CN116801698A - Special external high-tightness thermoelectric semiconductor module and manufacturing method thereof - Google Patents
Special external high-tightness thermoelectric semiconductor module and manufacturing method thereof Download PDFInfo
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- CN116801698A CN116801698A CN202310624062.9A CN202310624062A CN116801698A CN 116801698 A CN116801698 A CN 116801698A CN 202310624062 A CN202310624062 A CN 202310624062A CN 116801698 A CN116801698 A CN 116801698A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 144
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002245 particle Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000000919 ceramic Substances 0.000 claims abstract description 53
- 238000007789 sealing Methods 0.000 claims abstract description 33
- 238000005476 soldering Methods 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 230000001502 supplementing effect Effects 0.000 claims description 4
- 230000002950 deficient Effects 0.000 abstract description 7
- 239000000565 sealant Substances 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 48
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005057 refrigeration Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application discloses a thermoelectric semiconductor module with special external connection and high sealing performance, which comprises a thermoelectric semiconductor module, wherein the thermoelectric semiconductor module comprises a heat absorbing surface ceramic substrate, a heat releasing surface ceramic substrate and P/N type semiconductor particles arranged between the heat absorbing surface ceramic substrate and the heat releasing surface ceramic substrate, two adjacent copper particles at the position of an external connection lead on the heat releasing surface ceramic substrate are provided with conductive holes, and the conductive holes are connected with terminals of the external connection lead in a soldering manner. According to the application, the terminal is externally connected with the lead, and the periphery of the thermoelectric semiconductor module can be sealed by the disposable sealant without the blocking of the lead, so that the sealing property of the product is obviously improved; through the limiting function of the terminal female end, the thermoelectric semiconductor module is ensured to be far away from the screw, and the product failure caused by the screw crushing of the thermoelectric semiconductor module is avoided; the risk of product failure caused by wire cold welding is reduced, and the output of defective products is reduced; is not limited by the height of semiconductor particles, and is suitable for high-current products.
Description
Technical Field
The application relates to the technical field of thermoelectric refrigeration, in particular to a thermoelectric semiconductor module which is externally connected and has high sealing performance and a manufacturing method thereof.
Background
With the progress and iteration of thermoelectric refrigeration technology, thermoelectric semiconductor modules are receiving more and more attention in recent years. The thermoelectric semiconductor module generally includes two substrates disposed opposite to each other, and P-type semiconductor thermoelectric particles and N-type semiconductor thermoelectric particles are disposed between the two substrates in series with each other at a predetermined interval.
At present, the thermoelectric semiconductor module with large size is generally electrified in the form of welding wires, and then external sealing is performed to increase the sealing performance of the product. The thermoelectric semiconductor module product is utilized to realize refrigeration application, and most of the situations of failure after long-time operation are failure caused by corrosion of an internal circuit, so that sealing is required to be performed outside the thermoelectric semiconductor module to ensure tightness, but the sealing cannot be performed in place once due to the blocking of a welding wire, and a sealing head is required to be performed at the root of the wire, so that the sealing effect of the product is limited. In addition, the soldering wire has a cold soldering phenomenon, which can lead to power failure of the product; when the thermoelectric semiconductor module is assembled, the position of the thermoelectric semiconductor module is deviated due to infinite positions, so that a screw is contacted with a ceramic substrate, and a final product is invalid; for high-current products, the problem that the wires bear current needs to be considered, so that large-size wires are selected, but the semiconductor particles are short in height, and the outer diameter of the wires is larger than the height of the semiconductor particles, so that the wire bonding is difficult.
Disclosure of Invention
The application mainly aims to solve the problems that the existing thermoelectric semiconductor module structure is poor in tightness, a lead virtual welding phenomenon exists, a screw is easy to crush the thermoelectric semiconductor module and a bonding wire of a high-current product is difficult to damage, and provides a special thermoelectric semiconductor module with external connection and high tightness and a manufacturing method thereof; through the limiting function of the terminal female end, the thermoelectric semiconductor module is ensured to be far away from the screw, and the product failure caused by the screw crushing of the thermoelectric semiconductor module is avoided; the risk of product failure caused by wire cold welding is reduced, and the output of defective products is reduced; is not limited by the height of semiconductor particles, and is suitable for high-current products.
In order to achieve the above object, the present application adopts the following technical scheme.
The thermoelectric semiconductor module comprises a thermoelectric semiconductor module, wherein the thermoelectric semiconductor module comprises a heat absorbing surface ceramic substrate, a heat releasing surface ceramic substrate and P/N type semiconductor particles arranged between the heat absorbing surface ceramic substrate and the heat releasing surface ceramic substrate, two copper particles adjacent to each other at the position of an external lead on the heat releasing surface ceramic substrate are provided with conductive holes, and the conductive holes are connected with terminals of the external lead in a soldering manner; and sealing the periphery of the thermoelectric semiconductor module. The application provides a special external high-tightness thermoelectric semiconductor module, which is characterized in that a terminal is externally connected with a lead, a terminal female end is reversely inserted into two conductive holes arranged on two adjacent copper particles on a ceramic substrate with a heat release surface and soldered by soldering, then a terminal rubber shell is connected with the lead, and an assembly of the lead and the terminal rubber shell is inserted into the terminal female end for electrifying, and as the lead is not blocked, the periphery of the thermoelectric semiconductor module can be sealed in place at one time without a glue head, thereby reducing the possibility of product failure caused by condensate water entering the thermoelectric semiconductor module from the root of the lead, and remarkably improving the tightness of the product; the terminal female end can limit the hot-face radiator, so that the thermoelectric semiconductor module is ensured to be positioned at the middle position between the cold-face aluminum block and the hot-face radiator and is far away from the screw, and the screw is prevented from crushing the thermoelectric semiconductor module to cause product failure; the risk of product failure caused by wire cold welding is reduced, and the output of defective products is reduced; the high-voltage wire is not limited by the height of semiconductor particles, is suitable for high-current products, and solves the problem that the wire bonding is difficult due to the fact that the outer diameter of a wire of the high-current product is larger than the height of the semiconductor particles.
Preferably, the terminal comprises a terminal female end and a terminal rubber shell, wherein the terminal female end is reversely inserted into the conductive hole and fixed by soldering tin, and the terminal rubber shell is connected with the lead. The terminal female end is reversely inserted into the two conductive holes, and is soldered on the ceramic substrate of the heat release surface in a tin supplementing way, so that the firmness is improved, the terminal rubber shell is externally connected with a lead, and the assembly of the lead and the terminal rubber shell is inserted into the terminal female end for electrifying.
Preferably, a cold-face aluminum block is arranged on one face of the heat-absorbing-face ceramic substrate, which is far away from the P/N type semiconductor particles.
Preferably, a hot-surface radiator is arranged on one surface of the ceramic substrate with the heat release surface, which is far away from the P/N type semiconductor particles.
Preferably, the P/N type semiconductor particles include a plurality of P type bismuth telluride semiconductor particles and a plurality of N type bismuth telluride semiconductor particles, and after the P type bismuth telluride semiconductor particles and the N type bismuth telluride semiconductor particles are electrified, the thermoelectric semiconductor module can perform refrigeration or heating.
Preferably, the conducting wire is a power wire, and the power wire is used for being connected with a power supply to realize electrifying.
A manufacturing method of a thermoelectric semiconductor module with special external connection and high sealing performance is suitable for the thermoelectric semiconductor module with special external connection and high sealing performance, and comprises the following steps:
step S1: assembling the heat absorbing surface ceramic substrate, the P/N type semiconductor particles and the heat releasing surface ceramic substrate into a thermoelectric semiconductor module through reflow soldering;
step S2: the terminal female end passes through a conductive hole on the ceramic substrate of the heat release surface and is fixed by tin supplementing welding;
step S3: sealing the periphery of the thermoelectric semiconductor module by sealing glue at one time;
step S4: fixing the cold-face aluminum block, the thermoelectric semiconductor module and the hot-face radiator through screws;
step S5: connecting the lead with the terminal rubber shell, and inserting the assembly of the lead and the terminal rubber shell into the female end of the terminal;
the application also provides a manufacturing method of the thermoelectric semiconductor module with special external connection and high tightness, the terminal female end is reversely inserted into two conductive holes arranged on two adjacent copper particles on the ceramic substrate of the heat release surface and welded by tin repair, and as no lead is blocked, the periphery of the thermoelectric semiconductor module can be sealed in place at one time without a glue head, thereby reducing the possibility of product failure caused by condensate water entering the thermoelectric semiconductor module from the root of the lead and remarkably improving the tightness of the product; when the screw is used for fixing the cold-face aluminum block, the thermoelectric semiconductor module and the hot-face radiator, the thermoelectric semiconductor module is ensured to be positioned at the middle position between the cold-face aluminum block and the hot-face radiator by utilizing the limiting function of the female end of the terminal, and the screw is far away from the screw, so that the product failure caused by the screw crushing of the thermoelectric semiconductor module is avoided; the risk of product failure caused by wire cold welding is reduced, and defective product output is reduced; the high-voltage wire is not limited by the height of semiconductor particles, is suitable for high-current products, and solves the problem that the wire bonding is difficult due to the fact that the outer diameter of a wire of the high-current product is larger than the height of the semiconductor particles.
Preferably, in step S2, the conductive holes are disposed on two copper particles adjacent to each other at positions of the external conductive wires on the ceramic substrate with heat release surface.
Preferably, in step S4, the thermoelectric semiconductor module is mounted at an intermediate position between the cold-face aluminum block and the hot-face heat sink, far from the screw, by limiting the terminal female end on the hot-face heat sink. According to the application, the terminal female end can limit the position of the hot-face radiator, so that the thermoelectric semiconductor module is ensured to be positioned in the middle of the cold-hot-face aluminum block and away from the screw, the thermoelectric semiconductor module is prevented from being damaged by touching the ceramic substrate in the screwing process, the thermoelectric semiconductor module is crushed, and therefore, the product is invalid, and the reliability of the product is improved.
Therefore, the application has the advantages that:
(1) The terminal is externally connected with the lead, so that the periphery of the thermoelectric semiconductor module can be sealed in place at one time without being blocked by the lead, a glue head is not required to be made, the possibility of product failure caused by condensate water entering the thermoelectric semiconductor module from the root of the lead is reduced, and the sealing property of the product is remarkably improved;
(2) The terminal female end can limit the hot-face radiator, so that the thermoelectric semiconductor module is ensured to be positioned at the middle position between the cold-face aluminum block and the hot-face radiator and is far away from the screw, and the screw is prevented from crushing the thermoelectric semiconductor module to cause product failure;
(3) The risk of product failure caused by wire cold welding is reduced, and the output of defective products is reduced;
(4) The high-voltage wire is not limited by the height of semiconductor particles, is suitable for high-current products, and solves the problem that the wire bonding is difficult due to the fact that the outer diameter of a wire of the high-current product is larger than the height of the semiconductor particles.
Drawings
Fig. 1 is a schematic structural diagram of a thermoelectric semiconductor module with special external connection and high sealing performance in an embodiment of the application.
Fig. 2 is a schematic diagram of a thermoelectric semiconductor module with special external connection and high sealing performance according to an embodiment of the present application.
Fig. 3 is a schematic structural view of a thermoelectric semiconductor module and a female terminal of the embodiment of the application.
Fig. 4 is a flow chart of a method for manufacturing a thermoelectric semiconductor module with special external connection and high sealing performance in an embodiment of the application.
1. Cold-face aluminum blocks; 2. a ceramic substrate with a heat absorbing surface; 3. sealing glue; 4. a ceramic substrate with a heat release surface; 5. a hot-side radiator; 6. a screw; 7. a wire; 8. a terminal rubber shell; 9. a terminal female end; 10. P/N type semiconductor particles; 11. thermoelectric semiconductor module 12, conductive vias.
Detailed Description
The application is further described below with reference to the drawings and detailed description.
Embodiment one.
The thermoelectric semiconductor module with special external connection and high sealing performance comprises a thermoelectric semiconductor module 11, wherein the thermoelectric semiconductor module 11 comprises a heat absorbing surface ceramic substrate 2, a heat releasing surface ceramic substrate 4 and P/N type semiconductor particles 10 arranged between the heat absorbing surface ceramic substrate 2 and the heat releasing surface ceramic substrate 4, a cold surface aluminum block 1 is arranged on one surface of the heat absorbing surface ceramic substrate 2 away from the P/N type semiconductor particles 10, and a heat surface radiator 5 is arranged on one surface of the heat releasing surface ceramic substrate 4 away from the P/N type semiconductor particles 10. Two adjacent copper particles at the position of the external connection wire 7 on the ceramic substrate 4 with a heat release surface are provided with conductive holes 12, the conductive holes 12 are in solder connection with terminals of the external connection wire 7, specifically, the terminals comprise terminal female ends 9 and terminal rubber shells 8, the terminal female ends 9 are reversely inserted into the conductive holes 12 and fixed by soldering tin, the firmness is improved, after the terminal rubber shells 8 are connected with the wires 7, an assembly of the wires 7 and the terminal rubber shells 8 is inserted into the terminal female ends 9 for electrifying; the thermoelectric semiconductor module 11 is sealed with the sealant 3 at one time around.
The embodiment provides a special external high-tightness thermoelectric semiconductor module, which is characterized in that a terminal is externally connected with a lead wire 7, a terminal female end 9 is reversely inserted into two conductive holes 12 arranged on two adjacent copper particles on a ceramic substrate 4 with a heat release surface and soldered by soldering, then a terminal rubber shell 8 is connected with the lead wire 7, and an assembly of the lead wire 7 and the terminal rubber shell 8 is inserted into the terminal female end 9 for electrifying, and as the lead wire 7 is not blocked, the periphery of the thermoelectric semiconductor module 11 can be sealed in place at one time without a glue head, thereby reducing the possibility of product failure caused by the fact that condensed water enters the thermoelectric semiconductor module 11 from the root of the lead wire 7, and remarkably improving the tightness of the product; the terminal female end 9 can limit the hot-face radiator 5, so that the thermoelectric semiconductor module 11 is ensured to be positioned at the middle position between the cold-face aluminum block 1 and the hot-face radiator 5 and away from the screw 6, and the screw 6 is prevented from crushing the thermoelectric semiconductor module 11 to cause product failure; the risk of product failure caused by the wire 7 cold joint is reduced, and the output of defective products is reduced; the high-voltage wire is not limited by the height of semiconductor particles, is suitable for high-current products, and solves the problem that the wire bonding is difficult due to the fact that the outer diameter of the wire 7 is larger than the height of the semiconductor particles.
The P/N type semiconductor particles 10 include a plurality of P type bismuth telluride semiconductor particles and a plurality of N type bismuth telluride semiconductor particles, and after the P type bismuth telluride semiconductor particles and the N type bismuth telluride semiconductor particles are energized, the thermoelectric semiconductor module can perform cooling or heating.
The conducting wire 7 is a power wire which is used for being connected with a power supply to realize electrifying.
Embodiment two.
The manufacturing method of the thermoelectric semiconductor module with special external connection and high sealing performance is suitable for the thermoelectric semiconductor module with special external connection and high sealing performance, as shown in fig. 4, and comprises the following steps:
step S1: assembling the heat absorbing surface ceramic substrate, the P/N type semiconductor particles and the heat releasing surface ceramic substrate into a thermoelectric semiconductor module through reflow soldering;
step S2: the terminal female end passes through a conductive hole on the ceramic substrate of the heat release surface and is fixed by tin supplementing welding;
step S3: sealing the periphery of the thermoelectric semiconductor module by sealing glue at one time;
step S4: fixing the cold-face aluminum block, the thermoelectric semiconductor module and the hot-face radiator through screws;
step S5: and connecting the lead with the terminal rubber shell, and inserting the assembly of the lead and the terminal rubber shell into the female end of the terminal.
The embodiment also provides a manufacturing method of the thermoelectric semiconductor module with special external connection and high sealing performance, wherein the terminal female end is reversely inserted into two conductive holes arranged on two adjacent copper particles on the ceramic substrate with the heat release surface and welded by tin repair, and as no lead is blocked, the periphery of the thermoelectric semiconductor module can be sealed in place at one time without a glue head, so that the possibility of product failure caused by condensate water entering the thermoelectric semiconductor module from the root of the lead is reduced, and the sealing performance of the product is remarkably improved; when the screw is used for fixing the cold-face aluminum block, the thermoelectric semiconductor module and the hot-face radiator, the thermoelectric semiconductor module is ensured to be positioned at the middle position between the cold-face aluminum block and the hot-face radiator by utilizing the limiting function of the female end of the terminal, and the screw is far away from the screw, so that the product failure caused by the screw crushing of the thermoelectric semiconductor module is avoided; the risk of product failure caused by wire cold welding is reduced, and defective product output is reduced; the high-voltage wire is not limited by the height of semiconductor particles, is suitable for high-current products, and solves the problem that the wire bonding is difficult due to the fact that the outer diameter of a wire of the high-current product is larger than the height of the semiconductor particles.
In step S2, the conductive holes are arranged on two copper particles adjacent to each other at the position of the external connection wire on the ceramic substrate with the heat release surface.
In step S4, limiting is carried out on the hot-face radiator through the terminal female end, and the thermoelectric semiconductor module is installed at the middle position between the cold-face aluminum block and the hot-face radiator and far away from the screw. According to the embodiment, the terminal female end can limit the hot-face radiator, so that the thermoelectric semiconductor module is ensured to be positioned at the middle position of the cold-hot-face aluminum block and away from the screw, the thermoelectric semiconductor module is prevented from being damaged by touching the ceramic substrate in the screwing process, the thermoelectric semiconductor module is crushed, the product is invalid, and the reliability of the product is improved.
Embodiment three.
A manufacturing method of a thermoelectric semiconductor module with special external connection and high sealing performance comprises the steps of assembling a heat absorbing surface ceramic substrate 2, P/N type semiconductor particles 10 and a heat releasing surface ceramic substrate 4 through reflow soldering to form a thermoelectric semiconductor module 11, as shown in FIG. 3; penetrating and soldering the terminal female end 9 through the conductive hole 12 on the ceramic substrate 4 with the heat release surface, as shown in fig. 2; sealing the periphery of the thermoelectric semiconductor module 11 by using sealant 3; fixing a cold-face aluminum block 1, a heat-absorbing face ceramic substrate 2, sealant 3, a heat-releasing face ceramic substrate 4, a hot-face radiator 5 and a terminal female end 9 through screws 7; finally, the terminal housing 8 and wire 7 assembly is inserted into the terminal female end 9 as shown in fig. 1. Thus, the thermoelectric semiconductor module of this embodiment is completed.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (9)
1. The thermoelectric semiconductor module is characterized by comprising a thermoelectric semiconductor module, wherein the thermoelectric semiconductor module comprises a heat absorbing surface ceramic substrate, a heat releasing surface ceramic substrate and P/N type semiconductor particles arranged between the heat absorbing surface ceramic substrate and the heat releasing surface ceramic substrate, two adjacent copper particles at the position of an external lead on the heat releasing surface ceramic substrate are provided with conductive holes, and the conductive holes are connected with terminals of the external lead in a soldering manner; and sealing the periphery of the thermoelectric semiconductor module.
2. The special external high-tightness thermoelectric semiconductor module according to claim 1, wherein the terminal comprises a terminal female end and a terminal rubber shell, the terminal female end is reversely inserted into the conductive hole and fixed by soldering, and the terminal rubber shell is connected with a wire.
3. The special external high-tightness thermoelectric semiconductor module according to claim 1, wherein a cold-face aluminum block is arranged on one face of the heat absorbing face ceramic substrate far away from the P/N type semiconductor particles.
4. A thermoelectric semiconductor module with special external connection and high tightness according to claim 1 or 3, wherein a hot-face radiator is arranged on one face of the ceramic substrate with heat-release face far away from the P/N type semiconductor particles.
5. The special external connection and high-tightness thermoelectric semiconductor module according to claim 1, wherein the P/N type semiconductor particles comprise a plurality of P type bismuth telluride semiconductor particles and a plurality of N type bismuth telluride semiconductor particles.
6. The thermoelectric semiconductor module with special external connection and high tightness according to claim 1 or 2, wherein the conducting wire is a power wire, and the power wire is used for connecting with a power source.
7. A method for manufacturing a thermoelectric semiconductor module with special external connection and high sealing performance, which is applicable to the thermoelectric semiconductor module with special external connection and high sealing performance according to any one of claims 1 to 6, and is characterized by comprising the following steps:
step S1: assembling the heat absorbing surface ceramic substrate, the P/N type semiconductor particles and the heat releasing surface ceramic substrate into a thermoelectric semiconductor module through reflow soldering;
step S2: the terminal female end passes through a conductive hole on the ceramic substrate of the heat release surface and is fixed by tin supplementing welding;
step S3: sealing the periphery of the thermoelectric semiconductor module by sealing glue at one time;
step S4: fixing the cold-face aluminum block, the thermoelectric semiconductor module and the hot-face radiator through screws;
step S5: and connecting the lead with the terminal rubber shell, and inserting the assembly of the lead and the terminal rubber shell into the female end of the terminal.
8. The method of claim 7, wherein in step S2, the conductive holes are formed on two copper particles adjacent to each other at the position of the external conductive wire on the ceramic substrate with heat release surface.
9. The method for manufacturing a thermoelectric semiconductor module with special external connection and high tightness according to claim 7 or 8, wherein in step S4, the thermoelectric semiconductor module is mounted at an intermediate position between the cold-face aluminum block and the hot-face heat sink, far from the screw, by limiting the terminal female end on the hot-face heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310624062.9A CN116801698A (en) | 2023-05-30 | 2023-05-30 | Special external high-tightness thermoelectric semiconductor module and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310624062.9A CN116801698A (en) | 2023-05-30 | 2023-05-30 | Special external high-tightness thermoelectric semiconductor module and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116801698A true CN116801698A (en) | 2023-09-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310624062.9A Pending CN116801698A (en) | 2023-05-30 | 2023-05-30 | Special external high-tightness thermoelectric semiconductor module and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN116801698A (en) |
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2023
- 2023-05-30 CN CN202310624062.9A patent/CN116801698A/en active Pending
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