CN116988049B - Chemical vapor deposition equipment and method - Google Patents
Chemical vapor deposition equipment and method Download PDFInfo
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- CN116988049B CN116988049B CN202311230399.8A CN202311230399A CN116988049B CN 116988049 B CN116988049 B CN 116988049B CN 202311230399 A CN202311230399 A CN 202311230399A CN 116988049 B CN116988049 B CN 116988049B
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000001179 sorption measurement Methods 0.000 claims abstract description 89
- 239000000463 material Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 238000004804 winding Methods 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 77
- 239000000110 cooling liquid Substances 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 239000007789 gas Substances 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 239000012495 reaction gas Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920000049 Carbon (fiber) Polymers 0.000 description 4
- 239000004917 carbon fiber Substances 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009417 prefabrication Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application relates to the technical field of semiconductor processing, and provides chemical vapor deposition equipment and a chemical vapor deposition method, wherein the chemical vapor deposition equipment comprises a furnace body, and a forming area for depositing semiconductor materials is arranged in the furnace body; the wire winding device comprises an adsorption wire and a wire winding and unwinding mechanism connected with the adsorption wire, the adsorption wire is arranged in the furnace body and penetrates through a processing area of a hole to be processed in the forming area, and the wire winding and unwinding mechanism is used for driving the adsorption wire to continuously move or intermittently move relative to the processing area so that the semiconductor material is formed with the hole in the processing area. The chemical vapor deposition equipment solves the problem that holes are difficult to process on semiconductor materials in the prior art, and can improve the hole processing efficiency and the yield.
Description
Technical Field
The present disclosure relates to semiconductor processing technology, and in particular, to a chemical vapor deposition apparatus and a method.
Background
Silicon carbide (SiC) materials, which are excellent third-generation semiconductor materials, have the advantages of high heat conductivity, plasma etching resistance, oxidation resistance, abrasion resistance, corrosion resistance, high-temperature stability, and the like, and particularly have the excellent characteristic of hardly generating particle pollution in a plasma etching manufacturing process. The semiconductor equipment components prepared from the silicon carbide material, such as Edge rings (Edge rings), focus rings (Focus rings) and electrodes in an etching machine, bases used by chemical vapor deposition equipment and the like, effectively improve the service cycle and quality of the components, and the silicon carbide material becomes one of important advantages of work-done volume production and yield assurance in the semiconductor field.
With the continuous development of semiconductor manufacturing process in the future, the application requirements for silicon carbide components will become more and more extensive, which also means that the requirements for special processing structures of silicon carbide components, such as hole processing, will also increase. Because of the high hardness and brittle nature of silicon carbide materials, hole processing is always a difficult problem in industry, when a conventional diamond drill bit is adopted for processing, the defects of difficult chip removal, poor cooling effect, rapid cutter abrasion and the like are overcome, and most importantly, as the hardness of silicon carbide is inferior to that of diamond, silicon carbide particles which are not discharged in time in the processing process can seriously damage the inner wall of a hole, and even the processing aperture is uneven. In summary, conventional processing means are costly, inefficient and low yield. In order to solve the problem, there are some improvements in the prior art at the process and equipment level, such as double-sided processing, laser processing, ultrasonic-plasma processing, etc., but all have problems of high cost or difficult industrialization.
Disclosure of Invention
In view of the foregoing, embodiments of the present application provide a chemical vapor deposition apparatus and a method for solving the problem of difficulty in processing holes of semiconductor materials typified by silicon carbide in the background art.
In a first aspect, embodiments of the present application provide a chemical vapor deposition apparatus, including:
the vapor deposition device comprises a furnace body, wherein a substrate for depositing semiconductor materials is arranged in the furnace body, the semiconductor materials are provided with through holes, and copying substrate prefabricated holes are arranged at positions of the substrate corresponding to the through holes;
the wiring device comprises an adsorption line and a take-up and pay-off mechanism, the adsorption line penetrates through the substrate prefabricated hole, and the take-up and pay-off mechanism is used for driving the adsorption line to move so that the semiconductor material is formed into the through hole at the same time of forming.
According to the chemical vapor deposition equipment provided by the embodiment of the application, a semiconductor material is molded by adopting a chemical vapor deposition technology, a through hole to be processed is formed in a molding area of the semiconductor material, and the semiconductor material deposited in the processing area is continuously taken away by arranging an adsorption line which continuously moves at the through hole. Thus, when the chemical vapor deposition process is finished, holes are formed in the formed semiconductor material at positions corresponding to the processing areas, the problem that holes are difficult to process on the semiconductor material in the prior art is solved, and the hole processing efficiency and the yield can be improved.
With reference to the first aspect of the present application, in an optional implementation manner, the winding and unwinding mechanism includes:
the paying-off wheel is used for paying out the coiled adsorption wire;
the wire winding wheel is used for coiling and retracting the adsorption wire;
the wiring device further comprises a winding and unwinding guide wheel assembly, and the winding and unwinding guide wheel assembly is used for guiding the trend of the adsorption wire.
The winding and unwinding mechanism of the alternative scheme can be convenient for store the adsorption wire with long length by arranging the paying-off wheel and the winding wheel, and prevents the adsorption wire from winding in the moving process. The wire winding and unwinding guide wheel assembly can conveniently adjust the wiring path of the adsorption wire, so that the adsorption wire can more accurately pass through the through hole.
With reference to the first aspect of the present application, in an optional implementation manner, the routing device further includes:
the wire cavity is positioned outside the furnace body and is provided with a first cavity for accommodating the wire winding and unwinding mechanism;
the wire inlet guide cylinder and the wire outlet guide cylinder are connected with the wire cavity at one end, extend to the inside of the furnace body at the other end and are respectively provided with a second cavity, and the second cavities are communicated with the first cavities;
the wire inlet guide cylinder and one end of the wire outlet guide cylinder, which is positioned in the furnace body, are provided with wire holes for the adsorption wires to enter the furnace body from the second cavity.
The wiring device of this alternative scheme can protect inside receive and release line mechanism through above part, avoids contacting reaction gas and influences the use.
In combination with the first aspect of the present application, in an alternative embodiment, a sidewall of the wire cavity is provided with an inflation inlet. The inflation inlet is used for connecting an inflation device, such as an air pump, and the first cavity and the second cavity are kept in a positive pressure state relative to the interior of the furnace body by inflating the inflation inlet.
With reference to the first aspect of the present application, in an optional implementation manner, an interlayer is disposed in a side wall of the incoming wire guide cylinder and the outgoing wire guide cylinder, cooling liquid can circulate in the interlayer, and a cooling liquid inlet and a cooling liquid outlet are disposed at one end of the incoming wire guide cylinder and the outgoing wire guide cylinder, which is located outside the furnace body. This structure ensures that the second cavity is not affected by high temperatures.
With reference to the first aspect of the present application, in an optional embodiment, a shape of the routing hole is set according to a shape of the through hole; the winding and unwinding wire guide wheel assembly comprises a plurality of guide wheels, and the guide wheels corresponding to the wire routing holes are movably arranged on the mounting plate. With this alternative, through holes of various shapes can be processed, not limited to the processing of circular holes.
With reference to the first aspect of the present application, in an optional implementation manner, a plurality of wire slots are respectively provided on the paying-off wheel, the wire winding wheel and the guide wheel, and each wire slot accommodates one adsorption wire; the substrate prefabricated holes are provided with a plurality of adsorption lines, and the adsorption lines respectively penetrate through the corresponding substrate prefabricated holes. The scheme can realize the processing of the porous semiconductor material.
With reference to the first aspect of the present application, in an alternative embodiment, a plurality of routing devices are disposed around the vapor deposition device, so that the adsorption wires of the routing devices correspondingly pass through a plurality of substrate pre-holes around the substrate. The scheme can realize that a plurality of holes with far intervals are processed on the semiconductor material simultaneously.
In a second aspect, embodiments of the present application provide a chemical vapor deposition method, including the steps of:
s1, arranging an adsorption line in a chemical vapor deposition reaction chamber, and enabling the adsorption line to penetrate through a substrate prefabricated hole;
s2, in the process of forming the semiconductor material by chemical vapor deposition, controlling a take-up and pay-off mechanism to drive the adsorption line to continuously move or intermittently move so as to form a through hole on the semiconductor material.
According to the chemical vapor deposition method provided by the embodiment of the application, a semiconductor material is molded by adopting a chemical vapor deposition technology, a through hole to be processed is formed in a molding area of the semiconductor material, and the semiconductor material deposited in the processing area is continuously taken away by arranging an adsorption line which continuously moves at the through hole. Thus, when the chemical vapor deposition process is finished, holes are formed in the formed semiconductor material at positions corresponding to the processing areas, the problem that holes are difficult to process on the semiconductor material in the prior art is solved, and the hole processing efficiency and the yield can be improved.
In combination with the second aspect of the present application, in an alternative embodiment,
the step S1 further comprises the step of adjusting the position of a guide wheel corresponding to the wiring hole;
when the substrate prefabricated hole is a straight hole or an inclined hole, enabling the axis of the adsorption line to coincide with the axis of the substrate prefabricated hole;
when the substrate prefabricated hole is a strip-shaped hole, the guide wheel is controlled to reciprocate, so that the adsorption line reciprocates along the length direction of the substrate prefabricated hole.
This alternative can facilitate the formation of inclined or bar-shaped holes in the semiconductor material, and is no longer limited to the processing of straight holes.
According to the chemical vapor deposition equipment and the chemical vapor deposition method, a semiconductor material is formed by adopting a chemical vapor deposition technology, a processing area of a hole to be processed is arranged in a forming area of the semiconductor material, and the semiconductor material deposited in the processing area is continuously taken away by arranging an adsorption line which moves continuously in the processing area. Thus, when the chemical vapor deposition process is finished, holes are formed in the formed semiconductor material at positions corresponding to the processing areas, the problem that holes are difficult to process on the semiconductor material in the prior art is solved, and the hole processing efficiency and the yield can be improved.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition apparatus according to embodiments 1 and 2 of the present application;
fig. 2 is a schematic cross-sectional structure of the routing device provided in embodiments 1 and 2 of the present application;
FIG. 3 is a schematic view of the processing area of the semiconductor material forming region and holes provided in examples 1 and 2 of the present application;
fig. 4 is a schematic diagram of an arrangement mode of a routing device of a semiconductor material having a plurality of holes according to embodiment 1 of the present application.
The reference numerals in the figures are:
1. a first air inlet;
2. a furnace body;
2-1 mounting through holes;
3. a substrate;
3-1, prefabricating holes in the substrate;
4. a substrate stage;
5. an exhaust port;
6. a second air inlet;
7. a wiring device;
7-1 wire cavity;
7-10 adsorption lines;
7-11 outlet guide cylinders;
7-12 inlet wire guide cylinders;
7-13 wiring holes;
7-2 take-up pulley;
7-3 paying-off wheels;
7-4 charging ports;
7-5-1 cooling liquid inlet port;
7-5-2 cooling liquid outlets;
7-6, a first wire collecting guide wheel;
7-7, a first paying-off guide wheel;
7-8 second take-up guide wheels;
7-9 second paying-off guide wheels;
8. a molding region;
9. and a through hole.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application may be practiced without one or more of these details. In other instances, well-known features have not been described in detail so as not to obscure the application; that is, not all features of an actual implementation are described in detail herein, and well-known functions and constructions are not described in detail.
Spatially relative terms, such as "under … …," "under … …," "below," "under … …," "above … …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under … …" and "under … …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
For a thorough understanding of the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical aspects of the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other implementations in addition to these detailed descriptions.
Example 1
The present embodiment provides a chemical vapor deposition apparatus, as shown in fig. 1 to 3, including:
the vapor deposition device comprises a furnace body 2, wherein a substrate 3 for depositing semiconductor materials is arranged in the furnace body 2, the semiconductor materials are provided with through holes 9, and a copying substrate prefabricated hole 3-1 is arranged at the position of the substrate 3 corresponding to the through holes 9;
the wiring device 7, the wiring device 7 comprises an adsorption line 7-10 and a take-up and pay-off mechanism, the adsorption line 7-10 penetrates through the substrate prefabricated hole 3-1, and the take-up and pay-off mechanism is used for driving the adsorption line 7-10 to move so that the semiconductor material is formed into a through hole 9 at the same time of molding.
The chemical vapor deposition equipment of the embodiment has the following working principle: firstly, forming a semiconductor material by adopting a chemical vapor deposition technology, arranging a processing area of a through hole 9 to be processed in a forming area 8 of the semiconductor material, and continuously taking away the semiconductor material deposited in the processing area by arranging an adsorption line 7-10 which moves continuously in the processing area. Thus, when the chemical vapor deposition process is finished, the positions of the formed semiconductor material corresponding to the through holes 9 are not subjected to atomic deposition, so that holes are formed, the problem that holes are difficult to process on the semiconductor material in the prior art is solved, and the hole processing efficiency and the yield can be improved. According to the scheme, from the aspect of semiconductor material growth, holes meeting the requirements are formed in the semiconductor material growth process, and after the growth is finished, only the inner walls of the holes are required to be polished, so that the problems of high cutter loss, uneven aperture and low processing efficiency in the conventional processing process can be greatly solved.
It should be noted that, the inner wall of the hole formed by the chemical vapor deposition apparatus in this embodiment is generally not smooth, and if there is a requirement for smoothness, flatness, etc. of the inner wall of the hole, a subsequent polishing process is required. The semiconductor material actually used in this embodiment is silicon carbide. The direction of the adsorption line 7-10 is along the axial direction of the hole to be processed, and the movement mode of the adsorption line 7-10 can be continuous movement at a specific speed along the axial direction, or can be non-constant speed, or can be stop for a certain time after moving for a certain time, or can be understood that the moving frequency, speed and the like of the wiring can be adjusted, in any case, continuous movement or intermittent movement relative to the through hole 9 needs to be performed in the whole forming process of the forming area 8, so that the adsorption line 7-10 is not solidified by the reaction gas and then is fixed in the through hole 9.
The structure of a vapor deposition apparatus actually used in this embodiment is shown in fig. 1, and includes:
a first gas inlet 1 and a second gas inlet 6 for delivering a mixed gas containing a precursor and other reaction gases into the furnace body 2;
the furnace body 2 is used for precursor and other reaction gases to react and deposit in the interior;
a substrate 3 on which a reactive gas is deposited. Decomposing the precursor into carbon/silicon atoms and atomic groups at high temperature, and finally depositing the carbon/silicon atoms and atomic groups on a substrate to form a silicon carbide material;
a substrate stage 4 for stably holding the substrate 3;
and the exhaust port 5 is used for exhausting mixed substances containing unreacted precursor, gas, reaction products and other byproducts from the furnace body 2, so that new precursor and other reaction gases can enter the furnace body 2 conveniently.
Optionally, as shown in fig. 2, the chemical vapor deposition apparatus of the embodiment includes:
a paying-off wheel 7-3 for paying out the coiled adsorption wire 7-10;
the take-up pulley 7-2 is used for coiling and retracting the adsorption wire 7-10;
the wiring device 7 further comprises a take-up and pay-off guide wheel assembly, and the take-up and pay-off guide wheel assembly is used for guiding the trend of the adsorption wires 7-10.
According to the winding and unwinding mechanism of the alternative scheme, the winding and unwinding wheel 7-3 and the winding wheel 7-2 are arranged, so that the adsorption wire 7-10 with a long length can be conveniently stored, and winding of the adsorption wire 7-10 in the moving process is prevented. The wire winding and unwinding guide wheel assembly can conveniently adjust the wiring path of the adsorption wire 7-10, so that the adsorption wire 7-10 can pass through the through hole 9 more accurately.
Optionally, as shown in fig. 2, the chemical vapor deposition apparatus of the present embodiment, the routing device 7 further includes:
the wire cavity 7-1 is positioned outside the furnace body 2, and the wire cavity 7-1 is provided with a first cavity for accommodating the wire winding and unwinding mechanism; the wire cavity 7-1 is used for constructing a cavity separated from the interior of the furnace body 2 so that the internal mechanism is free from the influence of chemical vapor deposition reaction gas;
the wire inlet guide cylinder 7-12 and the wire outlet guide cylinder 7-11, wherein one end of the wire inlet guide cylinder 7-12 and one end of the wire outlet guide cylinder 7-11 are connected with the wire cavity 7-1, and the other end of the wire inlet guide cylinder extends to the inside of the furnace body 2 and is provided with a second cavity which is communicated with the first cavity;
the side wall of the furnace body 2 is provided with at least one mounting through hole 2-1, and the incoming wire guide cylinder 7-12 and the outgoing wire guide cylinder 7-11 are arranged in the at least one mounting through hole 2-1; the wire inlet guide cylinder 7-12 and the wire outlet guide cylinder 7-11 have the function of extending the second cavity into the inner side of the side wall of the furnace body 2 so as to be close to the processing area inside the furnace body 2;
one end of the inlet wire guide cylinder 7-12 and one end of the outlet wire guide cylinder 7-11, which are positioned in the furnace body 2, are provided with wire holes 7-13 for the adsorption wires 7-10 to enter the furnace body 2 from the second cavity. The routing holes 7-13 serve to provide a space through which the adsorption wires 7-10 pass, while also preventing a large amount of reaction gas in the furnace body 2 from invading into the second cavity.
The wiring device 7 of the alternative scheme can protect the internal winding and unwinding mechanism through the components, and avoid the influence on use caused by contact with reaction gas.
Optionally, as shown in fig. 1, in the chemical vapor deposition apparatus of this embodiment, a substrate 3 is disposed inside a furnace body 2, the substrate 3 is used to generate a molding area 8, a substrate pre-fabricated hole 3-1 corresponding to a through hole 9 is formed in the substrate 3, and the substrate pre-fabricated hole 3-1 is provided for an adsorption line 7-10 to pass through. The substrate 3 has the function of facilitating deposition of the reaction gas thereon, the reaction gas in the furnace body 2 is easily accumulated at the forming region 8 on the substrate 3, and the substrate 3 is provided with the substrate pre-forming holes 3-1 which can facilitate the penetration of the adsorption line 7-10 so that the adsorption line 7-10 can move. Preferably, the substrate 3 and the substrate carrier 4 are made of high-purity graphite materials, which can be stably used in the furnace body 2, and the high-purity graphite materials are simpler in processing the substrate prefabricated holes 3-1 due to hardness property, and are suitable as the materials of the substrate 3 in the embodiment. For specific production requirements, a substrate pre-fabricated hole 3-1 slightly smaller than the required hole diameter is required to be pre-fabricated on the substrate 3 at a position corresponding to the processing region 9 according to the hole diameter requirement. The method for installing the adsorption line 7-10 in the furnace body 2 comprises the following steps: the adsorption wire 7-10 is led in from the outside of the furnace body 2, so that the adsorption wire 7-10 passes through the substrate prefabricated hole 3-1 and is led out from the inside of the furnace body 2 to the outside of the furnace body 2.
Alternatively, as shown in fig. 2, the chemical vapor deposition apparatus of the present embodiment is provided with an inflation inlet 7-4 on the sidewall of the line cavity 7-1. The inflation inlet 7-4 is used for connecting an inflation device, such as an air pump, and the inflation inlet 7-4 is used for inflating the first cavity and the second cavity, so that the first cavity and the second cavity keep a positive pressure state relative to the interior of the furnace body 2, gas in the furnace body 2 can be effectively prevented from entering the first cavity and the second cavity, and the wire winding and unwinding mechanism is protected.
Optionally, as shown in fig. 2, an interlayer is disposed in the side walls of the inlet wire guide cylinder 7-12 and the outlet wire guide cylinder 7-11, cooling liquid can circulate in the interlayer, and one ends of the inlet wire guide cylinder 7-12 and the outlet wire guide cylinder 7-11 located outside the furnace body 2 are provided with a cooling liquid inlet 7-5-1 and a cooling liquid outlet 7-5-2. Since the furnace body 2 is in a high-temperature environment, the inlet wire guide cylinder 7-12 and the outlet wire guide cylinder 7-11 can be protected by flowing cooling liquid in the interlayer in order to ensure that the second cavity is not affected by high temperature.
Alternatively, the chemical vapor deposition apparatus of the present embodiment has the shape of the wiring holes 7 to 13 set according to the shape of the through holes 9; the winding and unwinding wire guide wheel assembly comprises a plurality of guide wheels, and the guide wheels corresponding to the wire holes 7-13 are movably arranged on the mounting plate. In this alternative, for example, the through hole 9 is in the shape of a bar, the preformed holes 3-1 of the substrate and the routing holes 7-13 are arranged as bar holes to provide a space for lateral movement of the adsorption line 7-10, as shown in fig. 2, the adsorption line 7-10 is arranged vertically in this embodiment, and the substrate 3 is arranged horizontally, so it can be understood that the through hole 9 illustrated in this embodiment is parallel to the axial direction of the molding region 8 of the semiconductor material; if holes inclined relative to the axial direction of the semiconductor material are required to be processed, the inclined arrangement of the adsorption wires 7-10 is required to be adjusted, and movable guide wheels corresponding to the wiring holes 7-13 can be convenient for adjusting the inclined angle of the adsorption wires 7-10, so that more movable guide wheels are more convenient. In addition, if a strip-shaped hole needs to be machined, at least one guide wheel is required to drive the adsorption wire 7-10 to transversely move. This example illustrates the following method of guide wheel movement: a sliding rail is arranged between the guide wheel and the mounting plate, so that the guide wheel can move along the sliding rail; or, the guide wheel is connected with a cam of a cam mechanism on the mounting plate, and the guide wheel moves when the cam rotates.
Alternatively, the material of the adsorption line 7-10 of the chemical vapor deposition apparatus of the present embodiment may be carbon fiber, silicon carbide fiber, or the like. These materials are less affected by high temperatures and at the same time do not easily affect the purity of the semiconductor material to be formed.
Alternatively, the chemical vapor deposition apparatus of the present embodiment may be provided with a plurality of wiring devices 7 to perform processing of a plurality of holes. For example, the paying-off wheel 7-3, the take-up wheel 7-2 and the guide wheel are provided with a plurality of wire grooves, and each wire groove is internally provided with an adsorption wire 7-10; the substrate pre-fabricated holes 3-1 are provided in plurality, and the adsorption lines 7-10 respectively pass through the corresponding substrate pre-fabricated holes 3-1. Or a wiring device 7 can be provided with a plurality of adsorption wires 7-10, and a plurality of groups of coiling and uncoiling mechanisms are adopted to realize the processing of a plurality of holes. As shown in fig. 4, a plurality of wiring devices 7 are provided around the vapor deposition device such that the suction lines 7-10 of the wiring devices 7 correspondingly pass through the plurality of substrate pre-holes 3-1 around the substrate 3.
Optionally, as shown in fig. 2, the chemical vapor deposition apparatus of this embodiment, the take-up and pay-off guide wheel assembly includes: the first wire collecting guide wheel 7-6 and the first wire releasing guide wheel 7-7 which are arranged in the first cavity can better guide the adsorption wire 7-10 into the second cavity; the device also comprises a second wire collecting guide wheel 7-8 and a second wire releasing guide wheel 7-9 which are arranged in the second cavity, and can better guide and introduce the adsorption wire 7-10 into the furnace body 2.
The embodiment provides a chemical vapor deposition method, which comprises the following steps:
s1, arranging an adsorption line 7-10 in a chemical vapor deposition reaction chamber, and enabling the adsorption line 7-10 to penetrate through a substrate prefabricated hole 3-1;
s2, in the process of forming the semiconductor material by chemical vapor deposition, controlling the take-up and pay-off mechanism to drive the adsorption wire 7-10 to continuously move or intermittently move so as to form the through hole 9 on the semiconductor material.
The method continuously takes away the semiconductor material deposited in the processing area by arranging an adsorption line 7-10 in the substrate prefabricated hole 3-1. Thus, when the chemical vapor deposition process is finished, the positions of the formed semiconductor material corresponding to the through holes 9 are not subjected to atomic deposition, so that holes are formed, the problem that holes are difficult to process on the semiconductor material in the prior art is solved, and the hole processing efficiency and the yield can be improved.
Alternatively, the chemical vapor deposition method of the present embodiment,
the step S1 also comprises the step of adjusting the position of the guide wheel corresponding to the wiring hole 7-13;
when the substrate prefabricated hole 3-1 is a straight hole or an inclined hole, enabling the axis of the adsorption line 7-10 to coincide with the axis of the substrate prefabricated hole 3-1;
when the substrate prefabricated hole 3-1 is a strip-shaped hole, the guide wheel is controlled to reciprocate, so that the adsorption line 7-10 reciprocates along the length direction of the substrate prefabricated hole 3-1. By this method, the processing of the strip-shaped holes of the semiconductor material can be realized, and the principle is that the adsorption line 7-10 in this scheme has not only axial movement but also lateral movement, and the path of the lateral movement is along the length direction of the strip-shaped holes, so that the deposition raw materials in the range of the strip-shaped holes are actually taken away.
Alternatively, in the chemical vapor deposition method of the present embodiment, in step S1, as shown in fig. 4, a plurality of routing devices 7 are disposed around the vapor deposition device, so that the adsorption wires 7-10 of the routing devices 7 correspondingly pass through a plurality of substrate pre-holes 3-1 around the substrate 3. When there are more holes in the semiconductor material, for example, vapor deposition silicon electrodes, the holes in the silicon electrodes are arranged in a central symmetry manner, and a plurality of corresponding routing devices 7 can be arranged around the vapor deposition device, and each routing device 7 forms a through hole 9 at a corresponding position.
Example 2
The present embodiment provides a chemical vapor deposition apparatus and a method for operating the same, in which fine holes having a diameter of 300 μm are formed in a graphite substrate 3 before the start of the process, the substrate 3 is firmly mounted on a substrate stage 4, and the levelness of the substrate 3 is adjusted. In the wiring device 7, carbon fibers with the diameter of 100 mu m and enough length are arranged on the paying-off wheel 7-3, and the carbon fibers are led out by wiring and sequentially pass through the first paying-off guide wheel 7-7 and the second paying-off guide wheel 7-9 and pass through a substrate prefabrication hole 3-1 prefabricated on the substrate 3. After passing through the substrate prefabrication hole 3-1, the substrate passes through the second wire collecting guide wheel 7-8 and the first wire collecting guide wheel 7-6 respectively, and finally is wound on the wire collecting wheel 7-2. After the installation work is finished, the furnace body 2 and the wire cavity 7-1 are closed, a cooling circulating water system of an interlayer in the side walls of the wire inlet guide cylinder 7-12 and the wire outlet guide cylinder 7-11 is started, the furnace body 2 is vacuumized to a certain vacuum degree, the furnace body 2 is heated to 1000-1500 ℃, and carrier gas hydrogen carries precursor methyltrichlorosilane to enter the furnace body 2 through the first air inlet 1 and the second air inlet 6. Meanwhile, the hydrogen gas is slowly introduced into the charging port 7-4, so that a large amount of precursor in the furnace body cannot flow into the line cavity 7-1. After the precursor enters the furnace body 2, the precursor is decomposed at high temperature, carbon/silicon atoms are subjected to a complex decomposition and adsorption reaction process, silicon carbide materials are slowly deposited on the surface of the substrate 3, a paying-off wheel 7-3 and a take-up wheel 7-2 in a wiring device 7 synchronously rotate clockwise, an adsorption wire 7-10 is controlled to move at a speed of 5mm/min, and a second take-up guide wheel 7-8 and a second paying-off guide wheel 7-9 control the adsorption wire 7-10 in a vertical direction. Carbon/silicon atoms around the prefabricated holes 3-1 of the substrate are continuously carried out by the carbon fiber adsorption line 7-10, so that the silicon carbide material is free from carbon/silicon atom deposition around the adsorption line 7-10 in the growth process, and the growth process is finished along with the thickening of the deposited silicon carbide material film layer to 11 mm. And taking out the silicon carbide material, finally forming a deep hole with the diameter of about 300 mu m on the silicon carbide material, and carrying out deepening processing on the inner wall of the hole by using a fine hole polishing tool to obtain the deep hole structure meeting the requirements.
It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the various features of the above embodiments may be combined arbitrarily to form further embodiments of the application that may not be explicitly described. Thus, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.
Claims (9)
1. A chemical vapor deposition apparatus, comprising:
the vapor deposition device comprises a furnace body (2), wherein a substrate (3) for depositing a semiconductor material is arranged in the furnace body (2), the semiconductor material is provided with a through hole (9), and a profiling substrate prefabricated hole (3-1) is arranged at the position of the substrate (3) corresponding to the through hole (9);
the wiring device (7), the wiring device (7) comprises an adsorption line (7-10) and a take-up and pay-off mechanism, the adsorption line (7-10) passes through the substrate prefabricated hole (3-1), and the take-up and pay-off mechanism is used for driving the adsorption line (7-10) to move so as to enable the semiconductor material to form the through hole (9) during molding;
the wiring device (7) further comprises: the wire cavity (7-1), the wire inlet guide cylinder (7-12) and the wire outlet guide cylinder (7-11); the wire cavity (7-1) is positioned outside the furnace body (2), and the wire cavity (7-1) is provided with a first cavity for accommodating the wire winding and unwinding mechanism; at least one mounting through hole (2-1) is formed in the wall of the furnace body (2), and the incoming wire guide cylinder (7-12) and the outgoing wire guide cylinder (7-11) are mounted in at least one mounting through hole (2-1); one end of the wire inlet guide cylinder (7-12) is connected with the wire cavity (7-1), the other end of the wire inlet guide cylinder extends to the inside of the furnace body (2), one end of the wire outlet guide cylinder (7-11) is connected with the wire cavity (7-1), the other end of the wire outlet guide cylinder extends to the inside of the furnace body (2), the wire inlet guide cylinder (7-12) and the wire outlet guide cylinder (7-11) are respectively provided with a second cavity, and the second cavities of the wire inlet guide cylinder (7-12) and the wire outlet guide cylinder (7-11) are respectively communicated with the first cavity;
the wire feeding guide cylinder (7-12) and one end of the wire discharging guide cylinder (7-11) which is positioned in the furnace body (2) are provided with wire feeding holes (7-13), and the wire feeding holes (7-13) are used for providing a space for the adsorption wire (7-10) to pass through.
2. The chemical vapor deposition apparatus according to claim 1, wherein the take-up and pay-off mechanism comprises:
a paying-off wheel (7-3) for paying out the coiled adsorption wire (7-10);
a take-up pulley (7-2) for coiling and retracting the adsorption wire (7-10);
the wiring device (7) further comprises a winding and unwinding guide wheel assembly, and the winding and unwinding guide wheel assembly is used for guiding the trend of the adsorption wires (7-10).
3. Chemical vapor deposition device according to claim 1, characterized in that the side wall of the wire cavity (7-1) is provided with a number of gas filling openings (7-4).
4. Chemical vapor deposition device according to claim 1, characterized in that an interlayer is arranged in the side walls of the inlet wire guide cylinder (7-12) and the outlet wire guide cylinder (7-11), cooling liquid can circulate in the interlayer, and one end of the inlet wire guide cylinder (7-12) and the outlet wire guide cylinder (7-11) which is positioned outside the furnace body (2) is provided with a cooling liquid inlet (7-5-1) and a cooling liquid outlet (7-5-2).
5. Chemical vapor deposition apparatus according to claim 2, characterized in that the shape of the routing holes (7-13) is set according to the shape of the through holes (9); the winding and unwinding guide wheel assembly comprises a plurality of guide wheels, and the guide wheels corresponding to the wiring holes (7-13) are movably arranged on the mounting plate.
6. The chemical vapor deposition device according to claim 5, wherein the paying-off wheel (7-3), the take-up wheel (7-2) and the guide wheel are provided with a plurality of wire slots, and each wire slot accommodates one adsorption wire (7-10); the substrate prefabricated holes (3-1) are provided with a plurality of adsorption lines (7-10) respectively penetrating through the corresponding substrate prefabricated holes (3-1).
7. Chemical vapor deposition apparatus according to any one of claims 1-6, characterized in that a plurality of said routing means (7) is arranged around the vapor deposition means such that the adsorption wires (7-10) of the routing means (7) correspondingly pass through a plurality of said substrate pre-holes (3-1) around the substrate (3).
8. A chemical vapor deposition method, characterized in that the chemical vapor deposition apparatus according to any one of claims 1 to 7 is used, comprising the steps of:
s1, arranging an adsorption line (7-10) in a chemical vapor deposition reaction chamber, and enabling the adsorption line (7-10) to penetrate through a substrate prefabricated hole (3-1);
s2, in the process of forming the semiconductor material by chemical vapor deposition, controlling a take-up and pay-off mechanism to drive the adsorption wire (7-10) to continuously move or intermittently move so as to form the through hole (9) on the semiconductor material.
9. The chemical vapor deposition method according to claim 8, wherein,
the step S1 also comprises the step of adjusting the position of a guide wheel corresponding to the wiring hole (7-13);
when the substrate prefabricated hole (3-1) is a straight hole or an inclined hole, enabling the axis of the adsorption line (7-10) to coincide with the axis of the substrate prefabricated hole (3-1);
when the substrate prefabricated hole (3-1) is a strip-shaped hole, the guide wheel is controlled to reciprocate, so that the adsorption line (7-10) reciprocates along the length direction of the substrate prefabricated hole (3-1).
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| CA762634A (en) * | 1967-07-04 | C. Marinage John | Semiconductor device fabrication | |
| CN102437092A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Semiconductor through hole forming method |
| CN105152687A (en) * | 2015-07-13 | 2015-12-16 | 清华大学 | Porous silicon carbide coating layer and production method thereof |
| CN111968910A (en) * | 2020-08-26 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Processing method of substrate in chip fan-out packaging structure |
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| US20050271811A1 (en) * | 2004-02-25 | 2005-12-08 | The Queen's University Of Belfast | Method of manufacturing nanostructure arrays |
| ITMI20070056A1 (en) * | 2007-01-17 | 2008-07-18 | Consiglio Nazionale Ricerche | SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE CONSTRUCTION OF ELECTRONIC E-O OPTOELECTRONIC AND RELATIVE PROCESS PROCESSING DEVICES |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA762634A (en) * | 1967-07-04 | C. Marinage John | Semiconductor device fabrication | |
| CN102437092A (en) * | 2011-08-04 | 2012-05-02 | 上海华力微电子有限公司 | Semiconductor through hole forming method |
| CN105152687A (en) * | 2015-07-13 | 2015-12-16 | 清华大学 | Porous silicon carbide coating layer and production method thereof |
| CN111968910A (en) * | 2020-08-26 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Processing method of substrate in chip fan-out packaging structure |
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