CN116793225A - Picometer-level micro-displacement sensor based on surface plasmon self-imaging - Google Patents
Picometer-level micro-displacement sensor based on surface plasmon self-imaging Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
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- 230000000694 effects Effects 0.000 claims abstract description 8
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- 239000000919 ceramic Substances 0.000 claims description 22
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- 239000004332 silver Substances 0.000 claims description 5
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- 238000005259 measurement Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 27
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000003754 machining Methods 0.000 description 1
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- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The application belongs to the technical field of micro-electromechanical systems and micro-displacement devices, and particularly relates to a picometer-level micro-displacement sensor based on surface plasmon self-imaging. The application utilizes a one-dimensional round hole microstructure to excite an in-plane SPP self-imaging effect in an optical excitation mode, and observes the spatial near-field light intensity distribution consistent with the structural parameters of the one-dimensional round hole in the in-plane direction of the metal film. The application can calculate the displacement by detecting the intensity of the light. And combining a high-power subdivision circuit to realize displacement measurement with picometer resolution.
Description
Technical Field
The application belongs to the technical field of micro-electromechanical systems and micro-displacement devices, and particularly relates to a picometer-level micro-displacement sensor based on surface plasmon self-imaging.
Background
The micro-displacement sensor is used as an important branch of the sensor, is generally used for converting physical quantities such as displacement, position, deformation, vibration, size and the like into electric quantities which are easy to quantitatively detect and convenient to transmit and process information, and has wide application in fields such as precision measurement, micromachining, microelectronic manufacturing and the like. With the development of semiconductor devices, MEMS processing and integrated systems, there is a higher demand for miniaturization and integration of high-precision displacement sensors. At present, miniaturized and integrated micro-displacement sensors are mostly based on electrical structures, the sensing principle is mainly based on potential type, capacitance type and other electrical principles, and mechanical displacement is converted into resistance, capacitance or voltage signals with fixed functional relation to the mechanical displacement and voltage signals are output. Such sensors have a resolution on the order of only millimeters/nanometers and are subject to electromagnetic interference and have poor environmental interference resistance. At present, an optical micro-displacement sensor based on grating diffraction interference has been widely paid attention in recent years due to the advantages of immune electromagnetic interference. However, limited by the diffraction limit of the laser wavelength, the optical period of such sensors is on the order of 100nm, with an overall resolution on the order of 0.1 nm. In summary, although the traditional grating type micro-displacement sensor is immune to electromagnetic interference, the resolution is difficult to break through on the order of 0.1 nm. The device is difficult to meet the requirements of ultra-precise machining and measuring applications such as positioning of a double workpiece table of a high-performance photoetching machine (7 nm and below) and positioning of a tool bit of an ultra-precise machine tool on an ultra-high resolution (picometer level) micro-displacement sensor.
Disclosure of Invention
Aiming at the technical problem that the resolution of the traditional grating type micro-displacement sensor is difficult to break through the order of 0.1nm, the application provides a picometer-level micro-displacement sensor based on surface plasmon self-imaging, which breaks through the optical diffraction limit, wherein the optical period of the traditional grating type micro-displacement sensor is only the order of 100nm, and the method utilizes a one-dimensional round hole microstructure (the period is the order of 10 nm), the in-plane SPP self-imaging effect is excited in an optical excitation mode, the displacement is calculated by detecting the periodical light intensity change through the movement of a near-field probe, and the resolution is improved to the order of 1-10pm by combining a high-power subdivision circuit. Compared with the traditional grating displacement sensor, the resolution can be improved by 1-2 orders of magnitude.
In order to solve the technical problems, the application adopts the following technical scheme:
the utility model provides a picometer level micro-displacement sensor based on surface plasmon is from formation of image, includes laser instrument, reflecting prism, micro objective, sample platform, sample, probe, be provided with reflecting prism on the light path direction of laser instrument, be provided with micro objective on reflecting prism's the reflection light way, the light that reflecting prism reflected is incident to the sample platform through micro objective, the sample has been placed on the sample platform, be provided with the probe directly over the sample.
The system also comprises a piezoelectric ceramic tube, a photomultiplier, a Z-direction driver, an XY-direction driver and a computer control and image processing system, wherein the probe is fixedly connected with the piezoelectric ceramic tube, and the piezoelectric ceramic tube is respectively and electrically connected with the Z-direction driver and the XY-direction driver.
The piezoelectric ceramic tube is electrically connected with a photomultiplier tube, and the photomultiplier tube is electrically connected with a Z-direction driver.
The Z-direction driver and the XY-direction driver are electrically connected with the computer control and image processing system.
The laser adopts HeNe laser or Ar + A laser, the wavelength of the HeNe laser is 632.8nm, the Ar + The wavelength of the laser is 514nm; the sample adopts a gold or silver film with the thickness of 50+/-10 nm, and the sample is evaporated onto a thin cover glass; the probe adopts an aluminum-coated glass fiber tip with the radius of 50-100 nm.
The diameter of the piezoelectric ceramic tube is 6.35mm, the length of the piezoelectric ceramic tube is 25mm, and the wall thickness of the piezoelectric ceramic tube is 0.5mm; the maximum scanning range of the piezoelectric ceramic tube is 10 mu m multiplied by 10 mu m; the parameter conversion sensitivity of the photomultiplier is 2 multiplied by 10 5 V/W, the resolution of the photomultiplier is 20nW.
A measuring method of a picometer-level micro-displacement sensor based on surface plasmon self-imaging comprises the following steps:
s1, the wavelength of the laser beam is lambda 0 The light of the light beam is refracted by the reflecting prism and enters the microscope objective, the light beam is collimated and then is back-incident to the lower surface of the metal film sample from the metal film sample, and the incident direction is along the z direction;
s2, a row of round holes are distributed on the metal film sample along the x direction, the interval distance is a, the diameter of each round hole is 0.5a, when incident light irradiates on the round hole array structure, each nano hole is equivalent to a secondary wave source, and SPP vibration in the metal film sample is excited under the action of a momentum matching principle;
s3, the plasma wave on the surface of the metal film sample is arranged on the surface of the metal film at the wavelength lambda sp Transmitting SPP waves generated by different secondary sources along the y direction, generating coherent superposition on the surface of the film, and exciting a self-imaging effect on the surface of the film;
s4, at the moment, a pattern with a period equal to a period a of the circular hole array in the x direction is observed at a certain distance from the small hole, and a self-imaging repetition period is defined as a self-imaging distance tau in the y direction;
s5, SPP waves on the surface of the metal film sample excite near-field light intensity distribution in space, the light intensity distribution is the same as the SPP wave space distribution, and a scanning probe is utilized to scatter near-field light components to a far field and collect the near-field light components;
s6, controlling a piezoelectric ceramic tube positioned at the top end of the probe through a Z-direction driver and an XY-direction driver, enabling the probe to be positioned at a fixed height h above a metal film sample all the time, and detecting an optical signal scattered to a far field by a far-field detector when h is smaller than an SPP evanescent field range;
s7, the optical signal is further received and amplified into an electric signal through a photomultiplier, when the probe is displaced relative to the metal film sample, the intensity of the near-field light component at the position of the probe changes, and the scattered light intensity detected by the far field changes.
The light beam in the S2 is incident in a plane wave mode and vertically irradiates on the back surface of the metal film; the electromagnetic field exiting from the small hole in the metal film is approximately regarded as the electromagnetic field emitted by a dipole, the oscillation frequency of which is the same as the frequency of the incident light:
the lambda is 0 Is the wavelength of the incident light, and c is the speed of light in vacuum.
And in the S4, transmitting the plasmons to a plasma far field along the y direction until the paraxial Talbot distance tau is accurately subjected to self-imaging, wherein the tau is expressed as follows:
the a is the space period of the hole array, and the lambda sp Is the wavelength of the plasmons; to ensure that a better SPP periodic self-imaging image is obtained, the spatial period of the hole array is less than or equal to the wavelength of the plasmons, namely a is less than or equal to lambda 0 。
The wavelength of the plasmons and the incident light wavelength satisfy the following relation:
the epsilon is the dielectric function of the metal at the SPP oscillation frequency.
Compared with the prior art, the application has the beneficial effects that:
the application utilizes a one-dimensional round hole microstructure to excite an in-plane SPP self-imaging effect in an optical excitation mode, and observes the spatial near-field light intensity distribution consistent with the structural parameters of the one-dimensional round hole in the in-plane direction of the metal film. The periodic near-field light component is extracted by the near-field probe, and when the near-field probe is displaced relative to the one-dimensional round hole metal micro-nano structure, the intensity of the light component extracted by the probe is periodically changed correspondingly. Therefore, the displacement amount can be estimated by detecting the light intensity. And combining a high-power subdivision circuit to realize displacement measurement with picometer resolution.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It will be apparent to those skilled in the art from this disclosure that the drawings described below are merely exemplary and that other embodiments may be derived from the drawings provided without undue effort.
The structures, proportions, sizes, etc. shown in the present specification are shown only for the purposes of illustration and description, and are not intended to limit the scope of the application, which is defined by the claims, so that any structural modifications, changes in proportions, or adjustments of sizes, which do not affect the efficacy or the achievement of the present application, should fall within the scope of the application.
FIG. 1 is a schematic diagram of the structure of the present application;
FIG. 2 is a Talbot effect diagram of the present application;
FIG. 3 is an enlarged view of the detection area of the present application;
FIG. 4 is a diagram showing the arrangement of nanopores according to the present application;
FIG. 5 is a graph of the distance Deltax traveled by the probe of the present application along the x-axis as a function of scattered light intensity I;
FIG. 6 is a graph of circular aperture period as a function of optical period in accordance with the present application;
FIG. 7 is a graph of circular hole period as a function of resolution for a 5000-fold potential subdivision plate incorporating the present application.
Wherein: 1 is a laser, 2 is a reflecting prism, 3 is a microscope objective, 4 is a sample stage, 5 is a sample, 6 is a probe, 7 is a piezoelectric ceramic tube, 8 is a photomultiplier, 9 is a Z-direction driver, 10 is an XY-direction driver, and 11 is a computer control and image processing system.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described below, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments, and these descriptions are only for further illustrating the features and advantages of the present application, not limiting the claims of the present application; all other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In this embodiment, as shown in fig. 1, the device consists of a laser 1, a reflecting prism 2, a microscope objective 3, a sample stage 4, a sample 5, a probe 6, a piezoelectric ceramic tube 7, a photomultiplier 8, a Z-direction driver 9, an XY-direction driver 10, and a computer control and image processing system 11. A schematic diagram of the detection area is shown in fig. 2. The laser beam 1 emits a wavelength lambda 0 The light beam is collimated and then enters the microscope objective 3 from the back surface of the metal film sample 5 (the incident direction is along the z direction). A row of round holes are distributed on the metal film sample 5 along the x direction, the spacing distance is a, and the diameter of each round hole is 0.5a. When incident light irradiates on the circular hole array structure, each nano hole is equivalent to a secondary wave source, and SPP oscillation in the metal film sample 5 is excited under the action of a momentum matching principle. The surface plasmon wave is applied to the surface of the metal film sample 5 at a wavelength lambda sp Transmitted in the y-direction. SPP waves generated by different secondary wave sources are coherently overlapped on the surface of the metal film sample 5, and self-imaging effect is excited on the surface of the metal film sample 5. At this point, a pattern with a period in the x-direction equivalent to period a of the circular array is observed at a distance from the aperture, as shown in FIG. 2. The repetition period of the self-imaging in the y-direction is defined as the self-imaging distance τ.
The SPP wave on the surface of the metal thin film sample 5 excites the near-field light intensity distribution in space, which is the same as the SPP wave spatial distribution. With the scanning probe 6, near field light components can be scattered to the far field and collected as shown in fig. 3. The piezoelectric ceramic tube 7 positioned at the top end of the probe 6 is controlled by the Z-direction driver 9 and the XY-direction driver 10, so that the probe 6 is always positioned at a fixed height h above the metal film sample 5. When h is less than the SPP evanescent field range, the far-field detector will detect the optical signal scattered into the far field. The signal is further received and amplified into an electrical signal via a photomultiplier tube 8. When the probe is displaced relative to the metal film sample 5, the intensity of the near-field light component at the position where the probe is located changes, and causes the intensity of the scattered light detected in the far field to change accordingly.
The specific analysis is as follows:
wherein, the light beam is incident in a plane wave mode and vertically irradiates on the back surface of the metal film sample 5;
the electromagnetic field emitted from the small hole on the metal film sample 5 can be approximately regarded as an electromagnetic field emitted by a dipole, and the oscillation frequency of the dipole is the same as the frequency of the incident light:
wherein: lambda (lambda) 0 Is the wavelength of the incident light, c is the speed of light in vacuum.
Wherein the plasmons are transmitted in the y-direction to the far field of the plasma until self-imaging is accurately presented at the paraxial taber distance τ. Wherein, the expression of τ is:
wherein a is the spatial period of the array of holes, lambda sp Is the wavelength of the plasmons.
Wherein, in order to ensure that a better SPP periodic self-imaging graph is obtained, the structural period should be less than or equal to the wavelength of the plasma,i.e. a is less than or equal to lambda 0 ；
Wherein, the wavelength of the plasma and the incident light wavelength satisfy the following relation:
wherein light propagates after being converted to SP mode on a flat metal surface, but gradually weakens due to losses caused by metal absorption. This attenuation depends on the dielectric function epsilon of the metal at the SP oscillation frequency. In practical applications, silver is the least lost metal in the visible spectrum, with less attenuation of light.
Wherein the probe used is an aluminum-coated glass fiber tip with a radius of 50-100 nm.
The probes always move in parallel along the surface of the metal film at the same distance, and the maximum signal is measured at a position about 30nm away from contact because the SP propagation of the probes with the metal coating can be influenced.
The parameters of the specific implementation mode are as follows:
laser 1 light source parameters: the light source is HeNe or Ar + Lasers, i.e., 632.8nm or 514nm;
the multiple of immersion oil microscope objective 3 was 40×, n.a. =1.3;
sample 5 is a gold/silver thin film with the thickness of 50+/-10 nm, and is evaporated onto a thin cover glass;
the duty cycle d/a is about 0.5;
the dielectric constant epsilon= -130.83+i3.32 of silver, |epsilon|>>1, so lambda sp lambda 0 ；
The used probe 6 is an aluminum-coated glass fiber tip with the radius of 50-100nm, so that the loss is small and the sensitivity is high;
the piezoelectric ceramic tube 7 has a diameter of 6.35mm, a length of 25mm and a wall thickness of 0.5mm. The maximum scanning range is 10 μm×10μm;
photomultiplier 8 parameter conversion sensitivity 2 x 10 5 V/W, resolution 20nW.
The laser 1 emits a laser beam with the wavelength of 632.8nm, the laser beam passes through a reflecting prism and is refracted to the microscope objective 3 to be collimated to obtain plane waves, and the plane waves are incident from the back surface of the metal film sample 5 in the vertical direction. As shown in fig. 4, the number of the nanopores is 10, the space period is a=50 nm, the diameter is d=25 nm, and the taber distance τ=7.90 nm is calculated.
The planar light forms self-imaging at a distance of one time Talbot (7.90 nm) after passing through the sample, and after being scanned by the probe in parallel, the photomultiplier 8 receives scattered light intensity, and the scattered light intensity shows a periodic sine change rule along with the change of displacement as shown in fig. 5 and 6. The optical period is consistent with the circular hole period, and as shown in figure 7, the resolution is improved to the order of 1-10pm by combining 5000 times of subdivision circuit.
In summary, the picometer-level micro-displacement sensor based on surface plasmon self-imaging breaks through the optical diffraction limit by utilizing the strong local characteristic of SPP, the optical period of the traditional grating-type micro-displacement sensor is only 100nm, the method utilizes a one-dimensional round hole microstructure (the period is 10 nm), the in-plane SPP self-imaging effect is excited by an optical excitation mode, the periodic light intensity change is detected through the movement of a near-field probe to calculate the displacement, and the resolution is improved to 1-10pm by combining a 5000-time subdivision circuit. Compared with the traditional grating displacement sensor, the resolution can be improved by 1-2 orders of magnitude.
The preferred embodiments of the present application have been described in detail, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present application, and the various changes are included in the scope of the present application.
Claims (10)
1. The utility model provides a picometer level micro-displacement sensor based on surface plasmon self-imaging which characterized in that: including laser instrument (1), reflecting prism (2), microobjective (3), sample platform (4), sample (5), probe (6), be provided with reflecting prism (2) on the light path direction of laser instrument (1), be provided with microobjective (3) on the reflection light path of reflecting prism (2), the light of reflecting prism (2) reflection is incident sample platform (4) through microobjective (3), sample (5) have been placed on sample platform (4), be provided with probe (6) directly over sample (5).
2. The picometer-scale micro-displacement sensor based on surface plasmon self-imaging of claim 1, wherein: the device also comprises a piezoelectric ceramic tube (7), a photomultiplier tube (8), a Z-direction driver (9), an XY-direction driver (10) and a computer control and image processing system (11), wherein the probe (6) is fixedly connected with the piezoelectric ceramic tube (7), and the piezoelectric ceramic tube (7) is respectively and electrically connected with the Z-direction driver (9) and the XY-direction driver (10).
3. The picometer-scale micro-displacement sensor based on surface plasmon self-imaging of claim 1, wherein: the piezoelectric ceramic tube (7) is electrically connected with a photomultiplier tube (8), and the photomultiplier tube (8) is electrically connected with a Z-direction driver (9).
4. The picometer-scale micro-displacement sensor based on surface plasmon self-imaging of claim 1, wherein: the Z-direction driver (9) and the XY-direction driver (10) are electrically connected with the computer control and image processing system (11).
5. The picometer-scale micro-displacement sensor based on surface plasmon self-imaging of claim 1, wherein: the laser (1) adopts a HeNe laser or Ar + A laser, the wavelength of the HeNe laser is 632.8nm, the Ar + The wavelength of the laser is 514nm; the sample (5) adopts a gold or silver film with the thickness of 50+/-10 nm, and the sample (5) is evaporated onto a thin cover glass; the probe (6) adopts an aluminum-coated glass fiber tip with the radius of 50-100 nm.
6. The picometer-scale micro-displacement sensor based on surface plasmon self-imaging of claim 2, wherein: the diameter of the piezoelectric ceramic tube (7) is 6.35mm, the length of the piezoelectric ceramic tube (7) is 25mm, and the wall thickness of the piezoelectric ceramic tube (7) is 0.5mm;the maximum scanning range of the piezoelectric ceramic tube (7) is 10 mu m multiplied by 10 mu m; the parameter conversion sensitivity of the photomultiplier (8) is 2×10 5 V/W, the resolution of the photomultiplier tube (8) is 20nW.
7. The measurement method of the picometer-scale micro-displacement sensor based on surface plasmon self-imaging according to any one of claims 1 to 6, wherein the measurement method comprises the following steps: comprises the following steps:
s1, the wavelength of the laser beam is lambda 0 The light of the light beam is refracted by the reflecting prism and enters the microscope objective, the light beam is collimated and then is back-incident to the lower surface of the metal film sample from the metal film sample, and the incident direction is along the z direction;
s2, a row of round holes are distributed on the metal film sample along the x direction, the interval distance is a, the diameter of each round hole is 0.5a, when incident light irradiates on the round hole array structure, each nano hole is equivalent to a secondary wave source, and SPP vibration in the metal film sample is excited under the action of a momentum matching principle;
s3, the plasma wave on the surface of the metal film sample is arranged on the surface of the metal film at the wavelength lambda sp Transmitting SPP waves generated by different secondary sources along the y direction, generating coherent superposition on the surface of the film, and exciting a self-imaging effect on the surface of the film;
s4, at the moment, a pattern with a period equal to a period a of the circular hole array in the x direction is observed at a certain distance from the small hole, and a self-imaging repetition period is defined as a self-imaging distance tau in the y direction;
s5, SPP waves on the surface of the metal film sample excite near-field light intensity distribution in space, the light intensity distribution is the same as the SPP wave space distribution, and a scanning probe is utilized to scatter near-field light components to a far field and collect the near-field light components;
s6, controlling a piezoelectric ceramic tube positioned at the top end of the probe through a Z-direction driver and an XY-direction driver, enabling the probe to be positioned at a fixed height h above a metal film sample all the time, and detecting an optical signal scattered to a far field by a far-field detector when h is smaller than an SPP evanescent field range;
s7, the optical signal is further received and amplified into an electric signal through a photomultiplier, when the probe is displaced relative to the metal film sample, the intensity of the near-field light component at the position of the probe changes, and the scattered light intensity detected by the far field changes.
8. The measurement method of the picometer-scale micro-displacement sensor based on surface plasmon self-imaging according to claim 7, wherein the measurement method comprises the following steps of: the light beam in the S2 is incident in a plane wave mode and vertically irradiates on the back surface of the metal film; the electromagnetic field exiting from the small hole in the metal film is approximately regarded as the electromagnetic field emitted by a dipole, the oscillation frequency of which is the same as the frequency of the incident light:
the lambda is 0 Is the wavelength of the incident light, and c is the speed of light in vacuum.
9. The measurement method of the picometer-scale micro-displacement sensor based on surface plasmon self-imaging according to claim 7, wherein the measurement method comprises the following steps of: and in the S4, transmitting the plasmons to a plasma far field along the y direction until the paraxial Talbot distance tau is accurately subjected to self-imaging, wherein the tau is expressed as follows:
the a is the space period of the hole array, and the lambda sp Is the wavelength of the plasmons; to ensure that a better SPP periodic self-imaging image is obtained, the spatial period of the hole array is less than or equal to the wavelength of the plasmons, namely a is less than or equal to lambda 0 。
10. The measurement method of the picometer-scale micro-displacement sensor based on surface plasmon self-imaging according to claim 7, wherein the measurement method comprises the following steps of: the wavelength of the plasmons and the incident light wavelength satisfy the following relation:
the epsilon is the dielectric function of the metal at the SPP oscillation frequency.
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| CN202310742595.7A CN116793225A (en) | 2023-06-21 | 2023-06-21 | Picometer-level micro-displacement sensor based on surface plasmon self-imaging |
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| CN202310742595.7A CN116793225A (en) | 2023-06-21 | 2023-06-21 | Picometer-level micro-displacement sensor based on surface plasmon self-imaging |
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