CN116937944A - Gate driving circuit, driving device and control method of power device - Google Patents
Gate driving circuit, driving device and control method of power device Download PDFInfo
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- CN116937944A CN116937944A CN202210351616.8A CN202210351616A CN116937944A CN 116937944 A CN116937944 A CN 116937944A CN 202210351616 A CN202210351616 A CN 202210351616A CN 116937944 A CN116937944 A CN 116937944A
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- 238000012545 processing Methods 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
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- 230000000694 effects Effects 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The application relates to the technical field of power semiconductor device driving, in particular to a gate electrode driving circuit, a driving device and a control method of a power device.
Description
Technical Field
The application relates to the technical field of power semiconductor device driving, in particular to a gate electrode driving circuit, a driving device and a control method of a power device.
Background
IGBT (Insulated Gate Bipolar Transistor) the insulated gate bipolar transistor is a core power component forming various converters, and the IGBT can work normally only by being matched with a proper driver, and when three types of short circuits occur, the IGBT is easy to turn off.
Literature researches show that the IGBT is easy to fail after three types of short-circuit working conditions occur, and the existing driver has no targeted protection measures for the three types of short-circuit working conditions. This results in reduced reliability of the driver, and thus there is a need in the art for a driver that protects the three types of short circuits of the IGBTs to improve the reliability of the power devices that include the IGBTs.
Disclosure of Invention
The application provides a gate driving circuit, a driving device and a control method of a power device, which solve the technical problem that three types of short circuits of IGBT are difficult to protect in some technical schemes.
In a first aspect, the present application provides a gate driving circuit of a power device, the gate driving circuit comprising: a first switch, a second switch and a third switch;
one end of the first switch is connected with the positive power supply, and the other end of the first switch is connected with one end of the second switch;
the other end of the second switch is connected with a negative power supply;
the gate electrode of the power device is connected to a connecting line between the first switch and the second switch;
one end of the third switch is connected to the positive power supply, and the other end of the third switch is connected to the gate electrode of the power device.
In some embodiments, further comprising: and one end of the driving resistor is connected to a connecting line between the first switch and the second switch, the other end of the driving resistor is connected to the gate electrode of the power device, and the other end of the third switch is connected to a connecting line between the driving resistor and the gate electrode of the power device.
In some embodiments, the first switch is an NPN transistor, the second switch is a PNP transistor, and the third switch is a PMOS transistor.
In some embodiments, the power device is an insulated gate bipolar transistor.
In a second aspect, the present application provides a driving apparatus comprising:
a gate drive circuit of any one of the first aspects;
the logic processing circuit is connected with the gate driving circuit and is used for generating a control signal of the gate driving circuit;
the control signals of the gate driving circuit comprise a control signal of a first switch, a control signal of a second switch and a control signal of a third switch of the gate driving circuit.
In some embodiments, the logic processing circuit includes: the device comprises an in-phase device, a resistor, a capacitor, a diode and an inverter;
the input end of the homophase device receives a control signal of the first switch, and the output end of the homophase device is connected with the control end of the second switch and used for controlling the on-off of the second switch;
one end of the resistor is connected with the output end of the phase inverter, and the other end of the resistor is connected with the input end of the phase inverter;
one end of the capacitor is grounded, and the other end of the capacitor is connected with the input end of the inverter;
the output end of the inverter is connected to the control end of the third switch and used for controlling the on-off of the third switch.
In some embodiments, the logic processing circuit further comprises: and the diode is connected in parallel with two ends of the resistor and used for accelerating the turn-off speed when the power device is turned off.
In some embodiments, the driving device further comprises a short-circuit protection circuit, and the short-circuit protection circuit is respectively connected with the power device and the logic processing circuit and is used for monitoring the terminal voltage of the power device to realize short-circuit protection.
In some embodiments, the driving device further comprises a signal isolation circuit connected to the logic processing circuit for isolating the external signal from the logic circuit.
In some embodiments, the driving device further includes a power isolation circuit, where the power isolation circuit is connected to the gate driving circuit, the logic processing circuit, the short-circuit protection circuit, and the signal isolation circuit, respectively, and is used for electrically isolating the external power and the gate driving circuit, the logic processing circuit, the short-circuit protection circuit, and the signal isolation circuit.
In a third aspect, the present application provides a method for controlling a gate driving circuit, implemented based on the gate driving circuit of any one of the power devices in the first aspect, the method comprising:
closing the first switch and opening the second switch to turn on the power device;
after a preset time delay, the third switch is closed to clamp the voltage of the gate electrode of the power device to the voltage of the positive power supply.
In a fourth aspect, the present application provides a control method of a driving apparatus, implemented based on the driving apparatus of any one of the second aspects, the method comprising:
setting the control signal of the first switch high;
the in-phase device responds to the control signal of the first switch which is set high to set the control signal of the second switch high so as to turn on the power device;
the resistor and the capacitor respond to the control signal of the second switch which is set high, and after delaying for a preset time length, the input end of the inverter is set high so as to set the output end of the inverter to be low;
the third switch is closed in response to the output of the inverter being set low to clamp the voltage of the gate of the power device to the voltage of the positive power supply.
According to the gate driving circuit, the driving device and the control method of the power device, one end of the first switch is connected with the positive power supply, the other end of the first switch is connected with one end of the second switch, the other end of the second switch is connected with the negative power supply, the gate electrode of the power device is connected to a connecting line between the first switch and the second switch, one end of the third switch is connected with the positive power supply, and the other end of the third switch is connected with the gate electrode of the power device, so that the voltage of the gate electrode of the power device can be clamped to the voltage of the positive power supply after the power device is turned on, and even if three types of short circuits occur, the gate electrode can be charged rapidly through the positive power supply and the third switch, and the reliability of the power device is improved.
Drawings
The application will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings:
FIG. 1 shows a typical waveform schematic of three types of shorts;
FIG. 2 shows a schematic diagram of a gate driving circuit of a power device according to an embodiment of the present application;
FIG. 3 shows a schematic diagram of a gate drive circuit for a power device;
FIG. 4 shows a schematic diagram of a driving apparatus according to an embodiment of the present application;
FIG. 5 shows a schematic diagram of a logic processing circuit according to an embodiment of the present application.
In the drawings, like parts are given like reference numerals, and the drawings are not drawn to scale.
Detailed Description
In order to better understand the technical solutions of the present application and how to apply technical means to solve the technical problems of the present application, and to fully understand and implement the implementation process of achieving the corresponding technical effects, the following description will clearly and completely describe the technical solutions of the embodiments of the present application with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. The embodiment of the application and the characteristics in the embodiment can be mutually combined on the premise of no conflict, and the formed technical scheme is within the protection scope of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer executable instructions, and that although a logical order is illustrated in the flowcharts, in some cases the steps illustrated or described may be performed in an order other than that illustrated herein.
Three types of shorts (sciii) are defined as: the IGBT is turned on before a short circuit occurs and the short circuit loop impedance is very low, typically not exceeding 200nH. Fig. 1 shows typical waveforms of three types of short circuits, as shown in fig. 1, a short-dashed waveform is an IGBT device gate voltage Vge, a solid-line waveform is an IGBT device terminal voltage Vce, and a long-dashed waveform is an IGBT device current Ic, and as can be seen from fig. 1, the device current Ic rapidly increases after the three types of short circuits occur, and the maximum value reaches 18kA. In the special short-circuit working condition that the device is short-circuited after being opened, the device starts to be desaturated until 12kA, in the short-circuit peak current falling process, the induced voltage on the busbar stray inductance is superposed with the busbar direct current voltage to cause the IGBT device terminal voltage Vce to generate a peak, the device current Ic is reduced to be near 0A, namely the device is already turned off, at the moment, the device gate voltage Vge is larger than the gate opening threshold voltage of the IGBT device, namely the device self turn-off phenomenon occurs, and literature research shows that the device is easy to fail after the working condition occurs, and the existing driver has no targeted protection measure for the special working condition.
Example 1
The present embodiment provides a gate driving circuit of a power device, the gate driving circuit including: a first switch, a second switch and a third switch;
one end of the first switch is connected with the positive power supply, and the other end of the first switch is connected with one end of the second switch;
the other end of the second switch is connected with a negative power supply;
the gate electrode of the power device is connected to a connecting line between the first switch and the second switch;
one end of the third switch is connected to the positive power supply, and the other end of the third switch is connected to the gate electrode of the power device.
In some embodiments, the gate drive circuit further comprises:
and one end of the driving resistor is connected to a connecting line between the first switch and the second switch, the other end of the driving resistor is connected to the gate electrode of the power device, and the other end of the third switch is connected to a connecting line between the driving resistor and the gate electrode of the power device.
In some embodiments, the first switch is an NPN transistor, the second switch is a PNP transistor, and the third switch is a PMOS transistor.
In some embodiments, the power device is an insulated gate bipolar transistor.
Fig. 2 is a schematic diagram of a gate driving circuit of a power device according to an embodiment of the application. As shown in fig. 2, the gate driving circuit according to the present embodiment includes a push-pull circuit composed of a first switch S1 and a second switch S2, and a clamp circuit composed of a third switch S3.
When the power device IGBT is required to be turned on, the first switch S1 is closed (the second switch S2 is opened at the same time), and the third switch S3 is closed after a preset time (depending on the turn-on time of the power device IGBT) is delayed; when it is required to turn off the power device IGBT, the second switch S2 is turned on (the first switch S1 and the third switch S3 are simultaneously turned off).
Therefore, when three types of short circuits (SC III) occur in the power device IGBT in the on state, a passage formed by the first switch S1 and the driving resistor R and a passage formed by the third switch S3 only exist between the positive power supply VCC and the gate electrode of the power device IGBT, so that the gate electrode of the power device IGBT can be directly clamped on the positive power supply VCC through the third switch S3, the gate electrode charge pumped by the Miller effect can be rapidly supplemented, the gate electrode voltage Vge is stabilized, and the self-turn-off phenomenon of the device is prevented. That is, even if three types of short circuits occur, the gate driving circuit provided in the present embodiment can rapidly charge the gate through the positive power supply and the third switch, improving the reliability of the power device.
In order to further explain the beneficial effects of the gate driving circuit including the third switch of the present embodiment, a comparison will be made with reference to fig. 3. Fig. 3 is a schematic diagram of a gate driving circuit of a power device. In fig. 3, compared with the gate driving circuit of the present application shown in fig. 2, the third switch S3 in fig. 2 is located at a position corresponding to the diode D in fig. 3.
As shown in fig. 3, VCC is the positive power supply (+15v) of the gate driving circuit; VEE is the negative supply (-15V) of the gate drive circuit; r is a driving resistor and is used for ensuring that the switching process of the IGBT device does not exceed the safe working area of the device; d is a gate clamp diode.
The drawback of the gate driving circuit shown in fig. 3 is that when the above three types of short circuits occur in the state where the IGBT device is on (when the first switch S1 is closed and the second switch S2 is opened), a part of the gate charge is drawn by the miller effect during the falling of the terminal voltage Vce of the IGBT device, and the charging of the gate by the first switch S1 is slower due to the influence of the driving resistor R, so that the IGBT device is self-turned off.
As can be seen, the driving circuit shown in fig. 3 cannot alleviate the self-turn-off phenomenon of the IGBT devices in the three types of short circuits (SC iii), which is not beneficial to improving the reliability of the converter formed by the IGBT devices.
As can be seen from comparing fig. 2 and fig. 3, in the gate driving circuit shown in fig. 2 of the present embodiment, a third switch S3 is provided in addition to the first switch S1 and the second switch S2 in fig. 3 to directly connect to the driving positive power VCC. The gate driving circuit provided in this embodiment includes a push-pull circuit composed of a first switch S1 and a second switch S2, and a clamp circuit composed of a third switch S3 (for example, P-MOSFET), so that when three types of short circuits (sciii) occur, the gate of the IGBT device is directly clamped on the positive power VCC through the third switch S3, and the gate charge pumped by the miller effect can be rapidly supplemented to stabilize the gate voltage Vge, thereby preventing the device from self-turn-off phenomenon.
Example two
On the basis of the above embodiments, the present embodiment provides a driving device including:
the gate driving circuit of the above embodiment;
the logic processing circuit is connected with the gate driving circuit and is used for generating a control signal of the gate driving circuit;
the control signals of the gate driving circuit comprise a control signal of a first switch, a control signal of a second switch and a control signal of a third switch of the gate driving circuit.
In some embodiments, the driving device further comprises a short-circuit protection circuit, and the short-circuit protection circuit is respectively connected with the power device and the logic processing circuit and is used for monitoring the terminal voltage of the power device to realize short-circuit protection.
In some embodiments, the driving device further comprises a signal isolation circuit connected to the logic processing circuit for isolating the external signal from the logic circuit.
In some embodiments, the driving device further comprises a power isolation circuit, and the power isolation circuit is respectively connected with the gate driving circuit, the logic processing circuit, the short-circuit protection circuit and the signal isolation circuit and is used for electrically isolating an external power supply from the gate driving circuit, the logic processing circuit, the short-circuit protection circuit and the signal isolation circuit.
Fig. 4 shows that an embodiment of the present application provides a driving apparatus. As shown in fig. 4, the driving device includes a power isolation circuit, a signal isolation circuit, a logic processing circuit, and a short-circuit protection circuit in addition to a gate driving circuit.
As shown in fig. 4, the power isolation circuit electrically isolates an externally supplied driving power supply (typically 15V), and the output isolated positive and negative power supplies (VCC, VEE) are supplied to a signal isolation circuit, a logic processing circuit, a short-circuit protection circuit, etc.; the signal isolation circuit is used for electrically isolating an external driving signal and outputting a protection signal of the logic processing circuit to the external circuit after isolating the protection signal; the short-circuit protection circuit monitors the Vce terminal voltage of a power device (such as an IGBT) in real time to realize short-circuit protection; the logic processing circuit calculates driving signals of the first switch S1, the second switch S2 and the third switch S3 according to the external driving signals and the short-circuit protection signals, and sends the driving signals to the first switch S1, the second switch S2 and the third switch S3 to realize the switching action of the power device.
Example III
On the basis of the above embodiment, the logic processing circuit provided in this embodiment includes: an in-phase device 51, a resistor 52, a capacitor 53, a diode 54 and an inverter 55;
the input end of the inphase device 51 receives the control signal of the first switch, and the output end of the inphase device 51 is connected with the control end of the second switch and used for controlling the on-off of the second switch;
one end of the resistor 52 is connected to the output end of the phase inverter 51, and the other end of the resistor 52 is connected to the input end of the phase inverter 55;
one end of the capacitor 53 is grounded, and the other end of the capacitor 53 is connected to the input end of the inverter 55;
the output end of the inverter 55 is connected to the control end of the third switch S3, and is used for controlling the on-off of the third switch S3.
In some implementations, the logic processing circuit further includes: a diode 54 is connected across resistor 52 in parallel to increase the turn-off speed when the power device is turned off.
Fig. 5 illustrates that an embodiment of the present application provides a logic processing circuit. As shown in fig. 5, when the power device (e.g., IGBT) needs to be turned on, the control signal Dri of the first switch is at a high level, the control signal dri_s1s2 of the second switch is at a high level, the first switch S1 (NPN transistor) is turned on, the second switch S2 (PNP transistor) is turned off, the control signal dri_s3 of the third switch is at a low level after a certain time delay, and the third switch S3 (PMOS) is turned on.
When the power device needs to be turned off, the control signal Dri of the first switch is at a low level, the control signal dri_s1s2 of the second switch is at a low level, the first switch S1 (NPN triode) is turned off, the second switch S2 (PNP triode) is turned on, meanwhile, due to the effect of the diode dri_s3 is immediately switched to a high level without delay, and the third switch S3 (PMOS) is turned off.
Example IV
On the basis of the foregoing embodiments, the present embodiment provides a control method of a gate driving circuit, which is implemented based on the gate driving circuit of the power device of the foregoing embodiments, and includes:
closing the first switch and opening the second switch to turn on the power device;
after a preset time delay, the third switch is closed to clamp the voltage of the gate electrode of the power device to the voltage of the positive power supply.
When three types of short circuits (SC III) occur in the power device IGBT in the on state, a passage formed by the first switch and the driving resistor and a passage formed by the third switch exist between the positive power supply VCC and the gate electrode of the power device IGBT, so that the gate electrode of the power device IGBT can be directly clamped on the positive power supply VCC through the third switch S3, gate electrode charges pumped by the Miller effect can be rapidly supplemented, the gate electrode voltage Vge is stabilized, and the self-turn-off phenomenon of the device is prevented. That is, even if three types of short circuits occur, the gate driving circuit provided in the present embodiment can rapidly charge the gate through the positive power supply and the third switch, improving the reliability of the power device.
Example five
On the basis of the foregoing embodiments, the present embodiment provides a control method of a driving device, which is implemented based on the driving device of the foregoing embodiments, and the method includes:
setting the control signal of the first switch high;
the in-phase device responds to the control signal of the first switch which is set high to set the control signal of the second switch high so as to turn on the power device;
the resistor and the capacitor respond to the control signal of the second switch which is set high, and after delaying for a preset time length, the input end of the inverter is set high so as to set the output end of the inverter to be low;
the third switch is closed in response to the output of the inverter being set low to clamp the voltage of the gate of the power device to the voltage of the positive power supply.
When three types of short circuits (SC III) occur in the power device IGBT in the on state, a passage formed by the first switch and the driving resistor and a passage formed by the third switch exist between the positive power supply VCC and the gate electrode of the power device IGBT, so that the gate electrode of the power device IGBT can be directly clamped on the positive power supply VCC through the third switch S3, gate electrode charges pumped by the Miller effect can be rapidly supplemented, the gate electrode voltage Vge is stabilized, and the self-turn-off phenomenon of the device is prevented. That is, even if three types of short circuits occur, the gate driving circuit provided in the present embodiment can rapidly charge the gate through the positive power supply and the third switch, improving the reliability of the power device.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. The apparatus embodiments described above are merely illustrative, for example, of the flowcharts and block diagrams in the figures that illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
It should be noted that, in the present application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the inclusion of an element by the phrase "comprising one … …" does not exclude the presence of other elements in a process, method, article, or apparatus that comprises an element.
Although the embodiments of the present application are described above, the above description is only for the convenience of understanding the present application, and is not intended to limit the present application. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the appended claims.
Claims (12)
1. A gate drive circuit for a power device, the gate drive circuit comprising: a first switch, a second switch and a third switch;
one end of the first switch is connected with a positive power supply, and the other end of the first switch is connected with one end of the second switch;
the other end of the second switch is connected with a negative power supply;
the gate electrode of the power device is connected to a connecting line between the first switch and the second switch;
one end of the third switch is connected to the positive power supply, and the other end of the third switch is connected to the gate electrode of the power device.
2. The gate drive circuit of a power device of claim 1, further comprising:
and one end of the driving resistor is connected to a connecting line between the first switch and the second switch, the other end of the driving resistor is connected to the gate electrode of the power device, and the other end of the third switch is connected to a connecting line between the driving resistor and the gate electrode of the power device.
3. The gate driving circuit of claim 1, wherein the first switch is an NPN transistor, the second switch is a PNP transistor, and the third switch is a PMOS transistor.
4. The gate drive circuit of a power device of claim 1, wherein the power device is an insulated gate bipolar transistor.
5. A driving device, characterized by comprising:
the gate drive circuit of any one of claims 1-4;
the logic processing circuit is connected with the gate electrode driving circuit and is used for generating a control signal of the gate electrode driving circuit;
the control signals of the gate driving circuit comprise a control signal of a first switch, a control signal of a second switch and a control signal of a third switch of the gate driving circuit.
6. The drive of claim 5, wherein the logic processing circuit comprises: the device comprises an in-phase device, a resistor, a capacitor, a diode and an inverter;
the input end of the in-phase device receives a control signal of the first switch, and the output end of the in-phase device is connected with the control end of the second switch and used for controlling the on-off of the second switch;
one end of the resistor is connected with the output end of the phase inverter, and the other end of the resistor is connected with the input end of the phase inverter;
one end of the capacitor is grounded, and the other end of the capacitor is connected with the input end of the reverser;
the output end of the inverter is connected to the control end of the third switch and used for controlling the on-off of the third switch.
7. The drive of claim 6, wherein the logic processing circuit further comprises: and the diode is connected in parallel with two ends of the resistor and used for accelerating the turn-off speed when the power device is turned off.
8. The driving device according to claim 5, further comprising a short-circuit protection circuit connected to the power device and the logic processing circuit, respectively, for monitoring a terminal voltage of the power device to achieve short-circuit protection.
9. The drive of claim 5, further comprising a signal isolation circuit coupled to the logic processing circuit for isolating an external signal from the logic circuit.
10. The driving device according to any one of claims 5 to 9, further comprising a power isolation circuit connected to the gate driving circuit, the logic processing circuit, the short-circuit protection circuit, and the signal isolation circuit, respectively, for electrically isolating an external power source from the gate driving circuit, the logic processing circuit, the short-circuit protection circuit, and the signal isolation circuit.
11. A control method of a gate driving circuit, characterized in that it is implemented based on the gate driving circuit of the power device according to any one of claims 1 to 4, the method comprising:
closing the first switch and opening the second switch to turn on the power device;
after a preset time delay, the third switch is closed to clamp the voltage of the gate electrode of the power device to the voltage of the positive power supply.
12. A control method of a driving device, characterized in that it is realized based on the driving device according to any one of claims 5 to 10, the method comprising:
setting a control signal of the first switch high;
the in-phase device responds to the control signal of the first switch which is set high to set the control signal of the second switch high so as to turn on the power device;
the resistor and the capacitor respond to the control signal of the second switch which is set high, and after delaying for a preset time length, the input end of the inverter is set high so as to set the output end of the inverter to be low;
the third switch is closed in response to the output of the inverter being set low to clamp the voltage of the gate of the power device to the voltage of the positive power supply.
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| CN202210351616.8A CN116937944A (en) | 2022-04-02 | 2022-04-02 | Gate driving circuit, driving device and control method of power device |
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| CN202210351616.8A CN116937944A (en) | 2022-04-02 | 2022-04-02 | Gate driving circuit, driving device and control method of power device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025019983A1 (en) * | 2023-07-21 | 2025-01-30 | 英诺赛科(苏州)半导体有限公司 | Switching device driving circuit, driving method, driving chip, and driving device |
-
2022
- 2022-04-02 CN CN202210351616.8A patent/CN116937944A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025019983A1 (en) * | 2023-07-21 | 2025-01-30 | 英诺赛科(苏州)半导体有限公司 | Switching device driving circuit, driving method, driving chip, and driving device |
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