CN116914027A - Back contact type solar cell and manufacturing method thereof, photovoltaic module and manufacturing method thereof - Google Patents
Back contact type solar cell and manufacturing method thereof, photovoltaic module and manufacturing method thereof Download PDFInfo
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- CN116914027A CN116914027A CN202311018393.4A CN202311018393A CN116914027A CN 116914027 A CN116914027 A CN 116914027A CN 202311018393 A CN202311018393 A CN 202311018393A CN 116914027 A CN116914027 A CN 116914027A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 77
- 229920005591 polysilicon Polymers 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 28
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 230000005641 tunneling Effects 0.000 claims abstract description 24
- 230000000149 penetrating effect Effects 0.000 claims abstract description 12
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 9
- 239000005360 phosphosilicate glass Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 6
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 128
- 238000010586 diagram Methods 0.000 description 12
- 238000002955 isolation Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
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- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The application relates to a back contact type solar cell, a manufacturing method thereof, a photovoltaic module and a manufacturing method thereof. The manufacturing method of the back contact type solar cell comprises the following steps: sequentially laminating a tunneling oxide layer and a polysilicon doped conductive layer on the first surface of the substrate, wherein the polysilicon doped conductive layer is provided with a plurality of hollow structures penetrating through the tunneling oxide layer and the polysilicon doped conductive layer so as to expose the first surface of the substrate to the outside; forming a mask on the polysilicon doped conductive layer, wherein the mask covers the polysilicon doped conductive layer and the hollow structure; forming a suede structure on the second surface of the substrate, forming an anti-reflection film on the suede structure, and removing the mask, wherein the second surface and the first surface are oppositely arranged; and forming a passivation layer on one side of the first surface of the substrate, and forming an alloy doped contact part penetrating through the passivation layer at a position corresponding to the hollow structure on the first surface. The back contact type solar cell, the manufacturing method, the photovoltaic module and the manufacturing method have the advantages of higher open-circuit voltage and higher cell efficiency.
Description
Technical Field
The application relates to the technical field of solar cell processing, in particular to a back contact type solar cell, a manufacturing method thereof, a photovoltaic module and a manufacturing method thereof.
Background
The full back electrode solar cell, i.e. IBC (interdigitated back contact refers to an intersecting back contact) cell, refers to a cell with no electrode on the front surface of the cell, and metal grid lines with positive and negative poles are arranged on the back surface of the cell in an interdigitated manner. In the IBC battery, the metal grid line is arranged on the back surface, so that the shielding of the metal grid line to light can be reduced, the optical loss can be obviously reduced, the efficiency can be improved, and the battery performance can be improved. In the manufacturing process of the IBC battery, a passivation contact layer is generally required to be manufactured on the back of the battery, a hollow structure is etched on the passivation contact layer, a P-type doped region and a metal gate line electrically connected with the P-type doped region are formed in the hollow structure, however, the IBC battery in the related technology often has a low open circuit voltage, and the efficiency of the solar battery is affected.
Disclosure of Invention
Accordingly, it is necessary to provide a back contact solar cell and a method for manufacturing the same, and a photovoltaic module and a method for manufacturing the same, which can improve an open circuit voltage and improve cell efficiency.
An embodiment of the present application provides a method for manufacturing a back contact solar cell, including:
sequentially laminating a tunneling oxide layer and a polysilicon doped conductive layer on the first surface of the substrate, wherein the polysilicon doped conductive layer is provided with a plurality of hollow structures penetrating through the tunneling oxide layer and the polysilicon doped conductive layer so as to expose the first surface of the substrate to the outside;
forming a mask on the polysilicon doped conductive layer, wherein the mask covers the polysilicon doped conductive layer and the hollow structure;
forming a suede structure on the second surface of the substrate, forming an anti-reflection film on the suede structure, and removing the mask, wherein the second surface and the first surface are oppositely arranged;
and forming a passivation layer on one side of the first surface of the substrate, and forming an alloy doped contact part penetrating through the passivation layer at a position corresponding to the hollow structure on the first surface.
In one embodiment, the step of forming a mask over the polysilicon doped conductive layer includes:
forming a mask material layer on each surface of the substrate, wherein the mask material layer covers the polysilicon doped conductive layer and the hollow structure;
the masking material layer on the side and the second side of the substrate is removed in a chain machine, the side of the substrate being adjacent between the first side and the second side.
In one embodiment, the mask comprises at least one of silicon nitride, silicon oxynitride, silicon oxide.
In one embodiment, the mask has a thickness of 20nm-50nm.
In one embodiment, the step of removing the mask includes:
the mask is removed in a slot machine with HF solution.
In one embodiment, the step of forming an alloy doped contact portion penetrating through the passivation layer at a position corresponding to the hollowed-out structure on the first surface specifically includes:
removing the passivation layer material at the position corresponding to the hollow structure on the passivation layer to expose the hollow structure locally;
and forming an alloy doped contact part on the substrate at a position corresponding to the hollow structure, and manufacturing a second electrode electrically connected with the alloy doped contact part in the hollow structure, wherein the alloy doped contact part is spaced from each inner side wall of the hollow structure.
In one embodiment, the step of forming an alloy doped contact on the substrate at a position corresponding to the hollowed-out structure, and fabricating a second electrode electrically connected to the alloy doped contact in the hollowed-out structure includes:
printing aluminum paste in the exposed hollow structure, and sintering at the temperature of more than 700 ℃ to form a second electrode and an Al-Si alloy doped contact part.
In one embodiment, the step of sequentially stacking the tunneling oxide layer and the polysilicon doped conductive layer on the first surface of the substrate includes:
sequentially stacking a tunneling oxide material layer and a polysilicon doped material layer on a first surface of a substrate;
removing the phosphosilicate glass formed on the side surface and the second surface of the substrate;
removing the phosphosilicate glass and a part of the polysilicon doped material layer at a preset position on the first surface of the substrate;
and removing the other part of the polysilicon doped material layer and the tunneling oxide material layer at the preset position on the first surface of the substrate, etching the polysilicon doped material layer and the tunneling oxide material layer to the inside of the second surface of the substrate to form a hollowed-out structure, and removing the polysilicon doped material layer which is plated around on the second surface and the side surface of the substrate.
The second aspect of the embodiment of the application provides a back contact solar cell, which is manufactured by adopting the manufacturing method of the back contact solar cell.
The third aspect of the embodiment of the application provides a manufacturing method of a photovoltaic module, which comprises the manufacturing method of the back contact solar cell.
In one embodiment, the method further comprises:
the back contact type solar cell is cut into half-piece cells, and the half-piece cells comprise a head end formed by cutting and a tail end arranged opposite to the head end;
and overlapping at least two half batteries end to end in sequence to form a photovoltaic module, wherein the tail end of one half battery is blocked at the light receiving side of the head end of the other half battery in the two adjacent half batteries.
The fourth aspect of the embodiment of the application provides a photovoltaic module, which is manufactured by the manufacturing method of the photovoltaic module.
The back contact type solar cell and the manufacturing method thereof, and the photovoltaic module and the manufacturing method thereof have the beneficial effects that:
through forming the mask that covers polycrystalline silicon doping conducting layer and hollow out construction on polycrystalline silicon doping conducting layer, form the in-process of pile face structure in second face one side, the mask can protect hollow out construction and polycrystalline silicon doping conducting layer wholly to at the second face in-process of making piles, the etching liquid can not cause the damage to the hollow out construction inside of first face and polycrystalline silicon doping conducting layer, can avoid the circumstances that back contact solar cell open circuit voltage is lower because hollow out construction is corroded to a certain extent, in addition, polycrystalline silicon doping conducting layer and hollow out construction wholly are protected by the mask, also make the passivation performance of second face obtain improving.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a back contact solar cell according to an embodiment of the present application;
fig. 2 is a schematic diagram illustrating an isolation region formed in a method for manufacturing a back contact solar cell according to an embodiment of the present application;
fig. 3 is a schematic diagram illustrating a mask formed in a method for manufacturing a back contact solar cell according to an embodiment of the present application;
fig. 4 is a schematic diagram of a suede structure and an anti-reflection layer formed in a method for manufacturing a back contact solar cell according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a back contact solar cell formed in the method for manufacturing a back contact solar cell according to an embodiment of the present application;
fig. 6 is a schematic diagram of a manufacturing process of a photovoltaic module according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present application.
Reference numerals illustrate:
100. a back contact solar cell;
10. a substrate; 20. tunneling oxide layer; 30. a polysilicon doped conductive layer; 31. a first doped region; 32. a second doped region; 40. an inner diffusion layer; 50. an isolation region; 51. a hollow structure; 60. masking; 70. a suede structure; 80. an antireflection film; 90. a passivation layer; 91. a first passivation layer; 92. a second passivation layer; 93. alloy doped contacts; 94. a first electrode; 95. a second electrode;
f-a first surface; s-a second face; c-side; o-center line; y-a preset area;
200. a photovoltaic module; 210. half-cell battery; 211. a head end; 212. and a tail end.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
The back contact solar cell, the manufacturing method, the photovoltaic module and the manufacturing method according to the embodiment of the application are described below with reference to the accompanying drawings.
Fig. 1 is a schematic flow chart of a method for manufacturing a back contact solar cell according to an embodiment of the application. Fig. 2 is a schematic diagram of forming an isolation region in a method for manufacturing a back contact solar cell according to an embodiment of the present application, fig. 3 is a schematic diagram of forming a mask in a method for manufacturing a back contact solar cell according to an embodiment of the present application, fig. 4 is a schematic diagram of forming a suede structure and an anti-reflection layer in a method for manufacturing a back contact solar cell according to an embodiment of the present application, and fig. 5 is a schematic diagram of a structure of a back contact solar cell formed in a method for manufacturing a back contact solar cell according to an embodiment of the present application.
Referring to fig. 1 to 5, the method for manufacturing a back contact solar cell according to an embodiment of the present application includes:
s10, sequentially stacking a tunneling oxide layer 20 and a polysilicon doped conductive layer 30 on a first surface F of the substrate 10, wherein a plurality of hollow structures 51 penetrating through the tunneling oxide layer 20 and the polysilicon doped conductive layer 30 are arranged on the polysilicon doped conductive layer 30, so that the first surface F of the substrate 10 is exposed to the outside.
S20, forming a mask 60 on the polysilicon doped conductive layer 30, wherein the mask 60 covers the polysilicon doped conductive layer 30 and the hollow structure 51.
S30, forming a textured structure 70 on a second surface S of the substrate 10, forming an anti-reflective film 80 on the textured structure 70, and removing the mask 60, wherein the second surface S and the first surface F are disposed opposite to each other.
S40, forming a passivation layer 90 on one side of a first surface F of the substrate 10, and forming an alloy doped contact portion 93 penetrating through the passivation layer 90 at a position corresponding to the hollow structure 51 on the first surface F.
By forming the mask 60 covering the polysilicon doped conductive layer 30 and the hollow structure 51 on the polysilicon doped conductive layer 30, the mask 60 can protect the hollow structure 51 and the polysilicon doped conductive layer 30 integrally in the process of forming the suede structure 70 on one side of the second surface S, so that etching liquid can not damage the hollow structure 51 of the first surface F and the polysilicon doped conductive layer 30 in the process of making the second surface S, the situation that the open-circuit voltage of the back contact solar cell is lower due to corrosion of the hollow structure 51 can be avoided to a certain extent, and in addition, the polysilicon doped conductive layer 30 and the hollow structure 51 are protected integrally by the mask 60, so that the passivation performance of the second surface S is improved.
In an embodiment of the present application, referring to fig. 2, the substrate 10 includes a first surface F and a second surface S disposed opposite to each other, and a plurality of side surfaces C adjacent between the first surface F and the second surface S. It can be understood that the polysilicon doped conductive layer 30 is provided with a plurality of hollow structures 51 penetrating through the tunneling oxide layer 20 and the polysilicon doped conductive layer 30, so that the first surface F of the substrate 10 is exposed to the outside, that is, the hollow structures 51 are through groove structures, and a part of the structures of the first surface F of the substrate 10 is exposed to the outside through the hollow structures 51. Of course, since the second doped regions 32 of the back-contact solar cell 100 are formed in the hollow structures 51 (refer to fig. 5 described later), the number of the hollow structures 51 is plural (only one hollow structure 51 and the first doped regions 31 on both sides of the hollow structure 51 are shown in fig. 5), and the second doped regions are in a stripe-like structure when viewed from above and are disposed on the first surface F side of the substrate 10 at intervals along the left-right direction shown in the drawing of fig. 5.
Referring to fig. 3, the covering of the polysilicon doped conductive layer 30 and the hollowed-out structure 51 by the mask 60 means that the mask 60 covers the polysilicon doped conductive layer 30, and covers the side walls of the hollowed-out structure 51 (through groove) and the positions corresponding to the hollowed-out structure on the first surface F.
Referring to fig. 5, an alloy doped contact 93 penetrating the passivation layer 90 is formed on the first surface F at a position corresponding to the hollowed-out structure 51, and it is understood that a gap should be formed between the alloy doped contact 93 and the polysilicon doped conductive layer 30 to avoid electric leakage.
Further, in step S10, the step of sequentially stacking the tunnel oxide layer 20 and the polysilicon doped conductive layer 30 on the first surface F of the substrate 10 includes:
sequentially stacking a tunneling oxide material layer and a polysilicon doping material layer on a first surface F of the substrate 10;
removing the phosphosilicate glass PSG formed on the side surface and the second surface S of the substrate 10;
removing the phosphosilicate glass and a portion of the polysilicon doped material layer at a predetermined location on the first surface F of the substrate 10;
and removing another part of the polysilicon doped material layer and the tunneling oxide material layer at the preset position on the first surface F of the substrate 10, etching the polysilicon doped material layer and the tunneling oxide material layer to the inside of the second surface S of the substrate 10 (etching and removing the inner diffusion layer 40 at the position) to form a hollowed-out structure 51, and removing the polysilicon doped material layer which is plated around on the second surface S and the side surface C of the substrate 10. Of course, the preset position here is actually a position corresponding to the second doped region 32, which is slightly larger than the second doped region 32, to form an isolation region 50, which will be described later, between the first doped region 31 and the second doped region 32.
In the embodiment of the present application, in step S20, the step of forming the mask 60 on the polysilicon doped conductive layer 30 includes:
a masking material layer is formed on each surface of the substrate 10, the masking material layer covers the polysilicon doped conductive layer 30 and the hollowed-out structure 51, and the masking material layer on the side C and the second surface S of the substrate 10 is removed in a chain machine. The thickness of the mask material layer may be in the range of 20nm to 50nm, i.e. the thickness of the finally formed mask 60 is in the range of 20nm to 50nm.
Mask 60 comprises at least one of silicon nitride, silicon oxynitride, silicon oxide.
In the embodiment of the present application, in step S30, the step of removing the mask 60 includes removing the mask 60 with an HF solution in a slot machine.
Further, in step S40, the step of forming the alloy doped contact 93 penetrating the passivation layer 90 at the position corresponding to the hollow structure 51 on the first surface F specifically includes:
referring to fig. 5, passivation layer material on the passivation layer 90 corresponding to the hollow structure 51 is removed to partially expose the hollow structure 51.
An alloy doped contact portion 93 is formed on the substrate 10 at a position corresponding to the hollow structure 51, and a second electrode 95 electrically connected to the alloy doped contact portion 93 is fabricated in the hollow structure 51, and the alloy doped contact portion 93 and each inner sidewall of the hollow structure 51 have a space therebetween.
In addition, a step of forming the first electrode 94 on the polysilicon doped conductive layer 30 is further included after forming the second electrode 95.
Further, the step of forming the alloy doped contact 93 at a position corresponding to the hollow structure 51 on the substrate 10, and fabricating the second electrode 95 electrically connected to the alloy doped contact 93 in the hollow structure 51 includes:
an aluminum paste is printed in the exposed hollowed-out structure 51 and sintered at a temperature of 700 ℃ or higher to form a second electrode 95 and an al—si alloy doped contact 93, as shown in fig. 5.
The following describes a method for manufacturing a back contact solar cell according to an embodiment of the present application with reference to a specific example, where the method includes:
step one, etching (cleaning) the substrate 10 using an acid or alkali polishing solution to remove contaminants and cutting damage on the substrate 10. A tunnel oxide material layer (e.g., a silicon oxide layer) is formed on the first side F of the substrate 10 by, for example, a thermal oxidation method, and a doped polysilicon material layer is formed on the tunnel oxide material layer, in which process an inner diffusion layer 40 is formed inside the first side F of the substrate 10.
And step two, removing PSG on the second surface S and the side surface by winding plating in a chain machine, removing PSG on a preset area (an area corresponding to the second doping area 32 is slightly larger than the second doping area 32, namely an area corresponding to a hollowed-out structure) on the first surface by using a laser or photoetching technology, and removing part of the thickness of the doped polysilicon material layer on the preset area.
The etching is performed on the film layer on the preset area on the first surface F side of the substrate 10 by using an alkaline etching solution such as KOH, TMAH, etc., and the etched film layer includes a doped polysilicon material layer, a tunneling oxide material layer, and an inner diffusion layer 40, so that a hollowed-out structure 51 is formed on the first surface F of the substrate 10, so that the first surface F of the substrate 10 is exposed to the outside, a structure as shown in fig. 2 is formed, and a polysilicon doped conductive layer 30 is formed at the same time, where the polysilicon doped conductive layer 30 forms the first doped area 31 of the back contact solar cell 100.
Step three, forming a mask 60 on the polysilicon doped conductive layer 30, wherein the mask 60 may be SiNx, siOxNy, siO 2 At least one of, mask 60 covers polysilicon doped conductive layer 30,and protect the hollowed-out structure 51, the mask 60 is used for protecting the film layer on the first surface F side of the substrate 10 in the subsequent texturing process. The thickness of mask 60 may be 20nm-50nm, thereby forming the structure shown in fig. 3.
Fourth, a textured structure 70 and an antireflection film 80 are formed on the second surface S of the substrate 10, and the antireflection film 80 is a texture structure for reducing light reflection. After the formation of the anti-reflective film 80, the mask 60 is removed with an HF solution in a slot machine. Forming the structure shown in fig. 4.
Step five, sequentially depositing a first passivation layer 91 and a second passivation layer 92 on the polysilicon doped conductive layer 30 and the hollow structure 51 to form a passivation layer 90. The first passivation layer 91 and the second passivation layer 92 may be Al 2 O 3 、SiNx、SiOxNy、SiO 2 A single layer or a stack of dielectric films.
And step six, removing the passivation layer material on the passivation layer 90 at the position corresponding to the hollow structure 51 by adopting a laser etching method so as to expose the hollow structure 51 locally.
An aluminum paste is printed in the hollowed-out structure 51 and sintered at a temperature of 700 ℃ or higher to form a second electrode 95 and an Al-Si alloy doped contact 93 (Al-BSF doped layer). It will be appreciated that during sintering, the aluminum metal and silicon are miscible to form the Al-Si alloy doped contact 93, i.e., al_BSF layer.
Step seven, the first electrode 94 is printed on the polysilicon doped conductive layer 30, specifically, during the sintering process, the metal paste of the first electrode 94 burns through the passivation layer 90 and contacts the polysilicon doped conductive layer 30, but does not penetrate the tunnel oxide layer 20. A back contact solar cell 100 as shown in fig. 5 is formed.
It is understood that the second doped region 32 of the back contact solar cell 100 does not have the inner diffusion layer 40, and the second doped region 32 is isolated from the first doped region 31 by the isolation region 50. Specifically, the second doped region 32 is located in the hollow structure 51 and forms a space with the first doped region 31, that is, the isolation region 50, where the isolation region 50 can isolate the first doped region 31 from the second doped region 32 to prevent leakage.
In a second aspect, the present application provides a back contact solar cell 100 manufactured by the method for manufacturing a back contact solar cell described above.
Referring to fig. 5, the back contact solar cell of the embodiment of the present application includes a substrate 10, a tunnel oxide layer 20, a polysilicon doped conductive layer 30, a textured structure 70, an anti-reflective film 80, a passivation layer 90, an alloy doped contact 93, a first electrode 94, and a second electrode 95.
The tunneling oxide layer 20 and the polysilicon doped conductive layer 30 are sequentially stacked on the first surface F of the substrate 10, and the tunneling oxide layer 20 and the polysilicon doped conductive layer 30 are provided with a hollow structure 51, and the hollow structure 51 penetrates through the tunneling oxide layer 20 and the polysilicon doped conductive layer 30, and exposes the first surface F of the substrate 10 to the outside.
The polysilicon doped conductive layer 30 is used as the first doped region 31, and the alloy doped contact portion 93 is disposed on the first surface F of the substrate 10 at a position corresponding to the hollowed-out structure 51, and is used as the second doped region 32 of the back contact solar cell 100. The first surface F side of the substrate 10 is provided with the first electrode 94 and the second electrode 95, the first electrode 94 is in contact with the polysilicon doped conductive layer 30, and the second electrode 95 is in contact with the alloy doped contact 93. Of course, it is understood that the second doped region 32 is isolated from the first doped region 31 by the isolation region 50 to prevent leakage. The passivation layer 90 may cover a first side of the polysilicon doped conductive layer 30 facing away from the substrate 10, and cover a portion of the first surface F exposed to the outside.
The third aspect of the embodiment of the application provides a manufacturing method of a photovoltaic module, which comprises the manufacturing method of the back contact solar cell.
Fig. 6 is a schematic diagram illustrating a manufacturing process of the photovoltaic module 200 according to an embodiment of the present application.
Referring to fig. 6, in addition to the aforementioned method for manufacturing a back contact solar cell, the method for manufacturing a photovoltaic module further includes:
the back contact solar cell 100 is cut into half-cells 210, and the half-cells 210 include a head end 211 cut and a tail end 212 arranged opposite to the head end 211;
at least two half-cells 210 are sequentially overlapped end to form the photovoltaic module 200, and the tail end 212 of one half-cell 210 is blocked on the light receiving side of the head end 211 of the other half-cell 210 in the two adjacent half-cells 210. In particular, in the photovoltaic module 200 of fig. 6, the trailing end 212 of the half cell 210 located on the left side of the drawing is blocked from the leading end 211 (blocked, shown in phantom) of the half cell 210 located on the right side of the drawing. Of course, it is understood that the case where the photovoltaic module 200 includes two half-cells 210 is illustrated in fig. 6, and the case where the half-cells 210 are plural is similar, and will not be described herein.
With continued reference to fig. 6, each back contact solar cell 100 is laser cut into two half-cells 210 along the center line O, and in the conventional shingle assembly process, the laser cut portions, i.e., the head ends 211, of the two half-cells 210 are directly exposed to the outside, which may result in the same generation of carriers at the edges of the half-cells 210, resulting in a large recombination of the edge positions.
In the method of the embodiment of the present application, one of the half-cells 210 (the half-cell 210 on the left side of the drawing) is rotated 180 degrees, and the tail end 212 side of the left half-cell 210 is covered over the head end 211 of the right half-cell 210, so as to block the laser cutting position (the head end 211) of the right half-cell 210, so that the head end 211 of the right half-cell 210, i.e., the laser cutting position, cannot be illuminated, and therefore, carriers cannot be excited.
In the two adjacent half cells 210, the tail end 212 of one half cell 210 shields the head end 211 of the other half cell 210. While, for the half cell 210 positioned at the uppermost side of the photovoltaic module 200, it is necessary to individually shade the head end 211 thereof with black material to minimize recombination of laser cutting positions. Thereby reducing efficiency losses of the head end 211 in each half cell 210 and improving efficiency of the entire photovoltaic module 200.
Fig. 7 is a schematic structural diagram of a photovoltaic module 200 according to an embodiment of the present application.
Referring to fig. 7, a fourth aspect of the present application provides a photovoltaic module 200, where the photovoltaic module 200 is manufactured by using the manufacturing method of the photovoltaic module described above. In fig. 7, the photovoltaic module 200 includes two half-cells 210 as an example, and the case that the number of half-cells 210 is greater is similar, and will not be described here again.
The photovoltaic module 200 includes a plurality of half-cells 210, and the half-cells 210 include a head end 211 cut and a tail end 212 disposed opposite to the head end 211.
At least two half-cells 210 overlap end to end in turn, and in two adjacent half-cells 210, the tail end 212 of one half-cell 210 is blocked at the light receiving side of the head end 211 of the other half-cell 210. The light-receiving side is here, for example, the side of the second side S of the back-contact solar cell.
For the case that the number of the half cells 210 is more than two, the plurality of half cells 210 form an arrangement mode of the shingle assembly, that is, the tail end 212 of the first half cell 210 is placed in parallel above the cut edge (that is, the head end 211) of the second half cell 210, and the arrangement principle is that the cut edge (the head end 211) of the second half cell 210 is completely blocked. The edge of the other side of the second half cell 210 that is not cut (tail end 212) is placed over the cut edge of the third half cell 210 (head end 211) for shielding. The individual half-cells 210 are connected in series in sequence to form a full back solar cell assembly, i.e., the photovoltaic assembly 200. In the photovoltaic module 200, the cutting edge (head end 211) of the uppermost half cell 210, i.e., the first half cell 210, is shielded by the black material, and carriers are prevented from being generated at one side of the cutting edge, so as to reduce carrier recombination caused by cutting damage.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (12)
1. A method for manufacturing a back contact solar cell, comprising:
sequentially laminating a tunneling oxide layer and a polysilicon doped conductive layer on a first surface of a substrate, wherein the polysilicon doped conductive layer is provided with a plurality of hollowed-out structures penetrating through the tunneling oxide layer and the polysilicon doped conductive layer so as to expose the first surface of the substrate to the outside;
forming a mask on the polysilicon doped conductive layer, wherein the mask covers the polysilicon doped conductive layer and the hollow structure;
forming a suede structure on a second surface of the substrate, forming an anti-reflection film on the suede structure, and removing the mask, wherein the second surface and the first surface are oppositely arranged;
and forming a passivation layer on one side of the first surface of the substrate, and forming an alloy doped contact part penetrating through the passivation layer at a position corresponding to the hollowed-out structure on the first surface.
2. The method of claim 1, wherein the step of forming a mask on the polysilicon doped conductive layer comprises:
forming a mask material layer on each surface of the substrate, wherein the mask material layer covers the polysilicon doped conductive layer and the hollow structure;
the masking material layer on the side of the substrate and the second side is removed in a chain machine, the side of the substrate being adjacent between the first side and the second side.
3. The method of claim 2, wherein the mask comprises at least one of silicon nitride, silicon oxynitride, and silicon oxide.
4. The method for manufacturing a back contact solar cell according to claim 2, wherein the thickness of the mask is 20nm-50nm.
5. The method of claim 1, wherein the removing the mask comprises:
the mask is removed in a slot machine with an HF solution.
6. The method of any one of claims 1-5, wherein the forming an alloy doped contact through the passivation layer at a location on the first side corresponding to the hollowed-out structure specifically comprises:
removing passivation layer materials on the passivation layer at positions corresponding to the hollow structures so as to expose the hollow structures locally;
and forming an alloy doped contact part at a position on the substrate corresponding to the hollow structure, and manufacturing a second electrode electrically connected with the alloy doped contact part in the hollow structure, wherein the alloy doped contact part and each inner side wall of the hollow structure have a space.
7. The method of fabricating a back contact solar cell according to claim 6, wherein the forming an alloy doped contact on the substrate at a position corresponding to the hollow structure, and fabricating a second electrode electrically connected to the alloy doped contact in the hollow structure, comprises:
and printing aluminum paste in the exposed hollow structure, and sintering at the temperature of more than 700 ℃ to form the second electrode and form an Al-Si alloy doped contact part.
8. The method for manufacturing a back contact solar cell according to any one of claims 1 to 3, wherein the step of sequentially stacking a tunnel oxide layer and a polysilicon doped conductive layer on the first surface of the substrate comprises:
sequentially stacking a tunneling oxide material layer and a polysilicon doping material layer on the first surface of the substrate;
removing the phosphosilicate glass formed on the side surface and the second surface of the substrate;
removing the phosphosilicate glass and a part of the polysilicon doping material layer at a preset position on the first surface of the substrate;
and removing the other part of the polysilicon doped material layer and the tunneling oxide material layer at the preset position on the first surface of the substrate, etching the tunneling oxide material layer to the inside of the second surface of the substrate to form the hollowed-out structure, and removing the polysilicon doped material layer which is plated around on the second surface and the side surface of the substrate.
9. A back contact solar cell fabricated by the method of any one of claims 1-8.
10. A method for manufacturing a photovoltaic module, comprising the method for manufacturing a back contact solar cell according to any one of claims 1 to 8.
11. The method of manufacturing a photovoltaic module according to claim 10, further comprising:
the back contact type solar cell is cut into half-piece cells, and the half-piece cells comprise a head end formed by cutting and a tail end arranged opposite to the head end;
and sequentially overlapping at least two half-cells end to form the photovoltaic module, wherein the tail end of one half-cell is blocked at the light receiving side of the head end of the other half-cell in two adjacent half-cells.
12. A photovoltaic module, characterized in that the photovoltaic module is manufactured by the manufacturing method of the photovoltaic module according to claim 10 or 11.
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| CN202311018393.4A CN116914027A (en) | 2023-08-11 | 2023-08-11 | Back contact type solar cell and manufacturing method thereof, photovoltaic module and manufacturing method thereof |
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| CN202311018393.4A CN116914027A (en) | 2023-08-11 | 2023-08-11 | Back contact type solar cell and manufacturing method thereof, photovoltaic module and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276361A (en) * | 2023-11-22 | 2023-12-22 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276361A (en) * | 2023-11-22 | 2023-12-22 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
| CN117276361B (en) * | 2023-11-22 | 2024-02-02 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
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