CN116952225A - MEMS inertial device, sensor, detection device and manufacturing method thereof - Google Patents
MEMS inertial device, sensor, detection device and manufacturing method thereof Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
- G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
- G01C21/12—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
- G01C21/16—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
- G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
- G01C21/12—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
- G01C21/16—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
- G01C21/166—Mechanical, construction or arrangement details of inertial navigation systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
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Abstract
The invention relates to the technical field of micro-electromechanical systems, in particular to an MEMS (micro-electromechanical system) inertial device, a sensor, a detection device and a manufacturing method thereof. The invention sets the structure layers of the multi-layer device up and down, and bonds the structure layers through the connecting layers, thereby increasing the capacitance area, improving the sensitivity of the device, reducing the occupied area of the MEMS inertial device and improving the mechanical shock resistance.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to an MEMS inertial device, a sensor, a detection device and a manufacturing method thereof.
Background
The MEMS gyroscope in the inertial device is a sensor for measuring the relative spatial angular rate of the carrier, and can sense and measure the angular motion state and change of the carrier; MEMS accelerometers are sensors that measure the linear acceleration of a carrier, and can sense and measure the linear motion state and changes of the carrier.
MEMS accelerometers and MEMS gyroscopes are devices that are capable of measuring linear acceleration of an object, and are typically composed of a mass, a damper, an elastic element, a sensing element, and an adaptive circuit. The larger the capacitance value in the sensitive element is, the stronger the signal detection capability is, and the higher the sensitivity of the device is. The existing MEMS inertial device structure adopts a planar layout mode, the planar MEMS inertial device design occupies a larger area of the sensor, the area of the device is large, the mechanical impact resistance is poor, the metal wiring can be long, the noise is influenced to a certain extent, the process manufacturing yield is influenced, and the cost saving and the miniaturization of an integrated system are not facilitated.
Disclosure of Invention
The invention aims to provide an MEMS inertial device, a sensor, a detection device and a manufacturing method thereof, which can improve the sensitivity of the device and reduce the occupied area.
In order to achieve the above purpose, the technical scheme of the invention is that the MEMS inertial device is characterized in that at least two device structure layers are bonded between the substrate and the cover plate, and adjacent device structure layers are bonded through a connecting layer.
As an embodiment, the device structure layer includes a mass structure and a movable structure, and the mass structures of adjacent device structure layers are bonded through the connection layer.
As an implementation mode, one end of the mass block structure is provided with a first bonding area used for bonding the connecting layer, and the substrate is provided with a second bonding area used for bonding the other end of the mass block structure.
As an embodiment, the connection layer is provided with conductive pillars for bonding with the mass structures of the adjacent device structure layers.
As an embodiment, the device structure layer further comprises a sealing ring structure, the mass block structure and the movable structure are located in the sealing ring structure, and a first bonding ring is arranged at one end of the sealing ring structure and used for bonding one side of the connecting layer; the other side of the connecting layer/the substrate/the cover plate is provided with a second bonding ring for bonding the other end of the sealing ring structure.
As an embodiment, a metal pad is further disposed on the substrate, and the metal pad is located outside the second bonding ring.
The invention also provides a manufacturing method of the MEMS inertial device, which comprises the following steps:
s1, manufacturing a device structure layer;
s2, manufacturing a substrate, and bonding a device structure layer on the substrate;
s3, manufacturing a connecting layer, and bonding the device structure layer with the structure obtained in the step S2 into a connecting layer;
s4, manufacturing a cover plate, and bonding a device structure layer on the cover plate;
and S5, bonding the device structure layer with the structure obtained in the step S4 with the connection layer with the structure obtained in the step S3 to obtain the MEMS inertial device.
In one embodiment, in step S3, after the device structure layer of the structure obtained in step S2 is bonded to a connection layer, the device structure layer and the connection layer are sequentially and alternately bonded to the connection layer.
The invention also provides a MEMS inertial sensor, which comprises a gyroscope and an accelerometer, wherein the gyroscope and the accelerometer adopt any MEMS inertial device, and the gyroscope and the accelerometer are bonded through a common cover plate.
The invention also provides an inertia detection device which comprises the special integrated circuit and the MEMS inertia sensor, wherein the gyroscope and the accelerometer are respectively connected with the special integrated circuit.
Compared with the prior art, the invention has the following beneficial effects:
(1) The MEMS inertial device of the invention has the advantages that the structural layers of the multilayer device are arranged up and down and are bonded through the connecting layer, so that the capacitance area can be increased, the sensitivity of the device can be improved, the occupied area of the MEMS inertial device can be reduced, and the mechanical impact resistance can be improved;
(2) The invention can reduce metal wiring, thereby reducing parasitic capacitance and parasitic resistance, reducing noise and improving the performance of the sensor;
(3) The device of the invention has small occupied area, is beneficial to improving the process manufacturing yield, saving the cost and miniaturizing the integrated system;
(4) The gyroscope and the accelerometer are arranged in an upper layer and a lower layer, and are bonded together through a semiconductor process and a common cover plate, so that the size of the sensor can be effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a device structure layer fabrication process according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a substrate fabricated and bonded to a device structure layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the fabrication of a connection layer and bonding with a device structure layer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a cover plate fabricated and bonded to a device structure layer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram (two-layer) of a MEMS inertial device according to an embodiment of the present invention;
FIG. 6 is a schematic diagram (three-layer) of a MEMS inertial device according to an embodiment of the present invention;
FIG. 7 is a schematic diagram (multi-layer) of a MEMS inertial device according to an embodiment of the present invention;
FIG. 8 is a schematic diagram (three-layer) of a MEMS inertial sensor according to an embodiment of the present invention;
in the figure: 1. a device structure layer; 11. a mass block structure; 12. a movable structure; 13. a seal ring structure; 14. a device silicon wafer; 15. a first bonding region; 16. a first bonding ring; 2. a substrate; 21. a substrate wafer; 22. a second bonding region; 23. a second bonding ring; 24. a metal pad; 3. a connection layer; 31. a connection layer wafer; 32. a conductive post; 4. a cover plate; 41. and a cover wafer.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second" may include one or more such features, either explicitly or implicitly; in the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
Example 1
As shown in fig. 1 to 7, the present embodiment provides a MEMS inertial device, which includes a substrate 2 and a cover plate 4, at least two device structure layers 1 are bonded between the substrate 2 and the cover plate 4, and adjacent device structure layers 1 are bonded through a connection layer 3. Specifically, the device structure layer 1 near the substrate 2 is bonded to the substrate 2, the device structure layer 1 near the cover plate 4 is bonded to the cover plate 4, and adjacent device structure layers 1 are bonded through the connection layer 3. The MEMS inertial device of the embodiment is provided with the multi-layer device structure layer 1 up and down and is bonded through the connecting layer 3, so that the capacitance area can be increased, the sensitivity of the device is improved, the occupied area of the MEMS inertial device can be reduced, and the mechanical shock resistance is improved. The MEMS gyroscope and the MEMS accelerometer can adopt the structural form of the MEMS inertial device of the embodiment, and the occupied area is small, thereby being beneficial to improving the process manufacturing yield, saving the cost and miniaturizing the integrated system.
As an embodiment, the device structure layer 1 includes a mass structure 11 and a movable structure 12, and the mass 11 structures of adjacent device structure layers 1 are bonded through the connection layer 3. Specifically, the mass block structures 11 and the movable structures 12 are multiple, one end of the mass block structure 11 positioned between the cover plate 4 and the connecting layer 3 is bonded with the connecting layer 3, and a space is reserved between the other end of the mass block structure 11 and the cover plate 4; the substrate 2 and the connecting layer 3 are respectively bonded at two ends of the mass block structure 11 between the substrate 2 and the connecting layer 3; the two ends of the mass structure 11 between the two connecting layers 3 are respectively bonded with the connecting layers 3 on the two sides. In the embodiment, the mass block structures 11 of the multilayer device structure layer 1 are bonded through the connecting layer 3, the mass block structures in the device structure layer are arranged up and down and bonded, the capacitance area is increased, the number of the mass blocks is increased, the capacitance of the mass blocks is increased, the sensitivity of the device is improved, the area of the device is reduced, and the cost is saved by a longitudinal layout bonding mode.
Further, a first bonding area 15 is arranged at one end of the mass block structure 11 and used for bonding the connection layer 3, and a second bonding area 22 is arranged on the substrate 2 and used for bonding the other end of the mass block structure 11; the first bonding area 15 and the second bonding area 22 are plural and correspond to each other one by one. Further, the connection layer 3 is provided therein with conductive posts 32 for bonding the mass structures 11 of the adjacent device structure layers 1. Specifically, one end of the mass block structure 11 of each device structure layer 1 is provided with a first bonding area 15, the substrate 2 is provided with a second bonding area 22, each connecting layer 3 is provided with a conductive column 32, and other connecting layers 3 except one connecting layer 3 close to the cover plate 4 are provided with third bonding areas; one end of the mass block structure 11 of the device structure layer 1 positioned between the connecting layer 3 and the cover plate 4 is bonded with the conductive column 32 of the connecting layer 3, and a gap is reserved between the other end and the cover plate 4; the first bonding area 15 at one end of the mass block structure 11 of the device structure layer 1 between the two connecting layers 3 is bonded with the conductive column 32 in the connecting layer 3 at one side, and the other end is bonded with the third bonding area on the connecting layer 3 at the other side; one end of the mass structure 11 of the device structure layer 1 located between the connection layer 3 and the substrate 2 is bonded to the conductive stud 32 in the connection layer 3, and the other end is bonded to the second bonding region 22 on the substrate 2. In this embodiment, the mass block structures 11 of the adjacent device structure layers 1 are bonded through the conductive columns 32 in the connection layer 3, so that the metal wiring is short, parasitic capacitance and parasitic resistance can be reduced, noise is reduced, and the performance of the sensor is improved.
Further, the device structure layer 1 further includes a seal ring structure 13, the mass block structure 11 and the movable structure 12 are located in the seal ring structure 13, one end of the seal ring structure 13 is bonded to the connection layer 3 on one side thereof, and the other end of the seal ring structure 13 is bonded to the connection layer 3/the substrate 2/the cover plate 4 on the other side thereof. In this embodiment, the device structure layer 1 is sealed between the substrate 2 and the connection layer 3, between the cover plate 4 and the connection layer 3, or between the connection layer 3 and the connection layer 3 by the seal ring structure 13.
Further, one end of the seal ring structure 13 is provided with a first bonding ring 16 for bonding one side of the connection layer 3; a second bonding ring 23 is arranged on the other side of the connection layer 3/the substrate 2/the cover plate 4 for bonding the other end of the sealing ring structure 13. Specifically, the other connecting layers 3 except the connecting layer 3 close to the cover plate 4 are provided with second bonding rings; a first bonding ring 16 positioned at one end of a sealing ring structure 13 of the device structure layer 1 between the connecting layer 3 and the cover plate 4 is bonded with the connecting layer 3, and the other end is bonded with a second bonding ring on the cover plate 4; the first bonding ring 16 at one end of the sealing ring structure 13 of the device structure layer 1 between the two connecting layers 3 is bonded with the connecting layer 3 at one side, and the other end is bonded with the second bonding ring on the connecting layer 3 at the other side; a first bonding ring 16 at one end of the sealing ring structure 13 of the device structure layer 1 between the connection layer 3 and the substrate 2 is bonded to the connection layer 3 and the other end is bonded to a second bonding ring 23 on the substrate 2.
As an embodiment, a metal pad 24 is further disposed on the substrate 2, and the metal pad 24 is located outside the second bonding ring 23. The inertial device is connected to the asic through metal pads 24.
Example two
The present embodiment provides a method for manufacturing a MEMS inertial device described in the first embodiment, which is described with reference to the device structure layer 1 as two layers, and includes the following steps:
s1, manufacturing a device structure layer 1, as shown in FIG. 1;
s101, providing a device silicon wafer 14;
s102, thinning and cleaning the device silicon wafer 14;
s103, etching a first bonding area 15 and a first bonding ring 16 on the device silicon wafer 14, wherein the first bonding area 15 is positioned in the first bonding ring 16, and the etching depth is 2-8 um;
s104, etching the mass block structure 11, the movable structure 12 and the sealing ring structure 13 to obtain a device structure layer 1;
s2, manufacturing a substrate 2, and bonding a device structure layer 1 on the substrate 2, as shown in FIG. 2;
s201, providing a substrate wafer 21;
s202, thinning and cleaning the substrate wafer 21;
s203, depositing metal on the substrate wafer 21, manufacturing wires, and etching the second bonding region 22 and the second bonding ring 23;
s204, depositing metal pads 24 on two sides of the substrate wafer 21 to obtain a substrate 2;
s205, bonding a device structure layer 1 on a substrate 2, specifically bonding a mass block structure 11 and a sealing ring structure 13 of the device structure layer 1 with a second bonding region 22 and a second bonding ring 23 of a substrate wafer 21 obtained in the step S204 respectively;
s3, manufacturing a connecting layer 3, and bonding the device structure layer 1 with the structure obtained in the step S2 into the connecting layer 3, as shown in FIG. 3;
s301, providing a connection layer wafer 31;
s302, thinning and cleaning the connection layer wafer 31;
s303, etching a bonding area on the connection layer wafer 31;
s304, etching silicon by utilizing a TSV process to form TSV holes, and depositing conductive materials to form conductive columns 32 to obtain a connecting layer 3;
s305, bonding a connecting layer 3 on the device structure layer 1 with the structure obtained in the step S2, specifically bonding the first bonding region 15 and the first bonding ring 16 with the structure obtained in the step S206 with the connecting layer 3 respectively;
s4, manufacturing a cover plate 4, and bonding a device structure layer 1 on the cover plate 4, as shown in FIG. 4;
s401, providing a cover plate wafer 41;
s402, thinning and cleaning the cover plate wafer 41;
s403, etching a second bonding ring on the cover plate wafer 41 to an etching depth of 5-20 um to obtain a cover plate 4;
s404, bonding a device structure layer 1 on the cover plate 4, specifically bonding the device structure layer 1 with the second bonding ring of the cover plate wafer 41 obtained in the step S403;
s5, bonding the first bonding area 15 and the first bonding ring 16 of the device structure layer 1 with the structure obtained in the step S404 with the connecting layer 3 with the structure obtained in the step S305 to obtain the MEMS inertial device, as shown in FIG. 5.
As shown in fig. 6 and 7, when the device structure layer 1 is larger than two layers, in step S3, after the device structure layer 1 of the structure obtained in step S2 is bonded to a connection layer 3, the device structure layer 1 and the connection layer 3 are sequentially and alternately bonded to the connection layer 3, and then the connection layer 3 at the uppermost part of the obtained structure is bonded to the device structure layer 1 of the structure obtained in step S404.
The manufacturing method of the embodiment can integrate and manufacture miniaturized high-precision MEMS inertial devices which have low cost and can be produced in batches, and the MEMS inertial devices are arranged up and down by the structural layers of the multilayer devices, so that the occupied area of the MEMS inertial devices can be reduced, and the mechanical impact resistance can be improved; and the mass block structures 11 of the adjacent device structure layers are bonded through the conductive columns 32 in the connecting layer 3, so that the metal wiring is short, noise can be reduced, and the detection precision of the sensor is improved.
Example III
As shown in fig. 8, the present invention further provides a MEMS inertial sensor, which includes a gyroscope and an accelerometer, where the gyroscope and the accelerometer both use the MEMS inertial device provided in the first embodiment, and the gyroscope and the accelerometer share the cover plate 4.
In the embodiment, the gyroscope and the accelerometer are distributed on the two sides of the cover plate 4 in an upper layer and a lower layer, and are bonded together by sharing the cover plate 4 through a semiconductor process, so that the size of the MEMS inertial sensor can be effectively reduced; meanwhile, the gyroscope and the accelerometer adopt the structural form of the MEMS inertial device in the first embodiment, and the structural layers of the multilayer device are arranged up and down, so that the occupied area of the MEMS inertial device can be reduced, the mechanical shock resistance is improved, the metal wiring is short, the parasitic capacitance and parasitic resistance can be reduced, the noise is reduced, and the performance of the sensor is improved.
The MEMS inertial sensor of the embodiment is beneficial to realizing miniaturization of an integrated system, can be manufactured in an integrated way, is beneficial to saving the cost of the sensor, and can be widely applied to the fields of inertial navigation, unmanned aerial vehicles, automatic driving, intelligent manufacturing and high-end industry.
Example IV
The invention also provides an inertial detection device, which comprises an application specific integrated circuit and the MEMS inertial sensor provided by the third embodiment, wherein the gyroscope and the accelerometer are respectively connected with the application specific integrated circuit.
Specifically, metal pads corresponding to the metal pads 24 on the gyroscope substrate 2 and the metal pads 24 on the accelerometer substrate 2 are provided on the application specific integrated circuit, respectively, and the metal pads on the application specific integrated circuit are connected to the metal pads 24 of the gyroscope and the accelerometer, respectively.
In this embodiment, the accelerometer may be on top, the gyroscope may be on bottom and close to the asic, or the gyroscope may be on top, the accelerometer may be on bottom and close to the asic, where in both embodiments, the metal pad 24 on the substrate 2 close to the asic is soldered to the corresponding metal pad on the asic, and the metal pad 24 on the substrate 2 far from the asic is soldered to the corresponding metal pad on the asic by a wire.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (10)
1. A MEMS inertial device comprising a substrate and a cover plate, characterized in that: at least two device structure layers are bonded between the substrate and the cover plate, and adjacent device structure layers are bonded through a connecting layer.
2. The MEMS inertial device of claim 1, wherein: the device structure layers comprise mass block structures and movable structures, and the mass block structures of adjacent device structure layers are bonded through the connecting layers.
3. The MEMS inertial device of claim 2, wherein: one end of the mass block structure is provided with a first bonding area used for bonding the connecting layer, and the substrate is provided with a second bonding area used for bonding the other end of the mass block structure.
4. The MEMS inertial device of claim 2, wherein: and the connecting layer is provided with a conductive column for bonding a mass block structure of the adjacent device structure layer.
5. The MEMS inertial device of claim 2, wherein: the device structure layer further comprises a sealing ring structure, the mass block structure and the movable structure are located in the sealing ring structure, and a first bonding ring is arranged at one end of the sealing ring structure and used for bonding one side of the connecting layer; the other side of the connecting layer/the substrate/the cover plate is provided with a second bonding ring for bonding the other end of the sealing ring structure.
6. The MEMS inertial device of claim 5, wherein: and a metal bonding pad is also arranged on the substrate and is positioned outside the second bonding ring.
7. A method of manufacturing a MEMS inertial device according to any one of claims 1 to 6, comprising the steps of:
s1, manufacturing a device structure layer;
s2, manufacturing a substrate, and bonding a device structure layer on the substrate;
s3, manufacturing a connecting layer, and bonding the device structure layer with the structure obtained in the step S2 into a connecting layer;
s4, manufacturing a cover plate, and bonding a device structure layer on the cover plate;
and S5, bonding the device structure layer with the structure obtained in the step S4 with the connection layer with the structure obtained in the step S3 to obtain the MEMS inertial device.
8. The method of manufacturing as claimed in claim 7, wherein: in step S3, after the device structure layer of the structure obtained in step S2 is bonded to a connection layer, the device structure layer and the connection layer are sequentially and alternately bonded to the connection layer.
9. A MEMS inertial sensor comprising a gyroscope and an accelerometer, characterized in that: the gyroscope and the accelerometer both employ the MEMS inertial device of any of claims 1-6, and the gyroscope and the accelerometer are bonded by a common cover plate.
10. An inertial detection device, characterized by: comprising an application specific integrated circuit and a MEMS inertial sensor according to claim 9, said gyroscope and said accelerometer being respectively connected to said application specific integrated circuit.
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