CN116794765A - Optoelectronic integrated module and preparation method thereof - Google Patents
Optoelectronic integrated module and preparation method thereof Download PDFInfo
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- CN116794765A CN116794765A CN202210259223.4A CN202210259223A CN116794765A CN 116794765 A CN116794765 A CN 116794765A CN 202210259223 A CN202210259223 A CN 202210259223A CN 116794765 A CN116794765 A CN 116794765A
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- chip
- lithium niobate
- thin film
- silicon nitride
- film lithium
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 69
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000013307 optical fiber Substances 0.000 claims abstract description 59
- 230000008878 coupling Effects 0.000 claims abstract description 35
- 238000010168 coupling process Methods 0.000 claims abstract description 35
- 238000005859 coupling reaction Methods 0.000 claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 2
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
Abstract
The present disclosure relates to an optoelectronic integrated module and a method of manufacturing the same, the optoelectronic integrated module comprising: a heat sink cushion block; the thin film lithium niobate chip is arranged on the heat sink cushion block and comprises a first waveguide layer; the silicon nitride chip is arranged on the heat sink cushion block and comprises a second waveguide layer, and the second waveguide layer comprises: an input waveguide matched with the mode field of the optical fiber to receive the laser transmitted by the optical fiber; and an output waveguide matched with the mode field of the first waveguide layer to transmit laser to the thin film lithium niobate chip to realize optical coupling between the thin film lithium niobate chip and the optical fiber.
Description
Technical Field
The present disclosure relates to the field of integrated photonics, and in particular, to an optoelectronic integrated module and a method of making the same.
Background
Lithium niobate has excellent optical properties and is widely used in the field of optical communication. However, conventional lithium niobate has a weak limitation to light, is large in size, and is difficult to integrate. The film lithium niobate system can overcome the defects of the traditional lithium niobate system, has compact structure and is easy to integrate. At present, the lithium niobate chip adopts an end face light emitting mode, and because the mode field size is smaller in the vertical direction, the lithium niobate chip is difficult to match with the optical fiber end, the coupling loss is larger, and meanwhile, the alignment tolerance is small, so that the optical fiber is difficult to fix and package. In order to improve the coupling efficiency, the loss of the mode spot converter structure and the optical fiber formed by adopting two times of etching at the end face needs to be reduced, the requirements on equipment process are extremely high, and the mode spot converter structure and the optical fiber are difficult to use on a large scale.
Disclosure of Invention
In view of the above, the present disclosure provides an optoelectronic integrated module and a method for manufacturing the same, so as to solve at least one technical problem of the above and other aspects.
To achieve the above object, according to one aspect of the present disclosure, there is provided an optoelectronic integrated module including: a heat sink cushion block; the thin film lithium niobate chip is arranged on the heat sink cushion block and comprises a first waveguide layer; the silicon nitride chip is arranged on the heat sink cushion block and comprises a second waveguide layer, and the second waveguide layer comprises: an input waveguide matched with the mode field of the optical fiber to receive the laser transmitted by the optical fiber; and an output waveguide matched with the mode field of the first waveguide layer to transmit laser to the thin film lithium niobate chip to realize optical coupling between the thin film lithium niobate chip and the optical fiber.
According to the embodiment of the disclosure, the end surfaces of the input waveguide and the output waveguide are respectively provided with an etched groove structure for regulating and controlling the coupling degree of the end surfaces; the end face of the input waveguide is etched to form an inverted cone-shaped template converter structure which is configured to be matched with the mode field of the optical fiber.
According to an embodiment of the present disclosure, the thickness of the second waveguide layer of the silicon nitride chip is the same as the thickness of the first waveguide layer.
According to an embodiment of the present disclosure, a heatsink pad includes: a base portion on which a silicon nitride chip is disposed; and a step portion protruding from the base portion at one end of the base portion, the thin film lithium niobate chip being provided on the step portion.
According to an embodiment of the present disclosure, the silicon nitride chip further includes: a substrate; an isolation layer disposed on the substrate to isolate the second waveguide layer from the substrate; and an upper cladding layer for protecting the second waveguide layer.
According to embodiments of the present disclosure, the thin film lithium niobate chip is an active chip or a passive chip.
According to the embodiment of the disclosure, the end face of the thin film lithium niobate chip is of a single-layer waveguide structure.
According to embodiments of the present disclosure, the optical fiber is a tapered optical fiber or a small core optical fiber.
In another aspect of the present disclosure, a method for preparing an optoelectronic integrated module is provided, including: step S1: preparing a thin film lithium niobate chip, and polishing the end face of a first waveguide layer of the thin film lithium niobate chip; step S2: manufacturing a silicon nitride chip, wherein the end surfaces of the two ends of the silicon nitride chip are respectively provided with an etching groove by using a deep etching process; step S3: determining the height of the second waveguide layer of the silicon nitride chip and the optical fiber according to the height of the first waveguide layer; step S4: fixing a thin film lithium niobate chip on the step part of the heat sink cushion block; step S5: and adjusting the position of the silicon nitride chip, fixing the silicon nitride chip on the base part of the heat sink cushion block, and filling the refraction index matching liquid at the end surface coupling position of the thin film lithium niobate chip and the silicon nitride chip to finish the optical coupling of the thin film lithium niobate chip and the optical fiber.
According to the embodiment of the disclosure, the thin film lithium niobate chip and the silicon nitride chip in the step S4 and the step S5 are fixed on the heat sink cushion block by adopting an ultraviolet adhesive curing process.
According to the photoelectric integrated module and the preparation method thereof, the second waveguide layer of the silicon nitride chip is close to the first waveguide layer of the thin film lithium niobate chip in refractive index, the end face coupling loss is small, the output waveguide is matched with the first waveguide layer of the thin film lithium niobate chip in mode field through the input waveguide of the silicon nitride chip being matched with the mode field of the optical fiber, and laser transmitted by the receiving optical fiber is transmitted to the thin film lithium niobate chip, so that optical coupling between the thin film lithium niobate chip and the optical fiber is realized.
Drawings
FIG. 1 is a cross-sectional view of an optoelectronic integrated module according to an embodiment of the present disclosure;
FIG. 2 is a top view of an optoelectronic integrated module according to an embodiment of the present disclosure; and
fig. 3 is a flowchart of a method of manufacturing an optoelectronic integrated module according to an embodiment of the present disclosure.
Description of the reference numerals
1 heat sink cushion block
11 base
12 step part
2 film lithium niobate chip
21 first waveguide layer
3 silicon nitride chip
31 input waveguide
32 output waveguide
4 optical fiber
5 etching groove
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
Traditional lithium niobate has weak limitation on light, larger size and difficult integration. At present, the lithium niobate chip adopts an end face light emitting mode, and because the mode field size is smaller in the vertical direction, the lithium niobate chip is difficult to match with the optical fiber end, the coupling loss is larger, and meanwhile, the alignment tolerance is small, so that the optical fiber is difficult to fix and package. The thin film lithium niobate system can overcome the defects of the traditional lithium niobate system, has compact structure and easy integration, but has large coupling loss with optical fibers, high requirements on equipment and process and is difficult to use on a large scale.
To this end, according to one aspect of the present disclosure, there is provided an optoelectronic integrated module including: a heat sink cushion block; the thin film lithium niobate chip is arranged on the heat sink cushion block and comprises a first waveguide layer; the silicon nitride chip is arranged on the heat sink cushion block and comprises a second waveguide layer, and the second waveguide layer comprises: an input waveguide matched with the mode field of the optical fiber to receive the laser transmitted by the optical fiber; and an output waveguide matched with the mode field of the first waveguide layer to transmit laser to the thin film lithium niobate chip to realize optical coupling between the thin film lithium niobate chip and the optical fiber.
According to another aspect of the present disclosure, there is provided a method of manufacturing an optoelectronic integrated module, including: step S1: preparing a thin film lithium niobate chip, and polishing the end face of a first waveguide layer of the thin film lithium niobate chip; step S2: manufacturing a silicon nitride chip, wherein the end surfaces of the two ends of the silicon nitride chip are respectively provided with an etching groove by using a deep etching process; step S3: determining the height of the second waveguide layer of the silicon nitride chip and the optical fiber according to the height of the first waveguide layer; step S4: fixing a thin film lithium niobate chip on the step part of the heat sink cushion block; step S5: and adjusting the position of the silicon nitride chip, fixing the silicon nitride chip on the base part of the heat sink cushion block, and filling the refraction index matching liquid at the end surface coupling position of the thin film lithium niobate chip and the silicon nitride chip to finish the optical coupling of the thin film lithium niobate chip and the optical fiber.
In the photoelectric integrated module and the preparation method thereof, the second waveguide layer of the silicon nitride chip is utilized to have similar refractive index with the first waveguide layer of the thin film lithium niobate chip, the end surface coupling loss is small, meanwhile, the silicon nitride processing technology is mature, the coupling loss is small, the input waveguide of the silicon nitride chip can be matched with the mode field of the optical fiber, the output waveguide is matched with the mode field of the first waveguide layer of the thin film lithium niobate chip, and the laser transmitted by the receiving optical fiber is transmitted to the thin film lithium niobate chip, so that the optical coupling between the thin film lithium niobate chip and the optical fiber is realized.
Specific examples are set forth below to provide a detailed description of the technical aspects of the present disclosure. It should be noted that the following specific embodiments are only examples and are not intended to limit the disclosure.
FIG. 1 is a cross-sectional view of an optoelectronic integrated module according to an embodiment of the present disclosure; fig. 2 is a top view of an optoelectronic integrated module in accordance with an embodiment of the present disclosure.
As shown in fig. 1 and 2, an embodiment of the present disclosure provides an optoelectronic integrated module including: a heat sink cushion block 1, a thin film lithium niobate chip 2 and a silicon nitride chip 3. Wherein, the film lithium niobate chip 2 is arranged on the heat sink cushion block 1 and comprises a first waveguide layer 21; the silicon nitride chip 3 is disposed on the heatsink pad 1 and includes a second waveguide layer, and the second waveguide layer includes: an input waveguide 31 matched with the mode field of the optical fiber 4 to receive the laser light transmitted by the optical fiber 4; and an output waveguide 32 matched to the mode field of the first waveguide layer 21 to deliver laser light to the thin film lithium niobate chip 2, to achieve optical coupling of the thin film lithium niobate chip 2 and the optical fiber 4.
According to the embodiment of the disclosure, the end surfaces of the input waveguide 31 and the output waveguide 32 are provided with etched groove 5 structures to regulate the coupling degree of the end surfaces. Wherein, the end face of the input waveguide 31 is etched to form an inverted cone-shaped template converter structure for matching with the mode field of the optical fiber 4; the width of the output waveguide 32 matches the first waveguide layer 21 of the thin film lithium niobate chip 2.
The refractive index of the silicon nitride is similar to that of the lithium niobate, and the silicon nitride is highly controllable, and can be matched with the thin film lithium niobate, so that the end surface coupling loss of the silicon nitride and the thin film lithium niobate is reduced. Meanwhile, the silicon nitride processing technology is mature, and the inverted cone-shaped spot-size converter can be matched with a general tapered optical fiber or a small-core-diameter optical fiber, so that the low-loss coupling and packaging are facilitated.
According to the embodiment of the present disclosure, the thickness of the second waveguide layer of the silicon nitride chip 3 is the same as the thickness of the first waveguide layer 21 of the thin film lithium niobate chip 2 for low-loss matching.
According to an embodiment of the present disclosure, the heatsink spacer 1 includes a base 11 and a step 12 for supporting the thin film lithium niobate chip 2 and the silicon nitride chip 3 while matching the heights of the two. The silicon nitride chip 3 is provided on the base 11, and the step 12 is a portion protruding from the base at one end of the base 11, and the thin film lithium niobate chip 2 is provided on the step 12.
According to an embodiment of the present disclosure, the silicon nitride chip 3 further includes: a substrate, an isolation layer and an upper cladding layer. Wherein the isolation layer is disposed on the substrate to isolate the second waveguide layer from the substrate; the upper cladding layer is used for protecting the second waveguide layer.
According to the embodiment of the disclosure, the isolation layer of the silicon nitride chip 3 is made of silicon oxide material, and the thickness is 2 μm; the waveguide layer is made of silicon nitride material; the upper cladding layer is made of silicon oxide material and has a thickness of 2 μm.
According to embodiments of the present disclosure, the thin film lithium niobate chip 2 may be an active chip or a passive chip.
According to the embodiment of the disclosure, the end face of the thin film lithium niobate chip 2 is of a single-layer waveguide structure, and complex multiple etching processes are not required.
According to an embodiment of the present disclosure, the optical fiber 4 is a tapered optical fiber or a small core optical fiber.
Fig. 3 is a flowchart of a method of manufacturing an optoelectronic integrated module according to an embodiment of the present disclosure.
As shown in fig. 3, an embodiment of the present disclosure provides a method for manufacturing an optoelectronic integrated module, including: step S1: preparing a thin film lithium niobate chip 2, and polishing the end face of a first waveguide layer 21 of the thin film lithium niobate chip 2; step S2: manufacturing a silicon nitride chip 3, and manufacturing etching grooves 5 on the end surfaces of the two ends of the silicon nitride chip 3 by using a deep etching process; step S3: the height of the second waveguide layer of the silicon nitride chip 3 and the optical fiber 4 is determined according to the height of the first waveguide layer 21; step S4: fixing a thin film lithium niobate chip 2 on a step part 12 of a heat sink cushion block 1; step S5: and adjusting the position of the silicon nitride chip 3, fixing the silicon nitride chip 3 on the base 11 of the heat sink cushion block 1, and filling the refraction index matching liquid at the end surface coupling position of the thin film lithium niobate chip 2 and the silicon nitride chip 3 to finish the optical coupling of the thin film lithium niobate chip 2 and the optical fiber 4.
According to an embodiment of the present disclosure, the silicon nitride chip 3 is fabricated in S2 using standard CMOS processes.
According to the embodiment of the disclosure, the thin film lithium niobate chip 2 and the silicon nitride chip 3 in step S4 and step S5 are fixed on the heat sink pad 1 by an ultraviolet adhesive curing process.
According to the embodiment of the disclosure, in step S5, the silicon nitride chip 3 is moved by adsorption or clamping, and the position is precisely adjusted by using a six-dimensional adjusting frame, the thin film lithium niobate chip 2 extends into the deep etching groove 5 on the end surface of the silicon nitride chip 3, the output waveguide 32 of the silicon nitride chip 3 is aligned with the first waveguide layer 21 of the thin film lithium niobate chip 2, and the power of the light end surface of the light output by the first waveguide layer 21 of the thin film lithium niobate chip 2 is monitored in real time. Meanwhile, the optical fiber 4 is moved at the input end of the silicon nitride chip 3 to align with the input waveguide 31 of the silicon nitride chip 3, when the power reaches the maximum value, the silicon nitride chip 3 is fixed on the heat sink cushion block 1 in an ultraviolet adhesive curing mode, the optimal position is fixed at the moment, and finally, the end face coupling position of the thin film lithium niobate chip 2 and the silicon nitride chip 3 is filled with refractive index matching liquid, so that the loss is further reduced, and the fixing strength is increased.
According to the embodiment of the disclosure, when the active chip is coupled with the passive chip, the optical waveguide output end of the first waveguide layer 21 of the thin film lithium niobate chip 2 can monitor the optical power in real time by adopting a high-sensitivity large-area detector, so that the process is prevented from being complicated by adding an additional coupling optical fiber 4, and when the output power reaches the maximum value, the position of the silicon nitride chip 3 is fixed, thereby realizing the maximum coupling efficiency of the thin film lithium niobate chip 2 and the optical fiber 4.
According to embodiments of the present disclosure, the integral coupling structure may be performed within the cartridge.
According to embodiments of the present disclosure, the optical fiber 4 may be secured using a conventional laser welding process or an adhesive process.
According to the embodiment of the disclosure, two silicon nitride chips 3 and two optical fibers 4 can be used for double-end coupling and packaging of the thin film lithium niobate chip 2 according to practical situations. In further embodiments, more (e.g., 3, 4, or 5) silicon nitride chips 3 and more (e.g., 3, 4, or 5) optical fibers 4 may be used to double-end couple and package the thin film lithium niobate chip 2.
According to the photoelectric integrated module and the preparation method thereof, the second waveguide layer of the silicon nitride chip is close to the first waveguide layer of the thin film lithium niobate chip in refractive index, the end face coupling loss is small, meanwhile, the silicon nitride processing technology is mature, the coupling loss is small, the second waveguide layer can be matched with the optical fiber mode field, the output waveguide is matched with the first waveguide layer of the thin film lithium niobate chip in mode field through the input waveguide of the silicon nitride chip and the optical fiber mode field, and laser transmitted by the receiving optical fiber is transmitted to the thin film lithium niobate chip, so that the optical coupling between the thin film lithium niobate chip and the optical fiber is realized.
It should be further noted that, the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may cause confusion in understanding the present disclosure.
And the shapes and dimensions of the various elements in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the method of the invention should not be interpreted as reflecting the intention: i.e., the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
While the foregoing is directed to embodiments of the present disclosure, other and further details of the invention may be had by the present application, it is to be understood that the foregoing description is merely exemplary of the present disclosure and that no limitations are intended to the scope of the disclosure, except insofar as modifications, equivalents, improvements or modifications may be made without departing from the spirit and principles of the present disclosure.
Claims (10)
1. An optoelectronic integrated module, comprising:
a heat sink cushion block (1);
a thin film lithium niobate chip (2) which is arranged on the heat sink cushion block (1) and comprises a first waveguide layer (21);
and the silicon nitride chip (3) is arranged on the heat sink cushion block (1) and comprises a second waveguide layer, and the second waveguide layer comprises:
an input waveguide (31) matched with the mode field of the optical fiber (4) to receive the laser light transmitted by the optical fiber (4); and
and an output waveguide (32) matched with the mode field of the first waveguide layer (21) so as to transmit the laser to the thin film lithium niobate chip, thereby realizing optical coupling between the thin film lithium niobate chip and an optical fiber.
2. The optoelectronic integrated module of claim 1, wherein the end faces of the input waveguide and the output waveguide are each provided with an etched groove (5) structure for regulating the degree of coupling of the end faces;
wherein the end face of the input waveguide is etched to form an inverted tapered template transducer structure configured to match the mode field of the optical fiber (4).
3. The optoelectronic integrated module according to claim 1, wherein the thickness of the second waveguide layer of the silicon nitride chip (3) is the same as the thickness of the first waveguide layer (21).
4. The optoelectronic integrated module of claim 1 wherein the heatsink pad (1) comprises:
a base (11), the silicon nitride chip (3) being disposed on the base (11); and
a step (12) protruding from the base (11) at one end of the base (11), the thin film lithium niobate chip (2) being provided on the step (12).
5. The optoelectronic integrated module of claim 1, wherein the silicon nitride chip (3) further comprises:
a substrate;
an isolation layer disposed on the substrate to isolate the second waveguide layer from the substrate; and
and an upper cladding layer for protecting the second waveguide layer.
6. The optoelectronic integrated module of claim 1, wherein the thin film lithium niobate chip (2) is an active chip or a passive chip.
7. The optoelectronic integrated module of claim 1, wherein the end face of the thin film lithium niobate chip (2) is a single layer waveguide structure.
8. The optoelectronic integrated module of claim 1, wherein the optical fiber is a tapered fiber or a small core fiber.
9. A method of fabricating an optoelectronic integrated module according to any one of claims 1-5, comprising:
step S1: preparing a thin-film lithium niobate chip (2), and polishing the end face of a first waveguide layer (21) of the thin-film lithium niobate chip (2);
step S2: manufacturing a silicon nitride chip (3), and manufacturing etching grooves (5) on the end surfaces of two ends of the silicon nitride chip (3) by using a deep etching process;
step S3: determining the height of the second waveguide layer of the silicon nitride chip and the optical fiber (4) according to the height of the first waveguide layer (21);
step S4: fixing a thin film lithium niobate chip (2) on a step part (12) of a heat sink cushion block (1);
step S5: and adjusting the position of the silicon nitride chip, fixing the silicon nitride chip on the base part (11) of the heat sink cushion block (1), and filling the refractive index matching liquid at the end surface coupling position of the thin film lithium niobate chip (2) and the silicon nitride chip (3) to complete the optical coupling of the thin film lithium niobate chip and the optical fiber.
10. The method for manufacturing an optoelectronic integrated module according to claim 9, wherein the thin film lithium niobate chip (2) and the silicon nitride chip in step S4 and step S5 are fixed on the heat sink pad (1) by an ultraviolet adhesive curing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210259223.4A CN116794765A (en) | 2022-03-14 | 2022-03-14 | Optoelectronic integrated module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210259223.4A CN116794765A (en) | 2022-03-14 | 2022-03-14 | Optoelectronic integrated module and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116794765A true CN116794765A (en) | 2023-09-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210259223.4A Pending CN116794765A (en) | 2022-03-14 | 2022-03-14 | Optoelectronic integrated module and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116794765A (en) |
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2022
- 2022-03-14 CN CN202210259223.4A patent/CN116794765A/en active Pending
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