CN116936670A - High-speed germanium-silicon photoelectric detector - Google Patents

High-speed germanium-silicon photoelectric detector Download PDF

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Publication number
CN116936670A
CN116936670A CN202311116318.1A CN202311116318A CN116936670A CN 116936670 A CN116936670 A CN 116936670A CN 202311116318 A CN202311116318 A CN 202311116318A CN 116936670 A CN116936670 A CN 116936670A
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germanium
doped
layer
contact electrode
absorption region
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余宇
石洋
邹明洁
李祖航
张新亮
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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Abstract

The invention discloses a high-speed germanium-silicon photoelectric detector. The high-speed germanium-silicon photoelectric detector comprises: the device comprises a doped silicon layer, a germanium absorption region, a doped germanium layer, a contact electrode and a germanium upper electrode; the doping polarity of the doped silicon layer is opposite to that of the doped germanium layer, and the doped silicon layer, the germanium absorption region and the doped germanium layer are sequentially connected into a vertical PIN junction; the contact electrodes are arranged on the doped silicon layer, the contact electrodes surround three sides of the germanium absorption region, and the germanium upper electrode is arranged on the doped germanium layer; the contact electrode and the germanium upper electrode collect photo-generated carriers generated by light absorption of the germanium absorption region to form photocurrent; the distance between each side of the contact electrode and the corresponding side in the germanium absorbing region is inversely proportional to the side length of the germanium absorbing region. The technical problem that parasitic capacitance and parasitic resistance are mutually restricted when the RC parasitic effect is reduced by reducing the resistance and is used for improving the bandwidth of the detector is solved.

Description

High-speed germanium-silicon photoelectric detector
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a high-speed germanium-silicon photoelectric detector.
Background
The silicon-based photon technology is compatible with the CMOS process, has the advantages of mature process and high integration level, and can meet the requirements of integration and low cost of optoelectronic devices. In silicon-based photon technology, a silicon-based germanium photodetector is a core device for realizing photoelectric conversion. With the rapid increase in global communication capacity, the bandwidth of the probe has increased. However, the bandwidth of the detector is limited by RC parasitics, i.e., parasitic capacitance and parasitic resistance, and it is difficult to support high-speed photodetection. The parasitic capacitance of the detector is proportional to the area of germanium. The parasitic resistance of the detector comprises two parts, namely a contact resistance of metal and silicon and a resistance of a doped silicon layer, wherein the resistance of the doped silicon layer is a main component of the overall parasitic resistance. The main flow detector adopts a doped silicon upper electrode parallel to the germanium absorption region, at the moment, the resistance of the doped silicon layer is inversely proportional to the area of germanium, and the parasitic capacitance and the resistance are a pair of contradictory quantities, and the product of the parasitic capacitance and the resistance changes less along with the size of the germanium absorption region.
Non-patent document 1 (Optics express,2011,19 (25): 24897-24904) reports a typical implementation of high-speed silicon germanium photodetectors, i.e., the implementation of vertical PIN diodes with epitaxially grown germanium absorption regions on SOI substrates. Fig. 1 is a schematic structural diagram of a photodetector in non-patent document 1, which includes a P-type doped silicon layer 101, an intrinsic germanium absorption region 102, an N-type doped germanium layer 103, a parallel contact electrode 104 on silicon, and a germanium upper electrode 105. Wherein 101, 102 and 103 form vertical PIN junctions. 104 and 105 are electrodes for collecting photocurrent. Non-patent document 1 reduces parasitic capacitance by reducing the length of the germanium absorption region, thereby improving bandwidth. But the main drawback is that the parasitic resistance increases by reducing the germanium length, so the bandwidth increase is very limited. Non-patent document 1 also demonstrates that increasing the length of the germanium absorption region can reduce the resistance of the doped silicon layer, but the parasitic capacitance increases faster, failing to reduce the RC parasitic effect.
In order to solve the drawbacks of the above-described solution, non-patent document 2 (Chinese Optics Letters,2017,15 (10): 100401) proposes a solution to keep the volume of the germanium absorption region unchanged, thereby reducing the parasitic resistance. This document discloses a method of reducing the contact resistance of metal and silicon by increasing the parallel electrode area, but this method does not work on the resistance of the doped silicon layer and therefore has a weak regulation effect on parasitic resistance.
In order to solve the problem of parasitic resistance of the doped silicon layer, patent document 3 (CN 110957354 a) reports a method of reducing the resistivity by using a heavily doped silicon layer, thereby reducing the resistance of the doped silicon layer. Although this method can reduce parasitic resistance, the resistivity cannot be reduced without limitation, so a new mechanism for reducing parasitic resistance is still needed.
In the scheme of the prior art, the technical problem that parasitic capacitance and parasitic resistance are mutually restricted when RC parasitic effect is reduced by reducing resistance and is used for improving the bandwidth of the detector exists.
Disclosure of Invention
Aiming at the defects of the related art, the invention aims to provide a high-speed germanium-silicon photoelectric detector, which aims to solve the technical problem that parasitic capacitance and parasitic resistance are mutually restricted when the bandwidth of the detector is improved.
To achieve the above object, the present invention provides a high-speed silicon germanium photodetector, comprising: the device comprises a doped silicon layer, a germanium absorption region, a doped germanium layer, a contact electrode and a germanium upper electrode;
the doping polarity of the doped silicon layer is opposite to that of the doped germanium layer, and the doped silicon layer, the germanium absorption region and the doped germanium layer are sequentially connected into a vertical PIN junction;
the contact electrode is arranged on the doped silicon layer, the contact electrode surrounds three sides of the germanium absorption region, and the germanium upper electrode is arranged on the doped germanium layer; the contact electrode and the germanium upper electrode collect photo-generated carriers generated by light absorption of the germanium absorption region to form photocurrent;
the distance between each side of the contact electrode and the corresponding side in the germanium absorption region is inversely proportional to the side length of the germanium absorption region.
Optionally, the other side surface of the germanium absorption region, which is not surrounded by the contact electrode, is a channel for light to enter the germanium absorption region.
Optionally, the contact electrode is a U-shaped metal contact electrode.
Optionally, the contact electrode is an unsealed square-frame electrode.
Optionally, the doped silicon layer is heavily doped with P type, and the order of magnitude is 10 20 cm -3 。
Optionally, the doped germanium layer is heavily doped with N type, and has an order of magnitude of 10 20 cm -3 。
Optionally, the doped silicon layer acts as an optical waveguide to guide incident light into the germanium absorbing region.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the invention provides a high-speed germanium-silicon photoelectric detector, which utilizes a strategy of regulating and controlling a photocurrent collecting path to reduce parasitic resistance so as to improve the bandwidth of the detector, and forms contact electrodes around three sides of a germanium absorption region by adding a metal contact structure, so that the parasitic resistance of a doped silicon layer can be obviously reduced while the photocurrent collecting path is increased, parasitic capacitance can not be additionally increased, the bandwidth of the detector can be effectively improved, and the speed of light detection is enhanced.
2. The invention provides a high-speed germanium-silicon photoelectric detector, the design of the original germanium absorption region is compatible with the added metal contact structure, the bandwidth of the detector is improved, the responsivity of the detector, dark current and other performances of the detector are not influenced, the high-speed germanium-silicon photoelectric detector is compatible with a CMOS (complementary metal oxide semiconductor) process, and the process complexity and the production cost can be reduced.
Drawings
FIG. 1 is a schematic diagram of a prior art photodetector;
FIG. 2 is a schematic diagram of a high-speed SiGe photodetector according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of parasitic resistance of a high-speed SiGe photodetector according to an embodiment of the present invention;
FIG. 4 is a graph of parasitic resistance as a function of germanium length for a U-shaped metal contact electrode and a conventional parallel electrode;
FIG. 5 is a graph of the frequency response of a silicon-based germanium detector based on U-shaped metal contact electrodes and conventional parallel electrodes;
fig. 6 is a schematic diagram of another high-speed sige photodetector according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The description of the contents of the above embodiment will be given below in connection with a preferred embodiment.
Fig. 1 is a schematic structural diagram of a prior art photodetector, and as shown in fig. 1, the photodetector 100 includes a P-type doped silicon layer 101, an intrinsic germanium absorption region 102, an N-type doped germanium layer 103, a parallel contact electrode 104 on silicon, and an upper electrode 105 on the doped germanium layer. The P-doped silicon layer 101, the intrinsic germanium absorption region 102 and the N-doped germanium layer 103 form a vertical PIN junction, and the parallel contact electrode 104 and the upper germanium electrode 105 on the silicon are electrodes for collecting photocurrent. The parasitic capacitance can be reduced by reducing the length of the germanium absorption region in the prior art, so that the bandwidth is improved, but the parasitic resistance is increased by reducing the length of the germanium, so that the improvement of the bandwidth is very limited. The scheme also proves that the resistance of the doped silicon layer can be reduced by increasing the length of the germanium absorption region, but the parasitic capacitance is increased, so that RC parasitic effect cannot be effectively reduced.
As shown in fig. 2, a high-speed silicon germanium photodetector 200 includes: a doped silicon layer 201, a germanium absorbing region 202, a doped germanium layer 203, a contact electrode 204 and a germanium upper electrode 205;
the doping polarity of the doped silicon layer 201 is opposite to that of the doped germanium layer 202, and the doped silicon layer 201, the germanium absorption region 202 and the doped germanium layer 203 are sequentially connected to form a vertical PIN junction;
the contact electrode 204 is disposed on the doped silicon layer 201, the contact electrode 204 surrounds the three sides of the germanium absorption region 202, and the germanium upper electrode 205 is disposed on the doped germanium layer 203; the contact electrode 204 and the germanium upper electrode 205 collect photo-generated carriers generated by the light absorbed by the germanium absorption region 202, so as to form a photocurrent;
the distance between each side of the contact electrode and the corresponding side in the germanium absorption region is inversely proportional to the side length of the germanium absorption region.
Optionally, the other side of the germanium absorbing region 202 not surrounded by the contact electrode 204 is a channel for light to enter the germanium absorbing region 202.
In this embodiment, the contact electrode 204 is a U-shaped metal contact electrode.
In this embodiment, the germanium upper electrode 205 on the doped germanium layer 203 and the U-shaped metal contact electrode 204 on the doped silicon layer 201 together form an electrode for collecting photocurrent, and the other parts of the detector form a PIN diode by the doped silicon layer 201, the germanium absorption region 202 and the doped germanium layer 203. Wherein the doped silicon layer 201 acts as an optical waveguide, guiding incident light into the germanium absorption region 202; germanium absorption region 202 absorbs incident light, thereby generating photogenerated carriers; the germanium upper electrode 205 and the U-shaped metal contact electrode 204 form ohmic contacts with the doped germanium layer 203 and the doped silicon layer 201, respectively, and collect photo-generated carriers to form photocurrent. The doping polarity of the doped silicon layer 201 is opposite to that of the doped germanium layer 202, and in this embodiment, the doped silicon layer 201 is heavily doped P-type and the doped germanium layer 202 is heavily doped N-type. By means of the U-shaped metal contact, an additional photocurrent collecting path is established compared to the parallel contact electrode in the prior art solution, which does not change the germanium absorbing region structure, which is equivalent to adding a new parallel resistance without increasing the PIN junction parasitic capacitance, thus reducing the total resistance of the doped silicon layer 201 region. As shown in fig. 3, the conventional parallel electrode has two current collecting paths, namely, a resistor 1 and a resistor 2, which are equivalent to two parallel resistors with equal size. More precisely, the resistances of the rectangular doped silicon layer between the germanium absorption region side length and the electrode are resistance 1 and resistance 2. The additional side of the U-shaped metal contact electrode in this embodiment corresponds to the introduction of a new parallel resistor 3. Reducing the total parasitic resistance of the doped silicon layer 201 while increasing the photocurrent collection path equivalently reduces the RC time constant of the detector without increasing parasitic capacitance, thereby allowing for an increase in the bandwidth of the detector. The resistance of a rectangular doped silicon layer is proportional to the electrode/germanium distance and inversely proportional to the germanium side length. When the distances between the sides of the U-shaped contact electrode and the sides of the germanium absorption region are not equal but inversely proportional to the side lengths of the germanium absorption region, the resistances 1-3 are found to be equal through simple mathematical reasoning, and the theoretical total resistance becomes 1/3 of the original resistance. Note that this method does not require changing the area of germanium and thus the parasitic capacitance does not increase.
According to the high-speed germanium-silicon photoelectric detector provided by the embodiment, the parasitic resistance of the U-shaped metal contact electrode obtained through simulation and the parasitic resistance of the traditional parallel metal contact electrode are changed along with the length of the germanium absorption region, and the parasitic resistance is shown in fig. 4. Under both structures, the parasitic resistance decreases with increasing germanium length, but the parasitic resistance of the U-shaped metal contact electrode decreases by 30-50% compared to the parasitic resistance of the parallel contact electrode. Assuming that the germanium length in the area of the germanium absorption region is not 8 micrometers, the parasitic resistance corresponding to the parallel contact electrode and the U-shaped metal contact electrode is reduced from 48 to 28Ω, and the reduction ratio is 40.6%. If conventional parallel contact electrodes are used, the detector would have to increase the germanium length from 8 to 14 microns to achieve the same parasitic resistance reduction effect, resulting in a 75% increase in parasitic capacitance.
According to the two structures, two detectors are actually manufactured, and the two detectors are respectively provided with the two different contact electrodes. The frequency response of both detectors is measured as shown in fig. 5. Under the bias voltage of-1V, the bandwidth of the detector with the U-shaped metal contact electrode is increased from 83GHz to 103GHz compared with that of the detector with the parallel contact electrode, so that the effect of increasing the collection path of photocurrent, reducing parasitic resistance and further improving bandwidth can be realized through simple structural change, and the germanium-silicon photoelectric detector with the ultra-high speed of 103GHz bandwidth is realized. Moreover, the design of the original germanium absorption region is compatible, so that the responsivity and dark current of the detector are not influenced, and the structure is simple and the CMOS technology is compatible.
According to the embodiment of the invention, a strategy of regulating and controlling the photocurrent collecting path to reduce parasitic resistance and further improve the bandwidth of the detector is utilized, a metal contact structure is added, surrounding contact electrodes surrounding three sides of the germanium absorption region are formed, the parasitic resistance of the doped silicon layer can be obviously reduced while the photocurrent collecting path is increased, the technical problem that the parasitic resistance and the parasitic capacitance are mutually restricted when the resistance is reduced and then RC parasitic effect is reduced to improve the bandwidth of the detector is solved, the bandwidth of the detector is effectively improved, and the speed of light detection is enhanced.
Optionally, based on the above embodiment, the surrounding contact electrode is an unsealed square electrode, and light enters the channel of the germanium absorption region from the notch.
As shown in fig. 6, another embodiment of the present invention employs a frame-type electrode 401 surrounding the contact electrode. In this embodiment, although the electrode shape of the square electrode 401 is not completely identical to that of the U-shaped metal contact electrode in the above embodiment, the parasitic resistance is reduced by increasing the photocurrent collecting path and the parallel resistor introduced, the principle is the same as that of the above embodiment, the parasitic resistance is reduced by parallel connection of 4 resistors, and 402 is the region corresponding to the germanium absorption region.
Further, in the case of meeting the size requirement, the surrounding contact electrode may be any other electrode, for example, a circular arc electrode, which can achieve the beneficial effects of the present invention.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.

Claims (7)

1. A high-speed silicon-germanium photodetector, comprising: the device comprises a doped silicon layer, a germanium absorption region, a doped germanium layer, a contact electrode and a germanium upper electrode;
the doping polarity of the doped silicon layer is opposite to that of the doped germanium layer, and the doped silicon layer, the germanium absorption region and the doped germanium layer are sequentially connected into a vertical PIN junction;
the contact electrode is arranged on the doped silicon layer, the contact electrode surrounds three sides of the germanium absorption region, and the germanium upper electrode is arranged on the doped germanium layer; the contact electrode and the germanium upper electrode collect photo-generated carriers generated by light absorption of the germanium absorption region to form photocurrent;
the distance between each side of the contact electrode and the corresponding side in the germanium absorption region is inversely proportional to the side length of the germanium absorption region.
2. The high speed silicon germanium photodetector of claim 1, wherein the other side of said germanium absorbing region not surrounded by said contact electrode is a channel for light to enter said germanium absorbing region.
3. The high speed silicon germanium photodetector of claim 2 wherein said contact electrode is a U-shaped metal contact electrode.
4. The high speed silicon germanium photodetector of claim 2 wherein said contact electrode is an unsealed square-frame electrode.
5. The high-speed silicon germanium photodetector of claim 1, wherein said doped silicon layer is heavily doped P-type, on the order of 10 20 cm -3 。
6. The high-speed silicon germanium photodetector of claim 1, wherein said doped germanium layer is heavily doped N-type, on the order of 10 20 cm -3 。
7. The high speed silicon germanium photodetector of claim 1, wherein said doped silicon layer acts as an optical waveguide to direct incident light into said germanium absorbing region.
CN202311116318.1A 2023-08-31 2023-08-31 High-speed germanium-silicon photoelectric detector Pending CN116936670A (en)

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CN202311116318.1A CN116936670A (en) 2023-08-31 2023-08-31 High-speed germanium-silicon photoelectric detector

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