CN116926504A - Precursor output device and atomic layer deposition equipment - Google Patents
Precursor output device and atomic layer deposition equipment Download PDFInfo
- Publication number
- CN116926504A CN116926504A CN202311205372.3A CN202311205372A CN116926504A CN 116926504 A CN116926504 A CN 116926504A CN 202311205372 A CN202311205372 A CN 202311205372A CN 116926504 A CN116926504 A CN 116926504A
- Authority
- CN
- China
- Prior art keywords
- distribution
- precursor
- gas
- distribution chamber
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 164
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 181
- 238000006243 chemical reaction Methods 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 103
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 239000011261 inert gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The application relates to a precursor output device and atomic layer deposition equipment. The precursor output device comprises a first distribution unit and a second distribution unit, and when the air pressure in the second distribution cavity of the second distribution unit is not at a preset value, the precursor gas is injected into the second distribution cavity through the first distribution unit until the air pressure of the precursor gas in the second distribution cavity reaches the first preset value. In this way, in the deposition process, no matter in which pulse stage, only when the air pressure in the second distribution cavity meets the requirement, the main pipeline is conducted, and precursor gas is introduced into the reaction cavity through the main pipeline to perform film deposition, so that the air pressure stability of the precursor gas output to the reaction cavity in each pulse stage can be ensured, the thickness and the component uniformity of each deposited film can be effectively improved, and the film forming quality is further ensured.
Description
Technical Field
The application relates to the technical field of atomic layer deposition, in particular to a precursor output device and atomic layer deposition equipment.
Background
Atomic layer deposition is an advanced atomic layer thin film deposition technology based on chemical vapor deposition, and the ordered surface self-saturation reaction can effectively realize the layer-by-layer deposition of substances on the surface of a substrate with a complex three-dimensional morphology in a single atomic film mode, so that the thickness and the composition of the thin film can be accurately controlled.
In the coating process, two gas phase precursor pulses are typically sequentially introduced into the reactor and chemically reacted on the substrate surface.
In the related art, when the precursor output device outputs the precursor gas, the output stability of the precursor output device is low, so that the film forming quality is affected.
Disclosure of Invention
Accordingly, it is necessary to provide a precursor output apparatus for solving the problem of poor film formation quality in the conventional precursor output apparatus.
A precursor output apparatus for use in an atomic layer deposition apparatus, the precursor output apparatus comprising:
a first distribution unit including a first distribution chamber for containing a precursor gas;
a second distribution unit including a second distribution chamber for containing the precursor gas; a first air outlet pipeline is connected between the second distribution cavity and the first distribution cavity;
one end of the main pipeline is connected with the second distribution cavity, and the other end of the main pipeline is connected with the reaction cavity;
when the air pressure value in the second distribution cavity reaches a first preset value, the main pipeline is connected, the first air outlet pipeline is disconnected, and the second distribution cavity can be used for introducing the precursor gas into the reaction cavity;
when the air pressure value in the second distribution cavity is smaller than the first preset value, the main pipeline is disconnected, the first air outlet pipeline is connected, and the first distribution cavity can inject the precursor gas into the second distribution cavity until the air pressure value in the second distribution cavity reaches the first preset value.
In one embodiment, when the pulse time of the precursor gas is greater than the pulse interval time of the precursor gas, the second distribution units include a plurality of the second distribution units, and the plurality of the second distribution units are arranged at intervals;
the first air outlet pipeline is connected between the second distribution cavity and the first distribution cavity of each second distribution unit.
In one embodiment, the precursor output device further includes a first air inlet pipe, and the first air inlet pipe can be communicated with the first distribution cavity so as to input gas into the first distribution cavity and press the precursor gas in the first distribution cavity into the second distribution cavity.
In one embodiment, the precursor output device further includes a second gas inlet pipe, where the second gas inlet pipe can be communicated with the second distribution chamber, so as to input gas into the second distribution chamber, and press the precursor gas in the second distribution chamber into the main pipe.
In one embodiment, the precursor output device further comprises a gas injection unit in communication with the first and/or second inlet lines.
In one embodiment, the first air outlet pipeline is provided with a first air outlet valve for controlling on/off; and/or
The main pipeline is provided with a main valve for controlling on or off; and/or
The first air inlet pipeline is provided with a first air inlet valve for controlling on/off; and/or
The second air inlet pipeline is provided with a second air inlet valve for controlling on/off.
In one embodiment, the precursor output device further includes a first air pressure detecting member, where the first air pressure detecting member is configured to detect an air pressure value in the second distribution chamber; and/or
The precursor output device further comprises a first temperature detection piece, wherein the first temperature detection piece is used for detecting the temperature value in the second distribution cavity.
In one embodiment, the precursor output device further comprises a first temperature control unit connected to the first distribution chamber, wherein the first temperature control unit is used for heating the first distribution chamber so as to enable the temperature in the first distribution chamber to be at a second preset value; and/or
The precursor output device further comprises a second temperature control unit connected to the second distribution cavity, and the second temperature control unit is used for heating the second distribution cavity so that the temperature in the second distribution cavity is at a third preset value.
In one embodiment, the volume of the second dispensing chamber is less than the volume of the first dispensing chamber.
An atomic layer deposition apparatus includes a reaction chamber and a precursor output device as described above, the precursor output device being capable of introducing a precursor gas into the reaction chamber.
The precursor output device comprises a first distribution unit and a second distribution unit, and when the air pressure in the second distribution cavity of the second distribution unit is smaller than a first preset value, namely is not at the preset value, the precursor gas is injected into the second distribution cavity through the first distribution unit until the air pressure of the precursor gas in the second distribution cavity reaches the first preset value. In this way, in the deposition process, no matter in which pulse stage, only when the air pressure in the second distribution cavity meets the requirement, the main pipeline is conducted, and precursor gas is introduced into the reaction cavity through the main pipeline to perform film deposition, so that the air pressure stability of the precursor gas output to the reaction cavity in each pulse stage can be ensured, the thickness and the component uniformity of each deposited film can be effectively improved, and the film forming quality is further ensured.
Drawings
Fig. 1 is a schematic diagram of a precursor output apparatus according to a first embodiment of the present application.
Fig. 2 is a schematic diagram of a precursor output apparatus according to a second embodiment of the present application.
Fig. 3 is a schematic pulse cycle diagram of an atomic layer deposition process according to a first embodiment of the present application.
Fig. 4 is a schematic pulse cycle diagram of an atomic layer deposition process according to a second embodiment of the present application.
Fig. 5 is a schematic pulse cycle diagram of an atomic layer deposition process according to a third embodiment of the present application.
Reference numerals: 10. precursor output means; 110. a first distribution unit; 111. a first dispensing chamber; 120. a first temperature control unit; 210. a second distribution unit; 211. a second distribution chamber; 220. a second temperature control unit; 230. a first air pressure detecting member; 310. a first outlet line; 311. a first outlet valve; 312. a second outlet valve; 320. a first air intake line; 321. a first air intake valve; 330. a second air intake line; 331. a second air intake valve; 410. a main pipeline; 411. a main valve; 510. a gas injection unit; 610. and a controller.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if any, these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are used herein with respect to the orientation or positional relationship shown in the drawings, these terms refer to the orientation or positional relationship for convenience of description and simplicity of description only, and do not indicate or imply that the apparatus or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
In a typical atomic layer deposition process, a precursor storage bottle is generally used, a first precursor gas is first introduced into a substrate to perform adsorption or chemical reaction with the surface of the substrate, and then the remaining gas is purged with an inert gas. Then, the second precursor gas is introduced to react with the first precursor gas adsorbed on the surface of the substrate to generate the atomic layer film. The excess gas is then flushed away again with inert gas. The cycle is repeated until the desired film thickness is reached.
The total amount of the precursor in the precursor storage bottle is continuously reduced along with the increase of the using time, so that the saturated vapor pressure of the precursor in the precursor storage bottle is gradually reduced, the diffusion efficiency and the total output amount of the precursor input into the reaction cavity are continuously reduced, and finally key parameters such as the thickness, the components and the coverage rate of the deposited film are seriously deviated from targets, which greatly influences the film forming quality of some key films (such as a high dielectric constant insulating layer, a metal gate and the like) related to the atomic layer deposition process in the semiconductor chip manufacturing process, and causes a series of problems such as chip threshold voltage deviation, leakage current rising, reliability lowering and the like. The saturated vapor pressure is the pressure of vapor in equilibrium with a solid or liquid at a certain temperature under closed conditions. The same substance has different saturated vapor pressures at different temperatures and increases with increasing temperature. In the related art, the vapor pressure of the precursor is continuously increased due to the temperature rise, which causes thermal decomposition of the precursor due to the excessively high temperature, so that the quality of the deposited film cannot be improved well.
Based on the above, an embodiment of the present application provides a precursor output device, which aims to improve the thickness and the uniformity of components of each deposited layer of thin film, thereby ensuring the film forming quality. The precursor output apparatus according to an embodiment of the present application will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a precursor output apparatus according to an embodiment of the present application, and referring to fig. 1, a precursor output apparatus 10 applied to an atomic layer deposition apparatus according to the present embodiment includes a first distribution unit 110, a second distribution unit 210, and a main pipeline 410. The first distribution unit 110 includes a first distribution chamber 111 for containing a precursor gas; the second distribution unit 210 includes a second distribution chamber 211 for containing a precursor gas; a first air outlet pipeline 310 is connected between the second distribution cavity 211 and the first distribution cavity 111; one end of the main pipe 410 is connected to the second distribution chamber 211, and the other end of the main pipe 410 is connected to the reaction chamber. When the air pressure value in the second distribution chamber 211 reaches the first preset value, the main pipeline 410 is turned on, the first air outlet pipeline 310 is turned off, and the second distribution chamber 211 can introduce the precursor gas into the reaction chamber. When the air pressure value in the second distribution chamber 211 is smaller than the first preset value, the main pipeline 410 is disconnected, the first air outlet pipeline 310 is connected, and the first distribution chamber 111 can inject the precursor gas into the second distribution chamber 211 until the air pressure value in the second distribution chamber 211 reaches the first preset value.
Specifically, when the gas pressure in the second distribution chamber 211 of the second distribution unit 210 is less than the first preset value, that is, not at the preset value, the precursor output device 10 is in the preparation stage, and the precursor gas is injected into the second distribution chamber 211 through the first distribution unit 110 until the gas pressure of the precursor gas in the second distribution chamber 211 reaches the target value, that is, the first preset value. When the gas pressure in the second distribution chamber 211 reaches the first preset value, it means that the total amount of the precursor gas injected into the second distribution chamber 211 has reached the dose required by a single pulse in the atomic layer deposition process, and the precursor output device is in the pulse stage, i.e. the precursor gas is introduced into the reaction chamber. Thus, in the deposition process, no matter in which pulse stage, only when the air pressure in the second distribution chamber 211 meets the requirement, the precursor gas is introduced into the reaction chamber through the main pipeline 410, so that the air pressure stability of the precursor gas output to the reaction chamber in each pulse stage can be ensured, the thickness and the uniformity of components of the deposited films can be effectively improved, and the film forming quality can be further ensured. The first preset value may be a range value, and the specific parameter value is selected and set according to the type of the film actually formed.
It will be appreciated that as shown in fig. 1, the precursor output apparatus 10 further includes a controller 610, and the controller 610 controls the connection or disconnection of the first outlet pipe 310 and the main pipe 410 through a control line.
Specifically, as shown in fig. 3, if a precursor gas with a high saturated vapor pressure is used in the atomic layer deposition process, the pulse time of the precursor gas tends to be short, i.e., the pulse time TA1 of the precursor gas a is smaller than the pulse interval time TA2 of the precursor gas a, and the pulse time TB1 of the precursor gas B is smaller than the pulse interval time TB2 of the precursor gas B. Taking the precursor gas a as an example, the pulse interval time TA2 of the precursor gas a is the sum of the purge time of the inert gas, the pulse time of the precursor gas B, and the time of the inert gas secondary purge, and the pulse interval time TB2 of the precursor gas B is the same. It can be seen that the single pulse time of the precursor gas a can be regarded as the time required for the air pressure value in the second distribution chamber 211 to reach the requirement, and obviously the time is smaller than the pulse interval time, in this case, the production efficiency and the process quality can be improved at the same time only by installing one second distribution unit 210 on the original output device of the precursor gas a and the precursor gas B.
As shown in fig. 2, in one embodiment, when the pulse time T1 of the precursor gas is greater than the pulse interval time T2 of the precursor gas, the second distribution units 210 include a plurality of second distribution units 210, and the plurality of second distribution units 210 are disposed at intervals; a first air outlet pipe 310 is connected between the second distribution chamber 211 and the first distribution chamber 111 of each second distribution unit 210.
That is, if a precursor gas with a lower saturated vapor pressure is used in the atomic layer deposition process, the pulse time of the precursor gas tends to be longer, i.e., the pulse time TA1 of the precursor gas a is greater than the precursor pulse interval time TA2, as shown in fig. 4. In this case, if only one set of the second distribution units 210 is installed, the precursor output device for outputting the precursor gas a may cause the gas pressure in the second distribution chamber 211 to have not reached the first preset value after the next pulse of the precursor gas a. Therefore, by installing a plurality of second distribution units 210 in parallel, when one of the second distribution units 210 satisfying the requirement is in the pulse phase, the other second distribution units 210 may be in the preparation phase (i.e., the process of introducing the precursor gas into the second distribution chamber 211 by the first distribution chamber 111). When the air pressure in the second distribution chamber 211 reaches the first preset value, the air pressure is fed back to the controller 610. The controller 610 selects a cell having completed the preparation phase from the second distribution unit 210 to enter the pulse phase, i.e., outputs the precursor gas into the reaction chamber. By adopting the arrangement, the problems that the precursor gas is difficult to maintain continuous and stable output quantity, and the thickness and the uniformity of components of the atomic layer deposition film are affected can be effectively solved.
As shown in fig. 5, for some complex atomic layer deposition processes, such as those of InGaZnO thin films, four different precursors are required simultaneously. Because the saturated vapor pressure of the In source precursor is low, the pulse time required for outputting the precursor is often more than 10-15 times of the pulse time of each of the Zn source precursor, the Ga source precursor and the O source precursor. Since In atoms In InGaZnO films are typically the main component, the number of In source precursor pulses per main cycle of the atomic layer deposition process of InGaZnO films tends to be several times that of Zn source precursor and Ga source precursor. Therefore, the sum of the pulse time of the In source precursor can even account for more than 70% of the time required by the whole process In the atomic layer deposition process of the whole InGaZnO film. Therefore, for a complex atomic layer deposition process for depositing InGaZnO thin films, it is possible to choose to preferentially equip the output device of the In source precursor with a plurality of second distribution units 210 on the premise of reducing the cost. The method not only can effectively improve the distribution uniformity of In atoms with the largest element proportion In the film, but also can greatly shorten the time required by each main cycle In the process, thereby obviously improving the yield.
As shown in fig. 1, in one embodiment, the precursor output apparatus further includes a first gas inlet pipe 320, where the first gas inlet pipe 320 can be in communication with the first distribution chamber 111 to input a gas into the first distribution chamber 111 and press the precursor gas in the first distribution chamber 111 into the second distribution chamber 211. By providing the first gas inlet pipe 320 and introducing inert gas or the like into the first distribution chamber 111 through the first gas inlet pipe 320, the precursor gas in the first distribution chamber 111 is pressed into the second distribution chamber 211 by the pressure difference.
As shown in fig. 1, in one embodiment, the precursor output apparatus further includes a second gas inlet pipe 330, and the second gas inlet pipe 330 can be in communication with the second distribution chamber 211 to input a gas into the second distribution chamber 211 and press the precursor gas in the second distribution chamber 211 into the main pipe 410. Specifically, by providing the second air inlet pipe 330 and introducing inert gas or the like into the second distribution chamber 211 through the second air inlet pipe 330, the precursor gas in the second distribution chamber 211 is pressed into the main pipe 410 under the action of the pressure difference, and enters the reaction chamber through the main pipe 410, so as to perform thin film deposition.
As shown in fig. 1, in one embodiment, the precursor output apparatus further includes a gas injection unit 510, and the gas injection unit 510 communicates with the first and second gas inlet lines 320 and 330. Specifically, when the precursor output device is in the preparation stage, the gas injection unit 510 injects inert gas into the first distribution chamber 111 through the first gas inlet pipe 320, and the inert gas carries the precursor gas in the first distribution chamber 111 into the second distribution chamber 211 until the gas pressure in the second distribution chamber 211 reaches the first preset value, and then the precursor output device is in the pulse stage. At this time, the gas injection unit 510 injects the inert gas into the second distribution chamber 211 through the second gas inlet pipe 330, and the inert gas carries the precursor gas in the second distribution chamber 211 into the main pipe 410, and finally into the reaction chamber. The inert gas may be nitrogen, helium, neon, argon, krypton, xenon or radon.
As shown in fig. 1, in one embodiment, the first air outlet pipe 310 is provided with a first air outlet valve 311 for controlling on or off; the main pipe 410 is provided with a main valve 411 for controlling on or off; the first air inlet pipeline 320 is provided with a first air inlet valve 321 for controlling on or off; the second intake pipe 330 is provided with a second intake valve 331 for controlling on or off. Further, the first outlet pipe 310 may be further provided with a second outlet valve 312 for controlling on or off. As such, the first outlet valve 311 and the first inlet valve 321 may be integrated on the first distribution unit; the second outlet valve 312 and the second inlet valve 331 can be integrated on the second distribution unit, which is more convenient to use. The first air outlet valve 311, the second air outlet valve 312, the main valve 411, the first air inlet valve 321 and the second air inlet valve 331 are all in communication connection with the controller 610, so as to control the connection or disconnection of the corresponding pipelines in time, and the response is more accurate and reliable. Each valve may specifically be a solenoid valve.
As shown in fig. 1, in one embodiment, the precursor output apparatus further includes a first air pressure detecting member 230, where the first air pressure detecting member 230 is configured to detect the air pressure value in the second distribution chamber 211. The first air pressure detecting member 230 is communicatively connected to the controller 610, and the first air pressure detecting member 230 may be a high-precision pressure sensor, and the pressure measuring precision needs to be at least 0.01Torr. The air pressure in the second distribution chamber 211 is monitored in real time by the pressure sensor and fed back to the controller 610. When the air pressure in the second distribution cavity 211 does not reach the first preset value, the precursor is introduced into the second distribution cavity 211 through the first distribution cavity 111, and when the air pressure in the second distribution cavity 211 reaches the first preset value, the total amount of the precursor gas injected into the second distribution cavity 211 reaches the dosage required by a single pulse in the atomic layer deposition process, so that the air pressure stability of the precursor gas output to the reaction cavity in each pulse stage is ensured, the thickness and the uniformity of components of each deposited film are effectively improved, and the film forming quality is further ensured.
As shown in fig. 1, further, the precursor output apparatus further includes a first temperature detecting member for detecting a temperature value in the second distribution chamber 211. The temperature in the second distribution chamber 211 is detected by the first temperature detecting member, so that the precursor gas in the second distribution chamber 211 is ensured not to be thermally decomposed due to the overhigh temperature.
As shown in fig. 1, in one embodiment, the precursor output apparatus further includes a first temperature control unit 120 connected to the first distribution chamber 111, where the first temperature control unit 120 is configured to heat the first distribution chamber 111 so that the temperature in the first distribution chamber 111 is at a second preset value. Further, the precursor output apparatus further includes a second temperature control unit 220 connected to the second distribution chamber 211, where the second temperature control unit 220 is configured to heat the second distribution chamber 211 so that the temperature in the second distribution chamber 211 is at a third preset value. The first temperature control unit 120 and the second temperature control unit 220 may be heating sheets or heating jackets.
The second preset value corresponding to the first temperature control unit 120 and the third preset value corresponding to the second temperature control unit 220 are determined according to the type of the precursor gas actually introduced. Specifically, the first temperature control unit 120 and the second temperature control unit 220 are both communicatively coupled to the controller 610. The temperatures in the first and second distribution chambers 111 and 211 are respectively controlled to be stabilized at the second and third preset values by the first and second temperature control units 120 and 220 to ensure that the precursor gases in the first and second distribution chambers 111 and 211 are maintained in a gas phase state while thermal decomposition does not occur due to excessive temperatures.
In one embodiment, as shown in fig. 1, the volume of the second distribution chamber 211 is less than the volume of the first distribution chamber 111. Since the volume of the second distribution chamber 211 only needs to store the amount of precursor gas required for a single pulse, by setting the volume of the second distribution chamber 211 to be much smaller than the volume of the first distribution chamber 111, the output efficiency and speed of the precursor gas of the second distribution chamber 211 are much higher than those of the precursor gas directly output from the first distribution chamber 111. Therefore, the pulse time of the precursor gas can be shortened, and the production efficiency is improved.
Further, as shown in fig. 1, an embodiment of the present application further provides an atomic layer deposition apparatus, which includes a reaction chamber and the precursor output device, where the precursor output device is capable of introducing a precursor gas into the reaction chamber. It will be appreciated that the atomic layer deposition apparatus includes a plurality of sets of precursor output means, each set of precursor output means for inputting a corresponding precursor gas.
Specifically, the atomic layer deposition apparatus injects the precursor gas into the second distribution chamber 211 through the first distribution unit 110 until the gas pressure of the precursor gas in the second distribution chamber 211 reaches a target value when the gas pressure in the second distribution chamber 211 of the second distribution unit 210 is not at a preset value during the deposition of the thin film. Thus, in the deposition process, no matter in which pulse stage, only when the air pressure in the second distribution chamber 211 meets the requirement, the precursor gas is introduced into the reaction chamber through the main pipeline 410, so that the air pressure stability of the precursor gas output to the reaction chamber in each pulse stage can be ensured, the thickness and the uniformity of components of the deposited films can be effectively improved, and the film forming quality can be further ensured.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A precursor output device for use in an atomic layer deposition apparatus, the precursor output device comprising:
a first distribution unit (110) comprising a first distribution chamber (111) for containing a precursor gas;
a second distribution unit (210) comprising a second distribution chamber (211) for containing the precursor gas; a first air outlet pipeline (310) is connected between the second distribution cavity (211) and the first distribution cavity (111);
a main pipe (410) having one end connected to the second distribution chamber (211) and the other end connected to the reaction chamber;
when the air pressure value in the second distribution cavity (211) reaches a first preset value, the main pipeline (410) is connected, the first air outlet pipeline (310) is disconnected, and the second distribution cavity (211) can be used for introducing the precursor gas into the reaction cavity;
when the air pressure value in the second distribution cavity (211) is smaller than the first preset value, the main pipeline (410) is disconnected, the first air outlet pipeline (310) is connected, and the first distribution cavity (111) can inject the precursor gas into the second distribution cavity (211) until the air pressure value in the second distribution cavity (211) reaches the first preset value;
when the pulse time of the precursor gas is longer than the pulse interval time of the precursor gas, the second distribution units (210) comprise a plurality of second distribution units (210) which are arranged at intervals;
the first air outlet pipeline (310) is connected between the second distribution cavity (211) and the first distribution cavity (111) of each second distribution unit (210).
2. The precursor delivery device according to claim 1, further comprising a first gas inlet line (320), the first gas inlet line (320) being capable of communicating with the first distribution chamber (111) to input a gas into the first distribution chamber (111) and to force the precursor gas within the first distribution chamber (111) into the second distribution chamber (211).
3. The precursor delivery device according to claim 2, further comprising a second gas inlet line (330), the second gas inlet line (330) being capable of communicating with the second distribution chamber (211) to input a gas into the second distribution chamber (211) and to force the precursor gas in the second distribution chamber (211) into the main line (410).
4. A precursor output according to claim 3, further comprising a gas injection unit (510), the gas injection unit (510) being in communication with the first inlet line (320) and/or the second inlet line (330).
5. A precursor output device according to claim 3, wherein the first outlet line (310) is provided with a first outlet valve (311) for controlling on or off; and/or
The main pipeline (410) is provided with a main valve (411) for controlling on/off; and/or
The first air inlet pipeline (320) is provided with a first air inlet valve (321) for controlling on/off; and/or
The second air inlet pipeline (330) is provided with a second air inlet valve (331) for controlling on or off.
6. The precursor delivery device according to claim 1, further comprising a first air pressure detector (230) for detecting an air pressure value within the second distribution chamber (211).
7. The precursor output device according to claim 1, further comprising a first temperature detection member for detecting a temperature value within the second distribution chamber (211).
8. The precursor output device according to claim 1, further comprising a first temperature control unit (120) connected to the first distribution chamber (111), the first temperature control unit (120) being configured to heat the first distribution chamber (111) such that the temperature within the first distribution chamber (111) is at a second preset value; and/or
The precursor output device further comprises a second temperature control unit (220) connected to the second distribution cavity (211), wherein the second temperature control unit (220) is used for heating the second distribution cavity (211) so as to enable the temperature in the second distribution cavity (211) to be at a third preset value.
9. The precursor output device according to claim 1, wherein the volume of the second distribution chamber (211) is smaller than the volume of the first distribution chamber (111).
10. An atomic layer deposition apparatus comprising a reaction chamber and a precursor output device according to any one of claims 1to 9, the precursor output device being capable of introducing a precursor gas into the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311205372.3A CN116926504A (en) | 2023-09-19 | 2023-09-19 | Precursor output device and atomic layer deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311205372.3A CN116926504A (en) | 2023-09-19 | 2023-09-19 | Precursor output device and atomic layer deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116926504A true CN116926504A (en) | 2023-10-24 |
Family
ID=88384677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311205372.3A Pending CN116926504A (en) | 2023-09-19 | 2023-09-19 | Precursor output device and atomic layer deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116926504A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090266296A1 (en) * | 2006-03-30 | 2009-10-29 | Hiroyuki Tachibana | Atomic layer growing apparatus |
| CN101818334A (en) * | 2002-01-17 | 2010-09-01 | 松德沃技术公司 | ALD apparatus and method |
| US20160208382A1 (en) * | 2015-01-21 | 2016-07-21 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus |
| CN211260360U (en) * | 2019-11-06 | 2020-08-14 | 信纮科技股份有限公司 | Gas mixing output system |
| CN111560605A (en) * | 2020-06-18 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Precursor conveying device and precursor conveying method of atomic layer deposition equipment |
| CN113416945A (en) * | 2021-06-24 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment |
| US20220251704A1 (en) * | 2021-01-27 | 2022-08-11 | Eugenus, Inc. | Precursor delivery system and method for cyclic deposition |
| TW202244309A (en) * | 2021-05-05 | 2022-11-16 | 馗鼎奈米科技股份有限公司 | Double valve gas supply system |
| TW202244310A (en) * | 2021-05-05 | 2022-11-16 | 馗鼎奈米科技股份有限公司 | Gas supply method |
| US20230042784A1 (en) * | 2021-08-06 | 2023-02-09 | Asm Ip Holding B.V. | Precursor delivery system and method therefor |
| CN116180052A (en) * | 2023-02-28 | 2023-05-30 | 华中科技大学 | Quantitative output equipment and precursor supply method |
-
2023
- 2023-09-19 CN CN202311205372.3A patent/CN116926504A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818334A (en) * | 2002-01-17 | 2010-09-01 | 松德沃技术公司 | ALD apparatus and method |
| US20090266296A1 (en) * | 2006-03-30 | 2009-10-29 | Hiroyuki Tachibana | Atomic layer growing apparatus |
| US20160208382A1 (en) * | 2015-01-21 | 2016-07-21 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus |
| CN211260360U (en) * | 2019-11-06 | 2020-08-14 | 信纮科技股份有限公司 | Gas mixing output system |
| CN111560605A (en) * | 2020-06-18 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Precursor conveying device and precursor conveying method of atomic layer deposition equipment |
| US20220251704A1 (en) * | 2021-01-27 | 2022-08-11 | Eugenus, Inc. | Precursor delivery system and method for cyclic deposition |
| TW202244309A (en) * | 2021-05-05 | 2022-11-16 | 馗鼎奈米科技股份有限公司 | Double valve gas supply system |
| TW202244310A (en) * | 2021-05-05 | 2022-11-16 | 馗鼎奈米科技股份有限公司 | Gas supply method |
| CN113416945A (en) * | 2021-06-24 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment |
| US20230042784A1 (en) * | 2021-08-06 | 2023-02-09 | Asm Ip Holding B.V. | Precursor delivery system and method therefor |
| CN115928046A (en) * | 2021-08-06 | 2023-04-07 | Asm Ip私人控股有限公司 | Precursor delivery system and method |
| CN116180052A (en) * | 2023-02-28 | 2023-05-30 | 华中科技大学 | Quantitative output equipment and precursor supply method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8790464B2 (en) | Control for and method of pulsed gas delivery | |
| US7628861B2 (en) | Pulsed mass flow delivery system and method | |
| US10385457B2 (en) | Raw material gas supply apparatus, raw material gas supply method and storage medium | |
| US7910177B2 (en) | Sequential pulse deposition | |
| CN112051013A (en) | Method of using a gas phase reactor system including analyzing exhaust gases | |
| US5520969A (en) | Method for in-situ liquid flow rate estimation and verification | |
| US7953512B2 (en) | Substrate processing system, control method for substrate processing apparatus and program stored on medium | |
| US11236425B2 (en) | Method of processing substrate | |
| US20060035470A1 (en) | Method for manufaturing semiconductor device and substrate processing system | |
| EP3458626B1 (en) | Sublimated gas supply system | |
| KR20010007467A (en) | Metal organic chemical vapor deposition method and apparatus | |
| TW201321547A (en) | Feedstock gasification and supply device | |
| US20050103264A1 (en) | Atomic layer deposition process and apparatus | |
| US10256101B2 (en) | Raw material gas supply apparatus, raw material gas supply method and storage medium | |
| CN116926504A (en) | Precursor output device and atomic layer deposition equipment | |
| US7029928B2 (en) | Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber | |
| JPS61229319A (en) | Thin film forming method | |
| JP4213331B2 (en) | Metal organic vapor phase growth method and metal organic vapor phase growth apparatus | |
| US6204199B1 (en) | Method for producing a semiconductor device | |
| KR101366385B1 (en) | Atomic Layer Deposition System | |
| CN115323360B (en) | Precursor output system and precursor output method | |
| US20240044689A1 (en) | Pressure-based sensor system for precursor level measurement and method therefor | |
| KR102623223B1 (en) | Gas furnishing device for homogeneous gas furnishing into the chamber of deposition equipment | |
| US20230094500A1 (en) | Gas supply system, substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium | |
| Morishita et al. | Gas flow characteristics in a plasma process chamber and proposal of new pulse-controlled gas injection method using interference matrix operation for rapid stabilization of gas pressure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |