CN116825748A - Lining plate for power module and power module - Google Patents
Lining plate for power module and power module Download PDFInfo
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- CN116825748A CN116825748A CN202310929404.8A CN202310929404A CN116825748A CN 116825748 A CN116825748 A CN 116825748A CN 202310929404 A CN202310929404 A CN 202310929404A CN 116825748 A CN116825748 A CN 116825748A
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- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
The application relates to the technical field of power modules, in particular to a lining plate for a power module and the power module. The application aims to solve the problem that the electrical performance of a product is reduced on the premise of ensuring the manufacturability and the product reliability of the power module. For this purpose, on the etching layer of the lining board for the power module, the upper bridge arm input pole metal layer is symmetrically arranged in two areas for connecting the upper bridge arm chip, and the lower bridge arm input pole metal layer is symmetrically arranged in two areas for connecting the lower bridge arm chip; the upper bridge arm control electrode metal layer is symmetrically arranged in two areas for connecting the upper bridge arm driving element and is respectively positioned at the outer sides of the two areas for connecting the upper bridge arm chip; the lower bridge arm control electrode metal layers are symmetrically arranged in two areas for connecting the lower bridge arm driving elements and are respectively positioned at the outer sides of the two areas for connecting the lower bridge arm chips. The lining plate for the power module can realize balance among manufacturability, reliability and electrical property on the premise of good electrical property.
Description
Technical Field
The application relates to the technical field of power modules, in particular to a lining plate for a power module and the power module.
Background
The power semiconductor device is a core component of the power electronic converter and is responsible for switching on and off a circuit. An excellent power module needs to have good manufacturing manufacturability, electrical performance, reliability, and the like. The lining board layout of the power module determines the electrical performance and the manufacturing process of the power module product to a great extent, and indirectly influences the reliability of the power module.
Conventional power modules have two process routes, a leadframe structure and a crimp pin (press fit), according to the definition of the manufacturing process. The power module in which the lead frame process is used, because of the limitation of the module size and the process of the lead frame, needs to be balanced between electrical performance and manufacturability and reliability. In practice, in order to ensure the manufacturability and the product reliability of the power module, one process route is to cancel the kelvin source electrode in the chip wire bonding process, and drive the chip through the main source electrode of the chip, so as to simplify the wire bonding process and improve the manufacturability and the reliability of the product. However, this process route inevitably causes problems such as generation of stray inductance and poor current balance, which results in degradation of the electrical performance of the power module.
Accordingly, there is a need in the art for a new solution to the above-mentioned problems.
Disclosure of Invention
In order to solve at least one of the above problems in the prior art, that is, to solve the problem that the electrical performance of the product is reduced in the existing power module under the premise of ensuring manufacturability and product reliability, the first aspect of the present application provides a liner for a power module, which includes an insulating layer and an etching layer located on one side of the insulating layer, wherein the etching layer is etched to form:
a direct current negative electrode metal layer;
the upper bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the upper bridge arm chip;
the lower bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the lower bridge arm chip;
the upper bridge arm control electrode metal layer is symmetrically arranged in two areas used for connecting the upper bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the upper bridge arm chip on the upper bridge arm input electrode metal layer;
and the lower bridge arm control electrode metal layer is symmetrically arranged on the two areas used for connecting the lower bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the lower bridge arm chip on the lower bridge arm input electrode metal layer.
In the preferred technical scheme of the liner plate for the power module, the upper bridge arm input electrode metal layer comprises a first metal layer and a second metal layer, the first metal layer and the second metal layer extend from a first side edge of the etching layer to a second side edge opposite to the first side edge, and areas, used for being connected with the upper bridge arm chip, on the first metal layer and the second metal layer are located close to the second side edge.
In the preferable technical scheme of the lining board for the power module, an upper bridge arm input electrode test metal layer for connecting an upper bridge arm input electrode test busbar is further etched on the etching layer, and the upper bridge arm input electrode test metal layer is led out from one of the first metal layer and the second metal layer and extends to the second side edge.
In a preferred embodiment of the above-described backing plate for a power module, the first metal layer and the second metal layer are used for connecting positive electrode bus bars in an end region near the first side edge.
In the preferable technical scheme of the lining board for the power module, a relay metal layer is further etched and formed on the etching layer, and the relay metal layer is located in the lower bridge arm input electrode metal layer.
In the preferable technical scheme of the lining board for the power module, the lower bridge arm input electrode metal layer is in a Y shape and is partially positioned between the first metal layer and the second metal layer, two areas on the lower bridge arm input electrode metal layer for connecting the lower bridge arm chip are respectively positioned on two parts on the upper part of the Y shape, and the areas on the first metal layer and the second metal layer for connecting the upper bridge arm chip are respectively adjacent to two sides on the lower part of the Y shape.
In the preferable technical scheme of the lining board for the power module, the lower end part of the Y shape extends from between the first metal layer and the second metal layer towards the direction of the first metal layer or the second metal layer, the lower end part of the Y shape is used for being connected with an alternating current busbar, and the area extending out of the lower end part of the Y shape is used for being connected with an upper bridge arm output electrode busbar.
In the preferred technical scheme of the lining board for the power module, the etching layer is further etched to form a first thermistor metal layer and a second thermistor metal layer, and the first thermistor metal layer and the second thermistor metal layer are arranged side by side and are located on one side of the lower end of the Y-shaped structure.
In the preferable technical scheme of the lining board for the power module, the direct current negative electrode metal layer is of a T shape, two sides of the upper portion of the T shape are respectively adjacent to the first metal layer and the second metal layer, the lower portion of the T shape is inserted between the two Y-shaped upper portions of the lower bridge arm input electrode metal layer, and the upper portion of the T shape is used for being connected with the negative electrode busbar.
In the preferable technical scheme of the lining board for the power module, a lower bridge arm output electrode metal layer used for being connected with the lower bridge arm output electrode busbar is further etched and formed on the etching layer, and the lower bridge arm output electrode metal layer extends from the upper corner of the T-shaped structure to the second side edge along the edge of the etching layer.
In the preferable technical scheme of the lining board for the power module, the upper bridge arm control electrode metal layer is in a U shape, two side areas of the U shape extend to the outer sides of areas, used for being connected with the upper bridge arm chips, on the first metal layer and the second metal layer respectively, and one end of a bottom area of the U shape is used for being connected with the upper bridge arm control electrode driving bus bar.
In the preferable technical scheme of the lining board for the power module, the lower bridge arm control electrode metal layer is in a U shape, two side areas of the U shape extend to the outer sides of the two upper parts of the Y shape respectively and are separated by the first metal layer and the second metal layer respectively, and one end of the bottom area of the U shape is used for being connected with the lower bridge arm control electrode driving busbar.
The lining plate for the power module can realize balance among manufacturability, reliability and electrical property on the premise of good electrical property. Specifically, when the lining plate is used for a power module, the control electrode driving element and the chip can be symmetrically arranged, namely the chip position consistency is high, the driving symmetry consistency is high, and thus the working consistency of each chip is high during working, thereby reducing the control electrode opening oscillation, reducing stray inductance and improving the working current balance. Meanwhile, the high-symmetry setting mode can reduce the process complexity to a certain extent, and improves the manufacturing manufacturability and reliability of the lining plate. And the on oscillation and stray inductance are reduced, the better current balance is achieved, the failure risk of the power module caused by chip overheating is reduced, and the reliability of the power module is further improved.
Further, through the arrangement mode that the two areas used for connecting the upper bridge arm driving element on the upper bridge arm control electrode metal layer are respectively located on the outer sides of the two areas used for connecting the upper bridge arm chip on the upper bridge arm input electrode metal layer, and the two areas used for connecting the lower bridge arm driving element on the lower bridge arm control electrode metal layer are respectively located on the outer sides of the two areas used for connecting the lower bridge arm chip on the lower bridge arm input electrode metal layer, the subsequent power module wire bonding process is more convenient, and the manufacturing manufacturability and the use reliability of the power module are improved.
The second aspect of the present application also provides a power module, including:
a backing plate for a power module according to any one of the first aspects;
the negative electrode busbar is connected to the direct-current negative electrode metal layer;
the positive electrode busbar is connected with the upper bridge arm input electrode metal layer;
the alternating current busbar is connected to the lower bridge arm input pole metal layer;
the upper bridge arm chips are symmetrically arranged in two areas used for connecting the upper bridge arm chips on the upper bridge arm input electrode metal layer, and the output electrode of each upper bridge arm chip is connected with the lower bridge arm input electrode metal layer through a first connecting piece;
The lower bridge arm chips are symmetrically arranged in two areas on the lower bridge arm input electrode metal layer and used for connecting the lower bridge arm chips, and the output electrode of each lower bridge arm chip is connected with the direct current negative electrode metal layer through a second connecting piece;
the upper bridge arm driving elements are in one-to-one correspondence with the upper bridge arm chips in number, and each upper bridge arm driving element is connected with a control electrode of each upper bridge arm chip through a third connecting piece;
the lower bridge arm driving elements are in one-to-one correspondence with the lower bridge arm chips in number, and each lower bridge arm driving element is connected with the control electrode of the lower bridge arm chip through a fourth connecting piece.
The power module provided by the application has the advantages of better manufacturing manufacturability, lower stray inductance, good current balance and stable reliability by adopting the lining plate, and realizes balance among manufacturability, reliability and electrical performance.
Scheme 1. A lining board for power module, its characterized in that includes insulating layer and is located etching layer of insulating layer one side, wherein the etching is formed with on the etching layer:
A direct current negative electrode metal layer;
the upper bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the upper bridge arm chip;
the lower bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the lower bridge arm chip;
the upper bridge arm control electrode metal layer is symmetrically arranged in two areas used for connecting the upper bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the upper bridge arm chip on the upper bridge arm input electrode metal layer;
and the lower bridge arm control electrode metal layer is symmetrically arranged on the two areas used for connecting the lower bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the lower bridge arm chip on the lower bridge arm input electrode metal layer.
The lining board for a power module according to the scheme 1 is characterized in that the upper bridge arm input pole metal layer comprises a first metal layer and a second metal layer, the first metal layer and the second metal layer extend from a first side edge of the etching layer to a second side edge opposite to the first side edge, and areas, used for being connected with an upper bridge arm chip, on the first metal layer and the second metal layer are located close to the second side edge.
The lining board for a power module according to the scheme 3 is characterized in that an upper bridge arm input pole test metal layer for connecting an upper bridge arm input pole test busbar is further etched on the etching layer, and the upper bridge arm input pole test metal layer is led out from one of the first metal layer and the second metal layer and extends to the second side edge.
The backing plate for a power module according to claim 2, wherein the first metal layer and the second metal layer are used to connect the positive electrode bus bar at an end region near the first side.
The lining board for a power module according to claim 2 is characterized in that a relay metal layer is further etched on the etching layer, and the relay metal layer is located in the lower bridge arm input electrode metal layer.
The lining board for the power module according to the scheme 2 is characterized in that the lower bridge arm input pole metal layer is Y-shaped and is partially positioned between the first metal layer and the second metal layer, two areas on the lower bridge arm input pole metal layer for connecting the lower bridge arm chip are respectively positioned at two parts on the upper part of the Y-shape, and the areas on the first metal layer and the second metal layer for connecting the upper bridge arm chip are respectively adjacent to two sides on the lower part of the Y-shape.
The lining board for a power module according to claim 6 is characterized in that the lower end portion of the Y-shape extends from between the first metal layer and the second metal layer and towards the direction of the first metal layer or the second metal layer, the lower end portion of the Y-shape is used for connecting an ac busbar, and the area extending from the lower end portion of the Y-shape is used for connecting an upper bridge arm output electrode busbar.
The lining board for a power module according to claim 6, wherein the first thermistor metal layer and the second thermistor metal layer are further etched and formed on the etching layer, and the first thermistor metal layer and the second thermistor metal layer are arranged side by side and are located on one side of the lower end of the Y-shape.
The lining board for the power module according to the scheme 9 is characterized in that the direct current negative electrode metal layer is of a T shape, two sides of the upper portion of the T shape are respectively adjacent to the first metal layer and the second metal layer, the lower portion of the T shape is inserted between the two Y-shaped upper portions of the lower bridge arm input electrode metal layer, and the upper portion of the T shape is used for being connected with a negative electrode busbar.
The lining board for a power module according to claim 9 is characterized in that a lower bridge arm output electrode metal layer for connecting with a lower bridge arm output electrode busbar is further etched on the etching layer, and the lower bridge arm output electrode metal layer extends from an upper corner of the T-shape to the second side along the edge of the etching layer.
The lining board for the power module according to the scheme 11 is characterized in that the metal layer of the upper bridge arm control electrode is in a U shape, two side areas of the U shape extend to the outer sides of areas, used for being connected with the upper bridge arm chips, of the first metal layer and the second metal layer respectively, and one end of the bottom area of the U shape is used for being connected with the upper bridge arm control electrode driving bus bar.
The lining board for a power module according to claim 6 is characterized in that the metal layer of the lower bridge arm control electrode is U-shaped, two side areas of the U-shape extend to the outer sides of the two upper parts of the Y-shape respectively, and are separated by the first metal layer and the second metal layer respectively, and one end of the bottom area of the U-shape is used for connecting the lower bridge arm control electrode driving bus.
A power module according to claim 13, comprising:
a backing plate for a power module according to any one of aspects 1 to 12;
the negative electrode busbar is connected to the direct-current negative electrode metal layer;
the positive electrode busbar is connected with the upper bridge arm input electrode metal layer;
the alternating current busbar is connected to the lower bridge arm input pole metal layer;
the upper bridge arm chips are symmetrically arranged in two areas used for connecting the upper bridge arm chips on the upper bridge arm input electrode metal layer, and the output electrode of each upper bridge arm chip is connected with the lower bridge arm input electrode metal layer through a first connecting piece;
The lower bridge arm chips are symmetrically arranged in two areas on the lower bridge arm input electrode metal layer and used for connecting the lower bridge arm chips, and the output electrode of each lower bridge arm chip is connected with the direct current negative electrode metal layer through a second connecting piece;
the upper bridge arm driving elements are in one-to-one correspondence with the upper bridge arm chips in number, and each upper bridge arm driving element is connected with a control electrode of each upper bridge arm chip through a third connecting piece;
the lower bridge arm driving elements are in one-to-one correspondence with the lower bridge arm chips in number, and each lower bridge arm driving element is connected with the control electrode of the lower bridge arm chip through a fourth connecting piece.
Drawings
The present application is described below with reference to the accompanying drawings. In the accompanying drawings:
FIG. 1 is a side view of a backing plate for a power module of the present application;
FIG. 2 is a front view of a backing plate for a power module of the present application;
FIG. 3 is a front view of a power module according to one embodiment of the present application;
fig. 4 is a front view of a power module according to another embodiment of the present application.
List of reference numerals
1. A lining plate; 11. an insulating layer; 12. etching the layer; 121. a direct current negative electrode metal layer; 1211. a lower bridge arm output electrode metal layer; 122. an upper bridge arm input electrode metal layer; 1221. a first metal layer; 1222. a second metal layer; 1223. testing the metal layer on the upper bridge arm input pole; 123. a lower bridge arm input electrode metal layer; 124. an upper bridge arm control electrode metal layer; 125. a lower bridge arm control electrode metal layer; 126. a relay metal layer; 127. a first thermistor metal layer; 128. a second thermistor metal layer; 13. a heat dissipation layer;
21. An upper bridge arm chip; 22. a lower bridge arm chip;
31. an upper arm drive element; 32. a lower arm drive element;
41. upper bridge arm input pole test busbar; 42. the upper bridge arm control electrode drives a busbar; 43. an upper bridge arm output electrode busbar; 44. the lower bridge arm control electrode drives a busbar; 45. a lower bridge arm output electrode busbar; 46. a first thermistor test bus; 47. a second thermistor test bus;
51. a negative electrode bus bar; 52. a positive bus bar; 53. an alternating current bus;
61. a first connector; 62. a second connector; 63. a third connecting member; 64. a fourth connecting member; 65. a relay connection;
7. an NTC thermistor.
Detailed Description
Preferred embodiments of the present application are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present application, and are not intended to limit the scope of the present application. For example, while the power modules in the figures are described in connection with having six upper bridge arm chips and six lower bridge arm chips, this number relationship is not constant and one skilled in the art can adapt it as desired to suit a particular application. For example, four, eight or ten equal numbers of upper bridge arm chips/lower bridge arm chips may also be provided in the power module.
It should be noted that, in the description of the present application, terms such as "medium," "upper," "lower," "left," "right," "vertical," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus are not to be construed as limiting the present application. Furthermore, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In addition, in the description of the present application, "a plurality" means at least two.
Furthermore, it should be noted that, in the description of the present application, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances.
Referring first to fig. 1 and 2, a description will be given of a backing plate for a power module of the present application. Wherein, FIG. 1 is a side view of a liner plate for a power module of the present application; fig. 2 is a front view of a backing plate for a power module according to the present application.
As shown in fig. 1 and 2, in order to solve the problem that the electrical performance of the product is reduced on the premise of ensuring manufacturability and product reliability of the existing power module, the lining board 1 for the power module of the present application includes an insulating layer 11 and an etching layer 12 located at one side of the insulating layer 11, wherein a direct current negative electrode metal layer 121, an upper bridge arm input electrode metal layer 122, a lower bridge arm input electrode metal layer 123, an upper bridge arm control electrode metal layer 124 and a lower bridge arm control electrode metal layer 125 are etched and formed on the etching layer 12. The two regions on the upper arm input pole metal layer 122 for connecting the upper arm chip 21 are symmetrically arranged, the two regions on the lower arm input pole metal layer 123 for connecting the lower arm chip 22 are symmetrically arranged, the two regions on the upper arm control pole metal layer 124 for connecting the upper arm driving element 31 are respectively located on the outer sides of the two regions on the upper arm input pole metal layer 122 for connecting the upper arm chip 21, the two regions on the upper arm control pole metal layer 124 for connecting the upper arm driving element 31 are symmetrically arranged, the two regions on the lower arm control pole metal layer 125 for connecting the lower arm driving element 32 are respectively located on the outer sides of the two regions on the lower arm input pole metal layer 123 for connecting the lower arm chip 22, and the two regions on the lower arm control pole metal layer 125 for connecting the lower arm driving element 32 are symmetrically arranged.
When the bridge is applied, the upper bridge arm chips 21 are symmetrically connected to the upper bridge arm metal layer, and the upper bridge arm chips 21 are connected with the lower bridge arm metal layer through connecting pieces. The lower bridge arm chip 22 is symmetrically connected to the lower bridge arm metal layer, and the lower bridge arm chip 22 is connected to the direct current negative electrode metal layer 121 through a connecting piece. The upper arm driving elements 31 are symmetrically disposed on the upper arm control electrode metal layer 124, and each upper arm driving element 31 is connected to one upper arm chip 21 through one connection piece. The lower leg driving elements 32 are symmetrically disposed on the lower leg control electrode metal layer 125, and each lower leg driving element 32 is connected to one upper leg chip 21 through one connection piece.
The lining board 1 for the power module can realize balance among manufacturability, reliability and electrical performance on the premise of having good electrical performance. Specifically, the two regions on the upper bridge arm input electrode metal layer 122 for connecting the upper bridge arm chip 21 are symmetrical, the two regions on the lower bridge arm metal layer for connecting the lower bridge arm chip 22 are symmetrical, the two regions on the upper bridge arm control electrode metal layer 124 for connecting the upper bridge arm driving element 31 are symmetrical, and the two regions on the lower bridge arm control electrode metal layer 125 for connecting the lower bridge arm driving element 32 are symmetrical, so that when the liner plate 1 is used for a power module, the control electrode driving element and the chip can be symmetrically arranged, that is, the chip position consistency is high, the driving symmetry consistency is high, and the working consistency of each chip is high during working, thereby reducing the control electrode opening oscillation, reducing the stray inductance and improving the working current balance. Meanwhile, the high-symmetry setting mode can reduce the process complexity to a certain extent, and improves the manufacturing manufacturability and reliability of the lining plate 1. And the on oscillation and stray inductance are reduced, the better current balance is achieved, the failure risk of the power module caused by chip overheating is reduced, and the reliability of the power module is further improved.
Further, by the arrangement mode that the two areas on the upper bridge arm control electrode metal layer 124 for connecting the upper bridge arm driving element 31 are respectively located on the outer sides of the two areas on the upper bridge arm input electrode metal layer 122 for connecting the upper bridge arm chip 21, and the two areas on the lower bridge arm control electrode metal layer 125 for connecting the lower bridge arm driving element 32 are respectively located on the outer sides of the two areas on the lower bridge arm input electrode metal layer 123 for connecting the lower bridge arm chip 22, the wire bonding process of the subsequent power module is more convenient, and the manufacturing manufacturability and the use reliability of the power module are improved.
A preferred embodiment of the present application will now be described with further reference to fig. 1 and 2.
As shown in fig. 1 and 2, in a preferred embodiment, the backing plate 1 for a power module includes an insulating layer 11, an etching layer 12 located on one side of the insulating layer 11, and a heat dissipation layer 13 located on the other side of the insulating layer 11. Preferably, the insulating layer 11 is a ceramic material, and the etching layer 12 and the heat dissipation layer 13 are copper layers. Of course, the specific materials of the theater layer, the etching layer 12, and the heat dissipation layer 13 are not exclusive, and can be adjusted by those skilled in the art. For example, the ceramic material may be selected from aluminum oxide, aluminum nitride, and silicon nitride, and one or both of the etching layer 12 and the heat dissipation layer 13 may be made of aluminum, silver, or the like.
Referring to fig. 2, the direct-current negative electrode metal layer 121, the lower arm output electrode metal layer 1211, the upper arm input electrode metal layer 122, the upper arm input electrode test metal layer 1223, the lower arm input electrode metal layer 123, the upper arm control electrode metal layer 124, the lower arm control electrode metal layer 125, the relay metal layer 126, the first thermistor metal layer 127, and the second thermistor metal layer 128 are etched on the etching layer 12 of the backing plate 1.
The upper arm input pole metal layer 122 includes a first metal layer 1221 and a second metal layer 1222, and the first metal layer 1221 and the second metal layer 1222 extend from a first side (an upper side in fig. 2) of the etching layer 12 to a second side (a lower side in fig. 2) opposite to the first side, respectively. The first metal layer 1221 and the second metal layer 1222 are used for connecting the positive electrode busbar 52 in the end region near the first side, the first metal layer 1221 and the second metal layer 1222 are symmetrical to each other in the strip region near the second side and are used for connecting the upper bridge arm chip 21, and the region used for connecting the positive electrode busbar 52 and the region used for connecting the upper bridge arm chip 21 are transited through the strip region. In addition, an upper arm input electrode test metal layer 1223 for connecting to the upper arm input electrode test bus 41 is further etched on the etching layer 12, and the upper arm input electrode test metal layer 1223 is led out from the lower portion of the strip-shaped region of the second metal layer 1222 and extends to the second side.
With continued reference to fig. 2, lower leg input pole metal layer 123 is wye-shaped and is partially located between first metal layer 1221 and second metal layer 1222. Specifically, the Y-shape extends in the direction from the first side to the second side, wherein two portions of the upper part of the Y-shape are used for connecting the lower bridge arm chip 22, the two regions are substantially rectangular and symmetrically arranged with each other, and the two portions of the upper part of the Y-shape are adjacent to the transition region of the first metal layer 1221 and the second metal layer 1222, and the two portions of the upper part of the Y-shape vertically correspond to the regions of the first metal layer 1221 and the second metal layer 1222 for connecting the upper bridge arm chip 21. The lower part of the Y-shape is located between the areas for connecting the upper arm chip 21 on the first metal layer 1221 and the second metal layer 1222, and the lower end part of the Y-shape extends from between the first metal layer 1221 and the associated second metal layer 1222 and extends toward the second metal layer 1222. The portion of the Y-shaped lower end extending out is used to connect the ac bus bar 53, and the region of the Y-shaped lower end extending to the second metal layer 1222 is used to connect the upper arm output electrode bus bar 43.
In addition, a relay metal layer 126 is etched and formed on the etching layer 12, and the relay metal layer 126 is located in the lower arm input electrode metal layer 123 and is located in the substantially middle of the Y-shape.
Referring still to fig. 2, the dc negative electrode metal layer 121 is T-shaped, and two sides of an upper transverse area of the T-shape are respectively adjacent to the areas for connecting the positive electrode bus bar 52 on the first metal layer 1221 and the second metal layer 1222, and a lower vertical area of the T-shape is inserted between two upper parts of the Y-shape of the lower bridge arm input electrode metal layer 123, and an upper part of the T-shape is used for connecting the negative electrode bus bar 51. A lower arm output electrode metal layer 1211 for connecting to the lower arm output electrode bus bar 45 is further etched on the etching layer 12, and the lower arm output electrode metal layer 1211 extends from the upper left upper side corner of the T-shape to the second side along the edge of the etching layer 12.
The upper arm control electrode metal layer 124 is substantially U-shaped, and two side regions of the U-shape extend to the outside of the region for connecting the upper arm chip 21 on the first metal layer 1221 and the second metal layer 1222, respectively, and are disposed adjacent to the two regions, respectively, and regions for connecting the upper arm driving element 31 in the two side regions are disposed symmetrically to each other (two dotted line regions located in the upper arm control electrode metal layer 124 in fig. 2). The U-shaped bottom section has a slightly wider end (right end in FIG. 2) for connection to upper arm gate drive buss 42. Similarly, the lower arm control electrode metal layer 125 is also U-shaped, and two side regions of the U-shape extend to the outer sides of the two upper portions of the Y-shape and are separated by the transition regions of the first metal layer 1221 and the second metal layer 1222, respectively, and regions for connecting the lower arm driving element 32 in the two side regions are symmetrically arranged (two dotted line regions in the lower arm control electrode metal layer 125 in fig. 2). The bottom region of the U has a slightly wider end (left end in FIG. 2) for connection to the lower arm gate drive bus 44.
The first thermistor metal layer 127 and the second thermistor metal layer 128 are rectangular, are arranged side by side and are located at one side of the lower end of the Y-shape, and are located at the left side of the lower end of the Y-shape in the application, namely, the opposite side of the area formed by extending the bottom end of the Y-shape and used for connecting the upper bridge arm output electrode bus bar 43.
As can be seen from the above description and the accompanying drawings, in the layout manner of the lining board 1, each metal layer has a regular shape, and the structure between the metal layers is compact, so that the etching amount of the metal layer of the lining board 1 is small, the warping of the lining board 1 is small, and the difficulty of the subsequent manufacturing process (printing, pasting, welding, etc.) can be reduced. Through the higher symmetry of each metal layer in the etching process of the lining plate 1, the symmetry of the connection position and the working consistency of the subsequent power modules can be improved, so that the occurrence of the turn-on oscillation of the control electrode is avoided, the electrical performance is improved, the stray inductance of the power modules is reduced, and the current balance of the modules during working is improved. Meanwhile, the better current balance reduces the failure risk of the power module caused by chip overheating. The reduced warpage of the backing plate 1, a compact and stable manufacturing process, less risk of failure, good electrical and thermal properties, all of which can improve the reliability of the power module. Finally, the balance of manufacturing manufacturability, reliability and electrical performance is achieved.
In addition, the areas of the connecting buses are all arranged on the first side edge and the second side edge, so that the power module is convenient to manufacture, and manufacturability is simplified. The provision of the relay metal layer 126 is advantageous for improving the current uniformity between the upper leg input pole metal layers 122.
Of course, the above-mentioned scheme is only a preferred embodiment, and those skilled in the art can adjust the layout of the lining board 1 according to the specific application scenario without departing from the principles of the present application.
For example, the specific layout of the upper arm input pole metal layer 122 can be adjusted by those skilled in the art on the basis of ensuring that the two regions on the upper arm input pole metal layer 122 for connecting the upper arm chip 21 are symmetrically arranged. For example, the first metal layer 1221 and the second metal layer 1222 may be combined into one; or leading out the upper bridge arm input electrode test metal layer 1223 from the first metal layer 1221; or the positions and shapes of the regions for connecting the upper arm chip 21, the regions for connecting the positive electrode bus bar 52, and the like on the first metal layer 1221 and the second metal layer 1222 are changed.
For another example, on the basis of ensuring that two areas on the lower bridge arm input pole metal layer 123 for connecting the lower bridge arm chip 22 are symmetrically arranged, a specific layout manner of the lower bridge arm input pole metal layer 123 can be adjusted by a person skilled in the art. For example, changing the shape of lower leg input pole metal layer 123 to a T-shape or other shape; or the top of the Y-shape extends out of the first 1221 and second 1222 metal layers; or the bottom of the Y-shape extends in the direction of the first metal layer 1221, etc.
For another example, the setting of the relay metal layer 126 is not necessary, and one skilled in the art can select whether to set the relay metal layer 126 based on a specific application scenario.
For another example, the arrangement and number of the first and second thermistor metal layers 127, 128 are not necessary, and one skilled in the art can vary the positions, numbers, shapes, etc. of the two while satisfying the design requirements of the power module.
For another example, the shape of the upper arm control electrode metal layer 124 is not constant, and on the premise of satisfying the symmetry of the area on the upper arm control electrode metal layer 124 for connecting the upper arm driving element 31, those skilled in the art may change the shape and the position thereof, for example, the shape may be modified to n-type, and the position may be located outside the lower arm control electrode metal layer 125, and the like.
For another example, the shape of the lower arm control electrode metal layer 125 is not uniform, and on the premise of satisfying the symmetry of the area on the lower arm control electrode metal layer 125 for connecting the lower arm driving element 32, those skilled in the art may change the shape and the position thereof, for example, the shape may be modified to n-type, the position thereof may be located between the upper arm input electrode metal layer 122 and the lower arm input electrode metal layer 123, and the like.
For another example, the upper arm input electrode test metal layer 1223 is not necessarily disposed, and a person skilled in the art may choose whether to dispose or not based on design requirements, and the disposed position of the upper arm input electrode test metal layer 1223 may be adjusted, for example, may not be disposed, may be led out from the first metal layer 1221, or led out to the first side, etc.
For another example, the lower bridge arm output pole metal layer 1211 is not necessarily disposed, and one skilled in the art may arbitrarily select the location and form of the arrangement. For example, a certain region in the T-shaped upper portion of the dc negative electrode metal layer 121 may be used as the lower arm output electrode metal layer 1211, or the lower arm output electrode metal layer 1211 may be led out to the other side or the like.
The power module of the present application will be described with reference to fig. 3 and 4. Wherein, fig. 3 is a front view of a power module according to an embodiment of the application; fig. 4 is a front view of a power module according to another embodiment of the present application.
Referring first to fig. 3, the present application also provides a power module including the lining board 1 for a power module in the above example, and the negative electrode bus bar 51, the positive electrode bus bar 52, the ac bus bar 53, the upper arm chip 21, the lower arm chip 22, the upper arm driving element 31, and the lower arm driving element 32.
The negative electrode bus 51 is connected to the dc negative electrode metal layer 121, the positive electrode bus 52 is connected to the upper arm input electrode metal layer 122, and the ac bus 53 is connected to the lower arm input electrode metal layer 123. The upper bridge arm chips 21 are provided in plurality, the plurality of upper bridge arm chips 21 are symmetrically arranged on the upper bridge arm input pole metal layer 122 and used for being connected with the two areas of the upper bridge arm chips 21, and the output pole of each upper bridge arm chip 21 is connected with the lower bridge arm input pole metal layer 123 through the first connecting piece 61. The lower bridge arm chips 22 are provided in plurality, the plurality of lower bridge arm chips 22 are symmetrically arranged on the lower bridge arm input pole metal layer 123 and used for being connected with the two areas of the lower bridge arm chips 22, and the output pole of each lower bridge arm chip 22 is connected with the direct current negative pole metal layer 121 through the second connecting piece 62. The number of the upper arm driving elements 31 is one-to-one corresponding to the number of the upper arm chips 21, and each upper arm driving element 31 is connected to the control electrode of the upper arm chip 21 through a third connection member 63. The number of the lower arm driving elements 32 is one-to-one corresponding to the number of the lower arm chips 22, and each lower arm driving element 32 is connected to the control electrode of the lower arm chip 22 through a fourth connection 64.
The power module provided by the application has the advantages of better manufacturing manufacturability, lower stray inductance, good current balance and stable reliability by adopting the lining plate 1, and realizes balance among manufacturability, reliability and electrical performance.
Referring further to fig. 3, in one embodiment, six upper arm chips 21, six lower arm chips 22, six upper arm driving elements 31, six lower arm driving elements 32, one NTC thermistor 7 (negative temperature coefficient thermistor), an upper arm input pole test bus 41, an upper arm control pole drive bus 42, an upper arm output pole bus 43, a lower arm control pole drive bus 44, a lower arm output pole bus 45, a first thermistor test bus 46 and a second thermistor test bus, a negative electrode bus 51, a positive electrode bus 52 and an ac bus 53 are connected to the backing board 1 of the power module.
In an example, the upper bridge arm chip 21 and the lower bridge arm chip 22 are silicon carbide chips adopting a MOSFET architecture, and at this time, the input pole, the output pole and the control pole of the upper bridge arm chip 21 and the lower bridge arm chip 2 respectively correspond to the drain pole, the source pole and the gate pole of the silicon carbide chips. The drains of the upper bridge arm chips 21 are connected with the upper bridge arm input electrode metal layer 122 through a sintering or welding process, wherein the first metal layer 1221 and the second metal layer 1222 are respectively connected with three upper bridge arm chips 21, the three upper bridge arm chips 21 located on the same metal layer are vertically arranged, and the six upper bridge arm chips 21 after connection are symmetrical in pairs. The source electrode of the upper bridge arm chip 21 is connected with the lower bridge arm input electrode metal layer 123 through a plurality of first connecting pieces 61, and binding wires are selected as the first connecting pieces 61, and the material of the binding wires is aluminum or copper. Wherein the number and positions of the first connection pieces 61 to which each upper bridge arm chip 21 is connected remain as the same as possible. Furthermore, the kelvin source of the upper arm chip 21 is not connected to any place.
The upper bridge arm driving elements 31 are resistors, and the resistors are connected with the upper bridge arm control electrode metal layer 124 through a sintering or welding process, wherein three upper bridge arm driving elements 31 positioned on the same side are vertically arranged, and the six upper bridge arm driving elements 31 are symmetrical in pairs after connection. Each upper bridge arm driving element 31 is connected with the gate electrode of one upper bridge arm chip 21 through a third connecting piece 63, wherein the third connecting piece 63 is a binding wire, the material of the third connecting piece is aluminum wire or copper wire, and after the connection is finished, six binding wires are symmetrical in pairs.
The drain electrode of the lower bridge arm chip 22 is connected with the lower bridge arm input electrode metal layer 123 through a sintering or welding process, wherein the two parts of the Y-shaped upper part of the lower bridge arm input electrode metal layer 123 are respectively connected with the three lower bridge arm chips 22, the three lower bridge arm chips 22 positioned on the same part are vertically arranged, the three lower bridge arm chips 22 on each side are positioned on the same straight line with the upper bridge arm chip 21 on the same side, and the six lower bridge arm chips 22 are connected in a pairwise symmetrical manner. The source electrode of the lower bridge arm chip 22 is connected with the direct current negative electrode metal layer 121 through a plurality of second connecting pieces 62, and the second connecting pieces 62 are binding wires, and are made of aluminum or copper. Wherein the number and location of second connectors 62 to which each lower bridge arm chip 22 is connected remains as the same as possible. Furthermore, the kelvin source of the lower arm chip 22 is not connected to any place.
The lower bridge arm driving elements 32 are resistors, and the resistors are connected with the lower bridge arm control electrode metal layer 125 through a sintering or welding process, wherein three lower bridge arm driving elements 32 positioned on the same side are vertically arranged, and the six lower bridge arm driving elements 32 are symmetrical in pairs after connection. Each lower bridge arm driving element 32 is connected to the gate electrode of one lower bridge arm chip 22 through a fourth connecting piece 64, wherein the fourth connecting piece 64 is a binding wire, and the fourth connecting piece is made of aluminum wires or copper wires, and after the connection, six binding wires are symmetrical in pairs.
The relay metal layer 126 is connected to the first metal layer 1221 and the second metal layer 1222 through the relay connector 65, wherein the relay connector 65 is a copper wire or an aluminum wire.
The positive electrode busses 52 are provided in two, and the two positive electrode busses 52 are connected to the upper portions of the first and second metal layers 1221 and 1222, respectively, by welding, sintering, or ultrasonic welding processes. The negative electrode bus bar 51 is connected to the T-shaped upper portion of the dc negative electrode metal layer 121 through a welding, sintering or ultrasonic welding process. The ac busbar 53 is connected to the middle of the Y-shaped lower end of the lower arm input electrode metal layer 123 by a welding, sintering or ultrasonic welding process, and the upper arm output electrode busbar 43 is connected to the Y-shaped lower end extension region of the lower arm input electrode metal layer 123 by a welding, sintering or ultrasonic welding process. The upper leg input pole test buss 41 is connected to the upper leg input pole test metal layer 1223 by a welding, sintering, or ultrasonic welding process. The upper leg control electrode drive bus 42 is connected to the right end of the U-shaped lower side of the upper leg control electrode metal layer 124 by a welding, sintering or ultrasonic welding process. The lower leg electrode drive buss bar 44 is connected to the left end of the U-shaped lower side of the lower leg electrode metal layer 125 by a welding, sintering or ultrasonic welding process. The lower leg output pole buss bar 45 is connected to the lower leg output pole metal layer 1211 by a welding, sintering, or ultrasonic welding process. The NTC thermistor 7 is connected to the first thermistor metal layer 127 through a welding or sintering process, and the first and second thermistor test buses 46 and 47 are connected to the first and second thermistor metal layers 127 and 128, respectively, through a welding or sintering process. Preferably, the bus bars are copper bars.
Referring to fig. 4, in an alternative embodiment, the first connecting member 61 and the second connecting member 62 are replaced by a binding wire with a metal sheet, which is a copper sheet or an aluminum sheet, without changing other arrangements.
According to the arrangement mode, the six chips on each bridge arm are symmetrically arranged, the chips on different bridge arms are vertically corresponding, and the connection positions of the chips are uniformly arranged, so that the current balance and the current uniformity of each chip can be improved when the module works, the failure risk of the module is reduced, and the reliability of the module can be improved while the electrical performance is ensured. The connection mode of the upper bridge arm chip 21 and the lower bridge arm chip 22 eliminates the Kelvin source electrode, reduces wire bonding, simplifies the manufacturing process, reduces the failure risk of the module by fewer wire bonding points, and improves the reliability of the module. The inventor researches find that in the power module manufactured by adopting the lining plate 1, the six-chip power module can achieve the current capacity of the existing eight chips, can meet higher current requirements and improves the current capacity of the module.
Of course, the above-described fig. 3 and 4 illustrate only a preferred embodiment, and those skilled in the art can adjust the power module of the present application. For example, the upper bridge arm chip 21 and the lower bridge arm chip 22 may also be chips with built-in gate resistors, so that the layout size of the power module may be further reduced, thereby improving the power density of the product. For another example, although the above embodiment is described with reference to the NTC thermistor 7, in other embodiments, a PTC thermistor (positive temperature coefficient thermistor) may be used depending on the specific design requirements. For another example, one or more of the above-described bus bars may be replaced with other materials such as aluminum. For another example, the upper arm chip 21 and the lower arm chip 22 may be replaced by other possible semiconductor chips such as gallium nitride, in addition to silicon carbide chips. Furthermore, while the upper leg chip 21 and the lower leg chip 22 are described above as being exemplified in connection with MOSFET architectures, this is not intended to limit the types of application of both, and one skilled in the art may change the specific architecture type of the upper leg chip 21 and/or the lower leg chip 22, such as IGBT, diode, BJT architectures, etc. Of course, the specific names of the input, output and control electrodes of the chip will also vary when the architecture is different. For example, for a chip of an IGBT architecture, its input, output and control poles correspond to the collector, emitter and gate of the chip, respectively.
Those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims of the present application, any of the claimed embodiments may be used in any combination.
Thus far, the technical solution of the present application has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present application is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present application, and such modifications and substitutions will fall within the scope of the present application.
Claims (10)
1. The lining board for the power module is characterized by comprising an insulating layer and an etching layer positioned on one side of the insulating layer, wherein the etching layer is etched and formed with:
a direct current negative electrode metal layer;
the upper bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the upper bridge arm chip;
The lower bridge arm input electrode metal layer is symmetrically arranged in two areas for connecting the lower bridge arm chip;
the upper bridge arm control electrode metal layer is symmetrically arranged in two areas used for connecting the upper bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the upper bridge arm chip on the upper bridge arm input electrode metal layer;
and the lower bridge arm control electrode metal layer is symmetrically arranged on the two areas used for connecting the lower bridge arm driving element and is respectively positioned on the outer sides of the two areas used for connecting the lower bridge arm chip on the lower bridge arm input electrode metal layer.
2. The board for power module according to claim 1, wherein the upper arm input electrode metal layer includes a first metal layer and a second metal layer, the first metal layer and the second metal layer extend from a first side of the etching layer to a second side opposite to the first side, and regions of the first metal layer and the second metal layer for connecting an upper arm chip are located near the second side.
3. The board for a power module according to claim 2, wherein an upper arm input electrode test metal layer for connecting to an upper arm input electrode test busbar is further etched on the etching layer, and the upper arm input electrode test metal layer is led out from one of the first metal layer and the second metal layer and extends to the second side.
4. The backing plate for a power module of claim 2, wherein the first metal layer and the second metal layer are used to connect positive electrode busses at end regions proximate the first side.
5. The board for a power module according to claim 2, wherein a relay metal layer is further etched and formed on the etching layer, and the relay metal layer is located in the lower arm input electrode metal layer.
6. The liner plate for a power module according to claim 2, wherein the lower arm input electrode metal layer is in a Y shape and is partially located between the first metal layer and the second metal layer, two areas on the lower arm input electrode metal layer for connecting a lower arm chip are respectively located at two upper parts of the Y shape, and areas on the first metal layer and the second metal layer for connecting an upper arm chip are respectively adjacent to two sides of the lower part of the Y shape.
7. The board for power module according to claim 6, wherein the Y-shaped lower end portion extends from between the first metal layer and the second metal layer in a direction toward the first metal layer or the second metal layer, the Y-shaped lower end portion is used for connecting an ac busbar, and the region from which the Y-shaped lower end portion extends is used for connecting an upper arm output pole busbar.
8. The board for a power module according to claim 6, wherein the etching layer is further etched with a first thermistor metal layer and a second thermistor metal layer, and the first thermistor metal layer and the second thermistor metal layer are arranged side by side and are located on the lower end side of the Y-shape.
9. The backing plate for a power module according to claim 6, wherein the direct current negative electrode metal layer is T-shaped, two sides of an upper portion of the T-shape are adjacent to the first metal layer and the second metal layer, respectively, a lower portion of the T-shape is inserted between two portions of a Y-shaped upper portion of the lower bridge arm input electrode metal layer, and the upper portion of the T-shape is used for connecting a negative electrode bus bar.
10. The board for a power module according to claim 9, wherein a lower arm output electrode metal layer for connecting with a lower arm output electrode bus is further etched on the etching layer, and the lower arm output electrode metal layer extends from an upper corner of the T-shape to the second side along an edge of the etching layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310929404.8A CN116825748A (en) | 2023-07-25 | 2023-07-25 | Lining plate for power module and power module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310929404.8A CN116825748A (en) | 2023-07-25 | 2023-07-25 | Lining plate for power module and power module |
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| CN116825748A true CN116825748A (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310929404.8A Pending CN116825748A (en) | 2023-07-25 | 2023-07-25 | Lining plate for power module and power module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276226A (en) * | 2023-11-01 | 2023-12-22 | 深圳基本半导体有限公司 | Power module, packaging structure and electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117276226A (en) * | 2023-11-01 | 2023-12-22 | 深圳基本半导体有限公司 | Power module, packaging structure and electronic equipment |
| CN117276226B (en) * | 2023-11-01 | 2024-04-16 | 深圳基本半导体有限公司 | Power module, packaging structure and electronic equipment |
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