CN116931379A - Manufacturing method of micro light emitting diode display panel with light blocking layer - Google Patents
Manufacturing method of micro light emitting diode display panel with light blocking layer Download PDFInfo
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- CN116931379A CN116931379A CN202210373241.5A CN202210373241A CN116931379A CN 116931379 A CN116931379 A CN 116931379A CN 202210373241 A CN202210373241 A CN 202210373241A CN 116931379 A CN116931379 A CN 116931379A
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A manufacturing method of a micro light emitting diode display panel with a light blocking layer comprises the following steps: performing optical image scanning and calculation on a substrate on which a plurality of micro light emitting diodes are manufactured, and generating a physical virtual photomask, wherein each micro light emitting diode is defined as a pixel area by the physical virtual photomask; forming a negative photoresist layer on the substrate, wherein the thickness of the negative photoresist layer is greater than that of each micro light emitting diode; performing a laser direct writing exposure process on the negative photoresist layer by using the physical virtual photomask, and removing the negative photoresist layer defined in each pixel region; and curing the negative photoresist layer which is not removed to form a black matrix structure. The invention uses the laser direct writing exposure (Laser Direct Imaging, LDI) and the developing technology to manufacture the black matrix layer between the mu LEDs, thereby accurately manufacturing the black matrix layer capable of filling the gaps between the mu LEDs, further solving the technical problems of oblique crystal grains, low yield and the like in the mu LED technology, and further achieving the effects of high yield and reduced technology cost.
Description
Technical Field
The present invention relates to a micro light emitting diode technology, and more particularly, to a method for manufacturing a micro light emitting diode display panel with a light blocking layer.
Background
The handheld mobile device, including smart phones, tablet computers, etc., has been built with digital cameras, and even for recognizing structural light of human face, time of flight (TOF) imaging systems, etc., has been adopted. However, in order to employ these advanced image sensing systems, whether smart phones or tablet computers, even notebook computers, etc., a corresponding hardware mechanism is required to enable the image sensing systems to emit infrared light or emit light sources, and to receive reflected infrared light or receive reflected light sources, etc., without being affected by lateral light leakage. A micro light emitting diode display (Micro Light Emitting Diode Display, μled) is a new generation of displays that use micro light emitting diodes as the light emitting elements of the display. The technology is to thin, miniaturize and array LEDs to a single LED size of only 1-10 μm, transfer the micro LEDs to a circuit substrate in batches, adhere the surface of the circuit substrate, and then form the required micro LED panel of the micro LED display together with the electrodes, transistors, upper electrodes, protective layers and the like on the circuit substrate.
The mu LED has the excellent characteristics of self-luminescence, low power consumption, quick response time, high brightness, ultra-high contrast, wide color gamut, wide viewing angle, ultra-light and thin performance, long service life and adaptability to various working temperatures, and has overwhelming advantages compared with the technical specifications of LCD and OLED.
However, after the die are transferred and attached to the substrate 10 containing the electrodes, there are problems of lateral mixing and substrate reflection during the light emission of the individual die, and these two problems may cause problems such as unclear pixels and reduced contrast. Therefore, the prior art has adopted the fabrication of Black Matrix (Black Matrix) to solve this technical problem.
However, in the actual mass production process, the problem of skew or uneven placement of the die is unavoidable in the process of die mass transfer, which results in an inability to increase the yield in the process of die mass transfer. Because, if the black matrix is prefabricated and then the large amount of transfer is performed, if the die arrangement is skewed, the die must be recalibrated. In addition, in the subsequent maintenance, the problem of difficult die replacement may be caused by isolation of the black matrix.
In addition, the black matrix is produced by adopting an exposure developing method, and a photomask must be prepared in advance, and when the problem of die deflection during the process of transferring a large amount of data occurs, the accuracy of the photomask may cause a further problem of excessively low yield of mass production.
Therefore, how to manufacture a suitable black matrix structure by increasing the yield of mass production and solving the problem of possible skewed die placement becomes an important development direction for the development of the LED technology.
Disclosure of Invention
The invention aims to provide a manufacturing method of a micro light emitting diode display panel with a light blocking layer, which uses laser direct writing exposure (Laser Direct Imaging, LDI) and a developing process to manufacture a black matrix layer between mu LEDs so as to accurately manufacture the black matrix layer capable of filling gaps between the mu LEDs, thereby solving the technical problems of oblique crystal grains, low yield and the like in the mu LED process, and further achieving the special technical effects of high yield, reduced process cost and the like.
The invention provides a method for manufacturing a micro light emitting diode display panel with a light blocking layer, which comprises the following steps: performing optical image scanning and calculation on a substrate on which a plurality of micro light emitting diodes are manufactured, and generating a physical virtual photomask, wherein each micro light emitting diode is defined as a pixel area by the physical virtual photomask; forming a negative photoresist layer on the substrate, wherein the thickness of the negative photoresist layer is greater than that of each micro light emitting diode; performing a laser direct writing exposure process on the negative photoresist layer by using the physical virtual photomask, and removing the negative photoresist layer defined in each pixel region; and curing the negative photoresist layer which is not removed to form a black matrix structure.
Optionally, the thickness of the negative photoresist layer is 10-60 μm.
Optionally, the physical dummy mask defines the pixel area according to a physical photograph of each of the micro light emitting diodes, and when the micro light emitting diodes in each of the micro light emitting diodes are skewed, the pixel area is correspondingly generated into a skewed pixel area.
Optionally, the black matrix structure and the micro light emitting diode form a space of less than 1 micron.
Optionally, the black matrix structure and the micro light emitting diode form a space of less than 3 microns.
Optionally, the black matrix structure forms a spacing of less than 5 microns with the micro light emitting diode.
Optionally, each of the pixel regions includes one of the micro light emitting diodes.
Optionally, each of the pixel regions includes three of the micro light emitting diodes.
Optionally, each of the pixel regions includes six micro light emitting diodes.
Optionally, the method further comprises: forming a quantum dot layer on the pixel region of each micro light emitting diode; and curing the quantum dot layer.
The manufacturing method of the micro light emitting diode display panel with the light blocking layer utilizes the laser direct writing exposure (Laser Direct Imaging, LDI) and the developing technology to manufacture the black matrix layer between the mu LEDs so as to accurately manufacture the black matrix layer capable of filling the gaps between the mu LEDs, thereby solving the technical problems of oblique crystal grains, low yield and the like in the mu LED technology, and further achieving the special technical effects of high yield, reduced technology cost and the like.
Drawings
Fig. 1 is a flowchart of a method for fabricating a micro light emitting diode display panel with a light blocking layer according to an embodiment of the invention.
Fig. 2A to 2G are schematic cross-sectional views and top views of a finished product of a process of manufacturing a micro light emitting diode display panel with a light blocking layer according to an embodiment of the invention.
Fig. 3 is a flowchart of a method for fabricating a micro light emitting diode display panel with a light blocking layer according to another embodiment of the present invention.
Fig. 4A to fig. 4H are schematic cross-sectional views and top views of a finished product of a manufacturing method of a micro light emitting diode display panel with a light blocking layer according to another embodiment of the present invention.
In the figure:
2. 3: local area;
10: a substrate;
30: a negative photoresist layer;
30-1-1, 30-1-2, 30-1-3, 30-1-4, 30-1-5, 30-1-6: a pixel region;
31-1-1, 31-1-2, 31-1-3, 31-1-4, 31-1-5, 31-1-6: a pixel region;
50: a laser direct-write exposure head;
51: laser;
201-3-1, 201-3-2, 201-3-3: an electrode layer;
301-1-1, 301-1-2, 301-1-3: a micro light emitting diode;
401-3-1: and a quantum dot layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to limit the invention, so that those skilled in the art may better understand the invention and practice it.
According to the embodiment of the invention, the black matrix layer between the mu LEDs is manufactured by using the laser direct writing exposure (Laser Direct Imaging) and the developing process, so that the black matrix layer which can be filled in the gaps between the mu LEDs is accurately manufactured, the technical problems of oblique crystal grains, low yield and the like in the mu LED process are solved, and the special technical effects of high yield, process cost reduction and the like are achieved.
Referring to fig. 1 and fig. 2A-2G, a flowchart of an embodiment of a method for manufacturing a micro light emitting diode display panel with a light blocking layer according to the present invention, a cross-sectional schematic diagram of each manufacturing stage, and a top view of a finished product are shown, wherein the method for manufacturing a micro light emitting diode display panel with a light blocking layer according to the present invention comprises:
step S101: and performing optical image scanning and calculation on the substrate with the manufactured micro light emitting diode pixel groups to generate a physical virtual photomask, wherein each micro light emitting diode pixel group is defined as a pixel area by the physical virtual photomask. The invention adopts a post-process mode to manufacture the black matrix, and aims to solve the problem of possible skew of the mu LED during huge transfer, thereby providing the yield of manufacturing the black matrix. The physical virtual mask is generated by optical image scanning and calculation, and can be performed in various ways, for example, scanning is performed by a high-resolution optical camera, laser or infrared, and the position of each micro light emitting diode is positioned, and finally, positioning image information (including information such as skew angle) of the micro light emitting diode is produced. Because the positioning image information represented by the physical virtual mask is recorded by the 'actual position and the skew angle' of the micro light emitting diode which is already transferred in huge quantity, and then the black matrix is manufactured by the subsequent laser cutting process, the skew problem generated in the huge quantity transferring process can be completely solved, and the process yield of the micro light emitting diode is greatly improved.
In this step, the prior art is to expose and develop through a fixed photomask, and then to manufacture a black matrix; the present invention goes against the way, and the step is adopted without making the photomask in advance. By executing this step, the result of the macro-shift of each micro-led on the substrate 10 of the fabricated micro-led pixel group can be grasped. The configuration of the micro led pixel group is shown in fig. 2E, and fig. 2E is a configuration diagram of the physical dummy mask. Each pixel region includes basic RGB pixels, which are respectively the electrode layer 201-3-1, and the electrode layer 201-3-1 in fig. 2A and fig. 2G, and the micro light emitting diode 301-3-1, the micro light emitting diode 301-3-2, and the micro light emitting diode 301-3-3 formed on the same, which are electrically connected, and the top view thereof is the state of fig. 2G (the top view is the final completed view). It can be seen that fig. 2G is a schematic diagram of the led in the pixel area with skew, and when such skew occurs, the step can correct the mask by using the physical dummy mask made by the actual photograph. That is, the physical virtual mask defines the pixel area according to a physical photograph of each micro light emitting diode, and when the micro light emitting diode in each micro light emitting diode is skewed, the pixel area manufactured later is correspondingly generated into a skewed pixel area. In other words, each physical dummy mask is a customized product of each wafer, so that the manufacturing yield of the black matrix can be greatly improved. In addition, the physical virtual mask is used, so that the cost of the physical mask can be reduced, and the production cost is further reduced.
Step S102: forming a negative photoresist layer on the substrate with the pixel group corresponding to each micro light emitting diode, wherein the thickness of the negative photoresist layer is larger than that of each micro light emitting diode. As shown in fig. 2B, the negative photoresist layer 30 may be formed by spin coating or spray coating. In addition, since the negative photoresist layer is to be made in a black matrix structure, a negative photoresist material doped with a black pigment may be selected.
Step S103: and performing laser direct writing exposure on the negative photoresist layer by using the physical virtual photomask, and removing the negative photoresist layer defined in the pixel area of each micro light emitting diode pixel group. This step is generally referred to as the laser direct write exposure and development step, and since the photoresist material selected is a negative photoresist, the unexposed portions will be removed by the developer. As shown in FIG. 2C, since the laser direct writing exposure head 50 can emit the laser light 51, the exposure range can be controlled directly by the computer software. In other words, since the physical dummy mask is an actual photograph of the substrate 10 on which the micro led pixel group has been fabricated for each actual piece (as in the aspect of fig. 2E), the laser direct writing exposure head 50 can emit the laser light 51 directly for the skewed portion without the physical mask for exposure. The exposed negative photoresist layer 30 will remain as a black matrix structure which is reserved for the present invention.
Step S104: curing the negative photoresist layer which is not removed to form a black matrix structure; for example, after exposure, the unexposed portions are removed with a developer, and then the black matrix structure formed by the negative photoresist layer 30 is further cured into a permanent material layer by thermal curing or photo curing, as shown in fig. 2D, 2E, 2F, and 2G.
Comparing FIG. 2F with FIG. 2G, it can be seen that the micro LEDs 301-1-1, 301-1-2, 301-1-3 in the local 2-pixel region 30-1-1 are normally fabricated, while the micro LEDs 301-3-1 and 301-3-3 in the local 3-pixel region 30-1-3 are skewed due to mass transfer in FIG. 2F. The invention can make the window of the pixel region 30-1-3 and other pixel regions 30-1-1, pixel region 30-1-2, pixel region 30-1-4, pixel region 30-1-5 and pixel region 30-1-6 different by adjusting the physical virtual mask; and the step S103 is performed to manufacture the window structure of the different pixel regions 30-1-3 as shown in FIG. 2G.
In another embodiment of the present invention, the distance between the micro light emitting diode and the black matrix layer can be increased, for example, the average distance is 3-15 micrometers (μm), so that the skew of the micro light emitting diode can be tolerated to a large extent, and thus, the structure of the pixel region can be standardized without fine tuning. And when the deflection degree of the micro light emitting diode is too large, the size and the structure of the pixel area are adjusted.
The photoresist of the present invention is a negative photoresist, but preferably, the photoresist layer of the present invention is a high resolution negative photoresist. The material of the photoresist layer is mainly composed of polymer Resin (Resin), photo initiator (Photo initiator), monomer (Monomer), solvent (Solvent), and Additives (Additives).
Among them, the polymer Resin (Resin) has the functions of adhesion, developability, pigment dispersibility, fluidity, heat resistance, chemical resistance, and resolution in the material of the resist layer; the function of the Photo initiator is the photosensitive property and resolution capability; the Monomer (Monomer) has the functions of adhesiveness, developability and resolution; the function of the Solvent (Solvent) is viscosity and coating properties; the function of the Additives (Additives) is then coatability, leveling and foamability.
The polymer Resin (Resin) may be a polymer or copolymer containing carboxylic acid groups (COOH), such as Acrylic Resin, acryl-Epoxy (Epoxy) Resin, melamine Resin, acryl-Styrene (Styrene) Resin, phenol-formaldehyde (PhenolicAldehyde) Resin, or any mixture thereof, but is not limited thereto. The weight percentage of the resin in the photoresist may range from 3% to 30%.
The monomer can be water insoluble and water soluble monomer, wherein the water insoluble monomer (water-insolubleMonomer) can be penterythritol triacrylate, trimethylether propane trimethacrylate, tri, di-ethanol isocyanate triacrylate, di, trimethylol propane tetraacrylate, diisoamyl tetraacrylate, pentaacrylate, or isoamyl tetraacetate; dihexyltetraol hexaacetate, diisoamyl tetrol hexaacetate, or is a polyfunctional monomer, a dendrimer/multi-cluster acrylate oligomer, a multi-cluster polyether acrylate, or urethane. The water-soluble monomer (water-soluble monomer) may be an Ether (EO) base or a pro-ether (PO) monomer; examples are: di- (di-oxyethylene oxy ethylene) vinyl acrylic acid unitary, pentadecaethylene trimethacrylate, triacontethylene oxide di, di-bisphenol methane diacrylate, thirty ethylene oxide di, di-bisphenol methane dimethacrylate unitary, icosaethylene oxide trimethacrylate, pentadecaethylene oxide trimethacrylate, methyl penta-fifty oxy ethylene monomethacrylate, di-hundred ethylene diacrylate, tetra-hundred ethylene diacrylate unitary, tetra-hundred ethylene dimethacrylate, hexa-hundred ethylene diacrylate, hexa-hundred ethylene dimethacrylate, polyoxypropylene monomethacrylate. Of course, it is also possible to add two or more monomers (monomers) to form a co-monomer (co-monomer). The weight percent of monomer or comonomer in the photoresist may range from 0.1% to 99%.
The photoinitiator (Photo initiator) may be selected from acetophenone-based compounds (acetohenone), benzophenone-based compounds (benzoquinone) or bisimidazole-based compounds (bis_imidozole), benzoin-based compounds (Benzoin), benzil-based compounds (Benzil), α -amino ketone-based compounds (α -amino ketone), acylphosphine oxide-based compounds (Acyl phosphine oxide) or benzoic acid ester-based compounds, and any mixture of the above photoinitiators may be used, but is not limited thereto. The weight percentage of photoinitiator in the photoresist may range from 0.1 to 10%.
The Solvent (Solvent) may be ethylene glycol propyl ether (ethylene glycol monopropylether), diethylene glycol dimethyl ether (di-ethylene glycol dimethyl ether), tetrahydrofuran, ethylene glycol methyl ether (ethylene glycol monomethyl ether), ethylene glycol ethyl ether (ethyleneglycol monoethyl ether), diethylene glycol monomethyl ether (di-ethylene glycol mono-methyl ether), diethylene glycol monoethyl ether (di-ethylene glycol mono-ethyl ether), diethylene glycol monobutyl ether (di-ethylene glycol mono-butyl ether), propylene glycol methyl ether acetate (propylene glycol mono-methyl ether acetate), propylene glycol ethyl ether acetate (propylene glycol mono-ethyl ether acetate), propylene glycol propyl ether acetate (propylene glycol mono-propyl ether acetate), ethyl 3-ethoxypropionate (ethyl3_ ethoxy propionate), etc., or any mixture of the above solvents, but is not limited thereto. The solvent may be present in the photoresist in a range of 0.1% to 99% by weight.
The additives are generally pigment dispersants, which are components necessary for the pigment-containing photoresist, generally nonionic surfactants, such as, for example: solsperse39000, solsperse21000, the weight percent of this dispersant in the photoresist can range from 0.1 to 5%.
In the step S103 of the present invention, the laser direct writing exposure and development further include: (1) Substrate cleaning (Substrate cleaning); (2) Coating; (3) soft baking (pre-baking); (4) exposure; (5) development, and the like.
Next, referring to fig. 3 and fig. 4A to 4H, a flowchart of another embodiment of a method for manufacturing a micro light emitting diode display panel with a light blocking layer according to the present invention, a cross-sectional schematic diagram of each manufacturing stage, and a top view of a finished product are shown, wherein the method for manufacturing a micro light emitting diode display panel with a light blocking layer according to the present invention comprises:
step S111: optical image scanning and calculation are carried out on the substrate with the micro light emitting diodes manufactured, and a physical virtual photomask is generated. By performing this step, the result of the macro-shift of each micro-led in the substrate 10 of the manufactured micro-led can be grasped. The allocation of the micro light emitting diodes is shown in fig. 4F, the pixels are sequentially arranged as RGB pixels, which are respectively the pixel region 31-1-1, the pixel region 31-1-2, the pixel region 31-1-3, the pixel region 31-1-4, the pixel region 31-1-5, and the pixel region 31-1-6 in fig. 4F, and fig. 4F is a configuration diagram of the physical virtual mask. Wherein the electrode layer 201-3-1, and the micro light emitting diode 301-3-1 formed thereon, on which the electrical connection has been completed, is in the state of fig. 4H (the drawing is the final completed drawing) in the upper view. It can be seen that fig. 4H is a schematic diagram showing the micro leds in the pixel regions 31-1-3 having a skew, and when such a skew occurs, the step can correct the mask by using the physical dummy mask made by the actual photographed photo. In other words, each physical dummy mask is a customized product of each wafer, so that the manufacturing yield of the black matrix can be greatly improved. In addition, the physical virtual mask is used, so that the cost of the physical mask can be reduced, and the production cost is further reduced.
Step S112: and forming a negative photoresist layer on the substrate with the manufactured micro light emitting diodes, wherein the thickness of the negative photoresist layer is larger than that of each micro light emitting diode. As shown in fig. 4B, the negative photoresist layer 30 may be formed by spin coating or spray coating. In addition, since the negative photoresist layer is to be made in a black matrix structure, a negative photoresist material doped with a black pigment may be selected.
Step S113: and performing laser direct writing exposure on the negative photoresist layer by using the physical virtual photomask, and removing the negative photoresist layer covered on each micro light emitting diode. This step is generally referred to as the laser direct write exposure and development step, and since the photoresist material selected is a negative photoresist, the unexposed portions will be removed by the developer. As shown in FIG. 4C, since the laser direct writing exposure head 50 can emit the laser light 51, the exposure range can be controlled directly by the computer software. In other words, since the physical dummy mask is an actual photograph of the substrate 10 on which the micro led pixel group has been fabricated for each actual piece (as in the case of fig. 4F), the laser direct writing exposure head 50 can emit the laser light 51 directly for the skewed portion without the physical mask for exposure. The exposed negative photoresist layer 30 will remain as a black matrix structure which is reserved for the present invention.
Step S114: curing the negative photoresist layer which is not removed to form a black matrix structure. For example, after exposure, the unexposed portions are removed with a developer, and then the black matrix structure formed by the negative photoresist layer 30 is further cured into a permanent material layer by thermal curing or photo curing, as shown in fig. 4E, 4F, 4G, and 4H.
Comparing FIG. 4G with FIG. 4H, it can be seen that the micro light emitting diode 301-1-1 in the local 2-pixel region 31-1-1 is normally fabricated in FIG. 4G, while the micro light emitting diode 301-1-3 in the local 3-pixel region 31-1-3 is skewed due to the mass transfer in FIG. 4H. The invention can make the window of the pixel region 31-1-3 different from other pixel regions 31-1-1, 31-2, 31-1-4, 31-1-5 and 31-1-6 by adjusting the physical virtual mask; and the step S103 is performed to manufacture the window structure of the different pixel regions 31-1-3 as shown in FIG. 4H.
Wherein, a distance between the micro light emitting diode and the light blocking layer is less than 3 microns, more particularly less than 1 micron, and the pixel area is in a skew state. Due to the technology adopted by the present invention, the light blocking layers in a skewed state, as shown in fig. 4H, are a great technical feature of the present invention. In another embodiment of the present invention, the distance between the micro light emitting diode and the black matrix layer can be increased, for example, the average distance is 3-15 micrometers (μm), so that the skew of the micro light emitting diode can be tolerated to a large extent, and thus, the structure of the pixel region can be standardized without fine tuning. And when the deflection degree of the micro light emitting diode is too large, the size and the structure of the pixel area are adjusted.
The embodiments of fig. 3 to 4H occupy one pixel region for each pixel, whereas the embodiments of fig. 1 to 2G differ in that each three pixels are used as one pixel region. However, the procedure for manufacturing the black matrix is basically the same for both.
In the embodiments of fig. 3 to 4H, since each pixel occupies a separate pixel area, the present invention further increases the processes of step S115 and step S116, so that each pixel area is filled with the quantum dot layer. The description is as follows:
step S115: forming a quantum dot layer on the pixel region of each micro light emitting diode. As shown in fig. 4E, in each pixel region, according to whether the micro light emitting diode in each pixel region is red (R), green (G) or blue (B), a corresponding Quantum Dot (QD) is provided, so that the light emitting efficiency and color rendering property of the micro light emitting diode can be improved, and the overall performance of the micro light emitting diode is better.
Step S116: the quantum dot layer is cured. The solvent in the quantum dot layer 401-3-1 is removed by vacuum or heating, and finally ultraviolet or heat curing is performed for shaping. The curing of the quantum dot layer of fig. 4E can be completed.
The two different embodiments above form the light blocking layer of the present invention in a post-production manner. The thickness of the negative photoresist layer 30 may be 10 to 60 micrometers (μm). The distance between the black matrix and the micro light emitting diode may be set to be less than 1 micron, 3 microns, 5 microns, 15 microns, or between 3 microns and 15 microns.
For another embodiment of the present invention, each pixel region may also include three or six micro light emitting diodes.
In addition, the RGB color definition mode in the embodiment is not limited to the present invention. For micro-leds, CIE color definition, or other color definition (e.g., RG only) may be used. In the present invention, the technical point is that each pixel space of the micro light emitting diode after the macro transfer is defined by LDI technology in a post-process mode, and then the light blocking layer is manufactured by LDI technology. For the embodiment of adding the quantum dot layer, only B, i.e. Lan Guang LED can be used, while the light emission depends on the quantum dot. In this embodiment, since each pixel region includes three or six micro light emitting diodes, and since there is a light blocking layer disposed later (color interference between each pixel can be prevented), the micro light emitting diodes can be disposed at a closer distance. That is, the pitch between three or six micro light emitting diodes in "each pixel" may be set at a closer pitch, for example, 1-2 μm, or even lower, when the micro light emitting diodes are fabricated. Therefore, the invention can realize the special technical effects of the configuration and the manufacture of the micro light emitting diode with higher resolution.
As shown in the foregoing various embodiments, the micro light emitting diode display panel with a light blocking layer according to the present invention uses a physical virtual mask and a laser direct writing exposure technique to solve the problem of die skew of the micro light emitting diode during the mass transfer process, thereby realizing the special technical effects of high yield and low cost, and further realizing the special technical effects of light blocking and defining the pixel range of the quantum dot.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. A manufacturing method of a micro light emitting diode display panel with a light blocking layer is characterized by comprising the following steps:
performing optical image scanning and calculation on a substrate on which a plurality of micro light emitting diodes are manufactured, and generating a physical virtual photomask, wherein each micro light emitting diode is defined as a pixel area by the physical virtual photomask;
forming a negative photoresist layer on the substrate, wherein the thickness of the negative photoresist layer is greater than that of each micro light emitting diode;
performing a laser direct writing exposure process on the negative photoresist layer by using the physical virtual photomask, and removing the negative photoresist layer defined in each pixel region; a kind of electronic device with high-pressure air-conditioning system
Curing the negative photoresist layer which is not removed to form a black matrix structure.
2. The method of claim 1, wherein the negative photoresist layer has a thickness of 10-60 μm.
3. The method of claim 1, wherein the physical dummy mask defines the pixel region according to a physical photograph of each of the micro light emitting diodes, and when the micro light emitting diodes in each of the micro light emitting diodes are tilted, the pixel region is correspondingly generated to a tilted pixel region.
4. The method of claim 3, wherein the black matrix structure and the micro light emitting diode form a space of less than 1 μm.
5. The method of claim 3, wherein the black matrix structure and the micro light emitting diode form a space of less than 3 μm.
6. The method of claim 1, wherein the black matrix structure and the micro light emitting diode form a space of less than 5 μm.
7. The method of claim 1, wherein each pixel region comprises one micro light emitting diode.
8. The method of claim 1, wherein each pixel region comprises three micro light emitting diodes.
9. The method of claim 1, wherein each pixel region comprises six micro light emitting diodes.
10. The method for fabricating a micro light emitting diode display panel with a light blocking layer according to claim 1, further comprising:
forming a quantum dot layer on the pixel region of each micro light emitting diode; a kind of electronic device with high-pressure air-conditioning system
The quantum dot layer is cured.
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