CN116922000A - Annular target processing method - Google Patents
Annular target processing method Download PDFInfo
- Publication number
- CN116922000A CN116922000A CN202310860173.XA CN202310860173A CN116922000A CN 116922000 A CN116922000 A CN 116922000A CN 202310860173 A CN202310860173 A CN 202310860173A CN 116922000 A CN116922000 A CN 116922000A
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- CN
- China
- Prior art keywords
- target
- annular
- blank
- target blank
- annular target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 10
- 238000003801 milling Methods 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 6
- 238000004441 surface measurement Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000013077 target material Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0426—Fixtures for other work
- B23K37/0435—Clamps
- B23K37/0443—Jigs
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention relates to the technical field of target processing, and particularly discloses an annular target processing method, which comprises the following steps: processing the solid target blank to form an annular target blank with steps on the inner side and the outer side; welding one end of the annular target blank with the step on the backboard to form a target assembly; clamping the target assembly through a plurality of flat tongs to process one surface of the backing plate welding annular target blank to form a step surface; the target assembly is clamped through a plurality of flat tongs so as to finish one surface of the back plate, which faces away from the annular target blank. According to the invention, the solid target blank is firstly processed, and then the solid target blank is welded on the backboard, so that deformation of the target assembly during processing can be prevented, and the situation that the annular target blank is unwelded with the backboard is caused; the target assembly is clamped by the plurality of flat tongs, so that the clamping force of the single flat tongs can be dispersed and reduced, the deformation caused by clamping is reduced to the maximum extent, and the annular target blank and the backboard are prevented from being unwelded in the external force leveling process.
Description
Technical Field
The invention relates to the technical field of target processing, in particular to a ring-shaped target processing method.
Background
The target material is a material for manufacturing a film, and specifically, the surface of the target material is bombarded by high-energy particles, so that atoms or molecules on the surface of the target material can obtain enough energy to escape, and further, the atoms or molecules are deposited on the surface of the substrate to form the film. The target material consists of a target blank and a back plate, wherein the target blank is made of high-purity metal and is a target of high-speed ion beam bombardment, the back plate is connected with the target blank through a welding process, the effect of fixing the target blank is achieved, and the back plate needs to be provided with heat conduction and electric conductivity.
The annular nickel target material consists of an annular nickel target blank and a copper back plate. In the prior art, a solid nickel target blank and a thick copper back plate are welded to form a component to be processed, and then the component to be processed is milled after welding to form a finished annular nickel target, but in the finished annular nickel target, the center of the annular nickel target blank is hollowed out, the thickness of the corresponding copper back plate is thinner, deformation of the annular nickel target is easy to occur by adopting a direct welding and milling mode, and meanwhile, the annular nickel target blank and the copper back plate are easy to be subjected to desoldering.
Disclosure of Invention
The invention aims to provide a processing method of an annular target material, which solves the problems that in the prior art, the annular nickel target material is easy to deform by adopting a direct welding and milling mode, and simultaneously, the annular nickel target blank and a copper backboard are easy to be subjected to desoldering.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a processing method of an annular target, which comprises the following steps:
s1, processing a solid target blank to form an annular target blank with steps on the inner side and the outer side;
s2, welding one end of the annular target blank with the step on the backboard to form a target assembly;
s3, clamping the target assembly through a plurality of flat tongs, so that one side of the annular target blank of the target assembly faces upwards, and processing one surface of the backing plate welded with the annular target blank to form a step surface;
s4, clamping the target assembly through a plurality of flat tongs, so that one side of the back plate of the target assembly faces upwards, and finishing one surface of the back plate, which faces away from the annular target blank.
As an alternative to the above annular target processing method, in step S1, the method further includes:
grinding the solid target blank to reduce the thickness of the solid target blank;
and carrying out slow wire cutting processing on the solid target blank to form the annular target blank with steps on the inner side and the outer side.
As an alternative to the annular target processing method, after grinding the solid target blank, the flatness range of the solid target blank is less than or equal to 0.1mm.
As an alternative to the above annular target processing method, after step S1, before step S2, the method further includes: milling the steps of the annular target blank to finish the steps of the annular target blank.
As an alternative to the annular target processing method, in step S2, the flatness range of the formed target assembly is controlled to be less than or equal to 0.1mm.
As an alternative to the above annular target processing method, after step S2 and before step S3, the method further includes: milling one surface of the backboard, which is away from the annular target blank, to form a reference surface, wherein the flatness range of the reference surface is smaller than or equal to 0.1mm.
As an alternative to the above annular target processing method, in step S3 and step S4, the method further includes: and installing cushion blocks in the flat tongs so as to support the target assembly by using a plurality of cushion blocks.
As an alternative scheme of the annular target processing method, after the cushion block is installed in the flat tongs, the flatness of the cushion block is measured by marking a table, and the flatness range of the cushion block is controlled to be smaller than or equal to 0.05mm.
As an alternative to the annular target processing method, after the target assembly is installed in the flat tongs, the flatness of the target assembly is measured by performing surface marking, and the flatness range of the target assembly is controlled to be less than or equal to 0.1mm.
As an alternative to the above annular target processing method, in step S3 and step S4, the method further includes: and milling the backboard by a milling cutter with the diameter of 8 mm.
The beneficial effects of the invention are as follows:
in the invention, the solid target blank is firstly processed to form the annular target blank with steps on the inner side and the outer side, and then one end of the annular target blank with the steps is welded on the backboard to form the target assembly, so that the processing difficulty caused by processing after the solid target blank is welded on the backboard is avoided, and the deformation of the target assembly during processing is prevented, and the condition that the annular target blank and the backboard are unwelded is avoided; simultaneously, through adopting a plurality of flat tongs to carry out the centre gripping to the target subassembly, can disperse and reduce the centre gripping dynamics of single flat tongs, furthest reduces the deformation because of the centre gripping causes, prevents to flatten in-process because of external force, annular target base and backplate desoldering.
Drawings
Fig. 1 is a schematic flow chart of a method for processing an annular target according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Wherein the terms "first location" and "second location" are two distinct locations and wherein the first feature is "above," "over" and "over" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is level above the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The embodiment provides a processing method of an annular target material, which is used for processing and manufacturing the annular target material.
As shown in fig. 1, the annular target processing method comprises the following steps:
s1, processing a solid target blank to form an annular target blank with steps on the inner side and the outer side;
s2, welding one end of the annular target blank with the step on the backboard to form a target assembly;
s3, clamping the target assembly through a plurality of flat tongs, so that one side of an annular target blank of the target assembly faces upwards, and processing one surface of the backing plate welded with the annular target blank to form a step surface;
s4, clamping the target assembly through a plurality of flat tongs, so that one side of a back plate of the target assembly faces upwards, and finishing one side of the back plate, which faces away from the annular target blank, is performed.
In the embodiment, the solid target blank is firstly processed to form the annular target blank with the steps at the inner side and the outer side, and then one end of the annular target blank with the steps is welded on the backboard to form the target assembly, so that the processing difficulty caused by the processing of the solid target blank after being welded on the backboard is avoided, and the deformation of the target assembly during the processing is prevented, and the condition that the annular target blank and the backboard are unwelded is avoided; simultaneously, through adopting a plurality of flat tongs to carry out the centre gripping to the target subassembly, can disperse and reduce the centre gripping dynamics of single flat tongs, furthest reduces the deformation because of the centre gripping causes, prevents to flatten in-process because of external force, annular target base and backplate desoldering. Optionally, the annular target blank is a runway type nickel target blank, and the back plate is a copper plate. Of course, the annular target blank may be other target blanks, the backing plate may be other substrates, and the embodiment is not particularly limited.
Further, in step S1, the method further includes grinding the solid target blank to reduce the thickness of the solid target blank, thereby adjusting the shape of the solid target blank, and then performing a slow wire cutting process on the solid target blank to form an annular target blank with steps on the inner side and the outer side, so that the annular target blank is basically formed. Optionally, after grinding the solid target blank, the thickness tolerance of the solid target blank is within + -0.05 mm. Further alternatively, after grinding the solid target blank, the flatness range of the solid target blank is less than or equal to 0.1mm, so that the flatness of the solid target blank is improved, and the processing precision of subsequently processing the solid target blank into an annular target blank is improved.
Further, after step S1 and before step S2, milling the step of the annular target blank to finish forming the step of the annular target blank, so that after one end of the annular target blank with the step is welded on the backing plate, the position accuracy of the annular target blank relative to the backing plate can be effectively controlled, and the forming accuracy of the target assembly can be improved. Optionally, when milling the step of the annular target blank, a D6mm milling cutter is required, the rough milling cutter cutting amount is controlled to be less than or equal to 0.2mm, and the finish milling cutter cutting amount is controlled to be less than or equal to 0.05mm.
Further, in step S2, the flatness range of the formed target assembly is controlled to be less than or equal to 0.1mm, so that the influence on the subsequent processing of the target assembly due to the higher flatness of the target assembly during welding forming is avoided.
Further, after step S2 and before step S3, milling is performed on one surface of the back plate, which faces away from the annular target blank, to form a reference surface, and the flatness range of the reference surface is less than or equal to 0.1mm, so that one surface of the back plate, which faces away from the annular target blank, is relatively flat, and the processing precision of a subsequent target assembly is improved. Optionally, when milling the surface of the back plate, which is away from the annular target blank, a D8mm milling cutter is required, the rough milling cutter cutting amount is controlled to be less than or equal to 0.2mm, the finish milling cutter cutting amount is controlled to be less than or equal to 0.1mm, and the machining allowance is required to flow out from the surface of the back plate, which is away from the annular target blank.
Further, in step S3 and step S4, the method further includes installing spacers in the flat tongs to support the target assembly by using a plurality of spacers, so as to increase the supporting force on the target assembly and reduce the deformation of the target assembly during processing. After the cushion block is installed in the flat tongs, the flatness of the cushion block is measured by the meter, the flatness range of the cushion block is controlled to be smaller than or equal to 0.05mm, and therefore the influence of the cushion block on the processing of the target assembly is avoided. Meanwhile, after the target assembly is installed in the flat tongs, the flatness of the target assembly is measured by the surface marking, and the flatness range of the target assembly is controlled to be smaller than or equal to 0.1mm, so that the flatness range of the final target assembly during processing meets the processing precision requirement, and the forming quality of the final target assembly is improved.
Further, in step S3 and step S4, milling is carried out on the backboard through the milling cutter with the diameter of 8mm, so that the cutting tool draft is reduced, the acting force on the target assembly in the milling cutter machining process is further reduced, and the problems of deformation and desoldering of the target assembly in the machining process are effectively solved. Optionally, when machining one side of the backing plate welded with the annular target blank to form a step surface and finishing one side of the backing plate facing away from the annular target blank, the rough cutting amount is controlled to be less than or equal to 0.1mm, and the finish milling cutting amount is controlled to be less than or equal to 0.05mm.
It is to be understood that the above examples of the present invention are provided for clarity of illustration only and are not limiting of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (10)
1. The annular target processing method is characterized by comprising the following steps of:
s1, processing a solid target blank to form an annular target blank with steps on the inner side and the outer side;
s2, welding one end of the annular target blank with the step on the backboard to form a target assembly;
s3, clamping the target assembly through a plurality of flat tongs, so that one side of the annular target blank of the target assembly faces upwards, and processing one surface of the backing plate welded with the annular target blank to form a step surface;
s4, clamping the target assembly through a plurality of flat tongs, so that one side of the back plate of the target assembly faces upwards, and finishing one surface of the back plate, which faces away from the annular target blank.
2. The annular target processing method according to claim 1, further comprising, in step S1:
grinding the solid target blank to reduce the thickness of the solid target blank;
and carrying out slow wire cutting processing on the solid target blank to form the annular target blank with steps on the inner side and the outer side.
3. The method of annular target machining according to claim 2, wherein after grinding the solid target blank, the solid target blank has a flatness range of less than or equal to 0.1mm.
4. The method of annular target processing according to claim 1, further comprising, after step S1, before step S2: milling the steps of the annular target blank to finish the steps of the annular target blank.
5. The annular target processing method according to claim 1, wherein in step S2, a flatness range of the formed target assembly is controlled to be less than or equal to 0.1mm.
6. The method of annular target processing according to claim 1, further comprising, after step S2 and before step S3: milling one surface of the backboard, which is away from the annular target blank, so as to form a reference surface, wherein the flatness range of the reference surface is smaller than or equal to 0.1mm.
7. The annular target processing method according to claim 1, further comprising, in step S3 and step S4: and installing cushion blocks in the flat tongs so as to support the target assembly by using a plurality of cushion blocks.
8. The method for machining the annular target according to claim 7, wherein after the cushion block is installed in the flat tongs, the flatness of the cushion block is measured by marking, and the flatness range of the cushion block is controlled to be smaller than or equal to 0.05mm.
9. The method of claim 8, wherein after the target assembly is installed in the flat tongs, the flatness of the target assembly is measured by performing a surface measurement, and the flatness range of the target assembly is controlled to be less than or equal to 0.1mm.
10. The annular target processing method according to claim 1, further comprising, in step S3 and step S4: and milling the backboard by a milling cutter with the diameter of 8 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310860173.XA CN116922000A (en) | 2023-07-13 | 2023-07-13 | Annular target processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310860173.XA CN116922000A (en) | 2023-07-13 | 2023-07-13 | Annular target processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116922000A true CN116922000A (en) | 2023-10-24 |
Family
ID=88388907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310860173.XA Pending CN116922000A (en) | 2023-07-13 | 2023-07-13 | Annular target processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116922000A (en) |
-
2023
- 2023-07-13 CN CN202310860173.XA patent/CN116922000A/en active Pending
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