CN116833079A - Capacitive Micromachined Ultrasonic Transducer - Google Patents
Capacitive Micromachined Ultrasonic Transducer Download PDFInfo
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- CN116833079A CN116833079A CN202310798722.5A CN202310798722A CN116833079A CN 116833079 A CN116833079 A CN 116833079A CN 202310798722 A CN202310798722 A CN 202310798722A CN 116833079 A CN116833079 A CN 116833079A
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
Abstract
The application provides a capacitive micromachined ultrasonic transducer, comprising: a diaphragm layer; an insulating layer disposed opposite to the diaphragm layer; the bonding piece is positioned between the vibrating diaphragm layer and the insulating layer, the bonding piece is a metal bonding piece or an adhesive layer, and is used for connecting the vibrating diaphragm layer and the insulating layer and forming a plurality of closed cavities between the vibrating diaphragm layer and the insulating layer. The formation of the metal bonding piece or the bonding adhesive layer has lower requirement on the surface roughness of the bonding film layer, which reduces the difficulty of forming the bonding piece, thereby being beneficial to reducing the preparation cost of the capacitive micromachined ultrasonic transducer; meanwhile, the formation of the metal bonding piece or the adhesive layer enables the vibrating diaphragm layer and the insulating layer to be bonded together through chemical bonds, and the connection capability of the vibrating diaphragm layer and the insulating layer is improved, so that the structural stability of the capacitive micromachined ultrasonic transducer is improved.
Description
Technical Field
The application relates to the technical field of ultrasonic transducers, in particular to a capacitive micromachined ultrasonic transducer.
Background
The ultrasonic transducer is an energy conversion device for converting alternating electric signals into acoustic signals in an ultrasonic frequency range or converting acoustic signals in an external sound field into electric signals, and is a core device in ultrasonic technology, and the performance of the ultrasonic transducer directly influences the application effect and the application range of the ultrasonic technology. The capacitive micromachined ultrasonic transducer (Capacitive Micromachined Ultrasonic Transducer, CMUT) manufactured by the surface micromachining process is rapidly developed, and is widely applied to the fields of ultrasonic imaging, fingerprint identification, directional field generation and the like. The capacitive micromachined ultrasonic transducer prepared by the surface micromachining process has a size of only tens of millimeters, which enables the capacitive micromachined ultrasonic transducer to have a higher center frequency and thus higher resolution.
At present, a wafer bonding process is mostly adopted to prepare the capacitive micromachined ultrasonic transducer. However, the wafer bonding process has high preparation cost, which is not beneficial to the industrial production of the capacitive micromachined ultrasonic transducer.
Disclosure of Invention
The application aims to reduce the manufacturing cost of the capacitive micromachined ultrasonic transducer at least to some extent.
The application provides a capacitive micromachined ultrasonic transducer, comprising: a diaphragm layer; an insulating layer disposed opposite to the diaphragm layer; the bonding piece is positioned between the vibrating diaphragm layer and the insulating layer, the bonding piece is a metal bonding piece or an adhesive layer, and the bonding piece is used for connecting the vibrating diaphragm layer and the insulating layer and forming a plurality of closed cavities between the vibrating diaphragm layer and the insulating layer.
In the capacitive micromachined ultrasonic transducer, the formation of the metal bonding piece or the adhesive layer has lower requirement on the surface roughness of the bonding film layer, so that the difficulty in forming the bonding piece is reduced, and the preparation cost of the capacitive micromachined ultrasonic transducer is reduced; meanwhile, the formation of the metal bonding piece or the adhesive layer enables the vibrating diaphragm layer and the insulating layer to be bonded together through chemical bonds, and the connection capability of the vibrating diaphragm layer and the insulating layer is improved, so that the structural stability of the capacitive micromachined ultrasonic transducer is improved.
According to an embodiment of the application, the insulating layer is provided with a plurality of grooves, the metal bonding piece is a metal bonding layer, and the metal bonding layer is positioned on one side surface of the insulating layer with the grooves so that the grooves form the closed cavity.
According to the embodiment of the application, the closed cavity comprises a first cavity surface and a second cavity surface which are oppositely arranged, the first cavity surface is a partial surface of one side of the vibrating diaphragm layer facing the insulating layer, and the second cavity surface is the bottom of the groove. Thereby, it is advantageous to reduce the parasitic capacitance of the capacitive micromachined ultrasonic transducer.
According to an embodiment of the present application, the thickness of the metal bonding layer is 0.1 μm to 10 μm. Therefore, the vibrating diaphragm layer and the insulating layer have larger connection strength, and the miniaturization of the capacitive micromachined ultrasonic transducer is facilitated.
According to the embodiment of the application, the insulating layer is provided with a flat surface, the metal bonding piece is a metal bonding body, the metal bonding body is provided with a plurality of through holes which penetrate through, and the vibrating diaphragm layer and the insulating layer enable the through holes to form the closed cavity.
According to an embodiment of the application, the insulating layer is provided with a plurality of grooves, and the adhesive layer is positioned on one side surface of the insulating layer with the grooves so that the grooves form the closed cavity.
According to an embodiment of the present application, the material of the adhesive layer is a thermoplastic resin, and the melting point of the thermoplastic resin is 150-350 ℃.
According to the embodiment of the application, the insulating layer is provided with a plane area and a groove area which is arranged adjacent to the plane area, the groove is positioned in the groove area, and the orthographic projection of the bonding adhesive layer on the insulating layer is positioned in the plane area.
According to an embodiment of the present application, the metal bond comprises at least one of copper, tin, gold, silver, indium.
According to an embodiment of the application, the capacitive micromachined ultrasonic transducer further comprises: the first electrode layer is positioned on the surface of one side of the vibrating diaphragm layer, which is away from the insulating layer; the second electrode layer is positioned on the surface of one side of the insulating layer, which is away from the vibrating diaphragm layer; the first electrode layer and/or the second electrode layer is/are a patterned electrode layer, the patterned electrode layer comprises a plurality of sub-electrode blocks, and the sub-electrode blocks are arranged corresponding to the cavity; an insulating substrate on a side of the second electrode layer facing away from the insulating layer.
According to an embodiment of the present application, the first electrode layer is the patterned electrode layer; the first electrode layer further comprises an insulating flat layer, the insulating flat layer is filled between adjacent sub-electrode blocks, and the thickness of the insulating flat layer is the same as that of the sub-electrode blocks.
According to an embodiment of the application, the capacitive micromachined ultrasonic transducer further comprises a buffer layer located between the second electrode layer and the insulating substrate, the buffer layer being used for bonding the second electrode layer and the insulating substrate.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIGS. 1-15 are schematic structural views of a capacitive micromachined ultrasonic transducer according to embodiment 1 of the present application during the fabrication process;
FIGS. 16-18 are schematic structural views of another capacitive micromachined ultrasonic transducer according to embodiment 1 of the present application during fabrication;
FIG. 19 is a schematic diagram of a capacitive micromachined ultrasonic transducer according to embodiment 1 of the present application;
FIGS. 20-22 are schematic structural views of a capacitive micromachined ultrasonic transducer according to embodiment 2 of the present application during fabrication;
FIG. 23 is a schematic structural view of another capacitive micromachined ultrasonic transducer according to embodiment 1 of the present application;
FIG. 24 is a schematic structural view of a capacitive micromachined ultrasonic transducer according to embodiment 1 of the present application;
reference numerals illustrate:
1-a temporary substrate; 2-a temporary bonding adhesive layer; 3-a first electrode layer; 31-a first initial electrode layer; 32-a first initial photoresist layer; 33-a first photoresist layer; 34-sub-electrode blocks; 35-an insulating planarization layer; 4-a diaphragm layer; 51-a first metal layer; 52-a first metal body; 53-first sub-vias; 6-insulating substrate; 7-a second electrode layer; 8-a buffer layer; 9-an insulating layer; 91-an initial insulating layer; 92-a second initial photoresist layer; 93-a second photoresist layer; 94-groove; 101-a second metal layer; 102-a second metal body; 103-a second sub-via; a 111-metal bonding layer; 112-metal bond; 113-through holes.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present application and should not be construed as limiting the application.
As described in the background art, the wafer bonding process has higher preparation cost and is not beneficial to the industrial production of the capacitive micromachined ultrasonic transducer.
Specifically, the method for preparing the capacitive micromachined ultrasonic transducer by using the wafer bonding process comprises the following steps: oxidizing the front side and the back side of the monocrystalline silicon piece to obtain a silicon oxide layer; etching the silicon oxide layer on the front side of the monocrystalline silicon piece to obtain a plurality of grooves; deep cleaning is carried out on the monocrystalline silicon piece and the SOI piece, so that the high cleanliness of the surface is ensured; bonding a monocrystalline silicon wafer and an SOI wafer together to enable the grooves to form a closed cavity, and then annealing at a high temperature of more than 1000 ℃; thinning a silicon layer far away from a monocrystalline silicon wafer in an SOI wafer by adopting a chemical mechanical polishing process, completely removing the exposed residual silicon layer in the SOI wafer by adopting a wet etching solution of tetramethylammonium hydroxide (TMAH), and then adopting a wet etching solution of BOE (NH) 4 F, HF=6:1) removing the buried oxide layer and the silicon oxide layer on the back surface of the monocrystalline silicon piece in the SOI piece, wherein the silicon layer exposed by the SOI piece is used as a vibrating diaphragm layer; and forming a metal electrode on the surface of the vibrating diaphragm layer and the surface of the silicon layer of the monocrystalline silicon piece.
The preparation cost of the wafer bonding process is mainly as follows:
(1) Si and SiO 2 Performing anodic bonding, wherein the requirement on the surface roughness of the bonding film layer is higher, namely the requirement on raw materials is higher;
(2) The bonding process needs high-temperature (more than 1000 ℃) annealing, so that the preparation cost is increased;
(3) The raw material monocrystalline silicon wafer and SOI wafer are expensive;
(4) The process flow is relatively complex.
In addition, in the preparation of the capacitive micromachined ultrasonic transducer by the wafer bonding process, si and SiO are described 2 Bonded together with van der waals forces, the connection capability is also to be improved.
Based on the above, the application provides a preparation method of a capacitive micromachined ultrasonic transducer, which comprises the following steps:
forming a vibrating diaphragm layer;
forming an insulating layer, wherein the insulating layer is arranged opposite to the vibrating diaphragm layer;
and forming a bonding piece, wherein the bonding piece is positioned between the vibrating diaphragm layer and the insulating layer, the bonding piece is a metal bonding piece or an adhesive layer, and the bonding piece is used for connecting the vibrating diaphragm layer and the insulating layer and forming a plurality of closed cavities between the vibrating diaphragm layer and the insulating layer.
According to the application, the bonding piece is formed between the vibrating diaphragm layer and the insulating layer to connect the vibrating diaphragm layer and the insulating layer, the requirement on the surface roughness of the bonding film layer is low due to the formation of the metal bonding piece or the bonding adhesive layer, so that the difficulty in forming the bonding piece is reduced, and the preparation cost of the capacitive micromachined ultrasonic transducer is reduced; meanwhile, the formation of the metal bonding piece or the adhesive layer enables the vibrating diaphragm layer and the insulating layer to be bonded together through chemical bonds, and the connection capability of the vibrating diaphragm layer and the insulating layer is improved, so that the structural stability of the capacitive micromachined ultrasonic transducer is improved.
Example 1
In this embodiment, the insulating layer has a plurality of grooves, and the metal bonding member is a metal bonding layer, and the metal bonding layer makes the grooves form the closed cavity.
Specifically, the step of forming the metal bonding layer in this embodiment includes: forming a first metal layer, wherein the first metal layer is positioned on one side surface of the vibrating diaphragm layer, and the material of the first metal layer comprises at least one of copper, tin, gold, silver and the like; forming a second metal layer, wherein the second metal layer is positioned on one side surface of the insulating layer with the groove, and the material of the second metal layer comprises at least one of copper, tin, gold, silver and indium; and arranging the first metal layer and the second metal layer oppositely and performing thermocompression bonding, wherein the first metal layer and the second metal layer form the metal bonding layer. The temperature of thermocompression bonding is determined by the melting points of the first metal layer and the second metal layer. Preferably, the melting point of the first metal layer and the second metal layer is less than 1000 ℃, the first metal layer and the second metal layer can respectively and independently contain low-melting-point materials such as tin, indium and the like, and at the moment, the temperature of thermocompression bonding is low, so that the preparation cost of the capacitive micromachined ultrasonic transducer is further reduced. The material of the first metal layer and the material of the second metal layer may be the same or different.
Preferably, the insulating layer has a planar area and a groove area adjacent to the planar area, the groove is located in the groove area, the orthographic projections of the first metal layer and the second metal layer on the insulating layer are both located in the planar area, that is, the first metal layer and the second metal layer are patterned metal layers, the groove is not provided with the second metal layer, and the area, opposite to the groove, of the vibrating diaphragm layer is not provided with the first metal layer, which is beneficial to reducing the parasitic capacitance of the capacitive micromachined ultrasonic transducer.
The method for manufacturing the capacitive micromachined ultrasonic transducer according to the embodiment is described in detail with reference to fig. 1 to 15.
Referring to fig. 1, a temporary substrate 1 is provided, and a temporary bonding adhesive layer 2 is formed on one side surface of the temporary substrate 1. Specifically, the temporary substrate 1 includes, but is not limited to, a transparent substrate such as glass; the process of forming the temporary bonding adhesive layer 2 includes, but is not limited to, a coating process.
Referring to fig. 1 to 5, a first electrode layer 3 is formed on a surface of the temporary bonding adhesive layer 2 on a side facing away from the temporary substrate 1. The first electrode layer 3 is a patterned electrode layer, the patterned electrode layer includes a plurality of sub-electrode blocks 34 disposed at intervals, and an insulating flat layer 35 disposed between adjacent sub-electrode blocks 34, and the thickness of the insulating flat layer 35 is the same as that of the sub-electrode blocks 34, so that the first electrode layer 3 has a complete and flat surface for deposition of the subsequent diaphragm layer 4. The material of the insulating planarization layer 35 includes, but is not limited to, a resin material.
Specifically, the step of forming the first electrode layer 3 includes:
referring to fig. 1-4, a plurality of sub-electrode blocks 34 are formed on a surface of one side of the temporary bonding adhesive layer 2 facing away from the temporary substrate 1, and a spacing area is formed between adjacent sub-electrode blocks 34. The step of forming a number of said sub-electrode blocks 34 comprises: referring to fig. 1, a first initial electrode layer 31 is formed on the surface of the temporary bonding adhesive layer 2 facing away from the temporary substrate 1, and the process of forming the first initial electrode layer 31 includes, but is not limited to, a magnetron sputtering process, an electroplating process, a physical vapor deposition process, and a chemical vapor deposition process; with continued reference to fig. 1, an entire first initial photoresist layer 32 is formed on a surface of a side of the first initial electrode layer 31 facing away from the temporary substrate 1; referring to fig. 2, the first initial photoresist layer 32 is sequentially exposed and developed to obtain a patterned first photoresist layer 33; referring to fig. 3, the first initial electrode layer 31 is etched using the first photoresist layer 33 as a mask; referring to fig. 4, the first photoresist layer 33 is removed, resulting in a number of sub-electrode blocks 34. It should be noted that other processes may be used to prepare the sub-electrode blocks.
Referring to fig. 5, an insulating planarization layer 35 is formed at the spacer to obtain a first electrode layer 3; the process of forming the insulating planarization layer 35 includes, but is not limited to, a coating process.
Referring to fig. 6, a diaphragm layer 4 is formed on a surface of the first electrode layer 3 on a side facing away from the temporary substrate 1; specifically, the material of the diaphragm layer 4 includes, but is not limited to, si 3 N 4 At least one of Si; the process of forming the diaphragm layer 4 includes, but is not limited toNot limited to plasma chemical vapor deposition processes.
Referring to fig. 7, a patterned first metal layer 51 is formed on a surface of the diaphragm layer 4 on a side facing away from the temporary substrate 1, and the orthographic projection of the first metal layer 51 on the temporary substrate 1 is located within the orthographic projection of the insulating flat layer 35 on the temporary substrate 1, preferably, the orthographic projection of the first metal layer 51 on the temporary substrate 1 coincides with the orthographic projection of the insulating flat layer 35 on the temporary substrate 1. Specifically, the process of forming the first metal layer 51 includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, and a chemical vapor deposition process, where a mask is disposed on a surface of the diaphragm layer 4 facing away from the temporary substrate 1 during the deposition process, so as to obtain the patterned first metal layer 51 after the deposition is completed.
Referring to fig. 8, an insulating substrate 6 is provided, and a second electrode layer 7 is formed entirely on one side of the insulating substrate 6. In particular, the insulating substrate 6 includes, but is not limited to, glass, and the insulating substrate 6 is preferably glass, which is low in price compared with monocrystalline silicon wafers, and is beneficial to further reducing the manufacturing cost of the capacitive micromachined ultrasonic transducer. The process of forming the entire second electrode layer 7 includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, a chemical vapor deposition process.
Further, with continued reference to fig. 8, before the second electrode layer 7 is formed, a buffer layer 8 may be further formed on a side surface of the insulating substrate 6, where the second electrode layer 7 is formed on a side surface of the buffer layer 8 away from the insulating substrate 6, where both the second electrode layer 7 and the insulating substrate 6 have a larger adhesion with the buffer layer 8, and the buffer layer 8 can increase the connection strength between the second electrode layer 7 and the insulating substrate 6, so as to improve the structural stability of the capacitive micromachined ultrasonic transducer. When the insulating substrate 6 is glass, the material of the buffer layer 8 comprises SiO 2 、Si 3 N 4 At least one of them. The process of forming the buffer layer 8 includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, a chemical vapor deposition process, and the specific process may be selected according to the material of the buffer layer 8.
Referring to fig. 8-11, an insulating layer 9 is formed on a surface of the second electrode layer 7 on a side facing away from the insulating substrate 6, the insulating layer 9 having a plurality of grooves 94, and the grooves 94 are provided with notches facing away from the insulating substrate 6.
Specifically, the step of forming the insulating layer 9 includes: referring to fig. 8, an entire initial insulating layer 91 is formed on a side surface of the second electrode layer 7 facing away from the insulating substrate 6, and processes for forming the initial insulating layer 91 include, but are not limited to, a magnetron sputtering process, a physical vapor deposition process, a chemical vapor deposition process; with continued reference to fig. 8, an entire second initial photoresist layer 92 is formed on a side surface of the initial insulating layer 91 facing away from the insulating substrate 6; referring to fig. 9, the second initial photoresist layer 92 is sequentially exposed and developed to obtain a patterned second photoresist layer 93; referring to fig. 10, the initial insulating layer 91 is etched using the second photoresist layer 93 as a mask; referring to fig. 11, the second photoresist layer 93 is removed, resulting in an insulating layer 9 having a plurality of grooves 94.
Referring to fig. 12, a second metal layer 101 is formed on a side surface of the insulating layer 9 facing away from the insulating substrate 6, the second metal layer 101 not being formed in the recess. Specifically, the process of forming the second metal layer 101 includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, and a chemical vapor deposition process, where a mask is disposed on a surface of a side of the insulating layer 9 facing away from the insulating substrate 6 during the deposition process, so as to shield the groove, prevent the metal material from being deposited into the groove, and obtain the patterned second metal layer 101 after the deposition is completed.
Referring to fig. 13 to 14, the first metal layer 51 and the second metal layer 101 are disposed opposite to each other, and at this time, the sub-electrode block 34 of the first electrode layer 3 is disposed opposite to the groove 94, followed by thermocompression bonding, so that the first metal layer 51 and the second metal layer 101 form a metal bonding layer 111.
Referring to fig. 15, after the metal bonding layer 111 is formed, debonding is performed to remove the temporary bonding glue layer 2 and the temporary substrate 1, resulting in a capacitive micromachined ultrasonic transducer. Compared with the chemical mechanical polishing and wet etching steps sequentially carried out in the wafer bonding process, the temporary bonding adhesive layer 2 has simple step of de-bonding, which is beneficial to further reducing the preparation cost of the capacitive micromachined ultrasonic transducer and realizing industrial production. Specifically, the method of debonding includes, but is not limited to, solution soaking and laser irradiation. When the temporary substrate 1 is a transparent substrate, the temporary substrate 1 is preferably detached by laser, and the laser irradiates the temporary bonding adhesive layer 2 through the transparent substrate, so that the temporary substrate 1 is separated due to the high energy of the laser and the high detaching efficiency is achieved.
In summary, the process flow of the capacitive micromachined ultrasonic transducer provided by the embodiment is simpler, which is beneficial to further reducing the preparation cost of the capacitive micromachined ultrasonic transducer and realizing industrial production.
As a first alternative embodiment, referring to fig. 16, the first electrode layer 3 is a film layer covering the temporary bonding adhesive layer 2 on the whole surface; referring to fig. 17, the second electrode layer 7 includes a plurality of sub-electrode blocks 34 disposed at intervals. The process of forming the first electrode layer 3 includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, a chemical vapor deposition process. The step of forming the second electrode layer 7 includes: forming a second initial electrode layer on one side of the insulating substrate 6, wherein the process of forming the second initial electrode layer includes, but is not limited to, a magnetron sputtering process, an electroplating process, a physical vapor deposition process, and a chemical vapor deposition process; forming a third initial photoresist layer on the surface of one side of the second initial electrode layer, which faces away from the insulating substrate 6; sequentially exposing and developing the third initial photoresist layer to obtain a patterned third photoresist layer; etching the second initial electrode layer by taking the third photoresist layer as a mask; and removing the third photoresist layer to obtain the second electrode layer. In this embodiment, the preparation steps of the other functional layers of the capacitive micromachined ultrasonic transducer can be referred to in the foregoing of example 1, and will not be described herein. Fig. 18 shows a schematic structural diagram of a capacitive micromachined ultrasonic transducer produced by this embodiment. Since the insulating layer 9 is formed on the second electrode layer 7, the insulating layer 9 of the present embodiment has a shape different from that of the insulating layer 9 in fig. 15.
As a second alternative embodiment, see fig. 19, the first electrode layer 3 comprises a number of sub-electrode blocks 34 arranged at intervals, and an insulating planar layer 35 located between adjacent sub-electrode blocks 34, while the second electrode layer 7 comprises a number of sub-electrode blocks 34 arranged at intervals. In this embodiment, the preparation steps of the other functional layers of the capacitive micromachined ultrasonic transducer can be referred to in the foregoing of example 1, and the preparation of the second electrode layer 7 refers to the first alternative embodiment, which is not described herein. Since the insulating layer 9 is formed on the second electrode layer 7, the shape of the insulating layer 9 in this embodiment is also different from that of the insulating layer 9 in fig. 15.
Example 2
Referring to fig. 22 to 24, this embodiment differs from embodiment 1 only in that: the insulating layer 9 has a flat surface, the metal bonding piece is a metal bonding body 112, the metal bonding body 112 is provided with a plurality of through holes 113, the vibrating membrane layer 4 and the insulating layer 9 enable the through holes 113 to form the closed cavity, so that two cavity surfaces on the vibrating membrane layer 4 and the insulating layer 9 in the cavity are free of metal materials, and parasitic capacitance of the capacitive micromachined ultrasonic transducer is reduced.
The process of forming the insulating layer in this embodiment includes, but is not limited to, a magnetron sputtering process, a physical vapor deposition process, and a chemical vapor deposition process.
The step of forming the metal bonding post in this embodiment includes:
referring to fig. 20, a first metal body 52 is formed, the first metal body 52 is located on the surface of one side of the diaphragm layer 4 away from the temporary substrate 1, the first metal body 52 is provided with a first sub-through hole 53, the material of the first metal body 52 includes but is not limited to at least one of copper, tin, gold, silver, and the thickness direction of the first metal body 52 is the same as the extending direction of the first sub-through hole 53, and the orthographic projection of the first metal body 52 on the temporary substrate 1 coincides with the orthographic projection of the insulating flat layer 35 on the temporary substrate 1;
with continued reference to fig. 20, a second metal body 102 is formed, the second metal layer 101 is located on a surface of the insulating layer 9 facing away from the insulating substrate 6, the second metal body 102 has a second sub-through hole 103, a material of the second metal body 102 includes but is not limited to at least one of copper, tin, gold, silver, and the thickness direction of the second metal body 102 is the same as the extending direction of the second sub-through hole 103, the second metal body 102 is the same as the shape of the first metal body 52, the sizes and distribution manners of the first sub-through hole 53 and the second sub-through hole 103 are the same, and the thicknesses of the second metal body 102 and the first metal body 52 may be the same or different;
referring to fig. 20, the first metal body 52 and the second metal body 102 are disposed opposite to each other and thermocompression bonded; referring to fig. 21, the first metal body 52 and the second metal body 102 form a metal bonding post, and the first sub-through hole 53 and the second sub-through hole 103 are communicated to form the through hole 113, and form a closed cavity; referring to fig. 22, after debonding, a capacitive micromachined ultrasonic transducer is obtained. Fig. 22 shows a schematic structural view of the first electrode layer 3 as a patterned electrode layer, the second electrode layer 7 as a whole electrode layer, fig. 23 shows a schematic structural view of the first electrode layer 3 as a whole electrode layer, the second electrode layer 7 as a patterned electrode layer, and fig. 24 shows a schematic structural view of the first electrode layer 3 and the second electrode layer 7 as patterned electrode layers.
Specifically, the first metal body 52 and the second metal body 102 may be deposited by using a magnetron sputtering process, a physical vapor deposition process, a chemical vapor deposition process, or the like, and a mask is disposed during the deposition process, so as to obtain the first sub-via 53 and the second sub-via 103, respectively. The thickness of the second metal body is greater than that of the second metal layer in embodiment 1, and the thickness of the first metal body and the thickness of the second metal body can be designed according to the desired cavity depth.
The preparation steps of other functional layers in the capacitive micromachined ultrasonic transducer of the present embodiment are the same as those of embodiment 1, and are not described here again.
Example 3
This embodiment differs from embodiment 1 only in that: the insulating layer is provided with a plurality of grooves, and the bonding piece is an adhesive layer. Because the adhesive layer and the metal bonding layer are both in a layered structure, the schematic structural diagram of the capacitive micromachined ultrasonic transducer prepared in this embodiment can also be seen in fig. 15, 18 and 19.
In a first embodiment, the method for manufacturing a capacitive micromachined ultrasonic transducer includes: coating adhesive on one side surface of the vibrating diaphragm layer; contacting the surface of the insulating layer with the groove with the adhesive; and curing the adhesive to obtain an adhesive layer, wherein the insulating layer is connected with the vibrating diaphragm layer. In this case, the adhesive layer is a whole film layer, and the adhesive layer may be a thermoplastic resin or a thermosetting resin.
In a second embodiment, the material of the adhesive layer is thermoplastic resin, and the adhesive layer is formed on one side surface of the diaphragm layer in advance through coating and curing; contacting the adhesive layer with the surface of the insulating layer, which is provided with the groove; and then carrying out hot-press bonding, heating to reach the melting point of the adhesive layer, and cooling to room temperature after softening or liquefying the adhesive layer to connect the insulating layer and the vibrating diaphragm layer together. According to the embodiment, the adhesive layer can be prefabricated in advance, so that the assembly time can be shortened, and the preparation efficiency of the capacitive micromachined ultrasonic transducer can be improved. Preferably, the melting point of the thermoplastic resin is 150-350 ℃, and the temperature of thermocompression bonding is low, so that the preparation cost of the capacitive micromachined ultrasonic transducer is further reduced.
In a second embodiment, the adhesive layer may be a patterned film layer, that is, the insulating layer has a planar area and a groove area disposed adjacent to the planar area, where the groove is located in the groove area, and the orthographic projections of the adhesive layer on the insulating layer are all located in the planar area. The step of forming the adhesive layer includes: forming an initial adhesive layer on one side surface of the vibrating diaphragm layer, wherein the adhesive layer belongs to photoresist; and sequentially exposing and developing the initial adhesive layer.
In a second embodiment, the adhesive layer may be a full-face film layer.
The preparation steps of other functional layers in the capacitive micromachined ultrasonic transducer of the present embodiment are the same as those of embodiment 1, and are not described here again.
Example 4
Referring to fig. 15, 18, 19, and 22-24, the present embodiment provides a capacitive micromachined ultrasonic transducer, including: a diaphragm layer 4; an insulating layer 9 disposed opposite to the diaphragm layer 4; the bonding piece is located between the vibrating diaphragm layer 4 and the insulating layer 9, the bonding piece is a metal bonding piece or an adhesive layer, and the bonding piece is used for connecting the vibrating diaphragm layer 4 and the insulating layer 9, and a plurality of closed cavities are formed between the vibrating diaphragm layer 4 and the insulating layer 9.
In the capacitive micromachined ultrasonic transducer, the formation of the metal bonding piece or the adhesive layer has lower requirement on the surface roughness of the bonding film layer, so that the difficulty in forming the bonding piece is reduced, and the preparation cost of the capacitive micromachined ultrasonic transducer is reduced; meanwhile, the diaphragm layer 4 and the insulating layer 9 are bonded together through chemical bonding by the formation of the metal bonding piece or the bonding adhesive layer, so that the connection capability of the diaphragm layer 4 and the insulating layer is improved, and the structural stability of the capacitive micromachined ultrasonic transducer is improved.
In this embodiment, the metal bond includes at least one of copper, tin, gold, silver, and indium, and the material of the metal bond determines the formation temperature thereof. Preferably, the metal bonding pieces can respectively and independently contain low-melting-point materials such as tin, indium and the like, and the forming temperature of the metal bonding pieces is low at the moment, so that the preparation cost of the capacitive micromachined ultrasonic transducer is further reduced.
In the first embodiment, referring to fig. 15, 18 and 19, the insulating layer 9 has a plurality of grooves 94, the metal bonding member is a metal bonding layer 111, and the metal bonding layer 111 is located on a surface of the insulating layer 9 on a side having the grooves 94 so that the grooves 94 form the closed cavity. Preferably, the closed cavity includes a first cavity surface and a second cavity surface that are disposed opposite to each other, the first cavity surface is a partial surface of one side of the diaphragm layer 4 facing the insulating layer 9, and the second cavity surface is a bottom of the groove 94. That is, neither the first cavity surface nor the second cavity surface of the closed cavity has a metal material, and the metal bonding layer 111 is a patterned metal layer, which is advantageous for reducing parasitic capacitance of the capacitive micromachined ultrasonic transducer.
Further, the thickness of the metal bonding layer 111 is 0.1 μm to 10 μm, such as 0.1 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm. The thickness of the metal bonding layer 111 is too large, so that the vibrating diaphragm layer 4 and the insulating layer 9 have larger connection strength, but are not beneficial to miniaturization of the capacitive micromachined ultrasonic transducer; by limiting the thickness of the metal bonding layer 111 to the above-described range, miniaturization of the capacitive micromachined ultrasonic transducer is facilitated while the diaphragm layer 4 and the insulating layer 9 are made to have a large connection strength.
In a second embodiment, referring to fig. 22-24, the insulating layer 9 has a flat surface, the metal bonding member is a metal bonding body 112, the metal bonding body 112 has a plurality of through holes penetrating therethrough, and the diaphragm layer 4 and the insulating layer 9 form the closed cavity, so that two cavity surfaces of the cavity, which are located on the diaphragm layer 4 and the insulating layer 9, are free of metal materials, which is beneficial to reducing parasitic capacitance of the capacitive micromachined ultrasonic transducer. The thickness of the metal bond 112 may be designed according to the desired cavity depth.
In a third embodiment, the insulating layer has a plurality of grooves, and the adhesive layer is located on a surface of the insulating layer, which has the grooves, so that the grooves form the closed cavity. The adhesive may be a thermoplastic resin or a thermosetting resin. Preferably, the material of the adhesive layer is thermoplastic resin, at this time, a solid adhesive layer can be prefabricated on the surface of the vibrating diaphragm layer, and after the adhesive layer contacts with the insulating layer, the adhesive layer is sequentially bonded by hot pressing and cooled, so that the insulating layer is connected with the vibrating diaphragm layer, thereby shortening the assembly time and being beneficial to improving the preparation efficiency of the capacitive micromachined ultrasonic transducer. More preferably, the melting point of the thermoplastic resin is 150-350 ℃, and the temperature of thermocompression bonding is lower at the moment, so that the preparation cost of the capacitive micromachined ultrasonic transducer is further reduced.
The bonding adhesive layer can be a patterned film layer, namely, the insulating layer is provided with a plane area and a groove area which is arranged adjacent to the plane area, the groove is positioned in the groove area, and the orthographic projection of the bonding adhesive layer on the insulating layer is positioned in the plane area. The adhesive layer can also be a film layer which covers the diaphragm layer entirely.
In this embodiment, the capacitive micromachined ultrasonic transducer further includes: a first electrode layer 3 positioned on the surface of one side of the vibrating diaphragm layer 4 away from the insulating layer 9; a second electrode layer 7 positioned on a side surface of the insulating layer 9 facing away from the diaphragm layer 4; the first electrode layer 3 and/or the second electrode layer 7 are patterned electrode layers, the patterned electrode layers comprise a plurality of sub-electrode blocks 34, and the sub-electrode blocks 34 are arranged corresponding to the cavities; an insulating substrate 6 on the side of the second electrode layer 7 facing away from the insulating layer 9.
Referring to fig. 15 and 19, when the first electrode layer 3 is a patterned electrode layer, the first electrode layer 3 further includes an insulating flat layer 35, the insulating flat layer 35 is filled between adjacent sub-electrode blocks 34, and the thickness of the insulating flat layer 35 is the same as the thickness of the sub-electrode blocks 34, and the first electrode layer 3 has a complete and flat surface. The material of the insulating planarization layer 35 includes, but is not limited to, a resin material. Referring to fig. 18-19, when the second electrode layer 7 is a patterned electrode layer, the patterned electrode layer includes only a plurality of sub-electrode blocks 34 disposed at intervals.
In particular, the insulating substrate 6 includes, but is not limited to, glass, and the insulating substrate 6 is preferably glass, which is low in price compared with monocrystalline silicon wafers, and is beneficial to further reducing the manufacturing cost of the capacitive micromachined ultrasonic transducer.
As a preferred embodiment, the capacitive micromachined ultrasonic transducer further includes a buffer layer 8 between the second electrode layer 7 and the insulating substrate 6, wherein the second electrode layer 7 and the insulating substrate 6 have a larger adhesion with the buffer layer 8, and the buffer layer 8 can increase the connection strength between the second electrode layer 7 and the insulating substrate 6, so that the structural stability of the capacitive micromachined ultrasonic transducer is improved. When the insulating substrate 6 is glass, the material of the buffer layer 8 comprises SiO 2 、Si 3 N 4 At least one of them.
The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (12)
1. A capacitive micromachined ultrasonic transducer comprising:
a diaphragm layer;
an insulating layer disposed opposite to the diaphragm layer;
the bonding piece is positioned between the vibrating diaphragm layer and the insulating layer, the bonding piece is a metal bonding piece or an adhesive layer, and the bonding piece is used for connecting the vibrating diaphragm layer and the insulating layer and forming a plurality of closed cavities between the vibrating diaphragm layer and the insulating layer.
2. The capacitive micromachined ultrasonic transducer of claim 1, wherein the insulating layer has grooves, the metal bonding member is a metal bonding layer, and the metal bonding layer is located on a surface of the insulating layer having the grooves such that the grooves constitute the closed cavity.
3. The capacitive micromachined ultrasonic transducer of claim 2, wherein the hermetically sealed cavity comprises a first cavity surface and a second cavity surface that are disposed opposite to each other, the first cavity surface being a partial surface of a side of the diaphragm layer facing the insulating layer, the second cavity surface being a bottom of the recess.
4. The capacitive micromachined ultrasonic transducer of claim 2, wherein the metal bonding layer has a thickness of 0.1 to 10 μm.
5. The capacitive micromachined ultrasonic transducer of claim 1, wherein the insulating layer has a planar surface, the metal bond is a metal bond having a plurality of through holes therethrough, and the diaphragm layer and the insulating layer cause the through holes to form the closed cavity.
6. The capacitive micromachined ultrasonic transducer of claim 1, wherein the insulating layer has a plurality of grooves, and the adhesive layer is located on a surface of the insulating layer on a side having the grooves such that the grooves constitute the closed cavity.
7. The capacitive micromachined ultrasonic transducer of claim 6, wherein the bond paste layer is a thermoplastic resin having a melting point of 150 ℃ to 350 ℃.
8. The capacitive micromachined ultrasonic transducer of claim 6 or 7, wherein the insulating layer has a planar region and a recessed region disposed adjacent to the planar region, the recessed region being located in the recessed region, and the orthographic projections of the adhesive layer on the insulating layer are all located in the planar region.
9. The capacitive micromachined ultrasonic transducer of any of claims 1-5, wherein the metal bond comprises at least one of copper, tin, gold, silver, indium.
10. The capacitive micromachined ultrasonic transducer of any of claims 1-7, further comprising:
the first electrode layer is positioned on the surface of one side of the vibrating diaphragm layer, which is away from the insulating layer;
the second electrode layer is positioned on the surface of one side of the insulating layer, which is away from the vibrating diaphragm layer; the first electrode layer and/or the second electrode layer is/are a patterned electrode layer, the patterned electrode layer comprises a plurality of sub-electrode blocks, and the sub-electrode blocks are arranged corresponding to the cavity;
an insulating substrate on a side of the second electrode layer facing away from the insulating layer.
11. The capacitive micromachined ultrasonic transducer of claim 10, wherein the first electrode layer is the patterned electrode layer; the first electrode layer further comprises an insulating flat layer, the insulating flat layer is filled between adjacent sub-electrode blocks, and the thickness of the insulating flat layer is the same as that of the sub-electrode blocks.
12. The capacitive micromachined ultrasonic transducer of claim 10, further comprising a buffer layer between the second electrode layer and the insulating substrate, the buffer layer for bonding the second electrode layer to the insulating substrate.
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| CN202310798722.5A CN116833079A (en) | 2023-06-30 | 2023-06-30 | Capacitive Micromachined Ultrasonic Transducer |
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| CN202310798722.5A CN116833079A (en) | 2023-06-30 | 2023-06-30 | Capacitive Micromachined Ultrasonic Transducer |
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