CN116845126A - Vertical incidence photoelectric detector with double PN junction structure and semiconductor device - Google Patents
Vertical incidence photoelectric detector with double PN junction structure and semiconductor device Download PDFInfo
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- CN116845126A CN116845126A CN202310065550.0A CN202310065550A CN116845126A CN 116845126 A CN116845126 A CN 116845126A CN 202310065550 A CN202310065550 A CN 202310065550A CN 116845126 A CN116845126 A CN 116845126A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000006096 absorbing agent Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 230000009977 dual effect Effects 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a vertical incidence photoelectric detector with a double PN junction structure and semiconductor equipment, wherein the photoelectric detector comprises: a substrate layer; an absorber layer formed on the substrate layer; the two n-type doped regions are formed by n-doping the substrate layer and are positioned on two opposite sides of the absorption layer; the two p-type doped regions are formed by p-doping the substrate layer and are positioned on the other two opposite sides of the absorption layer; the adjacent n-type doped region and p-type doped region form four electrodes of a pn junction, and the four electrodes are respectively arranged on the 4 doped regions. The invention adopts four electrode structures, thus enhancing the distribution of electric field on the absorption layer, reducing power supply voltage under the same electric field, simultaneously forming pn junction by the adjacent n-type doped region and p-type doped region, increasing junction area, namely increasing the area of effective absorption region of the absorption layer.
Description
Technical Field
The invention relates to the field of photoelectric detection, in particular to a vertical incidence photoelectric detector with a double PN junction structure and semiconductor equipment.
Background
In recent years, with the rapid development of the internet of things, an optical communication system is an important support of the internet of things, and the development of the optical communication system is more emphasized. In the field of long-distance backbone networks, along with the maturation and development of optical transmission technologies, the construction hot tide of trunk transmission networks appears worldwide, and the transmission bandwidth and transmission capacity rapidly develop.
With the development of optical communication systems, the development of optical devices also faces opportunities and challenges, and how to develop optical devices with excellent performance and low cost has become a primary problem. Silicon-based optoelectronic devices have the advantages of easy integration, low process cost, etc., and have attracted considerable attention from researchers in recent years. Silicon (Si) materials are used as traditional materials in the field of microelectronics, have incomparable advantages in processing technology and manufacturing cost as other materials, and silicon-based optoelectronic integration technology has been developed. A photodetector, which is one of the important representative elements in silicon-based optoelectronics integration technology, functions to convert an incident optical signal into an electrical signal for subsequent analysis by signal processing circuitry. Silicon-based germanium photoelectric detectors have been developed for over ten years, and are continuously optimized in structure, and the performance is further improved.
In recent years, under the continuous innovative efforts of academia and industry, various silicon-based photodetectors with high performance indexes are continuously proposed and optimized, and part of indexes reach the level of commercial lithium niobate and III-V photodetectors. However, the current silicon-based photoelectric detector still has the problems of high power supply voltage and the like, so that the application of the silicon-based photoelectric detector in some fields is limited.
Disclosure of Invention
In view of the above, it is an object of the present invention to provide a dual PN junction structure vertical incidence photodetector and a semiconductor device, which can improve the above-mentioned problems.
The embodiment of the invention provides a vertical incidence photoelectric detector with a double PN junction structure, which comprises the following components:
a substrate layer;
an absorber layer formed on the substrate layer;
the two n-type doped regions are formed by n-doping the substrate layer and are positioned on two opposite sides of the absorption layer;
the two p-type doped regions are formed by p-doping the substrate layer and are positioned on the other two opposite sides of the absorption layer; wherein adjacent n-type doped region and p-type doped region form pn junction
Four electrodes are respectively arranged on the 4 doped regions.
Preferably, the substrate layer is a silicon substrate.
Preferably, the absorption layer is a germanium absorption layer.
Preferably, the absorption layer is square in projection onto the substrate layer.
Preferably, the electrode is disposed at an end of the doped region remote from the absorber layer.
The embodiment of the invention also provides a semiconductor device which comprises the vertical incidence photoelectric detector with the double PN junction structure.
In summary, compared with the prior art, the present embodiment has at least the following advantages:
(1) The electrode is far away from the germanium absorption region, so that the absorption loss of the electrode to light is reduced, and the loss of responsiveness is reduced;
(2) The four electrode structures are adopted, so that the distribution of the electric field on the absorption layer is enhanced, and the power supply voltage is reduced under the same electric field;
(3) The adjacent n-type doped region and p-type doped region both form a pn junction, increasing the junction area, i.e., the area of the effective absorption region of the absorption layer.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a top view of a vertical incidence photodetector with a dual PN junction structure according to an embodiment of the present invention.
Fig. 2 is a side view of a vertical incidence photodetector with a dual PN junction structure according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 and 2, an embodiment of the present invention provides a dual PN junction structure vertical incidence photodetector, which includes:
a substrate layer 10.
In this embodiment, in particular, the substrate layer 10 is a silicon substrate, which provides support for the entire detector.
An absorber layer 20 formed on the substrate layer 10.
In this embodiment, the absorber layer 20 is, in particular, a germanium absorber layer which is formed on the substrate layer 10, in particular, just in the middle region of the substrate layer 10, and whose projection onto the substrate layer 10 is square.
Two n-type doped regions 30 formed by n-doping the substrate layer 10 and located on opposite sides of the absorption layer 20;
two p-type doped regions 40 formed by p-doping the substrate layer 10 and located on opposite sides of the absorption layer 20; wherein adjacent n-type doped region 30 and p-type doped region 40 each form a pn junction.
In this embodiment, n-doping means to dope a pentavalent impurity element (e.g., phosphorus, arsenic) on a silicon substrate, and P-doping means to dope a trivalent impurity element (e.g., boron, gallium) on a silicon substrate. At this time, the adjacent n-type doped region 30 and p-type doped region 40 are formed as a space charge region at their boundary by diffusion, which is called a pn junction.
Four electrodes 50 are provided on the 4 doped regions, respectively.
In this embodiment, in particular, the two n-type doped regions 30 and the two p-type doped regions 40 have one end close to the absorber layer 20 and one end far away. Wherein, the end close to the absorption layer 20 is in contact with the absorption layer 20, and the four electrodes 50 are disposed at the end far from the absorption layer 20.
In summary, compared with the prior art, the present embodiment has at least the following advantages:
(1) The electrode is far away from the germanium absorption region, so that the absorption loss of the electrode to light is reduced, and the loss of responsiveness is reduced;
(2) The four-electrode structure is adopted, so that the distribution of the electric field on the absorption layer 20 is enhanced, and the power supply voltage is reduced under the same electric field;
(3) The adjacent n-type doped regions and p-type doped regions each form a pn junction, increasing the junction area, i.e., the area of the effective absorption region of the absorption layer 20.
In addition, it should be noted that the structure of the electrode and the doped region of the present embodiment can be applied to other semiconductor devices, and is not limited to the present embodiment.
The embodiment of the invention also provides a semiconductor device which comprises the vertical incidence photoelectric detector with the double PN junction structure.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A dual PN junction structured normally incident photodetector, comprising:
a substrate layer;
an absorber layer formed on the substrate layer;
the two n-type doped regions are formed by n-doping the substrate layer and are positioned on two opposite sides of the absorption layer;
the two p-type doped regions are formed by p-doping the substrate layer and are positioned on the other two opposite sides of the absorption layer; wherein, the adjacent n-type doped region and p-type doped region form a pn junction;
four electrodes are respectively arranged on the 4 doped regions.
2. The dual PN junction structured vertical incidence photodetector of claim 1, wherein said substrate layer is a silicon substrate.
3. The dual PN junction structured vertical incidence photodetector of claim 1, wherein said absorption layer is a germanium absorption layer.
4. The dual PN junction structured normal incidence photodetector of claim 1, wherein said absorption layer is square in projection onto a substrate layer.
5. The dual PN junction structured vertical incidence photodetector of claim 1, wherein said electrode is disposed at an end of the doped region remote from said absorber layer.
6. A semiconductor device comprising the dual PN junction structure of any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310065550.0A CN116845126A (en) | 2023-01-16 | 2023-01-16 | Vertical incidence photoelectric detector with double PN junction structure and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310065550.0A CN116845126A (en) | 2023-01-16 | 2023-01-16 | Vertical incidence photoelectric detector with double PN junction structure and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116845126A true CN116845126A (en) | 2023-10-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310065550.0A Pending CN116845126A (en) | 2023-01-16 | 2023-01-16 | Vertical incidence photoelectric detector with double PN junction structure and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116845126A (en) |
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2023
- 2023-01-16 CN CN202310065550.0A patent/CN116845126A/en active Pending
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