CN1169023C - Process for producing etched grid - Google Patents
Process for producing etched grid Download PDFInfo
- Publication number
- CN1169023C CN1169023C CNB001223496A CN00122349A CN1169023C CN 1169023 C CN1169023 C CN 1169023C CN B001223496 A CNB001223496 A CN B001223496A CN 00122349 A CN00122349 A CN 00122349A CN 1169023 C CN1169023 C CN 1169023C
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- China
- Prior art keywords
- gluing
- etching
- drying tunnel
- production technology
- design
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Inking, Control Or Cleaning Of Printing Machines (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Abstract
The present invention relates to a process for producing an etched grid, which comprises the processes of blanking, design, plate making, gluing, exposure, development, solidification, etching, film removal, etc. When the design and gluing processes are carried out, certain surplus is reserved according to standard sizes, and the linear diameter of an etched grid is controlled below 0.03 millimeter, which is used for producing a cathode grid of a fluorescence display screen (VFD). The present invention has the advantages of simple production process, high rate of finished products and low cost.
Description
The present invention relates to a kind of production technology of electron device.
Producing printed circuit board (PCB) etc. with engraving method is a kind of technique known, mainly comprise technological processs such as plate-making, exposure, etching, striping, but because its etching surplus in design process is stayed not enoughly, and in processes such as exposure, etching, accurately do not grasp parameters such as temperature, time, photoresists resolution is low etc., cause its product line directly not reach below 0.03 millimeter, can't produce meticulous product the negative electrode aperture plate that resembles fluorescent display screen (VFD) at all.
The object of the present invention is to provide a kind of production technology of etched grid, energy production outlet footpath is at the fluorescent display screen below 0.03 millimeter (VFD) negative electrode aperture plate.
The production technology of etched grid comprises blanking, cleaning, system half tone, design, plate-making, exposure, gluing, development, curing, etching, striping, cleaning, check, packaging process.Design process etching surplus is pressed H=E * T/2 and is calculated, and H is the monolateral surpluses of lines in the formula, and E is an etching factor, and T is a thickness of strip.Plate-making adopts optical plotter to make positive and negative silver salt sheet, copies positive and negative diazo sheet by the silver salt sheet, and positive negative film contraposition skew is no more than 0.005 millimeter during plate-making.Gluing employing serigraphy, toward the useless area of silk screen, the strike through area respectively reduces 2 millimeters by sheet material nominal size length and width direction with block glue envelope, and photoresists adopt the very high polyester photoresists of resolution, and each plate must be put into drying tunnel dries.Exposure is that the printing ink plate that will dry by the fire exposes under ultraviolet light, time shutter 3-5 second.The employing concentration of developing is the Na of 3.5-4%
2CO
3Be developer solution.Solidification process adopts the far infrared drying tunnel, and temperature is 170 ℃ in the drying tunnel, and the product after developing is put into the oven dry of drying tunnel travelling belt.Spray etching, FeCl are adopted in etching
3Be etching solution, temperature remains between 45-48 ℃, and etching period is 8 to 10 minutes.Striping adopts 3.5-4%NaHO, takes out after soaking 1-2 minute under 80 ℃ of temperature constant states, puts into 70-75 ℃ of drying tunnel oven dry after the cleaning.Adopt this production technology, because of design plate-making link leaves enough surpluses, control such as exposure, development link time, temperature accurately, and increased develop before preprocessing process, the etching precision is reached below 0.03 millimeter, can produce the negative electrode aperture plate of fluorescent display screen (VFD), the yield rate height, cost is low.
Accompanying drawing is the process flow diagram of the embodiment of the invention.
Present embodiment comprises blanking, cleaning, system half tone, design, plate-making, gluing, exposure, development, curing, etching, striping, cleaning, check, packaging process, blanking is that band is cut into sheet material, treat gluing after the flushing with clean water, design process etching surplus is pressed H=E * T/2 and is calculated, H is the monolateral surpluses of lines in the formula, E is an etching factor, and T is a thickness of strip.Plate-making adopts optical plotter to make positive and negative silver salt sheet, copies positive and negative diazo sheet by the silver salt sheet, and positive negative film contraposition skew is no more than 0.005 millimeter during plate-making, measures with 100 times of reading microscopes.Serigraphy is adopted in gluing, and toward the useless area of silk screen, the strike through area respectively reduces 2 millimeters by sheet material nominal size length and width direction with block glue envelope, whether check light leak after the oven dry, envelope is mended at the light leak place, and photoresists are for differentiating very high polyester photoresists, and each plate must be put into drying tunnel dries, during first oven dry, drying tunnel temperature is set at 80 ℃, and during second oven dry, drying tunnel temperature is set at 85 ℃, 12 meters of drying tunnel length, conveying belt speed 40 cm per minute.Exposure is that the printing ink plate of preliminary drying is exposed on ultraviolet exposure machine, and developing, to adopt concentration be 3.5%Na
2CO
3Solution soaked 2 minutes.Solidification process adopts the far infrared drying tunnel, and temperature is 170 ℃ in the drying tunnel, and the product after developing is put into the oven dry of drying tunnel transport tape.Spray etching, FeCl are adopted in etching
3Be etching solution, temperature remains on 45 ℃, and etching period is 10 minutes, and striping adopts 35%NaHO to take out after soaking 2 minutes under 80 ℃ of temperature constant states, puts into 75 ℃ of drying tunnel oven dry after the flushing with clean water, dispatches from the factory after check, packing again.
Claims (3)
1, the production technology of etched grid, comprise blanking, cleaning, system web plate, design, plate-making, gluing, exposure, development, curing, etching, striping, cleaning, check, packaging process, it is characterized in that design process etching surplus is by H=E * T/2 calculating, H is the monolateral surpluses of lines in the formula, E is an etching factor, T is a sheet metal thickness, and during gluing, silk screen strike through area respectively reduces 2 millimeters by sheet material nominal size length and width direction.
2, production technology according to claim 1, it is characterized in that the sheet material gluing after, in first when oven dry, drying tunnel temperature is 80 ℃, during second oven dry, drying tunnel temperature is 85 ℃, 12 meters of drying tunnel length, conveying belt speed 40 cm per minute.
3, production technology according to claim 2 is characterized in that the used photoresists of gluing process are the very high polyester photoresists of resolution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001223496A CN1169023C (en) | 2000-08-23 | 2000-08-23 | Process for producing etched grid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001223496A CN1169023C (en) | 2000-08-23 | 2000-08-23 | Process for producing etched grid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1339722A CN1339722A (en) | 2002-03-13 |
| CN1169023C true CN1169023C (en) | 2004-09-29 |
Family
ID=4589204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001223496A Expired - Fee Related CN1169023C (en) | 2000-08-23 | 2000-08-23 | Process for producing etched grid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1169023C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373334B (en) * | 2008-10-13 | 2011-02-16 | 彩虹集团电子股份有限公司 | Method for manually shivering materials of grating net semi-etching connection point |
| CN101271275B (en) * | 2008-04-28 | 2011-08-10 | 彩虹集团电子股份有限公司 | Horn net manufacturing technique by etching method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102398407A (en) * | 2010-09-13 | 2012-04-04 | 政伸企业股份有限公司 | Screen printing process |
| CN103397329B (en) * | 2013-07-08 | 2015-11-25 | 浙江工业职业技术学院 | A kind of production technique of stainless steel dot matrix friction plate |
| CN103702512B (en) * | 2014-01-06 | 2017-02-08 | 深圳华麟电路技术有限公司 | Unnotched half etching steel strap and manufacturing method thereof |
| CN105887105B (en) * | 2016-04-08 | 2018-10-09 | 北方夜视技术股份有限公司 | A kind of clean method for scanning the super thin metal aperture plate piece of streak tube |
| CN110919304B (en) * | 2020-01-09 | 2021-07-06 | 安徽华东光电技术研究所有限公司 | Method for processing grid of vacuum microwave oscillation source |
-
2000
- 2000-08-23 CN CNB001223496A patent/CN1169023C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271275B (en) * | 2008-04-28 | 2011-08-10 | 彩虹集团电子股份有限公司 | Horn net manufacturing technique by etching method |
| CN101373334B (en) * | 2008-10-13 | 2011-02-16 | 彩虹集团电子股份有限公司 | Method for manually shivering materials of grating net semi-etching connection point |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1339722A (en) | 2002-03-13 |
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Addressee: Qiu Huajian Document name: Notification of Termination of Patent Right |
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