate;
2. coating film
Vanadium dioxide (VO) with the thickness of O.O05mm is deposited on a sapphire medium substrate under the argon (Ar) sputtering condition that the gas flow is 40Sccm, the temperature in a furnace is 550 ℃ and the sputtering pressure is 0.40kPa 2 ) Annealing the phase-change film in nitrogen atmosphere to obtain a phase-change film block 2 with the thickness of 0.01-0.1 mm, observing the surface under a microscope, selecting a region with uniform grain sputtering, cutting, and separating vanadium dioxide (VO 2 ) The surface conductive gel is stuck on the dielectric substrate 1 (epoxy resin plate) and is uniformly arranged, and the conductive sponge 6 is filled in the separation phase change film block 2; the planar dimensions of the cells of the phase change film block 2 were 4mm by 4mm, and the planar dimensions of the conductive sponge 6 were 4mm by 0.3mm.
In the prior art, the process mainly uses a mask plate to vapor-deposit a vanadium dioxide film with a desired shape on a substrate, but the vapor-deposited vanadium dioxide film is not uniform due to uncontrollable factors of experimental conditions (inconsistent air pressure, temperature, shooting direction of a target, distance and the like in a furnace), and generally presents the phenomena of thick center and thin two sides of the film, thereby influencing the conductivity of the vanadium dioxide and further influencing the working performance of the device.
The innovation point of the process of the invention is that: the method ensures the quality of the prepared vanadium dioxide, and the device can achieve better effect in the microwave field.
The first device being a planar microwave patch antenna
Referring to fig. 5, when the transmission line 3 and the phase change film block 2 shown by hatching in fig. 5 are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, and is converted from a nonmetallic state to a metallic state, the transmission line 3 is equivalently used as an impedance transformation line, and the phase change film block 2 shown by hatching in fig. 5 is equivalently used as a radiation rectangle. Referring to fig. 6, the input port 7, the transmission line 3 and the radiating rectangle are sequentially connected to form the planar microstrip patch antenna with the resonant frequency of 3.3 GHz.
And obtaining the equivalent microstrip size through calculation and optimization: length L of radiating rectangle 0 21.2mm + -0.3 mm, width W 0 16.9mm + -0.3 mm; length L of impedance transformation line f1 Is 9.05mm + -0.3 mm, width W f1 0.8mm + -0.3 mm, width W of input port 7 z0 1.86mm.
When the temperature of the phase-change film is changed from normal temperature to 68-72 ℃, the conductivity of the phase-change film is changed by 5 orders of magnitude (the conductivity before phase change is single digit, and the conductivity after phase change is as high as 10) 6 ) The unheated area is kept at ambient temperature.
Referring to fig. 15, when the above microstrip structure is implemented by heating the phase-change film, it can be seen from the antenna return loss diagram that the antenna of this embodiment 1 works at 3.3GHz, which is a better implementation of the basic functions of the antenna.
Example 2
The second device is a planar microwave patch antenna with frequency reconstruction, and the material and basic dimensions of the second device are the same as those of example 1.
Referring to fig. 7, when the reconstruction transmission line 4 and the phase change film block 2 shown by the shadow are heated to 68-70 ℃, the vanadium dioxide material is subjected to phase change, the non-metallic state is converted into the metallic state, the reconstruction transmission line 4 is equivalent as an impedance transformation line, and the phase change film block 2 shown by the shadow is equivalent as a radiation rectangle; referring to fig. 8, a reconstruction port 8, a reconstruction transmission line 4 and a radiation rectangle are sequentially connected to form a planar microstrip patch antenna with a resonant frequency of 3.8-3.9 GHz.
And obtaining the equivalent microstrip size through calculation and optimization: length L of radiating rectangle 1 17.2mm + -0.3 mm, width W 1 16.9mm + -0.3 mm; length L of impedance transformation line f2 Is 9.05mm + -0.3 mm, width W f2 1.75mm + -0.3 mm, reconstruction port 8 width W z0 1.86mm.
Referring to fig. 16, when the above microstrip structure is implemented by heating the phase-change film, it can be seen from the antenna return loss diagram that the antenna of this embodiment 2 works at 3.8-3.9 GHz, and the basic functions and the frequency reconfigurable functions of the antenna are better implemented.
Example 3
The third device is a microstrip serpentine inductor and the materials and basic dimensions of the third device are the same as those of example 1.
Referring to fig. 9, when the transmission line 3, the reconstruction transmission line 4 and the phase change film block 2 shown by the shadow are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metallic state is converted into the metallic state, the transmission line 3 and the reconstruction transmission line 4 are equivalently used as impedance transformation lines, the phase change film block 2 shown by the shadow is equivalently used as a serpentine microstrip line, and referring to fig. 10 and L 2 Is 12.6mm + -0.3 mm, W 2 4.3mm + -0.3 mm. The input port 7, the transmission line 3, the serpentine microstrip line, the reconstruction transmission line 4 and the reconstruction port 8 are sequentially connected to form the microwave planar serpentine inductor with the inductance value range of 12-30 nanohenries.
Referring to fig. 17, when the phase change film is heated to realize the microstrip structure, an inductance value of 12-30 nanohenries is realized under 0.5GHz by an inductance extraction formula, and an inductance curve is good.
Example 4
The fourth device is a reconstituted microstrip serpentine inductor, and the fourth device has the same materials and basic dimensions as in example 1.
Referring to FIG. 11, when addingWhen the temperature of the heat transmission line 3, the reconstruction transmission line 4 and the phase-change film block 2 shown by the shadow ranges from 68 ℃ to 72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line 3 and the reconstruction transmission line 4 are equivalently used as impedance transformation lines, the phase-change film block 2 shown by the shadow is equivalently used as a snake-shaped microstrip line with different structures, see fig. 12 and L 3 Is 12.6mm + -0.3 mm, W 3 8.3mm + -0.3 mm. The input port 7, the transmission line 3, the serpentine microstrip line, the reconstruction transmission line 4 and the reconstruction port 8 are sequentially connected to form the microwave planar serpentine inductor with the inductance value range of 13-23 nanohenries.
Referring to fig. 18, when the above microstrip structure is realized by heating the phase-change film, an inductance value of 13-23 nanohenries is realized under 0.55GHz by an inductance extraction formula, and the reconfigurability of the inductance value and the inductance curve are better are realized.
Example 5
The fifth device is a planar microstrip capacitor, and the materials and basic dimensions of the fifth device are the same as those of embodiment 1.
Referring to fig. 13, when the transmission line 3, the reconstruction transmission line 4 and the phase change film block 2 shown by the shadow are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metallic state is converted into the metallic state, the transmission line 3 and the reconstruction transmission line 4 are equivalently used as impedance transformation lines, the phase change film block 2 shown by the shadow is equivalently used as a planar microstrip capacitor, and referring to fig. 14 and L 4 8.3 mm.+ -. 0.3mm, W 4 16.9 mm.+ -. 0.3mm, L 5 4mm + -0.3 mm. The input port 7, the transmission line 3, the microstrip capacitor, the reconstruction transmission line 4 and the reconstruction port 8 are sequentially connected to form a planar microstrip capacitor.
Referring to fig. 19, when the phase change film is heated to realize the microstrip structure, a capacitance value of 10-200 picofarads is realized under 0.8GHz by a capacitance extraction formula, and a capacitance curve is good.
It will be readily appreciated by those skilled in the art that the foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.

Claims (10)

1. The redefinable planar microwave device based on the vanadium dioxide phase-change film comprises a phase-change patch array, a dielectric substrate (1) and a metal grounding plate (5) which are sequentially connected, and is characterized in that:
the phase change patch array comprises more than nine phase change film blocks (2) which are uniformly arranged, and conductive sponge (6) is arranged between every two adjacent phase change film blocks (2); the phase change patch array is positioned in the middle of the medium substrate (1), one end of the phase change patch array is connected with one end of the transmission line (3), and the other end of the corresponding phase change patch array is connected with one end of the reconstruction transmission line (4);
the material of the phase change film block (2), the material of the transmission line (3) and the material of the reconstruction transmission line (4) are vanadium dioxide;
an input port (7) is arranged at the edge of one side of the dielectric substrate (1) at one side of the phase change patch array, and the other end of the transmission line (3) is connected with the input port (7); a reconstruction port (8) is arranged at the edge of the other side corresponding to the medium substrate (1), and the other end of the reconstruction transmission line (4) is connected with the reconstruction port (8);
when the transmission line (3), the reconstruction transmission line (4) and the phase change film blocks (2) are heated to 68-72 ℃ by different combinations, the vanadium dioxide material is subjected to phase change, and is converted from a nonmetallic state to a metallic state, at the moment, the surface structure of the device is divided into a phase change area and a non-phase change area, the phase change area is equivalent to replace microstrip metal, and redefined planar microwave devices of two types of zigzag planar microstrip patch antennas, two types of microstrip planar serpentine inductors or planar microstrip capacitors are respectively formed.
2. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein: the phase-change patch array comprises twenty phase-change film blocks (2) which form a rectangular array with four rows and five columns, wherein the middle part of the first column is connected with one end of a transmission line (3), and the middle part of the fifth column is connected with one end of a reconstruction transmission line (4).
3. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein: the material of the dielectric substrate (1) is an epoxy resin board (FR) 4 ）。
4. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein: the metal grounding plate (5) is made of copper.
5. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein: the conductive sponge (6) is a conductive sponge strip, has surface resistance smaller than or equal to 0.05 omega/sp and thermal conductivity of 0.034W/m.degree, and plays roles of conducting electricity and insulating heat.
6. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein:
when the transmission line (3) and the phase-change film blocks (2) are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line (3) is equivalently used as an impedance transformation line, the phase-change film blocks (2) are equivalently used as radiating rectangles, and when the input port (7), the transmission line (3) and the phase-change film blocks (2) are sequentially connected, the I-shaped planar microstrip patch antenna with the resonant frequency of 3.3GHz is formed.
7. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein:
when the reconstruction transmission line (4) and the phase-change film blocks (2) are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the reconstruction transmission line (4) is equivalent to be used as an impedance transformation line, the phase-change film blocks (2) are equivalent to be used as radiating rectangles, and when the reconstruction port (8), the reconstruction transmission line (4) and the phase-change film blocks (2) are connected in sequence, the planar microstrip patch antenna with the resonant frequency of 3.8-3.9 GHz is formed.
8. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein:
when the transmission line (3), the reconstruction transmission line (4) and the plurality of phase-change film blocks (2) are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line (3) and the reconstruction transmission line (4) are equivalently used as impedance transformation lines, the plurality of phase-change film blocks (2) are equivalently used as serpentine microstrip lines, one end of each serpentine microstrip line is sequentially connected with the transmission line (3) and the input port (7), the other end of each serpentine microstrip line is sequentially connected with the reconstruction transmission line (4) and the reconstruction port (8), and the microwave plane serpentine inductor with the inductance value range of 12-30 nanohenries is formed.
9. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein:
when the transmission line (3), the reconstruction transmission line (4) and the plurality of phase-change film blocks (2) are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line (3) and the reconstruction transmission line (4) are equivalent to be used as impedance transformation lines, the plurality of phase-change film blocks (2) are equivalent to be used as serpentine microstrip lines different from the upper section structure, one end of each serpentine microstrip line is sequentially connected with the transmission line (3) and the input port (7), the other end of each serpentine microstrip line is sequentially connected with the reconstruction transmission line (4) and the reconstruction port (8), and the microwave plane serpentine inductor with the inductance value range of 13-23 nanohenries is formed.
10. The redefinable planar microwave device based on a vanadium dioxide phase change film of claim 1, wherein: when the transmission line (3), the reconstruction transmission line (4) and the phase-change film blocks (2) are heated to 68-72 ℃, the vanadium dioxide material is subjected to phase change, the non-metal state is converted into the metal state, the transmission line (3) and the reconstruction transmission line (4) are equivalent to be used as impedance transformation lines, the phase-change film blocks (2) are equivalent to be used as microstrip capacitors, one ends of the microstrip capacitors are sequentially connected with the transmission line (3) and the input port (7), and the other ends of the microstrip capacitors are sequentially connected with the reconstruction transmission line (4) and the reconstruction port (8), so that the planar microstrip capacitors are formed.
CN202310985082.9A 2023-08-07 2023-08-07 Redefinable planar microwave device based on vanadium dioxide phase-change film Pending CN116995421A (en)

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