CN116779550A - Composite substrate and method for manufacturing same - Google Patents
Composite substrate and method for manufacturing same Download PDFInfo
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- CN116779550A CN116779550A CN202210263542.2A CN202210263542A CN116779550A CN 116779550 A CN116779550 A CN 116779550A CN 202210263542 A CN202210263542 A CN 202210263542A CN 116779550 A CN116779550 A CN 116779550A
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- substrate
- intermediate layer
- carrier
- composite substrate
- carrier plate
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 239000002131 composite material Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 229910002601 GaN Inorganic materials 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000011224 oxide ceramic Substances 0.000 claims description 6
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 238000005259 measurement Methods 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a composite substrate and a manufacturing method thereof, and the composite substrate and the manufacturing method thereof provided by the invention not only ensure good bonding acting force between layers, but also regulate and control the difference of thermal expansion coefficients between the layers by arranging a plurality of intermediate layers between a carrier plate and the substrate, thereby avoiding the defects of easy breakage and the like of the substrate.
Description
Technical Field
The present invention relates to a composite substrate and a method for manufacturing the same, but is not limited thereto.
Background
Power devices (Power devices) are important components for Power transmission and conversion; the application fields are very wide, and the energy is realized by small-power consumer electronic products, even high-power transportation, green energy sources, industrial motors and the like. In addition to the fact that power devices are mostly manufactured using silicon as a substrate, wide bandgap compound semiconductors are also attracting attention in power device applications, such as: silicon carbide, gallium oxide, gallium nitride, and the like.
However, in consideration of physical properties and chemical properties of the substrate in terms of materials, production cost, and other factors, a composite substrate structure formed by compounding a plurality of materials is sometimes adopted in practice, so that the product has more excellent competitiveness in various aspects.
Disclosure of Invention
This summary is intended to provide a simplified summary of the invention in order to provide a basic understanding of the invention to a reader. This summary is not an extensive overview of the invention and is intended to neither identify key or critical elements of the embodiments of the invention nor delineate the scope of the invention.
In view of the foregoing, the present inventors have found that bonding of Van der Waals forces may be reduced when the same material is used between different layers of the composite material; when different materials are used between different layers, cracking may occur due to different expansion coefficients.
In view of the above, one aspect of the present invention provides a composite substrate, which includes a substrate, a carrier, and a plurality of intermediate layers. The carrier plate is arranged corresponding to the substrate, and the plurality of intermediate layers are arranged between the substrate and the carrier plate.
According to one embodiment of the present invention, the substrate is a polycrystalline or monocrystalline material and its composition is a nitride ceramic, an oxide ceramic, a carbide ceramic, silicon carbide, gallium nitride, sapphire (alumina), gallium nitride, gallium arsenide, or gallium oxide.
According to one embodiment of the present invention, the carrier is a polycrystalline or monocrystalline material and its composition is nitride ceramic, oxide ceramic, carbide ceramic, silicon carbide, gallium nitride, sapphire (alumina), gallium nitride, gallium arsenide, or gallium oxide.
According to one embodiment of the invention, the intermediate layer is polycrystalline or monocrystalline and comprises a nitride, oxide, oxynitride or carbide.
According to an embodiment of the present invention, the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer have different compositions or the same composition and different crystallization.
In another aspect, the present invention provides a method for manufacturing a composite substrate, including the steps of: firstly, providing a substrate and a carrier plate; arranging the carrier plate in parallel with the substrate, and arranging a plurality of intermediate layers between the substrate and the carrier plate; and forming a thin film on the carrier.
According to an embodiment of the present invention, the substrate and the carrier have different compositions or the same composition but different crystals.
According to an embodiment of the present invention, the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer have different compositions or the same composition and different crystallization.
According to one embodiment of the invention, the thickness of the film is 0.5 nm to 1000 μm.
In yet another aspect, the present invention provides a method for manufacturing a composite substrate, comprising the steps of: providing a substrate and a carrier plate; forming at least one intermediate layer on the substrate, and sequentially forming a film and at least one intermediate layer on the carrier; bonding the substrate and the carrier plate through the intermediate layer; and removing, thinning or cutting the carrier plate.
According to an embodiment of the invention, the substrate and the carrier have different compositions or the same composition and different crystals.
The invention provides the following advantages: by arranging a plurality of intermediate layers between the carrier plate and the substrate, the composite substrate provided by the invention not only ensures good bonding acting force between the layers, but also regulates and controls the difference of thermal expansion coefficients between the layers, thereby avoiding the defects of easy breakage of the substrate and the like.
Drawings
The foregoing and other objects, features, advantages and embodiments of the invention will be apparent from the following description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic layer structure of a composite substrate;
fig. 2 to 4 are schematic views of layer structures according to various embodiments of the present invention.
Reference numerals: 100,200a,200b,200c: a composite substrate; 110,210: a carrier plate; 120: an intermediate layer; 130,230: a substrate; 220a: a first intermediate layer; 220b: a second intermediate layer; 220c: a third intermediate layer; 220d: and a fourth intermediate layer.
Various features and elements are not drawn to scale in accordance with conventional practice in the drawings in a manner that best serves to illustrate the specific features and elements that are pertinent to the present invention. In addition, like elements and components are referred to by the same or similar reference numerals among the different drawings.
Detailed Description
For the purposes of promoting an understanding of the principles of the invention, reference will now be made to embodiments of the invention and specific examples, but will be used to describe the same. In this specification and the claims that follow, except where the context requires otherwise, the word "a" or "an" will be understood to mean a plurality. In addition, in this specification and the claims that follow, unless otherwise indicated, "disposed on" or "disposed on" can be construed as directly or indirectly contacting a surface of something, the definition of which should be construed as meaning in the context of the preceding and following paragraphs and ordinary skill in the art to which this specification pertains.
Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. However, any numerical value inherently contains certain standard deviations found in their respective testing measurements. As used herein, "about" generally means that the actual value is within plus or minus 10%, 5%, 1% or 0.5% of a particular value or range. Alternatively, the term "about" means that the actual value falls within an acceptable standard deviation of the average value, as determined by one of ordinary skill in the art to which the present invention pertains. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present specification and attached claims are approximations that may vary depending upon the desired properties. At least these numerical parameters should be construed as the number of significant digits and by applying ordinary rounding techniques.
The invention provides a composite substrate, which comprises a substrate, a carrier plate and a plurality of intermediate layers. The carrier plate is arranged corresponding to the substrate, and the plurality of intermediate layers are arranged between the substrate and the carrier plate.
The "substrate" as described herein is a polycrystalline or monocrystalline material, and its composition is a ceramic or semiconductor material; wherein "ceramic" refers to a compound of metal and non-metal, and the inorganic non-metal solid material subjected to artificial high temperature treatment includes silicate, oxide, carbide, nitride, sulfide, boride, etc., preferably including but not limited to, selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide and silicon nitride. Specifically, the substrate has a composition selected from the group consisting of nitride ceramics, oxide ceramics, carbide ceramics, silicon carbide, sapphire (aluminum oxide), gallium nitride, gallium arsenide, and gallium oxide.
The "carrier" as described herein is a polycrystalline or monocrystalline material, and its composition is a ceramic or semiconductor material; wherein "ceramic" refers to a compound of metal and non-metal, and the inorganic non-metal solid material subjected to artificial high temperature treatment includes silicate, oxide, carbide, nitride, sulfide, boride, etc., preferably including but not limited to, selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide and silicon nitride. Specifically, the carrier plate has a composition selected from the group consisting of nitride ceramics, oxide ceramics, carbide ceramics, silicon carbide, sapphire (aluminum oxide), gallium nitride, gallium arsenide, and gallium oxide.
The substrate and the carrier are made of the same or different materials. According to some embodiments of the present invention, the substrate and the carrier are made of different materials, so that the composite substrate of the present invention has good bonding force.
The "intermediate layer" as described herein is a polycrystalline or monocrystalline material and its composition is an oxide, nitride, carbide or oxynitride; specifically, the composition of the intermediate layer is selected from the group consisting of aluminum oxide, silicon oxide, gallium oxide, titanium oxide, aluminum nitride, silicon nitride, gallium nitride, silicon carbide, aluminum oxynitride, silicon oxynitride, and gallium oxynitride.
According to some embodiments of the invention, the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer have different compositions or the same composition and different crystallization.
Method of manufacture
The invention provides a manufacturing method of a composite substrate, which comprises the following steps: providing a substrate and a carrier plate; arranging the carrier plate in parallel with the substrate, and arranging a plurality of intermediate layers between the substrate and the carrier plate; and forming a thin film on the carrier. According to a preferred embodiment of the present invention, the substrate and the carrier have different compositions. According to the preferred embodiment of the present invention, the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer have different compositions or the same composition and different crystallization.
According to various embodiments, the present invention also provides another method for manufacturing a composite substrate, which includes the following steps: providing a substrate and a carrier plate; forming at least one intermediate layer on the substrate, and sequentially forming a film and at least one intermediate layer on the carrier; bonding the substrate and the carrier plate through the intermediate layer; and removing, thinning or cutting the carrier plate. According to the requirements of the user, the step of removing, thinning or cutting the carrier plate can be replaced by forming a film on the carrier plate. According to a preferred embodiment of the present invention, the carrier and the substrate have different compositions.
In detail, the thickness of the substrate and the carrier plate is in the range of 100 to 1500 micrometers, for example: 100. 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400 or 1500 microns. The thickness of the intermediate layer is between about 10 and 200 nanometers, for example: 10. 50, 100, 150 or 200 nanometers. As used herein, "film" refers to a film body having a thickness of 0.5 nm to 1000 microns, such as, but not limited to: 0.5 nm, 100 microns or 1000 microns.
In terms of manufacturing processes, the fabrication process of the substrate layer such as "disposing" or "forming" described herein employs various methods suitable in the art, including but not limited to chemical vapor deposition (chemical vapor deposition; CVD), low Pressure Chemical Vapor Deposition (LPCVD), atmospheric pressure chemical vapor deposition (atmospheric pressure CVD; APCVD), ultra-high vacuum chemical vapor deposition (ultrahigh vacuum CVD; UHVCVD), atomic layer deposition (atomic layer deposition; ALD), molecular layer deposition (molecular layer deposition; MLD), plasma chemical vapor deposition (plasma enhanced CVD; PECVD), metal-organic CVD (MOCVD), molecular beam epitaxy (molecular beam epitaxy; MBE), sputtering, or the like, or combinations thereof.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The following description, in conjunction with the present drawings, presents more specific examples or comparative examples of the present invention, which are provided to illustrate the present invention more clearly and are not intended to limit the scope of the present invention.
Fig. 1 shows a schematic layer structure of a composite substrate 100. Referring to fig. 1, the composite substrate 100 includes a carrier 110 and a substrate 130 disposed opposite thereto, and only an intermediate layer 120 is disposed between the substrate 130 and the carrier 110. Specifically, the material of the carrier 110 is silicon carbide; the material of the substrate 130 is aluminum nitride; and the material of the intermediate layer 120 is alumina.
Fig. 2 is a schematic layer structure of a composite substrate 200a according to an embodiment of the invention. Referring to fig. 2, the composite substrate 200a includes a carrier 210 and a substrate 230 disposed opposite thereto, and a plurality of intermediate layers are disposed between the substrate 230 and the carrier 210, and are a first intermediate layer 220a and a second intermediate layer 220b respectively. Specifically, the material of the carrier 110 is silicon carbide; the material of the substrate 130 is aluminum nitride. The first intermediate layer 220a and the second intermediate layer 220b are made of silicon oxide or aluminum oxide, respectively, and can be made of the same material, or can be made of different materials or have the same composition and different crystallization; in this embodiment, the material of the first intermediate layer 220a is silicon oxide, and the material of the second intermediate layer 220b is aluminum oxide.
Fig. 3 is a schematic layer structure of a composite substrate 200b according to an embodiment of the invention. Referring to fig. 3, the composite substrate 200b includes a carrier 210 and a substrate 230 disposed opposite thereto, and a plurality of intermediate layers are disposed between the substrate 230 and the carrier 210, and are respectively a first intermediate layer 220a, a second intermediate layer 220b and a third intermediate layer 220c. Specifically, the material of the carrier 110 is silicon carbide; the material of the substrate 130 is aluminum nitride. The materials of the first middle layer 220a, the second middle layer 220b and the third middle layer 220c are respectively silicon oxide or aluminum oxide, and the three layers can be made of the same material or have the same composition and different crystallization, or can be made of different materials, or are formed by overlapping two different materials; in the present embodiment, the material of the first intermediate layer 220a is silicon oxide, the material of the second intermediate layer 220b is aluminum oxide, and the material of the third intermediate layer 220c is silicon oxide.
Fig. 4 is a schematic layer structure of a composite substrate 200c according to an embodiment of the invention. Referring to fig. 4, the composite substrate 200c includes a carrier 210 and a substrate 230 disposed opposite thereto, and a plurality of intermediate layers are disposed between the substrate 230 and the carrier 210, and are a first intermediate layer 220a, a second intermediate layer 220b, a third intermediate layer 220c and a fourth intermediate layer 220d, respectively. Specifically, the material of the carrier 110 is silicon carbide; the material of the substrate 130 is aluminum nitride. The materials of the first middle layer 220a, the second middle layer 220b, the third middle layer 220c and the fourth middle layer 220d are respectively silicon oxide or aluminum oxide, and the three layers can be made of the same material, or can be made of different materials, or are formed by overlapping two different materials; in the present embodiment, the material of the first intermediate layer 220a is silicon oxide, the material of the second intermediate layer 220b is aluminum oxide, the material of the third intermediate layer 220c is silicon oxide, and the material of the fourth intermediate layer 220d is aluminum oxide.
Determination of tensile Strength
The present invention herein measures the tensile strength of the composite substrates 100,200a,200b, and 200 c. Specifically, the measurement flow is as follows: the carrier or the substrate is welded with at least one stretching wire, and the stretching wire is stretched by a stretching machine to obtain the stretching strength.
According to the result of the measurement, the sample of the composite substrate 100 had a value of about 5kgf/cm 2 Is a tensile strength of (a); the sample of the composite substrate 200a had a thickness of about 7kgf/cm 2 Is a tensile strength of (a); the sample of the composite substrate 200b had a thickness of about 8kgf/cm 2 Is a tensile strength of (a); composite substrate 200c has a sample of about 8.3kgf/cm 2 Is a tensile strength of the steel sheet.
According to the measurement results of the embodiment of the invention, it can be understood that by arranging a plurality of intermediate layers between the carrier plate and the substrate, especially when the materials of the carrier plate and the substrate are different and the plurality of intermediate layers are formed by overlapping different materials, the composite substrate provided by the invention not only ensures good bonding acting force between the layers, but also regulates and controls the difference of thermal expansion coefficients between the layers, thereby improving the tensile strength of the whole composite substrate and avoiding the defects of easy breakage of the substrate.
While the invention has been described in detail in connection with the preferred embodiments thereof, it should be understood that the invention is not limited thereto, but is intended to cover modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
Thus, various embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concepts of the present disclosure, some details known in the art are not described. How to implement the solutions disclosed herein will be fully apparent to those skilled in the art from the above description.
Although some specific embodiments of the present disclosure have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present disclosure. It will be understood by those skilled in the art that the foregoing embodiments may be modified and equivalents substituted for elements thereof without departing from the scope and spirit of the disclosure. The scope of the present disclosure is defined by the appended claims.
Claims (11)
1. A composite substrate, comprising:
a substrate;
a carrier plate, which is arranged corresponding to the substrate; and
a plurality of intermediate layers disposed between the substrate and the carrier.
2. The composite substrate of claim 1, wherein the substrate is a polycrystalline or monocrystalline material and comprises a nitride ceramic, an oxide ceramic, a carbide ceramic, silicon carbide, sapphire, gallium nitride, gallium arsenide, or gallium oxide.
3. The composite substrate of claim 1, wherein the carrier is a polycrystalline or monocrystalline material and comprises a nitride ceramic, an oxide ceramic, a carbide ceramic, silicon carbide, sapphire, gallium arsenide, gallium nitride, or gallium oxide.
4. The composite substrate of claim 1, wherein the intermediate layer is polycrystalline or monocrystalline and comprises a nitride, oxide, oxynitride or carbide.
5. The composite substrate according to claim 4, wherein the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer are different in composition or same in composition and different in crystallization.
6. A method of manufacturing a composite substrate, comprising the steps of:
providing a substrate and a carrier plate;
arranging the carrier plate in parallel with the substrate, and arranging a plurality of intermediate layers between the substrate and the carrier plate; and
the carrier plate is formed into a thin film.
7. The method of manufacturing a composite substrate according to claim 6, wherein the substrate and the carrier have different components or the same components and different crystals.
8. The method according to claim 6, wherein the plurality of intermediate layers are disposed by overlapping a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer have different compositions or the same composition and different crystals.
9. The method of manufacturing a composite substrate according to claim 6, wherein the thickness of the thin film is 0.5 nm to 1000 μm.
10. A method of manufacturing a composite substrate, comprising the steps of:
providing a substrate and a carrier plate;
forming at least one intermediate layer on the substrate, and sequentially forming a film and at least one intermediate layer on the carrier;
bonding the substrate and the carrier plate through the intermediate layer; and
the carrier is removed, thinned or cut.
11. The method according to claim 10, wherein the substrate and the carrier have different compositions or the same composition and different crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210263542.2A CN116779550A (en) | 2022-03-09 | 2022-03-09 | Composite substrate and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210263542.2A CN116779550A (en) | 2022-03-09 | 2022-03-09 | Composite substrate and method for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116779550A true CN116779550A (en) | 2023-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210263542.2A Pending CN116779550A (en) | 2022-03-09 | 2022-03-09 | Composite substrate and method for manufacturing same |
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| Country | Link |
|---|---|
| CN (1) | CN116779550A (en) |
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2022
- 2022-03-09 CN CN202210263542.2A patent/CN116779550A/en active Pending
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