CN116861738B - Calculation method of silicon wafer polishing motion trail - Google Patents
Calculation method of silicon wafer polishing motion trail Download PDFInfo
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Abstract
The application provides a calculation method of a silicon wafer polishing motion track, which comprises the following steps: s1: acquiring operation parameters of polishing equipment; s2: converting the acquired operation parameters into the motion parameters of the planet wheels in the polishing equipment; s3: establishing a calculation model, and obtaining the movement track of the star wheel according to the movement parameters of the star wheel; s4: and obtaining the motion trail of the silicon wafer based on the calculation model according to the motion trail of the star wheel. According to the method, the rotating speeds of the inner pin ring and the outer pin ring are converted into the revolution speeds and the rotation speeds of the planetary wheel and the silicon wafer through the calculation model, the motion trail of the silicon wafer in the machine table is simulated and reduced through a simple connecting rod structure, and the position and the motion trail of the silicon wafer are monitored in real time in the working process of the DSP equipment which is always in a closed state.
Description
Technical Field
The application belongs to the technical field of semiconductors, in particular to the technical field of silicon wafer polishing, and particularly relates to a calculation method of a silicon wafer polishing motion track.
Background
Semiconductor silicon wafers are an indispensable important material in modern electronics because of their excellent electrical properties and controllable semiconductor properties. It is widely used in advanced information technology fields such as integrated circuits, solar cells, sensors, photoelectric devices and the like.
Generally, a semiconductor wafer is obtained by sequentially performing the following steps: slicing the single crystal ingot into thin disk-shaped silicon wafers by a wire saw; a grinding step of flattening the front and back surfaces of the sliced silicon wafer and making the front and back surfaces have a predetermined thickness; and a polishing step of eliminating the roughness of the surface of the silicon wafer after grinding and performing mirror finish machining with high flatness.
In the above-mentioned polishing process of a semiconductor wafer, a double-sided polishing method (Double Sided Polishing, DSP) for simultaneously polishing both sides of the semiconductor wafer and a single-sided polishing method for polishing only one side are used, and after polishing by the double-sided polishing method, it is also necessary to sequentially perform multi-stage polishing by the single-sided polishing method.
Unlike single-sided chemical mechanical polishing, the silicon wafer position during double-sided polishing is not fixed, but a planetary-like motion is performed. In the double-sided polishing process, the silicon wafer is clamped by the planetary wheel, and the movement track of the silicon wafer is determined by the movement of the inner pin ring and the outer pin ring, as shown in fig. 1. The disadvantages during this polishing process are mainly manifested in the following two points:
1) The movement speed of the silicon wafer can be adjusted only by controlling the relative rotation speed of the inner pin ring and the outer pin ring, and the rotation speed of the planetary wheel and the silicon wafer cannot be directly controlled;
2) In order to prevent the pollution source caused by external dust to the polishing process, the DSP equipment is always in a closed state in the working process, and the position and the movement track of the wafer are difficult to observe in real time.
Accordingly, there is a need to provide an improved solution to the above-mentioned deficiencies in the prior art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a method for calculating a polishing motion track of a silicon wafer, which decomposes polishing motion of the silicon wafer, converts rotation speeds of an inner pin ring and an outer pin ring into revolution speeds and rotation speeds of a star wheel and the silicon wafer, and simulates and restores the motion track of the silicon wafer in a machine platform through a connecting rod structure, so as to calculate the motion track of any point on the silicon wafer, and solve the problems in the prior art that the rotation speed of the silicon wafer cannot be directly adjusted, the motion track of the silicon wafer cannot be observed, and the like.
To achieve the above and other related objects, the present application provides a method for calculating a polishing motion trajectory of a silicon wafer, the method at least comprising the following steps:
s1: acquiring operation parameters of polishing equipment, wherein the operation parameters comprise an inner pin ring angular speed W, an outer pin ring angular speed W, an inner pin ring radius R and an outer pin ring radius R;
s2: converting the acquired operation parameters into the motion parameters of the star wheels in the polishing equipment;
s3: establishing a calculation model, and obtaining the motion trail of the star wheel according to the motion parameters of the star wheel;
s4: and obtaining the motion trail of the silicon wafer based on the calculation model according to the motion trail of the star wheel.
In one embodiment, in step S2, the motion parameters of the star wheel include:
W center ＝(W*R+w*r)/(R+r)
W self ＝(W*R-w*r)/(R-r)
wherein,
W center the revolution angular velocity of the planetary wheel is set;
W self and the rotation angular speed of the star wheel is the rotation angular speed of the star wheel.
In one embodiment, the computational model employs a linkage model.
In one embodiment, in step S3, a time parameter for forming a motion track of the star wheel is set based on the link mechanism model, so as to obtain a revolution angle of the star wheel and a rotation angle of the star wheel:
A center ＝W center *t
A self ＝W self *t
the motion trail (x) of the star wheel is obtained by converting the polar coordinate system into a rectangular coordinate system 1 ，y 1 )：
x 1 ＝(r+L 1 )*cos(A center )
y 1 ＝(r+L 1 )*sin(A center )
Wherein,
A center the revolution angle of the star wheel is the revolution angle of the star wheel;
A self the rotation angle of the star wheel is set;
t is a time parameter;
l1 is the radius of the star wheel.
In one embodiment, step S4 further comprises acquiring individual trajectories (x 2 ，y 2 ) Comprises the steps of:
x 2 ＝(L 1 -L 2 )*cos(A center +A self )
y 2 ＝(L 1 -L 2 )*sin(A center +A self )
wherein,
l2 is the radius of the silicon wafer.
In one embodiment, in step S4, the movement track (x 1 ，y 1 ) On the basis of (a) the individual trajectories (x 2 ，y 2 ) To obtain the motion trail (x 3 ，y 3 )：
x 3 ＝(r+L 1 )*cos(A center )+(L 1 -L 2 )*cos(A center +A self )
y 3 ＝(r+L 1 )*sin(A center )+(L 1 -L 2 )*sin(A center +A self )。
In one embodiment, the operating parameters of the polishing apparatus further comprise an upper polishing pad angular velocity Wu; the computing method further includes the step of obtaining a relative trajectory of the silicon wafer and the upper polishing pad.
In one embodiment, the operating parameters of the polishing apparatus further comprise a lower polishing pad angular velocity Wd; the computing method further includes the step of obtaining a relative trajectory of the silicon wafer and the lower polishing pad.
In one embodiment, the silicon wafer polishing device at least comprises one planetary wheel for placing the silicon wafer.
In one embodiment, the star wheel is internally provided with a plurality of silicon wafers, and the silicon wafers are distributed on the star wheel at equal angular intervals around the center of the star wheel.
Compared with the prior art, the technical scheme provided by the application has the following beneficial effects:
the calculation method of the silicon wafer polishing motion trail is characterized by acquiring operation parameters of polishing equipment in advance: the method comprises the steps of converting the acquired running parameters of equipment into more visual and easy-to-calculate running parameters of the running star wheel, then establishing a calculation model, converting the acquired running parameters of the running star wheel into the running track of the running star wheel, superposing independent tracks of the silicon wafer on the running track of the running star wheel to obtain the final running track of the silicon wafer, converting the rotating speeds of the inner pin ring and the outer pin ring into the revolution speeds and the autorotation speeds of the running star wheel and the silicon wafer, simulating the running track of the silicon wafer in a machine table through a simple connecting rod structure, and realizing real-time monitoring of the position and the running track of the silicon wafer in the working process of the DSP equipment always in a closed state.
Drawings
FIG. 1 is a schematic diagram of a prior art double-sided polishing apparatus for silicon wafers;
FIG. 2 is a schematic diagram of the motion profile of a silicon wafer in a polishing process;
FIG. 3 is a motion profile model of a silicon wafer in a polishing process;
fig. 4 is a top view of a polishing apparatus in an embodiment of the present application.
Reference numerals illustrate:
100. an outer pin ring;
200. an inner pin ring;
300. a star wheel;
400. and (3) a silicon wafer.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application.
It should be noted that, the illustrations provided in the present embodiment only illustrate the basic concept of the present invention by way of illustration, but only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number, positional relationship and proportion of each component in actual implementation may be changed at will on the premise of implementing the present technical solution, and the layout of the components may be more complex.
In the silicon wafer polishing process, the formation of the polishing surface mainly depends on the relative motion track between the polishing pad and the planetary wheel or the relative motion track between the polishing pad and the silicon wafer clamped by the planetary wheel. In the actual polishing process, the polishing pad and the star wheel/silicon wafer can be simplified into two planes which do relative plane movement, and the relative movement track between the two planes is considered to be the same: the motion track of the star wheel/silicon wafer relative to the polishing pad is the same as the motion track of the polishing pad relative to the star wheel/silicon wafer, and the directions are opposite. The following describes a method for calculating the movement track of the star wheel/silicon wafer provided by the application through a specific embodiment.
Example 1:
the embodiment provides a calculation method of a silicon wafer polishing motion trail. It will be appreciated that the motion diagram of the double-sided polishing apparatus is shown in fig. 1, and the upper polishing pad and the lower polishing pad are fixed to the surfaces of the upper polishing pad and the lower polishing pad, respectively, and the silicon wafer 400 to be polished is placed in a differential gear train consisting of the inner pin ring 200 and the outer pin ring 100, and the polishing pressure is realized by pressurizing the polishing pad by a cylinder (not shown). In order to balance the force exerted on the silicon wafer 400 during polishing, a polishing mode may be selected in which the upper polishing pad and the lower polishing pad are rotated at angular velocities equal in magnitude and opposite in direction, respectively, and in other cases, in order to selectively polish the upper surface and the lower surface of the silicon wafer 400, the rotational speeds of the upper polishing pad and the lower polishing pad may be adjusted differently. The movement of the silicon wafer 400 is driven by the planetary wheel 300 while rotating under the pressure of the upper and lower polishing pads, so that the movement track of the silicon wafer 400 is a combined movement track of the planetary movement and the rotating movement.
Aiming at the analysis of the operation principle of the silicon wafer polishing equipment, the embodiment provides a calculation method of a motion track, which comprises the following steps:
s1: the method comprises the steps of obtaining operation parameters of the polishing equipment, wherein the operation parameters comprise an inner pin ring angular speed W, an outer pin ring angular speed W, an inner pin ring radius R and an outer pin ring radius R.
Specifically, in the double-sided polishing process, the silicon wafer 400 is clamped by the star wheel 300, the movement track of the silicon wafer 400 is determined by the movement of the inner pin ring 200 and the outer pin ring 100, on the premise that the dimensional parameters of the inner pin ring 200 and the outer pin ring 100 are fixed, the movement parameters of the star wheel 300 and the silicon wafer 400 are determined by adjusting the rotation speeds of the inner pin ring 200 and the outer pin ring 100, and the upper polishing pad, the lower polishing pad and the star wheel 300/the silicon wafer 400 are two planes which do relative plane movement, so that the relative movement track between the two planes is the same, therefore, only the inherent parameters of equipment, such as the radius R of the inner pin ring and the radius R of the outer pin ring, and the adjustable parameters of the equipment, such as the angular speed W of the inner pin ring and the angular speed W of the outer pin ring, can be obtained through a calculation model.
S2: the acquired operation parameters are converted into the motion parameters of the star wheel 300 in the polishing apparatus.
Specifically, since the linear velocity of the contact point between the inner pin ring 200 and the planet 300 is the same as the linear velocity of the contact point between the planet 300 and the outer pin ring 100, the angular velocity of the planet is selected as the motion parameter required in the calculation model, and the method for calculating the angular velocity of the planet is as follows:
W center ＝(W*R+w*r)/(R+r)
W self ＝(W*R-w*r)/(R-r)
wherein,
W center the revolution angular velocity of the star wheel;
W self is the rotation angular velocity of the star wheel.
It can be appreciated that the motion parameters of the star wheel 300 in the polishing apparatus are not limited to the angular velocity thereof, and the obtained motion parameters are converted into the linear velocity of the star wheel 300, which is also suitable for using the calculation model in the present application to obtain the motion trail information of the silicon wafer 400.
S3: and establishing a calculation model, and obtaining the movement track of the star wheel 300 according to the angular speed or linear speed parameters of the star wheel 300.
Specifically, in the planetary gear transmission mechanism, the inner pin ring 200 and the outer pin ring 100 rotate simultaneously, and the planetary gear 300 rotates while revolving around the inner pin ring 200, so as to form the effect of planetary motion, and the transmission structure has the characteristics of compactness, high torque transmission capability, good parallelism and the like, is widely applied in the field of mechanical polishing and grinding, and a calculation model in the application adopts a link mechanism model, see fig. 3, simplifies the multi-body dynamics modeling of complex planetary motion into planetary-like revolution and rotation motion, and sets time parameters forming the motion track of the planetary gear 300 based on the link mechanism model so as to obtain the revolution angle of the planetary gear 300 and the rotation angle of the planetary gear 300, and the calculation method is as follows:
A center ＝W center *t
A self ＝W self *t
the motion trajectory (x) of the star wheel 300 is then obtained by converting the polar coordinate system into a rectangular coordinate system 1 ，y 1 )：
x 1 ＝(r+L 1 )*cos(A center )
y 1 ＝(r+L 1 )*sin(A center )
Wherein,
A center is the revolution angle of the star wheel;
A self is the rotation angle of the star wheel;
t is a time parameter;
l1 is the radius of the star wheel.
S4: according to the motion trail of the star wheel 300, the motion trail of the silicon wafer 400 is obtained based on a calculation model.
Specifically, since the planetary-like motion trajectory of the silicon wafer 400 is a composite motion trajectory of the planetary motion and the rotation motion, the independent trajectory (x 2 ，y 2 )：
x 2 ＝(L 1 -L 2 )*cos(A center +A self )
y 2 ＝(L 1 -L 2 )*sin(A center +A self )
Wherein,
L 2 is the radius of the silicon wafer.
Subsequently, the movement trace (x 1 ，y 1 ) On the basis of (a) the individual tracks (x 2 ，y 2 ) To obtain the motion trace (x) 3 ，y 3 )：
x 3 ＝(r+L 1 )*cos(A center )+(L 1 -L 2 )*cos(A center +A self )
y 3 ＝(r+L 1 )*sin(A center )+(L 1 -L 2 )*sin(A center +A self )
It will be appreciated that, referring to fig. 3, as the star wheel 300 rotates, the path of movement may be reduced to a linkage. Fig. 3 illustrates an example of kinematic software ADAMS, which constructs a simple linkage model. There are 3 points in the figure, O 1 Is the center of the circle of the inner pin ring 200, O 2 Is the center of a planet wheel, O 3 Is the center of one of the silicon wafers 400 on the planet. O (O) 2 By O 1 The movement of the center of the circle represents the revolution of the star wheel 300, O 3 By O 2 The movement to the center of a circle may represent the spin of the star wheel 300. I.e. lower connecting rod with O 1 As the center of a circle, W center Is the angular velocity; upper connecting rod is O 2 As the center of a circle, W self The locus shown by the arrow at the upper part is the circle center O for angular velocity 3 The moving time of the path is the time of one circle of rotation of the star wheel 300, and the track shown by the arrow below is the circle center O 2 The travel time of the traveling path is the revolution time of the star wheel 300. The method is not limited to the calculation of the motion trail by ADAMS, and can also be calculated by other kinematic software.
Example 2:
the present embodiment also provides a method for calculating a motion profile for calculating a relative motion profile of the silicon wafer 400 with respect to the upper polishing pad and the lower polishing pad. The calculation method comprises the following steps:
s1: the method comprises the steps of obtaining operation parameters of the polishing equipment, wherein the operation parameters comprise an inner pin ring angular speed W, an outer pin ring angular speed W, an inner pin ring radius R and an outer pin ring radius R.
It will be appreciated that this embodiment differs from embodiment 1 in that: in one embodiment, the operating parameters of the polishing apparatus further include an upper polishing pad angular velocity W u The method comprises the steps of carrying out a first treatment on the surface of the The calculation method further includes the step of obtaining the relative track of the silicon wafer 400 and the upper polishing pad;
it will be appreciated that this embodiment differs from embodiment 1 in that: in one embodiment, the operating parameters of the polishing apparatus further include the lower polishing pad angular velocity W d The method comprises the steps of carrying out a first treatment on the surface of the The calculation method further includes the step of obtaining the relative trajectories of the silicon wafer 400 and the lower polishing pad.
S2: the acquired operating parameters are converted into relative motion parameters of the star wheel 300 in the polishing apparatus.
Specifically, the angular velocity of the star wheel is also selected as a motion parameter required in the calculation model, and the calculation method of the angular velocity and the relative angular velocity of the star wheel is as follows:
W center ＝(W*R+w*r)/(R+r)
W self ＝(W*R-w*r)/(R-r)
W u-center ＝(W*R+w*r)/(R+r)-W u
W d-center ＝(W*R+w*r)/(R+r)-W d
wherein,
W center the revolution angular velocity of the star wheel;
W self is the rotation angular velocity of the star wheel;
W u-center the revolution angular velocity of the star wheel relative to the upper polishing pad;
W d-center is the revolution angular velocity of the star wheel relative to the lower polishing pad.
S3: and establishing a calculation model, and obtaining the relative motion track of the star wheel 300 and the upper polishing pad and the lower polishing pad according to the angular speed or linear speed parameters of the star wheel 300.
It will be understood that, in order to pointedly polish the upper surface and the lower surface of the silicon wafer 400, the rotational speeds of the upper polishing pad and the lower polishing pad are differentially adjusted, and therefore, it is necessary to obtain the relative motion trajectory to obtain an accurate polishing path, and based on the link mechanism model in embodiment 1, the time parameters forming the motion trajectory of the star wheel 300 are set to obtain the relative revolution angle of the star wheel 300 and the rotation angle of the star wheel 300, and the calculation method is as follows:
A u-center ＝W u-center *t
A d-center ＝W d-center *t
A self ＝W self *t
the relative motion trajectory (x) of the star wheel 300 with respect to the upper polishing pad is then obtained by converting the polar coordinate system into a rectangular coordinate system 1u ，y 1u )：
x 1u ＝(r+L 1 )*cos(A u-center )
y 1u ＝(r+L 1 )*sin(A u-center )
At the same time, a relative motion trace (x) of the star wheel 300 with respect to the lower polishing pad can be obtained 1d ，y 1d )：
x 1d ＝(r+L 1 )*cos(A d-center )
y 1d ＝(r+L 1 )*sin(A d-center )
Wherein,
A center is the revolution angle of the star wheel;
A self is the rotation angle of the star wheel;
A u-center the revolution angle of the planetary wheel relative to the upper polishing pad;
A d-center the revolution angle of the planetary wheel relative to the lower polishing pad;
t is a time parameter;
L 1 is the radius of the star wheel.
S4: the relative motion track of the silicon wafer 400 is obtained based on the calculation model according to the relative motion track of the star wheel 300 and the upper polishing pad and the lower polishing pad.
Specifically, since the planetary-like motion trajectory of the silicon wafer 400 is a composite motion trajectory of the planetary motion and the rotation motion, the silicon is first acquiredThe individual tracks (x of the patch 400 2u ，y 2u )：
x 2u ＝(L 1 -L 2 )*cos(A u-center +A self )
y 2u ＝(L 1 -L 2 )*sin(A u-center +A self )
Wherein,
L 2 is the radius of the silicon wafer.
Subsequently, the movement trace (x 1u ，y 1u ) On the basis of (a) the individual tracks (x 2u ，y 2u ) To obtain a motion profile (x) of the silicon wafer 400 relative to the upper polishing pad 3u ，y 3u )：
x 3u ＝(r+L 1 )*cos(A center )+(L 1 -L 2 )*cos(A center +A self )
y 3u ＝(r+L 1 )*sin(A center )+(L 1 -L 2 )*sin(A center +A self )
It will be appreciated that the wafer 400 moves along a trajectory (x 3d ，y 3d ) And is similarly available according to the calculation model, and will not be described herein.
In one embodiment, referring to fig. 4, the silicon wafer polishing apparatus at least includes one star wheel 300 for placing the silicon wafer 400, in order to improve the polishing efficiency of the silicon wafer 400, a plurality of star wheels 300 may be placed in the polishing apparatus to clamp more silicon wafers 400, and each star wheel 300 and the motion track of the silicon wafer 400 clamped by each star wheel may be offset by a dislocation angle based on the track in the above example.
In one embodiment, with continued reference to fig. 4, a plurality of silicon wafers 400 are built in the star wheel 300, the silicon wafers 400 are equiangularly distributed on the star wheel 300 around the center of the star wheel 300, and on the basis of the calculation model of the above example, the motion track and the relative motion track of each silicon wafer 400 can be obtained by the calculation method of the present application, or by setting a motion track/relative motion track of a silicon wafer 400 as a reference, and performing angular offset on the basis of the track of the reference silicon wafer 400, so as to obtain the motion track/relative motion track of any silicon wafer 400.
In addition, on the basis of the above embodiment, a contact model and a wear model based on a finite element method are established, the conversion from the process parameters to the actual motion condition of the workpiece, namely, the conversion from the rotation speed of the inner pin ring and the rotation speed of the outer pin ring to the actual motion condition of the silicon wafer 400 is completed, the double-sided polishing motion of the silicon wafer 400 is decomposed, the rotation speeds of the inner pin ring 200 and the outer pin ring 100 are converted into the revolution speeds and the rotation speeds of the planetary wheel 300 and the silicon wafer 400, the motion track of the silicon wafer 400 in a machine platform is simulated and reduced through a connecting rod structure, so that the motion track of any point on the silicon wafer 400 is calculated, the motion track of the silicon wafer is judged by an auxiliary process, and when the silicon wafer 400 has a concave or convex structural defect, the calculation model can be adopted to obtain the defect track, and the scratch source is confirmed by reverse thrust.
In summary, the present application provides a method for calculating a polishing motion track of a silicon wafer, where the method includes obtaining operation parameters of polishing equipment in advance: the method comprises the steps of converting the acquired running parameters of equipment into more visual and easy-to-calculate running parameters of the running star wheel, then establishing a calculation model, converting the acquired running parameters of the running star wheel into the running track of the running star wheel, superposing independent tracks of the silicon wafer on the running track of the running star wheel to obtain the final running track of the silicon wafer, converting the rotating speeds of the inner pin ring and the outer pin ring into the revolution speeds and the autorotation speeds of the running star wheel and the silicon wafer, simulating the running track of the silicon wafer in a machine table through a simple connecting rod structure, and realizing real-time monitoring of the position and the running track of the silicon wafer in the working process of the DSP equipment always in a closed state. Therefore, the method effectively overcomes various defects in the prior art and has high industrial utilization value and popularization.
The foregoing embodiments are merely illustrative of the principles of the present application and their effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those of ordinary skill in the art without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications and variations which may be accomplished by persons skilled in the art without departing from the spirit and technical spirit of the disclosure be covered by the claims of this application.
Claims (7)
1. The calculation method of the silicon wafer polishing motion trail is characterized by at least comprising the following steps:
s1: acquiring operation parameters of polishing equipment, wherein the operation parameters comprise an inner pin ring angular speed W, an outer pin ring angular speed W, an inner pin ring radius R and an outer pin ring radius R;
s2: the acquired operation parameters are converted into the motion parameters of the star wheels in the polishing equipment, and the conversion method is as follows:
W center ＝(W*R+w*r)/(R+r)
W self ＝(W*R-w*r)/(R-r)
wherein,
W center the revolution angular velocity of the planetary wheel is set;
W self the rotation angular speed of the star wheel is set as the rotation angular speed of the star wheel;
s3: establishing a link mechanism model, and setting time parameters forming a motion track of the planetary wheel so as to acquire a revolution angle of the planetary wheel and a rotation angle of the planetary wheel:
A center ＝W center *t
A self ＝W self *t
the motion trail (x) of the star wheel is obtained by converting the polar coordinate system into a rectangular coordinate system 1 ，y 1 )：
x 1 ＝(r+L 1 )*cos(A center )
y 1 ＝(r+L 1 )*sin(A center )
Wherein,
A center the revolution angle of the star wheel is the revolution angle of the star wheel;
A self the rotation angle of the star wheel is set;
t is a time parameter;
L 1 radius of the star wheel;
s4: and obtaining the motion trail of the silicon wafer based on the link mechanism model according to the motion trail of the star wheel.
2. The method according to claim 1, wherein step S4 further comprises obtaining an independent track (x 2 ，y 2 ) Comprises the steps of:
x 2 ＝(L 1 -L 2 )*cos(A center +A self )
y 2 ＝(L 1 -L 2 )*sin(A center +A self )
wherein,
L 2 is the radius of the silicon wafer.
3. The method according to claim 2, wherein in step S4, the motion trajectory (x 1 ，y 1 ) On the basis of (a) the individual trajectories (x 2 ，y 2 ) To obtain the motion trail (x 3 ，y 3 )：
x 3 ＝(r+L 1 )*cos(A center )+(L 1 -L 2 )*cos(A center +A self )
y 3 ＝(r+L 1 )*sin(A center )+(L 1 -L 2 )*sin(A center +A self )。
4. The method for calculating a polishing motion profile of a silicon wafer according to claim 1, wherein,
the operating parameters of the polishing apparatus further include an upper polishing pad angular velocity W u ；
The computing method further includes the step of obtaining a relative trajectory of the silicon wafer and the upper polishing pad.
5. The method for calculating a polishing motion profile of a silicon wafer according to claim 1, wherein,
the operating parameters of the polishing apparatus further include a lower polishing pad angular velocity W d ；
The computing method further includes the step of obtaining a relative trajectory of the silicon wafer and the lower polishing pad.
6. The method of claim 1, wherein the silicon wafer polishing apparatus comprises at least one planetary wheel for placing a silicon wafer.
7. The method for calculating a polishing motion path of a silicon wafer according to claim 6, wherein a plurality of silicon wafers are arranged in the star wheel, and the silicon wafers are distributed on the star wheel at equal angular intervals around the center of the star wheel.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105458902A (en) * | 2015-12-01 | 2016-04-06 | 天津理工大学 | Microstructural surface three-dimensional elliptic vibration ultraprecision polishing method |
| WO2021149564A1 (en) * | 2020-01-20 | 2021-07-29 | ファナック株式会社 | Polishing amount estimation device |
| WO2021238747A1 (en) * | 2020-05-26 | 2021-12-02 | 三一专用汽车有限责任公司 | Method and apparatus for controlling lateral motion of self-driving vehicle, and self-driving vehicle |
| WO2022121012A1 (en) * | 2020-12-08 | 2022-06-16 | 天通控股股份有限公司 | Method for processing large-size ultra-thin high-precision lithium niobate wafer |
| CN217750973U (en) * | 2022-06-15 | 2022-11-08 | 哈尔滨秋冠光电科技有限公司 | Sapphire wafer single face grinds processing structure |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105458902A (en) * | 2015-12-01 | 2016-04-06 | 天津理工大学 | Microstructural surface three-dimensional elliptic vibration ultraprecision polishing method |
| WO2021149564A1 (en) * | 2020-01-20 | 2021-07-29 | ファナック株式会社 | Polishing amount estimation device |
| WO2021238747A1 (en) * | 2020-05-26 | 2021-12-02 | 三一专用汽车有限责任公司 | Method and apparatus for controlling lateral motion of self-driving vehicle, and self-driving vehicle |
| WO2022121012A1 (en) * | 2020-12-08 | 2022-06-16 | 天通控股股份有限公司 | Method for processing large-size ultra-thin high-precision lithium niobate wafer |
| CN217750973U (en) * | 2022-06-15 | 2022-11-08 | 哈尔滨秋冠光电科技有限公司 | Sapphire wafer single face grinds processing structure |
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