CN116940226B - Ferroelectric semiconductor device, touch sense memory, and touch data read/write method - Google Patents
Ferroelectric semiconductor device, touch sense memory, and touch data read/write method Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H—ELECTRICITY
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Abstract
The invention discloses a ferroelectric semiconductor device, a touch sense memory and a touch data read-write method, wherein the ferroelectric semiconductor device comprises: a dielectric layer including a first surface and an opposite second surface; a ferroelectric semiconductor channel layer disposed on the first surface of the dielectric layer; the source electrode and the drain electrode are respectively arranged on two sides of the first surface of the ferroelectric semiconductor channel layer; a back gate electrode disposed on the second surface of the dielectric layer; the single-electrode friction electrification layer is arranged on the second surface of the back gate electrode; the single-electrode triboelectric layer is connected with the source electrode through a load resistor. By changing the magnitude of the applied tactile stress, the ferroelectric transistor can receive pulse voltage signals with different magnitudes, the ferroelectric polarization direction of the channel material can be regulated and controlled repeatedly and to different degrees by the sense of touch, and further the resistance switching characteristic of the ferroelectric transistor can be regulated, so that the ferroelectric transistor shows various conductivity states, and finally, a ferroelectric device capable of sensing and storing by the sense of touch is developed.
Description
Technical Field
The invention relates to the technical field of ferroelectric semiconductors, in particular to a ferroelectric semiconductor device, a touch sense memory and a touch data reading and writing method.
Background
Ferroelectric materials are widely used in nonvolatile information storage devices because of their own controllable ferroelectric polarization which enables them to have a variety of stable electrical conduction states. However, ferroelectric materials are greatly limited in their application to stress sensing, storage and computation due to the lack of efficient technical means for stress-mediated ferroelectric polarization. The current mechanical stress regulating ferroelectric polarization turnover mainly scans a certain area of ferroelectric material by applying stress on a probe of an atomic force microscope through a flexoelectric effect, so that the ferroelectric polarization of the area is turned over, however, the pressure of the scanned area is extremely high and is about 10000 atmospheres; the area where ferroelectric polarization is turned over is smaller, and the effect of regulating and controlling the electric conduction state of the device is not obvious only at the nanometer level; the scanning speed of the needle tip directly influences the speed of ferroelectric polarization inversion, and the ferroelectric polarization inversion direction also depends on the initial direction. The above factors make it impossible to implement the ferroelectric polarization with the flip-flop effect at the device level, and it is more difficult to develop research in ultra-low stress sensing, storage and computation.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a ferroelectric semiconductor device, a touch sense memory and a touch data read-write method.
In order to solve the technical problems, the invention is solved by the following technical scheme:
a ferroelectric semiconductor device comprising:
a dielectric layer comprising a first surface and an opposing second surface;
a ferroelectric semiconductor channel layer disposed on a first surface of the dielectric layer;
the source electrode and the drain electrode are respectively arranged on two sides of the first surface of the ferroelectric semiconductor channel layer;
a back gate electrode disposed on the second surface of the dielectric layer;
the single-electrode friction electrification layer is arranged on the second surface of the back gate electrode;
the single-electrode friction electrification layer is connected with the source electrode through a load resistor, and the source electrode is grounded.
As an implementation mode, the material of the single-electrode friction electrification layer is any one of polytetrafluoroethylene, polyimide film, perfluoroethylene propylene copolymer, nylon and acrylic plate.
As one implementation mode, the material of the back gate electrode is any one or more of high-conductivity silicon, indium zinc oxide, indium tin oxide, zinc aluminum oxide, titanium nitride, gold, silver, copper and aluminum.
As an embodiment, the ferroelectric semiconductor channel layer is a two-dimensional semiconductor ferroelectric material layer with a low coercive field, wherein the range of the low coercive field is less than 2000KV/cm.
As an implementation manner, the material of the ferroelectric semiconductor channel layer is two-dimensional ferroelectric semiconductor material alpha-phase indium diselenide.
In one embodiment, the material of the dielectric layer is any one of silicon dioxide, aluminum oxide, and hafnium oxide.
The embodiment of the invention also provides a touch sensing memory, which comprises: at least one ferroelectric semiconductor device as described above.
As an embodiment, when the tactile sensor memory includes a plurality of ferroelectric semiconductor devices, the structures of the plurality of ferroelectric semiconductor devices are identical, and the single electrode triboelectric charging layers of the plurality of ferroelectric semiconductor devices face to the same side, so that the plurality of ferroelectric semiconductor devices simultaneously detect the magnitude of stress pressing the single electrode triboelectric charging layer.
As an embodiment, when there are a plurality of ferroelectric semiconductor devices, the load resistances connected between the single electrode triboelectric charging layer and the source electrode in different ferroelectric semiconductor devices are different, and the materials of the ferroelectric semiconductor channel layers in the corresponding ferroelectric semiconductor devices are different, so that the different ferroelectric semiconductor devices have different tactile stress detection ranges.
The embodiment of the invention also provides a touch data read-write method, which adopts the ferroelectric semiconductor device and comprises the following steps:
generating a pulse voltage signal by sensing and pressing the single-electrode friction electrification layer, and applying the pulse voltage signal to the back gate electrode to enable ferroelectric polarization of the ferroelectric semiconductor channel layer to be inverted;
a scanning voltage is applied between the source electrode and the drain electrode, and channel currents in different ferroelectric polarization inversion states are measured, so that information of the magnitude of each applied tactile stress is obtained.
As an embodiment, after detecting the tactile stress, a reverse pulse voltage signal is applied to the back gate electrode, so that the ferroelectric polarization of the ferroelectric semiconductor channel layer is reversed.
As an implementation manner, when a plurality of ferroelectric semiconductor devices are provided, after the detection of the tactile stress, a reverse pulse voltage signal is applied to the back gate electrode of a part of ferroelectric semiconductor devices, and the ferroelectric polarization of the ferroelectric semiconductor channel layer of the corresponding ferroelectric semiconductor device is reversed, so that the tactile stress is stored again, and the ferroelectric semiconductor device without the application of the reverse pulse voltage signal still stores the information of the previous tactile stress.
Compared with the prior art, the invention has the beneficial effects that:
the invention uses a two-dimensional semiconductor ferroelectric material with low coercive field as a ferroelectric semiconductor channel layer, integrates a single-electrode friction electrification layer to a back gate electrode, adopts a single-electrode mode, and converts stress into a pulse voltage signal when a human body presses the single-electrode friction electrification layer and applies the pulse voltage signal to the back gate electrode so as to enable ferroelectric polarization of the ferroelectric semiconductor channel layer to be overturned. By changing the magnitude of the applied tactile stress, the ferroelectric transistor can receive pulse voltage signals with different magnitudes, the ferroelectric polarization direction of the channel material can be regulated and controlled repeatedly with different degrees by the sense of touch, and the resistance switching characteristic of the ferroelectric transistor can be regulated, so that the ferroelectric transistor shows various conductivity states, and finally, a ferroelectric device capable of sensing and storing by the sense of touch is developed.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a cross-sectional view of a ferroelectric semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for reading and writing haptic data according to an embodiment of the present invention;
FIG. 3 is a graph showing the output of a pulse voltage signal VOUT applied to a ferroelectric semiconductor device each time a different ultra-low stress is applied according to an embodiment of the present invention;
fig. 4 is a graph showing the output of channel current IDS through a ferroelectric semiconductor device at a scan voltage VDS after applying different ultra-low stresses according to an embodiment of the present invention;
fig. 5 is an output curve of a forward pulse voltage signal according to an embodiment of the present invention.
Detailed Description
Embodiments of the present application are described below with reference to the accompanying drawings.
In the embodiments of the present application, words such as "exemplary" or "such as" are used to mean serving as examples, illustrations, or descriptions. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete fashion.
In the embodiments of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.
The term "at least one" in this application means one or more, the term "plurality" in this application means two or more, for example, a plurality of first messages means two or more first messages.
It is to be understood that the terminology used in the description of the various examples described herein is for the purpose of describing particular examples only and is not intended to be limiting. As used in the description of the various described examples and in the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It will also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items. The term "and/or" is an association relationship describing an associated object, and means that there may be three relationships, for example, a and/or B, and may mean: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" in the present application generally indicates that the front-rear association object is an or relationship.
It should also be understood that, in the embodiments of the present application, the sequence number of each process does not mean that the execution sequence of each process should be determined by the function and the internal logic of each process, and should not constitute any limitation on the implementation process of the embodiments of the present application.
The ferroelectric semiconductor device provided by the embodiment of the application can be particularly a ferroelectric device capable of realizing tactile perception and storage, can be used as a basic storage unit, is applied to a nonvolatile memory, further is used for scenes such as the internet of things (internet of things, ioT) and the like, can also be used as a tactile sensor, and is used for scenes such as bionic simulation of a human body tactile system and the like.
The invention uses a two-dimensional semiconductor ferroelectric material with low coercive field as a ferroelectric semiconductor channel layer, integrates a single-electrode friction electrification layer to a back gate electrode, adopts a single-electrode mode, and converts stress into a pulse voltage signal when a human body presses the single-electrode friction electrification layer and applies the pulse voltage signal to the back gate electrode so as to enable ferroelectric polarization of the ferroelectric semiconductor channel layer to be overturned. By changing the magnitude of the applied tactile stress, the ferroelectric transistor can receive pulse voltage signals with different magnitudes, the ferroelectric polarization direction of the channel material can be regulated and controlled repeatedly with different degrees by the sense of touch, and the resistance switching characteristic of the ferroelectric transistor can be regulated, so that the ferroelectric transistor shows various conductivity states, and finally, a ferroelectric device capable of sensing and storing by the sense of touch is developed.
Example 1:
the invention provides an embodiment of the ferroelectric semiconductor device, wherein a section structure diagram of the ferroelectric semiconductor device in the embodiment is shown in fig. 1, and the ferroelectric semiconductor device comprises:
a dielectric layer 10, the dielectric layer 10 comprising a first surface and an opposite second surface;
a ferroelectric semiconductor channel layer 20 provided on the first surface of the dielectric layer 10;
a source electrode 30 and a drain electrode 40 respectively disposed on both sides of the first surface of the ferroelectric semiconductor channel layer 20;
a back gate electrode 50 disposed on the second surface of the dielectric layer 10;
a single electrode triboelectric layer 60 disposed on the second surface of the back gate electrode 50;
wherein the single-electrode triboelectric charging layer 60 is connected with the source electrode 30 through a load resistor 70, and the source electrode is grounded.
In this embodiment, the single electrode triboelectric charging layer 60 is connected to one end of a load resistor, and the other end of the load resistor is connected to the source electrode 30.
In other embodiments, the back gate electrode is connected to one end of a load resistor, and the other end of the load resistor is connected to the source electrode.
The material of the single-electrode friction electrification layer is any one of polytetrafluoroethylene, polyimide film, perfluoroethylene propylene copolymer, nylon, acrylic plate and the like.
In this embodiment, the material of the single-electrode triboelectric charging layer is polytetrafluoroethylene.
In this embodiment, since the single electrode mode is adopted, the human body (finger) directly presses the single electrode triboelectric charging layer connected with the back gate electrode, static electricity carried by the human body can be electrostatically induced with polytetrafluoroethylene in the single electrode triboelectric charging layer when contacting the single electrode triboelectric charging layer, positive/negative friction charges are generated, so that a potential difference is formed, the electrostatically induced charges are caused to flow in the external circuit to form current, the current is converted into a voltage signal through the external load resistor, and the ferroelectric semiconductor device receives a pulse voltage signal when pressed each time. Because the output voltage of the single-electrode friction electrification layer has a strong dependence on the load resistance, proper load resistance and ferroelectric materials are required to be selected, so that the voltage output by the generator under small stress (touch) is in a proper range, a required electric field suitable for regulating and controlling the polarization inversion of the ferroelectric materials can be emitted, and an excessive voltage signal output under large stress pressing can not burn the ferroelectric semiconductor device.
In this embodiment, the ferroelectric semiconductor channel layer is a two-dimensional semiconductor ferroelectric material layer with a low coercive field, wherein the range of the low coercive field is less than 2000KV/cm. The material of the two-dimensional semiconductor ferroelectric material layer is alpha-phase indium diselenide, tungsten ditelluride or d 1T-phase molybdenum ditelluride.
In the present embodiment, two-dimensional ferroelectric semiconductor material α -phase indium diselenide (In 2 Se 3 ) As a semiconductor ferroelectric material layer material, the ferroelectric material has the advantages of small coercive field, easy adjustment of ferroelectric polarization, remarkable two-dimensional material, atomic-level thickness, smooth surface, no dangling bond and the like, and excellent semiconductor property, and can prepare a high-performance ferroelectric transistor. At the same time, the voltage output by the generator can be larger than the alpha-phase indium diselenide (In) 2 Se 3 ) The coercive field of the capacitor is perfectly regulated and controlled, and excessive voltage is not output to cause burning loss. In this embodiment, the resistance value of the load resistor is 20 ohms.
Since the magnitude of the haptic stress in the single electrode mode directly determines the amplitude (in positive correlation) of the output voltage signal of the single electrode triboelectric charging layerThe voltage signals with different amplitudes can regulate the inversion of ferroelectric polarization at the channel to different degrees so that the channel has multiple conductivity states, and the scanning voltage V is applied DS Can output source leakage current I with different magnitudes DS And each electrical conduction state can be maintained for a quite long time, each current corresponds to a touch stress signal in turn, and finally, the direct sensing and storage of touch is realized at the device level.
In this embodiment, the material of the back gate electrode is any one or more of metals such as high-conductivity silicon, indium zinc oxide, indium tin oxide, zinc aluminum oxide, titanium nitride, gold, silver, copper, and aluminum. This is by way of example only and is not intended to limit the embodiments of the present application.
In this embodiment, the dielectric layer 10 is an oxide material, and the oxide material includes at least one of the following: hafnium oxide HfO 2 Zirconium dioxide ZrO 2 Silicon dioxide SiO 2 Aluminum oxide Al 2 O 3 。
Example 2:
the present invention also provides an embodiment of a tactile sense memory, comprising: one or more of the ferroelectric semiconductor devices described above.
When the touch sense memory comprises a plurality of ferroelectric semiconductor devices, the structures of the plurality of ferroelectric semiconductor devices are identical, the plurality of ferroelectric semiconductor devices are packaged together in parallel, and single-electrode friction electrification layers of the plurality of ferroelectric semiconductor devices face to the same side, so that the plurality of ferroelectric semiconductor devices can detect the stress of a human body (finger) pressing the single-electrode friction electrification layers at the same time.
In other embodiments, when the tactile sense memory includes a plurality of ferroelectric semiconductor devices, the structures of the plurality of ferroelectric semiconductor devices are not identical, the load resistances connected between the single electrode triboelectric charging layer and the source electrode in different ferroelectric semiconductor devices are different, the materials of the ferroelectric semiconductor channel layers in corresponding different ferroelectric semiconductor devices are different, the plurality of ferroelectric semiconductor devices are packaged together in parallel, the single electrode triboelectric charging layers of the plurality of ferroelectric semiconductor devices face to the same side, and the plurality of ferroelectric semiconductor devices can simultaneously detect the stress of the single electrode triboelectric charging layer pressed by a human body (finger). However, since the load resistances connected between the single-electrode triboelectric charging layer and the source electrode in different ferroelectric semiconductor devices are different, pulse voltage signals corresponding to the same stress magnitude are also different, and the materials of the ferroelectric semiconductor channel layers in different ferroelectric semiconductor devices are different, the pulse voltage signals corresponding to the same stress magnitude also cause the ferroelectric polarization to be inverted to different degrees, so that the touch sensing memory has a plurality of touch sensing devices with different detection precision.
Example 3:
the invention also provides a flow chart of a method for reading and writing the tactile data, which is shown in the figure 2, and adopts the tactile sensing memory, and comprises the following steps:
step S100, generating a pulse voltage signal by sensing a touch signal pressing the single-electrode friction electrification layer, and applying the pulse voltage signal to the back gate electrode so as to enable ferroelectric polarization of the ferroelectric semiconductor channel layer to be inverted;
in step S200, a scan voltage is applied between the source electrode and the drain electrode, and channel currents in different ferroelectric polarization inversion states are measured, so as to obtain the magnitude of each applied tactile stress.
Step S100 is executed, when a human body (finger) or other objects contact and press the single-electrode triboelectric charging layer, induced charges are transferred between the single-electrode triboelectric charging layer and the source electrode, and the voltage is boosted through a load resistor, so as to obtain a pulse voltage signal VOUT. Because the single electrode friction electrification layer is in direct contact with the back gate electrode, the pulse voltage signal VOUT acts on the back gate electrode, under the drive of the pulse voltage signal VOUT, the ferroelectric semiconductor is polarized based on the direction of the electrode, the ferroelectric polarization of the ferroelectric semiconductor channel layer is overturned, and under the action of different pulse voltage signals VOUT, the ferroelectric polarization of the ferroelectric semiconductor channel layer is overturned to different degrees.
Referring to fig. 3, fig. 3 is a graph showing an output of a pulse voltage signal VOUT applied to a ferroelectric semiconductor device each time a different ultra-low stress is applied according to an embodiment of the present invention. The pulse voltage signal VOUT is a potential difference that increases from zero to generate abrupt changes in several milliseconds and decays rapidly to zero in the following several milliseconds when the human body (finger) is brought into contact with and separated from the single electrode triboelectric layer. In this embodiment, a negative pulse voltage signal VOUT having an amplitude of 0 to-23V can be obtained under an ultra-low stress of 0.8 to 1.8N.
Step S200 is executed, wherein a scanning voltage of-1V to 1V is applied between the source electrode and the drain electrode, and channel currents in different ferroelectric polarization inversion states are measured, so that the magnitude of each applied tactile stress is obtained.
Because the resistances of the ferroelectric semiconductor channel layers are different in different ferroelectric polarization inversion states, different channel currents IDS are obtained by applying scanning voltages of-1V to 1V between the source electrode and the drain electrode, and corresponding tactile stress values are obtained according to the different channel currents IDS.
Referring to fig. 4, fig. 4 is an output curve of a channel current IDS passing through a ferroelectric semiconductor device under a scan voltage VDS after applying different ultra-low stresses. The channel current IDS passing through the ferroelectric semiconductor in the channel layer at the scanning voltage VDS is measured by externally connecting a measuring device to the source electrode and the drain electrode.
Under the condition that no stress is applied, a power supply is externally connected to a source electrode and a drain electrode, a scanning voltage VDS and a corresponding channel current IDS are measured, an initial value of the channel resistance of the ferroelectric semiconductor device when the ferroelectric semiconductor device is not regulated is determined, the initial value refers to a current value when the ferroelectric semiconductor device is not regulated by a generator, and then ultra-low pressures of 0.8N, 1.0N, 1.5N and 1.8N are applied to obtain an output curve of the channel current IDS and the corresponding ferroelectric polarization and polarization inversion conditions of the ferroelectric semiconductor.
Further, after the touch signal is detected, a forward pulse voltage signal which is opposite to the forward pulse voltage signal is applied to the back gate electrode, so that ferroelectric polarization of the ferroelectric semiconductor channel layer is reversed, the current state of the device regulated by the pressure is erased, and the resistance of the device is returned to an initial state, so that the touch signal storage is convenient to carry out again. In this embodiment, referring to fig. 5, the forward pulse voltage signal is a pulse voltage signal with a duration of 0.1s and a voltage of 20V.
When a touch sense memory comprises a plurality of ferroelectric semiconductor devices, after detecting the touch stress, a reverse pulse voltage signal is applied to the back gate electrode of a part of the ferroelectric semiconductor devices, so that ferroelectric polarization of a ferroelectric semiconductor channel layer of the part of the ferroelectric semiconductor devices is reversed, and the touch stress is stored again, and the part of the ferroelectric semiconductor devices which is not applied with the reverse pulse voltage signal still stores the information of the previous touch stress.
Finally, any modification or equivalent replacement of some or all of the technical features by means of the structure of the device according to the invention and the technical solutions of the examples described, the resulting nature of which does not deviate from the corresponding technical solutions of the invention, falls within the scope of the structure of the device according to the invention and the patent claims of the embodiments described.
Claims (11)
1. A ferroelectric semiconductor device, comprising:
a dielectric layer comprising a first surface and an opposing second surface;
a ferroelectric semiconductor channel layer disposed on the first surface of the dielectric layer, the ferroelectric semiconductor channel layer being a two-dimensional semiconductor ferroelectric material layer having a low coercive field, wherein the range of the low coercive field is less than 2000KV/cm;
the source electrode and the drain electrode are respectively arranged on two sides of the first surface of the ferroelectric semiconductor channel layer;
the back gate electrode is arranged on the second surface of the dielectric layer, wherein the first surface of the back gate electrode is opposite to the dielectric layer, and the second surface of the back gate electrode is opposite to the dielectric layer;
the single-electrode friction electrification layer is arranged on the second surface of the back gate electrode;
the single-electrode friction electrification layer is connected with the source electrode through a load resistor and the source electrode is grounded.
2. The ferroelectric semiconductor device according to claim 1, wherein the material of the single-electrode triboelectric charging layer is any one of polytetrafluoroethylene, polyimide film, perfluoroethylene propylene copolymer, nylon, and acryl plate.
3. The ferroelectric semiconductor device according to claim 1, wherein the material of the back gate electrode is any one or more of high conductivity silicon, indium zinc oxide, indium tin oxide, zinc aluminum oxide, titanium nitride, gold, silver, copper, and aluminum.
4. The ferroelectric semiconductor device of claim 1, wherein the material of the ferroelectric semiconductor channel layer is two-dimensional ferroelectric semiconductor material alpha-phase indium diselenide.
5. The ferroelectric semiconductor device according to claim 1, wherein the material of the dielectric layer is any one of silicon dioxide, aluminum oxide, and hafnium oxide.
6. A tactile sense memory, comprising: at least one ferroelectric semiconductor device as claimed in any one of claims 1 to 5.
7. The tactile sensor memory according to claim 6, wherein when the tactile sensor memory comprises a plurality of ferroelectric semiconductor devices, the plurality of ferroelectric semiconductor devices are identical in structure, and the single electrode triboelectric layers of the plurality of ferroelectric semiconductor devices face the same side, so that the plurality of ferroelectric semiconductor devices simultaneously detect the magnitude of stress pressing the single electrode triboelectric layer.
8. The tactile sensor memory according to claim 6, wherein when the tactile sensor memory comprises a plurality of ferroelectric semiconductor devices, the plurality of ferroelectric semiconductor devices are not all identical in structure, load resistances connected between the single electrode triboelectric charging layer and the source electrode are different in different ferroelectric semiconductor devices, and materials of ferroelectric semiconductor channel layers are different in corresponding ferroelectric semiconductor devices, so that different ferroelectric semiconductor devices have different tactile stress detection ranges.
9. A method for reading and writing tactile data, which adopts the tactile sensing memory according to any one of claims 6 to 8, and is characterized by comprising:
generating a pulse voltage signal by sensing a touch signal pressing the single-electrode friction electrification layer, and applying the pulse voltage signal to the back gate electrode so that ferroelectric polarization of the ferroelectric semiconductor channel layer is inverted;
a scanning voltage is applied between the source electrode and the drain electrode, and channel currents in different ferroelectric polarization inversion states are measured, so that the magnitude of each applied tactile stress is obtained and stored.
10. A tactile data writing and reading method according to claim 9, wherein after detecting the tactile signal, a reverse pulse voltage signal is applied to the back gate electrode so that the ferroelectric polarization of the ferroelectric semiconductor channel layer is reversed.
11. The method of claim 9, wherein when the number of ferroelectric semiconductor devices is plural, after detecting the tactile stress, a reverse pulse voltage signal is applied to the back gate electrode of a part of the ferroelectric semiconductor devices and reverse polarization of the ferroelectric semiconductor channel layer of the corresponding ferroelectric semiconductor device is reversed, so that the tactile stress is stored again, and the ferroelectric semiconductor device to which the reverse pulse voltage signal is not applied still stores the information of the previous magnitude of the tactile stress.
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