CN116977306A - Method for acquiring potential wafer weakpoint - Google Patents
Method for acquiring potential wafer weakpoint Download PDFInfo
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- CN116977306A CN116977306A CN202310946088.5A CN202310946088A CN116977306A CN 116977306 A CN116977306 A CN 116977306A CN 202310946088 A CN202310946088 A CN 202310946088A CN 116977306 A CN116977306 A CN 116977306A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000000206 photolithography Methods 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000011161 development Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000012937 correction Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000012795 verification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Geometry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a method for obtaining potential wakpoint of a wafer, which provides an original photomask layer graph, and enlarges and reduces each side of the photomask layer graph according to a set proportion to obtain a first photomask layer graph and a second photomask layer graph; the first and second developed patterns on the photoresist layer are obtained by using the first and second photomask layer patterns respectively; the first developed pattern and the second developed pattern are utilized to obtain a pattern position with a critical dimension difference larger than a preset value, and then the pattern at the corresponding position of the original photomask layer pattern is acquired according to the pattern position to be a pattern with an MEEF value exceeding standard; marking the pattern with the MEEF value exceeding the standard and the pattern with the photoetching process window smaller than the target value as photoetching weakpoint. The invention can screen out the pattern with larger MEEF in all photomask patterns, and combines the photolithography process window parameters to determine the pattern with smaller photolithography process window as the photolithography weakpoint, thereby improving the problem that the error of MEEF and the photomask are combined together to generate larger influence on the CD of the silicon wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for acquiring potential wafer points.
Background
With the rapid development of integrated circuits and the expansion of wafer foundry enterprise scale, moore's law has reached practical limits. Particularly, after 55nm technology node, the requirements of wafer substitutes for photolithography process are higher and higher, potential wafer weakpoint is effectively found, and the photolithography process window is improved, so that the wafer substitutes for photolithography process quality is improved, and the wafer substitutes for wafer are core factors.
At present, it is found that the well point on a silicon wafer (usually refers to a special layout in which problems are most likely to occur in a product) is mainly combined with a manual experience method, specifically, OPC (optical proximity correction) engineers intensively inspect individual patterns with smaller photolithography process windows and take the individual patterns as well as the well point, and certain patterns on an actual photomask are not considered, because MEFF (Mask Error EnhancementFactor, mask error enhancement factor is defined as the slope of the line width of photoresist on the wafer changing with the line width of the mask pattern) is larger, the patterns with smaller photolithography process windows and the new well point on the silicon wafer are combined together, so that the prediction of the well point cannot achieve the effect of accurately hitting.
MEEF is generally one of the criteria for measuring the photolithography process, and can be understood as a 1-fold change in Critical Dimension (CD) of a photomask by 1nm, and a change in critical dimension on a silicon wafer. The larger MEEF indicates that the critical dimensions on the wafer are more affected by the mask variations. Since the minimum design rule is different for each layer, i.e., the minimum critical dimension is different for each layer, the mask level used for different lithography layers is also different for accuracy and cost. The higher the mask level, the smaller the error between the actual mask critical dimension and the ideal mask critical dimension. However, there is always an error between the actual mask critical dimension and the ideal mask critical dimension for any class of mask. The MEEF and mask errors combine to have a greater impact on the critical dimensions of the wafer.
To solve the above-mentioned problems, a new method for obtaining the potential wafer weakpoint is needed.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an objective of the present invention is to provide a method for obtaining potential wafer point, which is used for solving the problem that in the prior art, there is always an error between the actual critical dimension of the mask and the critical dimension of the ideal mask, and the combination of the MEEF and the mask error will have a greater influence on the critical dimension of the silicon wafer.
To achieve the above and other related objects, the present invention provides a method for obtaining a potential wafer point, 1, including:
step one, providing an original photomask layer graph, and expanding and shrinking each side of the photomask layer graph according to a set proportion to obtain a first photomask layer graph and a second photomask layer graph;
step two, the first and second developed patterns on the photoresist layer are obtained by using the first and second photomask layer patterns respectively;
step three, obtaining a graph position with a key size difference larger than a preset value by using the first developed graph and the second developed graph, and obtaining a graph at the corresponding position of the original photomask layer graph as an MEEF value exceeding graph according to the graph position;
marking out the pattern with the MEEF value exceeding the standard and the pattern with the photoetching process window smaller than the target value as photoetching weakpoint.
Preferably, in the first step, each side of the original mask layer pattern is enlarged to obtain the first mask layer pattern with the offset a, and each side of the mask layer pattern is reduced to obtain the second mask layer pattern with the offset b.
Preferably, the method for obtaining the corresponding first and second post-exposure patterns by using the first and second mask patterns in the second step includes: and respectively simulating the developed outlines of the photoresist layers of the first photomask layer pattern and the second photomask layer pattern on the substrate by using an optical proximity correction model, thereby obtaining the first developed pattern and the second developed pattern.
Preferably, the method for obtaining the corresponding first and second post-exposure patterns by using the first and second mask patterns in the second step includes: and transferring the first and second photomask layer patterns to photoresist layers on a substrate respectively by utilizing photoetching, and measuring after development to obtain the first and second developed patterns.
Preferably, in the third step, the method for obtaining the pattern position where the difference between the critical dimensions of the first and second developed patterns is greater than a preset value, and then obtaining the difference pattern at the corresponding position of the original photomask layer pattern according to the pattern position includes: and carrying out logical non operation on the first developed graph and the second developed graph to obtain a difference graph of the first developed graph and the second developed graph, obtaining a graph position where the line width of the difference graph is larger than the preset value, and obtaining a graph corresponding to the original photomask layer graph as the MEEF value standard exceeding graph according to the graph position. And step four, judging the depth of field of the MEEF value standard exceeding pattern, and if the depth of field is smaller than a target depth of field value, defining the MEEF value standard exceeding pattern as a pattern with the photolithography process window smaller than a target value.
As described above, the method for obtaining the potential wafer point of the present invention has the following advantages:
the invention can screen out the pattern with larger MEEF in all photomask patterns, and combines the photolithography process window parameters to determine the pattern with smaller photolithography process window as the photolithography mask point, thereby improving the problem that the combination of MEEF and photomask errors has larger influence on the CD of the silicon wafer, and the screened photolithography mask point can be used as a reference for the development of photolithography process and can also be used as a hot spot on the silicon wafer for subsequent verification.
Drawings
FIG. 1 is a schematic diagram of a method for obtaining potential wafer weakpoint according to the present invention;
FIG. 2 is a schematic diagram of an original mask layer according to the present invention;
FIG. 3 is a schematic diagram of a first and second mask layer acquisition process according to the present invention;
FIG. 4 is a schematic diagram of a first mask layer according to the present invention;
FIG. 5 is a schematic diagram of a second mask layer according to the present invention;
FIG. 6 is a schematic diagram showing a developed profile of a first mask layer pattern according to the present invention;
FIG. 7 is a schematic diagram showing a developed profile of a second mask layer pattern according to the present invention;
FIG. 8 is a schematic diagram of the difference graph of the present invention;
fig. 9 is an enlarged schematic view of the structure of fig. 8 at the circle.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Referring to fig. 1, the present invention provides a method for obtaining potential wafer points, which includes:
step one, providing an original photomask layer graph (shown in fig. 2), and expanding and shrinking each side of the photomask layer graph according to a set proportion to obtain a first photomask layer graph and a second photomask layer graph (shown in fig. 4 and 5);
in the embodiment of the present invention, referring to fig. 3, in the first step, each side of the original mask layer pattern is enlarged to obtain a first mask layer pattern with an offset of a, and the second step, each side of the mask layer pattern is reduced to obtain a second mask layer pattern with an offset of b, i.e. the distance between the first mask layer pattern and the original mask layer pattern is a, and the distance between the second mask layer pattern and the original mask layer pattern is b.
Step two, the first and second developed patterns on the photoresist layer are obtained by using the first and second photomask layer patterns respectively (as shown in fig. 6 and 7);
in the embodiment of the present invention, the method for obtaining the corresponding first and second post-exposure patterns by using the first and second mask patterns in the second step includes: and respectively simulating the developed outlines of the photoresist layers of the first photomask layer pattern and the second photomask layer pattern on the substrate by using an optical proximity correction model, thereby obtaining the first developed pattern and the second developed pattern.
In the embodiment of the present invention, the method for obtaining the corresponding first and second post-exposure patterns by using the first and second mask patterns in the second step includes: and transferring the patterns of the first photomask layer and the second photomask layer to photoresist layers on the substrate respectively by utilizing photoetching, and measuring after development to obtain the patterns after the first development and the second development.
Step three, referring to fig. 8 and 9, using the first and second developed patterns to obtain a pattern position with a critical dimension difference larger than a preset value, and then obtaining a pattern corresponding to the original mask layer pattern as an MEEF value exceeding pattern according to the pattern position;
in the embodiment of the invention, in the third step, the first and second developed patterns are used to obtain the pattern positions with the critical dimension difference larger than the preset value, and then the method for obtaining the difference patterns at the corresponding positions of the original photomask layer patterns according to the pattern positions comprises the following steps: and performing logical negation operation on the first developed pattern and the second developed pattern to obtain a difference pattern of the first developed pattern and the second developed pattern, obtaining a pattern position where the line width of the difference pattern is larger than a preset value, and obtaining that the pattern at the corresponding position of the original photomask layer pattern is an MEEF value exceeding pattern according to the pattern position. The width of the difference pattern was 1 times the mask CD variation (a+b), simulating the variation in CD after development of the photoresist layer on the substrate. The larger the width of the difference pattern, the larger the MEEF, which means that the CD on the wafer is more affected by the mask variation.
In the embodiment of the invention, the fourth step further includes judging the depth of field of the pattern with the MEEF value exceeding the standard, if the depth of field is smaller than the target depth of field value, defining the pattern with the MEEF value exceeding the standard as the pattern with the photolithography process window smaller than the target value, and the pattern can be used as a reference for developing photolithography process and can also be used as a hot spot on a silicon wafer for subsequent verification.
And fourthly, marking a pattern with the MEEF value exceeding the standard and a pattern with the photoetching process window smaller than the target value as photoetching weakpoint.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In summary, the method can screen out the patterns with larger MEEF in all photomask patterns, and determine the patterns with smaller photolithography process windows as photolithography mask points by combining the photolithography process window parameters, so that the problem that the combination of MEEF and the photomask errors has larger influence on the CD of the silicon wafer is solved, and the screened photolithography mask points can be used as references for developing photolithography processes and can also be used as hot spots on the silicon wafer for subsequent verification. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (6)
1. A method for obtaining potential webpoint of a wafer, comprising:
step one, providing an original photomask layer graph, and expanding and shrinking each side of the photomask layer graph according to a set proportion to obtain a first photomask layer graph and a second photomask layer graph;
step two, the first and second developed patterns on the photoresist layer are obtained by using the first and second photomask layer patterns respectively;
step three, obtaining a graph position with a key size difference larger than a preset value by using the first developed graph and the second developed graph, and obtaining a graph at the corresponding position of the original photomask layer graph as an MEEF value exceeding graph according to the graph position;
marking out the pattern with the MEEF value exceeding the standard and the pattern with the photoetching process window smaller than the target value as photoetching weakpoint.
2. The method of obtaining potential points of a wafer of claim 1, wherein: in the first step, the sides of the original photomask layer patterns are enlarged to obtain the first photomask layer patterns with the offset of a, and the sides of the photomask layer patterns are reduced to obtain the second photomask layer patterns with the offset of b.
3. The method of obtaining potential points of a wafer of claim 1, wherein: the method for obtaining the corresponding first and second exposed patterns by using the first and second photomask layer patterns respectively in the second step comprises the following steps: and respectively simulating the developed outlines of the photoresist layers of the first photomask layer pattern and the second photomask layer pattern on the substrate by using an optical proximity correction model, thereby obtaining the first developed pattern and the second developed pattern.
4. The method of obtaining potential points of a wafer of claim 1, wherein: the method for obtaining the corresponding first and second exposed patterns by using the first and second photomask layer patterns respectively in the second step comprises the following steps: and transferring the first and second photomask layer patterns to photoresist layers on a substrate respectively by utilizing photoetching, and measuring after development to obtain the first and second developed patterns.
5. The method of obtaining potential points of a wafer of claim 1, wherein: in the third step, the method for obtaining the pattern position with the critical dimension difference larger than the preset value by using the first developed pattern and the second developed pattern, and then obtaining the difference pattern at the corresponding position of the original photomask layer pattern according to the pattern position comprises the following steps: and carrying out logical non operation on the first developed graph and the second developed graph to obtain a difference graph of the first developed graph and the second developed graph, obtaining a graph position where the line width of the difference graph is larger than the preset value, and obtaining a graph corresponding to the original photomask layer graph as the MEEF value standard exceeding graph according to the graph position.
6. The method of obtaining potential points of a wafer of claim 1, wherein: and step four, judging the depth of field of the MEEF value standard exceeding pattern, and if the depth of field is smaller than a target depth of field value, defining the MEEF value standard exceeding pattern as a pattern with the photolithography process window smaller than a target value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310946088.5A CN116977306A (en) | 2023-07-28 | 2023-07-28 | Method for acquiring potential wafer weakpoint |
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| CN202310946088.5A CN116977306A (en) | 2023-07-28 | 2023-07-28 | Method for acquiring potential wafer weakpoint |
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| CN116977306A true CN116977306A (en) | 2023-10-31 |
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| CN202310946088.5A Pending CN116977306A (en) | 2023-07-28 | 2023-07-28 | Method for acquiring potential wafer weakpoint |
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- 2023-07-28 CN CN202310946088.5A patent/CN116977306A/en active Pending
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