CN116826512A - Hybrid integrated multi-wavelength mode-locked laser based on butt coupling - Google Patents
Hybrid integrated multi-wavelength mode-locked laser based on butt coupling Download PDFInfo
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- CN116826512A CN116826512A CN202310894721.0A CN202310894721A CN116826512A CN 116826512 A CN116826512 A CN 116826512A CN 202310894721 A CN202310894721 A CN 202310894721A CN 116826512 A CN116826512 A CN 116826512A
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- 238000010168 coupling process Methods 0.000 title claims abstract description 23
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- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
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- 238000001914 filtration Methods 0.000 claims description 3
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- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 8
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- 238000010023 transfer printing Methods 0.000 abstract description 4
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- 238000012546 transfer Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 230000001360 synchronised effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Abstract
The embodiment of the invention discloses a hybrid integrated multi-wavelength mode-locked laser based on butt coupling. The hybrid integrated multi-wavelength mode-locked laser comprises a gain chip and a passive external cavity chip, wherein the output end of the gain chip is in butt joint coupling with the input end of the passive external cavity chip; the gain chip comprises a saturated absorber region and a gain region, the saturated absorber region and the gain region are locked under the drive of an external modulation signal, and pulse lasers with N wavelengths are output; the passive external cavity chip comprises 1 input end and N output ends, pulse lasers with N wavelengths are coupled in by the input end of the passive external cavity chip, and are respectively output by the N output ends after being transmitted and modulated in the passive external cavity chip; n is an integer greater than or equal to 2. The mode-locked laser provided by the embodiment of the invention consists of two independent chips, the gain part is not limited by micro transfer printing and bonding processes, and the mode-locked laser is mixed and integrated in a butt coupling mode, and the output multi-wavelength mode-locked laser can be used for a WDM system.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a hybrid integrated multi-wavelength mode-locked laser based on butt coupling.
Background
The ultra-short pulse generated by the mode-locked laser correspondingly has a wider spectral width, which demonstrates the application potential of the mode-locked laser with the wide spectral width as a light source in a wavelength division multiplexing system. In the prior art, a Mode-locked evanescent field laser (Mode-locked silicon evanescent lasers, ML-SEL) has been proposed for iii/v-on-Si, which has a broad spectral width and can be integrated with arrayed waveguide gratings as a multi-wavelength light source in WDM system applications.
However, the above-described conventional III/V-on-Si mode-locked evanescent field laser has the following problems: first, the gain medium of this type of laser is integrated on top of the Si waveguide by micro transfer or bonding techniques, which results in the gain section being limited by the micro transfer or bonding process, which makes the gain section design limiting; in addition, the gain section of the micro transfer or bonding process has moderate thermal properties, limiting the output power that can be achieved by the laser.
Disclosure of Invention
The embodiment of the invention provides a mixed integrated multi-wavelength mode-locked laser based on butt coupling, wherein a gain part and a passive waveguide part of the mixed integrated multi-wavelength mode-locked laser consist of two independent chips, compared with a III/V-on-Si mode-locked evanescent field laser, the gain part is more flexible, the gain part is not limited by micro transfer printing and bonding processes, and the mixed integrated multi-wavelength mode-locked laser based on butt coupling can be used for a WDM system.
The embodiment of the invention provides a hybrid integrated multi-wavelength mode-locked laser based on butt coupling, which comprises a gain chip and a passive external cavity chip, wherein the output end of the gain chip is in butt coupling with the input end of the passive external cavity chip;
the gain chip comprises a saturated absorber region and a gain region, the saturated absorber region and the gain region are locked in mode under the drive of an external modulation signal, and pulse lasers with N wavelengths are output;
the passive external cavity chip comprises 1 input end and N output ends, the pulse lasers with N wavelengths are coupled in by the input end of the passive external cavity chip, and are respectively output by the N output ends of the passive external cavity chip after being transmitted and modulated in the passive external cavity chip;
wherein N is an integer greater than or equal to 2.
Optionally, the passive external cavity chip comprises a multimode interferometer, a 1×n arrayed waveguide grating, an optical delay line and a phase modulator which are coupled and connected along the transmission direction of the light beam;
the multimode interferometer is used for generating double Gaussian field distribution and improving the transmission bandwidth of the pulse lasers with different wavelengths in N channels;
the array waveguide grating is used for separating the wide spectrum generated by the gain chip into N channels of pulse lasers with different wavelengths;
the optical delay line and the phase modulator are the same as the output waveguide dimension of the array waveguide grating, and are used for compensating the optical path difference of the pulse laser with different wavelengths of N channels due to the dispersion effect.
Optionally, the passive external cavity chip further includes a bragg grating reflector array disposed at the output end, where the bragg grating reflector array includes N bragg grating reflectors, and the bragg grating reflectors are used for filtering light with wavelengths outside the gain range.
Optionally, the passive external cavity chip further comprises N heaters, and the heaters are used for adjusting the temperature of the bragg grating reflector.
Optionally, the passive external cavity chip comprises a silicon-on-insulator chip, the silicon-on-insulator chip comprises a waveguide structure, and the multimode interferometer, the arrayed waveguide grating, the optical delay line and the phase modulator are connected through the waveguide structure.
Optionally, the gain chip and the passive external cavity chip are placed on a three-dimensional optical platform or a six-dimensional optical platform, and an output end of the gain chip is dynamically aligned with an input end of the passive external cavity chip through the three-dimensional optical platform or the six-dimensional optical platform.
Optionally, a docking interface between the output end of the gain chip and the input end of the passive external cavity chip is set at a preset inclination angle.
Optionally, the preset inclination angle is greater than or equal to 5 ° and less than or equal to 15 °.
Optionally, an antireflection film is disposed at a butt joint interface between the output end of the gain chip and the input end of the passive external cavity chip.
Optionally, the gain chip comprises a III/V gain chip based on an InGaAsP/InP material system.
The embodiment of the invention provides a hybrid integrated multi-wavelength mode-locked laser based on butt coupling, which comprises a gain chip and a passive external cavity chip, wherein the output end of the gain chip is in butt coupling with the input end of the passive external cavity chip; the gain chip comprises a saturated absorber region and a gain region, the saturated absorber region and the gain region are locked under the drive of an external modulation signal, and pulse lasers with N wavelengths are output; the passive external cavity chip comprises 1 input end and N output ends, pulse lasers with N wavelengths are coupled in by the input end of the passive external cavity chip, and are respectively output by the N output ends of the passive external cavity chip after being transmitted and modulated in the passive external cavity chip; wherein N is an integer greater than or equal to 2. The gain chip is arranged to generate mode-locked laser, the mode-locked laser is modulated by the passive external cavity chip and then output, wherein the gain part and the passive waveguide part are composed of two independent chips, compared with a III/V-on-Si mode-locked evanescent field laser, the gain part is more flexible, the gain part is not limited by micro transfer printing and bonding processes, and the output multi-wavelength mode-locked laser can be used for a WDM system by adopting a butt coupling mode for mixing and integrating.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of another hybrid integrated multi-wavelength mode-locked laser based on butt coupling according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another hybrid integrated multi-wavelength mode-locked laser based on butt coupling according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic structural diagram of a hybrid integrated multi-wavelength mode-locked laser based on butt coupling according to an embodiment of the present invention, and referring to fig. 1, the hybrid integrated multi-wavelength mode-locked laser includes a gain chip 1 and a passive external cavity chip 2, and an output end 11 of the gain chip 1 is butt-coupled with an input end 21 of the passive external cavity chip 2; the gain chip 1 comprises a saturated absorber region 3 and a gain region 4, the saturated absorber region 3 and the gain region 4 are locked in mode under the drive of an external modulation signal, and pulse lasers with N wavelengths are output; the passive external cavity chip 2 includes 1 input end and N output ends (n=4 is taken as an example in fig. 1 schematically and is not limiting to the embodiment of the present invention), the pulse lasers with N wavelengths are coupled in by the input end 21 of the passive external cavity chip 2, and after being transmitted and modulated in the passive external cavity chip 2, are output by the output ends of the N passive external cavity chips 2 respectively; wherein N is an integer greater than or equal to 2.
Where the gain chip 1 is capable of generating mode-locked pulses, in one embodiment, the gain chip 1 may optionally comprise a III/V gain chip based on an InGaAsP/InP material system, suitable for optical fiber communications in the 1310nm and 1550nm bands. The gain chip 1 is manufactured by adopting a shallow ridge waveguide structure and comprises a saturated absorber region 3 and a gain region 4. The saturated absorber region 3 and the gain region 4 are electrically isolated by ion implantation, and the length ratio of the saturated absorber region 3 to the gain region 4 is controlled to be about 10%. When generating a pulsed laser, the external modulation signal includes: the reverse bias voltage is applied to the saturated absorber region 3, the forward current is applied to the gain region 4 as a starting mechanism of passive mode locking, and meanwhile, the RF radio frequency signal is loaded to the saturated absorber 3 through the biaser, and the multiple wavelength channels share one saturated absorber, so that synchronous mode locking of different wavelength channels can be realized.
The passive external cavity chip 2 modulates and outputs the pulse laser, and improves the performance of the pulse laser. Optionally, with continued reference to fig. 1, the passive external cavity chip 2 includes a multimode interferometer 5, a 1×n arrayed waveguide grating 6, an optical delay line 7, and a phase modulator 8 coupled along the beam transmission direction; the multimode interferometer 5 is used for generating double Gaussian field distribution and improving the transmission bandwidth of pulse lasers with different wavelengths in N channels; the array waveguide grating 6 is used for separating the wide spectrum generated by the gain chip 1 into N channels of pulse lasers with different wavelengths; the optical delay line 7 and the phase modulator 8 have the same dimensions as the output waveguide of the arrayed waveguide grating 6, and are used for compensating the optical path difference of the pulse lasers with different wavelengths of the N channels due to the dispersion effect.
In particular embodiments, the passive external cavity chip 2 may optionally comprise a silicon-on-insulator (SOI) chip comprising a waveguide structure through which the multimode interferometer 5, the arrayed waveguide grating 6, the optical delay line 7 and the phase modulator 8 are connected. The flattened 1×n arrayed waveguide grating combined by the multimode interferometer 5 and the arrayed waveguide grating 6 separates the broad spectrum generated by the mode-locked laser into channels with different wavelengths, and has a wider transmission bandwidth. The optical delay line 7 and the phase modulator 8 compensate the optical path difference of the gain light with different wavelengths caused by the dispersion effect, thereby helping to realize synchronous mode locking of different wavelength channels. The optical delay line 7 and the phase modulator 8 have the same dimensions as the output waveguides of the arrayed waveguide grating 6, meaning that the number of channels of the arrayed waveguide grating 6 is the same for the number of optical delay lines 7 and the phase modulator 8. In other embodiments, the passive external cavity chip may also be made of SiN-based or other materials, and may be designed according to practical situations when implemented.
According to the technical scheme, the gain chip is arranged to generate mode-locked laser, the mode-locked laser is modulated by the passive external cavity chip and then output, wherein the gain part and the passive waveguide part are composed of two independent chips, compared with a III/V-on-Si mode-locked evanescent field laser, the mode-locked evanescent field laser is more flexible, the gain part is not limited by micro transfer printing and bonding processes, and the mode-locked laser is mixed and integrated in a butt coupling mode, so that the output multi-wavelength mode-locked laser can be used for a WDM system.
Fig. 2 is a schematic structural diagram of another hybrid integrated multi-wavelength mode-locked laser based on butt coupling according to an embodiment of the present invention, referring to fig. 2, optionally, the passive external cavity chip 2 further includes a bragg grating mirror array disposed at an output end, where the bragg grating mirror array includes N bragg grating mirrors 9, and the bragg grating mirrors 9 are used to filter light with wavelengths outside a gain range.
The Bragg grating reflector 9 is used as an intracavity filter for filtering stray light outside the gain bandwidth of the mode-locked laser, and forms resonant cavity surfaces of different wavelength channels, so that the Bragg grating reflector is convenient to integrate with other silicon optical devices.
With continued reference to fig. 2, the passive external cavity chip 2 optionally further comprises N heaters 10, the heaters 10 being used to adjust the temperature of the bragg grating mirror 9. The center wavelength of the Bragg grating reflector 9 can be adjusted in a thermal tuning manner, so that wavelength tuning is realized.
According to the technical scheme, the gain chip and the passive external cavity chip are in butt coupling, and in order to improve coupling efficiency, a dynamic coupling mode can be adopted. In one embodiment, optionally, the gain chip and the passive external cavity chip are placed on a three-dimensional optical platform or a six-dimensional optical platform, and the output end of the gain chip is dynamically aligned with the input end of the passive external cavity chip through the three-dimensional optical platform or the six-dimensional optical platform.
Because the hybrid integrated mode-locked laser is very sensitive to the reflection of the butt joint interface, in order to reduce the reflection of the butt joint interface, the output end of the gain chip and the butt joint interface of the input end of the passive external cavity chip are optionally arranged at a preset inclination angle. Optionally, the preset inclination angle is greater than or equal to 5 ° and less than or equal to 15 °, and may be designed according to practical situations during implementation, which is not limited in the embodiment of the present invention.
In order to further reduce reflection, optionally, an anti-reflection film (AR-coating) is provided at the interface of the output end of the gain chip and the input end of the passive external cavity chip.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. The mixed integrated multi-wavelength mode-locked laser based on butt coupling is characterized by comprising a gain chip and a passive external cavity chip, wherein the output end of the gain chip is in butt coupling with the input end of the passive external cavity chip;
the gain chip comprises a saturated absorber region and a gain region, the saturated absorber region and the gain region are locked in mode under the drive of an external modulation signal, and pulse lasers with N wavelengths are output;
the passive external cavity chip comprises 1 input end and N output ends, the pulse lasers with N wavelengths are coupled in by the input end of the passive external cavity chip, and are respectively output by the N output ends of the passive external cavity chip after being transmitted and modulated in the passive external cavity chip;
wherein N is an integer greater than or equal to 2.
2. The hybrid integrated multi-wavelength mode-locked laser of claim 1, wherein the passive external cavity chip comprises a multimode interferometer, a 1 x N arrayed waveguide grating, an optical delay line, and a phase modulator coupled along a beam transmission direction;
the multimode interferometer is used for generating double Gaussian field distribution and improving the transmission bandwidth of the pulse lasers with different wavelengths in N channels;
the array waveguide grating is used for separating the wide spectrum generated by the gain chip into N channels of pulse lasers with different wavelengths;
the optical delay line and the phase modulator are the same as the output waveguide dimension of the array waveguide grating, and are used for compensating the optical path difference of the pulse laser with different wavelengths of N channels due to the dispersion effect.
3. The hybrid integrated multi-wavelength mode-locked laser of claim 2, wherein the passive external cavity chip further comprises a bragg grating mirror array disposed at the output, the bragg grating mirror array comprising N bragg grating mirrors for filtering out light of wavelengths outside the gain range.
4. The hybrid integrated multi-wavelength mode-locked laser of claim 3, wherein the passive external cavity chip further comprises N heaters for adjusting the temperature of the bragg grating mirror.
5. The hybrid integrated multi-wavelength mode-locked laser of claim 2, wherein the passive external cavity chip comprises a silicon-on-insulator chip comprising a waveguide structure through which the multimode interferometer, the arrayed waveguide grating, the optical delay, and the phase modulator line are connected.
6. The hybrid integrated multi-wavelength mode-locked laser of claim 1, wherein the gain chip and the passive external cavity chip are placed on a three-dimensional optical platform or a six-dimensional optical platform, and wherein an output of the gain chip is dynamically aligned with an input of the passive external cavity chip through the three-dimensional optical platform or the six-dimensional optical platform.
7. The hybrid integrated multi-wavelength mode-locked laser of claim 1, wherein a butt-joint interface of an output end of the gain chip and an input end of the passive external cavity chip is set at a preset inclination angle.
8. The hybrid integrated multi-wavelength mode-locked laser of claim 7, wherein the preset tilt angle is greater than or equal to 5 ° and less than or equal to 15 °.
9. The hybrid integrated multi-wavelength mode-locked laser of claim 1, wherein a butt-joint interface of an output end of the gain chip and an input end of the passive external cavity chip is provided with an anti-reflection film.
10. The hybrid integrated multi-wavelength mode-locked laser of claim 1, wherein the gain chip comprises a group iii/v gain chip based on an InGaAsP/InP material system.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310894721.0A CN116826512A (en) | 2023-07-20 | 2023-07-20 | Hybrid integrated multi-wavelength mode-locked laser based on butt coupling |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310894721.0A CN116826512A (en) | 2023-07-20 | 2023-07-20 | Hybrid integrated multi-wavelength mode-locked laser based on butt coupling |
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| CN116826512A true CN116826512A (en) | 2023-09-29 |
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| CN202310894721.0A Pending CN116826512A (en) | 2023-07-20 | 2023-07-20 | Hybrid integrated multi-wavelength mode-locked laser based on butt coupling |
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