CN116814342A - Environment-friendly cleaning agent for semiconductor chip and preparation method and application thereof - Google Patents
Environment-friendly cleaning agent for semiconductor chip and preparation method and application thereof Download PDFInfo
- Publication number
- CN116814342A CN116814342A CN202310805077.5A CN202310805077A CN116814342A CN 116814342 A CN116814342 A CN 116814342A CN 202310805077 A CN202310805077 A CN 202310805077A CN 116814342 A CN116814342 A CN 116814342A
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- environment
- semiconductor chip
- cleaning agent
- agent
- friendly cleaning
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 194
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 148
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 74
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000008367 deionised water Substances 0.000 claims abstract description 27
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 27
- 239000002270 dispersing agent Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000004094 surface-active agent Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 17
- 150000001412 amines Chemical class 0.000 claims abstract description 16
- 239000003960 organic solvent Substances 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000003223 protective agent Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 230000007613 environmental effect Effects 0.000 claims description 23
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical group CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 21
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 15
- 229930182478 glucoside Natural products 0.000 claims description 12
- 150000008131 glucosides Chemical class 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 11
- 239000004744 fabric Substances 0.000 claims description 10
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 10
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 10
- -1 dodecyl propyl Chemical group 0.000 claims description 9
- RKISUIUJZGSLEV-UHFFFAOYSA-N n-[2-(octadecanoylamino)ethyl]octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCNC(=O)CCCCCCCCCCCCCCCCC RKISUIUJZGSLEV-UHFFFAOYSA-N 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- SLBXZQMMERXQAL-UHFFFAOYSA-M sodium;1-dodecoxy-4-hydroxy-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].CCCCCCCCCCCCOC(=O)C(S(O)(=O)=O)CC([O-])=O SLBXZQMMERXQAL-UHFFFAOYSA-M 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- FQHUDZKKDCTQET-UHFFFAOYSA-N 2-undecyl-4,5-dihydro-1h-imidazole Chemical compound CCCCCCCCCCCC1=NCCN1 FQHUDZKKDCTQET-UHFFFAOYSA-N 0.000 claims description 6
- 229940080421 coco glucoside Drugs 0.000 claims description 6
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 6
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 5
- YZYASTRURKBPPS-UHFFFAOYSA-N C(CCC(=O)OCCCCCC(C)C)(=O)OCCCCCC(C)C.[Na] Chemical compound C(CCC(=O)OCCCCCC(C)C)(=O)OCCCCCC(C)C.[Na] YZYASTRURKBPPS-UHFFFAOYSA-N 0.000 claims description 5
- JBIROUFYLSSYDX-UHFFFAOYSA-M benzododecinium chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 JBIROUFYLSSYDX-UHFFFAOYSA-M 0.000 claims description 5
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- WEZAHYDFZNTGKE-UHFFFAOYSA-N 3-ethoxyaniline Chemical compound CCOC1=CC=CC(N)=C1 WEZAHYDFZNTGKE-UHFFFAOYSA-N 0.000 claims description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229960003237 betaine Drugs 0.000 claims description 4
- 150000002191 fatty alcohols Chemical class 0.000 claims description 4
- YIKWKLYQRFRGPM-UHFFFAOYSA-N 1-dodecylguanidine acetate Chemical compound CC(O)=O.CCCCCCCCCCCCN=C(N)N YIKWKLYQRFRGPM-UHFFFAOYSA-N 0.000 claims description 3
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 3
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 3
- LOBXNKKFDKXXQW-UHFFFAOYSA-M sodium;3-[dodecanoyl(methyl)amino]propanoate Chemical compound [Na+].CCCCCCCCCCCC(=O)N(C)CCC([O-])=O LOBXNKKFDKXXQW-UHFFFAOYSA-M 0.000 claims description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 3
- 125000005270 trialkylamine group Chemical group 0.000 claims description 3
- PYIDGJJWBIBVIA-UYTYNIKBSA-N lauryl glucoside Chemical compound CCCCCCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O PYIDGJJWBIBVIA-UYTYNIKBSA-N 0.000 claims description 2
- 229940048848 lauryl glucoside Drugs 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000002923 metal particle Substances 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 49
- 238000011056 performance test Methods 0.000 description 31
- 238000012360 testing method Methods 0.000 description 21
- 239000001993 wax Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 10
- 239000003344 environmental pollutant Substances 0.000 description 9
- 231100000719 pollutant Toxicity 0.000 description 9
- 239000002904 solvent Substances 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000003912 environmental pollution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- ZWRDBWDXRLPESY-UHFFFAOYSA-N n-benzyl-n-ethylethanamine Chemical compound CCN(CC)CC1=CC=CC=C1 ZWRDBWDXRLPESY-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MQKXWEJVDDRQKK-UHFFFAOYSA-N bis(6-methylheptyl) butanedioate Chemical compound CC(C)CCCCCOC(=O)CCC(=O)OCCCCCC(C)C MQKXWEJVDDRQKK-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012851 eutrophication Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/662—Carbohydrates or derivatives
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/825—Mixtures of compounds all of which are non-ionic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2093—Esters; Carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/38—Products with no well-defined composition, e.g. natural products
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Molecular Biology (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses an environment-friendly cleaning agent for a semiconductor chip, a preparation method and application thereof, and relates to the technical fields of printed circuit board production and semiconductor chip cleaning. The environment-friendly cleaning agent consists of the following components in mass concentration: 2-15g/L of softening material, 5-20g/L of accelerator, 0.2-2g/L of dispersing agent, 5-15g/L of penetrating agent, 0.02-0.1g/L of metal protecting agent, 5-20g/L of stripping agent and the balance of deionized water; the mass ratio of the accelerator to the dispersant is 1: (0.02-0.3); the stripping agent is a mixture of alcohol ether, organic amine, surfactant and organic solvent. The environment-friendly cleaning agent provided by the invention can be used for rapidly cleaning and removing greasy dirt, oxide, metal particles, photoresist and wax residues on the surface of a semiconductor chip, so that the cleaning time is shortened, and the economic benefit and the quality yield are improved.
Description
Technical Field
The invention relates to the technical field of printed circuit board production and semiconductor chip cleaning, in particular to an environment-friendly cleaning agent for a semiconductor chip, and a preparation method and application thereof.
Background
With the rapid development of the electronic information industry, in the production of integrated circuits, the production of semiconductor chips is becoming particularly important, and the quality of the semiconductor chips directly affects the quality of the integrated circuits. In each process of producing semiconductor chips, the circuit functions are easily damaged due to the pollution of dust particles and metals in the semiconductor chips, short circuits or open circuits are generated, and the integrated circuits are invalid and geometric characteristics are generated, so that the semiconductor chip cleaning process is a very important ring, and the main cleaning function is to remove fine particle pollutants, metal particles, organic matters, greasy dirt, wax, photoresist residues and the like remained in the previous process of the semiconductor chip materials. The cleaning solution can not corrode and damage a wire on a metal element on the semiconductor chip while ensuring that the substances can be removed quickly and effectively in the cleaning process, and the surface of the semiconductor chip after cleaning can meet the technical requirements of no corrosion, no oxidation, bright surface, no residue and the like. Meanwhile, the cleaning agent cannot contain toxic and harmful components, and the waste liquid is easy to treat, so that the generation of harmful gas can be effectively reduced, and the environmental pollution is avoided.
The existing semiconductor chip cleaning agent often selects hydrochloric acid, nitric acid, strong alkali liquor or surfactant containing phosphate as the cleaning agent. However, hydrochloric acid and nitric acid are corrosive, particulate matters and organic components cannot be removed, the overall removal effect of the strong alkali liquid cleaning agent is not ideal, and the cleaning agent containing phosphate surfactant cannot remove photoresist and residues thereof although the cleaning effect is good, and simultaneously pollutes the environment, so that the problems of water resource eutrophication, water body pollution and the like are easily caused.
The prior art always has the technical effects that the technology is single, the surface of a semiconductor chip can not be cleaned, residues such as wax, photoresist and the like can be removed, and meanwhile, the solution is environment-friendly, nontoxic and harmless, for example:
1) Chinese patent CN109679790a discloses a solvent-type cleaning agent based on hydrocarbon solvents: the wax is well dissolved, but the residual cleaning agent is required to be cleaned with acetone in the use process of removing the wax; the acetone has low boiling point, is volatile, has high use consumption, is not friendly to the environment during waste liquid treatment, and can cause certain hidden trouble to the environment of workshops and the health of operators.
2) Chinese patent CN105542990a discloses a water-based ed chip cleaning agent, which has high cleaning efficiency and strong detergency; the safety performance is good, and the environment is not polluted; energy is saved, and the washing cost is low; the cleaning process can form a protective film on the surface of the chip to isolate air, prevent water and other molecules in the atmosphere from corroding the chip and resist oxidation, but can not effectively remove residues such as wax, photoresist and the like.
Therefore, it is needed to provide an environment-friendly cleaning agent for semiconductor chips, and a preparation method and application thereof, so as to solve the problems of strong corrosiveness, poor cleaning effect, poor stripping effect on wax and photoresist, serious environmental pollution and the like of the existing cleaning agents for semiconductor chips. The cleaning agent for the semiconductor chip can effectively and rapidly remove any residual substances on the surface of the semiconductor without using equipment such as ultrasonic waves, and has the positive significance of environmental protection, low production cost and sustainable development.
Disclosure of Invention
In order to solve the technical problems, the invention provides an environment-friendly cleaning agent for a semiconductor chip, and a preparation method and application thereof. The environment-friendly cleaning agent can clean the surface efficiently and rapidly under the pure soaking condition, remove any residual substances such as wax, photoresist and the like, has short cleaning time, can not corrode and attack metal elements, has bright and non-oxidized surface, has the cleaning rate of more than 99.8 percent, and improves the quality yield. Meanwhile, the method has the positive significance of green environmental protection, low production cost and sustainable development. The method specifically comprises the following technical scheme:
in a first aspect, an environment-friendly cleaning agent for semiconductor chips is provided, which comprises the following components in mass concentration:
the balance of deionized water;
the mass ratio of the accelerator to the dispersant is 1: (0.02-0.3);
the accelerator is at least one selected from propylene glycol methyl ether acetate, vinyl trimethyl silane and dodecyl guanidine acetate;
the dispersing agent is at least one of sodium humate, sodium hexametaphosphate and sodium tripolyphosphate:
the stripping agent is a mixture of alcohol ether, organic amine, surfactant and organic solvent, and the mass ratio of the alcohol ether to the organic amine to the surfactant to the organic solvent is 1: (0.05-0.3): (0.06-0.25): (1-6);
the alcohol ether is at least one selected from propylene glycol methyl ether acetate, fatty alcohol polyoxyethylene ether and glycerol polyoxyethylene ether; the organic amine is at least one selected from N, N-diethyl ethanolamine, m-ethoxyaniline and ethylene bis-stearamide; the surfactant is at least one selected from coco glucoside, lauryl glucoside and cetostearyl glucoside; the organic solvent is N, N-diethyl formamide (DEF solvent).
Further, the softening material is at least one selected from dodecyl propyl betaine, N, N-diethyl benzyl amine, dodecyl dimethyl benzyl ammonium chloride and trialkyl amine; the penetrating agent is at least one selected from sodium sulfosuccinate monolauryl ester, sodium diisooctyl succinate and sodium diisooctyl succinate; the metal protective agent is at least one selected from 2-undecyl imidazoline, sodium 2-heptadecenyl-1-aminoethyl imidazoline chloride, sodium lauroyl methylaminopropionate and amidimidazole.
Further, the mass ratio concentration of the accelerator to the dispersant is 1: (0.02-0.25).
Furthermore, the environment-friendly cleaning agent for the semiconductor chip consists of the following components in percentage by mass:
the balance of deionized water.
Furthermore, the environment-friendly cleaning agent for the semiconductor chip consists of the following components in percentage by mass:
the balance of deionized water.
In a second aspect, there is provided a method for preparing the environment-friendly cleaning agent for semiconductor chips according to the first aspect, comprising the steps of:
and mixing the stripping agent, the softening material, the accelerator, the dispersing agent, the penetrating agent, the metal protecting agent and the deionized water, and stirring for 1-2 hours under the conditions that the water bath temperature is 50-60 ℃ and the rotating speed is 1000-2000r/min to obtain the environment-friendly cleaning agent for the semiconductor chip.
Further, the stripping agent is prepared by mixing and stirring alcohol ether, organic amine, surfactant and organic solvent for 10-30 min.
In a third aspect, a method for cleaning a semiconductor chip is provided, where the cleaning agent for semiconductor chip according to the first aspect is used for cleaning a semiconductor chip.
Further, the cleaning of the semiconductor chip includes the following steps:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 8-20% for a semiconductor chip, soaking the semiconductor chip in the environment-friendly cleaning agent solution at the temperature of 35-40 ℃ for cleaning, and taking out the semiconductor chip after cleaning for 5-10 min;
s2, washing the semiconductor chip with deionized water at the temperature of 60-80 ℃ for 2-3 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Further, in step S1, the environmental protection cleaning agent solution contains environmental protection cleaning agent for semiconductor chip with mass concentration of 10-12%.
The invention has the beneficial effects that:
(1) The stripping agent, softening material, accelerator, dispersant, penetrant and metal protecting agent in the environment protecting detergent for semiconductor chip have hydrophobic group interaction to soften wax, photoresist and other pollutant and excellent surface tension and penetrating capacity during cleaning, and may be used in replacing or soaking the interface between pollutant and chip fast in normal temperature water solution to ensure the stripping of pollutant from the surface of semiconductor chip electrode element in short cleaning time. Meanwhile, the pollutant clusters can be wrapped through intermolecular chemical action with pollutants, so that the hydrophobicity of the stripped pollutants in water is guaranteed, the pollutants can be rapidly dispersed and suspended, and the pollutants are not easy to be re-adhered to the electrode element of the semiconductor chip, so that the surface of the semiconductor chip is not easy to suffer from secondary pollution.
(2) The organic solvent in the stripping agent uses N, N-diethyl formamide (DEF solvent) to replace N-methyl pyrrolidone (NMP solvent) and N, N-dimethyl formamide (DMF solvent), so that the generation of harmful gas can be effectively reduced, and the environmental pollution is avoided.
(3) At the solution temperature of 35-40 ℃, ultrasonic equipment and other equipment are not used, the surface of the semiconductor chip can be completely cleaned after soaking for 5-10mi by pure soaking, and the intractable residual substances such as greasy dirt, oxides, fine metal particles, wax, photoresist and the like are thoroughly removed, and the cleaning and removing rate is more than 99.8%. The cleaning agent can not corrode metal elements, and the surface of the cleaned semiconductor chip is bright and free from oxidation, so that the production quality is greatly improved, and the production cost is saved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a graph showing the effect of the cleaning agent for semiconductor chips according to example 1;
fig. 2 is a graph showing the effect of the cleaning agent for semiconductor chips according to comparative example 1 after cleaning.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely, and it is apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
In order to more fully understand the technical content of the present invention, the following description and description of the technical solution of the present invention will be further presented with reference to specific embodiments.
Preparation method of environment-friendly cleaning agent for semiconductor chip
And mixing the stripping agent, the softening material, the accelerator, the dispersing agent, the penetrating agent, the metal protecting agent and the deionized water, and stirring for 1-2 hours under the conditions that the water bath temperature is 50-60 ℃ and the rotating speed is 1000-2000r/min to obtain the environment-friendly cleaning agent for the semiconductor chip.
The stripping agent is prepared by mixing alcohol ether, organic amine, surfactant and organic solvent and stirring for 10-30 min.
Method for cleaning semiconductor chip
The environment-friendly cleaning agent for the semiconductor chip is adopted for cleaning the semiconductor chip, and comprises the following steps:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains 8-20% of environment-friendly cleaning agent (balance of deionized water) for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at the temperature of 35-40 ℃ and then taken out after 5-10min is cleaned;
s2, washing the semiconductor chip with deionized water at the temperature of 60-80 ℃ for 2-3 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Preferably, in step S1, the environmental protection cleaning agent solution contains an environmental protection cleaning agent for semiconductor chips with a mass concentration of 10-12%.
The semiconductor chip is tested after cleaning according to the following performance test method.
The performance test method comprises the following steps:
surface appearance: the semiconductor chip was observed with a 10-fold mirror or microscope to examine whether the surface of the semiconductor chip had residues such as visible spots, oil stains, oxidized, corroded metals, waxes, and photoresists.
Cleaning rate: the calculation formula of the cleaning rate x is as follows: x= (m 1-m 2)/(m 1-m 0) ×100%. Wherein: m0: the unprocessed semiconductor chip is weighed. m1: the semiconductor chip is weighed again after a series of processing treatments. m2: and weighing after cleaning the semiconductor chip by using the cleaning agent. (wherein, the processing in m1 refers to the production process of semiconductor chips through production wafers, oxidization, lithography, etching, film deposition, interconnection, testing, packaging, and the like)
Example 1
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 8g/L of dodecyl propyl betaine, 10g/L of propylene glycol methyl ether acetate, 0.8g/L of sodium humate, 8g/L of sodium mono-lauryl sulfosuccinate, 0.04g/L of 2-undecyl imidazoline and 8g/L of stripping agent, wherein the stripping agent is a mixture of propylene glycol methyl ether acetate, N-diethyl ethanolamine, cocoyl glucoside and N, N-diethyl formamide, and the mass ratio of the propylene glycol methyl ether acetate, the N, N-diethyl ethanolamine, the cocoyl glucoside and the N, N-diethyl formamide is 1:0.1:0.10:2, the balance being deionized water.
The preparation method of the environment-friendly cleaning agent for the semiconductor chip of the embodiment 1 comprises the following steps:
the stripping agent, the softening material, the accelerator, the dispersing agent, the penetrating agent, the metal protecting agent and the deionized water are mixed and stirred for 1.5 hours under the conditions that the water bath temperature is 55 ℃ and the rotating speed is 1500 r/min, so that the environment-friendly cleaning agent for the semiconductor chip of the embodiment 1 is obtained.
The stripping agent is prepared by mixing and stirring alcohol ether, organic amine, surfactant and organic solvent for 20 min.
The environment-friendly cleaning agent for semiconductor chips of example 1 was subjected to cleaning of semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains environment-friendly cleaning agent with the mass concentration of 10% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at the temperature of 35 ℃ and then taken out after 6 min is cleaned;
s2, washing the semiconductor chip with deionized water at the temperature of 60 ℃ for 2-3 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip. Fig. 1 is a graph showing the effect of the cleaning agent for semiconductor chips according to example 1 of the present invention.
Example 2-example 7 the preparation method of the environment-friendly cleaning agent for semiconductor chips was the same as example 1.
Example 2
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 10g/L of N, N-diethylbenzylamine, 12g/L of vinyltrimethylsilane, 0.9g/L of sodium hexametaphosphate, 10g/L of sodium diisooctyl succinate, 0.04g/L of sodium 2-heptadecenyl-1-aminoethyl imidazoline chloride and 12g/L of stripping agent, wherein the stripping agent is a mixture of fatty alcohol polyoxyethylene ether, N-diethyl ethanolamine, coco glucoside and N, N-diethyl formamide, and the mass ratio of the fatty alcohol polyoxyethylene ether to the N, N-diethyl ethanolamine to the coco glucoside to the N, N-diethyl formamide is 1:0.08:0.12:3.6, the balance being deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 2 was subjected to cleaning of semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains environment-friendly cleaning agent with the mass concentration of 10% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at the temperature of 36 ℃ and then taken out after 8 min is cleaned;
s2, washing the semiconductor chip with deionized water at 65 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Example 3
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 12g/L of dodecyl dimethyl benzyl ammonium chloride, 8g/L of dodecyl guanidine acetate, 1.0g/L of sodium tripolyphosphate, 8g/L of sodium monolauryl sulfosuccinate and 0.04g/L of stripping agent, wherein the stripping agent is 2-undecyl imidazoline, 10g/L of propylene glycol methyl ether acetate, ethylene bis stearamide, coco glucoside and N, N-diethyl formamide, and the mass ratio of propylene glycol methyl ether acetate, ethylene bis stearamide, coco glucoside and N, N-diethyl formamide is 1:0.12:0.1:3.78, the balance being deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 3 was subjected to cleaning of semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 11% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at 39 ℃ and then taken out after 8 min is cleaned;
s2, washing the semiconductor chip with deionized water at the temperature of 70 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Example 4
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 10g/L of trialkylamine, 15g/L of vinyltrimethylsilane, 0.8g/L of sodium tripolyphosphate, 10g/L of sodium monolauryl sulfosuccinate, 0.06g/L of 2-undecylimidazoline and 12g/L of stripping agent, wherein the stripping agent is a mixture of glycerol polyoxyethylene ether, m-ethoxyaniline, cetostearyl glucoside and N, N-diethylformamide, and the mass ratio of the glycerol polyoxyethylene ether, m-ethoxyaniline, cetostearyl glucoside to N, N-diethylformamide is 1:0.2:0.15:3.45, and the balance of deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 4 was subjected to cleaning of semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 12% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at the temperature of 40 ℃ and then taken out after 10mi of cleaning;
s2, washing the semiconductor chip with deionized water at 65 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Example 5
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 10g/L of dodecyl propyl betaine, 12g/L of propylene glycol methyl ether acetate, 0.8g/L of sodium tripolyphosphate, 8g/L of sodium monolauryl sulfosuccinate, 0.06g/L of sodium lauroyl methylaminopropionate and 8g/L of stripping agent, wherein the stripping agent is a mixture of propylene glycol methyl ether acetate, ethylene bis stearamide, cocoyl glucoside and N, N-diethyl formamide, and the mass ratio of propylene glycol methyl ether acetate, ethylene bis stearamide, cocoyl glucoside and N, N-diethyl formamide is 1:0.2:0.12:2.68, the balance being deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 5 was subjected to cleaning of semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 11% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at 37 ℃ and then taken out after 6 min is cleaned;
s2, washing the semiconductor chip with deionized water at 80 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Example 6
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 12g/L of dodecyl dimethyl benzyl ammonium chloride, 10g/L of propylene glycol methyl ether acetate, 1.0g/L of sodium tripolyphosphate, 11g/L of sodium monolauryl sulfosuccinate and 0.08g/L of stripping agent, wherein the stripping agent is 2-undecyl imidazoline, 12g/L of propylene glycol methyl ether acetate, ethylene bis stearamide, cetostearyl glucoside and N, N-diethyl formamide, and the mass ratio of propylene glycol methyl ether acetate, ethylene bis stearamide, cetostearyl glucoside and N, N-diethyl formamide is 1:0.25:0.18:4.57, the balance deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 6 was used for cleaning semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 12% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at 37 ℃ and is taken out after 10mi of cleaning;
s2, washing the semiconductor chip with deionized water at the temperature of 75 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Example 7
An environment-friendly cleaning agent for a semiconductor chip comprises the following components in mass concentration: 11g/L of dodecyl dimethyl benzyl ammonium chloride, 12g/L of vinyl trimethyl silane, 1.1g/L of sodium humate, 10g/L of diisooctyl succinate sodium sulfonate, 0.08g/L of 2-heptadecenyl-1-aminoethyl imidazoline sodium chloride and 12g/L of stripping agent, wherein the stripping agent is a mixture of glycerol polyoxyethylene ether, N-diethyl ethanolamine, cetostearyl glucoside and N, N-diethyl formamide, and the mass ratio of the glycerol polyoxyethylene ether to the N, N-diethyl ethanolamine to the cetostearyl glucoside to the N, N-diethyl formamide is 1:0.3:0.25:4.45, the balance being deionized water.
The environment-friendly cleaning agent for semiconductor chips of example 7 was used for cleaning semiconductor chips, comprising the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 12% for a semiconductor chip, and the semiconductor chip is soaked in the environment-friendly cleaning agent solution for cleaning at 38 ℃ and is taken out after 10mi of cleaning;
s2, washing the semiconductor chip with deionized water at the temperature of 70 ℃ for 2 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of examples 1 to 7, and the test results are shown in table 1 below:
TABLE 1 environmental protection cleaning agent Performance test results for semiconductor chips of examples 1-7
From the test results in table 1, the environment-friendly cleaning agent for semiconductor chips provided by the invention has the advantages of simple proportioning, short cleaning time, convenient operation, no toxicity or harm, no other side effects and low economic cost from the aspects of proportioning and application. The environment-friendly cleaning agent for the semiconductor chip has obvious effect of improving the quality yield of the semiconductor chip, and the cleaned semiconductor chip has uniform and bright color, clean surface, no visible spots, no contamination or greasy dirt and complete removal of residues such as wax, photoresist and the like.
The preparation methods of the environmental protection cleaning agents for semiconductor chips of comparative examples 1 to 22, and the cleaning steps for semiconductor chips by the environmental protection cleaning agents for semiconductor chips were the same as in example 1.
1. Based on the influence of different mass concentrations of softening material
Comparative examples 1 to 3 differ from example 1 in the mass concentration of the softening material, and the other conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 1 to 3, and the test results are shown in table 2:
TABLE 2 environmental cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 1-3
Fig. 2 is a graph showing the effect of the cleaning agent for semiconductor chips according to comparative example 1 after cleaning. As is clear from the test results shown in FIGS. 1 and 2 and Table 2, the above-mentioned environment-friendly cleaning agent for semiconductor chips has poor cleaning rate, oxidized surface appearance, poor color and luster, and stain and residual gum phenomenon without adding any softening material (comparative example 1). When the mass concentration of the softening material is less than 1g/L (comparative example 2) or more than 15g/L (comparative example 3), the performance test results are not ideal. Therefore, the mass concentration of the softening material in the environment-friendly cleaning agent for semiconductor chips is preferably 2-15g/L.
2. Based on the influence of different mass concentrations of accelerator
Comparative examples 4 to 6 differ from example 1 in the mass concentration of the accelerator, and the other conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 4 to 6, and the test results are shown in table 3:
TABLE 3 environmental cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 4-6
As can be seen from the test results in Table 3, the above-mentioned environmentally friendly cleaning agent for semiconductor chips was poor in cleaning rate, oxidized in surface appearance, poor in color, and stained and gummed when no accelerator (comparative example 4) was added. The mass concentration of the accelerator was less than 5g/L (comparative example 5) or more than 20g/L (comparative example 6), and the results of the performance test were not ideal. Therefore, the mass concentration of the accelerator in the environment-friendly cleaning agent for semiconductor chips is preferably 5-20g/L.
3. Based on the influence of different mass concentrations of the dispersant
Comparative examples 7 to 9 differ from example 1 in the mass concentration of the dispersant, and the other conditions were the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 7 to 9, and the test results are shown in table 4:
TABLE 4 environmental cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 7-9
As can be seen from the test results in Table 4, the above-mentioned environment-friendly cleaning agent for semiconductor chips was poor in cleaning rate, oxidized in surface appearance, poor in color and luster, and stained and gummed in the absence of the dispersant (comparative example 7). The dispersant mass concentration was less than 0.2g/L (comparative example 8) or greater than 2g/L (comparative example 9), and the performance test results were not ideal. Therefore, the mass concentration of the dispersant in the environment-friendly cleaning agent for semiconductor chips is preferably 0.2-2g/L.
4. Based on the influence of different mass concentrations of the penetrant
Comparative examples 10 to 12 differ from example 1 in the mass concentration of the penetrant, and the other conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 10 to 12, and the test results are shown in table 5:
TABLE 5 environmental protection cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 10-12
As can be seen from the test results in Table 5, the above-mentioned environmentally friendly cleaning agent for semiconductor chips was poor in cleaning rate, oxidized in surface appearance, poor in color, and stained and gummed when no penetrant (comparative example 10) was added. The mass concentration of penetrant is lower than 5g/L (comparative example 11) or higher than 15g/L (comparative example 12), and the performance test results are not ideal. Therefore, the mass concentration of the penetrant in the environment-friendly cleaning agent for semiconductor chips is preferably 5-15g/L.
5. Influence of different mass ratios based on accelerator and dispersant
Comparative examples 13 to 14 differ from example 1 in the mass ratio of the accelerator and the dispersant, and the other conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 13 to 14, and the test results are shown in table 6:
TABLE 6 environmental cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 13-14
As can be seen from the test results in table 6, the performance test results were not ideal when the mass ratio of the accelerator to the dispersant in the above-mentioned environment-friendly cleaning agent for semiconductor chips was relatively small (comparative example 13) or the mass ratio of the accelerator to the dispersant was relatively large (comparative example 14). Therefore, the mass ratio of the accelerator to the dispersant in the environment-friendly cleaning agent for semiconductor chips is preferably 1: (0.02-0.3).
6. Influence of different mass concentrations based on the metal protectant
Comparative examples 15 to 17 are different from example 1 in the mass concentration of the metal protecting agent, and the remaining conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 15 to 17, and the test results are shown in table 7:
TABLE 7 environmental cleaner Performance test results for semiconductor chips of example 1, comparative examples 15-17
As can be seen from the test results of Table 7, the above-mentioned environmental protection cleaner for semiconductor chips was poor in cleaning rate, oxidized in surface appearance, poor in color, and stained and gummed when no metal protecting agent (comparative example 15) was added. The metal protectant mass concentration was less than 0.02g/L (comparative example 16) or greater than 0.1g/L (comparative example 17), and the performance test results were not ideal. Therefore, the mass concentration of the metal protecting agent in the environment-friendly cleaning agent for semiconductor chips is preferably 0.02-0.1g/L.
7. Based on the influence of different mass concentrations of the stripping agent
Comparative examples 18 to 20 differ from example 1 in the mass concentration of the stripping agent, and the other conditions were the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 18 to 20, and the test results are shown in table 8:
TABLE 8 environmental cleaner Performance test results for semiconductor chips of example 1, comparative examples 18-20
As is clear from the test results shown in Table 8, the above-mentioned environmentally friendly cleaning agent for semiconductor chips was poor in cleaning rate, oxidized in surface appearance, poor in color, and stained and gummed in the absence of the stripping agent (comparative example 16). The quality concentration of the stripping agent was below 5g/L (comparative example 19) or above 20g/L (comparative example 20), and the performance test results were not ideal. Therefore, the mass concentration of the metal protecting agent in the environment-friendly cleaning agent for semiconductor chips is preferably 5-20g/L.
8. Based on the influence of different mass proportion concentrations of alcohol ether, organic amine, surfactant and organic solvent in stripping agent
Comparative examples 21 to 22 differ from example 1 in the mass ratio of alcohol ether, organic amine, surfactant, and organic solvent in the stripping agent, and the other conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and comparative examples 21 to 22, and the test results are shown in table 9:
TABLE 9 environmental cleaning agent Performance test results for semiconductor chips of example 1, comparative examples 21-22
As is clear from the test results in Table 9, the performance test results were not ideal when the ratio by mass of the alcohol ether, the organic amine, the surfactant, and the organic solvent in the stripping agent for the environment-friendly cleaning agent for semiconductor chips was relatively small (comparative example 21) or the ratio by mass of the organic amine and the surfactant was relatively large (comparative example 22). Therefore, the mass ratio of alcohol ether, organic amine, surfactant and organic solvent in the stripping agent of the environment-friendly cleaning agent for the semiconductor chip is preferably 1: (0.05-0.3): (0.06-0.25): (1-6).
9. Blank examples
Blank example the blank example differs from example 1 in that the components in the environment-friendly cleaning agent for semiconductor chips are deionized water only, and the rest conditions are the same. Performance tests were performed on the environment-friendly cleaning agents for semiconductor chips of example 1 and blank examples, and the test results are shown in table 10:
TABLE 10 environmental protection cleaning agent Performance test results for semiconductor chips for example 1, blank example
As can be seen from the test results in Table 10, the environmental cleaning agent for semiconductor chips is blank, and the performance test results are very unsatisfactory.
In summary, the invention provides an environment-friendly cleaning agent for semiconductor chips, a preparation method and application thereof, which can clean the surfaces of the semiconductor chips efficiently and rapidly without using ultrasonic equipment and other equipment under the condition of pure soaking, remove any residual substances such as wax, photoresist and the like, has short cleaning time, does not corrode and attack metal elements, has bright and non-oxidized surfaces, has a cleaning rate of more than 99.8%, and improves the quality yield. The environment-friendly cleaning agent stripping agent for the semiconductor chip uses N, N-diethyl formamide (DEF solvent) to replace N-methyl pyrrolidone (NMP solvent) and N, N-dimethyl formamide (DMF solvent), so that the generation of harmful gas can be effectively reduced, the pollution to the environment is avoided, and the environment-friendly cleaning agent stripping agent has the positive significance of environmental protection, low production cost and sustainable development.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. The environment-friendly cleaning agent for the semiconductor chip is characterized by comprising the following components in mass concentration:
the mass ratio of the accelerator to the dispersant is 1: (0.02-0.3);
the accelerator is at least one selected from propylene glycol methyl ether acetate, vinyl trimethyl silane and dodecyl guanidine acetate;
the dispersing agent is at least one of sodium humate, sodium hexametaphosphate and sodium tripolyphosphate:
the stripping agent is a mixture of alcohol ether, organic amine, surfactant and organic solvent, and the mass ratio of the alcohol ether to the organic amine to the surfactant to the organic solvent is 1: (0.05-0.3): (0.06-0.25): (1-6);
the alcohol ether is at least one selected from propylene glycol methyl ether acetate, fatty alcohol polyoxyethylene ether and glycerol polyoxyethylene ether; the organic amine is at least one selected from N, N-diethyl ethanolamine, m-ethoxyaniline and ethylene bis-stearamide; the surfactant is at least one selected from coco glucoside, lauryl glucoside and cetostearyl glucoside; the organic solvent is N, N-diethyl formamide.
2. The environment-friendly cleaning agent for semiconductor chips as defined in claim 1, wherein the softening material is at least one selected from dodecyl propyl betaine, N-diethyl benzylamine, dodecyl dimethyl benzyl ammonium chloride and trialkylamine; the penetrating agent is at least one selected from sodium sulfosuccinate monolauryl ester, sodium diisooctyl succinate and sodium diisooctyl succinate; the metal protective agent is at least one selected from 2-undecyl imidazoline, sodium 2-heptadecenyl-1-aminoethyl imidazoline chloride, sodium lauroyl methylaminopropionate and amidimidazole.
3. The environment-friendly cleaning agent for semiconductor chips as defined in claim 2, wherein the mass ratio concentration of the accelerator to the dispersant is 1: (0.02-0.25).
4. The environment-friendly cleaning agent for semiconductor chips as defined in claim 2, which is composed of the following components in mass concentration:
5. the environment-friendly cleaning agent for semiconductor chips as defined in claim 4, which is composed of the following components in mass concentration:
6. the method for preparing an environment-friendly cleaning agent for semiconductor chips as defined in any one of claims 1 to 5, comprising the steps of:
and mixing the stripping agent, the softening material, the accelerator, the dispersing agent, the penetrating agent, the metal protecting agent and the deionized water, and stirring for 1-2 hours under the conditions of water bath temperature of 50-60 ℃ and rotating speed of 1000-2000r/min to obtain the environment-friendly cleaning agent for the semiconductor chip.
7. The method for preparing the environment-friendly cleaning agent for the semiconductor chip as claimed in claim 6, wherein the stripping agent is prepared by mixing alcohol ether, organic amine, surfactant and organic solvent and stirring for 10-30 min.
8. A method for cleaning a semiconductor chip, characterized in that the cleaning of the semiconductor chip is performed by using the environment-friendly cleaning agent for semiconductor chips as claimed in any one of claims 1 to 5.
9. The method of cleaning a semiconductor chip as claimed in claim 8, wherein the cleaning of the semiconductor chip comprises the steps of:
s1, preparing an environment-friendly cleaning agent solution, wherein the environment-friendly cleaning agent solution contains an environment-friendly cleaning agent with the mass concentration of 8-20% for a semiconductor chip, soaking the semiconductor chip in the environment-friendly cleaning agent solution at the temperature of 35-40 ℃ for cleaning for 5-10min, and taking out the semiconductor chip;
s2, washing the semiconductor chip with deionized water at the temperature of 60-80 ℃ for 2-3 times, and then wiping the surface of the semiconductor chip with dry cloth to finish the cleaning of the semiconductor chip.
10. The method for cleaning semiconductor chips as defined in claim 9, wherein in the step S1, the environmental protection cleaning agent solution contains environmental protection cleaning agent for semiconductor chips with a mass concentration of 10-12%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310805077.5A CN116814342A (en) | 2023-07-03 | 2023-07-03 | Environment-friendly cleaning agent for semiconductor chip and preparation method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310805077.5A CN116814342A (en) | 2023-07-03 | 2023-07-03 | Environment-friendly cleaning agent for semiconductor chip and preparation method and application thereof |
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| Publication Number | Publication Date |
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| CN116814342A true CN116814342A (en) | 2023-09-29 |
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| CN202310805077.5A Pending CN116814342A (en) | 2023-07-03 | 2023-07-03 | Environment-friendly cleaning agent for semiconductor chip and preparation method and application thereof |
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| Country | Link |
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| CN (1) | CN116814342A (en) |
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