CN116913962A - GaN device and preparation method thereof - Google Patents

GaN device and preparation method thereof Download PDF

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Publication number
CN116913962A
CN116913962A CN202311120237.9A CN202311120237A CN116913962A CN 116913962 A CN116913962 A CN 116913962A CN 202311120237 A CN202311120237 A CN 202311120237A CN 116913962 A CN116913962 A CN 116913962A
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metal electrode
gate metal
gate
gan device
substrate
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CN116913962B (en
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张安邦
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Shanghai Xinwei Semiconductor Co ltd
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Shanghai Xinwei Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention provides a GaN device and a preparation method thereof, wherein a first gate metal electrode and a second gate metal electrode with different work functions are formed, and the second gate metal electrode is positioned at the periphery of the first gate metal electrode with a larger work function, so that the GaN device has different micro-area gate control capability, and the GaN device with different local threshold voltages is formed, so that the g of the GaN device is formed m ‑V GS The peak interval in the characteristic curve widens, and the linearity of the GaN device is improved.

Description

GaN device and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a GaN device and a preparation method thereof.
Background
The microwave millimeter wave power amplifier is an important component in communication systems such as a base station, a satellite and the like, and with the rapid development of the wireless communication market, higher requirements are put on the performance of a power amplifying device, such as high temperature, high frequency, high power, low noise, high efficiency and the like. Gallium nitride (GaN) which is a wide-bandgap semiconductor material is used as a typical representation of third-generation semiconductor materials, has the excellent characteristics of large bandgap, high voltage resistance, high temperature resistance, radiation resistance, high efficiency and easiness in forming high-quality heterostructures, and is very suitable for manufacturing high-temperature, high-frequency, high-power and radiation-resistant radio-frequency electronic devices.
The high electron mobility transistor (High Electron Mobility Transistor, HEMT for short) is a wide bandgap semiconductor device with high-concentration two-dimensional electron gas (Two Dimensional Electron Gas, 2DEG for short), has the characteristics of high output power density, high temperature resistance, high stability and high breakdown voltage, and has great application potential in the field of power electronic devices.
In recent years, performance of GaN HEMT is continuously improved, but linearity of GaN device eventually limits improvement of power density and efficiency in applications of wireless base station, satellite communication, radar, etc. In the millimeter wave range, the working frequency is generally increased by reducing the gate length, and for a conventional planar GaN HEMT device, the device is obviously influenced by factors such as short channel effect, gate leakage, increase of source drive resistance and the like, and the transconductance (gm) curve of the device, which is shown as the transfer characteristic, is prematurely reduced, so that the linearity of the GaN device is deteriorated. In order to meet the requirement of the modern communication system on the linearity of the GaN device, the linearity of the GaN device needs to be effectively optimized and improved.
Therefore, it is necessary to provide a GaN device and a method of manufacturing the same.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a GaN device and a method for manufacturing the same, which are used for solving the problem of linearity of the GaN device in the prior art.
To achieve the above and other related objects, the present invention provides a GaN device comprising:
a substrate comprising a GaN heterojunction;
the source metal electrode is positioned at one end of the substrate, and the drain metal electrode is positioned at the other end of the substrate;
the gate metal electrode is positioned on the substrate, is positioned between the source metal electrode and the drain metal electrode, and comprises a first gate metal electrode and a second gate metal electrode, wherein the work function of the first gate metal electrode is larger than that of the second gate metal electrode, and the second gate metal electrode is positioned on the periphery of the first gate metal electrode.
Optionally, there are a plurality of first gate metal electrodes arranged at intervals along the gate width direction.
Optionally, the lengths of the first gate metal electrodes are the same, and the widths of the first gate metal electrodes are the same.
Optionally, the lengths of the first gate metal electrodes are different, and the widths of the first gate metal electrodes are the same or different, or the lengths of the first gate metal electrodes are the same, and the widths of the first gate metal electrodes are different.
Optionally, the variation of the first gate metal electrode of different length or width comprises an increment or decrement.
Optionally, the topography of the first gate metal electrode comprises a square, a circle, or an ellipse.
Optionally, the material of the first gate metal electrode includes one of Ni metal, pt metal, ir metal and Se metal, and the material of the second gate metal electrode includes one of Ti metal, al metal, zn metal and W metal.
The invention also provides a preparation method of the GaN device, which comprises the following steps:
providing a substrate containing a GaN heterojunction;
preparing a source metal electrode at one end on the substrate, preparing a drain metal electrode at the other end on the substrate, and forming a gate metal electrode on the substrate, wherein the gate metal electrode is positioned between the source metal electrode and the drain metal electrode and comprises a first gate metal electrode and a second gate metal electrode, the work function of the first gate metal electrode is larger than that of the second gate metal electrode, and the second gate metal electrode is positioned at the periphery of the first gate metal electrode.
Alternatively, the method of forming the first gate metal electrode includes an electron beam evaporation method or a magnetron sputtering method; the method for forming the second gate metal electrode comprises an electron beam evaporation method or a magnetron sputtering method; the first gate metal electrode is formed by one of Ni metal, pt metal, ir metal and Se metal, and the second gate metal electrode is formed by one of Ti metal, al metal, zn metal and W metal.
Optionally, a plurality of first gate metal electrodes are formed along the gate width direction, wherein the first gate metal electrodes are arranged at intervals; wherein the lengths of the first gate metal electrodes are the same or different, and the widths of the second gate metal electrodes are the same or different; the variation of the first gate metal electrode of different length or width includes an increment or decrement.
As described above, the GaN device and the preparation method thereof of the invention can enable the GaN device to have different micro-area gate control capability by forming the first gate metal electrode and the second gate metal electrode with different work functions and enabling the second gate metal electrode to be positioned at the periphery of the first gate metal electrode with larger work function, and form the GaN device with different local threshold voltages so as to enable g of the GaN device m -V GS The peak interval in the characteristic curve widens, and the linearity of the GaN device is improved.
Drawings
Fig. 1 is a schematic diagram of a process flow for manufacturing a GaN device according to an embodiment of the invention.
Fig. 2 is a schematic top view of a GaN device with 1 first gate metal electrode according to an embodiment of the invention.
FIG. 3 is a schematic cross-sectional view of the structure A-A' of FIG. 2.
Fig. 4a to 4e are schematic top view structures of GaN devices with first gate metal electrodes according to embodiments of the invention.
FIG. 5 shows g of a GaN device having both a first gate metal electrode and a second gate metal electrode and a GaN device having only the second gate metal electrode in an embodiment of the invention m -V GS Comparison of characteristic curves.
Description of element reference numerals
100. Substrate
200. Source metal electrode
300. Drain metal electrode
400. Gate metal electrode
401. First gate metal electrode
402. Second gate metal electrode
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures, including embodiments in which the first and second features are formed in direct contact, as well as embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact, and further, when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intervening layers.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed at will, and the layout of the components may be more complex.
As shown in fig. 2 to 4e, the present embodiment provides a GaN device, which includes a substrate 100, a source metal electrode 200, a drain metal electrode 300, and a gate metal electrode 400, wherein the substrate 100 includes a GaN heterojunction; the source metal electrode 200 is located at one end of the substrate 100, and the drain metal electrode 300 is located at the other end of the substrate 100; the gate metal electrode 400 is located on the substrate 100, and the gate metal electrode 400 is located between the source metal electrode 200 and the drain metal electrode 300, and includes a first gate metal electrode 401 and a second gate metal electrode 402, where the work function of the first gate metal electrode 401 is greater than the work function of the second gate metal electrode 402, and the second gate metal electrode 402 is located at the periphery of the first gate metal electrode 401.
The GaN device of the present embodiment forms the GaN device with different local threshold voltages by forming the first gate metal electrode 401 and the second gate metal electrode 402 with different work functions and positioning the second gate metal electrode 402 at the periphery of the first gate metal electrode 401 with a larger work function, thereby enabling the GaN device to have different micro-region gate control capability, so as to enable g of the GaN device m -V GS And the peak interval in the characteristic curve is widened, so that the linearity of the GaN device is improved.
As shown in fig. 5, curve a represents g of the GaN device having the first gate metal electrode 401 and the second gate metal electrode 402 in the present embodiment m -V GS Characteristic curve b represents g of the GaN device having only the second gate metal electrode 402 m -V GS As can be seen from fig. 5, after the first gate metal electrode 401 having a larger work function is introduced into the second gate metal electrode 402, the threshold voltage of the GaN device can be increased so that g of the GaN device m -V GS The peak interval in the characteristic curve widens, so that the linearity of the GaN device is improved.
Specifically, the substrate 100 includes at least a bottom-up stack ofA substrate (not shown), a GaN channel layer (not shown), and a barrier layer (not shown), wherein the substrate may include, for example, a silicon carbide (SiC) substrate, a silicon (Si) substrate, an aluminum oxide (Al) 2 O 3 ) A substrate, an aluminum nitride (AlN) substrate, a gallium nitride (GaN) substrate, or the like, may be specifically selected as needed. The barrier layer may include, for example, an aluminum gallium nitride (AlGaN) barrier layer, etc., which in combination with the GaN channel layer may constitute a GaN heterojunction of AlGaN/GaN to provide a two-dimensional electron gas (2 DEG), but the structure of the substrate 100 is not limited thereto, and may include, for example, a nucleation layer, a buffer layer, etc., between the substrate and the GaN channel layer, and the choice of the substrate 100 is not excessively limited herein.
As an example, there are a plurality of first gate metal electrodes 401 arranged at intervals in the gate width direction (Y direction).
Specifically, fig. 2 is a schematic structural view of the first gate metal electrode 401 having only 1, but not limited thereto, and fig. 4a to 4e are schematic structural views of the first gate metal electrode 401 having 3 different structures in a direction along the gate width (Y direction).
Fig. 3 is a schematic cross-sectional view along A-A' in fig. 2, in which fig. 3, the second gate metal electrode 402 is formed to cover the top of the first gate metal electrode 401 for the convenience of process preparation, but not limited thereto, and in another embodiment, the second gate metal electrode 402 may be located only at the periphery of the first gate metal electrode 401 to surround the sidewall of the first gate metal electrode 401, which is not limited thereto.
It is to be understood that the number of the first gate metal electrodes 401 is not limited to 1 or 3, but may be 2, 4, 5, etc. in the direction along the gate width (Y direction), and may be specifically selected as needed, without being excessively limited thereto.
Wherein when there are a plurality of the first gate metal electrodes 401, the lengths (in the X direction) of the first gate metal electrodes 401 may be the same, and the widths (in the Y direction) of the first gate metal electrodes 401 may be the same, as shown in fig. 4a.
In another embodiment, as shown in fig. 4b and 4c, the lengths (in the X direction) of the first gate metal electrodes 401 may be different, and the widths (in the Y direction) of the first gate metal electrodes 401 may be the same, and the variation of the first gate metal electrodes 401 of different lengths along the gate width direction (in the Y direction) is increased as in fig. 4b, or decreased as in fig. 4c.
In yet another embodiment, as shown in fig. 4d and 4c, the length (in the X direction) of the first gate metal electrode 401 may be the same, and the width (in the Y direction) of the first gate metal electrode 401 may be different, and the variation of the first gate metal electrode 401 of different widths along the gate width direction (in the Y direction) is increased as in fig. 4d, or decreased as in fig. 4e.
As an example, the topography of the first gate metal electrode 401 may include a square, a circle, or an ellipse.
Specifically, the first gate metal electrode 401 may have the same morphology, or different morphologies, and may be specifically selected according to needs, which is not limited herein.
The number, morphology, distribution, etc. of the first gate metal electrodes 401 may be selected according to need, and are not excessively limited herein.
As an example, the material of the first gate metal electrode 401 may include one of Ni metal, pt metal, ir metal and Se metal, and the material of the second gate metal electrode 402 may include one of Ti metal, al metal, zn metal and W metal, and the selection of the materials of the first gate metal electrode 401 and the second gate metal electrode 402 is not limited herein.
Referring to fig. 1, the present embodiment also provides a method for manufacturing a GaN device, which may be manufactured by the method, but is not limited thereto, and in the present embodiment, the GaN device is directly manufactured by the method, so that details about the structure of the GaN device and the like are not described herein.
Referring to fig. 1 to 4e, the preparation of the GaN device may include the steps of:
s1: providing a substrate 100 comprising a GaN heterojunction;
s2: preparing a source metal electrode 200 at one end on the substrate 100 and preparing a drain metal electrode 300 at the other end on the substrate 100;
s3: forming a first gate metal electrode 401 on the substrate 100 and between the source metal electrode 200 and the drain metal electrode 300;
s4: a second gate metal electrode 402 is formed on the substrate 100 and on the periphery of the first gate metal electrode 401, and the work function of the first gate metal electrode 401 is greater than the work function of the second gate metal electrode 402.
Specifically, in the present embodiment, the source metal electrode 200 and the drain metal electrode 300 are formed on the substrate 100, and then the first gate metal electrode 401 and the second gate metal electrode 402 are formed, but in another embodiment, the first gate metal electrode 401 and the second gate metal electrode 402 may be formed first, and then the source metal electrode 200 and the drain metal electrode 300 may be formed, which is not limited herein and may be selected according to needs.
As an example, a method of forming the first gate metal electrode 401 may include an electron beam evaporation method or a magnetron sputtering method; the method of forming the second gate metal electrode 402 may include an electron beam evaporation method or a magnetron sputtering method.
Specifically, in preparing the first gate metal electrode 401, the steps and methods for forming the second gate metal electrode 402 may be the same as or different from those of the first gate metal electrode 401, and are not limited herein.
Regarding the structure, material and manufacturing process of the substrate 100, the source metal electrode 200 and the drain metal electrode 300, no limitation is made herein, and reference may be made to the conventional GaN device.
For the preparation of the first gate metal electrode 401 with different shapes, only when patterning a mask, for example, patterning windows with different shapes and distributions are formed by photolithography, which is not described herein.
The material of the first gate metal electrode 401 may include one of Ni metal, pt metal, ir metal and Se metal, and the material of the second gate metal electrode 402 may include one of Ti metal, al metal, zn metal and W metal.
As an example, 1 or several first gate metal electrodes 401 may be formed to be spaced apart in a gate width direction (Y direction); wherein the lengths (X-direction) of the first gate metal electrodes 401 are the same or different, and the widths (Y-direction) of the second gate metal electrodes 402 are the same or different; the variation of the first gate metal electrode 401 of different lengths or widths includes increasing or decreasing, as shown in fig. 4 a-4 e.
Further, after forming the source metal electrode 200, the drain metal electrode 300, and the gate metal electrode 400, a passivation protection layer (not shown) and an electrical connection layer (not shown) may be further included, which is not limited herein.
In summary, according to the GaN device and the preparation method thereof of the invention, the first gate metal electrode and the second gate metal electrode with different work functions are formed, and the second gate metal electrode is positioned at the periphery of the first gate metal electrode with a larger work function, so that the GaN device has different micro-area gate control capability, and the GaN device with different local threshold voltages is formed, so that g of the GaN device is formed m -V GS The peak interval in the characteristic curve widens, and the linearity of the GaN device is improved.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. A GaN device, the GaN device comprising:
a substrate comprising a GaN heterojunction;
the source metal electrode is positioned at one end of the substrate, and the drain metal electrode is positioned at the other end of the substrate;
the gate metal electrode is positioned on the substrate, is positioned between the source metal electrode and the drain metal electrode, and comprises a first gate metal electrode and a second gate metal electrode, wherein the work function of the first gate metal electrode is larger than that of the second gate metal electrode, and the second gate metal electrode is positioned on the periphery of the first gate metal electrode.
2. The GaN device of claim 1 wherein: the first gate metal electrodes are arranged at intervals along the gate width direction.
3. The GaN device of claim 2 wherein: the first gate metal electrodes have the same length and the first gate metal electrodes have the same width.
4. The GaN device of claim 2 wherein: the lengths of the first gate metal electrodes are different, and the widths of the first gate metal electrodes are the same or different, or the lengths of the first gate metal electrodes are the same, and the widths of the first gate metal electrodes are different.
5. The GaN device of claim 4 wherein: the variation of the first gate metal electrode of different length or width includes an increment or decrement.
6. The GaN device of claim 1 wherein: the morphology of the first gate metal electrode comprises square, round or oval shapes.
7. The GaN device of claim 1 wherein: the first gate metal electrode is made of one of Ni metal, pt metal, ir metal and Se metal, and the second gate metal electrode is made of one of Ti metal, al metal, zn metal and W metal.
8. A method for manufacturing a GaN device, comprising the steps of:
providing a substrate containing a GaN heterojunction;
preparing a source metal electrode at one end on the substrate, preparing a drain metal electrode at the other end on the substrate, and forming a gate metal electrode on the substrate, wherein the gate metal electrode is positioned between the source metal electrode and the drain metal electrode and comprises a first gate metal electrode and a second gate metal electrode, the work function of the first gate metal electrode is larger than that of the second gate metal electrode, and the second gate metal electrode is positioned at the periphery of the first gate metal electrode.
9. The method for manufacturing a GaN device according to claim 8, characterized in that: the method for forming the first gate metal electrode comprises an electron beam evaporation method or a magnetron sputtering method; the method for forming the second gate metal electrode comprises an electron beam evaporation method or a magnetron sputtering method; the first gate metal electrode is formed by one of Ni metal, pt metal, ir metal and Se metal, and the second gate metal electrode is formed by one of Ti metal, al metal, zn metal and W metal.
10. The method for manufacturing a GaN device according to claim 8, characterized in that: forming a plurality of first gate metal electrodes arranged at intervals along the gate width direction; wherein the lengths of the first gate metal electrodes are the same or different, and the widths of the second gate metal electrodes are the same or different; the variation of the first gate metal electrode of different length or width includes an increment or decrement.
CN202311120237.9A 2023-08-31 2023-08-31 GaN device and preparation method thereof Active CN116913962B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111194483A (en) * 2017-10-17 2020-05-22 三菱电机株式会社 Transistor with multiple metal gates
CN111584619A (en) * 2020-05-28 2020-08-25 浙江大学 GaN device and preparation method
CN113555427A (en) * 2020-04-24 2021-10-26 三星电子株式会社 High electron mobility transistor and method for manufacturing the same
CN113555430A (en) * 2021-07-07 2021-10-26 西安电子科技大学 HEMT device for realizing multi-threshold modulation technology through gradient gate and preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111194483A (en) * 2017-10-17 2020-05-22 三菱电机株式会社 Transistor with multiple metal gates
CN113555427A (en) * 2020-04-24 2021-10-26 三星电子株式会社 High electron mobility transistor and method for manufacturing the same
CN111584619A (en) * 2020-05-28 2020-08-25 浙江大学 GaN device and preparation method
CN113555430A (en) * 2021-07-07 2021-10-26 西安电子科技大学 HEMT device for realizing multi-threshold modulation technology through gradient gate and preparation method

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