CN116936663A - Photovoltaic double-sided assembly packaging film, manufacturing method and manufacturing equipment thereof - Google Patents
Photovoltaic double-sided assembly packaging film, manufacturing method and manufacturing equipment thereof Download PDFInfo
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- CN116936663A CN116936663A CN202311196165.6A CN202311196165A CN116936663A CN 116936663 A CN116936663 A CN 116936663A CN 202311196165 A CN202311196165 A CN 202311196165A CN 116936663 A CN116936663 A CN 116936663A
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- layer
- eva
- buffer layer
- glass
- buffer
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- 229920006280 packaging film Polymers 0.000 title claims abstract description 48
- 239000012785 packaging film Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 397
- 239000011521 glass Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 35
- 239000002052 molecular layer Substances 0.000 claims description 34
- 239000012044 organic layer Substances 0.000 claims description 30
- 238000000231 atomic layer deposition Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 238000003475 lamination Methods 0.000 claims description 15
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- 239000011147 inorganic material Substances 0.000 claims description 14
- 239000011368 organic material Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 20
- 238000002360 preparation method Methods 0.000 abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 10
- 150000002500 ions Chemical class 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 239000002313 adhesive film Substances 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
- B32B2255/205—Metallic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/24—Organic non-macromolecular coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/28—Multiple coating on one surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/416—Reflective
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/56—Damping, energy absorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/724—Permeability to gases, adsorption
- B32B2307/7242—Non-permeable
- B32B2307/7246—Water vapor barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/10—Batteries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
Abstract
The application relates to the technical field of solar cells, in particular to a photovoltaic double-sided module packaging film, a preparation method and manufacturing equipment thereof, wherein a buffer layer, an infrared reflecting layer and other structures are added into the packaging film, and a plurality of buffer layers are formed to optimize the blocking effect of the packaging film, and a structural layer for blocking ions and water vapor is added into the packaging film, so that the PID (potential induced degradation) resistance effect of the packaging film module is improved; the application also provides a preparation method and a preparation device of the packaging film, which can realize the preparation of the packaging film, and provides a convenient mode.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a photovoltaic double-sided assembly packaging film, a manufacturing method and manufacturing equipment thereof.
Background
The photovoltaic module comprises a solar cell and a packaging structure, wherein the photovoltaic module is like a sandwich, a cell is arranged in the middle of the photovoltaic module, and an upper layer and a lower layer are packaged by glass or a backboard. The photovoltaic adhesive film is clamped between the glass, the battery piece and the backboard, plays a role in bonding and packaging, and has the main role of protecting the battery piece, so that the photovoltaic module is not influenced by external environment in the operation process, and the service life of the photovoltaic module is prolonged.
In the prior art, EVA adhesive films and POE adhesive films are mainly adopted, and EVA materials have good light transmittance and good adhesion with glass and a backboard. The photovoltaic adhesive film made of POE material has better performance than EVA, and has the main advantage of strong PID resistance. Compared with EVA, the POE adhesive film has strong PID resistance, and the reasons include: the water vapor permeability is low, and the water vapor permeability expresses the water blocking performance of the film, and the lower the water vapor permeability is, the better the water blocking performance is. EVA material is by ethylene and vinyl acetate copolymerization, and vinyl acetate is polar material, and easily adsorbs aqueous vapor, and POE material can not, and POE water vapor transmissivity is the tenth of EVA material. The volume resistivity POE is better, the higher the volume resistivity is, the better the insulativity is required to be provided for the adhesive film in the assembly, the volume resistivity of the adhesive film made of EVA material can be rapidly reduced along with the rise of temperature, the attenuation of the POE adhesive film is reduced, and the volume resistivity of the POE adhesive film at high temperature is 1-2 orders of magnitude higher than that of the EVA adhesive film.
Although the performance of the POE adhesive film is better, the price of the POE adhesive film is more expensive than that of an EVA adhesive film, the supply and the demand of upstream POE raw materials are limited, and the production process of the POE adhesive film is more difficult than that of EVA adhesive film. Such as precipitation of auxiliary agents, bubbles, displacement and the like, and finally affects the production efficiency and the yield. Therefore, the EVA adhesive film needs to be improved in a related manner, the PID resistance of the EVA adhesive film is improved, and the defects of the EVA adhesive film, such as relative water vapor transmittance and resistivity, are overcome on the basis of retaining the advantages of the EVA adhesive film.
Disclosure of Invention
The application aims to provide a packaging film of a photovoltaic double-sided assembly, which can optimize the blocking effect of the packaging film, and a structural layer for blocking ions and water vapor is added in the step of packaging the film, so that the PID (potential induced degradation) resistance effect of the packaging film assembly is improved.
The application aims at realizing the following technical scheme: the application provides a photovoltaic double-sided assembly packaging film, which comprises an EVA substrate layer, wherein two sides of the EVA substrate layer respectively comprise a glass side EVA layer and a cell side EVA layer; the three EVA layers are arranged so that the main material of the final package is EVA material, the EVA material accounts for 75-95% of the thickness of the packaging film, and the three EVA layers can be manufactured firstly and then combined with other layers to combine the EVA materials together.
A first buffer layer and an infrared reflection layer are arranged between the EVA substrate layer and the glass side EVA layer; a second buffer layer is arranged between the EVA substrate layer and the EVA layer at the side of the battery piece, and the specific material of the infrared reflecting layer can be silver, copper or aluminum; the infrared reflecting layer can be formed in a physical vapor deposition mode, the part which is not converted into a visible light wave band can be reflected by the infrared reflecting layer formed on one side of the EVA substrate, which is close to the glass, and the part is reflected into the EVA layer on the glass side, and is further converted through the up-conversion luminescent nano particles, and is reflected to the battery piece again, or the light of the infrared wave band is directly reflected out of the battery assembly through each layer, so that the influence of the light of the infrared wave band is reduced by matching each layer, and the influence of the light of the infrared wave band is reduced through reflection or conversion.
The buffer layer is mainly formed by overlapping an organic layer and an inorganic layer, and mainly utilizes the barrier properties of different materials, and meanwhile, the organic layer can be used for protecting the inorganic layer. The first buffer layer can be formed by a vapor deposition method, for example, in order to ensure the effect of preparing a film layer, atomic layer deposition and molecular layer deposition are adopted, and the characteristics of atomic layer deposition and molecular layer deposition are utilized, so that the formed film is continuous in most cases, microcracks or gaps are not generated, and a complete barrier surface can be formed.
The thickness of the first buffer layer is the same as that of the second buffer layer, and the first buffer layer and the second buffer layer have structures symmetrical relative to the EVA substrate layer; in the setting method, two layers of buffer layers are formed, and because the EVA substrate layer can be transmitted in the equipment in a roll-to-roll mode, under the mode, the buffer layers can be formed at the two sides of the EVA substrate layer simultaneously through the structure of the equipment, the setting mode of the two layers of buffer layers can realize the manufacture of the two layers of buffer layers through a simpler mode, the blocking positions of the packaging film on water vapor, oxygen, ions and the like are increased, in addition, the two layers of buffer layers are respectively manufactured at the two sides of the EVA substrate layer, the mode of simply increasing the thickness of the buffer layers is not adopted, and the expansion of a failure path in a single buffer layer is avoided.
The first buffer layer and the second buffer layer comprise organic material layers and inorganic material layers which are repeatedly stacked, wherein the organic material layers are prepared by adopting a molecular layer deposition method, and the inorganic material layers are prepared by adopting an atomic layer deposition method;
the buffer layer is prepared by overlapping the organic material layer and the inorganic material layer, the inorganic layer and the organic layer can firstly separate water vapor and ions by utilizing different properties, different materials for blocking are added, atomic layer deposition and molecular layer deposition are adopted, and the characteristics of atomic layer deposition and molecular layer deposition are utilized, so that the formed film is continuous in most cases, microcracks or gaps can not occur, a complete blocking surface can be formed, in addition, the inorganic layer is clamped between the organic layers, stress changes caused by other parts can be relieved through the organic layers, for example, when an encapsulation film is used for lamination, internal transverse acting force caused by lamination is relieved, and the inorganic layer is prevented from being damaged by other links, so that the blocking performance of the inorganic layer is prevented from being influenced.
Both sides of the first buffer layer and the second buffer layer are organic layers formed by a molecular layer deposition method, and the surfaces of the organic layers are modified by plasma chemical treatment; the surface can be modified by plasma chemical treatment through plasma chemical treatment, and the adhesion of the surface of the organic layer can be increased by the plasma chemical treatment, so that the connection strength of the organic layer and other layers is enhanced, and the strength of the formed assembly structure is improved.
The glass side EVA layer comprises up-conversion luminescent nano particles, and the glass side EVA layer is mixed with up-conversion luminescent nano materials, wherein the up-conversion luminescent nano particles mainly have the effects of converting infrared band light into visible band light, further improving the utilization rate of the solar cell to the optical band, converting infrared band light into the visible band light, reducing heat accumulation of the solar cell assembly and reducing the temperature of the assembly as much as possible;
one side of the glass side EVA layer attached to the glass comprises a third buffer layer, and the outer side of the third buffer layer further comprises an EVA covering layer. The provision of the third buffer layer can further increase one barrier position such that 3 barrier positions are respectively provided in the thickness direction of the encapsulation film, and an organic-inorganic layer overlapping mode is adopted, unlike increasing the thickness of the barrier film alone, and since the organic-inorganic layer is used in the single buffer layer, the failure mode of the single buffer layer is also distinguished from that of a general single inorganic layer or a single organic layer, and has longer durability than that of the encapsulation film formed of a general single barrier material. In addition, the refractive index of each layer can be gradually increased, and the light limiting effect of the EVA layer is improved through the design of combining the refractive indexes of the layer thicknesses.
In one embodiment, the thickness of the third buffer layer is 50% of the thickness of the first buffer layer.
In one embodiment, the EVA cover layer has a thickness of 15% -30% of the glass side EVA layer thickness.
The thickness of the third buffer layer and the thickness of the EVA coating layer are relatively thinner than those of the inner buffer layer and the EVA related layer, so that the whole packaging film is not of a symmetrical structure in the thickness direction, the symmetry is reduced on the bonding of each layer and the influence of internal stress, and due to the fact that the materials of specific materials are different, the internal stress changes completely in the case of facing heat changes cannot be generated when the material layers with different thicknesses are different, and therefore the failure probability is reduced.
In one embodiment, the first buffer layer has a thickness of 50-200nm.
In one embodiment, the infrared reflecting layer has a thickness of less than 100nm.
The application further provides a manufacturing method of the photovoltaic double-sided assembly packaging film, which comprises the following steps:
step one, providing an EVA substrate layer;
step two, forming buffer layers alternately formed by an organic material layer and an inorganic material layer on two sides of the EVA substrate layer through a molecular layer deposition and atomic layer deposition method;
forming an infrared reflecting layer on one side of the EVA substrate, which is close to the glass;
step four, stacking the glass side EVA layers on two sides of the structure obtained in the step three, wherein the glass side EVA layers are stacked on one side close to glass, and the cell side EVA layers are stacked on one side close to a cell, and the glass side EVA layers are EVA material layers mixed with up-conversion luminescent nano particles;
the method comprises the steps of mixing up-conversion luminescent nano particles in a liquid EVA material, and curing the EVA layer to form a glass side EVA layer after the liquid EVA material and the EVA layer are uniformly mixed, wherein the up-conversion luminescent nano particles have the main functions of converting infrared band light into visible band light, improving the utilization rate of a solar cell on the optical band, converting infrared band light into the visible band light, reducing heat accumulation of a solar cell assembly and reducing the temperature of the assembly as much as possible.
The infrared reflecting layer formed on one side of the EVA substrate, which is close to the glass, can reflect the part which is not converted into the visible light wave band, and reflect the part into the EVA layer on the glass side, and further convert the part into the luminescent nano particles through up-conversion, and reflect the light of the infrared wave band to the battery piece again, or directly reflect the light of the infrared wave band out of the battery assembly through each layer, so that the influence of the light of the infrared wave band is reduced by matching each layer, and the infrared reflecting layer can be utilized.
And fifthly, forming a third buffer layer on one side, attached to the glass, of the glass side EVA layer, and after forming the third buffer layer, further forming an EVA covering layer on the surface of the third buffer layer.
In one embodiment, after the first buffer layer and the second buffer layer are formed, the first buffer layer and the second buffer layer are modified by plasma chemical treatment.
In one embodiment, in the step of forming the first buffer layer and the second buffer layer, the last layer is an organic layer formed by a molecular layer deposition method.
In one embodiment, after the first buffer layer and the second buffer layer are formed, the first buffer layer and the second buffer layer are modified by plasma chemical treatment.
In addition, the application also provides a manufacturing device of the photovoltaic double-sided assembly packaging film, which comprises a winding transmission mechanism:
the first forming chamber comprises a repeated molecular layer deposition module and an atomic layer deposition module, and is used for simultaneously forming a first buffer layer and a second buffer layer on two sides of the EVA substrate layer respectively;
the physical vapor deposition chamber is used for forming an infrared reflecting layer in a physical vapor deposition mode;
the first lamination chamber is used for laminating the EVA substrate layer with the first buffer layer and the second buffer layer formed on the surfaces, the glass layer EVA layer and the cell side EVA layer into a whole;
the second forming chamber comprises a repeated molecular layer deposition module, an atomic layer deposition module and a plasma processing module, wherein the repeated molecular layer deposition module, the atomic layer deposition module and the plasma processing module are used for forming a third buffer layer on one side, which is attached to glass, of the EVA layer on the glass side, and the plasma processing module is used for carrying out plasma processing on the surface.
In one embodiment, a second lamination chamber is also included for further forming an EVA cover layer on the surface of the third buffer layer after it is formed.
Each equipment is arranged linearly, EVA substrate layer glass side EVA layer the take-up in advance of battery piece side EVA layer, EVA substrate layer gets into first formation cavity through winding transmission mechanism earlier, in first formation cavity, form in EVA substrate layer's bilateral symmetry, directly form simultaneously in front and reverse side, can be through control reaction condition, form the buffer layer of the same thickness in EVA substrate layer bilateral symmetry respectively as first buffer layer and second buffer layer, form the buffer layer of bilateral symmetry, form the buffer layer simultaneously in both sides and can alleviate the problem that deposit in-process produced different thermal stress to EVA substrate layer both sides, in-process, avoid the influence to the material layer in the preparation process.
For the preparation of the buffer layer of the core, the application integrates a space atomic layer deposition and molecular layer deposition structure through flat plate type equipment, combines an EVA material layer to be transported and moved in a roll-to-roll mode, respectively integrates an atomic layer deposition module and a molecular layer deposition module, can realize the compatibility of two processes, is directly and linearly formed in a pipeline mode, and can realize the preparation of the positive and negative surface layers of the film in a roll-to-roll mode according to the relevant characteristics of the equipment.
Compared with the prior art, the application has the following beneficial effects: the application provides a packaging film of a photovoltaic double-sided assembly, which optimizes the blocking effect of the packaging film by forming a plurality of buffer layers, and adds a structural layer for blocking ions and water vapor in the step of packaging the film, thereby improving the PID resistance effect of the packaging film assembly; the application improves the EVA material, improves the barrier property of the EVA material while keeping the advantages of the EVA material, and simultaneously provides the preparation method and the preparation equipment of the packaging film, which can realize the preparation of the packaging film, and provides a convenient mode, and the preparation equipment provided can realize the preparation of the packaging film with the buffer layer.
Drawings
Fig. 1 is a schematic structural view of a photovoltaic double-sided module packaging film of the present application.
Fig. 2 is a flow chart of a method of making a photovoltaic double-sided module encapsulation film of the present application.
Fig. 3 is a schematic view of an apparatus for manufacturing a photovoltaic double-sided module encapsulation film of the present application.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms "comprising" and "having" and any variations thereof herein are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a photovoltaic double-sided module packaging film according to the present application, in which a film layer with a blocking effect is added to a component of a solar cell module, which is a packaging film, and the packaging film is matched with other parts of the solar cell module, so that the packaging effect of the solar cell module can be further enhanced.
The application provides a photovoltaic double-sided assembly packaging film, which comprises an EVA substrate layer 10, wherein two sides of the EVA substrate layer 10 respectively comprise a glass side EVA layer 14 and a cell side EVA layer 15; EVA is selected as materials of the EVA substrate layer 10, the glass side EVA layer 14 and the battery piece side EVA layer 15, the materials can be rolled in advance, the materials are respectively unrolled during preparation, the specific forming materials of the EVA layers can be conventional compositions in the field at present, various auxiliary agents and the like, and a plurality of layers are laminated and heat treated to finally form the photovoltaic double-sided assembly packaging film.
A first buffer layer 11 and an infrared reflection layer 13 are arranged between the EVA substrate layer 10 and the glass side EVA layer 14; the buffer layer is mainly formed by overlapping an organic layer and an inorganic layer, the barrier properties of different materials are mainly utilized, the inorganic layer can be protected by the organic layer, the first buffer layer 11 can be formed by a vapor deposition method, the infrared reflecting layer can be formed by a physical vapor deposition method, the material of the inorganic layer can be selected from aluminum oxide, titanium oxide, silicon oxide, zirconium oxide or silicon nitride, the organic layer is prepared by a molecular layer deposition method, and the precursor comprises: cyanate, trimethylaluminum, ethylenediamine, ethylene glycol, glycerol, and maleic anhydride, and the infrared reflecting layer can be made of silver, copper or aluminum.
A second buffer layer 12 is arranged between the EVA substrate layer 10 and the cell side EVA layer 15; the second buffer layer 12 is formed by vapor deposition, and is symmetrically formed on both sides of the EVA substrate layer 10, so that it can be directly formed on both front and back sides in a winding processing apparatus, and the buffer layers with the same thickness can be symmetrically formed on both sides of the EVA substrate layer by controlling reaction conditions, so as to be respectively used as the first buffer layer 11 and the second buffer layer 12.
One side of the glass-side EVA layer 14, which is attached to glass, comprises a third buffer layer 16;
the first buffer layer 11 and the second buffer layer 12 have the same thickness and have a symmetrical structure with respect to the EVA substrate layer 10;
the first buffer layer 11 and the second buffer layer 12 include organic material layers and inorganic material layers which are repeatedly stacked, the organic material layers are prepared by a molecular layer deposition method, and the inorganic material layers are prepared by an atomic layer deposition method;
the buffer layer is prepared by overlapping the organic material layer and the inorganic material layer, the inorganic layer and the organic layer can firstly separate water vapor and ions by utilizing different properties, different materials for blocking are added, atomic layer deposition and molecular layer deposition are respectively adopted, and the characteristics of atomic layer deposition and molecular layer deposition are utilized, so that the formed film is continuous in most cases, microcracks or gaps can not appear, a complete blocking surface can be formed, in addition, the inorganic layer is clamped between the organic layers, stress changes caused by other parts can be relieved through the organic layers, for example, when an encapsulation film is used for lamination, internal transverse acting force caused by lamination is relieved, for example, in the use process, the stress caused by temperature changes can be avoided, and the blocking layer arranged in this way can avoid damaging the inorganic layer and affecting the blocking performance of the inorganic layer.
In a word, the buffer layers are alternately formed by organic and inorganic layers, so that the blocking effect of the organic layer and the inorganic layer can be utilized respectively, and the influence of stress on the inorganic layer can be relieved due to the introduction of the organic layer.
Both sides of the first buffer layer 11 and the second buffer layer 12 are organic layers formed by a molecular layer deposition method, and the surfaces of the organic layers are modified by plasma chemical treatment. The plasma chemical treatment can increase the adhesiveness of the surface of the organic layer, enhance the connection strength of the organic layer and other layers, and improve the strength of the formed assembly structure.
The glass side EVA layer 14 includes up-conversion luminescent nanoparticles, which have a main function of converting light in the infrared band into light in the visible band, further improving the utilization rate of the solar cell for the light band, and another function of up-conversion luminescent nanoparticles is to reduce the accumulation of heat in the solar cell module and reduce the temperature of the module as much as possible.
The third buffer layer 16 also includes an EVA cover layer 18 on the outside.
Specifically, the thickness of the third buffer layer is 50% of the thickness of the first buffer layer.
Specifically, the EVA cover layer 18 has a thickness of 15% -30% of the glass-side EVA layer thickness.
Specifically, the thickness of the first buffer layer is 50-200nm.
Specifically, the EVA cover layer 18 has a thickness of 15% -30% of the thickness of the glass-side EVA layer 14.
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a packaging film of a photovoltaic double-sided module according to the present application, and the present application further provides a method for manufacturing a packaging film of a photovoltaic double-sided module, which includes the following steps:
step one, providing an EVA substrate layer 10;
step two, forming buffer layers alternately formed by an organic material layer and an inorganic material layer on two sides of the EVA substrate layer 10 through a molecular layer deposition and atomic layer deposition method;
forming an infrared reflecting layer 13 on one side of the EVA substrate, which is close to the glass;
step four, stacking the glass side EVA layers on two sides of the structure obtained in the step three, wherein the glass side EVA layers are stacked on one side close to glass, and the cell side EVA layers are stacked on one side close to a cell, and are EVA materials mixed with up-conversion luminescent nano particles;
and fifthly, forming a third buffer layer on one side, attached to the glass, of the glass side EVA layer, and after forming the third buffer layer, further forming an EVA covering layer 18 on the surface of the third buffer layer.
In one embodiment, after the first buffer layer 11 and the second buffer layer 12 are formed, the first buffer layer 11 and the second buffer layer 12 are modified by plasma chemical treatment.
Specifically, after the third buffer layer 16 is formed, an EVA covering layer 18 is further formed on the surface thereof.
Examples 1
Providing an EVA substrate layer 10 having a thickness of 100 μm; forming organic material layers and inorganic material layers on the EVA substrate layer 10 by a molecular layer deposition and atomic layer deposition method to alternately form buffer layers with the thickness of 100 nm; wherein the inorganic layer is alumina, and the organic layer is formed by cyanate and ethylenediamine
Forming an infrared reflecting layer with the thickness of 50nm on one side of the EVA substrate close to the glass, wherein the specific material of the infrared reflecting layer can be silver;
stacking a glass side EVA layer with the thickness of 100 mu m on two sides of the obtained structure, wherein the glass side EVA layer is close to glass, the cell side EVA layer with the thickness of 100 mu m is stacked on one side of the cell, and the glass side EVA layer is an EVA material mixed with up-conversion luminescent nano particles;
and forming a third buffer layer with the thickness of 50nm on one side of the glass side EVA layer attached with glass, and further forming an EVA coating layer with the thickness of 30 mu m on the surface of the third buffer layer after forming the third buffer layer.
Examples 2
Providing an EVA substrate layer 10 having a thickness of 80 μm; forming organic material layers and inorganic material layers on the EVA substrate layer 10 by a molecular layer deposition and atomic layer deposition method to alternately form buffer layers with the thickness of 50 nm; wherein the inorganic layer is alumina, and the organic layer is formed by cyanate and ethylenediamine
Forming an infrared reflecting layer with the thickness of 25nm on one side of the EVA substrate close to the glass, wherein the specific material of the infrared reflecting layer can be silver;
stacking a glass side EVA layer with the thickness of 80 mu m on two sides of the obtained structure, wherein the glass side EVA layer is close to glass, the cell side EVA layer with the thickness of 80 mu m is stacked on one side of the cell, and the glass side EVA layer is an EVA material mixed with up-conversion luminescent nano particles;
and forming a third buffer layer with the thickness of 25nm on one side, attached to the glass, of the glass side EVA layer, and further forming an EVA coating layer with the thickness of 20 mu m on the surface of the third buffer layer after forming the third buffer layer.
Example (III)
Providing an EVA substrate layer 10 having a thickness of 150 μm; forming organic material layers and inorganic material layers on the EVA substrate layer 10 by a molecular layer deposition and atomic layer deposition method to alternately form buffer layers with the thickness of 150 nm; wherein the inorganic layer is alumina, and the organic layer is formed by cyanate and ethylenediamine
Forming an infrared reflecting layer with the thickness of 70nm on one side of the EVA substrate close to the glass, wherein the specific material of the infrared reflecting layer can be silver;
stacking a glass side EVA layer with the thickness of 150 mu m on two sides of the obtained structure, wherein the glass side EVA layer is close to glass, the cell side EVA layer with the thickness of 150 mu m is stacked on one side of the cell, and the glass side EVA layer is an EVA material mixed with up-conversion luminescent nano particles;
and forming a third buffer layer with the thickness of 75nm on one side of the glass side EVA layer attached with glass, and further forming an EVA coating layer with the thickness of 45 mu m on the surface of the third buffer layer after forming the third buffer layer.
Comparative example one
A common EVA encapsulant film with a thickness of 350 μm.
TABLE 1 component power attenuation comparison
It was found from examples and comparative examples that the light transmittance was decreased as the thickness of the EVA substrate, the glass-side EVA layer, and the battery-side EVA layer became thicker, but the attenuation of the PID test was relatively improved, and compared with the conventional EVA film, it was found that the encapsulation film formed by the method of the present application had a significant improvement in the anti-PID effect on the finally formed module.
In addition, referring to fig. 3, fig. 3 is a schematic diagram of an apparatus for manufacturing a packaging film of a photovoltaic double-sided module according to the present application, and the present application further provides an apparatus for manufacturing a packaging film of a photovoltaic double-sided module, which includes a winding and conveying mechanism 211:
the first forming chamber 21 includes a repeated molecular layer deposition module 212 and an atomic layer deposition module 213, which are used for simultaneously forming the first buffer layer 11 and the second buffer layer 12 on two sides of the EVA substrate layer 10 respectively, the mechanical structures of the molecular layer deposition module 212 and the atomic layer deposition module 213 can be set to be the same mounting component, the corresponding structures in the chamber are set to be the same, the molecular layer deposition module 212 and the atomic layer deposition module 213 can be selectively mounted, so that the control of the deposition thickness of the inorganic layer and the organic layer can be realized, and according to the characteristics of saturation self-limit of atomic layer deposition and molecular layer deposition, the influence of the transmission speed of the substrate on the film thickness during the roll-to-roll operation is not required to be considered;
a physical vapor deposition chamber 22 including a physical vapor deposition unit 221, wherein the physical vapor deposition chamber 22 is used for forming the infrared reflection layer 13 by a physical vapor deposition manner; the infrared reflecting layer 13 is used for reflecting infrared rays passing through the packaging film, so that heat generated by the infrared rays to the assembly is reduced as much as possible.
A first lamination chamber 23 including a lamination mechanism 231, wherein the first lamination chamber 23 is formed by laminating the EVA substrate layer 10, on which the first buffer layer 11 and the second buffer layer 12 are formed, with the glass layer EVA layer and the cell side EVA layer 15, and then laminating them together;
the second forming chamber 24 includes a repeated molecular layer deposition module, an atomic layer deposition module, and a plasma processing module 241 for forming the third buffer layer 16 on the glass side of the glass-side EVA layer 14, and the plasma processing module is used for performing plasma processing on the surface.
Specifically, a second lamination chamber 25 is further included, and a lamination mechanism 231 is also included, and the mechanical structure may be the same as the lamination mechanism 231 in the first lamination chamber 23 for further forming the EVA coating layer 18 on the surface thereof after the third buffer layer 16 is to be formed.
Each equipment is arranged linearly, EVA substrate layer 10 glass side EVA layer 14 the problem of producing different thermal stress to EVA substrate layer both sides in the deposit in advance is formed to the both sides, EVA substrate layer 10 gets into first formation cavity 21 through coiling transport mechanism earlier, in first formation cavity 21, form simultaneously in the both sides symmetry of EVA substrate layer 10, directly form simultaneously openly and the opposite side, can form the buffer layer of the same thickness through control reaction condition in EVA substrate layer bilateral symmetry, regard as first buffer layer 11 and second buffer layer 12 respectively, form the buffer layer of symmetry of both sides, simultaneously form the buffer layer in both sides and can alleviate the problem of deposit in-process to EVA substrate layer both sides production thermal stress, simultaneously, form the buffer layer including two-layer, can play dual buffering's effect, combine the buffer layer to the optimization of separation effect, through two-layer buffer layer strengthening separation effect, make the packaging structure of finally formed photovoltaic module have stronger protect function to the battery piece.
To sum up: the application provides a packaging film of a photovoltaic double-sided assembly and a preparation method thereof, wherein a buffer layer, an infrared reflecting layer and other structures are added into the packaging film, and a plurality of buffer layers are formed to optimize the blocking effect of the packaging film, and a structural layer for blocking ions and water vapor is added into the packaging film, so that the PID (potential induced degradation) resistance effect of the packaging film assembly is improved; the application also provides a preparation method and a preparation device of the packaging film, which can realize the preparation of the packaging film, and provides a convenient mode.
The foregoing is merely one specific embodiment of the application, and any modifications made in light of the above teachings are intended to fall within the scope of the application.
Claims (10)
1. The utility model provides a two-sided subassembly packaging film of photovoltaic, includes the EVA substrate layer both sides include glass side EVA layer and battery piece side EVA layer respectively, its characterized in that:
a first buffer layer and an infrared reflection layer are arranged between the EVA substrate layer and the glass side EVA layer;
a second buffer layer is arranged between the EVA substrate layer and the cell side EVA layer;
the thickness of the first buffer layer is the same as that of the second buffer layer, and the first buffer layer and the second buffer layer have structures symmetrical relative to the EVA substrate layer;
the first buffer layer and the second buffer layer comprise organic material layers and inorganic material layers which are repeatedly stacked, wherein the organic material layers are prepared by adopting a molecular layer deposition method, and the inorganic material layers are prepared by adopting an atomic layer deposition method;
both sides of the first buffer layer and the second buffer layer are organic layers formed by a molecular layer deposition method, and the surfaces of the organic layers are modified by plasma chemical treatment;
the glass side EVA layer comprises up-conversion luminescent nano particles;
one side of the glass side EVA layer attached to the glass comprises a third buffer layer, and the outer side of the third buffer layer further comprises an EVA covering layer.
2. The photovoltaic double-sided assembly encapsulation film of claim 1, wherein the thickness of the third buffer layer is 50% of the thickness of the first buffer layer.
3. The photovoltaic double-sided assembly encapsulation film of claim 2, wherein the EVA cover layer has a thickness of 15% -30% of the glass-side EVA layer thickness.
4. The photovoltaic double-sided assembly encapsulation film of claim 1, wherein the first buffer layer has a thickness of 50-200nm.
5. The photovoltaic double-sided assembly encapsulant film of claim 1, wherein the infrared reflective layer has a thickness of less than 100nm.
6. The manufacturing method of the photovoltaic double-sided assembly packaging film is characterized by comprising the following steps of:
step one, providing an EVA substrate layer;
step two, forming buffer layers alternately formed by an organic material layer and an inorganic material layer on two sides of the EVA substrate layer through a molecular layer deposition and atomic layer deposition method;
forming an infrared reflecting layer on one side of the EVA substrate, which is close to the glass;
step four, stacking glass side EVA layers on two sides of the structure obtained in the step three, wherein the glass side EVA layers are stacked on one side close to glass, and the cell side EVA layers are stacked on one side close to a cell, and the glass side EVA layers are EVA material layers mixed with up-conversion luminescent nano particles;
and fifthly, forming a third buffer layer on one side, attached to the glass, of the glass side EVA layer, and after forming the third buffer layer, further forming an EVA covering layer on the surface of the third buffer layer.
7. The method of claim 6, wherein in the step of forming the buffer layer, the last layer is an organic layer formed by a molecular layer deposition method.
8. The method of manufacturing a photovoltaic double-sided module packaging film according to claim 7, wherein after the first buffer layer and the second buffer layer are formed, the first buffer layer and the second buffer layer are modified by plasma chemical treatment.
9. The manufacturing equipment of the photovoltaic double-sided assembly packaging film is characterized by comprising a winding transmission mechanism:
the first forming chamber comprises a repeated molecular layer deposition module and an atomic layer deposition module, and is used for simultaneously forming a first buffer layer and a second buffer layer on two sides of the EVA substrate layer respectively;
the physical vapor deposition chamber is used for forming an infrared reflecting layer in a physical vapor deposition mode;
the first lamination chamber is used for laminating the EVA substrate layer with the first buffer layer and the second buffer layer formed on the surfaces, the glass layer EVA layer and the cell side EVA layer into a whole;
the second forming chamber comprises a repeated molecular layer deposition module, an atomic layer deposition module and a plasma processing module, wherein the repeated molecular layer deposition module, the atomic layer deposition module and the plasma processing module are used for forming a third buffer layer on one side, which is attached to glass, of the EVA layer on the glass side, and the plasma processing module is used for carrying out plasma processing on the surface.
10. The apparatus for manufacturing a photovoltaic double-sided module packaging film according to claim 9, further comprising a second lamination chamber for further forming an EVA coating layer on a surface thereof after the third buffer layer is formed.
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| CN113583588A (en) * | 2021-08-27 | 2021-11-02 | 杭州福斯特应用材料股份有限公司 | Photovoltaic module packaging adhesive film and photovoltaic module |
| WO2023151634A1 (en) * | 2022-02-10 | 2023-08-17 | 隆基乐叶光伏科技有限公司 | Black weather-resistant layer, photovoltaic module and color photovoltaic module |
| CN218333819U (en) * | 2022-05-28 | 2023-01-17 | 上海海优威应用材料技术有限公司 | Three-layer composite glue film |
| CN217781043U (en) * | 2022-08-17 | 2022-11-11 | 杭州福斯特应用材料股份有限公司 | Packaging adhesive film and photovoltaic module |
| CN218665863U (en) * | 2022-08-31 | 2023-03-21 | 江苏中来新材科技有限公司 | Composite packaging adhesive film and photovoltaic module |
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