CN1169230C - 一种光热辐射感生电压材料及其薄膜的制备方法 - Google Patents
一种光热辐射感生电压材料及其薄膜的制备方法 Download PDFInfo
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- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
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- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract description 9
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- 238000003384 imaging method Methods 0.000 abstract description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 abstract 1
- 229910002427 LaSrAlO4 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
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Abstract
本发明涉及一种光热辐射感生电压材料及其薄膜的制备方法,属光、热辐射感生电压材料技术领域。本发明用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料,并将其外延生长在倾斜取向的SrTiO3、LaAlO3、YSZ、MgO或LaSrAlO4单晶衬底上。因而具有和YBCO类似的光、热辐射感生电压效应。特点是制备价格低,稳定性优于YBCO,可以在室温下工作,不必致冷,可以在很宽的光、热辐射频谱下工作(从紫外、可见光到远红外),时间常数小等优点。可用于制造光、热辐射的探测器,做成薄膜的阵列时可用于快速成像。
Description
本发明涉及一种光热辐射感生电压材料及其薄膜的制备方法,属光、热辐射感生电压材料技术领域。
已有的光、热辐射感生电压材料可以分为两大类:光子探测器和热探测器。光子探测器多基于半导体材料。当入射光子的能量高于能隙或杂质能级时,可将电子或空穴激发成为自由载流子,从而使入射辐射被测量。但是这类材料大多只在确定而有限的光波长下工作。并且工作波长越长,信号噪声也越大,为了降低噪声材料和器件必须致冷。如用HgCdTe材料制造的红外成像仪。
热探测器也分很多种,多是基于晶体受热时物理参数的改变,通过测量物理参数的变化推知晶体接受的热辐射。如利用超导体从正常态到超导态转变点附近的电阻对热的极端敏感而制造的Bolometer,如利用热释电效应制造的红外探测器等。
新的一类光热辐射探测器是基于各向异性的SeebecK效应,并最先在YBa2Cu3O7-δ(YBCO)中发现。这类材料由于晶体结构的各向异性当沉积在倾斜的单晶衬底上时就会有光热感生电压出现。人们利用此效应已开发了几种光、热辐射探测器。其优点是在很宽的频谱(从红外到紫外)内均有很高的响应率而时间常数很小。其唯一的缺点是YBCO在使用环境中的稳定性较差,并需进一步提高其灵敏度。
本发明的目的在于克服现有技术之不足,提供一种具有制备价格低,不必致冷,可以在宽的频谱范围内工作(从紫外、可见光到远红外),时间常数小,在使用环境中性能稳定性优于YBCO等优点的光热辐射感生电压材料及其薄膜的制备方法。
本发明是这样实现的:
用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料,这类材料的基本分子式为:
T1-XDXMnYOδ
式中T代表三价的Y、稀土离子或其组合,D代表二价Ca、Sr、Pb、Ba或其组合,x小于1,y=0.75-1.5,6=2.5-4.0。
用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料,用已知技术外延地生长在倾斜取向的SrTiO3、LaAlO3、YSZ、MgO或LaSrAlO4单晶衬底上。倾斜角度为5°至30°。
感生电压效应的大小可由下列公式表述:
其中VX为在X方向上感生的电压,L为感受光、热辐射的薄膜长度,d为薄膜厚度。ΔTZ为光、热辐射照射样品时在薄膜Z方向上产生的温差,ΔS=(Sab-Sc)为这类材料的Seebeck系数在两个方向上的差值,θ为单晶衬底表面法向与(001)轴之间的夹角,即倾斜角。
图1为与(1)式有关的样品取向示意图。
图2为用倾斜10°的SrTiO3单晶衬底上生长的La0.67Ca0.33MnO3薄膜在脉冲紫外激光照射下获得的感生电压的时间响应曲线。
下面将结合附图对本发明作进一步详述:
用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料,这类材料的基本分子式为:
T1-XDXMnYOδ
式中T代表三价的Y和稀土离子或其组合,D代表二价Ca、Sr、Pb、Ba或其组合,x小于1,分别取y=0.75、1、1.5,6=2.5、3、4.0。用已知技术将其分别外延生长在5°、10°、30°倾斜取向的SrTiO3、LaAlO3、YSZ、MgO或LaSrAlO4单晶衬底上。当用脉冲光(或热辐射)照射样品表面时,则在样品表面X方向感生出电压VX。该电压与入射光强有比例关系。从而可用于测量相应的辐射强度,或做成阵列时,可形成相应辐射的像。
用上述方法在10°倾斜取向的SrTiO3单晶衬底上生长的La0.9Ca01MnO3薄膜与同样条件下制备的YBCO膜相比,当用20ns脉冲宽度的紫外激光(λ=248nm)相同功率照射并测量时,其感生电压峰值与YBCO均达伏的量级,很容易测量。
本发明与现有技术相比,具有如下优点:用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料制备成的薄膜,在光、热辐射照射下产生可以测量的电压。从而可用于制造光、热辐射的探测器,做成薄膜的阵列时可以成像。它可以在室温下工作,不必致冷;它价格比同样性能的YBCO便宜;它比YBCO膜在使用环境中更稳定;它可以在很宽的光辐射频谱下工作(从紫外、可见光到远红外波段),时间常数小。
Claims (2)
1、一种光热辐射感生电压材料,其特征在于用T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料;其分子式T1-XDXMnYOδ中:T代表三价的Y、稀土离子或其组合,D代表二价Ca、Sr、Pb、Ba或其组合,其中x小于1,y=0.75-1.5,δ=2.5-4.0。
2、一种光热辐射感生电压材料薄膜的制备方法,其特征在于将T1-XDXMnYOδ作为光辐射、热辐射感生电压效应的材料,并外延生长在5°-30°倾斜取向的SrTiO3、LaAlO3、YSZ、MgO或LaSrAlO4单晶衬底上。
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CN100355089C (zh) * | 2003-07-04 | 2007-12-12 | 云南大学 | 改性红外探测材料-非晶SiGe薄膜的制备方法 |
CN101775271B (zh) * | 2009-12-29 | 2012-06-06 | 同济大学 | 一种常温温致发射率大幅度可逆变化材料 |
CN102359820A (zh) * | 2011-09-30 | 2012-02-22 | 昆明理工大学 | 一种层状氧化物多晶陶瓷的热辐射探测器 |
CN103427013A (zh) * | 2013-08-30 | 2013-12-04 | 昆明理工大学 | 一种原子层热电堆材料及其应用 |
CN107195721B (zh) * | 2017-06-07 | 2023-05-12 | 昆明理工大学 | 一种基于能斯特效应和原子层热电堆的复合光热探测器 |
CN108534945B (zh) * | 2018-03-22 | 2021-01-05 | 昆明理工大学 | 一种调制薄膜激光感生电压的方法 |
CN108330446B (zh) * | 2018-03-29 | 2019-11-08 | 昆明理工大学 | 一种liv效应可调的镧钙锰氧薄膜制备设备 |
CN113363333B (zh) * | 2021-05-31 | 2022-02-01 | 西南科技大学 | 一种无机钙钛矿型锰氧化物可见光电导薄膜的制备方法及应用 |
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