CN116981346A - Multicycle Ga 30 Sb 70 Sb composite phase-change film material and preparation method thereof - Google Patents
Multicycle Ga 30 Sb 70 Sb composite phase-change film material and preparation method thereof Download PDFInfo
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
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- 229910045601 alloy Inorganic materials 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
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- 239000008367 deionised water Substances 0.000 claims description 6
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- 239000010453 quartz Substances 0.000 claims description 6
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- 239000010703 silicon Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052787 antimony Inorganic materials 0.000 claims description 4
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- 239000012782 phase change material Substances 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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Abstract
The invention discloses a multicycle Ga 30 Sb 70 And Sb composite phase-change film material and its preparing process, and features that the film material is made of Ga 30 Sb 70 The thin film layers and the Sb thin film layers are alternately deposited and compounded, wherein Ga 30 Sb 70 The thickness of the thin film layer is 5-10nm, the thickness of the Sb thin film layer is 7-15nm, ga 30 Sb 70 The total thickness of the Sb multicycle phase change film material is 60-125nm, and the advantage is that the material has higher crystallization temperature and can stably work at higher temperature; it has only twoSpecies elements can effectively inhibit component segregation and obtain lower resistance drift coefficient, so that the reliability of device circulation is improved; the phase change memory has a faster phase change speed, and is beneficial to rapid data reading.
Description
Technical Field
The invention belongs to the phase change memory material technologyThe field, in particular, relates to a multicycle Ga 30 Sb 70 And Sb composite phase-change film material and a preparation method thereof.
Background
Phase Change Memories (PCM) based on chalcogenide have been considered by the industry to be the most promising alternative to flash memories as the dominant memory technology for the next generation of non-volatile memories due to their fast read and write speeds, high density storage capability, and compatibility with current CMOS processes. The SET operation (crystallization) and RESET operation (amorphization) of the PCM device may cause large resistance fluctuation, and there is a resistance drift phenomenon at room temperature, affecting the accuracy and stability of the memory device. Such as conventional Ge 2 Sb 2 Te 5 The (GST) -based phase change memory device has larger fluctuation of multi-data state resistance in the cyclic operation process, so that the RESET resistance has larger drifting behavior (the coefficient reaches 0.11 and is higher than an ideal value of 0.01), and the development and the application of the (GST) -based phase change memory device in high-precision and high-efficiency neuron computing devices are seriously restricted (IEEETrans. Electron Dev.2010, 57:2690-2696).
In view of this, researchers have decided to use cell materials instead of complex GST alloys as phase change media for phase change memories. Antimony (Sb) has semi-metallic properties in the crystalline state and semiconductor properties in the amorphous thin film state, the conductivity difference between the two states is obvious, the rapid conversion between the amorphous state and the crystalline state is easy to realize, and a pure Sb thin film with the thickness of 4nm shows an ultra-low resistance drift coefficient (v= -0.003). But pure Sb thin films have difficulty achieving stable amorphous states due to their explosive crystallization mechanism. The novel single element amorphous Sb is currently stable for only about 100 seconds at 60-70 ℃. Ga 30 Sb 70 The binary phase change memory material consists of gallium (Ga) and antimony (Sb) elements, has higher crystallization temperature, can meet the requirement of a device on thermal stability, and has slower phase change speed.
Disclosure of Invention
The invention aims to solve the technical problems of providing the multicycle Ga which has simple components, high crystallization temperature, low resistance drift coefficient, high crystallization speed and good thermal stability 30 Sb 70 And Sb composite phase-change film materialThe preparation method.
The technical scheme adopted for solving the technical problems is as follows: multicycle Ga 30 Sb 70 And Sb composite phase-change film material composed of Ga 30 Sb 70 The Ga film is formed by alternately depositing and compounding film layers and Sb film layers 30 Sb 70 The thickness of the thin film layer is 5nm-10nm, the thickness of the Sb thin film layer is 7nm-15nm, and the total thickness of the phase-change thin film material is 60-125nm.
Preferably, the Ga 30 Sb 70 The thickness of the thin film layer is 5nm, the thickness of the Sb thin film layer is 7nm, and the thickness of the phase-change thin film material is 60nm.
Preferably, the Ga 30 Sb 70 The thickness of the thin film layer is 10nm, the thickness of the Sb thin film layer is 7nm, and the thickness of the phase-change thin film material is 85nm.
Preferably, the Ga 30 Sb 70 The thickness of the thin film layer is 10nm, the thickness of the Sb thin film layer is 15nm, and the thickness of the phase-change thin film material is 125nm.
Preferably, the phase-change thin material is prepared by a magnetron sputtering method, and the substrate is Si/SiO 2 The sputtering target is Ga 30 Sb 70 And Sb.
Preferably, the Ga 30 Sb 70 The atomic ratio of Ga and Sb in the film layer material is 30:70.
The multicycle Ga 30 Sb 70 The preparation method of the Sb composite phase-change film material adopts a magnetron sputtering coating system and a double-target co-sputtering method, and specifically comprises the following steps:
(1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) Alloy Ga is used in a magnetron sputtering coating system 30 Sb 70 The target material is arranged in a magnetron No. 3 radio frequency sputtering target, and the simple substance Sb target material is arranged in a magnetron No. 1 direct current sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 -5 Pa or less;
(4) Then control alloy Ga 30 Sb 70 The sputtering power of the target is 40W, the sputtering power of the simple substance Sb target is 20W, argon is introduced, the flow is set to be 40SCCM, and the sputtering air pressure is 0.3Pa;
(5) Coating by using a coating monitoring program, changing the sputtering thickness by controlling the sputtering time, wherein the sputtering time of the Sb target is 60-90s, and Ga 30 Sb 70 Sputtering time of the target material is 60-120s, and closing Ga after coating is finished 30 Sb 70 The target radio frequency power supply and the Sb target direct current power supply obtain multicycle Ga 30 Sb 70 A Sb phase-change film material.
Preferably, the Ga 30 Sb 70 The purity of the target material is 99.99%, and the purity of the Sb target material is 99.9%.
Compared with the prior art, the invention has the advantages that: the invention relates to multicycle Ga 30 Sb 70 And Sb composite phase-change film material and preparation method thereof by alternately depositing Ga 30 Sb 70 And Sb form Ga 30 Sb 70 The multi-period structure of Sb is used for improving the amorphous thermal stability of the pure Sb film, reducing the long-distance element migration and diffusion of elements in the film by utilizing the interface effect between layers of the multi-period film, solving the problem that the amorphous resistance of the material gradually increases along with the time (the increase of the cycle number) and achieving the aim of greatly reducing the resistance drift. Among them, [ Ga ] is preferred 30 Sb 70 (10nm)/Sb(7nm)] 5 The resistance of the film decreases with increasing temperature until the crystallization temperature is 198 c, at which point the sudden decrease in film resistance indicates that a phase change from amorphous to crystalline has occurred. The resistance drift coefficient of the film is 0.0007, the crystallization activation energy is 3.8eV, the ten-year data retention is 123.3 ℃, and the conventional phase change material Ge 2 Sb 2 Te 5 The crystallization temperature of (GST) is about 160 ℃, the resistivity drift coefficient is about 0.08, the crystallization activation energy is about 2.98eV, and the ten-year data retention is about 88.9 ℃. The performance of the multi-period film is superior to that of GST, and the multi-period film is a potential phase change memory alternative material.And preferably [ Ga ] 30 Sb 70 (10nm)/Sb(7nm)] 5 The resistance drift coefficient of the film is only 0.0007 and is far smaller than 0.11 of GST, so that the resistance drift phenomenon of the phase change material in an amorphous state can be improved.
In summary, the invention relates to a multicycle Ga 30 Sb 70 And Sb composite phase-change film material and preparation method, taking traditional Sb material as phase-change matrix, introducing Ga from the phase-change matrix 30 Sb 70 The layer grows periodically under the nanometer scale, a series of binary multicycle phase change memory materials are prepared, and the materials have higher crystallization temperature and can stably work at higher temperature; the device has only two elements, can effectively inhibit component segregation, obtain lower resistance drift coefficient and improve the reliability of device circulation; the phase change memory has a relatively high phase change speed, and is beneficial to rapid data reading; the material is a binary Te-free environment-friendly material, has stable components and strong controllability, does not pollute a production line, and is convenient for processing and manufacturing of the process.
Drawings
FIG. 1 shows Ga obtained in example 1 30 Sb 70 Schematic structural diagram of Sb multicycle film material;
FIG. 2 shows different thickness of [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x 、Ga 30 Sb 70 And Sb film sheet resistance with temperature change curve
FIG. 3 shows different thickness of [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x A relationship curve of the film square resistance with time;
FIG. 4 shows different thickness of [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x Calculating the activation energy and data holding capacity of the film;
FIG. 5 is [ Ga 30 Sb 70 (5nm)/Sb(7nm)] 5 Film resistance change relation graph of film sample under different heating rates
FIG. 6 is [ Ga 30 Sb 70 (5nm)/Sb(7nm)] 5 Analysis of film crystallization kinetics
FIG. 7 is [ Ga 30 Sb 70 (10nm)/Sb(7nm)] 5 Film samples at different heating ratesA relation chart of film resistance along with temperature change;
FIG. 8 is [ Ga 30 Sb 70 (10nm)/Sb(7nm)] 5 Analysis of film crystallization kinetics.
Detailed Description
The invention is described in further detail below with reference to the embodiments of the drawings.
Multicycle Ga 30 Sb 70 And Sb composite phase-change film material, its chemical structural formula is [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x Wherein a=5 nm to 10nm, b=7 nm to 15nm, and x=5. The preparation process comprises the following steps: (1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) Alloy Ga is used in a magnetron sputtering coating system 30 Sb 70 The target material is arranged in a magnetron No. 3 radio frequency sputtering target, and the simple substance Sb target material is arranged in a magnetron No. 1 direct current sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 -5 Pa or less;
(4) Then control alloy Ga 30 Sb 70 The sputtering power of the target was 40W, and the sputtering power of the elemental Sb target was 20W. Argon (sputtering gas) is introduced, the flow is set to 40SCCM, and the sputtering pressure is 0.3Pa;
(5) Coating by using a coating monitoring program, changing the sputtering thickness by controlling the sputtering time, wherein the sputtering time of the Sb target is 60-90s, and Ga 30 Sb 70 Sputtering time of the target material is 60-120s, and closing Ga after coating is finished 30 Sb 70 The target radio frequency power supply and the Sb target direct current power supply obtain the deposited Ga 30 Sb 70 A thin film material with a multi-periodic structure of/Sb, which has a chemical structural formula of [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x Wherein a=5-10 nm, b=7-15 nm, x=5.
Example 1
Multicycle Ga 30 Sb 70 And Sb composite phase-change film material, its chemical structural formula is [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x Where a=5 nm, b=7nm, x=5. The preparation process comprises the following steps:
(1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) Alloy Ga is used in a magnetron sputtering coating system 30 Sb 70 The target material is arranged in a magnetron No. 3 radio frequency sputtering target, and the simple substance Sb target material is arranged in a magnetron No. 1 direct current sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 -5 Pa or less;
(4) Then control alloy Ga 30 Sb 70 The sputtering power of the target is 40W, and the sputtering power of the simple substance Sb target is 20W; argon (sputtering gas) is introduced, the flow is set to 40SCCM, and the sputtering pressure is 0.3Pa;
(5) Coating by using a coating monitoring program, changing the sputtering thickness by controlling the sputtering time, wherein the sputtering time of the Sb target is 60s, and Ga 30 Sb 70 Sputtering time of the target material is 60s, and closing Ga after coating is finished 30 Sb 70 The target radio frequency power supply and the Sb target direct current power supply, and the deposited Ga is obtained after the sputtering thickness reaches about 60nm 30 Sb 70 A thin film material with a multi-periodic structure of/Sb, which has a chemical structural formula of [ Ga ] 30 Sb 70 (5nm)/Sb(7nm)] 5 。
The prepared film material is subjected to in-situ resistance and temperature time test, the crystallization temperature is about 176 ℃, the ten-year data retention temperature is about 102.7 ℃, the crystallization activation energy is about 2.3eV, and the resistance drift coefficient is about 0.003; the average crystallization kinetics index, as determined by crystallization kinetics analysis, is about 0.92, which is the dominant crystallization mechanism in the growth regime.
Example 2
The difference from the above embodiment 1 is that: during the sputtering process, alloy Ga is controlled 30 Sb 70 The sputtering power of the target is 40W, the sputtering power of the simple substance Sb target is 20W, and the Sb target and Ga are sputtered alternately at room temperature 30 Sb 70 Sputtering time of the target Sb target material is 60s, ga 30 Sb 70 Target materialSputtering time is 120s, and after sputtering thickness reaches about 85nm, the deposited Ga is obtained 30 Sb 70 A thin film material with a multi-periodic structure of/Sb, which has a chemical structural formula of [ Ga ] 30 Sb 70 (10nm)/Sb(7nm)] 5 。
The prepared film material is subjected to in-situ resistance and temperature time test, the crystallization temperature is about 198 ℃, the ten-year data retention temperature is about 123.3 ℃, the crystallization activation energy is about 3.8eV, and the resistance drift coefficient is about 0.0007; the average crystallization kinetic index obtained by analysis of crystallization kinetics is about 1.09, which is a dominant crystallization mechanism of the growth type.
Example 3
The difference from the above embodiment 1 is that: during the sputtering process, alloy Ga is controlled 30 Sb 70 The sputtering power of the target is 40W, the sputtering power of the simple substance Sb target is 20W, and the Sb target and Ga are sputtered alternately at room temperature 30 Sb 70 Sputtering time of the target Sb target material is 90s, ga 30 Sb 70 Sputtering time of the target material is 120s, and after sputtering thickness is about 12nm, the deposited Ga is obtained 30 Sb 70 A thin film material with a multi-periodic structure of/Sb, which has a chemical structural formula of [ Ga ] 30 Sb 70 (10nm)/Sb(15nm)] 5 。
Comparative example 1
Preparation of monolayer Ga in this comparative example 30 Sb 70 The thickness of the phase change film material is about 50nm. The preparation method comprises the following steps: (1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) Alloy Ga is used in a magnetron sputtering coating system 30 Sb 70 The target material is arranged in the magnetic control No. 3 radio frequency sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 -5 Pa or less;
(4) Then control alloy Ga 30 Sb 70 The sputtering power of the target is 40W, argon (sputtering gas) is introduced, the flow is set to 40SCCM, and the sputtering air pressure is 0.3Pa;
(5) By coatingCoating film by monitoring program, changing sputtering thickness by controlling sputtering time, ga 30 Sb 70 Sputtering time of the target material is 600s, and closing Ga after coating is finished 30 Sb 70 And a target radio frequency power supply. Thus obtaining the Ga in a deposited state 30 Sb 70 A film material.
Comparative example 2
In this comparative example, a single-layer Sb phase-change thin film material was prepared, with a thickness of about 50nm. The preparation method comprises the following steps:
(1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) In a magnetron sputtering coating system, an elemental Sb target material is arranged in a magnetron No. 1 direct current sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 -5 Pa or less;
(4) Then the sputtering power of the elemental Sb target was controlled to be 20W. Argon (sputtering gas) is introduced, the flow is set to 40SCCM, and the sputtering pressure is 0.3Pa;
(5) Coating is carried out by using a coating monitoring program, the sputtering thickness is changed by controlling the sputtering time, the sputtering time of the Sb target is 300s, and after the coating is finished, the direct current power supply of the Sb target is turned off. And obtaining the deposited Sb film material.
2. Analysis of experimental results
Power parameters and prepared Ga 30 Sb 70 The specific composition of the Sb multicycle film sample is shown in table 1.
TABLE 1 Sb-S phase change film Material Components prepared under different conditions
The phase-change film prepared in the embodiment is subjected to an in-situ R-T test, the resistance change with time in an amorphous state and ten years of data retention.
FIG. 1 shows Ga obtained in example 1 30 Sb 70 Multilayer nanocomposite of/SbSchematic structural diagram of the film material. In the figure, n=6 represents that the number of layers, which is not shown, is 6. The substrate is Si/SiO 2 The sputtering target is Ga 30 Sb 70 And Sb. Alternatively sputtering Ga by using magnetron sputtering method 30 Sb 70 And Sb, cycle number of 5. Thus obtaining the Ga in a deposited state 30 Sb 70 A thin film material with a multi-periodic structure of/Sb, which has a chemical structural formula of [ Ga ] 30 Sb 70 (anm)/Sb(bnm)] x Where a=5 nm or 10nm, b=7 nm or 15nm, x=5.
FIG. 2 shows Ga is tested at a heating rate of 30 ℃/min 30 Sb 70 Resistance versus temperature of the Sb multicycle film. As can be seen from FIG. 2, ga 30 Sb 70 The Sb multicycle film has very high amorphous resistance (-10) 7 Omega), the deposited film has good thermal stability. Sb exhibits rapid succession of crystals from the start of heating. With increasing concentration, the crystallization temperature (T c ) Raised. The resistance of the film gradually decreases with increasing temperature until the respective T c When the sheet resistances suddenly drop, indicating that the film has achieved a phase change from amorphous to crystalline behavior. [ Ga 30 Sb 70 (5nm)/Sb(7nm)] 5 And [ Ga ] 30 Sb 70 (10nm)/Sb(7nm)] 5 T of (2) c The values are 176 ℃ and 198 ℃ respectively, and the temperature is obviously improved compared with the traditional GST (168 ℃).
FIG. 3 shows [ Ga 30 Sb 70 (5nm)/Sb(7nm)] 5 And [ Ga ] 30 Sb 70 (10nm)/Sb(7nm)] 5 The curve of the resistance of the film at 50 ℃ over time, i.e. the resistance drift curve. We can see that the sheet resistance changes slowly with increasing test time, however the magnitude of the change is not very pronounced. According to the formula, R (t) =r 0 (t/t 0 ) v Wherein R (t) is a sheet resistance at time t, R 0 Is t 0 The film resistance, v, at time is the resistance drift coefficient, we define the initial time t 0 When the resistance is changed after 1000 seconds, the resistance drift coefficient is 0.0007 and 0.003. The resistivity drift coefficient of the film material is higher than that of the traditional film materialIs hundreds of times lower (GST resistivity drift is about 0.08). This means Ga 30 Sb 70 The Sb multicycle film can be used for preparing an ultrastable phase change film material, so that the data stability and the safety of phase change storage are improved.
FIG. 4 gives the crystallization activation energy (E using the Arrhenius equation a ) And ten years data retention (T 10-year ) As a result of the highest temperature of (2). As can be seen from the figure, with Ga 30 Sb 70 The increase in layer thickness increases the crystallization activation energy and ten years data retention of the multicycle phase change material. Wherein Ga 30 Sb 70 The thin film material with the layer thickness of 10nm has higher ten-year data retention (123.3 ℃) and higher crystallization activation energy (3.8 eV) than GST (88.9 ℃,2.98 eV).
FIGS. 5 to 6 are [ Ga ] 30 Sb 70 (5nm)/Sb(7nm)] 5 The multi-period phase change film material has a film resistance change curve (figure 5) along with temperature and a crystallization dynamics analysis chart (figure 6) under different heating rates. The results showed an average crystallization kinetics index of 0.92, indicating that the film is still a growth-dominated crystallization mechanism, maintaining a faster crystallization rate.
FIGS. 7 to 8 are [ Ga ] 30 Sb 70 (10nm)/Sb(7nm)] 5 The film resistance of the multicycle phase change film material is changed along with the temperature (figure 7) and the crystallization dynamics analysis chart (figure 8) under different heating rates. The results showed an average crystallization kinetics index of 1.09, indicating that the film is still a growth-dominated crystallization mechanism, maintaining a faster crystallization rate.
The above description is not intended to limit the invention, nor is the invention limited to the examples described above. Variations, modifications, additions, or substitutions will occur to those skilled in the art and are therefore within the spirit and scope of the invention.
Claims (8)
1. Multicycle Ga 30 Sb 70 And Sb composite phase-change film material, characterized in that: it is made of Ga 30 Sb 70 The Ga film is formed by alternately depositing and compounding film layers and Sb film layers 30 Sb 70 The thickness of the thin film layer is 5nm-10nm, the thickness of the Sb thin film layer is 7nm-15nm, and the total thickness of the phase-change thin film material is 60-125nm.
2. A multicycle Ga according to claim 1 30 Sb 70 And Sb composite phase-change film material, characterized in that: the Ga 30 Sb 70 The thickness of the thin film layer is 5nm, the thickness of the Sb thin film layer is 7nm, and the thickness of the phase-change thin film material is 60nm.
3. A multicycle Ga according to claim 1 30 Sb 70 And Sb composite phase-change film material, characterized in that: the Ga 30 Sb 70 The thickness of the thin film layer is 10nm, the thickness of the Sb thin film layer is 7nm, and the thickness of the phase-change thin film material is 85nm.
4. A multicycle Ga according to claim 1 30 Sb 70 And Sb composite phase-change film material, characterized in that: the Ga 30 Sb 70 The thickness of the thin film layer is 10nm, the thickness of the Sb thin film layer is 15nm, and the thickness of the phase-change thin film material is 125nm.
5. A multicycle Ga according to claim 1 30 Sb 70 And Sb composite phase-change film material, characterized in that: the phase-change thin material is prepared by adopting a magnetron sputtering method, and the substrate is Si/SiO 2 The sputtering target is Ga 30 Sb 70 And Sb.
6. A multicycle Ga according to claim 1 30 Sb 70 And Sb composite phase-change film material, characterized in that: the Ga 30 Sb 70 The atomic ratio of Ga and Sb in the film layer material is 30:70.
7. A multicycle Ga of claim 1 30 Sb 70 And Sb composite phase change thinThe preparation method of the membrane material is characterized by comprising the following steps: the method is prepared by using a magnetron sputtering coating system and adopting a double-target co-sputtering method, and specifically comprises the following steps:
(1) Putting the quartz plate and the silicon wafer substrate material into deionized water and absolute ethyl alcohol, ultrasonically cleaning, taking out, and then drying by high-purity nitrogen;
(2) Alloy Ga is used in a magnetron sputtering coating system 30 Sb 70 The target material is arranged in a magnetron No. 3 radio frequency sputtering target, and the simple substance Sb target material is arranged in a magnetron No. 1 direct current sputtering target;
(3) Turning on the mechanical pump until the vacuum degree reaches 1.5X10 -1 When Pa is lower, turning on the molecular pump, and vacuumizing to 5.0X10 - 5 Pa or less;
(4) Then control alloy Ga 30 Sb 70 The sputtering power of the target is 40W, the sputtering power of the simple substance Sb target is 20W, argon is introduced, the flow is set to be 40SCCM, and the sputtering air pressure is 0.3Pa;
(5) Coating by using a coating monitoring program, changing the sputtering thickness by controlling the sputtering time, wherein the sputtering time of the Sb target is 60-90s, and Ga 30 Sb 70 Sputtering time of the target material is 60-120s, and closing Ga after coating is finished 30 Sb 70 The target radio frequency power supply and the Sb target direct current power supply obtain multicycle Ga 30 Sb 70 A Sb phase-change film material.
8. A multicycle Ga according to claim 7 30 Sb 70 And a preparation method of the Sb composite phase-change film material, which is characterized by comprising the following steps of: the Ga 30 Sb 70 The purity of the target material is 99.99%, and the purity of the Sb target material is 99.9%.
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