CN116841060A - Optical chip, optical module and communication equipment - Google Patents
Optical chip, optical module and communication equipment Download PDFInfo
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- CN116841060A CN116841060A CN202210307693.3A CN202210307693A CN116841060A CN 116841060 A CN116841060 A CN 116841060A CN 202210307693 A CN202210307693 A CN 202210307693A CN 116841060 A CN116841060 A CN 116841060A
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- 238000004891 communication Methods 0.000 title claims abstract description 23
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- 239000000758 substrate Substances 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 15
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 150000002500 ions Chemical class 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Abstract
The application provides an optical chip, an optical module and communication equipment, the optical chip comprises: a semiconductor substrate, and a silicon waveguide layer, a silicon nitride waveguide layer, an electro-optic modulator, and a photodetector over the semiconductor substrate. The photodetector includes: the germanium intrinsic structure is provided with a P-type doped region and an N-type doped region which are positioned at two sides of the germanium intrinsic structure; the germanium intrinsic structure, the P-type doped region and the N-type doped region are integrated within the silicon waveguide layer. The silicon nitride waveguide layer is positioned on one side of the silicon waveguide layer facing away from the semiconductor substrate, and the electro-optic modulator is positioned on one side of the silicon nitride waveguide layer facing away from the semiconductor substrate. The optical chip in the embodiment of the application has higher integration level, and can reduce the size, the cost and the power consumption of the optical module when being applied to the optical module.
Description
Technical Field
The present application relates to the field of optical communications technologies, and in particular, to an optical chip, an optical module, and a communication device.
Background
With the development of internet technology, the demand for network bandwidth by humans is growing rapidly. The increasing demands of people are effectively solved by the proposal of flexible optical networks, the development of coherent technology, the improvement of the integration level of optical networks and the like. With the continuous improvement of the integration level of optical communication systems, optical modules are developing to high speed, miniaturization, low cost, low power consumption and the like.
The high-speed electro-optical modulator and the high-speed photoelectric detector are used as core interfaces for converting from an electric domain to an optical domain/optical domain to an electric domain in an optical network, and are widely applied to a large-capacity long-distance coherent communication system, and the speed, the size, the cost and the power consumption of the whole optical module can be directly influenced by optical devices and the form of an optical chip.
However, in the related art, the optical chip has a low integration level, so that the size of the optical module cannot be reduced, and the power consumption of the optical module cannot be further reduced.
Disclosure of Invention
The embodiment of the application provides an optical chip, an optical module and communication equipment, which are used for solving the problems that the size of the optical module cannot be reduced and the power consumption cannot be reduced due to the low integration level of the optical chip in the related technology.
In a first aspect, an embodiment of the present application provides an optical chip. The optical chip provided by the embodiment of the application can comprise: a semiconductor substrate, and a silicon waveguide layer, a silicon nitride waveguide layer, an electro-optic modulator, and a photodetector over the semiconductor substrate. The photodetector may include: the germanium intrinsic structure, the P-type doped region and the N-type doped region are integrated in the silicon waveguide layer. The silicon nitride waveguide layer is positioned on one side of the silicon waveguide layer facing away from the semiconductor substrate, and the electro-optic modulator is positioned on one side of the silicon nitride waveguide layer facing away from the semiconductor substrate.
The optical chip provided by the embodiment of the application can integrate various materials and realize integration of various high-performance passive structures by arranging the silicon waveguide layer, the silicon nitride waveguide layer, the electro-optic modulator and the photoelectric detector. In addition, the photoelectric detector can be integrated with the silicon waveguide layer, so that the integration level of the optical chip is further improved. Therefore, the optical chip in the embodiment of the application has higher integration level. Furthermore, the optical chip is applied to the optical module, so that the size, cost and power consumption of the optical module can be reduced.
In one possible implementation manner, the optical chip in the embodiment of the application can integrate a coherent transmitter and a receiver to realize a transceiver integrated arrangement. Therefore, the optical chip in the embodiment of the application has the advantages of integration of transceiver, high bandwidth, no refrigeration, small-size non-airtight package, high integration level and the like.
In specific implementation, an insulating medium layer is arranged between the semiconductor substrate and the silicon waveguide layer, an insulating medium layer is arranged between the silicon waveguide layer and the silicon nitride waveguide layer, and an insulating medium layer is arranged between the silicon nitride waveguide layer and the electro-optical modulator. That is, in the optical chip according to the embodiment of the present application, an insulating medium layer is disposed between two adjacent conductive film layers, so as to insulate different conductive components. Alternatively, the material of the insulating dielectric layer may include silicon dioxide, and other materials may be used for the insulating dielectric layer, which is not limited herein.
In an embodiment of the present application, the silicon waveguide layer may include: the silicon waveguide may, of course, also have other components provided therein, which are not limited herein.
In one possible implementation, the silicon waveguide layer is provided with a recess on a side facing away from the semiconductor substrate, the germanium intrinsic structure being located in the recess, the P-type doped region and the N-type doped region being located on both sides of the recess in the silicon waveguide layer. The germanium intrinsic structure can form a P-type-intrinsic-N-type junction with P-type doped regions and N-type doped regions at two sides so as to realize the function of a germanium photodiode (Ge PD). In the actual process, P-type ions can be doped in one area of the silicon waveguide layer to form a P-type doped area, N-type ions are doped in the other area of the silicon waveguide layer to form an N-type doped area, then a groove is formed between the P-type doped area and the N-type doped area, and a germanium intrinsic structure can be formed in the groove in an epitaxial growth mode, so that the germanium intrinsic structure, the P-type doped area and the N-type doped area are integrated in the silicon waveguide layer, and the integration of the photoelectric detector and the silicon waveguide layer is realized.
In the embodiment of the application, the silicon nitride waveguide layer is positioned on one side of the silicon waveguide layer, which is away from the semiconductor substrate, and the silicon nitride waveguide layer can be arranged at a position 50-150 nm away from the silicon waveguide layer in specific implementation. Because the transmission loss and the temperature transmission loss of the silicon nitride waveguide layer are lower, the passive structure with lower loss can be integrated in the silicon nitride waveguide layer, so that the loss of the optical chip is lower. For example, the silicon nitride waveguide layer may include: at least one of a silicon nitride waveguide, an edge coupler (Ec), and a polarization conversion fractor (polarization rotator splitters, PSR).
In an embodiment of the application, an electro-optic modulator may comprise: the semiconductor substrate is provided with a cavity, and the orthographic projection of the cavity on the semiconductor substrate and the orthographic projection of the signal electrode on the semiconductor substrate have overlapping areas; and/or the orthographic projection of the cavity on the semiconductor substrate and the orthographic projection of the fixed potential electrode on the semiconductor substrate have overlapping areas. By providing cavities in the semiconductor substrate corresponding to the positions of the signal electrodes and/or the fixed potential electrodes, the impedance and bandwidth of the electro-optical modulator is improved. The electro-optical modulator is provided with the thin film lithium niobate waveguide, so that the electro-optical modulator has the characteristics of high bandwidth, no refrigeration, small size, applicability to 130G and higher baud rate coherent communication and other scenes.
In the electro-optical modulator of the embodiment of the application, the capacitance between the signal electrode and the fixed potential electrode has a positive correlation with the dielectric constant of the semiconductor substrate. Since the dielectric constant of air in the cavity is lower than that of the semiconductor substrate, by providing the cavity in the semiconductor substrate corresponding to the position of the signal electrode and/or the fixed potential electrode, the dielectric constant of the semiconductor substrate can be reduced, and thus the capacitance between the signal electrode and the fixed potential electrode can be reduced. Because the impedance and the capacitance of the electro-optical modulator are in a negative correlation, the capacitance between the signal electrode and the fixed potential electrode is reduced, and the impedance of the electro-optical modulator can be improved. In addition, the dielectric constant of the semiconductor substrate is reduced, so that the loss of the semiconductor substrate to radio frequency signals is lower, and the bandwidth of the electro-optical modulator is improved. For example, the bandwidth of the electro-optic modulator in the embodiment of the application can reach more than 70GHz, and the impedance can reach more than 60 ohms. In addition, the capacitance between the signal electrode and the fixed potential electrode is reduced, so that the photoelectric speed matching is facilitated, and the modulation effect of the electro-optical modulator is better. In one possible implementation, the material of the semiconductor substrate may be quartz, which may further increase the impedance and bandwidth of the electro-optic modulator due to its low dielectric constant, which may be around 3.8. Of course, other materials may be used for the semiconductor substrate, for example, the material of the semiconductor substrate may be silicon, which is not limited herein.
In particular implementations, the cavity may be disposed at a position corresponding to the signal electrode, or the cavity may be disposed at a position corresponding to the fixed potential electrode, or the cavity may be disposed at both positions corresponding to the signal electrode and the fixed potential electrode, and the position of the cavity is not limited herein as long as the orthographic projection of the cavity on the semiconductor substrate and the orthographic projection of the signal electrode (or the fixed potential electrode) on the semiconductor substrate have overlapping regions. For example, the width of the cavity may be between 10 μm and 100 μm, and the size of the cavity may be set according to the sizes of the signal electrode and the fixed potential electrode, which is not limited herein. The shape of the cavity may be ellipsoidal, spherical, or the like.
In particular embodiments, support posts may be provided within the cavity that act to support the electro-optic modulator.
In one possible implementation, a thin film lithium niobate waveguide may include: the device comprises an input waveguide, a beam splitter connected with the input waveguide, waveguide modulation arms arranged on each branch of the beam splitter, beam combiners connected with the waveguide modulation arms, and output waveguides connected with the beam combiners, wherein two sides of each waveguide modulation arm are respectively provided with a signal electrode and a fixed potential electrode. Wherein the splitter may split the input waveguide into at least two branches, the waveguide modulation arms of each branch may be used to modulate the signal, e.g. the number of waveguide modulation arms may be two, and the two waveguide modulation arms may be symmetrically arranged. The combiner may combine the signals of the waveguide modulation arms. In the implementation, an optical signal is input from an input waveguide, the optical signal is split into at least two beams by a beam splitter, the beams split by the beam splitter enter waveguide modulation arms respectively, and a signal electrode and a fixed potential electrode load the modulation signal on the waveguide modulation arms so as to change the effective refractive index of the waveguide modulation arms, thereby changing the phase difference between the optical signals transmitted in each waveguide modulation arm and realizing the modulation of the optical signals.
In one possible implementation, the fixed potential electrodes in the electro-optical modulator are electrically connected to form the balun structure B, so that the fixed potential electrodes can be integrated into one fixed potential electrode, the form of the electro-optical modulator is simplified from double differential driving to single differential driving (DC Coupled open drain), the size of the electro-optical modulator is smaller, and the working condition of pull-up (push pull) can be met simultaneously. In particular implementations, the electro-optic modulator may further include: the driver comprises a signal input end and a signal input end, the driver can amplify signals of the signal input end and respectively output the amplified signals to the signal electrode and the fixed potential electrode, the signal electrode and the fixed potential electrode are respectively and electrically connected with the power end, a first resistor (or a second resistor) is further arranged between the fixed potential electrode and the power end, and a third resistor is arranged between the signal electrode and the power end.
In the manufacturing process of the optical chip in the embodiment of the application, a silicon nitride material can be adopted to grow in a low-pressure chemical vapor deposition (Pressure Chemical Vapor Deposition, LPCVD) mode, high-temperature annealing is carried out, and a waveguide structure in a silicon nitride waveguide layer is obtained through an etching process. Then, a thin film lithium niobate waveguide, a signal electrode, a fixed potential electrode and other structures are formed on the silicon nitride waveguide layer, and then a cavity is formed in the semiconductor substrate by adopting an etching process. In a specific implementation, the connection of the signal electrode (or fixed potential electrode) to other components may be achieved by multiple layers of metal.
In one possible implementation, the signal electrode may comprise a transparent conductive oxide (transparemt conducting oxides, TCO) material and the fixed potential electrode may comprise a Transparent Conductive Oxide (TCO) material. The transparent conductive oxide material has the characteristics of high conductivity, low loss and the like, and can improve the modulation efficiency of the electro-optical modulator and reduce the size of an optical chip. The signal electrode and the fixed potential electrode may be made of other conductive materials, for example, metal gold (Au), and the materials of the signal electrode and the fixed potential electrode are not limited. In particular implementations, the electro-optic modulator may further include: the first connection electrode electrically connected to the signal electrode and the second connection electrode electrically connected to the fixed potential electrode may be made of Transparent Conductive Oxide (TCO), however, other conductive materials, such as gold (Au), may be used for the first connection electrode and the second connection electrode, which is not limited herein.
In some embodiments of the present application, the optical chip of the present application may further include: an optical transmission structure, which may include: the first transmission part is positioned in the silicon waveguide layer, the second transmission part is positioned in the silicon nitride waveguide layer, and the third transmission part is arranged on the same layer as the lithium niobate waveguide layer, the first transmission part is in optical signal connection with the second transmission part, and the second transmission part is in optical signal connection with the third transmission part. In this way, optical signal transmission between the waveguide structure in the silicon waveguide layer and the thin film lithium niobate waveguide can be achieved.
In the embodiment of the application, structures with different functions can be integrated in the same optical chip, so that single-chip hybrid integration is realized. In specific implementation, the optical chip in the embodiment of the present application is not limited to include an electro-optical modulator and a photodetector, and may further include: at least one of a laser, a semiconductor optical amplifier (semiconductor optical amplifier, SOA). The number and positions of the functional devices can be set according to actual needs, for example, the optical chip may include: an electro-optic modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: a laser, an electro-optic modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: a laser, a semiconductor optical amplifier, an electro-optical modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: photodetector, laser, electro-optic modulator, semiconductor optical amplifier, photodetector.
In a second aspect, an embodiment of the present application further provides an optical module, where the optical module may include: any one of the optical chips and the shell, wherein the shell wraps the optical chip. The optical chip of the embodiment of the application has higher integration level. Therefore, the optical chip is applied to the optical module, and the size, the cost and the power consumption of the optical module can be reduced.
In a third aspect, an embodiment of the present application further provides a communication device, which may include: any one of the optical modules and a power module, wherein the power module is used for supplying power to the optical module; alternatively, the communication device may include: any one of the optical chips and a shell, wherein the shell wraps the optical chip. The optical chip of the embodiment of the application has higher integration level. Therefore, the optical chip is applied to the optical module or the communication equipment, and the size, the cost and the power consumption of the optical module or the communication equipment can be reduced.
Drawings
Fig. 1 is a schematic plan view of an optical chip according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view taken at the dashed line L in FIG. 1;
FIG. 3 is a schematic plan view of an electro-optic modulator according to an embodiment of the present application;
FIG. 4 is a schematic diagram of another planar structure of an electro-optic modulator according to an embodiment of the present application;
FIG. 5 is a schematic diagram showing a partial enlargement of an optical chip according to an embodiment of the present application;
fig. 6 is a schematic diagram of another structure of an optical chip according to an embodiment of the application.
Reference numerals:
10-a semiconductor substrate; 11-a silicon waveguide layer; a 12-silicon nitride waveguide layer; 13-an electro-optic modulator; 131-a thin film lithium niobate waveguide; 132-signal electrodes; 133-fixed potential electrodes; 14-a photodetector; 141-germanium intrinsic structure; 142-P type doped region; a 143-N type doped region; 15-an insulating medium layer; a 16-drive; 171-a first connection electrode; 172-a second connection electrode; 18-an optical transmission structure; 181-a first transmission section; 182-a second transfer section; 183-a third transfer section; 201-an input waveguide; 202-a beam splitter; 203-a waveguide modulation arm; 204-a beam combiner; 205-output waveguides; q-cavity; m, n-signal input terminals; b-balun structure; p-support columns.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings.
It should be noted that the same reference numerals in the drawings of the present application denote the same or similar structures, and thus a repetitive description thereof will be omitted. The words expressing the positions and directions described in the present application are described by taking the drawings as an example, but can be changed according to the needs, and all the changes are included in the protection scope of the present application. The drawings of the present application are merely schematic representations of relative positional relationships and are not intended to represent true proportions.
The embodiment of the application provides an optical chip, an optical module and communication equipment. The optical chip may be applied to various types of communication devices, for example, a telecommunications room, a data center, a router, a switch, a server, etc., and of course, may be applied to other types of communication devices, which are not limited herein.
Fig. 1 is a schematic plan view of an optical chip according to an embodiment of the present application, and fig. 2 is a schematic cross-sectional view of a broken line L in fig. 1, where, as shown in fig. 1 and fig. 2, the optical chip according to an embodiment of the present application may include: a semiconductor substrate 10, a silicon waveguide layer 11, a silicon nitride waveguide layer 12, an electro-optic modulator 13, and a photodetector 14, which are located over the semiconductor substrate 10. The photodetector 14 may include: the germanium intrinsic structure 141, and the P-type doped region 142 and the N-type doped region 143 located at both sides of the germanium intrinsic structure 141, the P-type doped region 142 and the N-type doped region 143 are integrated in the silicon waveguide layer 11. The silicon nitride waveguide layer 12 is located on the side of the silicon waveguide layer 11 facing away from the semiconductor substrate 10, and the electro-optical modulator 13 is located on the side of the silicon nitride waveguide layer 12 facing away from the semiconductor substrate 10.
The optical chip provided by the embodiment of the application can integrate various materials and realize integration of various high-performance passive structures by arranging the silicon waveguide layer, the silicon nitride waveguide layer, the electro-optic modulator and the photoelectric detector. In addition, the photoelectric detector can be integrated with the silicon waveguide layer, so that the integration level of the optical chip is further improved. Therefore, the optical chip in the embodiment of the application has higher integration level. Furthermore, the optical chip is applied to the optical module, so that the size, cost and power consumption of the optical module can be reduced.
In one possible implementation manner, the optical chip in the embodiment of the application can integrate a coherent transmitter and a receiver to realize a transceiver integrated arrangement. Therefore, the optical chip in the embodiment of the application has the advantages of integration of transceiver, high bandwidth, no refrigeration, small-size non-airtight package, high integration level and the like.
In the embodiment, as shown in fig. 2, an insulating dielectric layer 15 is disposed between the semiconductor substrate 10 and the silicon waveguide layer 11, an insulating dielectric layer 15 is disposed between the silicon waveguide layer 11 and the silicon nitride waveguide layer 12, and an insulating dielectric layer 15 is disposed between the silicon nitride waveguide layer 12 and the electro-optical modulator 13. That is, in the optical chip according to the embodiment of the present application, the insulating medium layer 15 is disposed between two adjacent conductive film layers, so as to insulate different conductive components. Alternatively, the material of the insulating dielectric layer 15 may include silicon dioxide, and of course, other materials may be used for the insulating dielectric layer 15, which is not limited herein.
In an embodiment of the present application, the silicon waveguide layer 11 may include: of course, other components may be disposed in the silicon waveguide layer 11, which is not limited herein.
In one possible implementation, as shown in fig. 2, the silicon waveguide layer 11 is provided with a recess on the side facing away from the semiconductor substrate 10, the germanium intrinsic structure 141 being located within the recess, the P-type doped region 142 and the N-type doped region 143 being located on both sides of the recess in the silicon waveguide layer 11. The germanium intrinsic structure 141 may form a P-type-intrinsic-N-type junction with P-type doped regions 142, 143 on both sides to realize the function of a germanium photodiode (Ge PD). In the actual process, P-type ions may be doped in a certain region of the silicon waveguide layer 11 to form a P-type doped region 142, N-type ions may be doped in another region of the silicon waveguide layer 11 to form an N-type doped region 143, then a groove may be formed between the P-type doped region 142 and the N-type doped region 143, and a germanium intrinsic structure 141 may be formed in the groove by epitaxial growth, so that the germanium intrinsic structure 141, the P-type doped region 142 and the N-type doped region 143 are integrated in the silicon waveguide layer 11, and integration of the photodetector 14 and the silicon waveguide layer 11 is achieved.
With continued reference to fig. 2, in an embodiment of the present application, the silicon nitride waveguide layer 12 is located on a side of the silicon waveguide layer 11 facing away from the semiconductor substrate 10, and in a specific implementation, the silicon nitride waveguide layer 12 may be disposed at a distance of 50nm to 150nm from the silicon waveguide layer. Since the transmission loss and the temperature transmission loss of the silicon nitride waveguide layer 12 are both low, a passive structure with low loss can be integrated in the silicon nitride waveguide layer 12, so that the loss of the optical chip is low. For example, the silicon nitride waveguide layer 12 may include: at least one of a silicon nitride waveguide, an edge coupler (Ec), and a polarization conversion fractor (polarization rotator splitters, PSR).
In an embodiment of the present application, as shown in FIG. 2, the electro-optic modulator 13 may comprise: the thin film lithium niobate waveguide 131, the signal electrode 132 and the fixed potential electrode 133, the semiconductor substrate 10 is provided with a cavity Q, and the orthographic projection of the cavity Q on the semiconductor substrate 10 and the orthographic projection of the signal electrode 132 on the semiconductor substrate 10 have overlapping areas; and/or, the orthographic projection of the cavity Q on the semiconductor substrate 10 and the orthographic projection of the fixed potential electrode 133 on the semiconductor substrate 10 have overlapping areas. By providing cavities in the semiconductor substrate corresponding to the positions of the signal electrodes and/or the fixed potential electrodes, the impedance and bandwidth of the electro-optical modulator is improved. The electro-optical modulator is provided with the thin film lithium niobate waveguide, so that the electro-optical modulator has the characteristics of high bandwidth, no refrigeration, small size, applicability to 130G and higher baud rate coherent communication and other scenes.
In the electro-optical modulator of the embodiment of the present application, the capacitance between the signal electrode 132 and the fixed potential electrode 133 has a positive correlation with the dielectric constant of the semiconductor substrate 10. Since the dielectric constant of air in the cavity Q is lower than that of the semiconductor substrate 10, by providing the cavity Q corresponding to the position of the signal electrode 132 and/or the fixed potential electrode 133 in the semiconductor substrate 10, the dielectric constant of the semiconductor substrate 10 can be reduced, and thus the capacitance between the signal electrode 132 and the fixed potential electrode 133 can be reduced. Since the impedance of the electro-optical modulator 13 is inversely related to the capacitance, the capacitance between the signal electrode 132 and the fixed potential electrode 133 is reduced, and the impedance of the electro-optical modulator 13 can be raised. In addition, the dielectric constant of the semiconductor substrate 10 is reduced, so that the loss of the semiconductor substrate 10 to radio frequency signals can be reduced, and the bandwidth of the electro-optical modulator is improved. For example, the bandwidth of the electro-optic modulator 13 in the embodiments of the present application may be up to 70GHz or more and the impedance may be up to 60ohm or more. In addition, the capacitance between the signal electrode 132 and the fixed potential electrode 133 is reduced, which is more favorable for the matching of the photoelectric speed, so that the modulation effect of the electro-optical modulator 13 is better. In one possible implementation, the material of the semiconductor substrate 10 may be quartz, which, due to its low dielectric constant, may further increase the impedance and bandwidth of the electro-optic modulator 13 by about 3.8. Of course, other materials may be used for the semiconductor substrate 10, for example, the material of the semiconductor substrate 10 may be silicon, and the material of the semiconductor substrate 10 is not limited herein.
In particular implementation, the cavity Q may be disposed at a position corresponding to the signal electrode 132, or the cavity Q may be disposed at a position corresponding to the fixed potential electrode 133, or the cavity Q may be disposed at both positions corresponding to the signal electrode 132 and the fixed potential electrode 133, and the position of the cavity Q is not limited herein as long as the orthographic projection of the cavity Q on the semiconductor substrate 10 and the orthographic projection of the signal electrode 132 (or the fixed potential electrode 133) on the semiconductor substrate 10 have overlapping regions. For example, the width of the cavity Q may be between 10 μm and 100 μm, and the size of the cavity Q may be set according to the sizes of the signal electrode 132 and the fixed potential electrode 133, which is not limited herein. The shape of the cavity Q may be ellipsoidal, spherical, or the like.
Fig. 3 is a schematic plan view of an electro-optical modulator according to an embodiment of the present application, and as shown in fig. 3, a thin film lithium niobate waveguide 131 may include: the input waveguide 201, the beam splitter 202 connected with the input waveguide 201, the waveguide modulation arms 203 arranged on each branch of the beam splitter 202, the beam combiner 204 connected with each waveguide modulation arm 203, and the output waveguide 205 connected with the beam combiner 204, wherein both sides of each waveguide modulation arm 203 are respectively provided with a signal electrode 132 and a fixed potential electrode 133. Wherein the splitter 202 may split the input waveguide 201 into at least two branches, the waveguide modulation arms 203 of each branch may be used to modulate signals, for example, the number of waveguide modulation arms 203 may be two, and the two waveguide modulation arms 203 may be symmetrically arranged. The combiner 204 may combine the signals of the waveguide modulation arms 203. In a specific implementation, an optical signal is input from the input waveguide 201, the optical signal is split into at least two beams by the beam splitter 202, the beams split by the beam splitter 202 enter the waveguide modulation arms 203 respectively, and the signal electrode 132 and the fixed potential electrode 133 load the modulated signals onto the waveguide modulation arms 203 to change the effective refractive index of the waveguide modulation arms 203, thereby changing the phase difference between the optical signals transmitted in each waveguide modulation arm 203 to realize modulation of the optical signals.
Fig. 4 is a schematic plan view of another plane structure of an electro-optical modulator according to an embodiment of the present application, as shown in fig. 4, each fixed potential electrode 133 in the electro-optical modulator is electrically connected and arranged to form a balun structure B, so that each fixed potential electrode 133 can be integrated into one fixed potential electrode 133, the form of the electro-optical modulator is simplified from dual differential driving to single differential driving (DC Coupled open drain), the size of the electro-optical modulator is smaller, and the working condition of pull-up (push-pull) can be satisfied at the same time. In particular implementations, the electro-optic modulator may further include: the driver 16 and the power supply terminal Vdd, the driver 16 includes a signal input terminal m and a signal input terminal n, the driver 16 can amplify signals of the signal input terminal m and the signal input terminal n and output the amplified signals to the signal electrode 132 and the fixed potential electrode 133, the signal electrode 132 and the fixed potential electrode 133 are electrically connected with the power supply terminal Vdd, a first resistor R1 (or a second resistor R2) is further disposed between the fixed potential electrode 133 and the power supply terminal Vdd, and a third resistor R3 is disposed between the signal electrode 132 and the power supply terminal Vdd.
Fig. 5 is an enlarged partial schematic view of an optical chip according to an embodiment of the present application, as shown in fig. 5, a support column P may be disposed in the cavity Q, and the support column P may serve to support the electro-optical modulator 13.
In the manufacturing process of the optical chip in the embodiment of the application, a silicon nitride material can be adopted to grow in a low-pressure chemical vapor deposition (Pressure Chemical Vapor Deposition, LPCVD) mode, high-temperature annealing is carried out, and a waveguide structure in a silicon nitride waveguide layer is obtained through an etching process. Then, a thin film lithium niobate waveguide, a signal electrode, a fixed potential electrode and other structures are formed on the silicon nitride waveguide layer, and then a cavity is formed in the semiconductor substrate by adopting an etching process. In a specific implementation, the connection of the signal electrode (or fixed potential electrode) to other components may be achieved by multiple layers of metal.
Fig. 6 is a schematic diagram of another structure of an optical chip according to an embodiment of the present application, as shown in fig. 6, the signal electrode 132 may include a transparent conductive oxide (transparemt conducting oxides, TCO) material, and the fixed potential electrode 133 may include a Transparent Conductive Oxide (TCO) material. The transparent conductive oxide material has the characteristics of high conductivity, low loss and the like, and can improve the modulation efficiency of the electro-optical modulator and reduce the size of an optical chip. The signal electrode 132 and the fixed potential electrode 133 may be made of other conductive materials, for example, metal gold (Au), and the materials of the signal electrode 132 and the fixed potential electrode 133 are not limited. In particular implementations, the electro-optic modulator may further include: the first connection electrode 171 electrically connected to the signal electrode 132, and the second connection electrode 172 electrically connected to the fixed potential electrode 133 may be made of Transparent Conductive Oxide (TCO) material, however, other conductive materials such as gold (Au) may be used for the first connection electrode 171 and the second connection electrode 172, and the present application is not limited thereto.
In some embodiments of the present application, as shown in fig. 2, the optical chip in the present application may further include: the light transmitting structure 18, the light transmitting structure 18 may include: the first transmission part 181 located in the silicon waveguide layer 11, the second transmission part 182 located in the silicon nitride waveguide 12, and the third transmission part 183 provided in the same layer as the thin film lithium niobate waveguide 131, the first transmission part 181 being optically connected to the second transmission part 182, the second transmission part 182 being optically connected to the third transmission part 183. In this way, optical signal transmission between the waveguide structure in the silicon waveguide layer 11 and the thin film lithium niobate waveguide 131 can be achieved.
In the embodiment of the application, structures with different functions can be integrated in the same optical chip, so that single-chip hybrid integration is realized. In specific implementation, the optical chip in the embodiment of the present application is not limited to include an electro-optical modulator and a photodetector, and may further include: at least one of a laser, a semiconductor optical amplifier (semiconductor optical amplifier, SOA). The number and positions of the functional devices can be set according to actual needs, for example, the optical chip may include: an electro-optic modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: a laser, an electro-optic modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: a laser, a semiconductor optical amplifier, an electro-optical modulator, a semiconductor optical amplifier, and a photodetector; alternatively, the optical chip may include: photodetector, laser, electro-optic modulator, semiconductor optical amplifier, photodetector.
Based on the same technical concept, the embodiment of the application also provides an optical module, which may include: any one of the optical chips and the shell, wherein the shell wraps the optical chip. The optical chip of the embodiment of the application has higher integration level. Therefore, the optical chip is applied to the optical module, and the size, the cost and the power consumption of the optical module can be reduced.
Based on the same technical concept, the embodiment of the application also provides a communication device, which may include: any one of the optical modules and a power module, wherein the power module is used for supplying power to the optical module; alternatively, the communication device may include: any one of the optical chips and a shell, wherein the shell wraps the optical chip. The optical chip of the embodiment of the application has higher integration level. Therefore, the optical chip is applied to the optical module or the communication equipment, and the size, the cost and the power consumption of the optical module or the communication equipment can be reduced.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present application without departing from the spirit or scope of the embodiments of the application. Thus, if such modifications and variations of the embodiments of the present application fall within the scope of the claims and the equivalents thereof, the present application is also intended to include such modifications and variations.
Claims (12)
1. An optical chip, comprising: a semiconductor substrate, a silicon waveguide layer, a silicon nitride waveguide layer, an electro-optic modulator and a photodetector over the semiconductor substrate;
the photodetector includes: the device comprises a germanium intrinsic structure, a P-type doped region and an N-type doped region, wherein the P-type doped region and the N-type doped region are positioned at two sides of the germanium intrinsic structure; the germanium intrinsic structure, the P-type doped region and the N-type doped region are integrated in the silicon waveguide layer;
the silicon nitride waveguide layer is positioned on one side of the silicon waveguide layer, which is away from the semiconductor substrate, and the electro-optic modulator is positioned on one side of the silicon nitride waveguide layer, which is away from the semiconductor substrate.
2. The optical chip of claim 1, wherein the silicon waveguide layer is provided with a recess on a side facing away from the semiconductor substrate, the germanium intrinsic structure being located in the recess; the P-type doped region and the N-type doped region are positioned at two sides of the groove in the silicon waveguide layer.
3. The optical chip of claim 1, wherein the silicon nitride waveguide layer comprises: at least one of a silicon nitride waveguide, an end-face coupler, and a polarization conversion splitter; the silicon waveguide layer includes: a silicon waveguide.
4. The optical chip of claim 1, wherein the electro-optic modulator comprises: a thin film lithium niobate waveguide, a signal electrode and a fixed potential electrode;
the semiconductor substrate is provided with a cavity, and the orthographic projection of the cavity on the semiconductor substrate and the orthographic projection of the signal electrode on the semiconductor substrate have an overlapping area; and/or the orthographic projection of the cavity on the semiconductor substrate and the orthographic projection of the fixed potential electrode on the semiconductor substrate have overlapping areas.
5. The optical chip of claim 4, wherein support posts are disposed within the cavity.
6. The optical chip of claim 4, wherein the thin film lithium niobate waveguide comprises: an input waveguide, a beam splitter connected to the input waveguide, a waveguide modulation arm provided at each branch of the beam splitter, a beam combiner connected to each waveguide modulation arm, and an output waveguide connected to the beam combiner;
two sides of each waveguide modulation arm are respectively provided with one signal electrode and one fixed potential electrode;
and each fixed potential electrode in the electro-optical modulator is electrically connected and arranged.
7. The optical chip of claim 4, wherein the signal electrode comprises a transparent conductive oxide material and the fixed potential electrode comprises a transparent conductive oxide material.
8. The optical chip of any one of claims 1 to 7, further comprising: an optical transmission structure;
the light transmission structure includes: the first transmission part is positioned in the silicon waveguide layer, the second transmission part is positioned in the silicon nitride waveguide layer, and the third transmission part is arranged on the same layer as the lithium niobate waveguide layer, the first transmission part is in optical signal connection with the second transmission part, and the second transmission part is in optical signal connection with the third transmission part.
9. The optical chip of any one of claims 1-8, wherein an insulating dielectric layer is disposed between the semiconductor substrate and the silicon waveguide layer, an insulating dielectric layer is disposed between the silicon waveguide layer and the silicon nitride waveguide layer, and an insulating dielectric layer is disposed between the silicon nitride waveguide layer and the electro-optic modulator.
10. The optical chip of any one of claims 1 to 9, further comprising: at least one of a laser and a semiconductor optical amplifier.
11. An optical module, comprising: the optical chip and the case according to any one of claims 1 to 10, wherein the case encloses the optical chip.
12. A communication device, comprising: the light module of claim 11, and a power module to power the light module; alternatively, the communication device includes: the optical chip and the case according to any one of claims 1 to 10, wherein the case encloses the optical chip.
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| CN202210307693.3A CN116841060A (en) | 2022-03-25 | 2022-03-25 | Optical chip, optical module and communication equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210307693.3A CN116841060A (en) | 2022-03-25 | 2022-03-25 | Optical chip, optical module and communication equipment |
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