CN116953468B - Semiconductor material atomic point defect detection system and method - Google Patents
Semiconductor material atomic point defect detection system and method Download PDFInfo
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- CN116953468B CN116953468B CN202311211822.XA CN202311211822A CN116953468B CN 116953468 B CN116953468 B CN 116953468B CN 202311211822 A CN202311211822 A CN 202311211822A CN 116953468 B CN116953468 B CN 116953468B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 230000007547 defect Effects 0.000 title claims abstract description 55
- 238000001514 detection method Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000523 sample Substances 0.000 claims abstract description 72
- 239000007787 solid Substances 0.000 claims abstract description 54
- 238000006073 displacement reaction Methods 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 230000005284 excitation Effects 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 239000013307 optical fiber Substances 0.000 claims description 3
- 238000012512 characterization method Methods 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000001917 fluorescence detection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012306 spectroscopic technique Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6402—Atomic fluorescence; Laser induced fluorescence
- G01N21/6404—Atomic fluorescence
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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Abstract
The invention discloses a semiconductor material atomic point defect detection system and method. The system comprises a solid charge probe unit, a light source, a displacement device and a signal reading device; the solid charge probe unit is a defect unit with different charge states in the semiconductor to be tested; the displacement device is used for moving the semiconductor to be detected in the detection process so that excitation light emitted by the light source irradiates different positions of the semiconductor to be detected; the light source is used for applying excitation light to the solid charge probe unit and a preset detection position of the semiconductor to be detected so as to realize conversion and reading of charge states of the solid charge probe unit; the signal reading device is used for determining the atomic point defect distribution of the semiconductor to be detected according to the charge state information of the solid charge probe unit. According to the technical scheme, the solid charge unit is used as a probe, and the change of the charge state of the solid charge probe unit is realized through the excitation of the atomic point defects, so that the detection and characterization of the space distribution of the semiconductor atomic defects are realized.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor material detection, in particular to a semiconductor material atomic point defect detection system and method.
Background
Carrier distribution and defect detection methods in semiconductors are of great importance for improving device performance, and as structures become more complex and smaller in size, so too are the requirements for detection means of defects and charges in semiconductor devices or samples.
In the prior art, conventional detection methods include electrical measurement, fluorescence detection, cathodoluminescence, high resolution transmission electron microscopy imaging, three-dimensional atom probe chromatography, scanning diffusion resistance microscopy and the like. Wherein the majority of electrical measurements are focused on macroscopic properties of the device; fluorescence detection means such as raman spectroscopy and the like detect the presence of defects such as dislocation or the like generated by stacking atoms in a sample by photoluminescence, but at the same time have a limitation in that a defect structure without fluorescence cannot be detected; the X-ray spectroscopic technique can determine the type and density of impurities by the principle that primary X-rays incident on a sample are absorbed by electrons emitted from an atomic K-shell, but has low resolution; cathode luminescence is a process in which a material emits photons characteristic of visible light upon electron bombardment, and has the disadvantage that the surface is easily damaged by electrons; although the transmission electron microscope, the atom probe and the like can detect on a smaller scale, the detection method is limited by factors such as defect type information, sample processing requirements and the like, for example, a high-resolution transmission electron microscope imaging technology provides atomic-size-level structural information lattice imaging, and the detection method is widely applied to an analysis interface structure, but the sample is required to be thin enough, and meanwhile, new defects can be introduced to the sample by too strong electron beams; the diffusion resistance microscope can obtain defect information by visualizing the shape and local resistance distribution of the sample surface by applying the principle of a contact atomic force microscope, but single defect level characterization cannot be achieved yet.
Thus, there is still a lack of non-destructive inspection methods for semiconductor atomic level defects that are free of special processing requirements in the prior art.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a system and a method for detecting atomic point defects of a semiconductor material, which adopt solid-state charge units as probes and realize detection and characterization of carrier and atomic point defect spatial distribution in the semiconductor through control of charge state properties in the material.
In a first aspect, an embodiment of the present invention provides a semiconductor material atomic point defect detection system, including:
a solid state charge probe unit, a light source, a displacement device and a signal reading device;
the solid charge probe unit is a defect unit with different charge states in the semiconductor to be tested;
the displacement device is used for moving the semiconductor to be tested in the detection process so that excitation light emitted by the light source irradiates different positions of the semiconductor to be tested;
the light source is used for applying excitation light to the solid charge probe unit and a preset detection position of the semiconductor to be detected so as to realize conversion and reading of charge states of the solid charge probe unit;
the signal reading device is used for reading the charge state information of the solid charge probe unit and obtaining the atomic point defect distribution of the semiconductor to be detected according to the read charge state information.
Optionally, the solid state charge probe unit is a double vacancy colour centre in silicon carbide.
Optionally, the displacement device is a nano displacement table.
Optionally, the light source includes a visible light source and a near infrared light source;
the visible light source is used for applying visible light to the solid charge probe unit and a preset detection position of the semiconductor to be detected respectively;
the near infrared light source is used for applying near infrared light to the solid charge probe unit so as to acquire charge state information of the solid charge probe unit and send the charge state information to the signal reading device.
Optionally, the signal readout device includes a lens, a collimator, and a single photon detector that are sequentially disposed;
the fluorescent signal emitted after the near infrared light is incident to the fixed charge probe is focused by the lens and then converged on the collimator, and then transmitted to the single photon detector through the optical fiber, wherein the single photon detector is used for detecting the fluorescent signal so as to obtain the charge state information of the solid charge probe unit.
In a second aspect, an embodiment of the present invention further provides a method for detecting atomic point defects and carrier distribution of a semiconductor material, which is applied to the system described in any one of the above embodiments, including:
s1, arranging a semiconductor to be tested on a displacement device;
s2, the visible light emitted by the visible light source is incident to a solid charge probe unit of the semiconductor to be tested, and a bright state initialization value of the solid charge probe unit is obtained;
s3, moving the semiconductor to be detected through the displacement device so that light emitted by the visible light source is incident to a preset detection position of the semiconductor to be detected;
s4, moving the displacement device to reset the semiconductor to be detected, applying near infrared light to the solid charge probe unit through the near infrared light source to read the charge state of the solid charge probe unit, and sending the read result to the signal reading device;
and repeating S2-S4 until detection of all preset detection positions is completed.
The invention has the beneficial effects that:
the invention realizes the detection of environmental defects and the representation of carriers by utilizing the charge state conversion of the solid charge probe units in the semiconductor material, and has the characteristics of high resolution, non-destructiveness, full-light reading and the like. Compared with the traditional method, the method can realize imaging of the atomic point defects and does not depend on fluorescence of the detected defects. Meanwhile, the imaging mode in the invention uses a full-light reading mode, an electrode is not required to be prepared, the distribution behavior of carriers and defects in the material can be seen by directly imaging a sample, and the method has no complex process requirements on a detection platform and is a novel method for detecting the atomic point defects of the semiconductor.
Drawings
FIG. 1 is a diagram illustrating an overall structure of a system for detecting atomic point defects of a semiconductor material according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing a relationship between a semiconductor to be tested and a displacement device according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an optical path structure of a light source according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a signal readout device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a charge state manipulation and environmental defect distribution imaging sequence according to an embodiment of the present invention;
1, a semiconductor to be tested; 2. defects to be detected which may be present; 3. a solid state charge probe unit; 4. a displacement device; 5. a visible light laser; 6. a half-wave plate; 7. a polarizing beam splitter; 8. a first diaphragm; 9. a first acousto-optic modulator; 10. a second diaphragm; 11. a 1/4 lambda plate; 12. a first mirror; 13. a second mirror; 14. a third mirror; 15. a near infrared laser; 16. a fourth mirror; 17. a fifth reflecting mirror; 18. a second acoustic optical modulator; 19. a dichroic mirror; 20. a first collimator; 21. a lens; 22. a second collimator; 23. a single photon detector.
Description of the embodiments
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Examples
Fig. 1 is an overall structure diagram of a semiconductor material atomic point defect detection system according to an embodiment of the present invention. Specifically, the system comprises: a solid state charge probe unit, a light source, a displacement device and a signal readout device.
The solid-state charge probe unit is a defect unit with different charge states in the semiconductor to be tested. The atomic point defect in the semiconductor is a carrier source, and the change of the charge state of the solid charge probe unit can be realized by exciting the atomic point defect, so that the atomic point defect distribution of the surrounding environment of the solid charge probe unit in the semiconductor to be detected can be read out by imaging.
In this embodiment, silicon carbide is taken as an example, and silicon carbide is taken as a third-generation semiconductor material, so that the silicon carbide has the characteristics of high critical magnetic field, high electron saturation velocity, extremely high thermal conductivity and the like, can be used for manufacturing high-voltage-resistance and high-power electronic devices such as MOSFETs and the like, and has important significance in terms of manufacturing related devices.
In this embodiment, the solid-state charge probe unit may be a double-vacancy color center in silicon carbide, and the conversion of the charge state of the double-vacancy color center may be achieved by exciting the atomic point defect in the silicon carbide by using the light source, so that the atomic point defect distribution in the surrounding environment of the double-vacancy color center in the silicon carbide may be read out by imaging.
With continued reference to fig. 2, the semiconductor 1 to be tested is disposed on the displacement device 4, and the semiconductor 1 to be tested includes the solid-state charge probe unit 3 and the possible defect 2 to be tested.
The displacement device 4 is used for moving the semiconductor 1 to be tested in the detection process, so that the excitation light emitted by the light source irradiates different positions of the semiconductor 1 to be tested. Optionally, the displacement device 4 is a nano displacement table, and is used for changing the position of the semiconductor 1 to be tested with high spatial resolution.
Further, the light source is used for applying excitation light to the solid charge probe unit and a preset detection position of the semiconductor to be detected, so that the solid charge probe unit can be switched between different charge states.
The preset detection positions are preset before detection is started, and all detection positions of the semiconductor to be detected can be covered.
The light source in this embodiment includes a visible light source and a near infrared light source, optionally, the wavelength of the near infrared light source is 1000nm and the wavelength of the visible light is 710nm.
The visible light source is used for applying visible light to the solid charge probe unit and a preset detection position of the semiconductor to be detected; the near infrared light source is used for applying near infrared light to the solid charge probe unit so as to acquire charge state information of the solid charge probe unit and send the charge state information to the signal reading device.
Fig. 3 provides a schematic diagram of the optical path structure of a light source, visible light is emitted by the visible light laser 5, the emitted light enters the polarizing beam splitter 7 through the half-wave plate 6, then enters the first acousto-optic modulator 9 after being focused by the lens, selectively passes through the first-order diffraction spot by the second diaphragm 10, is reflected by the first reflecting mirror 12 after passing through the 1/4 lambda-wave plate 11, passes through the first acousto-optic modulator 9, passes through the first diaphragm 8, enters the polarizing beam splitter 7 again to be reflected, and then enters the dichroic mirror 19 after passing through the second reflecting mirror 13 and the third reflecting mirror 14 to be transmitted.
Near infrared light is emitted by the near infrared laser 15, and the emitted light enters the second acoustic modulator 18 through the fifth mirror 17 and the fourth mirror 16, and is reflected by the dichroic mirror 19 into the first collimator 20.
The signal reading device is used for reading the charge state information of the solid charge probe unit and obtaining the atomic point defect distribution of the semiconductor to be detected according to the read charge state information.
The signal readout device can be read out using fluorescence, see fig. 4, and comprises a lens 21, a second collimator 22 and a single photon detector 23 arranged in this order.
The fluorescent signal emitted after the near infrared light is incident to the fixed charge probe is focused by the lens 21 and then converged on the second collimator 22, and then transmitted to the single photon detector 23 through the optical fiber, wherein the single photon detector 23 is used for detecting the fluorescent signal so as to obtain the charge state information of the solid charge probe unit.
Further, an embodiment of the present invention further provides a method for detecting atomic point defects and carrier distribution of a semiconductor material, which is applied to the system described in any one of the foregoing embodiments, and includes:
s1, arranging the semiconductor to be tested on the displacement device.
S2, the visible light emitted by the visible light source is incident to the solid-state charge probe unit of the semiconductor to be tested, and the bright state initialization value of the solid-state charge probe unit is obtained.
S3, moving the semiconductor to be detected through the displacement device so that light emitted by the visible light source is incident to a preset detection position of the semiconductor to be detected.
S4, moving the displacement device to reset the semiconductor to be detected, applying near infrared light to the solid charge probe unit through the near infrared light source to read the charge state of the solid charge probe unit, and sending the read result to the signal reading device;
and repeating S2-S4 until detection of all preset detection positions is completed.
Taking silicon carbide as an example, the double vacancy colour centre in silicon carbide is a solid state charge probe unit of silicon carbide. First, a silicon carbide semiconductor was placed on a displacement device, and the sequence of the experiments is shown in fig. 5. The visible light emitted by the visible light source is firstly incident on the double-vacancy color center to initialize the bright state, and the position of the double-vacancy color center is recorded as (x) 0 ，y 0 ) Changing the position of the light path irradiated in the silicon carbide by the displacement device, and recording the updated position as (x) i ，y i ). After the movement, the visible light source is turned on again to excite the possible atomic point defects in the silicon carbide, and the diffusion of the atomic point defects may change (x 0 ，y 0 ) The charge state of the color center. The silicon carbide is then reset by a displacement device, and a near infrared light pair (x 0 ，y 0 ) The charge state at the position is read out and the read-out count is recorded as P i The count is reactive (x i ，y i ) Point defects at the location or carrier generation. Specifically, when the detection position (x i ，y i ) When there is an atomic point defect, (x) 0 ，y 0 ) The difference between the charge state at the time of initialization and the bright state thereof can be obtained by reading the count P i To characterize, when atomic point defects at different positions are excited, the change of charge states at the bicolor core vacancies is also different, the corresponding readout counts are also different, and the different readout counts are displayed in the form of intensity by the signal readout device.
Each time the sequence execution is completed, the change (x i ，y i ) The sequence is repeatedly performed at the position of the solid charge probe unit, and finally an intensity pattern of the vicinity of the solid charge probe unit is obtained, wherein the intensity pattern can react with the color center (x 0 ，y 0 ) Carrier and semiconductor point defect distribution in the vicinity. According to the embodiment, the detection position is changed to correlate the signal intensity with the position moved by the displacement device, so that the charge environment distribution around the semiconductor material solid charge probe unit and atomic point defect imaging can be obtained.
The invention adopts the solid charge unit as a probe to perform charge state control, realizes detection and characterization of carrier and atomic point defect space distribution in a semiconductor to be detected such as silicon carbide, and is a novel atomic point defect characterization means in semiconductor materials; in addition, the invention adopts all-optical reading, has no complex processing requirement, and provides a new method for understanding the researches on carrier and atomic point defect distribution, carrier dynamics and the like in the semiconductor device material.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (4)
1. A semiconductor material atomic point defect detection system, comprising:
a solid state charge probe unit, a light source, a displacement device and a signal reading device;
the solid charge probe unit is a defect unit with different charge states in the semiconductor to be tested;
the displacement device is used for moving the semiconductor to be tested in the detection process so that excitation light emitted by the light source irradiates different positions of the semiconductor to be tested;
the light source is used for applying excitation light to the solid charge probe unit and a preset detection position of the semiconductor to be detected so as to realize conversion and reading of charge states of the solid charge probe unit;
the signal reading device is used for reading the charge state information of the solid charge probe unit and obtaining the atomic point defect distribution of the semiconductor to be detected according to the read charge state information;
the solid charge probe unit is a double-vacancy color center in silicon carbide;
the light source comprises a visible light source and a near infrared light source;
the visible light source is used for applying visible light to the solid charge probe unit and a preset detection position of the semiconductor to be detected respectively;
the near infrared light source is used for applying near infrared light to the solid charge probe unit so as to acquire charge state information of the solid charge probe unit and send the charge state information to the signal reading device.
2. The system of claim 1, wherein the displacement device is a nano-displacement table.
3. The system of claim 1, wherein the signal readout device comprises a lens, a collimator, and a single photon detector disposed in sequence;
the fluorescent signals emitted after the near infrared light is incident to the fixed charge probe unit are focused by the lens, converged on the collimator and then transmitted to the single photon detector through the optical fiber; the single photon detector is used for detecting fluorescent signals so as to obtain charge state information of the solid charge probe unit.
4. A method for detecting atomic point defects and carrier distribution of a semiconductor material, applied to the system as claimed in any one of claims 1 to 3, comprising:
s1, arranging a semiconductor to be tested on a displacement device;
s2, the visible light emitted by the visible light source is incident to a solid charge probe unit of the semiconductor to be tested, and a bright state initialization value of the solid charge probe unit is obtained;
s3, moving the semiconductor to be detected through the displacement device so that light emitted by the visible light source is incident to a preset detection position of the semiconductor to be detected;
s4, moving the displacement device to reset the semiconductor to be detected, applying near infrared light to the solid charge probe unit through the near infrared light source to read the charge state of the solid charge probe unit, and sending the read result to the signal reading device;
and repeating S2-S4 until detection of all preset detection positions is completed.
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