CN116780140A - Quasi-two-dimensional planarization circulator/isolator - Google Patents
Quasi-two-dimensional planarization circulator/isolator Download PDFInfo
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- CN116780140A CN116780140A CN202311085848.4A CN202311085848A CN116780140A CN 116780140 A CN116780140 A CN 116780140A CN 202311085848 A CN202311085848 A CN 202311085848A CN 116780140 A CN116780140 A CN 116780140A
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- circulator
- quasi
- isolator
- ferrite
- microstrip
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- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 47
- 238000001465 metallisation Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 8
- 230000005350 ferromagnetic resonance Effects 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 14
- 230000010354 integration Effects 0.000 abstract description 6
- 229910000831 Steel Inorganic materials 0.000 abstract description 4
- 239000010959 steel Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000009897 systematic effect Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
- H01P1/383—Junction circulators, e.g. Y-circulators
- H01P1/387—Strip line circulators
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- Non-Reversible Transmitting Devices (AREA)
Abstract
The application discloses a quasi-two-dimensional planarization circulator/isolator, which belongs to the technical field of microwave ferrite devices and comprises ferrite, a microstrip radio frequency circuit and back metallization. The application uses the high anisotropic field of the low-loss hexagonal gyromagnetic material to replace externally-added magnetic steel, and combines a microstrip radio frequency circuit matched with the magnetic steel to realize the quasi-two-dimensional and planar of the circulator, thereby greatly reducing the size and weight of the device; compared with the existing same-frequency-band microstrip circulator/isolator, the size and weight of the device can be reduced by about 90%, the miniaturization, integration and low cost of a complete machine system are facilitated, and systematic integration with a semiconductor device can be realized.
Description
Technical Field
The application relates to the technical field of microwave ferrite devices, in particular to a quasi-two-dimensional planarization circulator/isolator.
Background
Ferrite non-dissimilar devices are very important in microwave technology and have wide application in the fields of medical treatment, communication, radar, electronic countermeasure, etc. Along with the development of microwave technology, the integration level of a modern complete machine system is higher and higher, and miniaturization, integration and light weight of ferrite components are urgent.
Gyromagnetic materials used by the traditional circulator/isolator are spinel type and/or garnet type, as the two ferrite types belong to a cubic crystal system, the anisotropic field is smaller, and the prepared device needs to be externally provided with a permanent magnet to provide a constant magnetic field, and typically comprises; the magnetic field compensation device comprises an iron bottom plate (the functions of magnetic homogenization and protection), ferrite back metallization (grounding), ferrite, a microstrip radio frequency circuit (all of low-field design and complex matching design), a dielectric layer, a permanent magnet and possibly a compensation sheet; the circulator/isolator with the structure has large volume and weight, the size of the device in Ka frequency band is generally more than or equal to 4.5mm multiplied by 2.5mm, the size in the height direction is as high as 2.5mm, and the circulator/isolator is of a typical three-dimensional structure and is difficult to further miniaturize, so that the requirement of a system on the miniaturization planarization of the device is difficult to meet.
Disclosure of Invention
The present application is directed to a design of a quasi-two-dimensional planed circulator/isolator to solve the above-mentioned problems.
In order to achieve the above purpose, the technical scheme adopted by the application is as follows: a quasi-two-dimensional planarization circulator/isolator is composed of a ferrite substrate, a microstrip radio frequency circuit and ferrite back metallization:
the ferrite substrate is hexagonal M-shaped ferrite with low loss and high remanence ratio, preferably has saturation magnetization of 4000Gs, remanence ratio of more than or equal to 0.88, ferromagnetic resonance line width of less than or equal to 300Oe, coercive force of more than or equal to 2000Oe, dielectric constant of 23 and dielectric loss of less than or equal to 0.005; for example, baFe as the main body 12 O 19 Hexagonal M-type ferrite of (c); the preparation process adopts the traditional ferrite preparation sintering process (namely the steps of weighing, primary ball milling, presintering, secondary ball milling, wet-pressing magnetic field forming, sintering and the like), and the preparation technology can effectively regulate and control the remanence ratio and the ferromagnetism co-sintering, which are known to the skilled manVibration line width, coercive force and other parameters. The higher the remanence ratio is, the smaller the loss is introduced by the non-uniform magnetization of the magnetic moment of the ferrite substrate of the device; the smaller the ferromagnetic resonance linewidth, the lower the magnetic loss of the device; the smaller the dielectric loss, the smaller the electrical loss of the device; the larger the coercivity, the smaller the influence of the environment on the device; according to the design principle of the microwave device, the dielectric constant is high, and the smaller the in-plane size of the device is; the microstrip radio frequency circuit comprises a central conductor, ports and microstrip lines, wherein the central conductor is in an equilateral triangle or a circle shape, the ports are Y-shaped three ports, the central conductor is connected with the ports through the microstrip lines with the same width, matching transformation is not needed, and the circuit design is simpler;
through a large number of experiments, the inventor of the application innovatively adopts the hexagonal gyromagnetic material as a ferrite substrate material of the circulator/isolator, and the hexagonal gyromagnetic material has a large anisotropic field, so that a stable magnetic field can be provided after the hexagonal gyromagnetic material is magnetized, thereby replacing an externally applied magnetic field, reducing the volume and the quality of a device and realizing the quasi-two-dimensional planarization of the device; and the higher cut-off frequency of the hexagonal gyromagnetic material is more beneficial to the application of the device under high frequency.
The application is based on ferrite made of hexagonal gyromagnetic material, and is matched with a special microstrip radio frequency circuit design to obtain a quasi-two-dimensional planarization circulator with remarkably reduced size, especially thick bottom. Compared with the traditional microstrip same-frequency circulator, the size and weight of the microstrip same-frequency circulator can be reduced by 90%, and the microstrip same-frequency circulator can be systematically integrated with a semiconductor device, so that miniaturization of a radar, communication and other receiving and transmitting ends is realized.
The port form can be GSG (group-signal-group), or can be a common microstrip line form; the device does not need to be externally provided with a permanent magnet; the ferrite needs to be oriented, the orientation direction is perpendicular to the surface of the substrate, the higher the orientation degree is, the better the two surfaces of the substrate need to be polished; the adhesion of the circuit can be improved after polishing, one surface of the device is a microstrip circuit, and the other surface is metalized and grounded, and the device is generally manufactured by a magnetron sputtering mode.
The device is designed in a high-field design.
As a preferable technical scheme: the ferrite residual magnetic ratio is more than or equal to 0.9, and the smaller the ferromagnetic resonance line width is, the better the ferrite residual magnetic ratio is.
Compared with the prior art, the application has the advantages that: the application uses the high anisotropic field of the low-loss hexagonal gyromagnetic material to replace externally-added magnetic steel, and combines a microstrip radio frequency circuit matched with the magnetic steel to realize the quasi-two-dimensional and planar of the circulator, thereby greatly reducing the size and weight of the device; compared with the existing same-frequency-band microstrip circulator/isolator, the size and weight of the device can be reduced by about 90%, the miniaturization, integration and low cost of a complete machine system are facilitated, and systematic integration with a semiconductor device can be realized.
Drawings
Fig. 1 is a block diagram of a quasi-two-dimensional planarization circulator device according to embodiment 1 of the application:
FIG. 2 shows the S parameters of embodiment 1 of the present application, including the insertion loss and isolation of each port;
in the figure: 1. a ferrite substrate; 2. a microstrip radio frequency circuit; 3. and (5) metallization of the back surface of the ferrite.
Detailed Description
The application will be further described with reference to the accompanying drawings.
Example 1:
referring to fig. 1, a quasi two-dimensional planarization circulator is composed of a ferrite substrate 1, a microstrip radio frequency circuit 2 and a ferrite back metallization 3, in this embodiment, only the matching structure of the material of the ferrite substrate 1 and the microstrip radio frequency circuit 2 is improved, and preferably both are improved at the same time, and compared with the original circulator, the ferrite back metallization 3 has no change:
in the embodiment, the ferrite is hexagonal M-shaped ferrite with low loss and high remanence ratio, and the main body is BaFe 12 O 19 The saturation magnetization intensity is 4000Gs, the remanence ratio is 0.9, the ferromagnetic resonance line width is 300Oe, the coercive force is about 2500Oe, the dielectric constant is 23, the dielectric loss is 0.005, and the orientation direction is the direction c; the ferrite substrate 1 is perpendicular to the orientation directionThe ferrite substrate 1 is polished on both sides, and in fig. 1, XY represents a two-dimensional coordinate axis;
in the embodiment, the device adopts a high-field design, and the microstrip radio frequency circuit adopts three ports; the central conductor adopts an equilateral triangle, the outer circle radius of the equilateral triangle is required to be matched with the frequency of the device design, and the radius is 0.35mm; the port and the center conductor are connected by microstrip lines of equal width, the width being 0.11mm.
In this embodiment, the device has an operating band in the Ka band and a device size of 3.5mm ×3.5mm×0.22mm.
In the embodiment, the working frequency band of the device is in the Ka band, the insertion loss is less than or equal to 1.0dB, the isolation is more than or equal to 15dB, and the bandwidth is more than or equal to 2GHz, as shown in figure 2.
Comparative example 1:
in this comparative example, the ferrite is hexagonal M-type ferrite, and its main body is BaFe 12 O 19 The residual magnetic ratio was made to be 0.88, the ferroresonance line width was 500Oe, and other parameters were the same as in example 1 by the adjustment of the conventional manufacturing process.
In the comparative example, the working frequency band of the device is in Ka band, the insertion loss is less than or equal to 1.5 and dB, the isolation is more than or equal to 15dB, the bandwidth is more than or equal to 1.5GHz, and the insertion loss and the bandwidth of the device are obviously deteriorated.
Comparative example 2:
in this comparative example, the ferrite was a hexagonal M-type ferrite having a low loss and a high remanence ratio, the device radius was 0.4mm, and the remaining parameters were the same as in example 1.
In the comparative example, the working frequency band of the device is in the Ka band, the insertion loss is less than or equal to 1.2dB, the isolation is more than or equal to 15dB, the bandwidth is more than or equal to 0.8GHz, the bandwidth of the device is obviously reduced, and the center frequency is shifted towards low frequency.
Comparative example 3:
in this comparative example, the ferrite was a hexagonal M-type ferrite having a low loss and a high remanence ratio, the microstrip line connection width was 0.15mm, and the remaining parameters were the same as those in example 1.
In the comparative example, the working frequency band of the device is in the Ka band, the insertion loss is less than or equal to 1.8dB, the isolation is more than or equal to 15dB, the bandwidth is more than or equal to 0.5GHz, and the bandwidth of the device is obviously deteriorated.
For the radius, a certain deviation of about 0.35mm can be realized, for example, 0.33mm,0.34mm and 0.36mm, but the corresponding center frequency has a certain deviation, meanwhile, the device performance is not good with the radius of 0.35mm, and 0.35mm is an optimal value under the condition that other parameters are unchanged.
It should be noted that, besides the ferrite material type, the microstrip radio frequency circuit structure is also an application point of the present application, and the conventional microstrip devices are all low-field design devices, and the circuit is completely different from the present application, so if the ferrite material of the present application is adopted, and meanwhile, the conventional low-field design circuit is adopted, the function of the device cannot be realized at all, because the ferrite material of the present application has a high anisotropy field, and the conventional microstrip device material does not have a high anisotropy field.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (6)
1. The quasi-two-dimensional planarization circulator/isolator is characterized by comprising a ferrite substrate (1), a microstrip radio frequency circuit (2) and ferrite back surface metallization (3):
wherein the ferrite substrate (1) is hexagonal M-type ferrite;
the microstrip radio frequency circuit (2) comprises a central conductor (21), ports (22) and microstrip lines (23), wherein the central conductor (21) is in an equilateral triangle shape or a round shape, the ports (22) are Y-shaped three ports, and the central conductor (21) is connected with the ports (22) through the microstrip lines (23) with the same width.
2. A quasi-two-dimensional planarization circulator/isolator as claimed in claim 1, wherein: the saturation magnetization intensity of the hexagonal M-type ferrite is 4000Gs, the remanence ratio is more than or equal to 0.88, the ferromagnetic resonance line width is less than or equal to 300Oe, the coercive force is more than or equal to 2000Oe, the dielectric constant is 23, and the dielectric loss is less than or equal to 0.005.
3. A quasi-two-dimensional planarization circulator/isolator as claimed in claim 1, wherein: the ferrite substrate (1) is oriented, and the orientation direction is perpendicular to the surface of the ferrite substrate (1).
4. A quasi-two-dimensional planarization circulator/isolator as claimed in claim 1, wherein: the ferrite substrate (1) is polished on both sides.
5. A quasi-two-dimensional planarization circulator/isolator as claimed in claim 1, wherein: the port (22) is in the form of a GSG or a conventional microstrip line.
6. A quasi-two-dimensional planarization circulator/isolator as claimed in claim 1, wherein: the dimension of the quasi-two-dimensional planarization circulator is less than or equal to 3.5X3.5X0.25 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311085848.4A CN116780140A (en) | 2023-08-28 | 2023-08-28 | Quasi-two-dimensional planarization circulator/isolator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311085848.4A CN116780140A (en) | 2023-08-28 | 2023-08-28 | Quasi-two-dimensional planarization circulator/isolator |
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| CN116780140A true CN116780140A (en) | 2023-09-19 |
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| CN202311085848.4A Pending CN116780140A (en) | 2023-08-28 | 2023-08-28 | Quasi-two-dimensional planarization circulator/isolator |
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| US8344820B1 (en) * | 2011-01-17 | 2013-01-01 | The Boeing Company | Integrated circulator for phased arrays |
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