CN116994845A - Internal silica gel-coated piezoresistor and preparation method thereof - Google Patents
Internal silica gel-coated piezoresistor and preparation method thereof Download PDFInfo
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- CN116994845A CN116994845A CN202311030835.7A CN202311030835A CN116994845A CN 116994845 A CN116994845 A CN 116994845A CN 202311030835 A CN202311030835 A CN 202311030835A CN 116994845 A CN116994845 A CN 116994845A
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- Prior art keywords
- silica gel
- piezoresistor
- coated
- ceramic chip
- chip
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000000741 silica gel Substances 0.000 title claims abstract description 51
- 229910002027 silica gel Inorganic materials 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract description 20
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 229910052709 silver Inorganic materials 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 238000005476 soldering Methods 0.000 claims description 16
- 238000003466 welding Methods 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 238000000498 ball milling Methods 0.000 claims description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 3
- 230000001680 brushing effect Effects 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000011656 manganese carbonate Substances 0.000 claims description 3
- 229940093474 manganese carbonate Drugs 0.000 claims description 3
- 235000006748 manganese carbonate Nutrition 0.000 claims description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims description 3
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000004537 pulping Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 5
- 238000009413 insulation Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000003763 carbonization Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
- H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The application discloses an internally-coated silica gel type piezoresistor and a preparation method thereof, and relates to the technical field of piezoresistor preparation. According to the application, the piezoresistor is welded and then internally coated with the silica gel, so that the insulation effect can be effectively achieved, the reduction of the electrical performance of the piezoresistor caused by carbonization of epoxy resin is prevented, meanwhile, the internally coated silica gel has the characteristics of strong heat conduction capability and insulation and voltage resistance, the lightning surge resistance of the resistor can be improved, the service life of the resistor is prolonged, and under the double-layer protection of the internally coated silica gel and the epoxy resin, the piezoresistor has a stable working environment in a circuit, and the hidden trouble that the whole circuit is burnt out due to failure breakdown of a chip is avoided.
Description
Technical Field
The application relates to the technical field of piezoresistor preparation, in particular to an internally-coated silica gel type piezoresistor and a preparation method thereof.
Background
The piezoresistor is a voltage limiting type protection device. By utilizing the nonlinear characteristic of the piezoresistor, when the overvoltage occurs between two poles of the piezoresistor, the piezoresistor can clamp the voltage to a relatively fixed voltage value, so that the protection of a subsequent circuit is realized.
The common piezoresistor is a resistor body prepared by welding and encapsulating a chip, after the resistor is subjected to multiple lightning surge impacts in a circuit, the epoxy resin is carbonized gradually due to the high temperature generated by the piezoresistor, the leakage current of the resistor is gradually increased, a large amount of heat is generated during the working of the piezoresistor, and failure phenomena such as breakdown, burnout and the like are easy to occur.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the application provides the internally coated silica gel piezoresistor and the preparation method thereof, which can solve the problems that after the conventional resistor is subjected to multiple lightning surge impacts in a circuit, the epoxy resin is carbonized gradually due to the high temperature generated by the piezoresistor, the leakage current of the resistor is increased gradually, a large amount of heat is generated during the working of the piezoresistor, the breakdown, the burnout and other failure phenomena are easy to occur, and the stability and the reliability of the electrical performance of the piezoresistor can be improved.
(II) technical scheme
In order to achieve the above purpose, the application is realized by the following technical scheme:
an internally coated silica gel type piezoresistor and a preparation method thereof, comprising
The ceramic chip, the lateral part of ceramic chip adheres to the silver electrode, just the surface of silver electrode is equipped with the tin soldering lug, the inside welding of tin soldering lug has the lead wire, the outside cladding of welding lead wire has epoxy, just epoxy is the chip welding back internal coating at ceramic chip surface, ceramic chip internal surface sets up the internal coating silica gel.
Preferably, the welding lead is a tinned copper steel covered wire, and the tin soldering sheet is a lead-free soldering tin material.
Preferably, the ceramic chip is in a disc structure, and the diameter of the ceramic chip is 10mm-25mm.
A silica gel-coated piezoresistor and a preparation method thereof, the preparation steps are as follows:
step one: preparing a ceramic chip, pulping and grinding metal oxide in a ball milling tank, spraying and granulating, and sintering after molding to obtain the ceramic chip;
step two: preparing a ceramic resistor chip, brushing silver on the outer part of the ceramic chip, then firing silver to form a silver electrode, and testing the electrical performance parameters such as voltage-sensitive voltage, leakage current, voltage ratio and the like of the resistor;
step three: preparing a piezoresistor, welding a lead on the surface of the ceramic resistor chip through a tin soldering lug, internally coating silica gel, and coating by using an epoxy resin encapsulation layer to form the piezoresistor;
step four: and testing the piezoresistor, marking the outer surface of the piezoresistor after encapsulation and solidification by using laser, spraying and printing specification and model, retesting the voltage-sensitive voltage, leakage current, voltage ratio and other electrical performance parameters of the tested resistor, and selecting the appearance and cutting pins.
Preferably, the metal oxide is prepared by firing one or more oxides of zinc oxide, bismuth trioxide, nickel oxide, cobalt oxide, chromium oxide, manganese carbonate, antimony trioxide and the like.
Preferably, the sintering temperature is 1020-1180 ℃.
Preferably, the silver electrode is prepared by screen printing molecular silver paste, and reducing at 560-600 ℃ to make the ceramic chip compatible with the molecular silver layer.
Preferably, the internal coating silica gel is a polymer silicone rubber composite material, and has good heat conduction performance, flame retardance, moisture resistance, insulation and pressure resistance.
Preferably, the internal coating silica gel mainly comprises silicone resin and solvent, and comprises the following components in percentage by mass: the content of the silicon resin is 40-50%, and the balance is solvent.
(III) beneficial effects
According to the application, the silica gel is internally coated after the piezoresistor is welded, so that the insulation effect can be effectively achieved, the reduction of the electrical performance of the piezoresistor caused by carbonization of epoxy resin is prevented, meanwhile, the internally coated silica gel has the characteristics of strong heat conduction capacity and insulation and voltage resistance, the lightning surge resistance of the resistor can be improved, the service life of the resistor is prolonged, the failure rate of the product is reduced, and the reliability and stability of the product are improved. Under the double-layer protection of the internal coating silica gel and the epoxy resin, the piezoresistor has a stable working environment in the circuit, and the hidden trouble that the whole circuit is burnt out due to the failure breakdown of the chip is avoided.
Drawings
The foregoing description is only an overview of the present application, and is intended to provide a better understanding of the present application, as it is embodied in the following description, with reference to the preferred embodiments of the present application and the accompanying drawings.
FIG. 1 is a half-sectional view of a silica gel-coated varistor according to the present application.
Legend description: 1. internally coating silica gel; 2. a silver electrode; 3. a tin soldering lug; 4. an epoxy resin; 5. a lead wire; 6. and a ceramic chip.
Detailed Description
According to the embodiment of the application, the problem of high-temperature heat dissipation in the prior art is solved by providing the internally coated silica gel type piezoresistor and the preparation method thereof, so that the piezoresistor has a stable working environment in a circuit under the double-layer protection of the internally coated silica gel and the epoxy resin, and the hidden trouble that the whole circuit is burnt out due to the failure breakdown of a chip is avoided.
Example 1
The technical scheme in the embodiment of the application aims to solve the problem of heat dissipation of the chip, and the overall thought is as follows:
aiming at the problems existing in the prior art, the application provides an internal coating silica gel type piezoresistor, which comprises
The ceramic chip 6, silver electrode 2 is attached to the lateral part of ceramic chip 6, just silver electrode 2's surface is equipped with tin soldering lug 3, tin soldering lug 3 is leadless soldering tin material, the inside welding of tin soldering lug 3 has lead 5, welded lead 5 is tinned copper steel wire.
The outside of the welding lead 5 is coated with epoxy resin 4, the epoxy resin 4 is internally coated on the outer surface of the ceramic chip 6 after chip welding, and the inner surface of the ceramic chip 6 is provided with internally coated silica gel 1. The ceramic chip 6 has a disc structure.
A silica gel-coated piezoresistor and a preparation method thereof, the preparation steps are as follows:
step one: preparing a ceramic chip 6, pulping and grinding metal oxide in a ball milling tank, spraying and granulating, and sintering after molding to obtain the ceramic chip 6;
step two: preparing a ceramic resistor chip, brushing silver on the outer part of the ceramic chip 6, then firing silver to form a silver electrode 2, and testing the electrical performance parameters of the resistor, such as voltage-sensitive voltage, leakage current, voltage ratio and the like;
step three: preparing a piezoresistor, welding a lead 5 on the surface of the ceramic resistor chip through a tin soldering lug 3, internally coating silica gel, and coating by using an epoxy resin encapsulation layer 4 to form the piezoresistor;
step four: and testing the piezoresistor, marking the outer surface of the piezoresistor after encapsulation and solidification by using laser, spraying and printing specification and model, retesting the voltage-sensitive voltage, leakage current, voltage ratio and other electrical performance parameters of the tested resistor, and selecting the appearance and cutting pins.
The metal oxide is prepared by firing one or more of zinc oxide, bismuth trioxide, nickel oxide, cobalt oxide, chromium oxide, manganese carbonate, antimony trioxide and the like, and the sintering temperature is 1020-1180 ℃.
And (3) after the silica gel 1 is coated on the inner surface of the welded ceramic chip, encapsulating the epoxy resin 4, and then preserving the heat for 1-2 hours at the temperature of 150-160 ℃ for curing to obtain the ceramic chip.
The silver electrode 2 is prepared by screen printing molecular silver paste, and reducing at 560-600 ℃ to make the ceramic chip 6 compatible with the molecular silver layer.
The internal coating silica gel 1 is made of a high molecular silicon rubber composite material, and the internal coating silica gel 1 has good heat conduction performance, flame retardance, moisture resistance, insulation and pressure resistance.
The internally coated silica gel 1 mainly comprises silicon resin and a solvent, and comprises the following components in percentage by mass: the content of the silicon resin is 40-50%, and the balance is solvent.
The diameter of the ceramic chip 6 is 10mm-25mm, the diameter of the piezoresistor is 10mm, the voltage-sensitive voltage is 562V, the green epoxy resin encapsulation layer 4 is encapsulated, no silica gel is coated after the chip is welded, and the rest structure is unchanged.
Example 2
The diameter of the piezoresistor is 10mm, the voltage-sensitive voltage is 562V, the green epoxy resin encapsulation layer 4 encapsulates the piezoresistor, the chip is internally coated with silica gel after being welded, and the rest structure is unchanged.
Example 3
The diameter of the piezoresistor is 14mm, the voltage-sensitive voltage is 685V, the green epoxy resin encapsulation layer 4 is encapsulated, no silica gel is coated after the chip is welded, and the rest structure is unchanged.
Example 4
The diameter of the piezoresistor is 14mm, the voltage-sensitive voltage is 685V, the green epoxy resin encapsulation layer 4 is encapsulated, the chip is internally coated with silica gel after being welded, and the rest structure is unchanged.
The die-bonding of example 1 and example 3 was performed without internally coating silica gel 1, and the die-bonding of example 2 and example 4 was performed with a varistor internally coated with silica gel 1, and the lightning current impulse performance test results are shown in the following table:
according to the table, the varistor with the silica gel is coated can be enabled to have small leakage current change after lightning current surge, and in lightning current surge performance, the varistor has better performance than the common varistor encapsulated by epoxy resin.
It is apparent that the above examples are only illustrative of the present application and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present application.
Claims (10)
1. An internally coated silica gel type piezoresistor is characterized in that: including ceramic chip (6), silver electrode (2) are attached to the lateral part of ceramic chip (6), just silver electrode (2)'s surface is equipped with tin soldering lug (3), tin soldering lug (3) inside welding has lead wire (5), the outside cladding of welding lead wire (5) has epoxy (4), just epoxy (4) are interior scribble at ceramic chip (6) surface after the chip welding, ceramic chip (6) internal surface sets up interior scribbles silica gel (1).
2. An internally coated silica gel varistor as claimed in claim 1, wherein: the ceramic chip (6) is of a disc structure, and the diameter of the ceramic chip (6) is 10mm-25mm.
3. An internally coated silica gel varistor as claimed in claim 1, wherein: the welding lead (5) is a tinned copper steel covered wire.
4. An internally coated silica gel varistor as claimed in claim 1, wherein: the tin soldering sheet (3) is made of lead-free tin soldering material.
5. The silica gel-coated varistor as claimed in claim 1, wherein the preparation method comprises the steps of:
step one: preparing a ceramic chip (6), pulping and grinding metal oxide in a ball milling tank, then spraying and granulating, and then sintering after molding to obtain the ceramic chip (6);
step two: preparing a ceramic resistor chip, brushing silver on the outer part of the ceramic chip (6), then firing silver to form a silver electrode (2), and testing the electrical performance parameters such as voltage-sensitive voltage, leakage current, voltage ratio and the like of the resistor;
step three: preparing a piezoresistor, welding a lead (5) on the surface of the ceramic resistor chip through a tin soldering lug (3), internally coating silica gel, and coating by using an epoxy resin encapsulation layer (4) to form the piezoresistor;
step four: and testing the piezoresistor, marking the outer surface of the piezoresistor after encapsulation and solidification by using laser, spraying and printing specification and model, retesting the voltage-sensitive voltage, leakage current, voltage ratio and other electrical performance parameters of the tested resistor, and selecting the appearance and cutting pins.
6. The silica gel-coated varistor of claim 5 and the method for making the same, wherein: the metal oxide is prepared by firing one or more of zinc oxide, bismuth trioxide, nickel oxide, cobalt oxide, chromium oxide, manganese carbonate, antimony trioxide and the like, and the sintering temperature is 1020-1180 ℃.
7. The silica gel-coated varistor of claim 6 and the method for making the same, wherein: and (3) after the silica gel (1) is coated on the welded ceramic chip, encapsulating the epoxy resin (4), and then preserving the heat for 1-2 hours at 150-160 ℃ to obtain the ceramic chip.
8. The silica gel-coated varistor of claim 2 and the method for making the same, wherein: the silver electrode (2) is prepared by screen printing molecular silver paste, and reducing at 560-600 ℃ to make the ceramic chip (6) compatible with the molecular silver layer.
9. The silica gel-coated varistor of claim 5 and the method for making the same, wherein: the inner coated silica gel (1) is a polymer silicon rubber composite material.
10. The silica gel-coated varistor of claim 9 and the method for making same, wherein: the internally coated silica gel (1) mainly comprises silicon resin and a solvent, and comprises the following components in percentage by mass: the content of the silicon resin is 40-50%, and the balance is solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311030835.7A CN116994845A (en) | 2023-08-16 | 2023-08-16 | Internal silica gel-coated piezoresistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311030835.7A CN116994845A (en) | 2023-08-16 | 2023-08-16 | Internal silica gel-coated piezoresistor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116994845A true CN116994845A (en) | 2023-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311030835.7A Pending CN116994845A (en) | 2023-08-16 | 2023-08-16 | Internal silica gel-coated piezoresistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116994845A (en) |
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2023
- 2023-08-16 CN CN202311030835.7A patent/CN116994845A/en active Pending
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