CN116864402A - Method for forming package structure - Google Patents

Method for forming package structure Download PDF

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Publication number
CN116864402A
CN116864402A CN202310802394.1A CN202310802394A CN116864402A CN 116864402 A CN116864402 A CN 116864402A CN 202310802394 A CN202310802394 A CN 202310802394A CN 116864402 A CN116864402 A CN 116864402A
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CN
China
Prior art keywords
substrate
dry film
sub
chip
forming
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Pending
Application number
CN202310802394.1A
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Chinese (zh)
Inventor
刘在福
郭瑞亮
焦洁
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Suzhou Tongfu Chaowei Semiconductor Co ltd
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Suzhou Tongfu Chaowei Semiconductor Co ltd
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Priority to CN202310802394.1A priority Critical patent/CN116864402A/en
Publication of CN116864402A publication Critical patent/CN116864402A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

After a dry film is provided, forming a plurality of through holes penetrating through the upper surface and the lower surface of the dry film in the dry film through drilling operation; providing a first substrate, wherein the upper surface and the lower surface of the first substrate are respectively provided with a first bonding pad and a second bonding pad, and a first circuit for electrically connecting the first bonding pad and the second bonding pad is arranged in the first substrate; attaching a dry film having a through hole to an upper surface of the first substrate, the through hole exposing a surface of the corresponding first pad; forming a metal column filled in the through hole; removing the dry film; providing a first chip, mounting the first chip on the upper surface of the first substrate at one side of the metal column, and electrically connecting part of the first chip with a first bonding pad; a first molding layer is formed covering the surface of the first chip, the sidewalls and top surface of the metal pillars, and the upper surface of the first substrate. The height of the formed metal column is higher, the metal column has better side wall morphology, and the metal column can also have smaller spacing and size.

Description

Method for forming package structure
Technical Field
The present disclosure relates to semiconductor devices, and particularly to a method for forming a package structure.
Background
With the increase of application requirements of smart phones, smart wear, smart manufacturing, automobile and motor vehicle assisted driving, AIoT and the like, terminal products need higher performance, and meanwhile, the terminal products still have small volume and low power consumption. Besides the System on Chip (SoC) of the Chip fabrication end focusing on the advanced silicon technology node, the System on Chip (SiP, system in Package) of the package fabrication end focusing on the advanced packaging technology also has the competitive power of the flag drum with low cost, flexibility and high yield. With the increase of integration density, siP has also been developed from early 2D packaging forms (such as MCM, multi-Chip Module) toward 2.5D and 3D.
As one package form in the 3D stereoscopic package, a PoP (Package on Package) stacked package generally has an upper substrate and a lower substrate stacked one on top of the other, on which corresponding semiconductor chips are respectively mounted. Common connection modes between the upper substrate and the lower substrate comprise metal column connection, but the existing metal columns formed by adopting a photoresist mask process and an electroplating process have the problems of spacing limitation, height limitation, poor side wall morphology and cost and pollution.
Disclosure of Invention
Some embodiments of the present application provide a method for forming a package structure, including:
providing a dry film;
forming a plurality of through holes penetrating through the upper and lower surfaces of the dry film in the dry film through a drilling operation;
providing a first substrate, wherein the upper surface and the lower surface of the first substrate are respectively provided with a first bonding pad and a second bonding pad, and a first circuit for electrically connecting the first bonding pad and the second bonding pad is arranged in the first substrate;
attaching the dry film having the through holes exposing the surfaces of the respective first pads to the upper surface of the first substrate;
forming a metal column filled in the through hole;
removing the dry film;
providing a first chip, mounting the first chip on the upper surface of the first substrate between the metal posts, and electrically connecting part of the first chip with the first bonding pads;
and forming a first plastic sealing layer which covers the surface of the first chip, the side wall and the top surface of the metal column and the upper surface of the first substrate.
In some embodiments, the drilling operation uses a drill bit to drill or a laser to drill.
In some embodiments, the dry film has a thickness of 20 microns to 1000 microns, the through holes have a depth of 20 microns to 1000 microns, the metal posts have a height of 20 microns to 1000 microns, and the metal posts have a diameter of greater than 25 microns.
In some embodiments, the dry film is a single layer structure or includes a plurality of discrete sub-dry films.
In some embodiments, when the dry film includes a plurality of discrete sub dry films, a plurality of sub through holes penetrating through the upper and lower surfaces of the sub dry films are formed in each of the sub dry films through a drilling operation, the plurality of sub dry films are sequentially stacked along a direction perpendicular to the upper surface of the first substrate and attached to the upper surface of the first substrate, the plurality of stacked sub dry films form the dry film, and a plurality of corresponding sub through holes in the plurality of sub dry films are vertically communicated to form the through holes.
In some embodiments, the upper and lower surfaces of the dry film or the upper and lower surfaces of each sub dry film have a protective film; and removing the protective film after drilling operation and before attaching.
In some embodiments, metal pillars are formed in the vias by an electroplating process.
In some embodiments, the first plastic layer is planarized by a chemical mechanical polishing process to expose the top surfaces of the metal pillars, or etched by an etching process to form openings in the first plastic layer to expose the top surfaces of the metal pillars.
In some embodiments, a second package is provided; the second package is stacked over the first plastic layer, the second package being connected with the exposed metal posts.
In some embodiments, the second package includes a second substrate, a second chip mounted on an upper surface of the second substrate, and a solder bump on a lower surface of the second substrate, the solder bump being electrically connected with the exposed metal pillar.
In the method for forming a package structure according to the foregoing embodiments of the present application, after providing a dry film, forming a plurality of through holes penetrating through upper and lower surfaces of the dry film in the dry film by a drilling operation; providing a first substrate, wherein the upper surface and the lower surface of the first substrate are respectively provided with a first bonding pad and a second bonding pad, and a first circuit for electrically connecting the first bonding pad and the second bonding pad is arranged in the first substrate; attaching the dry film having the through holes exposing the surfaces of the respective first pads to the upper surface of the first substrate; forming a metal column filled in the through hole; removing the dry film; providing a first chip, attaching the first chip on the upper surface of a first substrate on one side of a metal column, and electrically connecting the first chip with part of the first bonding pad; and forming a first plastic sealing layer which covers the surface of the first chip, the side wall and the top surface of the metal column and the upper surface of the first substrate. When the through holes are formed in the dry film through the drilling operation, the formed through holes can have deeper depth and better side wall morphology (smaller spacing and size can also be formed), so that the metal columns formed in the through holes can also have higher height and better side wall morphology (smaller spacing and size can also be formed), and the electrical performance of the formed metal columns is improved. And when the metal column is formed, the dry film does not need to be exposed and developed, so that the cost can be saved and the pollution problem can be avoided.
Further, in some embodiments, the dry film includes a plurality of discrete sub dry films, a plurality of sub through holes penetrating through upper and lower surfaces of the sub dry films are formed in each of the sub dry films through a drilling operation, and then the plurality of sub dry films are sequentially stacked in a direction perpendicular to an upper surface of the first substrate and attached to the upper surface of the first substrate, the plurality of stacked sub dry films form the dry film, a plurality of corresponding sub through holes in the plurality of sub dry films are vertically communicated to form the through holes, and metal pillars are formed in the through holes. Therefore, a dry film with thicker thickness can be formed through a plurality of layers of sub dry films, and metal columns with higher heights can be formed in the dry film, and as a plurality of sub through holes penetrating through the upper surface and the lower surface of each sub dry film are formed through the independent operation of drilling operation, the side walls of the sub through holes can keep better morphology, the difficulty of the process of forming deep through holes is reduced, after a plurality of sub dry films are stacked on a first substrate to form the dry film, the through holes formed by a plurality of sub through holes in the dry film also have better side wall morphology, so that the metal columns with higher heights formed in the through holes can have better side wall morphology, and the method can also enable the metal columns with higher heights formed in the through holes to keep smaller spacing and size.
Drawings
Fig. 1-14 are schematic diagrams illustrating a process for forming a semiconductor structure according to some embodiments of the application.
Detailed Description
The following describes the embodiments of the present application in detail with reference to the drawings. In describing embodiments of the present application in detail, the schematic drawings are not necessarily to scale and are merely illustrative and should not be taken as limiting the scope of the application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
Some embodiments of the present application provide a method for forming a package structure, which is described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a dry film 101 is provided.
The dry film 101 serves as a mask for the subsequent formation of metal pillars using an electroplating process. The material of the dry film 101 is a resin having viscosity, and the resin having viscosity is a photosensitive resin or a non-photosensitive resin. In a specific embodiment, since the present application is followed by forming the through holes penetrating the upper and lower surfaces of the dry film 101 in the dry film 101 using a drilling operation (instead of the exposing and developing process), the material of the dry film 101 in this embodiment uses a non-photosensitive resin, which is a non-photosensitive epoxy resin, a non-photosensitive polyimide resin, a non-photosensitive benzocyclobutene resin, or a non-photosensitive polybenzoxazole resin, to save the cost of the dry film.
The thickness of the dry film 101 is equal to or slightly greater than the height of the metal pillars to be formed later. The thickness of the dry film 101 is greater than the thickness or height of the first chip to be mounted later.
In the present application, since a plurality of through holes penetrating the upper and lower surfaces of the dry film are formed in the dry film 101 by subsequent drilling operation, when the through holes are formed by drilling operation, through holes with very deep and good sidewall morphology can be formed, through holes with reduced pitch and smaller size can be formed, so that metal pillars with very high height and good sidewall morphology can be formed in the through holes, and metal pillars with reduced pitch and smaller size can be formed, and the electrical performance of the metal pillars is improved (when the through holes are formed in the photoresist layer or the photosensitive dry film formed on the substrate by the existing exposure and development process, the depth of the through holes formed in the photoresist layer or the photosensitive dry film is limited due to the limitation of materials and processes, and when the depth is relatively deep, the sidewall morphology of the through holes is relatively poor, and the pitch and the size of the through holes are limited, and the height of the corresponding through holes is also limited, and when the height is relatively high, the sidewall morphology of the metal pillars is relatively poor, and the pitch and the size of the metal pillars are also limited, and the electrical performance of the metal pillars is affected. Thus, the thickness of the dry film 101 of the present application may be large, and the height of the corresponding subsequently formed metal pillars may be high, and in some embodiments, the thickness of the dry film 101 (or the depth of the through holes formed in the subsequent dry film 101) may range from 20 microns to 1000 microns, and may be 30 microns, 40 microns, 50 microns, 80 microns, 100 microns, 150 microns, 200 microns, 250 microns, 300 microns, 350 microns, 400 microns, 500 microns, 600 microns, 700 microns, 800 microns, 900 microns, 950 microns. The height of the metal pillars formed in the corresponding subsequent vias may also range from 20 microns to 1000 microns.
In some embodiments, the dry film 101 has a single layer structure, and both the upper and lower surfaces of the dry film 101 have a protective film 102, and the protective film 102 is used to protect the dry film 101 from damage and/or contamination during a subsequent drilling operation and before the dry film 101 is attached to the upper surface of the first substrate. In some embodiments, the material of the protective film 102 is a hard passivation material. The hard passivation material is an organic material, and the protective film 102 is also drilled through during subsequent drilling operations.
In another embodiment, referring to fig. 2, the dry film includes a plurality of discrete sub dry films (e.g., 101a,101 b), a plurality of sub through holes penetrating the upper and lower surfaces of the sub dry films are sequentially formed in each of the sub dry films by a drilling operation, and then the plurality of sub dry films are sequentially stacked in a direction perpendicular to the upper surface of the first substrate and attached to the upper surface of the first substrate, the plurality of stacked sub dry films constitute the dry film, a plurality of corresponding sub through holes among the plurality of sub dry films are vertically communicated to constitute the through holes, and metal pillars are formed in the through holes. Thus, a thicker dry film (e.g., greater than 100 microns, even greater than 500 microns and less than 1000 microns) can be formed by multiple layers of sub-dry films (e.g., 101a,101 b), and thus, higher metal pillars (e.g., greater than 100 microns, even greater than 500 microns and less than 1000 microns) can be formed in the dry film, and since each of the sub-dry films is individually operated by drilling, a plurality of sub-through holes penetrating the upper and lower surfaces of the sub-dry film can be formed, the sub-through hole sidewalls can maintain a better morphology and the process difficulty of forming deep through holes is reduced, and after stacking a plurality of sub-dry films on a first substrate to form a dry film, the through holes made up of a plurality of sub-through holes in the dry film also have a better side sidewall morphology, thereby enabling the higher metal pillars to have a better sidewall morphology, and the previously formed higher metal pillars can maintain a smaller pitch and size.
The number or the layer number of the plurality of discrete sub-dry films is more than or equal to 2 layers, and the number or the layer number of the plurality of discrete sub-dry films can be 2 layers, 3 layers, 4 layers, 5 layers, 6 layers, 7 layers, 8 layers, 9 layers and 10 layers. The specific number of the sub-dry films can be set according to actual needs. In this embodiment, two layers of the sub dry films are taken as an example to be described, including a sub dry film 101a and a sub dry film 101b.
In some embodiments, each layer of sub-dry film may have a thickness of 20-200 microns.
In some embodiments, each layer of sub-dry film (e.g., 101a,101 b) also has a protective film 102 on both the upper and lower surfaces.
Referring to fig. 3, fig. 3 is performed on the basis of fig. 1, and a plurality of through holes 103 penetrating the upper and lower surfaces of the dry film 101 are formed in the dry film 101 by a drilling operation 11.
In some embodiments, the drilling operation 11 drills through at least the protective film 102 on the upper surface of the dry film 101 when the protective film 102 is provided on the upper and lower surfaces of the dry film 101. In other embodiments, the upper and lower surfaces of the dry film 101 may be perforated with protective films 102.
In some embodiments, the depth of the formed via 103 is 20 microns to 1000 microns, and the diameter of the via 103 is greater than 25 microns.
In some embodiments, the drilling operation 11 uses a drill bit to drill or a laser to drill.
When the through holes 103 are formed in the dry film 101 by the drilling operation 11, the formed through holes 103 can have a deeper depth and better sidewall morphology, and can keep a smaller spacing and size. In addition, in the process of forming the through hole 103, the application can save cost and avoid pollution because the exposure and development operation of the dry film are not needed.
In another embodiment, referring to fig. 4, fig. 4 is performed on the basis of fig. 2, when the dry film includes a plurality of discrete sub dry films (e.g., 101a and 101 b), a plurality of sub through holes (e.g., 103a and 103 b) penetrating the upper and lower surfaces of the sub dry films (e.g., 101a and 101 b), respectively, are formed in each of the sub dry films (e.g., 101a and 101 b) through a drilling operation 11. In a specific embodiment, when the dry film includes two discrete sub dry films (such as 101a and 101 b), a plurality of sub through holes 103a penetrating the upper and lower surfaces of the sub dry film 101a are formed in the sub dry film 101a through a drilling operation 11; after the sub-dry film 101a is formed with the sub-through holes 103a, a plurality of sub-through holes 103b penetrating the upper and lower surfaces of the sub-dry film 101b are formed in the sub-dry film 101b by the drilling operation 11.
In some embodiments, the sub-vias (e.g., 103a or 103 b) are formed to a depth of 20-200 microns, and the sub-vias (e.g., 103a or 103 b) have a diameter of greater than 25 microns.
It should be noted that, when the drilling operation 11 is performed on each sub-dry film, parameters adopted in the drilling operation are the same, so that positions, sizes and morphologies of sub-through holes formed in each sub-dry film are the same. In this embodiment, a plurality of sub-through holes (such as 103a or 103 b) penetrating through the upper and lower surfaces of the sub-dry films (such as 103a and 103 b) are formed by the drilling operation 11, the side walls of the sub-through holes (such as 103a or 103 b) can keep a better appearance, and the sub-through holes are formed in a plurality of sub-dry films, and then the dry films are stacked and adhered, so that the dry films have a through hole formed by the plurality of sub-through holes (such as 103a or 103 b), the process difficulty is reduced when the deep through hole (deep through hole) is formed in the dry film, and the through hole formed by the plurality of sub-through holes (such as 103a or 103 b) also has a better side wall appearance, so that the metal column with a higher height in the through hole can have a better side wall appearance. In addition, the method can also enable the formation of higher height metal pillars while maintaining a smaller pitch and size.
Referring to fig. 5, a first substrate 201 is provided, the upper and lower surfaces of the first substrate 201 having a first pad 203 and a second pad 204, respectively, and the first substrate 201 having therein a first wiring (not shown) electrically connecting the first pad 203 and the second pad 204; the dry film 101 having the through holes 103 is attached to the upper surface of the first substrate 201, and the through holes 103 expose the surfaces of the corresponding first pads 203.
The first substrate 201 includes an upper surface and a lower surface opposite to each other, the upper surface has a plurality of first pads 203, the lower surface has a plurality of second pads 204, the first substrate 201 has a first circuit therein, the first circuit may include one or more of a metal wire, a metal plug, a via connection structure, and the first pads 203 and the second pads 204 are connected with the first circuit.
In some embodiments, the first substrate 201 may be one of a resin substrate, a ceramic substrate, a glass substrate, a silicon substrate, a metal substrate, a Printed Circuit Board (PCB), or a flexible circuit board (FPC). The first substrate 201 may be a single-layer board or a multi-layer board. The materials of the first bonding pad 203, the second bonding pad 204 and the first circuit are metal, and may be one or more of Al, cu, ag, au, pt, ni, ti, tiN, taN, ta, taC, taSiN, W, WN, WSi.
In an embodiment, when the dry film 101 having the through hole 103 is attached to the upper surface of the first substrate 201, the protective film 102 (refer to fig. 3) of the upper and lower surfaces of the dry film 101 is removed or torn off; after the protective film is removed or torn off, the dry film 101 having the through hole 103 is aligned with the first substrate 201 (a positional relationship between the dry film 101 and the first substrate 201 is established, thereby improving the accuracy of the attaching position), and then attached to the upper surface of the first substrate 201. In a specific embodiment, the alignment and attachment actions are accomplished by an attachment device or apparatus.
In some embodiments, a metal conductive layer is formed on the upper surface of the first substrate 201 before it is formed on the upper surface of the first substrate 201, the metal conductive layer being used as a conductive layer when a metal post is subsequently formed in a via using an electroplating process; the dry film 101 having the through holes 103 is attached to the surface of the conductive layer of the upper surface of the first substrate 201.
In another embodiment, referring to fig. 6, when the dry film 101 includes a plurality of discrete sub dry films (e.g., 101a and 101 b), the plurality of sub dry films having sub through holes (e.g., 103a and 103 b) are sequentially stacked in a direction perpendicular to the upper surface of the first substrate 201 and attached to the upper surface of the first substrate 201, the plurality of stacked sub dry films (e.g., 101a and 101 b) form the dry film 101, and a plurality of corresponding sub through holes (e.g., 103a and 103 b) of the plurality of sub dry films (e.g., 101a and 101 b) are vertically connected to form the through hole 103. In a specific embodiment, when the dry film 101 includes two separate sub dry films (101 a and 101 b), the sub dry film 101a is first attached to the upper surface of the first substrate 201 on the upper surface of the first substrate 201, and then the sub dry film 101b is attached to the upper surface of the sub dry film 101 a. In a specific embodiment, each sub-dry film (e.g., 101a and 101 b) needs to be aligned with the first substrate 201 before the plurality of sub-dry films (e.g., 101a and 101 b) are sequentially attached to the upper surface of the first substrate 201, and then the corresponding sub-dry film (e.g., 101a or 101 b) is attached to the upper surface of the first substrate 201. In a specific embodiment, before sequentially attaching the plurality of sub-dry films (for example, 101a and 101 b) to the upper surface of the first substrate 201, aligning the sub-dry film (for example, 101 a) to be attached at the bottommost layer with the first substrate 201, and then attaching the sub-dry film (for example, 101 a) to the upper surface of the first substrate 201; the subsequent sub-dry film (e.g., 101 b) to be applied may be aligned with the already applied front sub-dry film (e.g., 101 a), and then the sub-dry film (e.g., 101 b) to be applied is applied to the front sub-dry film (e.g., 101 a) surface.
Referring to fig. 7 or 8, a metal pillar 104 filling the via 103 (refer to fig. 5 or 6) is formed.
The top surface of the formed metal posts 104 is flush with or slightly lower than the upper surface of the dry film 101.
The metal posts 104 are formed using an electroplating process. In the present application, since the through hole 103 may have a deeper depth and a better sidewall morphology (may also have a smaller pitch and size), the metal pillar 104 may also have a higher height and a better sidewall morphology (may also have a smaller pitch and size), thereby improving the electrical performance of the metal pillar 104. And when the metal posts 104 are formed, the cost can be saved and the pollution problem can be avoided because the exposure and development operation on the dry film are not needed.
In some embodiments, the height of the formed metal pillars 104 may range from 20 microns to 1000 microns, with the diameter of the metal pillars 104 being greater than 25 microns.
In some embodiments, the metal posts 104 are one or more of W, al, cu, ti, ag, au, pt, ni.
Referring to fig. 9, the dry film 101 is removed; a first chip 301 is provided, the first chip 301 is mounted on the upper surface of the first substrate 201 between the metal posts 104, the first chip 301 is electrically connected with a part of the first pads 203, and the top surface of the first chip 301 (the surface of the first chip 301 not contacted with the first substrate 201) is lower than the top surface of the metal posts 104.
A dry film peeling process may be used to remove the dry film 101.
The first chip 301 includes, but is not limited to, a sensor chip, a power chip, a signal processing chip, a logic control chip, a memory chip, a radio frequency chip, and the like.
In some embodiments, the first chip 301 includes a first functional surface and a first back surface opposite to the first functional surface, an integrated circuit (not shown) having a specific function is formed in the first chip 301, and a first external connection terminal is provided on the first functional surface of the first chip 301, and the first external connection terminal is electrically connected to the integrated circuit. In some embodiments, the first external terminal is a pad located in the first functional surface of the first chip 301 (a surface of the pad may be flush with a surface of the first functional surface). In other embodiments, the first external terminal includes a bonding pad located in the first functional surface of the first chip and a first solder bump located on the bonding pad and protruding from the surface of the first functional surface. In some embodiments, the first solder bump may be a solder bump or include a metal bump and a solder bump on a top surface of the metal bump. In some embodiments, the material of the bonding pad is one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver. The metal bump is made of one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold and silver. The solder bump is made of one or more of tin, tin silver, tin lead, tin silver copper, tin silver zinc, tin bismuth indium, tin gold, tin copper, tin zinc indium or tin silver antimony.
The process of mounting the first chip 301 on the upper surface of the first substrate 201 on the side of the metal post 104 may include a flip-chip process or a front-mounting process, where the first functional surface of the first chip 301 is opposite to the upper surface of the first substrate 201 when the flip-chip process is performed, and the first external connection terminal on the first chip 301 is soldered to the first bonding pad 203 on the first substrate 201, in this manner, the top surface of the first chip 301 refers to the first back surface. When the front-loading process is performed, the first back surface of the first chip 301 is attached to the upper surface of the first substrate 201 on one side of the metal post 104 through an adhesive layer, so as to form a metal lead or an electrical connection structure for electrically connecting the first external terminal on the first chip 301 with the first pad 203 on the first substrate 201, in this way, the top surface of the first chip 301 refers to the first functional surface.
Referring to fig. 10, a first molding layer 205 is formed to cover the surface of the first chip 301, the sidewall surfaces and the top surfaces of the metal pillars 104, and the upper surface of the first substrate 201.
The material of the first plastic layer 205 may be a silicon-based resin material, a thermoplastic resin material, a thermosetting resin material, or an ultraviolet-curable resin material. Forming the first plastic layer 205 includes an injection molding process or a rotational molding process. The top surface of the formed first molding layer 205 is flush with the top surface of the metal posts 104.
Other packages (second packages) may be subsequently stacked on the package structure (first package layer) formed by the present disclosure. The top surface of the metal posts 104 needs to be exposed before other packages (second packages) are subsequently stacked.
In some embodiments, referring to fig. 11, the first molding layer 205 is planarized by a chemical mechanical polishing process, exposing the top surfaces of the metal pillars 104. In some embodiments, a rewiring layer 206 may be formed on the planarized surface of the first molding layer 205, the rewiring layer 206 being electrically connected to the metal pillars 104. When another package (second package) is subsequently stacked on the first plastic layer 205, the other package (second package) is electrically connected to the rewiring layer 206. The material of the rewiring layer 206 is metal.
In another embodiment, referring to fig. 12, the first molding layer 205 is etched by an etching process, including laser etching, to form an opening 207 in the first molding layer 205 exposing the top surface of the metal pillar 104. When another package (second package) is subsequently stacked on the first plastic layer 205, the other package (second package) is electrically connected to the metal posts 104 exposed by the openings 207.
The other package (second package) may have a different specific structure.
In some embodiments, referring to fig. 13 or 14, the second package includes a second substrate 202, a second chip 302 mounted on an upper surface of the second substrate 202, a bonding bump 210 on a lower surface of the second substrate 202, and a second molding layer 212 covering the second chip 302 and covering the upper surface of the second substrate 202, the upper and lower surfaces of the second substrate 202 having a third pad 209 and a fourth pad 208, respectively, and the second substrate 202 further having a second wire electrically connecting the third pad 209 and the fourth pad 208. It should be noted that, the specific structure of the second package in this embodiment is merely an example, and in other embodiments, the specific structure of the second package may be different.
Referring to fig. 13 or 14, the second package body is stacked over the first molding layer 205, and the second package body is connected with the exposed metal posts 104. In an embodiment, referring to fig. 13, when the second package is stacked over the first molding layer 205, the solder bumps 210 in the second package are soldered with the rewiring layer 206. In another embodiment, referring to fig. 14, when the second package is stacked over the first molding layer 205, the bonding bumps 210 in the second package are bonded with the exposed metal posts 104 in the openings 207.
In some embodiments, further comprising: a raised external connection bump 213 is formed on the second pad 204 of the lower surface of the first substrate 201.
It should be noted that the terms "comprising" and "having," and variations thereof, as referred to in this disclosure are intended to cover non-exclusive inclusion. The terms "first," "second," and the like are used to distinguish similar objects and not necessarily to describe a particular order or sequence unless otherwise indicated by context, it should be understood that the data so used may be interchanged where appropriate. In addition, embodiments of the present disclosure and features of embodiments may be combined with each other without conflict. In addition, in the above description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure. In the foregoing embodiments, each embodiment is mainly described for the differences from the other embodiments, and the same/similar parts between the embodiments need to be referred to (or referred to) each other.
Although the present application has been described in terms of the preferred embodiments, it is not intended to be limited to the embodiments, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present application by using the methods and technical matters disclosed above without departing from the spirit and scope of the present application, so any simple modifications, equivalent variations and modifications to the embodiments described above according to the technical matters of the present application are within the scope of the technical matters of the present application.

Claims (10)

1. The method for forming the packaging structure is characterized by comprising the following steps:
providing a dry film;
forming a plurality of through holes penetrating through the upper and lower surfaces of the dry film in the dry film through a drilling operation;
providing a first substrate, wherein the upper surface and the lower surface of the first substrate are respectively provided with a first bonding pad and a second bonding pad, and a first circuit for electrically connecting the first bonding pad and the second bonding pad is arranged in the first substrate;
attaching the dry film having the through holes exposing the surfaces of the respective first pads to the upper surface of the first substrate;
forming a metal column filled in the through hole;
removing the dry film;
providing a first chip, mounting the first chip on the upper surface of the first substrate between the metal posts, and electrically connecting part of the first chip with the first bonding pads;
and forming a first plastic sealing layer which covers the surface of the first chip, the side wall and the top surface of the metal column and the upper surface of the first substrate.
2. The method of forming a package structure of claim 1, wherein the drilling operation uses a drill bit to drill or a laser to drill.
3. The method of claim 1, wherein the dry film has a thickness of 20-1000 microns, the through holes have a depth of 20-1000 microns, the metal posts have a height of 20-1000 microns, and the metal posts have a diameter of greater than 25 microns.
4. The method of forming a package structure of claim 3, wherein the dry film is a single layer structure or comprises a plurality of discrete sub-dry films.
5. The method of forming a package structure of claim 4, wherein when the dry film includes a plurality of discrete sub dry films, a plurality of sub through holes penetrating the upper and lower surfaces of the sub dry films are formed in each of the sub dry films, respectively, by a drilling operation, the plurality of sub dry films are sequentially stacked in a direction perpendicular to the upper surface of the first substrate and attached to the upper surface of the first substrate, the plurality of stacked sub dry films form the dry film, and a plurality of corresponding sub through holes in the plurality of sub dry films are vertically communicated to form the through holes.
6. The method of forming a package structure of claim 4, wherein the upper and lower surfaces of the dry film or the upper and lower surfaces of each sub-dry film have a protective film; and removing the protective film after drilling operation and before attaching.
7. The method of forming a package structure of claim 1, wherein the metal pillars are formed in the vias by an electroplating process.
8. The method of claim 1, wherein the first molding layer is planarized by a chemical mechanical polishing process to expose top surfaces of the metal pillars, or the first molding layer is etched by an etching process to form openings in the first molding layer to expose top surfaces of the metal pillars.
9. The method of forming a package structure of claim 8, wherein a second package is provided; the second package is stacked over the first plastic layer, the second package being connected with the exposed metal posts.
10. The method of forming a package structure of claim 9, wherein the second package body includes a second substrate, a second chip mounted on an upper surface of the second substrate, a solder bump on a lower surface of the second substrate, and a second molding layer covering the second chip and covering the upper surface of the second substrate, the solder bump being electrically connected with the exposed metal pillar.
CN202310802394.1A 2023-07-03 2023-07-03 Method for forming package structure Pending CN116864402A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310802394.1A CN116864402A (en) 2023-07-03 2023-07-03 Method for forming package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310802394.1A CN116864402A (en) 2023-07-03 2023-07-03 Method for forming package structure

Publications (1)

Publication Number Publication Date
CN116864402A true CN116864402A (en) 2023-10-10

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Family Applications (1)

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Country Status (1)

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