CN116898448A - Flexible brain-computer interface composite device and preparation method thereof - Google Patents
Flexible brain-computer interface composite device and preparation method thereof Download PDFInfo
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a flexible brain-computer interface composite device and a preparation method thereof. The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a laminated manner; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are stacked in the direction from the bottom electrode layer to the top electrode layer; one of the first epitaxial layer and the second epitaxial layer is made of an n-type doped semiconductor material, and the other of the first epitaxial layer and the second epitaxial layer is made of a p-type doped semiconductor material; the material of the light-emitting layer is indium gallium nitride. The invention combines the functions of collecting brain electrical signals, emitting light stimulation signals, supplying energy to the device and the like into the same device structure, thereby reducing the volume of the brain-computer interface device and improving the integration level.
Description
Technical Field
The invention relates to the technical field of brain-computer interfaces, in particular to a flexible brain-computer interface composite device and a preparation method thereof.
Background
With the rapid development of the information age, the computer has more powerful functions, plays an extremely important role in various aspects of human life, and has more prominent roles in various emerging fields. The brain-computer interface technology can realize unmanned communication between human and machine, which is helpful for greatly improving the efficiency of human-computer interaction, reducing the communication cost and solving the problems of language barrier and the like to a certain extent. The brain-computer interface technology can also obviously enhance the control capability, and human beings can directly operate external equipment through brain waves to realize functions of remote control, robot cooperation and the like, so that the production efficiency and the life quality of the human beings are enhanced. In addition, the brain-computer interface technology can promote the development of the fields of artificial intelligence, man-machine fusion and the like.
Brain-computer interface technology can be divided into invasive and non-invasive. Invasive brain-computer interfaces require electrodes implanted on the brain surface to directly acquire electrical signals from neurons. The non-invasive brain-computer interface relies on electrical signals on the scalp, such as electroencephalograms (EEG) and Electromyography (EMG). The signal quality and stability of the invasive brain-computer interface are higher, but the traditional invasive brain-computer interface is a single device rather than a composite device with multiple functions, which can certainly increase the volume and the integration difficulty of the interface, and involve excessive materials, which easily cause the problems of large trauma, subsequent inflammation, device stability and the like. Therefore, the preparation of the multifunctional composite device has important theoretical significance and practical value for the development of brain-computer interfaces, and brings great convenience and revolution for human beings.
Chinese patent application (application number: 202210188126.0, publication number: CN 114587371A) discloses a micro wireless optogenetic stimulation brain-computer interface system capable of being implanted for a long time, which has multiple functions of collecting brain-electrical signals, realizing optical signal stimulation, wirelessly supplying energy to devices and the like, but related functions are formed by combining multiple parts, and different devices are used for realizing corresponding functions, such as: the mu LED realizes the function of light signal stimulation, the array electrode realizes the function of collecting brain electrical signals, the metal coil realizes the function of wireless power supply, and the like. The superposition of a plurality of different functional components not only greatly increases the volume of the device, thereby greatly limiting the application of the brain-computer interface, such as: inconvenient to wear, increases implantation wounds, etc., and complex device structures can reduce device stability.
Disclosure of Invention
In view of this, the present invention provides a flexible brain-computer interface composite device capable of combining multiple functions in the same device structure and a method for manufacturing the same, so as to reduce the volume of the brain-computer interface and improve the integration level.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a lamination way; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are stacked in the direction from the bottom electrode layer to the top electrode layer;
one of the first epitaxial layer and the second epitaxial layer is made of an n-type doped semiconductor material, and the other of the first epitaxial layer and the second epitaxial layer is made of a p-type doped semiconductor material; the material of the light-emitting layer is indium gallium nitride.
In a preferred embodiment, the material of the first epitaxial layer is In 1-n-x Al n Ga x N or gallium oxide or indium gallium zinc oxide, and carrying out corresponding N-type doping or p-type doping, wherein x is more than or equal to 0 and less than or equal to 1, N is more than or equal to 0 and less than or equal to 1, and n+x is more than or equal to 0 and less than or equal to 1; the material of the light-emitting layer is In 1- m Ga m N, m is more than 0 and less than or equal to 1; the material of the second epitaxial layer is In 1-z-h Al h Ga z N, and carrying out corresponding N-type doping or p-type doping, wherein z is more than 0 and less than or equal to 1, h is more than or equal to 0 and less than or equal to 1, and z+h is more than or equal to 0 and less than or equal to 1.
In a preferred embodiment, the first epitaxial layer, the light emitting layer and the second epitaxial layer are more than one thin film structure or nano columnar structure.
In a preferred embodiment, the p-type doping has a doping concentration of 1×10 18 cm -3 ～1×10 24 cm -3 The doping concentration of the n-type doping is 1×10 18 cm -3 ～1×10 24 cm -3 。
In a preferred scheme, the thickness of the first epitaxial layer is 200 nm-4000 nm, the thickness of the light-emitting layer is 30 nm-600 nm, and the thickness of the second epitaxial layer is 20 nm-900 nm.
In a preferred scheme, an insulating layer is formed on the peripheral side face of the functional film layer.
In a preferred scheme, the functional thin film layer is divided into a plurality of sub-functional thin film layers which are mutually spaced and arranged in an array mode, insulating layers are respectively formed on the peripheral side faces of each sub-functional thin film layer, and each sub-functional thin film layer is provided with a sub-top electrode layer in a one-to-one correspondence mode.
Another aspect of the present invention is to provide a method for preparing the flexible brain-computer interface composite device as described above, which includes:
providing a flexible substrate and preparing and forming the bottom electrode layer on the flexible substrate;
growing the functional film layer on an epitaxial substrate, stripping the functional film layer from the epitaxial substrate and transferring the functional film layer to the bottom electrode layer;
and preparing and forming the top electrode layer on the functional film layer to obtain the flexible brain-computer interface composite device.
In a preferred scheme, after the functional thin film layer is transferred onto the bottom electrode layer, the functional thin film layer is divided into a plurality of sub-functional thin film layers which are mutually spaced and arranged in an array through an etching process, and then a sub-top electrode layer is formed on each sub-functional thin film layer by deposition respectively, so that a flexible brain-computer interface composite device is obtained; or after the top electrode layer is prepared and formed on the functional thin film layer, etching the functional thin film layer and the top electrode layer simultaneously through an etching process, so that the functional thin film layer is divided into a plurality of sub-functional thin film layers which are mutually spaced and arranged in an array, and each sub-functional thin film layer is correspondingly formed with one sub-top electrode layer respectively, so that the flexible brain-computer interface composite device is obtained.
In a preferred scheme, after the functional thin film layer is divided into a plurality of sub-functional thin film layers which are mutually spaced and arranged in an array through an etching process, an insulating layer is prepared and formed on the peripheral side surface of each sub-functional thin film layer.
The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional thin film layer and a top electrode layer which are arranged in a laminated manner, wherein the functional thin film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are arranged in a laminated manner in the direction from the bottom electrode layer to the top electrode layer, the light-emitting layer is made of indium gallium nitride material, and the material has the advantages of direct adjustable band gap, high carrier mobility, no toxicity, stable physical and chemical properties and the like, and can realize the dual functions of light emission and detection, so that the brain-computer interface device can realize the following functions at the same time: (1) The brain-computer interface composite device is directly contacted with brain tissues, when the brain tissues generate weak brain electrical signals, the weak brain electrical signals can be transmitted to an external circuit through a top electrode in direct contact, and the signals are amplified and analyzed through software to obtain relevant information of the brain electrical signals, so that the function of collecting the brain electrical signals is realized; (2) The bottom electrode layer and the top electrode layer give a certain voltage to the functional film layer, and the functional film layer can emit light so as to provide light source stimulation for biological cells and realize the function of optogenetic stimulation; (3) The functional film layer can generate photoelectric response to the light source with specific wavelength, and continuous external light irradiation can generate light response current on the functional film layer to charge or directly power the device, so that the function of power supply of the device is realized. That is, the invention combines the functions of collecting brain electrical signals, emitting light stimulation signals, powering devices and the like into the same device structure, thereby reducing the volume of the brain-computer interface and improving the integration level.
Drawings
FIG. 1 is a cross-sectional block diagram of a flexible brain-computer interface composite device in one embodiment of the invention;
FIG. 2 is a top view block diagram of a flexible brain-computer interface composite device in another embodiment of the present invention;
FIG. 3 is a schematic diagram of the growth of a functional thin film layer on an epitaxial substrate in an embodiment of the present invention;
FIG. 4 is a graph of test results of performing a photoelectric response test in an embodiment of the present invention;
FIG. 5 is a graphical representation of test results of an electroluminescence test conducted in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are merely exemplary and the invention is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, while other details not greatly related to the present invention are omitted.
The embodiment of the invention firstly provides a flexible brain-computer interface composite device, as shown in fig. 1, which comprises a flexible substrate 10, a bottom electrode layer 20, a functional film layer 30 and a top electrode layer 40 which are arranged in a laminated manner. Wherein the functional thin film layer 30 includes a first epitaxial layer 31, a light emitting layer 32, and a second epitaxial layer 33 stacked in a direction from the bottom electrode layer 20 to the top electrode layer 40. One of the first epitaxial layer 31 and the second epitaxial layer 32 is an n-type doped semiconductor material, and the other is a p-type doped semiconductor material. That is, if the first epitaxial layer 31 is selected to be an n-type doped semiconductor material, the second epitaxial layer 32 is selected to be a p-type doped semiconductor material. Conversely, if the first epitaxial layer 31 is selected to be a p-type doped semiconductor material, the second epitaxial layer 32 is selected to be an n-type doped semiconductor material. The material of the light emitting layer 32 is indium gallium nitride. In use, the flexible brain-computer interface composite device connects the bottom electrode layer 20 and the top electrode layer 40 to an external circuit by means of bonding wires via leads 80.
A flexible brain-computer interface composite device as described above: (1) The brain-computer interface composite device is directly contacted with brain tissues, when the brain tissues generate weak brain electrical signals, the weak brain electrical signals can be transmitted to an external circuit through a top electrode in direct contact, and the signals are amplified and analyzed through software to obtain relevant information of the brain electrical signals, so that the function of collecting the brain electrical signals is realized; (2) The bottom electrode layer and the top electrode layer give a certain voltage to the functional film layer, and the functional film layer can emit light so as to provide light source stimulation for biological cells and realize the function of optogenetic stimulation; (3) The functional film layer can generate photoelectric response to the light source with specific wavelength, and continuous external light irradiation can generate light response current on the functional film layer to charge or directly power the device, so that the function of power supply of the device is realized. That is, the invention combines the functions of collecting brain electrical signals, emitting light stimulation signals, powering devices and the like into the same device structure, thereby reducing the volume of the brain-computer interface and improving the integration level.
Wherein the flexible substrate 10 and the bottom electrode layer 20 are made of light-transmitting materials, respectively. In a preferred embodiment, the flexible substrate 10 may be a poly naphthol ester (PEN) substrate or a polyethylene terephthalate (PET) substrate; the bottom electrode layer 20 may be any one of transparent conductive film, two-dimensional thin film material, epoxy resin with indium tin oxide or silver nanowire formed on the surface, conductive adhesive tape, and conductive silver paste.
Preferably, the material of the first epitaxial layer is In 1-n-x Al n Ga x N or gallium oxide or indium gallium zinc oxide, and carrying out corresponding N-type doping or p-type doping, wherein x is more than or equal to 0 and less than or equal to 1, N is more than or equal to 0 and less than or equal to 1, and n+x is more than or equal to 0 and less than or equal to 1. The thickness of the first epitaxial layer is preferably 200nm to 4000nm.
Preferably, the material of the light-emitting layer is In 1-m Ga m N, m is more than 0 and less than or equal to 1. The light-emitting layerThe thickness is preferably 30nm to 600nm.
Preferably, the material of the second epitaxial layer is In 1-z-h Al h Ga z N, and carrying out corresponding N-type doping or p-type doping, wherein z is more than 0 and less than or equal to 1, h is more than or equal to 0 and less than or equal to 1, and z+h is more than or equal to 0 and less than or equal to 1. The thickness of the second epitaxial layer is preferably 20nm to 900nm.
Wherein the doping concentration of the p-type doping is 1×10 as described above 18 cm -3 ～1×10 24 cm -3 The doping concentration of the n-type doping is 1×10 as described above 18 cm -3 ～1×10 24 cm -3 。
In a preferred embodiment, the first epitaxial layer, the light emitting layer and the second epitaxial layer are more than one thin film structure or nano columnar structure.
Preferably, as shown in fig. 1, an insulating layer 50 is formed on the peripheral side surface of the functional thin film layer 30. The insulating layer 50 surrounds the side surface of the functional thin film layer 30, so as to perform an insulating function and prevent the side surface of the functional thin film layer 30 from being shorted. The material of the insulating layer 50 may be selected from silicon dioxide.
In a further preferred embodiment, as shown in fig. 2, the bottom electrode layer 20 is disposed on the flexible substrate 10, the functional thin film layer disposed on the bottom electrode layer 20 is divided into a plurality of sub-functional thin film layers 30a arranged at intervals and in an array, the insulating layers 50 are respectively formed on the peripheral side surfaces of each sub-functional thin film layer 30a, and one sub-top electrode layer 40a is disposed on each sub-functional thin film layer 30a in a one-to-one correspondence. Each sub-top electrode layer 40a is independently connected to one external electrode 90 through a wire 80. Thus, the same bottom electrode layer 20 is shared by a plurality of sub-functional thin film layers 30a arranged in an array, and each sub-functional thin film layer 30a is provided with an independent sub-top electrode layer 40a, so that each sub-functional thin film layer 30a can be controlled independently.
The embodiment of the invention further provides a preparation method of the flexible brain-computer interface composite device, and the preparation method comprises the following steps in combination with the structure shown in fig. 1:
step S10, providing a flexible substrate 10 and forming the bottom electrode layer 20 on the flexible substrate 10.
And step S20, growing and forming the functional film layer 30 on an epitaxial substrate, and stripping the functional film layer 30 from the epitaxial substrate and transferring the functional film layer to the bottom electrode layer 20.
Specifically, referring to fig. 3, a stacked sacrificial layer 70 is first formed on an epitaxial substrate 60, then the functional thin film layer 30 is formed on the sacrificial layer 70, and then the functional thin film layer 30 is peeled off from the epitaxial substrate 60 and transferred onto the bottom electrode layer 20 by electrochemical etching.
Illustratively, the epitaxial substrate 60 may be any one of a silicon wafer, a sapphire substrate, a GaN self-supporting substrate, a silicon carbide substrate, a diamond substrate, a metal substrate, and a substrate covered with a two-dimensional thin film material. Sacrificial layer 70 comprises a single layer or multiple layers of Al 1-b Ga b And N layers, wherein b is more than or equal to 0 and less than 1, and b values corresponding to two adjacent layers are different.
In a further preferred embodiment, after the flexible thin film layer 30 is transferred onto the bottom electrode layer 20, an insulating layer 50 is formed on the side surface of the functional thin film layer 30, so as to avoid short-circuiting the side surface of the functional thin film layer 30.
And step S30, preparing and forming the top electrode layer 40 on the functional film layer 30, thereby preparing and obtaining the flexible brain-computer interface composite device.
In further embodiments, corresponding to the flexible brain-computer interface composite device shown in fig. 2, the method of making as described above further comprises:
in the step S20, after transferring the functional thin film layer 30 onto the bottom electrode layer 20, the functional thin film layer 30 is divided into a plurality of sub-functional thin film layers 30a arranged at intervals in an array by an etching process; then in the step S30, a sub-top electrode layer 40a is deposited on each of the sub-functional thin film layers 30a, thereby preparing a flexible brain-computer interface composite device having the structure shown in fig. 2. Alternatively, in the step S30, after the top electrode layer 40 is formed on the functional thin film layer 30, the functional thin film layer 30 and the top electrode layer 40 are simultaneously etched by an etching process, so that the functional thin film layer 30 is divided into a plurality of sub-functional thin film layers 30a arranged at intervals in an array, and each sub-functional thin film layer 30a is correspondingly formed with a sub-top electrode layer 40a, thereby preparing the flexible brain-computer interface composite device with the structure shown in fig. 2.
In a preferred embodiment, after the functional thin film layer 30 is divided into a plurality of sub-functional thin film layers 30a spaced apart from each other and arranged in an array by an etching process, an insulating layer 50 is formed on the peripheral side surface of each of the sub-functional thin film layers 30 a.
Example 1
The embodiment provides a flexible brain-computer interface composite device and a preparation method thereof. Referring to fig. 1 and 3, the preparation process of the flexible brain-computer interface composite device comprises the following steps:
(1) A layer of indium tin oxide is deposited on the flexible polyurethane substrate 10 to form a bottom electrode layer 20.
(2) The epitaxial substrate 60 is a silicon substrate, and the functional thin film layer 30 is epitaxially grown on the epitaxial substrate 60 in a growth chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus. The specific process is as follows:
in the first step, an AlGaN layer having a thickness of about 2500nm is grown on the front surface of the epitaxial substrate 60 to obtain the sacrificial layer 70.
Second, a Si-doped GaN epitaxial layer with a thickness of 2000nm is grown on the sacrificial layer 70 at a doping concentration of 1×10 23 cm -3 A first epitaxial layer 31 is formed.
Third, alternately growing GaN thin film layers and In sequence on the first epitaxial layer 31 0.2 Ga 0.8 The N thin film layer is grown alternately 9 times and then the last GaN thin film layer is grown to form the light emitting layer 32. That is, the light emitting layer 32 is a multi-layered thin film layer structure, including 10 GaN thin film layers and 9 In layers In total 0.2 Ga 0.8 An N film layer. Wherein the thickness of each GaN film layer is 12nm, and each In layer 0.2 Ga 0.8 The thickness of the N film layer is 3nm。
Fourth, a layer of Al with a thickness of 10nm is grown on the light-emitting layer 32 0.05 Ga 0.95 An N film layer, a GaN epitaxial layer doped with Mg and having a thickness of 100nm and a doping concentration of 2×10 is grown 21 cm -3 The second epitaxial layer 33 is formed, and finally the functional thin film layer 30 is obtained.
Wherein, in of the third step light emitting layer 32 1-m Ga m The value of m In the N material is 0.8, and the In component In the actual sample fluctuates and is unevenly distributed. By adjusting the change of In composition, the forbidden bandwidth of InGaN can be changed from 0.67eV to 3.42eV, and the light-emitting wavelength range is changed from 1800nm to 365nm, and the wide wave bands including near infrared, full visible light and ultraviolet light are included. Fourth step In of the second epitaxial layer 33 1-z-h Al h Ga z The N material has a two-layer structure, z is 0.95, h is 0.05, and z is 1, h is 0.
(3) Preparing an etching electrode on the back surface of the epitaxial substrate 60 by using an In ball, and covering the etching electrode by using epoxy resin to ensure that the etching electrode is not conducted with the electrochemical solution; then, electrochemical etching is performed in a nitric acid solution at a voltage of about 8V to completely or partially etch off the AlGaN sacrificial layer 70, and the functional thin film layer 30 on the sacrificial layer 70 is obtained after peeling off the epitaxial substrate 60, and the functional thin film layer 30 is transferred onto the bottom electrode layer 20.
(4) A layer of SiO is prepared on the side surface of the functional film layer 30 on the bottom electrode layer 20 2 The insulating layer 50 insulates the side walls of the functional thin film layer 30 to prevent short circuits.
(5) The top electrode layer 40 was prepared by using a photolithography process, and the top electrode layer 40 includes a laminated Ni metal layer having a thickness of 30nm and Au metal layer having a thickness of 40 nm.
(6) The bottom electrode layer 20 and the top electrode layer 40 are connected with an external circuit through a wire 80 by adopting a bonding wire mode, and the flexible brain-computer interface composite device with the structure shown in fig. 1 is prepared.
The photoelectric response test is performed on the flexible brain-computer interface composite device prepared in this embodiment, and the external light source is used to continuously irradiate from the outer side of the flexible substrate 10, so that the flexible brain-computer interface composite device is observed to have the photoelectric response performance, as shown in fig. 4. Therefore, it can be determined that for the flexible brain-computer interface composite device, continuous external light irradiation can generate light response current in the functional film layer to charge or directly power the device, so that the function of power supply of the device is realized.
The photoluminescence test was performed on the flexible brain-computer interface composite device prepared in this embodiment, and by applying a voltage of 5V between the bottom electrode layer 20 and the top electrode layer 40, the functional thin film layer 30 can emit light, and as shown in the test result diagram shown in fig. 5, the functional thin film layer 30 of this embodiment emits blue light. Therefore, the functional thin film layer can emit light to provide light source stimulation for biological cells and realize the function of optogenetic stimulation by giving a certain voltage to the functional thin film layer through the bottom electrode layer and the top electrode layer.
Furthermore, the device can realize the regulation and control of the wavelength of the luminous light source by regulating and controlling the In component In the epitaxial growth part (the functional film layer 30), and the wavelength range of the light source is changed from 1800nm to 365nm, and the device can well meet the requirement of specific light source wavelength In a wide wave band including near infrared, full visible light and ultraviolet light. The method for adjusting the In component to change the forbidden bandwidth comprises impurity doping, lattice stress, morphology regulation and alloying. Doping impurities: different types of impurity elements (such as Cd, sn, pb and the like) are added to form n-type or p-type doping, and the doping can change the valence electron structure of In atoms, so that the forbidden bandwidth is adjusted. Lattice stress: the lattice stress affects the lattice constant and the atomic position of In, and thus affects the forbidden bandwidth, and fine adjustment of the forbidden bandwidth can be achieved by adjusting the lattice constant and the atomic position of In. Morphology regulation: morphology regulation and control can be realized by controlling the growth or treatment process, for example, thin film layers with different morphologies such as nanowires, nanorods or nanoparticles can be prepared, and the forbidden bandwidth of the thin film layers can be changed. Alloying: alloying other metals with In can change the crystal structure and atomic arrangement of In, thereby affecting the forbidden band width, for example, alloy materials such as InGaAs and InP have different forbidden band widths.
Example 2
The embodiment provides a flexible brain-computer interface composite device and a preparation method thereof. Compared with the embodiment 1, the preparation process of the flexible brain-computer interface composite device in the embodiment is different in that:
in step (3), after the functional thin film layer 30 is transferred onto the bottom electrode layer 20, a plurality of elongated grooves are processed on the functional thin film layer 30 by a first photolithography process, so that the functional thin film layer 30 is cut to form sub-functional thin film layers 30a arranged in an array, and each sub-functional thin film layer 30a is conducted through the bottom electrode 20, and the bottom electrode layer 20 directly serves as a common electrode. In step (4), siO is disposed on the peripheral side walls of each sub-functional thin film layer 30a 2 And an insulating layer 50 for preventing short circuit. In step (5), a respective independent sub-top electrode layer 40a is prepared on each sub-functional thin film layer 30a by a second photolithography process.
The rest of the process steps in this embodiment are identical to those in embodiment 1, and thus will not be described in detail.
The flexible brain-computer interface composite device with the structure shown in fig. 2 is finally prepared and obtained in the embodiment.
Example 3
The embodiment provides a flexible brain-computer interface composite device and a preparation method thereof. Referring to fig. 1 and 3, the preparation process of the flexible brain-computer interface composite device comprises the following steps:
(1) A layer of conductive silver paste is applied to the flexible PEN substrate 10 to form a bottom electrode layer 20.
(2) The functional thin film layer 30 is epitaxially grown on the epitaxial substrate 60 in a growth chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus using a sapphire substrate as the epitaxial substrate 60. The specific process is as follows:
in a first step, a Si-doped GaN layer having a thickness of about 3000nm is grown on the front surface of the epitaxial substrate 60 at a doping concentration of 1×10 24 cm -3 Sacrificial layer 70 is obtained.
Second, a Si-doped GaN epitaxial layer with a thickness of 2500nm is grown on the sacrificial layer 70 at a doping concentration of 1×10 23 cm -3 A first epitaxial layer 31 is formed.
Third step, at the first outsideAlternately growing GaN thin film layer and In sequence on the extension layer 31 0.3 Ga 0.7 The N thin film layer is grown alternately 14 times and then the last GaN thin film layer is grown to form the light emitting layer 32. That is, the light emitting layer 32 is a multi-layered thin film layer structure, including 15 GaN thin film layers and 14 In layers In total 0.3 Ga 0.7 An N film layer. Wherein the thickness of each GaN film layer is 10nm, and each In layer 0.3 Ga 0.7 The thickness of the N thin film layer was 2nm.
Fourth, a layer of Al with a thickness of 15nm is grown on the light-emitting layer 32 0.1 Ga 0.9 An N film layer, a GaN epitaxial layer doped with Mg and having a thickness of 150nm and a doping concentration of 5×10 is grown 21 cm -3 The second epitaxial layer 33 is formed, and finally the functional thin film layer 30 is obtained.
Wherein, in of the third step light emitting layer 32 1-m Ga m The value of m In the N material is 0.7, and the In component In the actual sample fluctuates and is unevenly distributed. Fourth step In of the second epitaxial layer 33 1-z-h Al h Ga z The N material has a two-layer structure, z is 0.9, h is 0.1, and z is 1 and h is 0 near the light emitting layer 32.
(3) A layer of SiO is prepared on the epitaxial substrate 60 on the peripheral side surface of the functional film layer 30 2 The insulating layer 50 insulates the side walls of the functional thin film layer 30 to prevent short circuits.
(4) The top electrode layer 40 was prepared by using a photolithography process, and the top electrode layer 40 includes a Ti metal layer having a thickness of 80nm and an Au metal layer having a thickness of 90nm, which are laminated.
(5) Preparing an etching electrode on the back surface of the sapphire epitaxial substrate 60 by using an In ball, and covering the etching electrode by using epoxy resin to ensure that the etching electrode is not conducted with an electrochemical solution; the top electrode layer 40 is covered with photoresist to prevent corrosion by an electrochemical solution, then electrochemical etching is performed in a KOH solution at a voltage of about 5V to completely or partially etch away the sacrificial layer 70, and the functional thin film layer 30 (including the top electrode layer 40 and the insulating layer 50 connected thereto) over the sacrificial layer 70 is obtained after peeling off the epitaxial substrate 60, and the functional thin film layer 30 is transferred onto the bottom electrode layer 20.
(6) The bottom electrode layer 20 and the top electrode layer 40 are connected with an external circuit through a wire 80 by adopting a bonding wire mode, and the flexible brain-computer interface composite device with the structure shown in fig. 1 is prepared.
Example 4
The embodiment provides a flexible brain-computer interface composite device and a preparation method thereof. Compared with the embodiment 1, the manufacturing process of the flexible brain-computer interface composite device of the present embodiment is different in that the process of growing the functional thin film layer 30 on the epitaxial substrate in the step (2) is different. In this embodiment, the epitaxial substrate 60 is a silicon substrate, and the functional thin film layer 30 is epitaxially grown on the epitaxial substrate 60 in a growth chamber of a molecular beam epitaxy apparatus (MBE). The specific process is as follows:
in the first step, an AlN layer having a thickness of about 3nm is grown on the front surface of the silicon substrate to obtain a sacrificial layer 70.
In the second step, a Si-doped GaN nanopillar epitaxial layer having a thickness of 300nm is grown on the sacrificial layer 70, resulting in the first epitaxial layer 31.
Third step, in is grown on the first epitaxial layer 31 0.05 Ga 0.95 The N nano-pillar epitaxial layer, 100nm thick, yields the light emitting layer 32.
Fourth, a Mg doped GaN nanopillar epitaxial layer with a thickness of 30nm is grown on the light emitting layer 32 to obtain a second epitaxial layer 33, and finally the functional thin film layer 30 is formed.
After the functional thin film layer 30 is formed, a graphene layer is transferred onto the functional thin film layer 30, and then the functional thin film layer 30 is peeled off from the epitaxial substrate 60 and transferred onto the bottom electrode layer 20.
In summary, the flexible brain-computer interface composite device and the preparation method thereof provided by the embodiments of the present invention can combine multiple functions of collecting brain electrical signals, sending out optical stimulation signals, supplying energy to the device, etc. into the same device structure, thereby reducing the volume of the brain-computer interface and improving the integration level.
It should be noted that the foregoing embodiments are merely illustrative of the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (10)
1. The flexible brain-computer interface composite device is characterized by comprising a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a laminated manner; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are stacked in the direction from the bottom electrode layer to the top electrode layer;
one of the first epitaxial layer and the second epitaxial layer is made of an n-type doped semiconductor material, and the other of the first epitaxial layer and the second epitaxial layer is made of a p-type doped semiconductor material; the material of the light-emitting layer is indium gallium nitride.
2. The flexible brain-computer interface composite device according to claim 1, wherein the material of the first epitaxial layer is In 1-n-x Al n Ga x N or gallium oxide or indium gallium zinc oxide, and carrying out corresponding N-type doping or p-type doping, wherein x is more than or equal to 0 and less than or equal to 1, N is more than or equal to 0 and less than or equal to 1, and n+x is more than or equal to 0 and less than or equal to 1; the material of the light-emitting layer is In 1-m Ga m N, m is more than 0 and less than or equal to 1; the material of the second epitaxial layer is In 1-z- h Al h Ga z N, and carrying out corresponding N-type doping or p-type doping, wherein z is more than 0 and less than or equal to 1, h is more than or equal to 0 and less than or equal to 1, and z+h is more than or equal to 0 and less than or equal to 1.
3. The flexible brain-computer interface composite device according to claim 2, wherein the first epitaxial layer, the light-emitting layer, and the second epitaxial layer are of one or more thin film structures or nano-pillar structures.
4. The flexible brain-computer interface composite device according to claim 2, wherein the doping concentrations of the p-type doping and the n-type doping are 1 x 10, respectively 18 cm -3 ～1×10 24 cm -3 。
5. The flexible brain-computer interface composite device according to claim 2, wherein the first epitaxial layer has a thickness of 200nm to 4000nm, the light-emitting layer has a thickness of 30nm to 600nm, and the second epitaxial layer has a thickness of 20nm to 900nm.
6. The flexible brain-computer interface composite device according to claim 1, wherein an insulating layer is formed on the peripheral side surface of the functional thin film layer.
7. The flexible brain-computer interface composite device according to any one of claims 1 to 6, wherein the functional thin film layer is divided into a plurality of sub-functional thin film layers which are spaced apart from each other and arranged in an array, insulating layers are respectively formed on the peripheral side surfaces of each of the sub-functional thin film layers, and a sub-top electrode layer is disposed on each of the sub-functional thin film layers in a one-to-one correspondence.
8. A method of manufacturing a flexible brain-computer interface composite device according to any one of claims 1-7, comprising:
providing a flexible substrate and preparing and forming the bottom electrode layer on the flexible substrate;
growing the functional film layer on an epitaxial substrate, stripping the functional film layer from the epitaxial substrate and transferring the functional film layer to the bottom electrode layer;
and preparing and forming the top electrode layer on the functional film layer to obtain the flexible brain-computer interface composite device.
9. The method according to claim 8, wherein after transferring the functional thin film layer onto the bottom electrode layer, the functional thin film layer is divided into a plurality of sub-functional thin film layers which are spaced apart from each other and arranged in an array through an etching process, and then sub-top electrode layers are respectively deposited on each of the sub-functional thin film layers to obtain a flexible brain-computer interface composite device; or after the top electrode layer is prepared and formed on the functional thin film layer, etching the functional thin film layer and the top electrode layer simultaneously through an etching process, so that the functional thin film layer is divided into a plurality of sub-functional thin film layers which are mutually spaced and arranged in an array, and each sub-functional thin film layer is correspondingly formed with one sub-top electrode layer respectively, so that the flexible brain-computer interface composite device is obtained.
10. The method of manufacturing according to claim 9, wherein an insulating layer is formed on the peripheral side of each of the sub-functional thin film layers after dividing the functional thin film layer into a plurality of sub-functional thin film layers spaced apart from each other and arranged in an array by an etching process.
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