CN116908141A

CN116908141A - Analysis device, analysis system, and portable information terminal

Info

Publication number: CN116908141A
Application number: CN202310380905.5A
Authority: CN
Inventors: 福泽英明; 水野友人; 柴田哲也
Original assignee: TDK Corp
Current assignee: TDK Corp
Priority date: 2022-04-19
Filing date: 2023-04-11
Publication date: 2023-10-20

Abstract

The present invention relates to an analysis device, an analysis system, and a portable information terminal. The analysis device is provided with: at least one magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and a light source that emits light, irradiates the analysis target sample with the light from the light source, and detects, with the at least one magnetic element, reflected light reflected by the analysis target sample or transmitted light transmitted through the analysis target sample.

Description

Analysis device, analysis system, and portable information terminal

Technical Field

The present invention relates to an analysis device, an analysis system, and a portable information terminal.

Background

As an analysis device using light, a raman spectroscopic device, an infrared spectroscopic device, and the like are known. For example, patent document 1 discloses a raman spectroscopic device. Further, for example, patent document 2 discloses an infrared spectroscopic device. In an analysis device using light, a photodetector for detecting light (electromagnetic wave) as an electrical signal is used. For example, the raman spectroscopic device described in patent document 1 detects light with a CCD (charge coupled device ). For example, the infrared spectroscopic device described in patent document 2 detects infrared rays with a bolometer.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2006-113021

Patent document 2: japanese patent laid-open No. 2000-275105

Disclosure of Invention

Technical problem to be solved by the invention

Several types of photodetectors are used for photodetection in spectroscopic devices, but there are problems such as difficulty in miniaturization. Therefore, in order to further develop an analysis device using light, a new breakthrough is sought.

The present invention has been made in view of the above-described problems, and an object thereof is to provide a novel and miniaturized analysis device, analysis system, and portable information terminal.

Technical scheme for solving technical problems

In order to solve the above problems, the following means are provided.

(1) The analysis device according to the first aspect includes: at least one magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and a light source that emits light, irradiates an analysis target sample with the light from the light source, and detects, with the at least one magnetic element, reflected light reflected by the analysis target sample or transmitted light transmitted through the analysis target sample.

(2) The analysis device according to the above embodiment may further include a beam splitter, and the reflected light or the transmitted light may be irradiated to the at least one magnetic element via the beam splitter.

(3) In the analysis device according to the above embodiment, the at least one magnetic element may be a plurality of magnetic elements, and the reflected light or the transmitted light may be irradiated to the plurality of magnetic elements via the beam splitter.

(4) The analysis device according to the above embodiment may further include a plurality of wavelength filters, wherein the at least one magnetic element is a plurality of magnetic elements, at least one of the plurality of magnetic elements is disposed so as to correspond to each of the plurality of wavelength filters, the reflected light or the transmitted light is irradiated to at least one of the magnetic elements disposed so as to correspond to each of the wavelength filters through each of the plurality of wavelength filters, and a transmission band of at least one of the plurality of wavelength filters is different from that of the other wavelength filters.

(5) In the analysis device according to the above embodiment, the light source may be a laser element that emits laser light.

(6) In the analysis device according to the above embodiment, the light source may include a plurality of laser elements that emit laser light, and the wavelength of the laser light emitted from at least one of the plurality of laser elements may be different from that of the other laser elements.

(7) In the analysis device according to the above embodiment, the laser element may emit light having a wavelength of 300nm to 2000 nm.

(8) An analysis system according to a second embodiment includes the analysis device according to the above embodiment, and an information storage device, and compares data of the reflected light or the transmitted light detected by the analysis device using the magnetic element with data stored in the information storage device to identify information of the analysis target sample.

(9) The portable information terminal according to the third embodiment includes: the analysis system according to the above embodiment, and a display monitor for displaying information of the analysis target sample.

ADVANTAGEOUS EFFECTS OF INVENTION

The analysis device, the analysis system, and the portable information terminal according to the above embodiments can be miniaturized.

Drawings

Fig. 1 is a block diagram of an analysis system of a first embodiment.

Fig. 2 is a block diagram of another example of the analysis system according to the first embodiment.

Fig. 3 is a cross-sectional view of the light detection device of the first embodiment.

Fig. 4 is a cross-sectional view of the magnetic element of the first embodiment.

Fig. 5A is a diagram for explaining a first mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 5B is a diagram for explaining a first mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 5C is a diagram for explaining a first mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 5D is a diagram for explaining a first mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 6A is a diagram for explaining a second mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 6B is a diagram for explaining a second mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 6C is a diagram for explaining a second mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 6D is a diagram for explaining a second mechanism of an operation example of the magnetic element of the first embodiment.

Fig. 7A is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 7B is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 7C is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 7D is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 8A is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 8B is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 8C is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 8D is a diagram for explaining another example of the operation of the magnetic element of the first embodiment.

Fig. 9 is a plan view of the photodetection device according to the first embodiment.

Fig. 10 is a sectional view of a light detection device of the second embodiment.

Fig. 11 is a sectional view of a light detection device of the third embodiment.

Fig. 12 is a plan view of a light detection device according to a third embodiment.

Fig. 13 is a block diagram of an analysis system of a fourth embodiment.

Fig. 14 is a block diagram of an analysis system of a fifth embodiment.

Fig. 15 is a block diagram of an analysis system of a sixth embodiment.

Fig. 16 is a schematic diagram of a portable information terminal using the analysis system of the sixth embodiment.

Description of symbols:

1. a light source of 1A 3996, a light detecting device of 2, 2A, 2B …, a sample setting portion of 3 …, a signal processing portion of 4 …, a magnetic element of 10 …, a first ferromagnetic layer of 11 …, a second ferromagnetic layer of 12 …, a spacer layer of 13 …, a buffer layer of 14 …, a seed layer of 15 …, a ferromagnetic layer of 16 …, a magnetic coupling layer of 17 …, a vertical magnetization induction layer of 18 …, a cover layer of 19 …, an insulating layer of 30 …, a light splitter of 50, 51 …, a filter of 60, 61, 62, 63 … wavelength, a laser element of 71, 72, 73 …, a circuit board of 91 …, an analog-to-digital converter of 92 …, an output terminal of 93 …, a wiring layer of 95 …, 96 … wiring, 97 … interlayer insulating film, 100A, 101, 102, 103 … analysis device, 200A, 201, 202, 203 … analysis system, 300 … portable information terminal, E1 … first electrode, E2 … second electrode, L1 ₁ 、L1 ₂ 、L1 ₃ 、L2 ₁ 、L2 ₂ 、L2 ₃ 、L2 _n … light, L2 … reflected light, L3 … transmitted light, ob … sample of analysis object, M11, M12, M16 … magnetization

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the drawings as appropriate. In the drawings used in the following description, for the sake of easy understanding of the features, portions to be characterized may be enlarged for convenience, and the dimensional proportions of the respective constituent elements may be different from actual ones. The materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited thereto, and can be appropriately modified and implemented within a range that achieves the effects of the present invention.

The direction is defined. The lamination direction of the magnetic element 10 is referred to as the z direction, one direction in the plane orthogonal to the z direction is referred to as the x direction, and the direction orthogonal to the x direction and the z direction is referred to as the y direction. Hereinafter, the +z direction may be expressed as "up", and the-z direction may be expressed as "down". The +z direction is a direction from the second electrode E2 toward the first electrode E1. The up and down direction is not necessarily consistent with the direction in which the force is applied.

First embodiment

Fig. 1 is a block diagram of an analysis system of a first embodiment. The analysis system 200 includes, for example, an analysis device 100 and an information storage device 110. The analysis system 200 compares the data of the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob detected by the magnetic element in the analysis apparatus 100 with the data stored in the information storage 110, and identifies the information of the analysis target sample Ob.

The analysis device 100 detects reflected light reflected by the analysis target sample Ob or transmitted light transmitted through the analysis target sample Ob. The analysis device 100 shown in fig. 1 detects the reflected light L2 reflected by the analysis target sample Ob. The analysis device 100 is, for example, a spectroscopic analysis device.

The information storage device 110 stores data. The information storage device 110 is, for example, an external memory. The access between the analysis device 100 and the information storage device 110 may be wireless or wired. In addition, as in the analysis system 200A shown in fig. 2, the information storage device 110 may be an internal memory housed in the analysis device 100A.

The analysis device 100 includes, for example, a light source 1, a light detection device 2, a sample setting unit 3, and a signal processing unit 4.

The light source 1 emits light L1. The analysis device 100 irradiates the analysis target sample Ob with light L1 from the light source 1. The light L1 from the light source 1 irradiates the analysis target sample Ob. The light in this specification includes not only visible light but also infrared rays having a longer wavelength than visible light or ultraviolet rays having a shorter wavelength than visible light. The wavelength of visible light is, for example, 380nm or more and less than 800nm. The wavelength of infrared light is, for example, 800nm to 1 mm. The wavelength of ultraviolet light is, for example, 200nm or more and less than 380nm.

The light source 1 may be a light source that emits light of a single wavelength, such as a laser element such as a laser diode, or may be a light source that emits light having a continuous spectrum, such as a white light source. For example, when the analysis device 100 is a raman spectroscopic device that analyzes a shift in wavelength of scattered light caused by the analysis target sample Ob, a laser element is preferably used as the light source 1. The laser element emits light having a wavelength of 300nm to 2000nm, for example. In addition, for example, in the case where the analysis device 100 is an infrared spectroscopic device that analyzes the absorption of infrared light by the analysis target sample Ob, it is preferable to use a light source that emits light having a continuous spectrum in the infrared region as the light source 1. The light source 1 is connected in use to a power source. The power supply may also be internal to the light source 1.

The sample setting unit 3 is a portion for setting the analysis target sample Ob. Details will be described later, but the sample mounting section 3 may be omitted. The sample Ob to be analyzed is not particularly limited, and is, for example, a chemical such as a drug, a cell, a virus, blood, or the like.

The light detection device 2 replaces the reflected light L2 reflected by the analysis target sample Ob with an electric signal. The specific structure of the light detection device 2 will be described later.

The signal S1 from the light detection device 2 is input to the signal processing unit 4. The signal processing section 4 includes, for example, a signal receiving section and a processor. The signal receiving section is an input terminal of the signal processing section 4. The signal receiving unit may further include an amplifier for amplifying a signal input to the input terminal, for example. The processor is, for example, a CPU (Central Processing Unit ). The processor detects the data of the reflected light L2 based on the signal S1 from the light detection device 2, for example, and collates the detected data of the reflected light L2 with the data stored in the information storage device 110. The signal processing unit 4 outputs the collation result to the outside, for example. The signal processing unit 4 may directly output the data of the detected reflected light L2 to the outside. For example, when the analysis device 100 is a raman spectroscopic device, the data of the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob detected by the analysis device 100 and the data stored in the information storage device 110 are raman spectra, for example. For example, when the analysis device 100 is an infrared spectroscopic device, the data of the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob detected by the analysis device 100 and the data stored in the information storage device 110 are, for example, IR spectra.

Fig. 3 is a sectional view of the light detection device 2 of the first embodiment. The photodetector 2 includes a magnetic element 10, a beam splitter 50, a lens R, a circuit board 91, and a wiring layer 95.

The circuit board 91 has, for example, an analog-digital converter 92 and an output terminal 93. The electric signal output from the magnetic element 10 is replaced with digital data by an analog-digital converter 92, and is output from an output terminal 93. The output terminal 93 is connected to the signal processing unit 4, for example.

The wiring layer 95 is formed on the circuit board 91, for example. The wiring layer 95 has a plurality of wirings 96. An interlayer insulating film 97 is provided between the plurality of wirings 96. The wiring 96 electrically connects each of the magnetic elements 10 to the circuit board 91 and each of the arithmetic circuits formed on the circuit board 91. Each of the magnetic elements 10 is connected to the circuit board 91 via, for example, a through-wire that penetrates the interlayer insulating film 97 in the z-direction. By shortening the distance between the wirings of each of the magnetic elements 10 and the circuit board 91, noise can be reduced.

The wiring 96 has conductivity. The wiring 96 is, for example, A1, cu, or the like. The interlayer insulating film 97 is an insulator that insulates between wirings or between elements of the multilayer wiring. The interlayer insulating film 97 is, for example, an oxide, nitride, or oxynitride of Si, A1, or Mg, and the same material as that of the insulating layer 30 described later can be used.

The magnetic element 10 is formed on the wiring layer 95, for example. The number of magnetic elements 10 is, for example, plural. The plurality of magnetic elements 10 are arranged in a row on the wiring layer 95, for example. The plurality of magnetic elements 10 may be arranged in a matrix. The magnetic element 10 is irradiated with reflected light reflected by the analysis target sample Ob or transmitted light transmitted through the analysis target sample Ob. The analysis device 100 detects reflected light reflected by the analysis target sample Ob or transmitted light transmitted through the analysis target sample Ob by using the magnetic element 10. The analysis device 100 according to the first embodiment detects the reflected light L2 reflected by the analysis target sample Ob by using the magnetic element 10 shown in fig. 3. Details of the magnetic element 10 are described later.

The lens R concentrates the light towards the magnetic element 10. The light collected through the lens R is irradiated to the magnetic element 10. In fig. 3, one magnetic element 10 is arranged below one lens R, but a plurality of magnetic elements 10 may be arranged below one lens R.

The spectroscope 50 splits the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob. The reflected light or the transmitted light is irradiated to the plurality of magnetic elements 10 via the beam splitter 50. For example, as shown in fig. 3, the beam splitter 50 splits the reflected light L2. The beam splitter 50 splits the reflected light L2 into light L2 for each wavelength, for example ₁ Light L2 ₂ Light L2 ₃ A wavelength-dispersive optical splitter of (a). The beam splitter 50 is, for example, a prism, a diffraction grating, or the like. The diffraction grating is, for example, a blazed diffraction grating, a holographic diffraction grating, or a laminar diffraction grating.

The magnetic element 10 is for detecting reflected light reflected by the sample Ob or transmitted through the sample ObOb. The plurality of magnetic elements 10 are irradiated with the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob through the spectroscope 50, respectively. The reflected light L2 reflected by the analysis target sample Ob is irradiated to each of the plurality of magnetic elements 10 shown in fig. 3 via the spectroscope 50. The plurality of magnetic elements 10 shown in fig. 3 are irradiated with light split by the beam splitter 50. For example, light L2 is irradiated to one magnetic element 10 ₁ Irradiating the other magnetic element 10 with light L2 ₂ The light L2 is irradiated to the further magnetic element 10 ₃ 。

Fig. 4 is a cross-sectional view of the magnetic element 10 of the first embodiment. In fig. 4, the direction of magnetization of the ferromagnetic body in an initial state described later is indicated by an arrow.

The magnetic element 10 has at least a first ferromagnetic layer 11, a second ferromagnetic layer 12, and a spacer layer 13. A spacer layer 13 is located between the first ferromagnetic layer 11 and the second ferromagnetic layer 12. The magnetic element 10 may have a buffer layer 14, a seed layer 15, a ferromagnetic layer 16, a magnetic coupling layer 17, a perpendicular magnetization induction layer 18, and a capping layer 19 in addition to these. The buffer layer 14, the seed layer 15, the ferromagnetic layer 16, and the magnetic coupling layer 17 are located between the second ferromagnetic layer 12 and the second electrode E2, and the perpendicular magnetization induction layer 18 and the capping layer 19 are located between the first ferromagnetic layer 11 and the first electrode E1. The periphery of the magnetic element 10 is covered by an insulating layer 30. The insulating layer 30 is located between the first electrode E1 and the second electrode E2.

The magnetic element 10 is, for example, an MTJ (Magnetic Tunnel Junction ) element in which the spacer layer 13 is made of an insulating material. The magnetic element 10 changes its resistance value when irradiated with light from the outside. The magnetic element 10 changes the resistance value in the z direction (resistance value when a current is caused to flow in the z direction) according to the relative change between the state of the magnetization M11 of the first ferromagnetic layer 11 and the state of the magnetization M12 of the second ferromagnetic layer 12. Such an element is also called a magnetoresistance effect element.

The first ferromagnetic layer 11 is a light detection layer whose magnetization state changes if light is irradiated from the outside. The first ferromagnetic layer 11 is also referred to as a magnetization free layer. The magnetization free layer is a layer containing a magnetic substance whose magnetization state changes when energy from a predetermined external source is applied. The predetermined external energy is, for example, light irradiated from the outside, current flowing in the lamination direction of the magnetic element 10, or an external magnetic field. The magnetization M11 of the first ferromagnetic layer 11 changes state according to the intensity of the irradiated light.

The first ferromagnetic layer 11 contains a ferromagnetic body. The first ferromagnetic layer 11 contains at least any one of magnetic elements such as Co, fe, and Ni. The first ferromagnetic layer 11 may contain an element such as B, mg, hf, gd together with the magnetic element described above. The first ferromagnetic layer 11 may be an alloy containing a magnetic element and a non-magnetic element, for example. The first ferromagnetic layer 11 may also be composed of a plurality of layers. The first ferromagnetic layer 11 is, for example, a CoFeB alloy, a laminate in which a CoFeB alloy layer is sandwiched between Fe layers, or a laminate in which a CoFeB alloy layer is sandwiched between CoFe layers. In general, "ferromagnetic" includes "ferrimagnetism". The first ferromagnetic layer 11 may also exhibit ferrimagnetism. On the other hand, the first ferromagnetic layer 11 may also exhibit ferromagnetism other than ferrimagnetism. For example, coFeB alloys exhibit ferromagnetism that is not ferrimagnetic.

The first ferromagnetic layer 11 may be an in-plane magnetization film having an easy axis in the in-plane direction (any direction in the xy plane) of the film, or may be a perpendicular magnetization film having an easy axis in the in-line direction (the z direction) of the film.

The film thickness of the first ferromagnetic layer 11 is, for example, 1nm to 5 nm. The film thickness of the first ferromagnetic layer 11 is preferably, for example, 1nm to 2 nm. In the case where the first ferromagnetic layer 11 is a perpendicular magnetization film, if the film thickness of the first ferromagnetic layer 11 is small, the perpendicular magnetic anisotropy application effect from the layers located above and below the first ferromagnetic layer 11 is enhanced, and the perpendicular magnetic anisotropy of the first ferromagnetic layer 11 is enhanced. That is, if the perpendicular magnetic anisotropy of the first ferromagnetic layer 11 is high, the force by which the magnetization M11 is to return in the z direction increases. On the other hand, if the film thickness of the first ferromagnetic layer 11 is thick, the perpendicular magnetic anisotropy application effect from the layers above and below the first ferromagnetic layer 11 is relatively weakened, and the perpendicular magnetic anisotropy of the first ferromagnetic layer 11 is weakened.

If the film thickness of the first ferromagnetic layer 11 is thin, the volume as a ferromagnetic body becomes small, and if it is thick, the volume as a ferromagnetic body becomes large. The susceptibility of magnetization of the first ferromagnetic layer 11 when energy from the outside is applied is inversely proportional to the product (KuV) of the magnetic anisotropy (Ku) and the volume (V) of the first ferromagnetic layer 11. That is, if the product of the magnetic anisotropy and the volume of the first ferromagnetic layer 11 becomes small, the reactivity with respect to light increases. From such a viewpoint, in order to improve the reaction with respect to light, it is preferable to reduce the volume of the first ferromagnetic layer 11 in addition to properly designing the magnetic anisotropy of the first ferromagnetic layer 11.

When the film thickness of the first ferromagnetic layer 11 is thicker than 2nm, for example, an insertion layer made of Mo or W may be provided in the first ferromagnetic layer 11. That is, a stacked body in which a ferromagnetic layer, an insertion layer, and a ferromagnetic layer are stacked in this order in the z direction may be used as the first ferromagnetic layer 11. The perpendicular magnetic anisotropy of the first ferromagnetic layer 11 as a whole increases due to the interfacial magnetic anisotropy at the interface of the insertion layer and the ferromagnetic layer. The thickness of the intercalating layer is, for example, 0.1nm to 1.0nm.

The second ferromagnetic layer 12 is a magnetization pinned layer. The magnetization fixed layer is a layer made of a magnetic material whose magnetization state is less likely to change than that of the magnetization free layer when energy from a predetermined external source is applied. For example, the magnetization direction of the magnetization fixed layer is less likely to change than that of the magnetization free layer when energy from a predetermined external source is applied. For example, the magnetization of the magnetization fixed layer is less likely to change when energy is applied from a predetermined external source than that of the magnetization free layer. The coercivity of the second ferromagnetic layer 12 is, for example, greater than the coercivity of the first ferromagnetic layer 11. The second ferromagnetic layer 12 has, for example, an easy axis of magnetization in the same direction as the first ferromagnetic layer 11. The second ferromagnetic layer 12 may be an in-plane magnetization film or a perpendicular magnetization film. The film thickness of the second ferromagnetic layer 12 is, for example, 1nm to 5 nm.

The material constituting the second ferromagnetic layer 12 is, for example, the same as that of the first ferromagnetic layer 11. The second ferromagnetic layer 12 may be, for example, a multilayer film in which Co having a thickness of 0.4nm to 1.0nm and Pt having a thickness of 0.4nm to 1.0nm are alternately laminated several times. The second ferromagnetic layer 12 may be a laminate in which, for example, co having a thickness of 0.4nm to 1.0nm, mo having a thickness of 0.1nm to 0.5nm, coFeB alloy having a thickness of 0.3nm to 1.0nm, and Fe having a thickness of 0.3nm to 1.0nm are laminated in this order.

The magnetization of the second ferromagnetic layer 12 may be fixed by magnetic coupling with the ferromagnetic layer 16 sandwiching the magnetic coupling layer 17, for example. In this case, a layer in which the second ferromagnetic layer 12, the magnetic coupling layer 17, and the ferromagnetic layer 16 are combined may be referred to as a magnetization pinned layer. Details of the magnetic coupling layer 17 and the ferromagnetic layer 16 will be described later.

The spacer layer 13 is a layer disposed between the first ferromagnetic layer 11 and the second ferromagnetic layer 12. The spacer layer 13 is formed of a layer made of a conductor, an insulator, or a semiconductor, or a layer including a conductive point made of a conductor in the insulator. The spacer layer 13 is, for example, a nonmagnetic layer. The film thickness of the spacer layer 13 can be adjusted according to the magnetization of the first ferromagnetic layer 11 and the orientation direction of the magnetization of the second ferromagnetic layer 12 in an initial state described later.

For example, in the case where the spacer layer 13 is made of an insulator, the magnetic element 10 has a magnetic tunnel junction (MTJ: magnetic Tunnel Junction) made up of the first ferromagnetic layer 11, the spacer layer 13, and the second ferromagnetic layer 12. Such an element is called an MTJ element. In this case, the magnetic element 10 can exhibit a tunnel magnetoresistance (TMR: tunnel Magnetoresistance) effect. For example, in the case where the spacer layer 13 is composed of metal, the magnetic element 10 can exhibit a giant magnetoresistance (GMR: giant Magnetoresistance) effect. Such an element is called a GMR element. The magnetic element 10 is sometimes called an MTJ element, a GMR element, or the like, depending on the constituent material of the spacer layer 13, but is also called a magnetoresistance effect element.

In the case where the spacer layer 13 is made of an insulating material, a material containing aluminum oxide, magnesium oxide, titanium oxide, silicon oxide, or the like can be used as a material of the spacer layer 13. The insulating material may contain elements such as A1, B, si, mg, or magnetic elements such as Co, fe, ni. The film thickness of the spacer layer 13 is adjusted so that a high TMR effect is exhibited between the first ferromagnetic layer 11 and the second ferromagnetic layer 12, whereby a high magnetoresistance change rate is obtained. In order to use the TMR effect efficiently, the thickness of the spacer layer 13 may be about 0.5 to 5.0nm or about 1.0 to 2.5 nm.

In the case where the spacer layer 13 is made of a nonmagnetic conductive material, a conductive material such as Cu, ag, au, or Ru can be used. In order to effectively use the GMR effect, the thickness of the spacer layer 13 may be about 0.5 to 5.0nm or about 2.0 to 3.0 nm.

In the case where the spacer layer 13 is made of a nonmagnetic semiconductor material, a material such as zinc oxide, indium oxide, tin oxide, germanium oxide, gallium oxide, or ITO can be used. In this case, the thickness of the spacer layer 13 may be about 1.0 to 4.0 nm.

When a layer including a conductive point in a nonmagnetic insulator is used as the spacer layer 13, the nonmagnetic insulator may be made of aluminum oxide or magnesium oxide and include a conductive point made of a nonmagnetic conductor such as Cu, au, or A1. The conductor may be made of a magnetic element such as Co, fe, or Ni. In this case, the thickness of the spacer layer 13 may be about 1.0 to 2.5 nm. The conduction point is, for example, a columnar body having a diameter of 1nm to 5nm when viewed from a direction perpendicular to the film surface.

The ferromagnetic layer 16 is magnetically coupled with the second ferromagnetic layer 12, for example. The magnetic coupling is, for example, an antiferromagnetic coupling, which is produced by RKKY interactions. The direction of magnetization M12 of the second ferromagnetic layer 12 and the direction of magnetization M16 of the ferromagnetic layer 16 are in an antiparallel relationship. The material constituting the ferromagnetic layer 16 is, for example, the same as that of the first ferromagnetic layer 11.

The magnetic coupling layer 17 is located between the second ferromagnetic layer 12 and the ferromagnetic layer 16. The magnetic coupling layer 17 is, for example, ru, ir, or the like.

The buffer layer 14 is a layer for relaxing lattice mismatch between different crystals. The buffer layer 14 is, for example, a metal containing at least one element selected from Ta, ti, zr, and Cr, or a nitride containing at least one element selected from Ta, ti, zr, and Cu. More specifically, the buffer layer 14 is, for example, ta (simple substance), niCr alloy, taN (tantalum nitride), cuN (copper nitride). The film thickness of the buffer layer 14 is, for example, 1nm to 5 nm. The buffer layer 14 is amorphous, for example. The buffer layer 14 is located between the seed layer 15 and the second electrode E2, for example, and is connected to the second electrode E2. The buffer layer 14 suppresses the crystal structure of the second electrode E2 from affecting the crystal structure of the second ferromagnetic layer 12.

The seed layer 15 improves crystallinity of a layer stacked on the seed layer 15. The seed layer 15 is located, for example, between the buffer layer 14 and the ferromagnetic layer 16, and is on the buffer layer 14. The seed layer 15 is Pt, ru, zr, niFeCr, for example. The film thickness of the seed layer 15 is, for example, 1nm to 5 nm.

The capping layer 19 is between the first ferromagnetic layer 11 and the first electrode E1. The capping layer 19 may include a perpendicular magnetization induction layer 18 stacked on the first ferromagnetic layer 11 and connected to the first ferromagnetic layer 11. The capping layer 19 prevents damage to the underlying layer during processing and improves the crystallinity of the underlying layer upon annealing. The film thickness of the cover layer 19 is, for example, 10nm or less, so that the first ferromagnetic layer 11 is irradiated with sufficient light.

The perpendicular magnetization induction layer 18 induces perpendicular magnetic anisotropy of the first ferromagnetic layer 11. The perpendicular magnetization induction layer 18 is, for example, magnesium oxide, W, ta, mo, or the like. In the case where the perpendicular magnetization induction layer 18 is magnesium oxide, the magnesium oxide is preferably deficient in oxygen in order to improve conductivity. The thickness of the perpendicular magnetization sensitive layer 18 is, for example, 0.5nm to 5.0 nm.

The magnetic element 10 has a columnar shape. The magnetic element 10 may be cylindrical or prismatic in shape. The width of the magnetic element 10, when viewed in the z direction, can be, for example, 10nm to 2000 nm. The width of the magnetic element 10 may be 30nm to 500nm when viewed in the z direction. The length of the magnetic element 10 in the z direction is, for example, 30nm to 100 nm. In this way, the size of the magnetic element 10 as a photodetecting element can be made very small compared to a conventional photodetector such as a photomultiplier tube, and thus the analysis device 100 can be miniaturized.

The insulating layer 30 is, for example, an oxide, nitride, oxynitride of Si, A1, mg. The insulating layer 30 is, for example, silicon oxide (SiO) _x ) Silicon nitride (SiN) _x ) Silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (A) 1 ₂ O ₃ ) Zirconium oxide (ZrO) _x ) Etc.

The first electrode E1 is disposed on, for example, a side that irradiates the magnetic element 10 with light. A portion of the reflected light L2 (e.g., light L2 ₁ Light L2 ₂ Light L2 ₃ Any one of them) is irradiated from the first electrode E1 side toward the magnetic element 10, and is irradiated at least toward the first ferromagnetic layer 11. The first electrode E1 is made of a material having conductivity. The first electrode E1 is, for example, a transparent electrode having transparency to light in the use band. The first electrode E1 preferably transmits, for example, 80% or more of the light in the use band. The first electrode E1 is, for example, an oxide such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), or Indium Gallium Zinc Oxide (IGZO). The first electrode E1 may have a structure in which a plurality of columnar metals are provided in the transparent electrode material of these oxides. The transparent electrode material as described above is not necessarily used as the first electrode E1, and the irradiated light may be made to reach the first ferromagnetic layer 11 by using a metal material such as Au, cu, or A1 with a thin film thickness. When a metal is used as the material of the first electrode E1, the film thickness of the first electrode E1 is, for example, 3 to 10nm. The first electrode E1 may have an antireflection film on an irradiation surface of the irradiation light.

The second electrode E2 is located on the opposite side of the first electrode E1 from the magnetic element 10. The second electrode E2 is made of a material having conductivity. The second electrode E2 is made of a metal such as Cu, A1, or Au. Ta or Ti may be stacked on top of or below these metals. In addition, a laminated film of Cu and Ta, a laminated film of Ta and Cu and Ti, and a laminated film of Ta and Cu and TaN may also be used. Further, tiN or TaN may be used as the second electrode E2. The film thickness of the second electrode E2 is, for example, 200nm to 800nm.

The second electrode E2 may have a permeability to light irradiated to the magnetic element 10. As a material of the second electrode E2, a transparent electrode material of an oxide such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium Gallium Zinc Oxide (IGZO) or the like may be used similarly to the first electrode E1. In the case where light is irradiated from the first electrode E1, light may reach the second electrode E2 due to the intensity of light, but in this case, the second electrode E2 is formed of a transparent electrode material containing an oxide, and reflection of light at the interface between the second electrode E2 and a layer in contact therewith can be suppressed as compared with the case where the second electrode E2 is formed of a metal.

Next, the operation of the analysis system 200 according to the first embodiment will be described. First, light L1 is emitted from the light source 1. A part of the light L1 irradiates the analysis target sample Ob. The light detection device 2 is irradiated with the reflected light L2 reflected by the analysis target sample Ob.

The reflected light L2 irradiated to the photodetector 2 is split by the beam splitter 50 for each wavelength, for example. Light L2 after light splitting ₁ 、L2 ₂ 、L2 ₃ For example, each of the different magnetic elements 10 is irradiated. Light L2 ₁ 、L2 ₂ 、L2 ₃ Or may be condensed by the lenses R, respectively.

For example, if light L2 is irradiated to any one of the magnetic elements 10 ₁ 、L2 ₂ 、L2 ₃ Either one of them generates an output voltage from the magnetic element 10. That is, the magnetic element 10 replaces the irradiated light with an electrical signal.

The output voltage from the magnetic element 10 varies according to the intensity of light irradiated to the first ferromagnetic layer 11. The change in the output voltage from the magnetic element 10 is facilitated by the change in the resistance value in the lamination direction of the first ferromagnetic layer 11, the second ferromagnetic layer 12, and the spacer layer 13. The exact mechanism by which the output voltage from the magnetic element 10 changes due to the irradiation of light is not yet clarified, but for example, the following two mechanisms are considered.

Fig. 5A to 5D are diagrams for explaining a first mechanism of an operation example of the magnetic element 10. In the upper graph of fig. 5A to 5D, the vertical axis represents the intensity of light irradiated to the first ferromagnetic layer 11, and the horizontal axis represents time. In the lower graphs of fig. 5A to 5D, the vertical axis represents the resistance value in the z direction of the magnetic element 10, and the horizontal axis represents time. In fig. 5A to 5D, only the first ferromagnetic layer 11, the second ferromagnetic layer 12, and the spacer layer 13 in the magnetic element 10 are illustrated.

First, in a state where light of a first intensity is irradiated to the first ferromagnetic layer 11 (hereinafter, referred to as an initial state),the magnetization M11 of the first ferromagnetic layer 11 and the magnetization M12 of the second ferromagnetic layer 12 are in parallel relation, and the resistance value in the z-direction of the magnetic element 10 represents a first resistance value R ₁ The magnitude of the output voltage from the magnetic element 10 represents a first value. The first intensity may be zero when the intensity of light irradiated to the first ferromagnetic layer 11 is zero.

By flowing the induced current Is along the z-direction of the magnetic element 10, a voltage Is generated across the z-direction of the magnetic element 10, and the resistance value of the magnetic element 10 in the z-direction Is obtained from the voltage value using ohm's law. An output voltage from the magnetic element 10 is generated between the first electrode E1 and the second electrode E2. In the case of the example shown in fig. 5A to 5D, the induced current Is caused to flow from the first ferromagnetic layer 11 toward the second ferromagnetic layer 12. By flowing the induced current Is in this direction, spin transfer torque in the same direction as the magnetization M12 of the second ferromagnetic layer 12 acts on the magnetization M11 of the first ferromagnetic layer 11, and in the initial state, the magnetization M11 and the magnetization M12 are parallel. In addition, by flowing the induced current Is in this direction, the magnetization M11 of the first ferromagnetic layer 11 can be prevented from inverting during operation.

Then, the intensity of the light irradiated to the first ferromagnetic layer 11 changes. The magnetization M11 of the first ferromagnetic layer 11 is tilted from an initial state due to energy from the outside generated by irradiation of light. The angle of the direction of the magnetization M11 of the first ferromagnetic layer 11 in the state where light is not irradiated to the first ferromagnetic layer 11 and the direction of the magnetization M11 in the state where light is irradiated is both greater than 0 ° and less than 90 °.

If the magnetization M11 of the first ferromagnetic layer 11 is tilted from the initial state, the resistance value in the z-direction of the magnetic element 10 changes from the initial state. Moreover, the output voltage from the magnetic element 10 changes from the initial state. For example, according to the inclination of the magnetization M11 of the first ferromagnetic layer 11, the resistance value in the z-direction of the magnetic element 10 changes to the second resistance value R ₂ Third resistance value R ₃ Fourth resistance value R ₄ The output voltage from the magnetic element 10 changes to a second value, a third value, and a fourth value. The resistance value is according to the first resistance value R ₁ Second resistance value R ₂ Third resistorValue R ₃ Fourth resistance value R ₄ The order of (2) becomes larger. Second resistance value R ₂ Third resistance value R ₃ Fourth resistance value R ₄ The resistance values when the magnetization M11 and the magnetization M12 are parallel to each other (first resistance value R ₁ ) Between the resistance values when magnetization M11 and magnetization M12 are antiparallel. The output voltage from the magnetic element 10 becomes larger in the order of the first value, the second value, the third value, and the fourth value.

In the magnetic element 10, when the intensity of light irradiated to the first ferromagnetic layer 11 changes, the output voltage from the magnetic element 10 (the resistance value in the z direction of the magnetic element 10) changes. For example, if the first value (first resistance value R ₁ ) Is defined as "0", a second value (second resistance value R ₂ ) Is defined as "1", a third value (third resistance value R ₃ ) Is defined as "2", a fourth value (fourth resistance value R ₄ ) If the value is "3", information of 4 values can be read from the magnetic element 10. That is, by specifying the correspondence between the intensity of light irradiated to the first ferromagnetic layer 11 and the output voltage from the magnetic element 10, the intensity of light can be detected as the output voltage. Here, the case of reading out 4 values is shown as an example, but the number of values read out can be freely designed by setting the threshold value of the output voltage from the magnetic element 10 (the resistance value of the magnetic element 10). Further, the analog value of the output voltage of the magnetic element 10 may be directly used, and the intensity of the light that changes in analog may be detected as the analog output voltage.

The spin transfer torque in the same direction as the magnetization M12 of the second ferromagnetic layer 12 acts on the magnetization M11 of the first ferromagnetic layer 11. Therefore, in the case where light is not irradiated to the first ferromagnetic layer 11, the magnetization M11 tilted from the initial state returns to a state parallel to the magnetization M12. If the magnetization M11 and the magnetization M12 return to the parallel state, the resistance value in the z-direction of the magnetic element 10 returns to the first resistance value R ₁ 。

Here, the case where the magnetization M11 and the magnetization M12 are parallel in the initial state is described as an example, but the magnetization M11 and the magnetization M12 may be antiparallel in the initial state. In this case, the resistance value in the z direction of the magnetic element 10 decreases as the magnetization M11 is tilted (as the angle change of the magnetization M11 from the initial state increases). In the case where the magnetization M11 and the magnetization M12 are antiparallel in the initial state, an induced current Is preferably flows from the second ferromagnetic layer 12 toward the first ferromagnetic layer 11. By flowing the induced current Is in this direction, a spin transfer torque in the opposite direction to the magnetization M12 of the second ferromagnetic layer 12 acts on the magnetization M11 of the first ferromagnetic layer 11, and in the initial state, the magnetization M11 and the magnetization M12 are antiparallel.

Fig. 6A to 6D are diagrams for explaining a second mechanism of an operation example of the magnetic element 10. In the upper graphs of fig. 6A to 6D, the vertical axis represents the intensity of light irradiated to the first ferromagnetic layer 11, and the horizontal axis represents time. In the lower graphs of fig. 6A to 6D, the vertical axis represents the resistance value in the z direction of the magnetic element 10, and the horizontal axis represents time.

The states of the magnetization M11 and the magnetization M12 in the initial state shown in fig. 6A to 6D are the same as the states of the magnetization M11 and the magnetization M12 in the initial state shown in fig. 5A to 5D. In the case of the example shown in fig. 6A to 6D, the induced current Is preferably caused to flow from the first ferromagnetic layer 11 toward the second ferromagnetic layer 12. By flowing the induced current Is in this direction, spin transfer torque in the same direction as the magnetization M12 of the second ferromagnetic layer 12 acts on the magnetization M11 of the first ferromagnetic layer 11, and in the initial state, the magnetization M11 and the magnetization M12 are parallel.

Then, the intensity of the light irradiated to the first ferromagnetic layer 11 changes. The magnitude of the magnetization M11 of the first ferromagnetic layer 11 becomes smaller from the initial state due to energy from the outside generated by irradiation of light. If the magnetization M11 of the first ferromagnetic layer 11 becomes smaller from the initial state, the resistance value in the z direction of the magnetic element 10 changes. Also, the output voltage from the magnetic element 10 varies. For example, the resistance value in the z direction of the magnetic element 10 changes to the second resistance value R according to the magnitude of the magnetization M11 of the first ferromagnetic layer 11 ₂ Third resistance value R ₃ Fourth resistance value R ₄ The output voltage from the magnetic element 10 changes to a second value, a third value, and a fourth value. The resistance value is according to the first resistance value R ₁ Second resistance value R ₂ Third resistance value R ₃ Fourth resistance value R ₄ The order of (2) becomes larger. The output voltage from the magnetic element 10 becomes larger in the order of the first value, the second value, the third value, and the fourth value. Therefore, as in the case of fig. 5A to 5D, by specifying the correspondence between the intensity of light irradiated to the first ferromagnetic layer 11 and the output voltage from the magnetic element 10, the intensity of light can be detected as the output voltage.

In the case of the second mechanism, as in the case of the first mechanism, if the intensity of the light irradiated to the first ferromagnetic layer 11 is returned to the first intensity, the state of the magnetization M11 of the first ferromagnetic layer 11 is returned to the state of the initial state.

In fig. 6A to 6D, magnetization M11 and magnetization M12 may be antiparallel in the initial state. In this case, the smaller the magnitude of the magnetization M11, the smaller the resistance value in the z direction of the magnetic element 10. In the case where the magnetization M11 and the magnetization M12 are antiparallel in the initial state, an induced current Is preferably flows from the second ferromagnetic layer 12 toward the first ferromagnetic layer 11.

In addition, although the case where the magnetization M11 and the magnetization M12 are parallel or antiparallel in the initial state has been exemplified so far, the magnetization M11 and the magnetization M12 may be orthogonal in the initial state. For example, the case where the first ferromagnetic layer 11 is an in-plane magnetization film in which the magnetization M11 is oriented in any direction of the xy plane in the initial state and the second ferromagnetic layer 12 is a perpendicular magnetization film in which the magnetization M12 is oriented in the z direction corresponds to this case. By the magnetic anisotropy, the magnetization M11 is oriented in any direction in the xy plane, and the magnetization M12 is oriented in the z direction, whereby the magnetization M11 and the magnetization M12 are orthogonal in the initial state.

Fig. 7A to 7D and fig. 8A to 8D are diagrams for explaining another example of the operation of the magnetic element 10 according to the first embodiment. In fig. 7A to 7D and fig. 8A to 8D, only the first ferromagnetic layer 11, the second ferromagnetic layer 12, and the spacer layer 13 in the magnetic element 10 are illustrated. In fig. 7A to 7D and fig. 8A to 8D, the flow direction of the induced current Is applied to the magnetic element 10 Is different. In fig. 7A to 7D, the induced current Is caused to flow from the first ferromagnetic layer 11 toward the second ferromagnetic layer 12. In fig. 8A to 8D, the induced current Is caused to flow from the second ferromagnetic layer 12 toward the first ferromagnetic layer 11.

In any of fig. 7A to 7D and fig. 8A to 8D, the induced current Is flows through the magnetic element 10, and the spin transfer torque acts on the magnetization M11 in the initial state. In the case of fig. 7A to 7D, the spin transfer torque acts such that the magnetization M11 is parallel to the magnetization M12 of the second ferromagnetic layer 12. In the case of fig. 8A to 8D, the spin transfer torque acts such that the magnetization M11 is antiparallel to the magnetization M12 of the second ferromagnetic layer 12. In any of fig. 7A to 7D and fig. 8A to 8D, in the initial state, the magnetization M11 is oriented in any direction in the xy plane because the effect of magnetic anisotropy with respect to the magnetization M11 is greater than the effect of spin transfer torque.

If the intensity of the light irradiated to the first ferromagnetic layer 11 becomes large, the magnetization M11 of the first ferromagnetic layer 11 is tilted from the initial state due to energy from the outside generated by the irradiation of the light. The reason for this is that the sum of the effect of irradiation of light applied to the magnetization M11 and the effect of spin transfer torque is larger than the effect of magnetic anisotropy of the magnetization M11. If the intensity of the light irradiated to the first ferromagnetic layer 11 increases, the magnetization M11 in the case of fig. 7A to 7D is inclined so as to be parallel to the magnetization M12 of the second ferromagnetic layer 12, and the magnetization M11 in the case of fig. 8A to 8D is inclined so as to be antiparallel to the magnetization M12 of the second ferromagnetic layer 12. Since the directions of spin transfer torque acting on the magnetization M11 are different, the tilt directions of the magnetization M11 in fig. 7A to 7D and fig. 8A to 8D are different.

If the intensity of the light irradiated to the first ferromagnetic layer 11 increases, the resistance value of the magnetic element 10 decreases and the output voltage from the magnetic element 10 decreases in the cases of fig. 7A to 7D. In the case of fig. 8A to 8D, the resistance value of the magnetic element 10 increases, and the output voltage from the magnetic element 10 increases.

If the intensity of the light irradiated to the first ferromagnetic layer 11 returns to the first intensity, the state of the magnetization M11 of the first ferromagnetic layer 11 returns to the state of the initial state by the effect generated by the magnetic anisotropy with respect to the magnetization M11.

The first ferromagnetic layer 11 is an in-plane magnetization film, and the second ferromagnetic layer 12 is a perpendicular magnetization film, but the relationship may be reversed. That is, in the initial state, the magnetization M11 may be oriented in the z direction, and the magnetization M12 may be oriented in any direction in the xy plane.

The element structure of at least one of the plurality of magnetic elements 10 may be different from the other magnetic elements 10. For example, the element structure of each magnetic element 10 may be made different depending on the wavelength of the irradiated light. The element structures of the plurality of magnetic elements 10 may also be identical to each other. The state of magnetization M11 of the first ferromagnetic layer 11 of the magnetic element 10 changes with respect to light having a wide wavelength including ultraviolet rays, visible rays, and infrared rays according to the intensity of the irradiated light, and therefore, the element structures of the plurality of magnetic elements 10 can be made identical to each other.

Each magnetic element 10 emits light L2 having a different wavelength ₁ Light L2 ₂ Light L2 ₃ Respectively replaced by electrical signals. As a result, a signal S1 corresponding to the irradiation of the reflected light L2 is output from the light detection device 2. The signal S1 is, for example, the output voltage from each magnetic element 10, and is light L2 having a different wavelength ₁ Light L2 ₂ Light L2 ₃ Signals corresponding to the respective intensities.

The signal S1 is sent to the signal processing unit 4. The signal processing unit 4 monitors the signal S1 and stores it in a memory. The signal processing unit 4 collates the data of the reflected light L2 based on the stored signal S1 with the data stored in the information storage device 110. The data stored in the information storage device 110 is, for example, pre-sampled dictionary data. Based on the result of the comparison of the two data, the signal processing unit 4 recognizes the information of the analysis target sample Ob and outputs it to the outside.

In order to easily detect the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob by the magnetic element 10 without performing precise optical axis adjustment, the magnetic element group G1 including a plurality of magnetic elements 10 may be arranged in a two-dimensional array. Fig. 9 shows an example of the arrangement of the magnetic element 10 in the light detection device 2 according to the first embodiment. As shown in fig. 9, by arranging the plurality of magnetic element groups G1 in a two-dimensional array, even without precise optical axis adjustment, at least one magnetic element group G1 among the plurality of magnetic element groups G1 arranged in a two-dimensional array can be irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob. The signal processing unit 4 recognizes information of the analysis target sample Ob by using an electric signal from the magnetic element group G1 irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob, and outputs the information to the outside.

As described above, the analysis system 200 according to the first embodiment can recognize the information of the analysis target sample Ob by detecting the reflected light L2 reflected by the analysis target sample Ob by the magnetic element 10 in the analysis device 100 and comparing the result with the data stored in the information storage device 110.

In addition, the smaller the volume of the first ferromagnetic layer 11 is, the easier the magnetization M11 of the first ferromagnetic layer 11 changes with respect to irradiation of light. That is, the smaller the volume of the first ferromagnetic layer 11, the more easily the magnetization M11 of the first ferromagnetic layer 11 is tilted by the irradiation of light or becomes smaller by the irradiation of light. In other words, if the volume of the first ferromagnetic layer 11 is reduced, the magnetization M11 can be changed even with light of a minute light amount.

More precisely, the variability of the magnetization M11 is determined by the size of the product (KuV) of the magnetic anisotropy (Ku) and the volume (V) of the first ferromagnetic layer 11. The smaller the KuV, the smaller the amount of light, the magnetization M11 changes, and the larger the KuV, the larger the amount of light, the magnetization M11 does not change. That is, the KuV of the first ferromagnetic layer 11 is designed according to the light amount of externally irradiated light used in the application program. In the case of supposing such an extremely small amount of ultra-small light amount or photon detection, the KuV of the first ferromagnetic layer 11 is reduced, so that the light of such small amount of light can be detected. Since it is difficult to reduce the element size in the conventional pn junction semiconductor, detection of light of such a minute amount of light is a great advantage. That is, in order to reduce KuV, photon detection can be performed by reducing the volume of the first ferromagnetic layer 11, that is, reducing the element area or reducing the film thickness of the first ferromagnetic layer 11.

Second embodiment

The specific structure of the light detection device of the analysis system of the second embodiment is different from that of the analysis system 200 of the first embodiment. Fig. 10 is a sectional view of a light detection device 2A of the second embodiment. The photodetector 2A includes a magnetic element 10, a beam splitter 51, a lens R, a circuit board 91, and a wiring layer 95. The same reference numerals are given to the same components as those of the photodetector 2 in the photodetector 2A, and the description thereof will be omitted.

The spectroscope 51 splits reflected light reflected by the analysis target sample Ob or transmitted light transmitted through the analysis target sample Ob. For example, as shown in fig. 10, the beam splitter 51 splits the reflected light L2. For example, the reflected light L2 is irradiated to at least one magnetic element 10 via the beam splitter 51. The number of the magnetic elements 10 may be one or a plurality. In the case where the number of the magnetic elements 10 is plural, the plurality of magnetic elements 10 may be arranged in a two-dimensional array, or the magnetic element group G1 including the plurality of magnetic elements 10 may be arranged in a two-dimensional array, as in the case of fig. 9. The spectroscope 51 can change the inclination angle with respect to the xy plane. The spectroscope 51 can rotate about any direction of the xy plane, for example. Light L2 irradiated to the magnetic element 10 according to the inclination angle of the beam splitter 51 with respect to the xy plane _n Is a wavelength change of (c). Light L2 _n Is a part of the reflected light L2 split by the beam splitter 51.

The reflected light L2 irradiated to the photodetector 2A is split into, for example, light L2 of a specific wavelength by the beam splitter 51 _n . Light L2 after light splitting _n Such as to irradiate the magnetic element 10. Light L2 irradiated to magnetic element 10 _n For example, the wavelength of the beam splitter 51 can be changed by changing the tilt angle.

For example, if the light L2 is irradiated to the magnetic element 10 _n An output voltage is generated from the magnetic element 10. That is, the magnetic element 10 replaces the irradiated light with an electrical signal. For example, if the inclination angle of the spectroscope 51 is changed while the magnetic properties are being changedThe element 10 irradiates light L2 _n Light of a different wavelength is irradiated to the magnetic element 10 according to the inclination angle of the beam splitter 51. The magnetic element 10 is directed to the irradiated light L2 _n Is output with light L2 at each wavelength _n The intensity of which corresponds to the output voltage.

The photodetector 2A generates the light L2 based on the output voltage from the magnetic element 10 _n Signal S1 corresponding to the intensity of (c). The signal S1 is an output voltage from the magnetic element 10, for example, by light L2 irradiated to the magnetic element 10 _n Is varied for each wavelength variation. The signal processing unit 4 irradiates the light L2 to the magnetic element 10 _n The signal S1 is stored in a memory. The signal processing unit 4 collates the data of the reflected light L2 based on the stored signal S1 with the data stored in the information storage device 110. The data stored in the information storage device 110 is, for example, dictionary data sampled in advance. Based on the result of the comparison of the two data, the signal processing unit 4 recognizes the information of the analysis target sample Ob and outputs it to the outside.

In order to easily detect the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob by the magnetic element 10 without performing precise optical axis adjustment, a plurality of magnetic elements 10 may be arranged in a two-dimensional array. In the light detection device 2A, by arranging the plurality of magnetic elements 10 in a two-dimensional array, even if precise optical axis adjustment is not performed, at least one magnetic element 10 of the plurality of magnetic elements 10 arranged in a two-dimensional array is irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob. The signal processing unit 4 recognizes information of the analysis target sample Ob by using an electric signal from the magnetic element 10 irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob, and outputs the information to the outside.

The analysis system according to the second embodiment can recognize information of the analysis target sample Ob by detecting the reflected light L2 reflected by the analysis target sample Ob with the magnetic element 10 and comparing the result with data stored in the information storage device 110.

Third embodiment

The specific structure of the light detection device of the analysis system of the third embodiment is different from that of the analysis system 200 of the first embodiment. Fig. 11 is a cross-sectional view of a light detection device 2B of the third embodiment. The photodetector 2B includes the magnetic element 10, the wavelength filter 60, the lens R, the circuit board 91, and the wiring layer 95. The same reference numerals are given to the same components as those of the photodetector 2 in the photodetector 2B, and the description thereof will be omitted.

There are a plurality of wavelength filters 60. The wavelength filter 60 transmits light limited to a specific wavelength band. The magnetic element 10 has a plurality of magnetic elements. At least one magnetic element 10 is arranged corresponding to each wavelength filter 60. The light detection device 2B shown in fig. 11 has one magnetic element 10 arranged below one wavelength filter 60, but a plurality of magnetic elements 10 may be arranged below one wavelength filter 60. The light transmitted through the wavelength filter 60 is irradiated to the magnetic element 10. The reflected light L2 is irradiated to at least one magnetic element 10 arranged in correspondence with each of the wavelength filters 60 via each of the plurality of wavelength filters 60. The wavelength filter 60 is, for example, a dielectric multilayer film. The element structure of at least one of the plurality of magnetic elements 10 may also be different from the other magnetic elements 10. The element structures of the plurality of magnetic elements 10 may also be identical to each other.

At least one of the plurality of wavelength filters 60 has a transmission band different from the other wavelength filters 60. The light detection device 2B shown in fig. 11 has three wavelength filters 61, 62, 63 as the wavelength filter 60, and for example, transmission bands of the wavelength filters 61, 62, 63 are different from each other. The light detection device 2B shown in fig. 11 has three wavelength filters 61, 62, 63 as the wavelength filters 60, but the number of wavelength filters having different transmission bands or the transmission wavelength bandwidth of each wavelength filter may be designed based on data to be detected of the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob. For example, in the case of raman spectroscopic analysis, the light detection device 2B may be provided with a wavelength filter capable of detecting the number of raman spectrums and the transmission wavelength bandwidth of the reflected light reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob. For example, in the case of raman spectroscopic analysis using the light source 1 emitting laser light having a wavelength of 785nm, the photodetector 2B may be provided with, for example, wavelength filters having 80 transmission wavelength bands in the range of 785nm to less than 1185nm, the transmission wavelength band being 5nm, and the center wavelength of the transmission wavelength band being different for each 5 nm.

The reflected light L2 irradiated to the light detection device 2B is irradiated to each of the magnetic elements 10 via the wavelength filter 60. Since the wavelength filter 60 transmits only light of a specific wavelength band, light of a wavelength band corresponding to the transmission wavelength band of the wavelength filter 60 is irradiated to each of the magnetic elements 10.

If a part of the reflected light L2 is irradiated to the magnetic element 10, an output voltage is generated from the magnetic element 10. If light of a wavelength band corresponding to the transmission wavelength band of the wavelength filter 60 is irradiated to each of the magnetic elements 10, an output voltage is generated from each of the magnetic elements. Each magnetic element 10 outputs an output voltage corresponding to the intensity of light irradiated to the magnetic element 10 for each band of the irradiated light.

The light detection device 2B generates a signal S1 corresponding to the intensity of light irradiated to the magnetic element 10 based on the output voltage from the magnetic element 10. The signal S1 is the output voltage from each magnetic element 10. The signal processing unit 4 stores the signal S1 in the memory for each wavelength band of the light irradiated to the magnetic element 10. The signal processing unit 4 collates the data of the reflected light L2 based on the stored signal S1 with the data stored in the information storage device 110. The data stored in the information storage device 110 is, for example, pre-sampled dictionary data. Based on the result of the comparison of the two data, the signal processing unit 4 recognizes the information of the analysis target sample Ob and outputs it to the outside.

In order to easily detect the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob by the magnetic element 10 without performing precise optical axis adjustment, the magnetic element group G2 including the plurality of magnetic elements 10 and the plurality of wavelength filters 60 may be arranged in a two-dimensional array. Fig. 12 shows an example of the arrangement of the magnetic element 10 and the wavelength filter 60 in the photodetector 2B according to the third embodiment. As shown in fig. 12, by arranging the plurality of magnetic element groups G2 in a two-dimensional array, at least one magnetic element group G2 out of the plurality of magnetic element groups G2 arranged in a two-dimensional array is irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob, even without performing precise optical axis adjustment. The signal processing unit 4 recognizes information of the analysis target sample Ob by using an electric signal from the magnetic element group G2 irradiated with the reflected light L2 reflected by the analysis target sample Ob or the transmitted light transmitted through the analysis target sample Ob, and outputs the information to the outside.

The analysis system according to the third embodiment can recognize information of the analysis target sample Ob by detecting the reflected light L2 reflected by the analysis target sample Ob with the magnetic element 10 and comparing the result with data stored in the information storage device 110. In addition, the photodetector 2B of the third embodiment may not be provided with the spectroscope 50 described in the first embodiment, and thus may be further miniaturized.

Fourth embodiment

Fig. 13 is a block diagram of an analysis system 201 of the fourth embodiment. In the analysis system 201, the same components as those of the analysis system 200 are denoted by the same reference numerals, and description thereof is omitted.

The analysis system 201 includes an analysis device 101 and an information storage device 110. The analyzer 101 includes, for example, a light source 1A, a light detection device 2, a sample setting unit 3, and a signal processing unit 4.

The light source 1A includes a plurality of laser elements 71, 72, 73 for emitting laser light. The number of laser elements 71, 72, 73 is not limited. The wavelength of the laser light emitted from at least one of the plurality of laser elements 71, 72, 73 is different from the other laser elements. The plurality of laser elements 71, 72, 73 emit light having a wavelength of, for example, 300nm to 2000nm, respectively.

Light L1 is emitted from each of the laser elements 71, 72, 73 of the light source 1A ₁ 、L1 ₂ 、L1 ₃ . Light L1 ₁ 、L1 ₂ 、L1 ₃ For example, wavelengths that differ from each other. Light L1 ₁ 、L1 ₂ 、L1 ₃ Part of (2) is tested on the analysis objectThe sample Ob is illuminated and reflected. The light detection device 2 is irradiated with the reflected light L2 reflected by the analysis target sample Ob. The light detection device 2 may be replaced with the light detection devices 2A and 2B described above.

Light L1 of different wavelengths is irradiated to the light detection device 2 ₁ 、L1 ₂ 、L1 ₃ Reflected light L2 reflected by the analysis target sample Ob, respectively. Light L1 ₁ 、L1 ₂ 、L1 ₃ The reflected light is split by the beam splitter 50 for each wavelength, for example, and is irradiated to the magnetic element 10. The analysis device 101 detects reflected light reflected by the analysis target sample Ob or transmitted light transmitted through the analysis target sample Ob by using the magnetic element 10.

The analysis system according to the fourth embodiment can recognize information of the analysis target sample Ob by detecting the reflected light L2 reflected by the analysis target sample Ob by the magnetic element 10 by the analysis device 101 and comparing the result with the data stored in the information storage device 110. Further, by emitting light of a plurality of wavelengths from the light source 1A, the information of the analysis target sample Ob can be recognized in more detail.

Fifth embodiment

Fig. 14 is a block diagram of an analysis system 202 of a fifth embodiment. In the analysis system 202, the same components as those of the analysis system 200 are denoted by the same reference numerals, and description thereof is omitted.

The analysis system 202 includes the analysis device 102 and the information storage device 110. The analyzer 102 includes, for example, a light source 1, a light detection device 2, a sample setting unit 3, and a signal processing unit 4. The light detection device 2 is irradiated with the transmitted light L3 transmitted through the analysis target sample Ob provided in the sample providing unit 3. The magnetic element 10 of the light detection device 2 detects the transmitted light transmitted through the analysis target sample Ob. The light detection device 2 may be replaced with the light detection devices 2A and 2B described above. The light source 1 may be replaced with the light source 1A.

If the light L1 is irradiated to the analysis target sample Ob, a part of the light L3 is transmitted through the analysis target sample Ob as transmitted light. The transmitted light L3 is irradiated to the light detection device 2. The transmitted light L3 irradiated to the light detection device 2 is irradiated to at least one magnetic element 10 via, for example, a beam splitter 50. In the case of the light detection device 2B, the transmitted light L3 irradiated to the light detection device 2 is irradiated to at least one magnetic element 10 arranged in correspondence with each of the wavelength filters 60, for example, via each of the wavelength filters 60. The magnetic element 10 replaces the irradiated light with an electrical signal. The light detection device 2 generates a signal S2 corresponding to the intensity of light applied to the magnetic element 10, and sends the signal to the signal processing unit 4.

The signal processing unit 4 monitors the signal S2 and stores it in the memory. The signal processing unit 4 compares the data of the transmitted light L3 based on the stored signal S2 with the data stored in the information storage device 110. Based on the result of the comparison of the two data, the signal processing unit 4 recognizes the information of the analysis target sample Ob and outputs it to the outside.

The analysis system according to the fifth embodiment can identify information of the analysis target sample Ob by detecting the transmitted light L3 transmitted through the analysis target sample Ob by the magnetic element 10 by the analysis device 102 and comparing the result with the data stored in the information storage device 110.

Sixth embodiment

Fig. 15 is a block diagram of an analysis system 203 of the sixth embodiment. In the analysis system 203, the same components as those of the analysis system 200 are denoted by the same reference numerals, and description thereof is omitted.

The analysis system 203 includes the analysis device 103 and the information storage device 110. The analyzer 103 includes, for example, a light source 1, a light detection device 2, and a signal processing unit 4. The light detection device 2 may be replaced with the light detection devices 2A and 2B described above. The light source 1 may be replaced with the light source 1A. Although fig. 15 shows an example in which the light detection device 2 is irradiated with the reflected light L2 reflected by the analysis target sample Ob, the light detection device 2 may be irradiated with the transmitted light L3 transmitted through the analysis target sample Ob in the same manner as in fig. 14.

The analysis system 203 according to the sixth embodiment can identify information of the analysis target sample Ob by detecting the reflected light L2 reflected by the analysis target sample Ob by the magnetic element 10 by the analysis device 103 and comparing the result with data stored in the information storage device 110. The analysis device 103 has no sample setting section, and the analysis target sample Ob is outside the analysis device 103. Therefore, the measurement can be performed without being affected by the size of the sample Ob to be analyzed.

Fig. 16 is a schematic diagram of a portable information terminal 300 using the analysis system 203 according to the sixth embodiment. The portable information terminal 300 has an analysis device 103 and a display monitor 120. The analysis system 203 compares the data of the reflected light L2 reflected by the analysis device 103 or the transmitted light L3 transmitted through the analysis target sample Ob with the dictionary data stored in the external memory, and displays the comparison result on the display monitor 120 as information of the analysis target sample Ob.

The state of magnetization M11 of the first ferromagnetic layer 11 of the magnetic element 10 changes with respect to light having a wide wavelength including ultraviolet light, visible light, and infrared light according to the intensity of the irradiated light, and therefore the analysis devices and analysis systems of the first to sixth embodiments can be used for a wide range of applications.

The present invention is not limited to the above-described embodiments and modifications, and various modifications and changes can be made within the scope of the present invention as described in the claims.

Claims

1. An analysis device, wherein,

the device is provided with:

at least one magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and

A light source which emits light and which emits light,

irradiating the analysis target sample with the light from the light source,

and detecting reflected light reflected by the analysis target sample or transmitted light transmitted through the analysis target sample by using the at least one magnetic element.

2. The analysis device according to claim 1, wherein,

the device is also provided with a beam splitter,

the reflected light or the transmitted light is irradiated to the at least one magnetic element via the beam splitter.

3. The analysis device according to claim 2, wherein,

the at least one magnetic element is a plurality of magnetic elements,

the reflected light or the transmitted light is irradiated to the plurality of magnetic elements via the beam splitter.

4. The analysis device according to claim 1, wherein,

a plurality of wavelength filters are also provided,

the at least one magnetic element is a plurality of magnetic elements,

at least one of the plurality of magnetic elements is configured to correspond to each of the plurality of wavelength filters,

the reflected light or the transmitted light is irradiated to at least one of the magnetic elements disposed in correspondence with each of the plurality of wavelength filters via each of the plurality of wavelength filters, and a transmission band of at least one of the plurality of wavelength filters is different from that of the other wavelength filters.

5. The analysis device according to claim 1, wherein,

the light source is a laser element that emits laser light.

6. The analysis device according to claim 5, wherein,

the light source has a plurality of laser elements emitting laser light,

the wavelength of the laser light emitted from at least one of the plurality of laser elements is different from that of the other laser elements.

7. The analysis device according to claim 5, wherein,

the laser element emits light having a wavelength of 300nm to 2000 nm.

8. An analysis system, wherein,

the analyzer according to any one of claims 1 to 7, and an information storage device,

and comparing the data of the reflected light or the transmitted light detected by the magnetic element with the data stored in the information storage device, and identifying the information of the analysis target sample.

9. A portable information terminal, wherein,

the device is provided with:

the analytical system of claim 8, and

and a display monitor for displaying information of the analysis target sample.