CN116963524A - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN116963524A CN116963524A CN202310949539.0A CN202310949539A CN116963524A CN 116963524 A CN116963524 A CN 116963524A CN 202310949539 A CN202310949539 A CN 202310949539A CN 116963524 A CN116963524 A CN 116963524A
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- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 34
- 150000004706 metal oxides Chemical class 0.000 claims description 34
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 210000000746 body region Anatomy 0.000 claims description 5
- 229910000846 In alloy Inorganic materials 0.000 claims description 4
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 163
- 239000007769 metal material Substances 0.000 description 10
- 230000003068 static effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a light emitting device, comprising: a substrate including a light emitting region and a non-light emitting region; the light-emitting area is provided with a light-emitting structure, the non-light-emitting area is provided with a lead, and the lead is electrically connected with the light-emitting structure; the non-luminous region further comprises an insulating layer, the insulating layer is arranged on one side, far away from the substrate, of the lead, the insulating layer comprises an opening, at least part of the lead is exposed out of the opening, a liquid metal layer is arranged in the opening, and the liquid metal layer covers the exposed lead at the opening. The light-emitting device provided by the embodiment of the invention can reduce the resistance of the lead and improve the antistatic capability of the lead.
Description
Technical Field
The present invention relates to the field of organic light emitting technology, and in particular, to a light emitting device.
Background
An Organic Light-Emitting Diode (OLED) is a photoelectric device that emits Light by carrier injection and recombination of Light. The specific light-emitting process of the OLED is that electrons are injected through a cathode, electrons are transmitted to a light-emitting layer through an electron transmission material, holes are injected through an anode, holes are transmitted to the light-emitting layer through a hole transmission material, the electrons and the holes are combined in the light-emitting layer to form excitons, and the excitons deactivate light. The OLED light emitting device has the characteristics of good uniformity of light emission, light weight, flexibility, stretchability, and the like, and is attracting attention.
Currently, OLEDs are widely used in the fields of display, lighting, etc. In the lighting field, as the number of independent light emitting areas is more and more, the number of leads is more and more, so that the leads are thinner and thinner, the resistance is larger and the antistatic capability is poorer and worse.
Disclosure of Invention
The invention provides a light-emitting device, which can reduce the resistance of a lead and improve the antistatic capability of the lead.
According to an aspect of the present invention, there is provided a light emitting device including:
a substrate including a light emitting region and a non-light emitting region;
the light-emitting area is provided with a light-emitting structure, the non-light-emitting area is provided with a lead, and the lead is electrically connected with the light-emitting structure;
the non-luminous region further comprises an insulating layer, the insulating layer is arranged on one side, far away from the substrate, of the lead, the insulating layer comprises an opening, at least part of the lead is exposed out of the opening, a liquid metal layer is arranged in the opening, and the liquid metal layer covers the exposed lead at the opening.
Optionally, a metal oxide layer is further disposed in the opening, the metal oxide layer is disposed on a side, far away from the substrate, of the liquid metal layer, and the metal oxide layer covers the liquid metal layer.
Optionally, the light emitting device includes at least two light emitting areas, and each light emitting area is provided with one light emitting structure; each light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially stacked, wherein the second electrode layer is arranged on one side, far away from the substrate, of the light-emitting layer; at least part of the second electrode layers of the light-emitting structure are connected with each other to form an integral structure;
the leads include a first lead and a second lead;
the first lead is electrically connected with the first electrode layer, and the second lead is electrically connected with the second electrode layer;
the opening comprises a first opening, at least part of the first lead is exposed out of the first opening, and the liquid metal layer covers the first lead exposed out of the first opening; and/or the opening comprises a second opening, at least part of the second lead is exposed out of the second opening, and the liquid metal layer covers the exposed second lead at the second opening.
Optionally, the first opening exposes a preset area of the first lead, and the liquid metal layer covers the preset area of the first lead, where the preset area is an area where a line width in the first lead is smaller than a preset threshold value.
Optionally, the first opening exposes the entire first lead, and the liquid metal layer covers the entire first lead.
Optionally, the width of the first opening is greater than the width of the first lead in the width direction of the first lead;
the liquid metal layer covers the upper surface of the first lead far away from the substrate, and the first side surface and the second side surface of the first lead; wherein the first side face and the second side face are disposed opposite to each other in a width direction of the first lead.
Optionally, the second electrode layer includes a body region and a lap region integrally connected, and the lap region covers part of the second lead and contacts with the second lead;
the second opening exposes a part of the second lead adjacent to the overlap region;
the liquid metal layer is in contact with the lap joint area, covers at least part of the lap joint area, and extends from the lap joint area to the exposed surface of the second lead at the second opening.
Optionally, the liquid metal layer covers the entire overlap region and a portion of the body region adjacent the overlap region.
Optionally, the sum of the thicknesses of the liquid metal layer and the metal oxide layer is less than or equal to the depth of the opening;
the sum of the thicknesses of the liquid metal layer and the metal oxide layer is greater than or equal to 100 nanometers and less than or equal to 2 micrometers.
Optionally, the material used for the liquid metal layer includes at least one of eutectic gallium indium alloy liquid metal and gallium indium tin alloy liquid metal.
Optionally, the light emitting device further includes:
the packaging layer is arranged on one side, far away from the substrate, of the light-emitting structure;
the encapsulation layer covers the light emitting structure, the metal oxide layer and at least part of the insulation layer.
According to the light-emitting device provided by the embodiment of the invention, the insulating layer comprises the opening, at least part of the leads are exposed out of the opening, the liquid metal layer is arranged in the opening and covers the exposed leads at the opening, and the liquid metal layer has good electric conduction performance and thermal conductivity and is not easy to be damaged by static electricity, so that the resistance of the leads can be reduced, the risk of electrostatic breakdown of the leads is reduced, the thermal conductivity of the leads can be improved, and the heat dissipation speed of the light-emitting device is improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a top view of a light emitting device according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the light-emitting device of FIG. 1 along section line AA;
fig. 3 is a cross-sectional view of still another light emitting device according to an embodiment of the present invention;
fig. 4 is a top view of still another light emitting device according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of the light-emitting device of FIG. 4 along section line BB;
FIG. 6 is a top view of yet another light emitting device according to an embodiment of the present invention;
FIG. 7 is a top view of yet another light emitting device according to an embodiment of the present invention;
fig. 8 is a cross-sectional view of still another light-emitting device according to an embodiment of the present invention;
fig. 9 is a cross-sectional view of still another light emitting device according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
An embodiment of the present invention provides a light emitting device, fig. 1 is a top view of the light emitting device provided in the embodiment of the present invention, fig. 2 is a schematic cross-sectional view of the light emitting device along a section line AA in fig. 1, and referring to fig. 1 and 2, the light emitting device includes:
a substrate 10, the substrate 10 including a light emitting region 11 and a non-light emitting region 12;
the light emitting region 11 is provided with a light emitting structure 20, the non-light emitting region 12 is provided with a lead 30, and the lead 30 is electrically connected with the light emitting structure 20;
the non-light emitting region 12 further includes an insulating layer 40, the insulating layer 40 is disposed on a side of the lead 30 away from the substrate 10, the insulating layer 40 includes an opening 41, at least a portion of the lead 30 is exposed by the opening 41, a liquid metal layer 50 is disposed in the opening 41, and the liquid metal layer 50 covers the exposed lead 30 at the opening.
The substrate 10 may be a flexible substrate or a rigid substrate. The substrate 10 may include two or more light emitting regions 11, each light emitting region 11 being provided with a light emitting structure 20, each light emitting structure 20 being capable of emitting light independently. The non-light emitting region 12 is a region of the substrate 10 other than the light emitting region 11. The lead 30 is used for transmitting a driving signal to the light emitting structure 20 to drive the light emitting structure 20 to emit light. Along the thickness direction of the insulating layer 40, the opening 41 penetrates through the insulating layer 40, and exposes at least part of the lead 30 covered by the insulating layer 40.
Typically, the lead 30 is covered by the insulating layer 40, and the thin thickness of the lead 30 affects the patterning of the subsequent lead 30, and the thinner the lead 30 in the prior art, the greater the resistance of the lead 30 and the susceptibility to electrostatic damage. Through setting up opening 41 at insulating layer 40, opening 41 department exposes out at least partial lead wire 30, and the lead wire 30 that exposes is covered by liquid metal layer 50, because liquid metal has good electric conduction property, and liquid metal heat conductivity is better simultaneously, is difficult for by static damage, therefore liquid metal layer 50 covers the electric conductivity of lead wire 30, reduces the resistance of lead wire 30, reduces the risk that lead wire 30 was damaged by static, and improves the heat conductivity.
In addition, the opening 41 may expose the entire lead 30, or may expose a portion of the lead 30, which may, for example, expose the lead 30 with a smaller line width (e.g., the lead 30 with a line width smaller than a preset threshold value), so that the liquid metal layer 50 covers the lead 30 with a smaller line width, thereby reducing the resistance of the lead 30, improving the signal transmission performance, and reducing the risk of electrostatic breakdown of the lead 30 with a smaller line width. In addition, the width of the opening 41 may be smaller than, equal to, or larger than the width of the lead 30 in the width direction of the lead 30, that is, the entire upper surface of the lead 31 may be exposed at the opening 41 or a part of the upper surface may be exposed in the width direction of the lead 30. Illustratively, referring to fig. 2, the width of the opening 42 is smaller than the width of the lead 30, and a portion of the upper surface of the lead 31 is exposed at the opening 41 in the width direction of the lead 30.
According to the light-emitting device provided by the embodiment of the invention, the insulating layer 40 is arranged and comprises the opening 41, at least part of the lead 30 is exposed out of the opening 41, the liquid metal layer 50 is arranged in the opening 41, and the liquid metal layer 50 covers the lead 30 exposed out of the opening 41, so that the resistance of the lead 30 can be reduced, the risk of electrostatic breakdown of the lead 30 is reduced, the heat conductivity of the lead can be improved, and the heat dissipation speed of the light-emitting device is improved, because the liquid metal layer 50 has good electric conductivity and heat conductivity and is not easy to be damaged by static electricity.
It should be noted that, for clarity of presentation of the structures, fig. 1 does not show the liquid metal layer, and is not a limitation of the present invention.
Fig. 3 is a cross-sectional view of still another light emitting device according to an embodiment of the present invention, optionally, referring to fig. 3, a metal oxide layer 60 is further disposed in the opening, the metal oxide layer 60 is disposed on a side of the liquid metal layer 50 away from the substrate 10, and the metal oxide layer 60 covers the liquid metal layer 50.
Specifically, after the liquid metal material is disposed in the opening, the surface of the liquid metal material may be oxidized, for example, oxygen may be introduced to oxidize the surface of the liquid metal material to form the metal oxide layer 60, and the liquid metal material that is not oxidized forms the liquid metal layer 50. By arranging the metal oxide layer 60 on the surface of the liquid metal layer 50, insulation protection of the liquid metal layer 50 can be realized without manufacturing other insulation materials, and as the metal oxide has excellent water-oxygen barrier property, the metal oxide layer 60 is arranged to cover the liquid metal layer 50, so that the influence of the introduction of the liquid metal layer 50 on the encapsulation effect of the light-emitting device can be avoided.
Fig. 4 is a top view of a light emitting device according to an embodiment of the present invention, fig. 5 is a cross-sectional view of the light emitting device shown in fig. 4 along a section line BB, and fig. 6 is a top view of a light emitting device according to an embodiment of the present invention. Alternatively, referring to fig. 4 to 6, the light emitting device includes at least two light emitting regions 11, each light emitting region 11 being provided with a light emitting structure 20; each light emitting structure 20 comprises a first electrode layer 21, a light emitting layer 22 and a second electrode layer 23 which are sequentially stacked, wherein the second electrode layer 23 is arranged on one side of the light emitting layer 22 away from the substrate 10; the second electrode layers 23 of at least part of the light emitting structure 20 are connected to each other as a unitary structure;
the lead 30 includes a first lead 31 and a second lead 32;
the first lead 31 is electrically connected to the first electrode layer 21, and the second lead 32 is electrically connected to the second electrode layer 23;
the openings include a first opening exposing at least a portion of the first lead 31, the liquid metal layer 50 covering the first lead 31 exposed at the first opening, and/or the openings include a second opening exposing at least a portion of the second lead 32, the liquid metal layer 50 covering the second lead 32 exposed at the second opening.
The second electrode layer, the light emitting layer, and the metal oxide layer are not shown in fig. 4, and the light emitting layer and the metal oxide layer are not shown in fig. 6, and are not limiting of the present invention. Referring to fig. 4 and 5, the lead may include two conductive layers, one of which may be disposed in the same layer as the first electrode layer 21, and made of the same material, and manufactured in the same process. For example, the lead may include a metal layer and a transparent metal oxide layer, which may be the same material as the first electrode layer 21, disposed in the same layer, and fabricated in the same process. The first lead 31 is exemplarily shown in fig. 5.
Since the number of light emitting regions 11 in the light emitting device increases, the light emitting structure 20 of each light emitting region 11 needs to be connected to one first lead 31, the number of first leads 31 increases, the area of the non-light emitting region 11 is limited, resulting in a decrease in the line width of each first lead 31, an increase in the resistance of the first lead 31, and a decrease in the anti-electrostatic breakdown capability. The first opening is arranged to expose at least part of the first lead 31, and the exposed first lead 31 at the first opening is covered by the liquid metal layer 50, so that the resistance of the first lead 31 can be reduced, and the antistatic capability of the first lead 31 can be improved.
In addition, referring to fig. 6, the second opening is provided to expose at least a portion of the second lead 32, and the exposed second lead 32 at the second opening is covered by the liquid metal layer 50, so that the resistance of the second lead 32 can be reduced, and the antistatic capability of the second lead 32 can be improved.
Specifically, the second lead 32 is electrically connected to the second electrode layer 23 generally by bonding, that is, the second electrode layer 23 covers a portion of the second lead 32 and contacts the second lead 32, so as to electrically connect the second electrode 23 to the second lead 32. The second opening may expose a portion of the second lead 32 adjacent to the overlap region of the second electrode layer 23, the liquid metal layer 50 may cover the portion of the second lead 32, and when the overlap region is separated from the second lead 32, the liquid metal layer 50 may fill the gap, so that the overlap region is electrically connected with the second lead 32, thereby avoiding bad contact between the second lead 32 and the overlap region, and affecting lighting of the light emitting device.
In addition, fig. 4 illustrates only one first lead 31 having a liquid metal layer 50 provided thereon, and the present invention is not limited thereto, and in other embodiments, each first lead 31 may be provided with a liquid metal layer 50.
Fig. 6 illustrates a monolithic electrode in which the second electrode layers 23 of all the light emitting structures 20 are integrally connected, and illustrates only one second lead wire 32 covered with a liquid metal layer 50 by way of example, not by way of limitation. In other embodiments, a liquid metal layer 50 may be provided for each second lead 32.
Optionally, with continued reference to fig. 4, the first opening exposes a preset area of the first lead 31, and the liquid metal layer 50 covers the preset area of the first lead 31, where the preset area is an area of the first lead 31 with a line width smaller than a preset threshold.
Specifically, the line width of the predetermined area of the first lead 31 is smaller, the resistance is larger, and the first lead is more easily broken down by static electricity. The preset area of the first lead 31 is exposed by the first opening, so that the resistance of the preset area with smaller line width can be reduced, the electrostatic protection capability is improved, the preset area of the first lead 31 is prevented from being broken down by static electricity, the resistance of the whole first lead 31 is reduced, and the signal transmission performance is improved.
Further, the preset threshold may be less than or equal to 50 microns.
Fig. 7 is a top view of still another light emitting device according to an embodiment of the present invention, optionally, referring to fig. 7, the first opening exposes the entire first lead 31, and the liquid metal layer 50 covers the entire first lead 31.
Specifically, the first opening is arranged to expose the whole first lead 31, so that the resistance of the whole first lead 31 can be reduced better, the signal transmission performance is improved, the electrostatic protection capability of the whole first lead 31 is improved, and any region of the first lead 31 is prevented from being broken down by static electricity.
It should be noted that fig. 7 illustrates only the liquid metal layer 50 on the surface of one first lead 31, and is not a limitation of the present invention, and in other embodiments, each first lead 31 may be covered by the liquid metal layer 50.
Fig. 8 is a cross-sectional view of still another light emitting device according to an embodiment of the present invention, and optionally, referring to fig. 8, a width d of the first opening is greater than a width of the first lead 31 along a width direction of the first lead 31;
the liquid metal layer 50 covers the upper surface of the first lead 31 away from the substrate, and the first and second sides of the first lead 31; wherein the first side face and the second side face are disposed opposite to each other in the width direction of the first lead.
Specifically, the first lead 31 is prone to burrs at the first side and the second side during fabrication, and static charge is prone to build up at the burrs, resulting in breakdown of the first lead 31. The liquid metal layer 50 is arranged to cover the upper surface, the first side face and the second side face of the first lead wire 31, so that the resistance of the first lead wire 31 can be reduced, and the liquid metal layer 50 can lead out charges accumulated at burrs to avoid the first lead wire 31 from being broken down due to accumulation of the charges at the burrs because the liquid metal layer 50 has good conductivity, and the liquid metal layer 50 can comprehensively protect the upper surface, the first side face and the second side face to avoid static electricity from breaking down the first lead wire 31 from the upper surface, the first side face and the second side face.
Optionally, with continued reference to fig. 6, the second electrode layer 23 includes a body region and a landing region 231 integrally connected, the landing region 231 covering a portion of the second lead 32 and being in contact with the second lead 32;
the second opening exposes a portion of the second lead 32 adjacent to the landing zone 231;
the liquid metal layer 50 contacts the bonding region and covers at least a portion of the bonding region 231, and extends from the bonding region 231 to the exposed surface of the second lead 32 at the second opening.
Specifically, the overlap region 231 is a region where the second electrode layer 23 contacts the second lead 32. The liquid metal layer 50 extends from the overlap region 231 to the surface of the exposed second lead 32 at the second opening, so that the overlap area of the second electrode layer 23 and the second lead 32 can be increased, the contact resistance can be reduced, and if the second electrode layer 23 and the second lead 32 fall off, the gap can be supplemented by the liquid metal, so that the overlap region is electrically connected with the second lead 32, and the influence of poor contact between the second lead 32 and the overlap region on the lighting of the light-emitting device can be avoided.
In addition, the liquid metal layer 50 may cover the entire overlap region 231 and a portion of the body region adjacent to the overlap region 231.
Optionally, with continued reference to fig. 8, the thickness sum of the liquid metal layer 50 and the metal oxide layer 60 is less than or equal to the depth of the opening.
Specifically, when the liquid metal layer 50 and the metal oxide layer 60 are manufactured, a liquid metal material is generally disposed in the opening, the surface of the liquid metal material is oxidized to form the metal oxide layer 60, and the unoxidized liquid metal material forms the metal oxide layer 60. After the thickness of the liquid metal layer 50 and the metal oxide layer 60 is exceeded, a large amount of liquid metal material needs to be disposed in the openings, so that the liquid metal material easily overflows the openings and flows to other areas of the light emitting device, and is easy to pollute the other areas. The thickness of the liquid metal layer 50 and the metal oxide layer 60 and the depth of the openings are set to be less than or equal to the depth of the openings so that less liquid metal material is required and the openings are not overflowed to contaminate other structures.
Alternatively, the sum of the thicknesses of the liquid metal layer 50 and the metal oxide layer 60 is greater than or equal to 100 nanometers and less than or equal to 2 microns.
In particular, when the insulating layer 40 is an inorganic insulating layer, since the inorganic insulating layer is thin, the liquid metal layer 50 and the metal oxide layer 60 may be provided with a small thickness, for example, the sum of the thicknesses of the liquid metal layer 50 and the metal oxide layer 60 may be set to be 100 nm or more and 300 nm or less. When the insulating layer 40 is an organic insulating layer, the liquid metal layer 50 and the metal oxide layer 60 may be provided with a larger thickness, for example, the sum of the thicknesses of the liquid metal layer 50 and the metal oxide layer 60 may be 300 nm or more and 2 μm or less, for example, 1 μm, 1.5 μm or more, due to the thicker thickness of the organic insulating layer.
Optionally, the material used for the liquid metal layer includes at least one of eutectic gallium indium alloy liquid metal and gallium indium tin alloy liquid metal.
The eutectic gallium indium alloy (EGaln) liquid metal and gallium indium tin alloy (GaInSn) liquid metal have good conductivity and strong antistatic ability, and the adoption of the material can better reduce the resistance of the lead and improve the antistatic ability of the lead.
Fig. 9 is a cross-sectional view of yet another light emitting device according to an embodiment of the present invention, and optionally, referring to fig. 9, the light emitting device further includes:
the packaging layer 70, the packaging layer 70 is set up in the side far away from base plate 10 of the luminescent structure 20;
the encapsulation layer 70 covers the light emitting structure 20, the metal oxide layer 60, and at least a portion of the insulating layer 40.
Specifically, the encapsulation layer 70 may be a thin film encapsulation layer, which is used to block water oxygen and prevent the light emitting structure 20 from being damaged after the water oxygen invades the light emitting structure 20. The encapsulation layer 70 may include an inorganic layer and an organic layer disposed in a stacked manner.
In addition, a layer of the encapsulation layer 70 away from the substrate may further be provided with a glue layer 80 and a metal layer 90, and the metal layer 90 is used for protecting the light emitting device.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A light emitting device, comprising:
a substrate including a light emitting region and a non-light emitting region;
the light-emitting area is provided with a light-emitting structure, the non-light-emitting area is provided with a lead, and the lead is electrically connected with the light-emitting structure;
the non-luminous region further comprises an insulating layer, the insulating layer is arranged on one side, far away from the substrate, of the lead, the insulating layer comprises an opening, at least part of the lead is exposed out of the opening, a liquid metal layer is arranged in the opening, and the liquid metal layer covers the exposed lead at the opening.
2. A light-emitting device according to claim 1, wherein:
and a metal oxide layer is arranged in the opening, the metal oxide layer is arranged on one side of the liquid metal layer far away from the substrate, and the metal oxide layer covers the liquid metal layer.
3. A light-emitting device according to claim 1 or 2, wherein:
the light-emitting device comprises at least two light-emitting areas, and each light-emitting area is provided with a light-emitting structure; each light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially stacked, wherein the second electrode layer is arranged on one side, far away from the substrate, of the light-emitting layer; at least part of the second electrode layers of the light-emitting structure are connected with each other to form an integral structure;
the leads include a first lead and a second lead;
the first lead is electrically connected with the first electrode layer, and the second lead is electrically connected with the second electrode layer;
the opening comprises a first opening, at least part of the first lead is exposed out of the first opening, and the liquid metal layer covers the first lead exposed out of the first opening; and/or the opening comprises a second opening, at least part of the second lead is exposed out of the second opening, and the liquid metal layer covers the exposed second lead at the second opening.
4. A light-emitting device according to claim 3, wherein:
the first opening exposes a preset area of the first lead, and the liquid metal layer covers the preset area of the first lead, wherein the preset area is an area of the first lead, in which the line width is smaller than a preset threshold value.
5. A light-emitting device according to claim 3, wherein:
the first opening exposes the whole first lead wire, and the liquid metal layer covers the whole first lead wire.
6. A light-emitting device according to claim 3, wherein:
the width of the first opening is larger than that of the first lead in the width direction of the first lead;
the liquid metal layer covers the upper surface of the first lead far away from the substrate, and the first side surface and the second side surface of the first lead; wherein the first side face and the second side face are disposed opposite to each other in a width direction of the first lead.
7. A light-emitting device according to claim 3, wherein:
the second electrode layer comprises a main body area and a lap area which are integrally connected, and the lap area covers part of the second lead and is contacted with the second lead;
the second opening exposes a part of the second lead adjacent to the overlap region;
the liquid metal layer is in contact with the lap joint area, covers at least part of the lap joint area, and extends from the lap joint area to the exposed surface of the second lead at the second opening.
8. A light emitting device according to claim 7, wherein: the liquid metal layer covers the entire overlap region and a portion of the body region adjacent the overlap region.
9. A light-emitting device according to claim 2, wherein:
the sum of the thicknesses of the liquid metal layer and the metal oxide layer is less than or equal to the depth of the opening;
the sum of the thicknesses of the liquid metal layer and the metal oxide layer is greater than or equal to 100 nanometers and less than or equal to 2 micrometers;
the liquid metal layer is made of at least one of eutectic gallium indium alloy liquid metal and gallium indium tin alloy liquid metal.
10. The light-emitting device according to claim 2, further comprising:
the packaging layer is arranged on one side, far away from the substrate, of the light-emitting structure;
the encapsulation layer covers the light emitting structure, the metal oxide layer and at least part of the insulation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310949539.0A CN116963524A (en) | 2023-07-31 | 2023-07-31 | Light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310949539.0A CN116963524A (en) | 2023-07-31 | 2023-07-31 | Light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116963524A true CN116963524A (en) | 2023-10-27 |
Family
ID=88444360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310949539.0A Pending CN116963524A (en) | 2023-07-31 | 2023-07-31 | Light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116963524A (en) |
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2023
- 2023-07-31 CN CN202310949539.0A patent/CN116963524A/en active Pending
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