CN116885670A - IGBT overcurrent protection circuit and inverter - Google Patents
IGBT overcurrent protection circuit and inverter Download PDFInfo
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- CN116885670A CN116885670A CN202311107067.0A CN202311107067A CN116885670A CN 116885670 A CN116885670 A CN 116885670A CN 202311107067 A CN202311107067 A CN 202311107067A CN 116885670 A CN116885670 A CN 116885670A
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- 238000005070 sampling Methods 0.000 claims abstract description 48
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- 230000003287 optical effect Effects 0.000 claims description 3
- 208000033999 Device damage Diseases 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 101100367244 Arabidopsis thaliana SWA1 gene Proteins 0.000 description 11
- 101100539892 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) USA1 gene Proteins 0.000 description 5
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- 230000001276 controlling effect Effects 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
- H02H7/1225—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to internal faults, e.g. shoot-through
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Abstract
The embodiment of the invention discloses an IGBT overcurrent protection circuit and an inverter, wherein the overcurrent protection circuit comprises an IGBT, a driving module, a current sampling module and a voltage clamping module; the collector of the IGBT is electrically connected with the anode of the direct current bus; the input end of the current sampling module is electrically connected with the emitter of the IGBT; the output end of the current sampling module is connected with the control end of the voltage clamping module; the base electrode of the IGBT is connected with the output end of the voltage clamping module and the output end of the driving module; the driving module is used for providing positive on-voltage and negative off-voltage for the IGBT. According to the technical scheme, the current sampling module is used for detecting the current flowing through the IGBT, and when the current exceeds the preset current range, a clamping control signal is sent out; the voltage clamping module forces to clamp the turn-on voltage to a lower IGBT turn-on voltage according to the clamping control signal, adjusts the current to be in a preset current range, and solves the problem of device damage caused by IGBT overcurrent.
Description
Technical Field
The embodiment of the invention relates to a circuit electronic technology, in particular to an IGBT overcurrent protection circuit and an inverter.
Background
The IGBT and the insulated gate bipolar transistor are composite full-control voltage driven power semiconductor devices consisting of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and have the advantages of high input impedance and low conduction voltage drop. IGBTs are widely used in power electronics because of their low driving power and reduced saturation voltage. In high-voltage high-power inverter power supplies, IGBTs tend to withstand large currents. The over-current of the IGBT is a main cause of damaging the IGBT, and the over-current protection is directly related to the working performance and operation safety of the IGBT device, and also affects the performance and safety of the whole system.
Disclosure of Invention
The invention provides an IGBT overcurrent protection circuit and an inverter, which are used for clamping the turn-on voltage of an IGBT to limit the peak current of the IGBT when the peak current of the IGBT exceeds a preset current range.
In a first aspect, an embodiment of the present invention provides an IGBT overcurrent protection circuit, including an IGBT, a driving module, a current sampling module, and a voltage clamping module;
the collector electrode of the IGBT is electrically connected with the positive electrode of the direct current bus; the input end of the current sampling module is electrically connected with the emitter of the IGBT; the output end of the current sampling module is connected with the control end of the voltage clamping module; the base electrode of the IGBT is respectively connected with the output end of the voltage clamping module and the output end of the driving module;
the driving module is used for providing an opening voltage for the IGBT;
the current sampling module is used for detecting the current flowing through the IGBT and sending out a clamping control signal when the current exceeds a preset current range;
the voltage clamping module is used for clamping the opening voltage provided by the driving module according to the clamping control signal so as to adjust the current to be in a preset current range.
Optionally, the current sampling module comprises a shunt resistor and a voltage comparison unit;
the shunt resistor is connected with the IGBT in series; the voltage comparison unit is connected in parallel with two ends of the shunt resistor;
the voltage comparison unit is used for collecting voltages at two ends of the shunt resistor, judging that the current exceeds a preset current range when the voltages are larger than a preset voltage threshold value, and sending out the clamping control signal.
Optionally, the voltage comparing unit includes a comparator, a reference power supply, a first diode and a first resistor;
the output end of the comparator is used as the output end of the current sampling module and is electrically connected with the control end of the voltage clamping module; the reference power supply is electrically connected with the positive input end of the comparator; the first diode and the first resistor are connected in series with the output end of the comparator and the positive input end of the comparator;
when the voltage of the reverse input end of the comparator is higher than the reference voltage, the output end of the comparator outputs a high level as a clamping control signal.
Optionally, the voltage clamping module includes a switching unit and a clamping unit connected in series;
the control end of the switch unit is used as the control end of the voltage clamping module and is connected with the output end of the current sampling module, one end of the switch unit is respectively and electrically connected with the output end of the driving module and the base electrode of the IGBT, the other end of the switch unit is connected with one end of the clamping unit, and the other end of the clamping unit is connected with a first fixed potential;
the switch unit is used for being conducted under the control of the clamping control signal;
and the clamping unit is used for stabilizing the potential of a connecting node between the output end of the driving module and the IGBT within a preset range so as to clamp the voltage of the base electrode of the IGBT.
Optionally, the switching unit includes a first switch; the clamping unit comprises a voltage stabilizing tube; the control end of the first switch is used as the input end of the voltage clamping module and is connected with the output end of the current sampling module; one end of the first switch is respectively connected with the output end of the driving module and the base electrode of the IGBT; the other end of the first switch is connected with one end of the voltage stabilizing tube, and the other end of the voltage stabilizing tube is connected with a first fixed potential.
Optionally, the device further comprises a switch module, wherein the switch module is electrically connected between the output end of the driving module and the IGBT base electrode; and the output end of the switch module is connected with the base electrode of the IGBT and is used for controlling the on and off of the IGBT.
Optionally, the switch module comprises an optocoupler isolator, wherein one end of the original side of the optocoupler isolator is connected with a power supply, and the other end of the original side of the optocoupler isolator is connected with a switch signal end; and the secondary side of the optical coupler is connected with the output end of the driving module.
Optionally, the primary side of the optocoupler includes a second diode, and one end of the second diode is connected with the power supply; the other end of the second diode is connected with a switch signal end; the optocoupler secondary side comprises a first triode and a second triode which are connected in series; the bases of the first triode and the second triode are connected with each other; the first pole of the first triode is connected with the output end of the driving module; the second pole of the first triode is connected with the first pole of the second triode, and the base electrode of the IGBT is connected with the connecting line of the second pole of the first triode and the first pole of the second triode; and a second pole of the second triode is connected with a second fixed potential.
Optionally, the driving module includes a first power supply terminal, a second power supply terminal, and a third power supply terminal;
the first power supply end is used as the output end of the driving module and is electrically connected with the first switch through a voltage dividing resistor, the second power supply end is used as a first fixed potential and is connected with the other end of the voltage stabilizing tube, and the third power supply end is used as a second fixed potential and is connected with the second pole of the second triode.
Optionally, the device further comprises a driving resistor module; the driving resistor module is connected between the output end of the switch module and the base electrode of the IGBT; for switching on and off the IGBTs.
Optionally, the driving resistor module includes an on driving resistor unit and an off driving resistor unit connected in parallel; the turn-on driving resistor unit comprises an on resistor for turning on the IGBT; the turn-off driving resistance unit includes a third diode and a turn-off resistance connected in series for turning off the IGBT.
Optionally, the overcurrent protection circuit is a three-phase T-NPC inverter topology circuit; the topological circuit outputs three phases in total, and each phase comprises 4 IGBTs; and each IGBT is correspondingly provided with a group of current sampling modules and voltage clamping modules.
In a second aspect, an embodiment of the present invention further provides an inverter, where the IGBT overcurrent protection circuit according to any one of the first aspect of the present invention is applied.
The embodiment of the invention provides an IGBT overcurrent protection circuit and an inverter, wherein the IGBT overcurrent protection circuit comprises an IGBT, a driving module, a current sampling module and a voltage clamping module; the collector of the IGBT is electrically connected with the anode of the direct current bus; the input end of the current sampling module is electrically connected with the emitter of the IGBT; the output end of the current sampling module is connected with the control end of the voltage clamping module; the base electrode of the IGBT is respectively connected with the output end of the voltage clamping module and the output end of the driving module; the driving module is used for providing an opening voltage for the IGBT; according to the technical scheme, the current sampling module is used for detecting the current flowing through the IGBT, and when the current exceeds the preset current range, a clamping control signal is sent out; the voltage clamping module clamps the turn-on voltage provided by the driving module according to the clamping control signal so as to adjust the current within a preset current range, thereby solving the problem of damage to the device caused by overcurrent of the IGBT.
Drawings
Fig. 1 is a schematic diagram of a current sampling part of an IGBT overcurrent protection circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a voltage clamping part of an IGBT overcurrent protection circuit according to an embodiment of the present invention;
FIG. 3 is a graph of typical output characteristics of an IGBT provided by an embodiment of the invention;
fig. 4 is a schematic diagram of an IGBT two-level driving logic provided in an embodiment of the present invention;
fig. 5 is a circuit configuration diagram of a driving module according to an embodiment of the present invention;
FIG. 6 is a circuit block diagram of a topology circuit of a three-phase T-NPC inverter provided by an embodiment of the invention;
FIG. 7 is a schematic diagram of a voltage clamping portion of an IGBTSA2 according to embodiments of the present invention;
FIG. 8 is a schematic diagram of a voltage clamping portion of an IGBTSA3 according to one embodiment of the present invention;
fig. 9 is a schematic diagram of a voltage clamping portion of an IGBTSA4 according to an embodiment of the invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present invention are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in the context, it will also be understood that when an element is referred to as being formed "on" or "under" another element, it can be directly formed "on" or "under" the other element or be indirectly formed "on" or "under" the other element through intervening elements. The terms "first," "second," and the like, are used for descriptive purposes only and not for any order, quantity, or importance, but rather are used to distinguish between different components. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The term "comprising" and variants thereof as used herein is intended to be open ended, i.e., including, but not limited to. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment".
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between corresponding contents and not for defining a sequential or interdependent relationship.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
Fig. 1 is a schematic diagram of a current sampling portion of an IGBT over-current protection circuit according to an embodiment of the present invention, and fig. 2 is a schematic diagram of a voltage clamping portion of an IGBT over-current protection circuit according to an embodiment of the present invention, and referring to fig. 1 and fig. 2, the over-current protection circuit includes an IGBTs a1, a driving module (not shown in the figure), a current sampling module 20, and a voltage clamping module 30; the collector C of the IGBTSA1 is electrically connected with the positive BUS+ of the direct current BUS; an input end 21 of the current sampling module 20 is electrically connected with an emitter E of the IGBTSA 1; the output end SA1 TLCON of the current sampling module 20 is connected with the control end SA1 TLCON of the voltage clamping module 30; the base B of the IGBTSA1 is connected with the output end 32 of the voltage clamping module 30 and the output end VCC_15V_SA1 of the driving module respectively; the driving module is used for providing an opening voltage for the IGBTSA 1; the current sampling module 20 is configured to detect a current I flowing through the igbts a1, and send out a clamp control signal when the current I exceeds a preset current range; the voltage clamping module 30 is configured to clamp the turn-on voltage provided by the driving module according to the clamping control signal, so as to adjust the current within a preset current range.
The preset current range may be understood as a current range preset according to the IGBT, and if the current range exceeds the preset current range, the IGBT is judged to be in an overcurrent state.
Specifically, referring to fig. 1, the igbts a1 and the current sampling module 20 are connected in series in a dc bus, the current sampling module 20 detects a current I flowing through the igbts a1 at any time, and when the current I is in a preset current range, the driving module provides a normal turn-on voltage to a base pwm_sa1 of the igbts a1 through an output terminal vcc_15v_sa1, which may be, for example, 15V; when the current sampling module 20 detects that the current I flowing through the igbts a1 exceeds the preset current range, a clamping control signal is output to the control terminal SA1 TLCON of the voltage clamping module 30 through the output terminal SA1 TLCON, the output terminal 32 of the voltage clamping module 30 is connected to the output terminal vcc_15v_sa1 of the driving module and the base pwm_sa1 of the igbts a1, and after receiving the clamping control signal, the driving module clamps the on voltage of 15V provided by the driving module to the base pwm_sa1 of the igbts a1 to a target voltage, which may be 10V, for example.
Fig. 3 is a typical output characteristic diagram of an IGBT according to an embodiment of the present invention, and as shown in fig. 3, when the gate voltage VGE of the IGBT, that is, the turn-on voltage, decreases from 15v to 10v, the collector rated current IC of the IGBT, that is, the maximum current allowed to pass continuously in the on state of the IGBT, is also limited to decrease, and decreases from the initial state IC1 to IC2, so that the regulating current is within a preset current range, and the IGBT is prevented from being damaged by excessive current.
The IGBT overcurrent protection circuit provided by the embodiment of the invention comprises an IGBT, a driving module, a current sampling module and a voltage clamping module; the collector of the IGBT is electrically connected with the anode of the direct current bus; the input end of the current sampling module is electrically connected with the emitter of the IGBT; the output end of the current sampling module is connected with the control end of the voltage clamping module; the base electrode of the IGBT is respectively connected with the output end of the voltage clamping module and the output end of the driving module; the driving module is used for providing an opening voltage for the IGBT; according to the technical scheme, the current sampling module is used for detecting the current flowing through the IGBT, and when the current exceeds the preset current range, a clamping control signal is sent out; the voltage clamping module clamps the turn-on voltage provided by the driving module according to the clamping control signal so as to adjust the current within a preset current range, thereby solving the problem of damage to the device caused by overcurrent of the IGBT.
Optionally, with continued reference to fig. 1, the current sampling module 20 includes a shunt resistor rsen_sa1 and a voltage comparison unit 22; the shunt resistor rsen_sa1 is connected in series with the IGBT; the voltage comparing unit 22 is connected in parallel to two ends of the shunt resistor rsen_sa 1; the voltage comparing unit 22 is configured to collect voltages at two ends of the shunt resistor rsen_sam1, and determine that the current exceeds a preset current range and send out a clamp control signal when the voltage is greater than a preset voltage threshold.
In an embodiment of the present invention, the voltage comparing unit 22 includes a comparator USA5, a reference power source vth_sa1, a first diode dhys_sa1 and a first resistor rhys_sa1; the output end of the comparator USA5 is electrically connected with the control end SA1 TLCON of the voltage clamping module as the output end SA1 TLCON of the current sampling module 20; the reference power supply VTH_SA1 is electrically connected with the positive input end of the comparator USA 5; the first diode Dhys_SA1 and the first resistor Rhys_SA1 are connected in series to the output end of the comparator USA5 and the positive input end of the comparator USA 5; when the voltage at the inverting input terminal of the comparator USA5 is higher than the reference voltage, the output terminal of the comparator USA5 outputs a high level as a clamping control signal.
The voltage clamp module 30 includes a switching unit 33 and a clamp unit 34 connected in series; the control end SA1 TLCON of the switch unit 33 is used as the control end of the voltage clamping module to be connected with the output end of the current sampling module 20, one end of the switch unit 33 is respectively and electrically connected with the output end VCC_15V_SA1 of the driving module and the base electrode of the IGBT, the other end of the switch unit 33 is connected with one end of the clamping unit 34, and the other end of the clamping unit 34 is connected with a first fixed potential; the switch unit 33 is used for conducting under the control of the clamp control signal; the clamping unit 34 is used for stabilizing the potential of the connection node 50 between the output terminal vcc_15v_sa1 of the driving module and the IGBT within a preset range so as to clamp the turn-on voltage of the base of the IGBT.
The switching unit 33 includes a first switch SWA1; the clamp unit 34 includes a regulator tube VZSA5; the control terminal SA1 TLCON of the first switch SWA1 is connected as a control terminal of the voltage clamping module 30 to the output terminal SA1 TLCON of the current sampling module 20; one end of the first switch SWA1 is connected with the output end vcc_15v_sa1 of the driving module and the base electrode of the igbts a1 respectively; the other end of the first switch SWA1 is connected to one end of the voltage regulator tube VZSA5, and the other end of the voltage regulator tube VZSA5 is connected to a first fixed potential.
Specifically, since the shunt resistor rsen_sa1 is connected in series with the IGBT, the current flowing through the shunt resistor rsen_sa1 is the same as the current flowing through the IGBT, so that it is possible to determine whether the IGBT is over-current by the current flowing through the shunt resistor rsen_sa1, specifically, the voltage generated by the comparator USA5 through the current flowing through the shunt resistor rsen_sa1 is compared with the reference voltage, when the voltage at the reverse input terminal of the comparator USA5 is higher than the reference voltage, it is determined that the IGBT is in an over-current state, at this time, the output terminal of the comparator USA5 outputs a high level, as a clamp control signal, the control terminal SA1 TLCON of the first switch SWA1 in the voltage clamp module 30 is connected as a control terminal of the voltage clamp module 30 with the output terminal of the current sampling module 20, after receiving the high level clamp control signal outputted from the output terminal of the comparator USA5, the first switch SWA1 is closed, at this time, the branch where the first switch SWA1 and the voltage regulator VZSA5 are on, the voltage regulator VZSA5 is a zener diode, as the characteristic of which is known, and the voltage is broken down in the reverse bias region until the voltage reaches the zener diode. At this time, the reverse current through the zener diode increases sharply, but even if the zener current varies, the zener voltage across the device remains unchanged. Therefore, the voltage stabilizing tube VZSA5 stabilizes the potential of the connection node 50 between the output terminal vcc_15v_sa1 of the driving module and the IGBT within a preset range, which may be 10V for example, and may select zener tubes with different zener voltages according to different requirements; the turn-on voltage of the base pwm_sa1 which is clamped and output to the IGBT is further changed from 15V to 10V, thereby limiting the peak current according to the characteristics of the IGBT.
Optionally, with continued reference to fig. 2, the over-current protection circuit further includes a switch module 40, where the switch module 40 is electrically connected between the output vcc_15v_sa1 of the drive module and the IGBT base pwm_sa1; the output terminal 41 of the switch module 40 is connected to the base pwm_sam1 of the IGBT for controlling the turn-on and turn-off of the IGBT. The switch module 40 comprises an optocoupler isolator USA1, wherein one end of the primary side of the optocoupler isolator USA1 is connected with a power supply, and the other end of the primary side of the optocoupler is connected with a switch signal end PWM_SA 1M; the optocoupler secondary is connected to the output vcc_15v_sa1 of the driver module. The primary side of the optical coupler comprises a second diode D2, and one end of the second diode D2 is connected with a power supply; the other end of the second diode D2 is connected with a switch signal end PWM_SA1_M; the secondary side of the optocoupler comprises two triodes connected in series; the bases of the two triodes are connected with each other; the first pole of the first triode Q1 is connected with the output end of the driving module; the second pole of the first triode Q1 is connected with the first pole of the second triode Q2, and the base PWM_SA1 of the IGBT is connected with the connecting line of the second pole of the first triode Q1 and the first pole of the second triode Q2; the second pole of the second triode Q2 is connected with a second fixed potential.
Specifically, one end of the primary side of the optocoupler isolator USA1 is connected with a power supply, and is powered by a 5V power supply, and the other end of the primary side of the optocoupler is connected with a switch signal end PWM_SA 1_M; fig. 4 is a schematic diagram of an IGBT two-level driving logic provided in the embodiment of the present invention, referring to fig. 2 and 4, a switching signal pwm_sa1_m controls on and off of SA1, and when pwm_sa1_m is at a low level, a primary side optocoupler of USA1 is turned on, and vcc_15v_sa1 provides a secondary side power supply for USA1 through a low-pass filter network composed of RSA5 and CAA 17; when the control end SA1_TLCON of the first switch SWA1 is at a high level, the first switch SWA1 is closed, the branch where the first switch SWA1 and the voltage stabilizing tube VZSA5 are positioned is conducted, the turn-on voltage of SA1 output by the output end VCC_15V_SA1 of the driving module is clamped to 10V by the voltage stabilizing tube VZSA5 from 15V and is output to the base PWM_SA1 of the IGBT, and the IGBTSA1 is turned on at the voltage of 10V.
Fig. 5 is a circuit diagram of a driving module according to an embodiment of the present invention, and referring to fig. 5, the driving module includes a first power terminal vcc_15v_sa1, a second power terminal vsa1_e, and a third power terminal vee_sa1; the first power supply terminal vcc_15v_sa1 is used as an output terminal vcc_15v_sa1 of the driving module and is electrically connected with the first switch SWA1 through a voltage dividing resistor RSA5, the second power supply terminal vsa1_e is used as a first fixed potential and is connected with the other end of the voltage stabilizing tube VZSA5, and the third power supply terminal vee_sa1 is used as a second fixed potential and is connected with the second pole of the second triode Q2.
In an embodiment of the present invention, with continued reference to fig. 2, the over-current protection circuit further includes a driving resistor module 60; the driving resistor module 60 is connected between the output end of the switch module 40 and the base electrode of the IGBT; for switching on and off the IGBTs.
Illustratively, the drive resistor module 60 includes an on drive resistor unit 61 and an off drive resistor unit 62 connected in parallel; the turn-on driving resistor unit 61 includes a turn-on resistor ron_sa1 for rapidly turning on the IGBT; the turn-off driving resistance unit comprises a third diode doff_Sa1 and a turn-off resistance roff_Sa1 which are connected in series, the turn-off resistance roff_Sa1 and the turn-on resistance ron_Sa1 are connected in parallel, and the resistance of the turn-off resistance roff_Sa1 is lower than that of the turn-on resistance ron_Sa1, so that the IGBT can be turned off more quickly.
Optionally, fig. 6 is a circuit structure diagram of a three-phase T-NPC inverter topology circuit provided in an embodiment of the present invention, and referring to fig. 6, the overcurrent protection circuit is a three-phase T-NPC inverter topology circuit; the topology circuit outputs three phases in total, and each phase comprises 4 IGBT; a set of current sampling modules 20 and voltage clamping modules 30 are provided for each IGBT.
Specifically, referring to fig. 6, the three-phase T-NPC inverter has a total of three-phase output, and each phase leg is composed of 4 IGBTs. Taking phase a as an example, SA1, SA2, SA3, and SA4 form an inverter leg of phase a. The SA1 and the SA3 are positive half-cycle high-frequency triodes of A phase, the positive half-cycle high-frequency triodes are driven to be complementary (a certain dead zone is reserved), the SA2 is closed in the positive half-cycle, and the current flows through the SA2 body diode in the follow current. SA4 and SA2 are negative half-cycle high-frequency triodes of A phase, the two are driven complementarily (a certain dead zone is reserved), the negative half-cycle SA3 is closed, and circulation is realized through the SA3 body diode during freewheeling. In one embodiment of the present invention, when the three-phase T-NPC inverter is applied to the power grid, the capability of low voltage and zero voltage ride through is required, i.e. the capability of 150mS of the power grid support is required when the power grid voltage drops to 15% or even 0% of the rated voltage. At this time, because the output grid voltage suddenly changes to be very low, the risk of over-current protection off-grid of the inverter or EOS breakdown of the power IGBT due to large di/dt and sudden increase of the direct current bus in the turn-off process is caused. Fig. 7 to fig. 9 are schematic diagrams of voltage clamping portions of the rest of IGBTs in the a-phase bridge arm according to the embodiment of the present invention; referring to fig. 1, fig. 2, and fig. 7 to fig. 9, a set of current sampling modules 20 and voltage clamping modules 30 are correspondingly disposed on each IGBT, so that when the current exceeds the preset current range, the adjusting current is within the preset current range, and in other embodiments of the present invention, the current sampling modules 20 may be current sensors, which is not limited in this aspect of the present invention; the output characteristic of the IGBT is used to limit the peak current of the IGBT, so as to ensure that the peak overvoltage of the abnormal IGBT is limited at the turn-off time, and the IGBT is safely turned on and off at the low-pass and zero-pass stages, and it should be noted that in the embodiment of the present invention, the connection of the IGBTSA2 and the IGBTSA3 is a common-source or common-injection scheme, so that one current sampling module 20 is shared; the preset current range is required to be lower than an overcurrent protection point of the IGBT, so that the trigger hardware is prevented from overcurrent.
Based on the same inventive concept, the embodiment of the invention also provides an inverter, which includes any one of the IGBT overcurrent protection circuits provided in the embodiment of the invention, and since the inverter includes the IGBT overcurrent protection circuits provided in the embodiment of the invention, the inverter has the same or similar beneficial effects as the IGBT overcurrent protection circuits provided in the embodiment of the invention, and the description thereof is omitted.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (13)
1. The IGBT overcurrent protection circuit is characterized by comprising an IGBT, a driving module, a current sampling module and a voltage clamping module;
the collector electrode of the IGBT is electrically connected with the positive electrode of the direct current bus; the input end of the current sampling module is electrically connected with the emitter of the IGBT; the output end of the current sampling module is connected with the control end of the voltage clamping module; the base electrode of the IGBT is respectively connected with the output end of the voltage clamping module and the output end of the driving module;
the driving module is used for providing an opening voltage for the IGBT;
the current sampling module is used for detecting the current flowing through the IGBT and sending out a clamping control signal when the current exceeds a preset current range;
the voltage clamping module is used for clamping the opening voltage provided by the driving module according to the clamping control signal so as to adjust the current to be in a preset current range.
2. The overcurrent protection circuit of claim 1, wherein the current sampling module comprises a shunt resistor and a voltage comparison unit;
the shunt resistor is connected with the IGBT in series; the voltage comparison unit is connected in parallel with two ends of the shunt resistor;
the voltage comparison unit is used for collecting voltages at two ends of the shunt resistor, judging that the current exceeds a preset current range when the voltages are larger than a preset voltage threshold value, and sending out the clamping control signal.
3. The overcurrent protection circuit according to claim 2, wherein the voltage comparison unit includes a comparator, a reference power supply, a first diode, and a first resistor;
the output end of the comparator is used as the output end of the current sampling module and is electrically connected with the control end of the voltage clamping module; the reference power supply is electrically connected with the positive input end of the comparator; the first diode and the first resistor are connected in series with the output end of the comparator and the positive input end of the comparator;
when the voltage of the reverse input end of the comparator is higher than the reference voltage, the output end of the comparator outputs a high level as a clamping control signal.
4. The overcurrent protection circuit of claim 1, wherein the voltage clamp module comprises a switching unit and a clamp unit connected in series;
the control end of the switch unit is used as the control end of the voltage clamping module and is connected with the output end of the current sampling module, one end of the switch unit is respectively and electrically connected with the output end of the driving module and the base electrode of the IGBT, the other end of the switch unit is connected with one end of the clamping unit, and the other end of the clamping unit is connected with a first fixed potential;
the switch unit is used for being conducted under the control of the clamping control signal;
and the clamping unit is used for stabilizing the potential of a connecting node between the output end of the driving module and the IGBT within a preset range so as to clamp the voltage of the base electrode of the IGBT.
5. The overcurrent protection circuit of claim 4, wherein the switching unit comprises a first switch; the clamping unit comprises a voltage stabilizing tube; the control end of the first switch is used as the input end of the voltage clamping module and is connected with the output end of the current sampling module; one end of the first switch is respectively connected with the output end of the driving module and the base electrode of the IGBT; the other end of the first switch is connected with one end of the voltage stabilizing tube, and the other end of the voltage stabilizing tube is connected with a first fixed potential.
6. The overcurrent protection circuit of claim 5, further comprising a switching module electrically connected between the output of the drive module and the IGBT base; and the output end of the switch module is connected with the base electrode of the IGBT and is used for controlling the on and off of the IGBT.
7. The overcurrent protection circuit of claim 6, wherein the switch module comprises an optocoupler isolator, one end of an optocoupler primary side of the optocoupler isolator is connected with a power supply, and the other end of the optocoupler primary side is connected with a switch signal end; and the secondary side of the optical coupler is connected with the output end of the driving module.
8. The overcurrent protection circuit of claim 7, wherein the primary side of the optocoupler comprises a second diode, one end of the second diode being connected to the power supply; the other end of the second diode is connected with a switch signal end; the optocoupler secondary side comprises a first triode and a second triode which are connected in series; the bases of the first triode and the second triode are connected with each other; the first pole of the first triode is connected with the output end of the driving module; the second pole of the first triode is connected with the first pole of the second triode, and the base electrode of the IGBT is connected with the connecting line of the second pole of the first triode and the first pole of the second triode; and a second pole of the second triode is connected with a second fixed potential.
9. The overcurrent protection circuit of claim 8, wherein the drive module comprises a first power supply terminal, a second power supply terminal, and a third power supply terminal;
the first power supply end is used as the output end of the driving module and is electrically connected with the first switch through a voltage dividing resistor, the second power supply end is used as a first fixed potential and is connected with the other end of the voltage stabilizing tube, and the third power supply end is used as a second fixed potential and is connected with the second pole of the second triode.
10. The overcurrent protection circuit of claim 6, further comprising a drive resistor module; the driving resistor module is connected between the output end of the switch module and the base electrode of the IGBT; for switching on and off the IGBT.
11. The overcurrent protection circuit of claim 10, wherein the drive resistor module comprises an on drive resistor unit and an off drive resistor unit connected in parallel; the turn-on driving resistor unit comprises an on resistor for turning on the IGBT; the turn-off driving resistance unit includes a third diode and a turn-off resistance connected in series for turning off the IGBT.
12. The overcurrent protection circuit of claim 1, wherein the overcurrent protection circuit is a three-phase T-NPC inverter topology; the topological circuit outputs three phases in total, and each phase comprises 4 IGBTs; and each IGBT is correspondingly provided with a group of current sampling modules and voltage clamping modules.
13. An inverter, characterized in that an overcurrent protection circuit according to any one of claims 1-12 is applied.
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| CN102315632A (en) * | 2011-10-14 | 2012-01-11 | 广东易事特电源股份有限公司 | Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor) |
| CN109888739A (en) * | 2019-01-30 | 2019-06-14 | 上海拓为汽车技术有限公司 | One kind being used for drive axle MOSFET short-circuit protection circuit |
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| CN112968434A (en) * | 2021-03-15 | 2021-06-15 | 无锡众享科技有限公司 | High-precision overcurrent protection circuit |
| CN113451995A (en) * | 2021-08-31 | 2021-09-28 | 浙江大学杭州国际科创中心 | Short circuit and overcurrent protection device and method |
| CN113676029A (en) * | 2020-05-14 | 2021-11-19 | 北京机械设备研究所 | Active clamping circuit based on IGBT |
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2023
- 2023-08-30 CN CN202311107067.0A patent/CN116885670B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102315632A (en) * | 2011-10-14 | 2012-01-11 | 广东易事特电源股份有限公司 | Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor) |
| CN109888739A (en) * | 2019-01-30 | 2019-06-14 | 上海拓为汽车技术有限公司 | One kind being used for drive axle MOSFET short-circuit protection circuit |
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| CN116885670B (en) | 2023-12-01 |
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