CN116926492B - Clamp table for preparing nanocrystalline film, preparation device and preparation method - Google Patents
Clamp table for preparing nanocrystalline film, preparation device and preparation method Download PDFInfo
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- CN116926492B CN116926492B CN202311185988.9A CN202311185988A CN116926492B CN 116926492 B CN116926492 B CN 116926492B CN 202311185988 A CN202311185988 A CN 202311185988A CN 116926492 B CN116926492 B CN 116926492B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 177
- 239000011521 glass Substances 0.000 claims abstract description 111
- 238000004140 cleaning Methods 0.000 claims abstract description 42
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002159 nanocrystal Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 41
- 210000000078 claw Anatomy 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 24
- 238000003825 pressing Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 230000002457 bidirectional effect Effects 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of nano crystal film preparation, in particular to a clamp table for preparing a nano crystal film, a preparation device and a preparation method, wherein the clamp table comprises a substrate, a bearing mechanism for adsorbing and fixing a glass lining, and two groups of wire clamping mechanisms capable of clamping two ends of a conductive wire and stretching the two ends of the conductive wire on the bearing mechanism; the fixture table can move in the working range where the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are located. According to the invention, the glass lining is placed on the fixture table, the conducting wire is embedded after the glass lining is grooved through the grooving mechanism, the nanocrystalline film is sputtered on the glass lining through the magnetron sputtering mechanism after the plasma cleaning mechanism is cleaned, and the novel preparation device and the preparation method for preparing the nanocrystalline film are provided, so that the operation process is simple, the efficiency is high, and the processing of batch products can be realized.
Description
Technical Field
The invention relates to the technical field of nano crystal film preparation, in particular to a clamp table for preparing a nano crystal film, a preparation device and a preparation method.
Background
Nanocrystalline refers to crystalline material on a nano-scale, or nanoparticles having a crystalline structure. Nanocrystals have significant research value. The electrical and thermodynamic properties of nanocrystals exhibit a strong dimensional dependence so that these properties can be controlled by careful manufacturing processes. The nanocrystalline film is a film which is composed of nanocrystalline particles and has a size in a range of 2-10 nm, and due to the nanoscale property, the nanocrystalline film has a plurality of unique properties, so that the nanocrystalline film has wide application prospects in the fields of life science, information, environment, energy sources, catalysis and the like.
Thermoelectric materials can realize conversion of heat energy and electric energy, and the thermoelectric performance of the device depends on the quality factor. The thermoelectric thin film device can realize lower size, and the advantage makes the thermoelectric thin film device more suitable for the existing microelectronic packaging technology, and simultaneously, the fixed-point cooling and heating of the microelectronic processor are easier to realize; thus, thermoelectric thin film devices have potential applications in the microelectronics field.
To date, high performance inorganic thermoelectric films are usually obtained by high vacuum deposition technology or chemical vapor deposition method, for example, chinese patent CN102867906a discloses a method for electrochemically preparing thermoelectric films by using seed layers, which first prepares seed layers with nano-scale thickness on glass liners by means of molecular beam epitaxy, magnetron sputtering and the like, and then grows thermoelectric film materials by electrochemical method, wherein the film thickness can reach micrometer level. However, such methods generally have the problem of complex technical requirements, which not only results in excessive cost, but also cannot process batch products.
Therefore, it is very necessary to design and develop a device and a method for preparing a nanocrystalline thin film, which are simple in process, easy to operate and capable of realizing batch product processing.
Disclosure of Invention
Aiming at the technical problems that the prior thermoelectric film has complex technical requirements and high cost and cannot realize the processing of batch products, the clamp table, the preparation device and the preparation method for preparing the nanocrystalline film, which have simple process, are easy to operate and can realize the processing of batch products, are provided.
In order to solve the problems in the prior art, the technical scheme provided by the invention is as follows: the clamp table for preparing the nanocrystalline thin film comprises a substrate, a bearing mechanism for adsorbing and fixing a glass lining, and two groups of wire clamping mechanisms capable of clamping and stretching two ends of a conductive wire on the bearing mechanism, wherein the two groups of wire clamping mechanisms are respectively positioned on two sides of the bearing mechanism and are both arranged on the substrate; the bearing mechanism comprises a fixed seat, a sliding seat, a one-way valve, a supporting plate and a first spring, wherein the fixed seat is fixedly arranged on a substrate, the sliding seat is coaxially arranged on the fixed seat in a sliding manner, the first spring is coaxially arranged between the sliding seat and the fixed seat, a first air passage penetrating through the sliding seat vertically is arranged in the sliding seat, a second air passage penetrating through the sliding seat vertically is arranged in the fixed seat, the first air passage is communicated with the second air passage, the one-way valve is arranged in the second air passage, the supporting plate is provided with a connecting port, the top end of the sliding seat is connected with the connecting port, and a glass lining is arranged on the supporting plate.
The clamp table disclosed by the invention can automatically adsorb and fix the glass lining through the bearing mechanism, is simple and convenient to fix the glass lining, can effectively ensure that the glass lining cannot shift in the processes of post slotting, wire embedding, cleaning and sputtering, and can clamp and stretch the two ends of the conductive wire on the glass lining through the two groups of wire clamping mechanisms, so that the glass lining and the conductive wire can be firmly fixed on the clamp table, the accuracy of subsequent operation is ensured, and the mass production is facilitated.
Preferably, the fixing seat comprises a seat body fixedly arranged on the base plate and a cylinder body connected to the seat body, and the sliding seat is coaxially and slidably arranged in the cylinder body; a limiting structure for preventing the sliding seat from falling off is arranged at the top of the cylinder; the seat body is provided with a placement channel, and the one-way valve element is arranged in the placement channel.
Preferably, the limiting structure comprises a fixed ring and a limiting ring; the fixed ring is arranged at the bottom end of the outer circumferential surface of the sliding seat, the fixed ring is coaxially and slidably arranged in the cylinder body, the limiting ring is coaxially arranged at the top end of the inner circumferential surface of the cylinder body, and the limiting ring is in sliding fit with the outer circumferential surface of the sliding seat.
Preferably, the unidirectional valve element comprises a ball and a second spring, the top end of the placement channel is provided with a conical opening with the cross section gradually decreasing from bottom to top, the ball is slidably arranged in the conical opening, and the top end of the second spring is abutted against the bottom end of the ball; a limiting disc is coaxially arranged at the bottom of the seat body; the limiting plate is provided with an air port communicated with the placement channel, the top end of the air port of the limiting plate is provided with a positioning cylinder extending upwards, and the second spring is sleeved on the positioning cylinder.
Preferably, the top end of the first air passage is provided with a sealing ring coaxial with the first air passage.
Preferably, the wire clamping mechanism comprises a placement seat, a first polished rod, a second polished rod, a first toothed plate, a second toothed plate, a third spring and a fourth spring, wherein the placement seat is arranged on the substrate, the first polished rod and the second polished rod are horizontally arranged on the placement seat, the first toothed plate is slidingly arranged on the first polished rod, the second toothed plate is slidingly arranged on the second polished rod, the top end of the first toothed plate is provided with a first clamping groove at equal intervals, the top end of the second toothed plate is provided with a second clamping groove at equal intervals, the third spring is sleeved on the first polished rod, and the fourth spring is sleeved on the second polished rod, and the first clamping groove and the second clamping groove can elastically clamp the end part of the conductive wire.
Preferably, the wire clamping mechanism further comprises a height adjusting assembly, the height adjusting assembly comprises a first sliding block, a second sliding block, a two-way screw rod, a first connecting rod and a second connecting rod, the first sliding block and the second sliding block are oppositely or back to back arranged on the substrate in a sliding mode, the two-way screw rod is rotatably arranged on the substrate, the two-way screw rod is in threaded connection with the first sliding block and the second sliding block, two ends of the first connecting rod are respectively in rotary connection with the placement seat and the first sliding block, and two ends of the second connecting rod are respectively in rotary connection with the placement seat and the second sliding block.
The device for preparing the nanocrystalline thin film comprises the clamp table, a grooving mechanism for grooving the top end of the glass lining on the supporting mechanism and a wire embedding mechanism for embedding the conductive wire into the grooves, wherein the wire embedding mechanism can clamp the two ends of the conductive wire on the two groups of wire clamping mechanisms respectively.
Preferably, the slotting mechanism comprises a laser head, and a slot for embedding the conductive wire is formed in the top surface of the glass lining by laser.
Preferably, the wire embedding mechanism comprises a wire feeding claw, the wire feeding claw comprises a wide finger cylinder, a cylinder clamping jaw, a third toothed plate and a fourth toothed plate, the cylinder clamping jaw is arranged at the working end of the wide finger cylinder, the third toothed plate and the fourth toothed plate are fixedly arranged at the two working ends of the cylinder clamping jaw, the bottom end of the third toothed plate is provided with a third clamping groove at equal intervals, and the bottom end of the fourth toothed plate is provided with a fourth clamping groove at equal intervals.
Preferably, the wire feeding claw further comprises a fixing frame, a pressing plate, a fifth spring and a fixing rod, wherein the fixing frame is arranged on the wide finger cylinder, the bottom end of the fixing rod is fixedly arranged on the pressing plate, the fixing rod is in sliding connection with the fixing frame, a through hole for extending out of the top of the fixing rod is formed in the fixing frame, the top of the fixing rod is connected with a slip-stopping ring for preventing the fixing rod from slipping out of the through hole of the fixing frame, and the fifth spring is sleeved on the fixing rod and is located between the pressing plate and the fixing frame.
Preferably, a plasma cleaning mechanism for cleaning the embedded glass liner is also included.
Preferably, the magnetron sputtering device also comprises a magnetron sputtering mechanism for sputtering a layer of nanocrystalline film on the cleaned glass lining, and the nanocrystalline film is sputtered on the top end of the glass lining.
Preferably, the device further comprises a vacuum box, a clamp table, a slotting mechanism, a wire embedding mechanism, a plasma cleaning mechanism and a magnetron sputtering mechanism which are all positioned in the vacuum box, wherein the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are sequentially arranged in the vacuum box, the clamp table is arranged on a conveying belt, and the clamp table loaded with glass liners can be sequentially moved to the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism in a working interval for slotting, wire embedding, cleaning and sputtering the nanocrystalline film.
The preparation method of the nanocrystalline thin film, which uses the preparation device, comprises the following steps:
firstly, placing a glass lining on a clamp table, wherein a supporting mechanism can adsorb and fix the glass lining;
step two, the glass lining moves to a working area where the grooving mechanism is located along with the clamp table, the grooving mechanism is started, and the grooving mechanism performs grooving on the top surface of the glass lining;
and thirdly, moving the glass lining with the grooves to a working area where the wire embedding mechanism is located along with the clamp table, starting the wire embedding mechanism, enabling a wire feeding claw of the wire embedding mechanism to embed the conductive wires into the grooves of the glass lining, simultaneously conveying the end parts of the conductive wires to the wire clamping mechanism to be clamped and fixed, and cleaning the glass lining embedded with the conductive wires through the plasma cleaning mechanism and sputtering the nanocrystalline film through the magnetron sputtering mechanism to obtain the required nanocrystalline film.
Compared with the prior art, the invention has the beneficial effects that:
(1) The clamp table disclosed by the invention can automatically adsorb and fix the glass lining through the bearing mechanism, is simple and convenient for fixing the glass lining, can effectively ensure that the glass lining cannot shift in the subsequent slotting, wire embedding, cleaning and sputtering processes, can clamp and stretch the two ends of the conductive wire on the glass lining through the two groups of wire clamping mechanisms, ensures that the glass lining and the conductive wire can be firmly fixed on the clamp table, and is favorable for ensuring the accuracy of subsequent operation;
(2) According to the invention, after the wire feeding claw feeds the conductive wires to the wire clamping mechanism, the conductive wires can be firmly fixed through the cooperation of the first toothed plate and the second toothed plate, and a plurality of conductive wires can be clamped and fixed at the same time, so that the clamping efficiency is high, and the use is very convenient; in addition, the height adjusting component can also enable the placement seat to move upwards or downwards, so that the conductive wire can be conveniently embedded;
(3) According to the invention, the glass lining is placed on the fixture table, the conducting wire is embedded after the glass lining is grooved through the grooving mechanism, the nanocrystalline film is sputtered on the glass lining through the magnetron sputtering mechanism after the plasma cleaning mechanism is cleaned, a novel preparation device for preparing the nanocrystalline film and a preparation method thereof are provided, the whole operation process is simple, the efficiency is greatly improved, and the processing of batch products can be realized;
(4) The invention adopts a plasma cleaning mode to directly remove a layer of surface material, and is more effective for bottom cutting than other oil removing methods; the magnetron sputtering mechanism is efficient and reliable through magnetron sputtering of multiple target heads.
Drawings
FIG. 1 is a schematic view of the structure of a wire feeding claw in the apparatus for producing a nanocrystalline film according to the present invention when feeding a wire to a jig table;
FIG. 2 is a schematic view of a wire feeding claw in the apparatus for producing a nanocrystalline film according to the present invention at another view angle when feeding wires to a jig table;
FIG. 3 is a cross-sectional view at A-A of FIG. 2;
fig. 4 is an enlarged view at B of fig. 3;
fig. 5 is an enlarged view at C of fig. 3;
FIG. 6 is a schematic view showing the structure of a wire feeding claw in the apparatus for producing a nanocrystalline thin film according to the present invention at a first angle of view when the wire feeding claw is separated from a jig table;
FIG. 7 is a schematic view showing the structure of a wire feeding claw in the apparatus for producing a nanocrystalline thin film according to the present invention at a second angle of view when the wire feeding claw is separated from a jig table;
FIG. 8 is a schematic view of the structure of a jig table in the apparatus for producing a nanocrystalline thin film according to the present invention;
FIG. 9 is a schematic structural view of a supporting mechanism in the apparatus for preparing a nanocrystalline thin film according to the present invention;
FIG. 10 is an exploded view of a support mechanism in the apparatus for preparing a nanocrystalline thin film according to the present invention.
In the accompanying drawings: 1-a bearing mechanism; 11-a fixed seat; 111-a base; 112-a cylinder; 12-a sliding seat; 121-a fixing ring; 13-a one-way valve member; 131-balls; 132-a second spring; 14-supporting plates; 141-a connection port; 15-a first spring; 16-limiting rings; 17-limiting plates; 171-positioning a cylinder; 18-a sealing ring; 2-a wire clamping mechanism; 21-a placement seat; 22-a first polish rod; 23-a second polish rod; 24-a first toothed plate; 241-a first fixing plate; 25-a second toothed plate; 251-a second fixing plate; 26-a third spring; 27-fourth springs; 281-a first slider; 282-second slider; 283-two-way screw rod; 284-a first link; 285-a second link; 3-a substrate; 4-a wire feeding claw; 41-a wide finger cylinder; 42-cylinder clamping jaw; 43-third toothed plate; 44-fourth toothed plate; 45-fixing frame; 46-pressing plates; 47-stopping the slip ring; 48-a fifth spring; 49-a fixed rod; 5-a glass liner; 6-conducting wires; 101-a first airway; 102-a second airway; 103-setting up the channel; 104-conical mouth.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationship described in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
The same or similar reference numbers in the drawings of embodiments of the invention correspond to the same or similar components; in the description of the present invention, it should be understood that, if there are orientations or positional relationships indicated by terms "upper", "lower", "left", "right", "long", "short", etc., based on the orientations or positional relationships shown in the drawings, this is merely for convenience in describing the present invention and simplifying the description, and is not an indication or suggestion that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, so that the terms describing the positional relationships in the drawings are merely for illustration and are not to be construed as limitations of the present invention, and that it is possible for those of ordinary skill in the art to understand the specific meanings of the terms described above according to specific circumstances.
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
example 1
1-10, a nano-crystal film preparation device comprises a clamp table, a grooving mechanism, a wire embedding mechanism, a plasma cleaning mechanism and a magnetron sputtering mechanism, wherein the clamp table is used for placing a glass lining 5 and is movable, the grooving mechanism is used for grooving the surface of the glass lining 5, the wire embedding mechanism is used for embedding a conductive wire 6 into the surface grooving of the glass lining 5, the plasma cleaning mechanism is used for cleaning the glass lining 5 after wire embedding, and the magnetron sputtering mechanism is used for sputtering a nano-crystal film to the cleaned glass lining 5; the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are sequentially arranged, the preparation device further comprises a vacuum box, the clamp table, the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are all located in the vacuum box, and all operations are performed in a vacuum environment. The preparation device further comprises a conveying belt, the clamp table is arranged on the conveying surface of the conveying belt, and the clamp table can move in the working areas of the slotting mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism under the conveying of the conveying belt so as to finish the operations of slotting, wire embedding, cleaning and sputtering the nanocrystalline film on the glass lining 5.
As shown in fig. 3, 4 and 10, the fixture platform includes a substrate 3, a supporting mechanism 1 and two groups of wire clamping mechanisms 2, the supporting mechanism 1 is used for adsorbing and fixing a glass lining 5, the two groups of wire clamping mechanisms 2 can clamp and stretch the two ends of a conductive wire 6 on the glass lining 5, the supporting mechanism 1 and the two groups of wire clamping mechanisms 2 are all arranged on the substrate 3, and the two groups of wire clamping mechanisms 2 are respectively positioned at two sides of the supporting mechanism 1.
The supporting mechanism 1 includes a fixing seat 11, a sliding seat 12, a one-way valve 13, a supporting plate 14 and a first spring 15, the fixing seat 11 is fixedly disposed on the base plate 3, the sliding seat 12 is coaxially slidably disposed on the fixing seat 11, the first spring 15 is coaxially disposed between the sliding seat 12 and the fixing seat 11, the sliding seat 12 is provided with a first air passage 101 penetrating vertically, the fixing seat 11 is provided with a second air passage 102 penetrating vertically, the first air passage 101 is communicated with the second air passage 102, the one-way valve 13 is disposed in the second air passage 102, the supporting plate 14 is provided with a connecting port 141, and the top end of the sliding seat 12 is connected with the connecting port 141.
When the glass liner 5 is placed on the supporting plate 14, the sliding seat 12 moves downwards relative to the fixed seat 11, and the top end of the first air passage 101 is sealed by the glass liner 5, so that air in the first air passage 101 and the second air passage 102 is discharged outwards through the one-way valve element 13, the pressure in the first air passage 101 and the second air passage 102 is smaller than the atmospheric pressure, the top end pressure of the glass liner 5 is high, the bottom end pressure of the glass liner is low, the glass liner 5 can be adsorbed on the sliding seat 12, and sliding of the glass liner 5 during subsequent wire embedding, cleaning or sputtering is prevented.
As shown in fig. 3 to 5, the fixing base 11 includes a base 111 and a cylinder 112, the base 111 is fixedly disposed on the base plate 3, the cylinder 112 is connected to the base 111 and is formed by extending upward from an outer circumferential surface of the base 111, the first spring 15 is coaxially disposed between the sliding base 12 and the base 111, the base 111 has a disposition passage 103 therein, and the one-way valve member 13 is disposed in the disposition passage 103.
By fixedly disposing the seat body 111 on the base plate 3 with the circumferential surface of the seat body 111 extending upward to form the cylinder 112, the slide seat 12 is coaxially slidably disposed in the cylinder 112 so that the bottom end of the slide seat 12 can be stably slid in the cylinder 112, and the first spring 15 is disposed between the slide seat 12 and the seat body 111 so that the slide seat 12 is moved upward by the first spring 15 against the elastic force of the first spring 15 when sliding downward, the pressure in the slide seat 12 and the fixing seat 11 is reduced due to the top end of the slide seat 12 being closed by the glass lining 5, thereby adsorbing the glass lining 5 on the slide seat 12.
As shown in fig. 4, the top of the cylinder 112 is provided with a limit structure for preventing the sliding seat 12 from falling out, the limit structure comprises a fixed ring 121 and a limit ring 16, the fixed ring 121 is arranged at the bottom end of the outer circumferential surface of the sliding seat 12, the fixed ring 121 is coaxially and slidably arranged in the cylinder 112, the limit ring 16 is coaxially arranged at the top end of the inner circumferential surface of the cylinder 112, and the limit ring 16 is slidably matched with the outer circumferential surface of the sliding seat 12.
In order to prevent the sliding seat 12 from being separated from the fixed seat 11 under the action of the first spring 15, a fixing ring 121 is disposed at the bottom end of the outer circumferential surface of the sliding seat 12, and a limiting ring 16 is disposed at the top end of the inner circumferential surface of the cylinder 112, so that the limiting ring 16 can prevent the sliding seat 12 from being separated from the fixed seat 11 when the fixing ring 121 slides in the cylinder 112.
As shown in fig. 5, the unidirectional valve member 13 includes a ball 131 and a second spring 132, the top end of the placement channel 103 has a tapered opening 104 with a cross section or a diameter gradually decreasing from bottom to top, the supporting mechanism 1 further includes a limiting disc 17, the limiting disc 17 is coaxially disposed at the bottom of the seat 111, the limiting disc 17 has an air port coaxial with the air port, the top end of the air port is provided with a positioning cylinder 171 extending upwards, the second spring 132 is sleeved in the positioning cylinder 171, the ball 131 is slidably disposed in the tapered opening 104, and the top end of the second spring 132 is abutted against the bottom end of the ball 131.
When the sliding seat 12 moves downwards in the fixed seat 11, the air in the first air channel 101 and the second air channel 102 pushes the balls 131 to overcome the elastic force of the second spring 132, so that the balls 131 withdraw from the conical opening 104, the placement channel 103 and the first air channel 101 are communicated with the second air channel 102, the balls 131 are blocked at the conical opening 104 under the elastic force of the second spring 132, and the pressure in the first air channel 101 and the second air channel 102 is smaller than the external atmosphere, so that the glass lining 5 is adsorbed on the sliding seat 12.
As shown in fig. 8, the wire clamping mechanism 2 comprises a setting seat 21, a first polished rod 22, a second polished rod 23, a first toothed plate 24, a second toothed plate 25, a third spring 26 and a fourth spring 27, wherein the setting seat 21 is arranged on the base plate 3, the first polished rod 22 and the second polished rod 23 are horizontally arranged on the setting seat 21, the first toothed plate 24 is slidingly arranged on the first polished rod 22, the second toothed plate 25 is slidingly arranged on the second polished rod 23, the top ends of the first toothed plates 24 are uniformly provided with first clamping grooves, the top ends of the second toothed plates 25 are uniformly provided with second clamping grooves, the third spring 26 is sleeved on the first polished rod 22, the fourth spring 27 is sleeved on the second polished rod 23, and the first clamping grooves and the second clamping grooves can elastically clamp the end parts of the conductive wires 6.
Two ends of the first toothed plate 24 are respectively provided with two first fixing plates 241 detachably connected with the first toothed plate, the first polished rod 22 penetrates through the first fixing plates 241 and is in sliding fit with the first fixing plates 241, and the third spring 26 is abutted against one end of one side of the first fixing plates 241; two ends of the second toothed plate 25 are respectively provided with two second fixing plates 251 detachably connected with the second toothed plate, the second polished rod 23 penetrates through the second fixing plates 251 and is in sliding fit with the second fixing plates 251, and the fourth spring 27 abuts against one end of one side of the second fixing plates 251.
The first clamping groove of the first toothed plate 24 and the second clamping groove of the second toothed plate 25 are staggered with each other, and when the wire embedding mechanism sends the end of the conductive wire 6 into the first clamping groove and the second clamping groove, the first clamping groove and the second clamping groove clamp the end of the conductive wire 6 under the action of the third spring 26 and the fourth spring 27, and simultaneously the conductive wire 6 can be embedded into the groove of the glass lining 5.
As shown in fig. 7, the wire clamping mechanism 2 further includes a height adjusting assembly, the height adjusting assembly includes a first slider 281, a second slider 282, a bidirectional screw rod 283, a first link 284 and a second link 285, the first slider 281 and the second slider 282 are disposed on the base plate 3 in a manner of opposite or back sliding, the bidirectional screw rod 283 is rotatably disposed on the base plate 3, the bidirectional screw rod 283 is in threaded connection with the first slider 281 and the second slider 282, two ends of the first link 284 are respectively in rotational connection with the placement seat 21 and the first slider 281, and two ends of the second link 285 are respectively in rotational connection with the placement seat 21 and the second slider 282.
When the height of the placement seat 21 needs to be adjusted, the bidirectional screw rod 283 is rotated, so that the first slider 281 and the second slider 282 move in opposite directions or back to back, and the first link 284 and the second link 285 are rotationally connected with the bottom end of the placement seat 21, so that the placement seat 21 moves upwards or downwards when the first slider 281 and the second slider 282 move, thereby facilitating the insertion of the conductive wire 6.
The slotting mechanism comprises a laser head, slots are formed in the top surface of the glass lining 5 through laser, and in the embodiment, the slotting mechanism is used for forming equidistant slots in the top surface of the glass lining 5.
The wire embedding mechanism comprises a wire feeding claw 4, the wire feeding claw 4 is used for feeding a conductive wire 6 into a groove formed in the top surface of a glass lining 5, and meanwhile, the wire feeding claw 4 can respectively feed two ends of the conductive wire 6 into two groups of wire clamping mechanisms 2 to be clamped and fixed.
As shown in fig. 7, the wire feeding claw 4 includes a wide finger cylinder 41, a cylinder claw 42, a third toothed plate 43 and a fourth toothed plate 44, the cylinder claw 42 is provided at the working end of the wide finger cylinder 41, the third toothed plate 43 and the fourth toothed plate 44 are fixedly provided at both working ends of the cylinder claw 42, the bottom end of the third toothed plate 43 is provided with third clamping grooves at equal intervals, and the bottom end of the fourth toothed plate 44 is provided with fourth clamping grooves at equal intervals.
In use, the ends of the third toothed plate 43 and the fourth toothed plate 44 clamp the conductive wires 6 by the wide finger cylinder 41 and the cylinder clamping jaw 42, and the ends are placed on the wire clamping mechanism 2, so that a plurality of conductive wires 6 can be stably clamped.
The plasma cleaning mechanism cleans the glass lining 5 by adopting a plasma surface cleaning technology, so as to remove greasy dirt on the glass lining 5, the magnetron sputtering mechanism is provided with a plurality of targets, and a layer of nanocrystalline film is sputtered on the surface of the glass lining 5 by adopting a magnetron sputtering technology.
As a preferred technical solution, the conductive wire 6 in this embodiment is a copper wire.
In this embodiment, a layer of nanocrystalline LaNiAl film is sputtered on the surface of the glass liner 5 by a magnetron sputtering mechanism to prepare a nanocrystalline LaNiAl film.
When the glass lining fixing device is used, the glass lining 5 is placed on the supporting mechanism 1 through the manipulator with the sucking disc, the supporting mechanism 1 is ensured to be capable of fixing the glass lining 5 and not easy to slide, then the clamp table loaded with the glass lining 5 is transferred to the slotting mechanism through the conveying belt, the slotting mechanism is provided with a laser head, and equidistant slots are formed in the top surface of the glass lining 5 through laser; starting the conveying belt again, moving the glass lining 5 provided with the grooves to the wire embedding mechanism, grabbing the conductive wires 6 by the wire embedding mechanism and sending the conductive wires 6 to the supporting mechanism 1 until the conductive wires 6 are embedded into the grooves of the glass lining 5, simultaneously connecting two ends of the conductive wires 6 with the two groups of wire clamping mechanisms 2 respectively, enabling the conductive wires 6 to be tightly tightened in the grooves of the glass lining 5 so as to prevent the conductive wires 6 from bending during sputtering, sending the glass lining 5 after wire embedding to the plasma cleaning mechanism for cleaning, removing greasy dirt on the glass lining 5, sending the glass lining 5 to the magnetron sputtering mechanism after cleaning is finished, sputtering a layer of nanocrystalline film on the top surface of the glass lining 5 through the magnetron sputtering mechanism, taking materials, vacuum packaging a finished product, and completing all operations in a high vacuum degree area.
According to the invention, the glass lining 5 is placed on the fixture table, the conducting wire 6 is embedded after the glass lining 5 is grooved through the grooving mechanism, the nanocrystalline film is sputtered on the glass lining 5 through the magnetron sputtering mechanism after the plasma cleaning mechanism is cleaned, and the processing of batch products can be realized, so that the efficiency is greatly improved, wherein a layer of surface material is directly removed through the plasma cleaning mode, the bottom is cut more effectively than other oil removing methods, and the multi-target magnetron sputtering is adopted, so that the method is efficient and reliable.
The invention also provides a preparation method of the nanocrystalline film, which uses the preparation device and specifically comprises the following steps:
firstly, placing a glass lining 5 on a clamp table, wherein a supporting mechanism 1 can adsorb and fix the glass lining 5;
step two, the glass lining 5 moves to the working area where the grooving mechanism is located along with the clamp table, the grooving mechanism is started, and the grooving mechanism performs grooving on the top surface of the glass lining 5;
step three, the glass lining 5 with the grooves moves to the working area where the wire embedding mechanism is located along with the clamp table, the wire embedding mechanism is started, the wire feeding claw 4 of the wire embedding mechanism embeds the conductive wires 6 into the grooves on the surface of the glass lining 5, and meanwhile, the end parts of the conductive wires 6 are sent to the wire clamping mechanism 2 to be clamped and fixed;
step four, continuously moving the glass lining 5 embedded with the conductive wire 6 along with the clamp table into a working interval where the plasma cleaning mechanism is located, starting the plasma cleaning mechanism, and cleaning the glass lining 5 by the plasma cleaning mechanism;
and fifthly, the cleaned glass lining 5 moves to a magnetron sputtering mechanism along with the clamp table, and the magnetron sputtering mechanism sputters a layer of nanocrystalline film on the top of the glass lining 5 to finish the preparation of the nanocrystalline film with a heating circuit.
In the first step, the glass liner 5 is placed on the supporting mechanism 1 by the manipulator with the suction cup, when the glass liner 5 is placed on the supporting plate 14, the sliding seat 12 moves downward relative to the fixed seat 11, and the top end of the first air channel 101 is closed by the glass liner 5, when the sliding seat 12 moves downward in the fixed seat 11, the air in the first air channel 101 and the second air channel 102 pushes the balls 131 to overcome the elastic force of the second spring 132, so that the balls 131 withdraw from the cone opening 104, the placing channel 103 is communicated with the first air channel 101 and the second air channel 102, and the balls 131 are blocked at the cone opening 104 under the elastic force of the second spring 132, so that the pressure in the first air channel 101 and the second air channel 102 is smaller than the external atmosphere, and the glass liner 5 is adsorbed on the sliding seat 12.
In the second step, the clamp table can be conveyed and moved by a conveying belt, the conveying belt moves the clamp table to a working area where a slotting mechanism is located, and the slotting mechanism opens equidistant slotting on the top surface of the glass lining 5 by laser;
in the third step, the clamp table is continuously moved to the wire embedding mechanism by the conveyor belt, the third toothed plate 43 and the fourth toothed plate 44 grasp the conductive wire 6 under the drive of the air cylinder clamping jaw 42 and send the conductive wire 6 to the slot on the glass lining 5 under the drive of the wide finger air cylinder 41, and simultaneously the first toothed plate 24 and the second toothed plate 25 can clamp and fix the end part of the conductive wire 6, so that the conductive wire 6 is tightly tightened in the slot of the glass lining 5;
in the fourth step, the plasma cleaning mechanism cleans the glass liner 5 by adopting a plasma surface cleaning technology, so as to remove the greasy dirt on the glass liner 5;
in the fifth step, the magnetron sputtering mechanism adopts multi-target magnetron sputtering, adopts the magnetron sputtering technology to sputter a layer of nanocrystalline film on the surface of the glass lining 5, and finally takes materials and vacuum packages the finished product.
Example 2
This embodiment is an embodiment 2 of a device for preparing a nanocrystalline thin film, and the difference between this embodiment and embodiment 1 is that: as shown in fig. 9, the tip of the first air passage 101 is provided with the seal ring 18 coaxial therewith, which can improve the sealing property between the tip of the first air passage 101 and the glass liner 5.
Example 3
This embodiment is an embodiment 3 of a device for preparing a nanocrystalline thin film, which is different from embodiment 1 in that: as shown in fig. 7, the wire feeding claw 4 in this embodiment further includes a fixing frame 45, a pressing plate 46, a fixing rod 49, a retaining ring 47 and a fifth spring 48, wherein the fixing frame 45 is disposed on the wide finger cylinder 41, the fixing rod 49 is fixedly disposed on the pressing plate 46 along the longitudinal direction, the fixing rod 49 penetrates through the fixing frame 45 and is in sliding fit with the fixing frame 45, the retaining ring 47 is coaxially disposed at the top end of the fixing rod 49, the pressing plate 46 is fixedly disposed at the bottom end of the fixing rod 49, the fifth spring 48 is sleeved on the fixing rod 49, and the fifth spring 48 is disposed between the pressing plate 46 and the fixing frame 45.
When the electric wire clamping mechanism is used, the ends of the third toothed plate 43 and the fourth toothed plate 44 clamp the electric wires 6 and place the electric wires on the wire clamping mechanism 2 through the wide finger air cylinder 41 and the air cylinder clamping jaw 42, so that a plurality of electric wires 6 can be stably clamped, and the electric wires 6 can be stably embedded into grooves on the surface of the glass lining 5 through the pressing plate 46.
The foregoing examples merely illustrate one or more embodiments of the invention, which are described in greater detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (14)
1. The clamp table for preparing the nanocrystalline thin film is characterized by comprising a substrate (3), a bearing mechanism (1) for adsorbing and fixing a glass lining (5) and two groups of wire clamping mechanisms (2) capable of clamping and stretching two ends of a conductive wire (6) on the bearing mechanism (1), wherein the two groups of wire clamping mechanisms (2) are respectively positioned at two sides of the bearing mechanism (1) and are both arranged on the substrate (3); the bearing mechanism (1) comprises a fixed seat (11), a sliding seat (12), a one-way valve (13), a supporting plate (14) and a first spring (15), wherein the fixed seat (11) is fixedly arranged on a base plate (3), the sliding seat (12) is coaxially and slidingly arranged on the fixed seat (11), the first spring (15) is coaxially arranged between the sliding seat (12) and the fixed seat (11), a first air passage (101) penetrating up and down is arranged in the sliding seat (12), the fixed seat (11) is provided with a second air passage (102) penetrating up and down, the first air passage (101) is communicated with the second air passage (102), the one-way valve (13) is arranged in the second air passage (102), the supporting plate (14) is provided with a connecting port (141), the top end of the sliding seat (12) is connected with the connecting port (141), and the glass lining (5) is arranged on the supporting plate (14); the wire clamping mechanism (2) comprises a placement seat (21), a first polished rod (22), a second polished rod (23), a first toothed plate (24), a second toothed plate (25), a third spring (26) and a fourth spring (27), wherein the placement seat (21) is arranged on the base plate (3), the first polished rod (22) and the second polished rod (23) are horizontally arranged on the placement seat (21), the first toothed plate (24) is slidingly arranged on the first polished rod (22), the second toothed plate (25) is slidingly arranged on the second polished rod (23), first clamping grooves are uniformly arranged at the top end of the first toothed plate (24), second clamping grooves are uniformly arranged at the top end of the second toothed plate (25), the third spring (26) is sleeved on the first polished rod (22), and the fourth spring (27) is sleeved on the second polished rod (23), and the first clamping grooves and the end of the elastic wire (6) can be clamped.
2. A jig table for preparing nanocrystalline thin film according to claim 1, characterized in that the fixing base (11) comprises a base body (111) fixedly provided on the substrate (3) and a cylinder body (112) connected to the base body (111), the sliding base (12) being coaxially slidably provided in the cylinder body (112); a limiting structure for preventing the sliding seat (12) from falling off is arranged at the top of the cylinder body (112); the seat body (111) is provided with a placement channel (103), and the one-way valve (13) is arranged in the placement channel (103).
3. A jig table for preparing nanocrystalline thin film according to claim 2, characterized in that the limit structure comprises a fixing ring (121) and a limit ring (16); the fixed ring (121) is arranged at the bottom end of the outer circumferential surface of the sliding seat (12), the fixed ring (121) is coaxially and slidably arranged in the cylinder body (112), the limiting ring (16) is coaxially arranged at the top end of the inner circumferential surface of the cylinder body (112), and the limiting ring (16) is slidably matched with the outer circumferential surface of the sliding seat (12).
4. A jig table for preparing a nanocrystalline film according to claim 2, characterized in that the one-way valve member (13) includes a ball (131) and a second spring (132), the top end of the placement channel (103) has a tapered mouth (104) whose cross section is gradually reduced from bottom to top, the ball (131) is slidably provided in the tapered mouth (104), and the top end of the second spring (132) abuts against the bottom end of the ball (131); the bottom of the base body (111) is also coaxially provided with a limiting disc (17); the limiting plate (17) is provided with an air port communicated with the placement channel (103), the top end of the air port of the limiting plate (17) is provided with a positioning cylinder (171) extending upwards, and the second spring (132) is sleeved on the positioning cylinder (171).
5. A jig table for preparing nanocrystalline thin film according to claim 1, characterized in that the top end of the first air passage (101) is provided with a sealing ring (18) coaxial therewith.
6. The fixture table for preparing a nano-crystal film according to claim 1, wherein the wire clamping mechanism (2) further comprises a height adjusting assembly, the height adjusting assembly comprises a first sliding block (281), a second sliding block (282), a bidirectional screw rod (283), a first connecting rod (284) and a second connecting rod (285), the first sliding block (281) and the second sliding block (282) are arranged on the base plate (3) in a sliding way in the opposite direction or the back direction, the bidirectional screw rod (283) is rotatably arranged on the base plate (3), the bidirectional screw rod (283) is in threaded connection with the first sliding block (281) and the second sliding block (282), two ends of the first connecting rod (284) are respectively in rotary connection with the placement seat (21) and the first sliding block (281), and two ends of the second connecting rod (285) are respectively in rotary connection with the placement seat (21) and the second sliding block (282).
7. The device for preparing the nanocrystalline thin film is characterized by comprising the clamp table, a grooving mechanism for grooving the top end of a glass lining (5) on a supporting mechanism (1) and a wire embedding mechanism for embedding a conductive wire (6) into the grooving, wherein the wire embedding mechanism can clamp two ends of the conductive wire (6) on two groups of wire clamping mechanisms (2) respectively.
8. The device for preparing the nanocrystalline thin film according to claim 7, wherein the slotting mechanism comprises a laser head, and slots for embedding the conductive wires (6) are formed on the top surface of the glass lining (5) through laser.
9. The device for preparing the nanocrystalline thin film according to claim 7, wherein the wire embedding mechanism comprises a wire feeding claw (4), the wire feeding claw (4) comprises a wide finger cylinder (41), a cylinder clamping jaw (42), a third toothed plate (43) and a fourth toothed plate (44), the cylinder clamping jaw (42) is arranged at the working end of the wide finger cylinder (41), the third toothed plate (43) and the fourth toothed plate (44) are fixedly arranged at the two working ends of the cylinder clamping jaw (42), third clamping grooves are formed in the bottom end of the third toothed plate (43) at equal intervals, and fourth clamping grooves are formed in the bottom end of the fourth toothed plate (44) at equal intervals.
10. The device for preparing the nanocrystalline thin film according to claim 9, wherein the wire feeding claw (4) further comprises a fixing frame (45), a pressing plate (46), a fifth spring (48) and a fixing rod (49), the fixing frame (45) is arranged on the wide finger cylinder (41), the bottom end of the fixing rod (49) is fixedly arranged on the pressing plate (46), the fixing rod (49) is in sliding connection with the fixing frame (45), a through hole for the top of the fixing rod (49) to extend out is formed in the fixing frame (45), a retaining ring (47) for preventing the fixing rod (49) from falling out of the through hole of the fixing frame (45) is connected to the top of the fixing rod (49), and the fifth spring (48) is sleeved on the fixing rod (49) and is located between the pressing plate (46) and the fixing frame (45).
11. The apparatus for preparing a nano-crystal film according to claim 7, further comprising a plasma cleaning mechanism for cleaning the glass liner sheet of the embedded wire.
12. The device for preparing the nanocrystalline thin film according to claim 11, further comprising a magnetron sputtering mechanism for sputtering a layer of nanocrystalline film on the cleaned glass lining, wherein the nanocrystalline film is sputtered on the top end of the glass lining (5).
13. The apparatus according to any one of claims 7 to 12, further comprising a vacuum box, wherein the clamp table, the grooving mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are all located in the vacuum box, the grooving mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism are sequentially installed in the vacuum box, the clamp table is installed on a conveyor belt, and the clamp table loaded with the glass liner (5) can be sequentially moved to the grooving mechanism, the wire embedding mechanism, the plasma cleaning mechanism and the magnetron sputtering mechanism under the conveying of the conveyor belt to perform grooving, wire embedding, cleaning and nano-crystal film sputtering operations.
14. A method for preparing a nanocrystalline thin film, characterized in that the preparation apparatus according to claim 13 is used, comprising the steps of:
firstly, placing a glass lining (5) on a clamp table, wherein a supporting mechanism (1) can adsorb and fix the glass lining (5);
step two, the glass lining (5) moves to the working area where the grooving mechanism is located along with the clamp table, the grooving mechanism is started, and the grooving mechanism performs grooving on the top surface of the glass lining (5);
step three, the glass lining (5) with the grooves moves to the working area where the wire embedding mechanism is located along with the clamp table, the wire embedding mechanism is started, the wire feeding claw (4) of the wire embedding mechanism embeds the conductive wires (6) into the grooves of the glass lining (5), meanwhile, the end parts of the conductive wires (6) are sent to the wire clamping mechanism (2) to be clamped and fixed, and the glass lining (5) embedded with the conductive wires (6) is cleaned by the plasma cleaning mechanism and sputtered by the magnetron sputtering mechanism to obtain the required nanocrystalline film.
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| CN210102878U (en) * | 2019-05-14 | 2020-02-21 | 苏州美图半导体技术有限公司 | Sputtering platform tray alignment transfer device |
| JP2020072105A (en) * | 2018-10-29 | 2020-05-07 | キヤノントッキ株式会社 | Transport device, deposition apparatus, manufacturing system of organic el element, and manufacturing method of organic el element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2020072105A (en) * | 2018-10-29 | 2020-05-07 | キヤノントッキ株式会社 | Transport device, deposition apparatus, manufacturing system of organic el element, and manufacturing method of organic el element |
| CN210102878U (en) * | 2019-05-14 | 2020-02-21 | 苏州美图半导体技术有限公司 | Sputtering platform tray alignment transfer device |
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