CN116828971A - Ferroelectric diode based on doped aluminum nitride film and preparation method thereof - Google Patents
Ferroelectric diode based on doped aluminum nitride film and preparation method thereof Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 9
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- -1 trimethylcyclopentadienyl scandium Chemical compound 0.000 description 2
- MLOQZZUGWOLMCU-UHFFFAOYSA-N CC[Zr](CC)(CC)CC Chemical compound CC[Zr](CC)(CC)CC MLOQZZUGWOLMCU-UHFFFAOYSA-N 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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- DLIOSYYYCBMDCP-UHFFFAOYSA-N cyclopenta-1,3-diene;scandium(3+) Chemical compound [Sc+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 DLIOSYYYCBMDCP-UHFFFAOYSA-N 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WABPQHHGFIMREM-VENIDDJXSA-N lead-201 Chemical compound [201Pb] WABPQHHGFIMREM-VENIDDJXSA-N 0.000 description 1
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
The invention discloses a ferroelectric diode based on a doped aluminum nitride film and a preparation method thereof, and relates to the technical field of semiconductor manufacturing. The ferroelectric diode includes: the device comprises a substrate, an oxide insulating layer, a bottom electrode, a ferroelectric layer, a top electrode, a through hole and a passivation protection layer; the through holes comprise a first through hole and a second through hole; growing the oxide insulating layer on the substrate; the oxide insulating layer is deposited with the bottom electrode; the ferroelectric layer grows on a partial area of the bottom electrode; the ferroelectric layer is deposited with the top electrode; the passivation protection layers are grown on the top electrode and the bottom electrode; the top electrode leads out a first lead through the first through hole; the bottom electrode leads out a second lead through the second through hole; the ferroelectric layer adopts Al 1‑x X x And N thin films. The invention can improve the storage density and the read-write speed of the ferroelectric diode.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a ferroelectric diode based on a doped aluminum nitride film and a preparation method thereof.
Background
In the aspect of storage application, the ferroelectric diode has wide application prospect. However, conventional memories (e.g., dynamic random access memory DRAM) require periodic refreshing of data, resulting in higher power consumption. In contrast, ferroelectric diodes have non-volatility, and can maintain data storage even in the event of power failure, thereby having lower power consumption and higher energy efficiency. In addition, the ferroelectric diode can realize multi-bit storage, namely, a plurality of data bits are stored in one unit, so that the storage density is further improved, but in practical application, the current ferroelectric diode still has the problem of low storage density and low read-write speed of the device.
Disclosure of Invention
The invention aims to provide a ferroelectric diode based on a doped aluminum nitride film and a preparation method thereof, which can improve the storage density and the read-write speed of the ferroelectric diode.
In order to achieve the above object, the present invention provides the following solutions:
a ferroelectric diode based on a doped aluminum nitride film, comprising:
the device comprises a substrate, an oxide insulating layer, a bottom electrode, a ferroelectric layer, a top electrode, a through hole and a passivation protection layer;
the through holes comprise a first through hole and a second through hole;
growing the oxide insulating layer on the substrate; the oxide insulating layer is deposited with the bottom electrode; the ferroelectric layer grows on a partial area of the bottom electrode; the ferroelectric layer is deposited with the top electrode; the passivation protection layers are grown on the top electrode and the bottom electrode; the top electrode leads out a first lead through the first through hole; the bottom electrode leads out a second lead through the second through hole; the ferroelectric layer adopts Al 1-x X x And N thin films.
Optionally, the ferroelectric layer has a thickness of 3 to 50nm.
Optionally, the thickness of the top electrode is 30 nm-50 nm.
Optionally, the thickness of the bottom electrode is 30 nm-50 nm.
Optionally, the passivation layer is made of silicon nitride, and the thickness of the passivation layer is 100 nm-200 nm.
The invention also provides a ferroelectric diode preparation method based on the doped aluminum nitride film, which comprises the following steps:
s1, growing an oxide insulating layer on a substrate;
s2, depositing a bottom electrode on the oxide insulating layer by adopting a physical vapor deposition method;
s3, growing a ferroelectric layer on the bottom electrode, and growing by adopting an atomic layer deposition method;
s4, depositing a layer of metal electrode on the surface of the ferroelectric layer, and depositing a bottom electrode by a physical vapor deposition method;
s5, performing graphical treatment on the metal electrode through a photoetching technology to obtain the shape and the size of the electrode;
s6, growing passivation protection layers, and then opening the first through hole and the second through hole to lead out the upper end and the lower end of the diode.
Optionally, the ferroelectric layer is grown under the following conditions: the temperature of the reactor is raised to the required reaction temperature of 250-450 ℃; the reactor was evacuated to a desired pressure of 10 -5 To 10 -7 Between Torr; a constant vacuum is maintained.
Optionally, the cycle period of atomic layer deposition is set as follows:
s31, cleaning: by injecting Ar or N into the reactor at the beginning and end of the cycle 2 Gas to eliminate the remaining gas in the previous cycle;
s32, feeding a metal precursor 1: trimethylaluminum is used as the metal precursor 1 and is injected into the reactor;
s33, cleaning: by injection of Ar or N 2 A gas to eliminate excess metal precursor 1 and by-products;
s34, nitrogenSource feed: using NH 3 As a nitrogen source, and injecting the nitrogen source into the reactor;
s35, cleaning: by injection of Ar or N 2 A gas to eliminate excess nitrogen source and byproducts;
s36, feeding a metal precursor 2: the precursor corresponding to X is used as a metal precursor 2, and the metal precursor 2 is injected into the reactor;
s37, cleaning: by injection of Ar or N 2 Gas to eliminate excess metal precursor 2 and by-products.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention discloses a ferroelectric diode based on a doped aluminum nitride film and a preparation method thereof, wherein the ferroelectric diode comprises a substrate, an oxide insulating layer, a bottom electrode, a ferroelectric layer, a top electrode, a through hole and a passivation protection layer, wherein the through hole comprises a first through hole and a second through hole, and is formed by Al 1-x X x The ferroelectric layer is prepared by the N film, so that the crystallization quality of the ferroelectric layer can be greatly improved, the ferroelectric layer has excellent performance in performance indexes such as polarized charge density, residual polarized charge density and the like, and the storage density and the read-write speed of the ferroelectric diode are remarkably improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of growing an oxide insulating layer and a bottom electrode on a substrate in this embodiment;
fig. 2 is a schematic diagram of the growth of ferroelectric layers and top electrodes in this embodiment;
FIG. 3 is a schematic diagram of a patterned top electrode and ferroelectric layer in this embodiment;
FIG. 4 is a schematic diagram of a growth protecting layer in this embodiment;
FIG. 5 is a schematic diagram of etching left and right through holes in the present embodiment;
FIG. 6 is a schematic diagram of a grown-through-hole lead layer in this embodiment;
fig. 7 is a schematic diagram of a patterned lead in this embodiment.
Reference numerals:
101. passivation protection layer; 102. a top electrode; 103. a ferroelectric layer; 104. a bottom electrode; 105. an oxide insulating layer; 106. a substrate; 201. a first lead; 202. and a second lead.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a ferroelectric diode based on a doped aluminum nitride film and a preparation method thereof, which can improve the storage density and the read-write speed of the ferroelectric diode.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 7, the present invention provides a ferroelectric diode based on a doped aluminum nitride film, comprising: a substrate 106, an oxide insulating layer 105, a bottom electrode 104, a ferroelectric layer 103, a top electrode 102, a via hole, and a passivation protection layer 101.
Wherein the through holes include a first through hole and a second through hole.
Specifically, the oxide insulating layer 105 is grown on the substrate 106; the oxide insulating layer 105 has the bottom electrode 104 deposited thereon; the ferroelectric layer 103 is grown on a partial region of the bottom electrode 104; the ferroelectric layer 103 has the top electrode 102 deposited thereon; the passivation protection is grown on the top electrode 102 and the bottom electrode 104Layer 101; the top electrode 102 leads out a first lead 201 through the first through hole; the bottom electrode 104 leads out of a second lead 202 through the second through hole; the ferroelectric layer 103 is made of Al 1-x X x And N thin films.
In this embodiment, the ferroelectric layer 103 has a thickness of 3 to 50nm. The thickness of the top electrode 102 is 30nm to 50nm. The thickness of the bottom electrode 104 is 30nm to 50nm. The passivation layer 101 is made of silicon nitride (Si 3 N 4 ) And the passivation layer 101 has a thickness of 100nm to 200nm. The oxidation insulating layer is formed by silicon dioxide, and the thickness of the oxidation insulating layer is 10-20 nm; the first through hole and the second through hole are both aluminum.
In addition, the invention also provides a ferroelectric diode preparation method based on the doped aluminum nitride film, which comprises the following steps:
s1, growing an oxide insulating layer 105 on a substrate 106.
S2, depositing the bottom electrode 104 on the oxide insulating layer 105 by a physical vapor deposition method. The electrode materials used include, but are not limited to, titanium nitride, aluminum, platinum, molybdenum, tungsten, and the like.
And S3, growing a ferroelectric layer 103 on the bottom electrode 104, and growing by adopting an atomic layer deposition method. The ferroelectric layer 103 is made of Al 1-x X x N(X＝Sc、Zr、Hf、Ti，x＝0.15～0.35。
S4, depositing a layer of metal electrode on the surface of the ferroelectric layer 103, and depositing the bottom electrode 104 by a physical vapor deposition method. The electrode materials used include, but are not limited to, titanium nitride, aluminum, platinum, molybdenum, tungsten, and the like.
And S5, performing patterning treatment on the metal electrode by a photoetching technology to obtain the shape and the size of the electrode.
S6, growing a passivation protection layer 101, and then leading out the upper end and the lower end of the diode through the first through hole and the second through hole.
Wherein the ferroelectric layer 103 is grown under the following conditions: the temperature of the reactor is raised to the required reaction temperature of 250-450 ℃; the reactor was evacuated to a desired pressure of 10 -5 To 10 -7 Between Torr; a constant vacuum is maintained.The method comprises the following steps:
heating the reactor to the required reaction temperature of 250-450 ℃; the reactor was evacuated to the desired pressure at 10 -5 To 10 -7 Between Torr. Maintaining a constant vacuum level can improve the purity and stability of the reactants and thus improve the quality of the film. The reaction precursor is trimethyl aluminum TMA (used as an aluminum source), a precursor corresponding to X and ammonia NH 3 (as a nitrogen source). The substrate 106 is cleaned prior to Atomic Layer Deposition (ALD) growth using an organic solvent (e.g., ethanol or isopropanol) and deionized water, etc., to remove surface impurities and contaminants; then, nitriding treatment is carried out: using nitrides (e.g. NH 3 Or N 2 ) The substrate 106 is nitrided to form a nitrided layer to enhance Al 1-x X x Adhesion and quality of N film. Wherein the precursor of X includes, but is not limited to: tricyclopentadienyl scandium Cp 3 Sc, trimethylcyclopentadienyl scandium (MeCp) 3 Sc or dimethylcyclopentadienyl scandium chloride (MeCp) 2 ScCl (as Sc source), tetraethyl hafnium methyl TEMAH (as Hf source), tetraethyl zirconium methyl TEMAZ (as Zr source), and tetraethyl titanium methyl TEMAT (as Ti source).
In step S3, the cycle period of the atomic layer deposition is set as follows:
s31, cleaning: by injecting Ar or N into the reactor at the beginning and end of the cycle 2 Gas to eliminate the remaining gas in the previous cycle;
s32, feeding a metal precursor 1: trimethylaluminum is used as the metal precursor 1 and is injected into the reactor;
s33, cleaning: by injection of Ar or N 2 A gas to eliminate excess metal precursor 1 and by-products;
s34, nitrogen source feeding: using NH 3 As a nitrogen source, and injecting the nitrogen source into the reactor;
s35, cleaning: by injection of Ar or N 2 A gas to eliminate excess nitrogen source and byproducts;
s36, feeding a metal precursor 2: the precursor corresponding to X is used as a metal precursor 2, and the metal precursor 2 is injected into the reactor;
s37, cleaning: by injection of Ar or N 2 Gas to eliminate excess metal precursor 2 and by-products.
In this embodiment, the ALD growth process precisely controls the thickness of the thin film by controlling the number of reaction cycles. The doping concentration of the doping element X is controlled by adjusting the ratio of the metal precursor 1 and the metal precursor 2 in the cycle period. Growth of Al by ALD 1-x X x The atomic level control of the N film and ALD growth can be realized, so that the uniformity and chemical composition of the film are precisely controlled, and the film with high quality is obtained. The diode can realize the inversion of the polarization state by applying an external electric field so as to achieve the switching of the storage state. The Al is 1-x X x The doping of the N ferroelectric layer 103 can adjust its ferroelectric properties to achieve optimization of diode performance. The diode can be applied to the field of nonvolatile memories.
Based on the above technical solution, the following embodiments are provided:
growing an oxide insulating layer 105 on a substrate 106, and then growing a bottom electrode 104 (104) on the oxide insulating layer 105, wherein the substrate 106 is silicon; the oxide insulating layer 105 is silicon dioxide, and the thickness is 10-20 nm; the bottom electrode 104 includes, but is not limited to, titanium nitride, aluminum, platinum, molybdenum, tungsten, etc., grown by PVD to a thickness of 30nm to 50nm, as shown in fig. 1.
A ferroelectric layer 103 is grown on the bottom electrode 104, and then a top electrode 102 is grown on the ferroelectric layer 103, wherein the ferroelectric layer 103 is Al 1-x X x N, thickness 3-50 nm, growing by ALD method, x= Sc, zr, hf, ti, x=0.15-0.35; the top electrode 102 includes, but is not limited to, titanium nitride, aluminum, platinum, molybdenum, tungsten, etc., grown by PVD to a thickness of 30nm to 50nm, as shown in fig. 2.
Photoresist is applied to the top electrode 102 and photolithographic development is performed, as shown in fig. 3.
A passivation layer 101 is grown on the basis of fig. 3, wherein the passivation layer 101 is silicon nitride, as shown in fig. 4.
The left and right vias are etched by photolithographic development on the grown passivation layer of fig. 4, as shown in fig. 5.
The wire is grown on a 5-basis, wherein the wire is metallic aluminum, as shown in fig. 6.
Finally, in fig. 6, the first contact point and the second contact point of the lead are patterned, and the left contact point and the right contact point correspond to the upper end and the lower end of the ferroelectric diode respectively, as shown in fig. 7.
The embodiment has the following beneficial effects:
compared with the prior art, by adopting Al 1-x X x N is used as a ferroelectric layer, and the prepared ferroelectric diode has excellent performance in performance indexes such as polarized charge density, residual polarized charge density and the like because the crystallization quality can be greatly improved. The ALD method can prepare a very uniform ferroelectric layer, so that the prepared ferroelectric diode has good stability and can stably work for a long time. Ferroelectric diodes have a wide application prospect, for example, in the fields of memories, sensors and the like. Therefore, the invention has important application value.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the core concept of the invention; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (8)
1. A ferroelectric diode based on a doped aluminum nitride film, comprising:
the device comprises a substrate, an oxide insulating layer, a bottom electrode, a ferroelectric layer, a top electrode, a through hole and a passivation protection layer;
the through holes comprise a first through hole and a second through hole;
growing the oxide insulating layer on the substrate; the oxide insulating layer is deposited with the bottom electrode; the ferroelectric layer grows on a partial area of the bottom electrode; the ferroelectric layer is deposited with the top electrode; the passivation protection layers are grown on the top electrode and the bottom electrode; the top electrode leads out a first lead through the first through hole; the bottom electrode leads out a second lead through the second through hole; the ferroelectric layer adopts Al 1-x X x And N thin films.
2. The doped aluminum nitride thin film based ferroelectric diode according to claim 1, wherein the ferroelectric layer has a thickness of 3 to 50nm.
3. The doped aluminum nitride thin film based ferroelectric diode according to claim 1, wherein the thickness of the top electrode is 30nm to 50nm.
4. The doped aluminum nitride thin film based ferroelectric diode according to claim 1, wherein the thickness of the bottom electrode is 30nm to 50nm.
5. The doped aluminum nitride thin film based ferroelectric diode according to claim 1, wherein the passivation layer is made of silicon nitride, and the passivation layer has a thickness of 100nm to 200nm.
6. A method for manufacturing a ferroelectric diode based on a doped aluminum nitride film, comprising:
s1, growing an oxide insulating layer on a substrate;
s2, depositing a bottom electrode on the oxide insulating layer by adopting a physical vapor deposition method;
s3, growing a ferroelectric layer on the bottom electrode, and growing by adopting an atomic layer deposition method;
s4, depositing a layer of metal electrode on the surface of the ferroelectric layer, and depositing a bottom electrode by a physical vapor deposition method;
s5, performing graphical treatment on the metal electrode through a photoetching technology to obtain the shape and the size of the electrode;
s6, growing passivation protection layers, and then opening the first through hole and the second through hole to lead out the upper end and the lower end of the diode.
7. The method for preparing a ferroelectric diode based on a doped aluminum nitride film according to claim 6, wherein the growth conditions of the ferroelectric layer are: the temperature of the reactor is raised to the required reaction temperature of 250-450 ℃; the reactor was evacuated to a desired pressure of 10 -5 To 10 -7 Between Torr; a constant vacuum is maintained.
8. The method of manufacturing a ferroelectric diode based on a doped aluminum nitride thin film according to claim 6, wherein the cycle period of atomic layer deposition is set as follows:
s31, cleaning: by injecting Ar or N into the reactor at the beginning and end of the cycle 2 Gas to eliminate the remaining gas in the previous cycle;
s32, feeding a metal precursor 1: trimethylaluminum is used as the metal precursor 1 and is injected into the reactor;
s33, cleaning: by injection of Ar or N 2 A gas to eliminate excess metal precursor 1 and by-products;
s34, nitrogen source feeding: using NH 3 As a nitrogen source, and injecting the nitrogen source into the reactor;
s35, cleaning: by injection of Ar or N 2 A gas to eliminate excess nitrogen source and byproducts;
s36, feeding a metal precursor 2: the precursor corresponding to X is used as a metal precursor 2, and the metal precursor 2 is injected into the reactor;
s37, cleaning: by injection of Ar or N 2 Gas to eliminate excess metal precursor 2 and by-products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310662600.3A CN116828971A (en) | 2023-06-06 | 2023-06-06 | Ferroelectric diode based on doped aluminum nitride film and preparation method thereof |
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| CN202310662600.3A CN116828971A (en) | 2023-06-06 | 2023-06-06 | Ferroelectric diode based on doped aluminum nitride film and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117228641A (en) * | 2023-11-16 | 2023-12-15 | 北京大学 | Preparation method of nitride ferroelectric film for compensating nitrogen vacancy and inhibiting leakage current |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117228641A (en) * | 2023-11-16 | 2023-12-15 | 北京大学 | Preparation method of nitride ferroelectric film for compensating nitrogen vacancy and inhibiting leakage current |
| CN117228641B (en) * | 2023-11-16 | 2024-01-30 | 北京大学 | Preparation method of nitride ferroelectric film for compensating nitrogen vacancy and inhibiting leakage current |
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