CN116774485A

CN116774485A - Reflective array substrate, manufacturing method thereof and reflective liquid crystal display panel

Info

Publication number: CN116774485A
Application number: CN202310745692.1A
Authority: CN
Inventors: 李振行; 李菁
Original assignee: InfoVision Optoelectronics Kunshan Co Ltd
Current assignee: InfoVision Optoelectronics Kunshan Co Ltd
Priority date: 2023-06-21
Filing date: 2023-06-21
Publication date: 2023-09-19

Abstract

The invention provides a reflective array substrate, which comprises a first substrate and a reflective color blocking layer arranged on the first substrate, wherein the reflective color blocking layer comprises a plurality of green reflective color blocking blocks, a plurality of blue reflective color blocking blocks and a plurality of red reflective color blocking blocks; each green reflective color block comprises a first molybdenum oxide block, a silicon nitride block and a first metal aluminum block which are sequentially stacked up and down, each blue reflective color block comprises a second molybdenum dioxide block and a second metal aluminum block which are stacked up and down, and each red reflective color block comprises a third molybdenum oxide block and a metal copper block which are stacked up and down; the thickness of the first molybdenum oxide block is 50-70 nm, the thickness of the second molybdenum oxide block is 70-100 nm, and the thickness of the third molybdenum oxide block is 20-30 nm; the green light-reflecting color block, the blue light-reflecting color block and the red light-reflecting color block can reflect ambient light to form green light, blue light and red light respectively. The invention also provides a manufacturing method of the reflective array substrate and a reflective liquid crystal display panel.

Description

Reflective array substrate, manufacturing method thereof and reflective liquid crystal display panel

Technical Field

The invention relates to the technical field of display, in particular to a reflective array substrate, a manufacturing method thereof and a reflective liquid crystal display panel.

Background

Liquid crystal display devices (Liquid Crystal Display, abbreviated as LCDs) are a mainstream product in the market with their excellent performance and mature technology. Liquid crystal display devices are classified according to the type of light source, and may be classified into transmissive, reflective, and transflective (also referred to as transflective). The liquid crystal display device mainly comprises a color film substrate and a TFT (Thin Film Transistor ) array substrate which are oppositely arranged, and liquid crystal is filled between the color film substrate and the TFT array substrate. The existing reflective liquid crystal display device and transflective liquid crystal display device can be applied outdoors to make full use of ambient light, i.e., to reflect external light to obtain all light sources (reflective) or part of light sources (transflective) required for displaying images.

As shown in fig. 1, the conventional reflective liquid crystal display panel includes an array substrate 51, a counter substrate 52 provided opposite to the array substrate 51, and a liquid crystal layer 53 provided between the array substrate 51 and the counter substrate 52. The array substrate 51 is provided with a reflecting layer 511 for reflecting external light, the reflecting layer 511 comprises a flat layer 512 and a metal reflecting layer 513 which are stacked, and the metal reflecting layer 513 is arranged on the flat layer 512 in a copying manner; meanwhile, in order to achieve the effect of diffuse reflection (scattering light) to increase the exit angle of light and thus the viewing angle range, the reflective layer 511 is generally provided in an uneven structure. The counter substrate 52 is provided with a color resist layer 521 and a black matrix 522, the color resist layer 521 being used for realizing color display, and the black matrix 522 (BM) being mainly used for preventing light leakage.

Since the reflective liquid crystal display panel uses external ambient light as a light source, the intensity of the ambient light is generally weak, so the requirement on the light source utilization rate is high. However, in the reflective liquid crystal display panel, the color resist layer 521 and the black matrix 522 on the opposite substrate 52 block light, thereby greatly reducing the intensity of ambient light entering and exiting the display panel, and reducing the aperture ratio and the display brightness.

Disclosure of Invention

The invention aims to provide a reflective array substrate, wherein a reflective color resistance layer is arranged on the reflective array substrate, and can directly reflect ambient light into color light, so that the original color resistance layer and the original reflection layer are replaced, and the color resistance layer is not required to be arranged on an opposite substrate, so that the shielding of the color resistance layer on light is avoided, and the display brightness and the display effect are further improved.

The invention provides a reflective array substrate which is provided with a plurality of sub-pixels arranged in an array, wherein the sub-pixels comprise a plurality of first pixel units, a plurality of second pixel units and a plurality of third pixel units; the reflective array substrate comprises a first substrate and a reflective color blocking layer arranged on the first substrate, the reflective color blocking layer comprises a plurality of green reflective color blocking blocks, a plurality of blue reflective color blocking blocks and a plurality of red reflective color blocking blocks, and the green reflective color blocking blocks, the blue reflective color blocking blocks and the red reflective color blocking blocks are respectively arranged in the first pixel unit, the second pixel unit and the third pixel unit;

Each green reflective color block comprises a first molybdenum oxide block, a silicon nitride block and a first metal aluminum block which are sequentially stacked up and down, wherein the first molybdenum oxide block is positioned at one side of the silicon nitride block far away from the first substrate; each blue reflective color block comprises a second molybdenum dioxide block and a second metal aluminum block which are arranged in an up-down lamination mode, and the second molybdenum dioxide block is positioned on one side, away from the first substrate, of the second metal aluminum block; each red reflective color block comprises a third molybdenum oxide block and a metal copper block which are arranged in an up-down lamination mode, wherein the third molybdenum oxide block is positioned at one side, far away from the first substrate, of the metal copper block; the thickness of the first molybdenum oxide block is 50-70 nm, the thickness of the second molybdenum dioxide block is 70-100 nm, and the thickness of the third molybdenum oxide block is 20-30 nm; the green light-reflecting color block, the blue light-reflecting color block and the red light-reflecting color block can reflect ambient light to form green light, blue light and red light respectively.

In one implementation manner, the reflective array substrate further includes a plurality of pixel electrodes arranged in an array, the plurality of pixel electrodes are respectively disposed in the plurality of sub-pixels, and the pixel electrodes are located between the first substrate and the reflective color resist layer; the green light-reflecting color blocking blocks, the blue light-reflecting color blocking blocks and the red light-reflecting color blocking blocks are all arranged in a copying mode with the pixel electrodes, the green light-reflecting color blocking blocks, the blue light-reflecting color blocking blocks and the red light-reflecting color blocking blocks are respectively electrically connected with the corresponding pixel electrodes, and the green light-reflecting color blocking blocks, the blue light-reflecting color blocking blocks and the red light-reflecting color blocking blocks are mutually separated.

In one implementation manner, the reflective array substrate further comprises a first spacer layer arranged on the first substrate, the first spacer layer and the reflective color resistance layer are vertically and adjacently stacked, the first spacer layer is located on one side, close to the first substrate, of the reflective color resistance layer, the surface, close to one side of the reflective color resistance layer, of the first spacer layer is of an uneven structure, and the reflective color resistance layer is of an uneven structure.

In one implementation manner, the reflective array substrate further includes a first light shielding layer disposed on the first substrate, where the first light shielding layer is located at a side of the reflective color resist layer away from the first substrate, and the first light shielding layer and the reflective color resist layer are disposed at an upper-lower interval; the first shading layer comprises a plurality of first shading blocks which are arranged in an array, each first shading block comprises a fourth molybdenum oxide block and a third metal aluminum block which are arranged in an up-down lamination mode, the fourth molybdenum oxide block is located at one side, away from the first substrate, of the third metal aluminum block, and the thickness of the fourth molybdenum oxide block is 50-70 nm.

The invention also provides a manufacturing method of the reflective array substrate, which is used for manufacturing the reflective array substrate, and comprises the following steps:

Providing a first substrate, wherein the first substrate comprises a plurality of first areas, a plurality of second areas and a plurality of third areas, and the first areas, the second areas and the third areas are arranged in an array;

forming a first metal aluminum block, a second metal aluminum block and a metal copper block on a first region, a second region and a third region of the first substrate base plate respectively;

forming a silicon nitride block on the first metal aluminum block, forming a first molybdenum oxide block on the silicon nitride block, and sequentially stacking the first molybdenum oxide block, the silicon nitride block and the first metal aluminum block up and down to obtain a green reflective color block; forming a second molybdenum dioxide block on the second metal aluminum block, wherein the second molybdenum dioxide block and the second metal aluminum block are arranged in a vertically laminated mode, and a blue reflection color block is obtained; forming a third molybdenum oxide block on the metal copper block, wherein the third molybdenum oxide block and the metal copper block are arranged in a vertically laminated mode, and a red reflection color resistance block is obtained; the thickness of the first molybdenum oxide block is 50-70 nm, the thickness of the second molybdenum oxide block is 70-100 nm, and the thickness of the third molybdenum oxide block is 20-30 nm.

In one implementation, the first metal aluminum block, the second metal aluminum block, and the metal copper block on the first substrate base plate are manufactured by a lift-off process.

In one implementation, the first molybdenum oxide block, the second molybdenum oxide block and the third molybdenum oxide block are prepared by a plurality of etching processes, wherein the etching processes comprise molybdenum oxide layer coating, photoresist exposure, photoresist development and molybdenum oxide layer dry etching steps; in the etching process, photoresist on the first molybdenum oxide block, the second molybdenum oxide block and the third molybdenum oxide block is not removed; after etching, the photoresist on the first molybdenum oxide block, the second molybdenum oxide block and the third molybdenum oxide block is removed together.

The invention also provides a reflective liquid crystal display panel, which comprises the reflective array substrate, a counter substrate arranged opposite to the reflective array substrate and a liquid crystal layer arranged between the reflective array substrate and the counter substrate, wherein the counter substrate is not provided with a color resistance layer, and the reflective color resistance layer in the reflective array substrate is positioned on one side of the first substrate close to the counter substrate.

In one implementation manner, the opposite substrate comprises a second substrate, a second spacer layer and a common electrode are arranged on one side, close to the reflective array substrate, of the second substrate, the second spacer layer and the common electrode are adjacently stacked up and down, and the second spacer layer is positioned between the common electrode and the second substrate; the surface of the second isolation pad layer, which is close to one side of the public electrode, is of an uneven structure, and the public electrode is of an uneven structure.

In one implementation manner, the reflective array substrate further includes a first light shielding layer disposed on the first substrate, where the first light shielding layer is located at a side of the reflective color resist layer away from the first substrate, and the first light shielding layer and the reflective color resist layer are disposed at an upper-lower interval; the first light shielding layer comprises a plurality of first light shielding blocks arranged in an array, each first light shielding block comprises a fourth molybdenum oxide block and a third metal aluminum block which are arranged in a vertically stacked mode, the fourth molybdenum oxide block is positioned on one side, away from the first substrate, of the third metal aluminum block, and the thickness of the fourth molybdenum oxide block is 50-70 nm; the opposite substrate is not provided with a black matrix.

In an implementation manner, the opposite substrate comprises a second substrate, a second shading layer is arranged on one side, close to the reflective array substrate, of the second substrate, the second shading layer comprises a plurality of second shading blocks which are arranged in an array, each second shading block comprises a fifth molybdenum oxide block and a fourth metal aluminum block which are arranged in a vertically stacked mode, the fifth molybdenum oxide block is positioned on one side, close to the second substrate, of the fourth metal aluminum block, and the thickness of the fifth molybdenum oxide block is 50-70 nm; the opposite substrate is not provided with a black matrix.

According to the reflective array substrate provided by the invention, the reflective color blocking layer is arranged on the reflective array substrate, and comprises the plurality of green reflective color blocking blocks, the plurality of blue reflective color blocking blocks and the plurality of red reflective color blocking blocks, the green reflective color blocking blocks, the blue reflective color blocking blocks and the red reflective color blocking blocks can respectively reflect ambient light to form green light, blue light and red light, namely, the reflective color blocking layer can directly reflect the ambient light to form colored light, the effect of color display is realized, and the original color blocking layer and the original reflective layer are replaced, so that the color blocking layer is not required to be arranged on the opposite substrate, the blocking of the color blocking layer to light is avoided, and the transmittance and the utilization rate of the ambient light are improved on the basis of realizing color display, so that the display brightness and the display effect are improved.

Drawings

Fig. 1 is a schematic cross-sectional view of a reflective liquid crystal display panel in the prior art.

Fig. 2 is a schematic cross-sectional view of a reflective array substrate according to a first embodiment of the present invention.

Fig. 3a is a schematic cross-sectional view of a reflective liquid crystal display panel according to a first embodiment of the invention.

Fig. 3b is a schematic view of the optical path structure of fig. 3 a.

Fig. 4a is a schematic cross-sectional view of a reflective liquid crystal display panel according to a second embodiment of the invention.

Fig. 4b is a schematic view of the optical path structure of fig. 4 a.

Fig. 5a is a schematic cross-sectional view of a reflective liquid crystal display panel according to a third embodiment of the invention.

Fig. 5b is a schematic view of the optical path structure of fig. 5 a.

Fig. 6a is a schematic cross-sectional view of a reflective liquid crystal display panel according to a fourth embodiment of the invention.

Fig. 6b is a schematic view of the optical path structure of fig. 6 a.

Fig. 7a to 7o are schematic views illustrating a manufacturing process of the reflective array substrate according to the first embodiment of the invention.

Detailed Description

The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.

The terms "first," "second," "third," "fourth" and the like in the description and in the claims, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.

The terms upper, lower, left, right, front, rear, top, bottom and the like (if any) in the description and in the claims are used for descriptive purposes and not necessarily for describing relative positions of structures in the figures and in describing relative positions of structures. It should be understood that the use of directional terms should not be construed to limit the scope of the application as claimed.

First embodiment

As shown in fig. 2 to 3B, a first embodiment of the present application provides a reflective array substrate 1, which is provided with a plurality of sub-pixels arranged in an array, wherein the plurality of sub-pixels includes a plurality of first pixel units 10A, a plurality of second pixel units 10B and a plurality of third pixel units 10C. The reflective array substrate 1 includes a first substrate 11 and a reflective color blocking layer 16 disposed on the first substrate 11, where the reflective color blocking layer 16 includes a plurality of green reflective color blocking blocks 16A, a plurality of blue reflective color blocking blocks 16B and a plurality of red reflective color blocking blocks 16C, and the green reflective color blocking blocks 16A, the blue reflective color blocking blocks 16B and the red reflective color blocking blocks 16C are respectively disposed in the first pixel unit 10A, the second pixel unit 10B and the third pixel unit 10C.

Each of the green-reflecting color blocks 16A includes a first molybdenum oxide block 161, a silicon nitride block 162, and a first metal aluminum block 163, which are stacked one on top of the other, the first molybdenum oxide block 161 being located on a side of the silicon nitride block 162 away from the first substrate 11. Each blue light reflecting color block 16B includes a second molybdenum dioxide block 164 and a second metal aluminum block 165 which are disposed in a stacked manner up and down, the second molybdenum dioxide block 164 being located on a side of the second metal aluminum block 165 remote from the first substrate 11. Each red reflective color block 16C includes a third molybdenum oxide block 166 and a metal copper block 167 stacked one above the other, the third molybdenum oxide block 166 being located on a side of the metal copper block 167 away from the first substrate 11. The first molybdenum oxide block 161 has a thickness of 50nm to 70nm, the second molybdenum dioxide block 164 has a thickness of 70nm to 100nm, and the third molybdenum oxide block 166 has a thickness of 20nm to 30nm. The green light-reflecting color block 16A, the blue light-reflecting color block 16B and the red light-reflecting color block 16C can reflect the ambient light to form green light, blue light and red light, respectively, that is, the green light, the blue light and the red light can be reflected respectively after the ambient light is irradiated onto the green light-reflecting color block 16A, the blue light-reflecting color block 16B and the red light-reflecting color block 16C.

According to the embodiment, the thickness of the molybdenum oxide layer is regulated, and different metal layers and silicon nitride layers are matched, so that red, green and blue color reflection can be realized, namely, the original reflective layer on the reflective array substrate and the original color resistance layer on the opposite substrate are replaced, and the light reflectivity can reach more than 50%. The first molybdenum oxide block 161 is matched with the silicon nitride block 162 and the first metal aluminum block 163, and the thickness of the first molybdenum oxide block 161 is 50 nm-70 nm, so that the first molybdenum oxide block 161 can reflect ambient light into green light; the second molybdenum dioxide block 164 is matched with the second metal aluminum block 165, and the thickness of the second molybdenum dioxide block 164 is 70 nm-100 nm, so that the environment light can be reflected into blue light; the third molybdenum oxide block 166 is matched with the metal copper block 167, and the thickness of the third molybdenum oxide block 166 is 20 nm-30 nm, so that the third molybdenum oxide block 166 can reflect ambient light into red light.

Specifically, as shown in fig. 2 to 3b, when the ambient light irradiates on the green reflective color block 16A, the incident light sequentially enters the three-layer medium of the first molybdenum oxide block 161, the silicon nitride block 162 and the first metal aluminum block 163, three reflected waves are formed, and the three reflected waves interfere with each other to form a spectrum of a green wave band, so that a green display effect can be seen visually. Similarly, when the ambient light irradiates the blue reflective color block 16B, the incident light sequentially enters the two layers of media of the second molybdenum dioxide block 164 and the second metal aluminum block 165, two reflected waves are formed, the two reflected waves interfere with each other to form a spectrum of a blue wave band, and a blue display effect can be seen visually. Similarly, when ambient light irradiates the red reflective color block 16C, the incident light sequentially enters the third molybdenum oxide block 166 and the metal copper block 167 to form two reflected waves, and the two reflected waves interfere with each other to form a spectrum of a red wave band, so that a red display effect can be seen visually. Note that, the up-down lamination order of the first molybdenum oxide block 161, the silicon nitride block 162, the first metal aluminum block 163, the second molybdenum dioxide block 164, the second metal aluminum block 165, and the third molybdenum oxide block 166 and the metal copper block 167 in the green light-reflecting color block 16A, the blue light-reflecting color block 16B, and the red light-reflecting color block 16C is not exchangeable, otherwise, the display of the corresponding colors cannot be realized.

Specifically, in the reflective array substrate 1 provided in this embodiment, by disposing the reflective color blocking layer 16 on the reflective array substrate 1, the reflective color blocking layer 16 includes a plurality of green reflective color blocking blocks 16A, a plurality of blue reflective color blocking blocks 16B, and a plurality of red reflective color blocking blocks 16C, and the green reflective color blocking blocks 16A, the blue reflective color blocking blocks 16B, and the red reflective color blocking blocks 16C can respectively reflect ambient light to form green light, blue light, and red light, that is, the reflective color blocking layer 16 can directly reflect ambient light to color light, thereby realizing a color display effect, thereby replacing the original color blocking layer and reflective layer, so that the color blocking layer is not required to be disposed on the opposite substrate 2, thereby avoiding blocking of light by the color blocking layer, and further improving the transmittance and the utilization ratio of the ambient light on the basis of realizing color display, so as to improve the display brightness and display effect.

As shown in fig. 2, as an embodiment, the reflective array substrate 1 further includes a first spacer layer 15 (that is, OC buffer) disposed on the first substrate 11, where the first spacer layer 15 and the reflective color resist layer 16 are stacked up and down adjacently, the first spacer layer 15 is located on a side of the reflective color resist layer 16 near the first substrate 11, a surface of the first spacer layer 15 near the side of the reflective color resist layer 16 is in a rugged structure, the reflective color resist layer 16 and the first spacer layer 15 are in a profile configuration, and the reflective color resist layer 16 is also in a rugged structure. That is, the first spacer layer 15 and the reflective color resist layer 16 cooperate together to form a diffuse reflection structure, which can scatter light to achieve a scattering effect, thereby increasing the outgoing angle and viewing angle range of light.

As shown in fig. 2, as an embodiment, the reflective array substrate 1 further includes a plurality of pixel electrodes 13 and a plurality of TFTs 12 (i.e., thin film transistors) arranged in an array, the plurality of pixel electrodes 13 and the plurality of TFTs 12 are respectively disposed in the plurality of sub-pixels, the pixel electrodes 13 and the TFTs 12 are disposed between the first substrate 11 and the reflective color resist layer 16, and the pixel electrodes 13 are electrically connected to the TFTs 12.

Specifically, as shown in fig. 2, in the present embodiment, the reflective array substrate 1 specifically includes:

a first substrate base plate 11;

a first metal layer formed on the first substrate base plate 11, wherein the first metal layer includes a gate electrode 121 and a scan line (not shown), the gate electrode 121 being connected to the scan line;

a gate insulating layer 122 formed on the first substrate base plate 11 and covering the gate electrode 121 and the scan line;

an active layer 123 formed on the gate insulating layer 122;

a second metal layer formed on the gate insulating layer 122, wherein the second metal layer includes a source electrode 124, a drain electrode 125, and a data line (not shown), the source electrode 124 and the drain electrode 125 are respectively connected to the active layer 123, and the source electrode 124 is connected to the data line; wherein the gate electrode 121, the gate insulating layer 122, the active layer 123, the source electrode 124, and the drain electrode 125 together constitute the TFT12;

A first insulating layer 126 formed on the gate insulating layer 122, the first insulating layer 126 covering the source electrode 124, the drain electrode 125, the data line, and the active layer 123;

a pixel electrode 13 formed on the first insulating layer 126, the pixel electrode 13 being connected to the drain electrode 125 through a via hole (not shown) on the first insulating layer 126;

a second insulating layer 14 formed on the first insulating layer 126 and covering the pixel electrode 13;

a first spacer layer 15 formed on the second insulating layer 14;

a reflective color resist layer 16 formed on the first spacer layer 15.

Of course, in other embodiments, the pixel electrode 13 and the TFT12 on the reflective array substrate 1 may have other structures.

As shown in fig. 2, as an embodiment, the green-reflecting color block 16A, the blue-reflecting color block 16B and the red-reflecting color block 16C are all formed by copying the pixel electrodes 13 (i.e., the shapes and the sizes are similar or the same), and the green-reflecting color block 16A, the blue-reflecting color block 16B and the red-reflecting color block 16C are electrically connected to the corresponding pixel electrodes 13, respectively, and the green-reflecting color block 16A, the blue-reflecting color block 16B and the red-reflecting color block 16C are spaced apart from each other (i.e., are insulated from each other and are not electrically connected to each other).

Specifically, in the present embodiment, the pixel electrode 13 has a block structure (i.e., a non-stripe or comb-shaped structure), and the green reflective color block 16A, the blue reflective color block 16B, and the red reflective color block 16C have block structures. Since the pixel electrode 13 is generally made of transparent conductive materials such as Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), the resistivity thereof is relatively large, and the green-reflecting color block 16A, the blue-reflecting color block 16B and the red-reflecting color block 16C are generally made of metal materials, the resistivity of the green-reflecting color block 16A, the blue-reflecting color block 16B and the red-reflecting color block 16C is relatively small; the green reflection color block 16A, the blue reflection color block 16B and the red reflection color block 16C are respectively electrically connected with the corresponding pixel electrodes 13 (i.e., form a parallel structure), so that the conductivity of the pixel electrodes 13 can be improved, the load (Loading) of the pixel electrodes 13 can be reduced, and the charging rate and the response speed of the pixel electrodes 13 can be improved.

In this embodiment, since the second insulating layer 14 and the first spacer layer 15 are disposed between the pixel electrode 13 and the reflective color block layer 16, through holes 141 penetrating up and down (the through holes 141 penetrate up and down the second insulating layer 14 and the first spacer layer 15) are disposed on the second insulating layer 14 and the first spacer layer 15, and the green reflective color block 16A, the blue reflective color block 16B and the red reflective color block 16C are electrically connected to the corresponding pixel electrode 13 through the through holes 141, respectively; and the position of the through hole 141 corresponds to the position of the through hole on the first insulating layer 126, so that each reflective color block 16A/16B/16C and the corresponding pixel electrode 13 form a parallel structure (i.e. the electrical connection position of the reflective color block 16A/16B/16C and the pixel electrode 13 and the electrical connection position of the pixel electrode 13 and the drain electrode 125 correspond).

Specifically, in the present embodiment, the first metal aluminum block 163 in the green reflective color block 16A is electrically connected to the corresponding pixel electrode 13 (of course, the first molybdenum oxide block 161 in the green reflective color block 16A may also be configured to be electrically connected to the pixel electrode 13), the second molybdenum dioxide block 164 and the second metal aluminum block 165 in the blue reflective color block 16B are simultaneously electrically connected to the corresponding pixel electrode 13 (molybdenum oxide can also be electrically conductive and has good conductivity), and the third molybdenum oxide block 166 and the metal copper block 167 in the red reflective color block 16C are simultaneously electrically connected to the corresponding pixel electrode 13.

As shown in fig. 7a to 7o and in combination with fig. 2, the embodiment of the present invention further provides a method for manufacturing the reflective array substrate 1 (it should be noted that, the manufacturing method mainly describes a method for manufacturing the reflective color blocking layer 16 (including the green reflective color blocking block 16A, the blue reflective color blocking block 16B and the red reflective color blocking block 16C), the manufacturing method of the pixel electrode 13 and the TFT12 may refer to the prior art, and not described herein), and the manufacturing method of the reflective array substrate includes:

providing a first substrate 11, wherein the first substrate 11 includes a plurality of first regions, a plurality of second regions, and a plurality of third regions, and the plurality of first regions, the plurality of second regions, and the plurality of third regions are arranged in an array (the first regions, the second regions, and the third regions respectively correspond to the first pixel unit 10A, the second pixel unit 10B, and the third pixel unit 10C described above);

A first metal aluminum block 163, a second metal aluminum block 165, and a metal copper block 167 are formed on the first region, the second region, and the third region of the first substrate 11, respectively. It should be noted that the order of manufacturing the first metal aluminum block 163, the second metal aluminum block 165 and the metal copper block 167 is not limited (of course, it is preferable to manufacture the first metal aluminum block 163 and the second metal aluminum block 165 first, and then manufacture the metal copper block 167, because the etching solution of aluminum will corrode copper and thus affect the metal copper block 167, so that the etching solution of aluminum can be prevented from corroding the copper block when the aluminum block is manufactured first), the first metal aluminum block 163 and the second metal aluminum block 165 can be manufactured at the same time, or can be manufactured separately (preferably, at the same time, thereby saving cost and improving production efficiency);

forming a silicon nitride block 162 on the first metal aluminum block 163, forming a first molybdenum oxide block 161 on the silicon nitride block 162, and sequentially stacking the first molybdenum oxide block 161, the silicon nitride block 162 and the first metal aluminum block 163 up and down to obtain a green reflective color block 16A; forming a second molybdenum dioxide block 164 on the second metal aluminum block 165, wherein the second molybdenum dioxide block 164 and the second metal aluminum block 165 are stacked up and down to obtain a blue reflection color block 16B; forming a third molybdenum oxide block 166 on the metal copper block 167, wherein the third molybdenum oxide block 166 and the metal copper block 167 are stacked up and down to obtain a red reflection color resistance block 16C; wherein the thickness of the first molybdenum oxide block 161 is 50 nm-70 nm, the thickness of the second molybdenum dioxide block 164 is 70 nm-100 nm, and the thickness of the third molybdenum oxide block 166 is 20 nm-30 nm; the green light-reflecting color block 16A, the blue light-reflecting color block 16B, and the red light-reflecting color block 16C together constitute the light-reflecting color block layer 16. Note that the order of manufacturing the first molybdenum oxide block 161, the second molybdenum dioxide block 164, and the third molybdenum oxide block 166 is not limited; the order of manufacturing the silicon nitride block 162, the second molybdenum dioxide block 164 and the third molybdenum oxide block 166 is not limited; meanwhile, since the thickness ranges of the first molybdenum oxide block 161 and the second molybdenum dioxide block 164 are crossed (for example, 70 nm), the first molybdenum oxide block 161 and the second molybdenum dioxide block 164 may be manufactured simultaneously or separately (when the process thicknesses of the first molybdenum oxide block 161 and the second molybdenum dioxide block 164 are different, they are manufactured separately).

As one embodiment, the first metal aluminum block 163, the second metal aluminum block 165, and the metal copper block 167 on the first substrate base 11 are manufactured by a lift-off process.

Specifically, a Lift-Off process (Lift-Off) is to obtain a patterned photoresist structure or a mask of metal or the like on a substrate by a photolithography process, plate a target coating on the mask by a plating process, and then dissolve the photoresist or mechanically remove a metal hard mask by a Lift-Off solution, thereby obtaining a target pattern structure consistent with the pattern, which is called a Lift-Off process. The photoresist can be negative photoresist or positive photoresist according to the design structure type of the product. Compared with other pattern transfer means (such as conventional photoresist coating development exposure and etching processes), the stripping process is simpler and easier to implement. Of course, in other embodiments, the first metallic aluminum block 163, the second metallic aluminum block 165, and the metallic copper block 167 may also be manufactured by conventional etching processes. Specific steps for the preparation of the first metallic aluminum block 163, the second metallic aluminum block 165 and the metallic copper block 167 by the lift-off process are described in detail below.

As one embodiment, the first molybdenum oxide block 161, the second molybdenum dioxide block 164 and the third molybdenum oxide block 166 are manufactured through a plurality of (at least two) etching processes including molybdenum oxide layer coating, photoresist exposure, photoresist development and molybdenum oxide layer dry etching steps (i.e., conventional photoresist coating development exposure, etching processes). During the etching process, the photoresist on the first molybdenum oxide block 161, the second molybdenum dioxide block 164 and the third molybdenum oxide block 166 is not removed; after the etching is completed, the photoresist on the first molybdenum oxide block 161, the second molybdenum dioxide block 164 and the third molybdenum oxide block 166 is removed together. Since the first molybdenum oxide block 161, the second molybdenum oxide block 164 and the third molybdenum oxide block 166 are manufactured by a plurality of etching processes, in order to avoid damage to the molybdenum oxide block formed by the first manufacturing process (the same molybdenum oxide etching solution is generally used by the plurality of etching processes), the photoresist on the molybdenum oxide block is maintained during the etching process, and is removed together. The fabrication process of the first, second and third molybdenum oxide blocks 161, 164 and 166 is described in detail below.

As an embodiment, before the reflective color resist layer 16 is formed on the first substrate 11, the pixel electrode 13 and the TFT12 are further formed on the first substrate 11, and the method for forming the pixel electrode 13 and the TFT12 may refer to the prior art and will not be described herein.

As shown in fig. 7a to 7o, the specific steps of fabricating the reflective color resist layer 16 on the first substrate 11 in this embodiment include:

(1) As shown in fig. 7a, a first substrate 11 is provided, the first substrate 11 including a plurality of first regions, a plurality of second regions, and a plurality of third regions arranged in an array (the first regions, the second regions, and the third regions respectively correspond to the first pixel unit 10A, the second pixel unit 10B, and the third pixel unit 10C described above); the photoresist 4 is coated on the first substrate 11, and the photoresist 4 is exposed and developed, so that the photoresist 4 on the first region and the second region is removed, and the photoresist 4 at other positions remains.

(2) As shown in fig. 7b, an aluminum layer 191 (PVD plating) is plated on the first substrate 11, and the aluminum layer 191 covers the photoresist 4 and the first and second regions of the first substrate 11.

(3) As shown in fig. 7c, the photoresist 4 and the metal aluminum layer 191 on the photoresist 4 are stripped (i.e., a stripping process is used), and the metal aluminum layer 191 in the first region and the second region remain, so as to obtain a first metal aluminum block 163 and a second metal aluminum block 165, respectively.

(4) As shown in fig. 7d, a photoresist 4 is coated on the first substrate 11, and the photoresist 4 covers the first metal aluminum block 163 and the second metal aluminum block 165, and other areas; the photoresist 4 is then exposed and developed to remove the photoresist 4 from the third region and the photoresist 4 remains in other locations.

(5) As shown in fig. 7e, a metal copper layer 192 (PVD plating) is plated on the first substrate 11, and the metal copper layer 192 covers the photoresist 4 and the third region.

(6) As shown in fig. 7f, the photoresist 4 and the metal copper layer 192 on the photoresist 4 are stripped (i.e., a stripping process is used), and the metal copper layer 192 in the third region remains, resulting in a metal copper block 167.

(7) As shown in fig. 7g, a silicon nitride layer 193 (CVD plating film) is plated on the first substrate 11, and the silicon nitride layer 193 covers the first metal aluminum block 163, the second metal aluminum block 165, the metal copper block 167, and other areas.

(8) As shown in fig. 7h, a photoresist (not shown) is coated on the silicon nitride layer 193, and then the photoresist is exposed and developed, so that the photoresist on the first aluminum metal block 163 is remained, and the photoresist at other positions is removed; then, etching (DET) the silicon nitride layer 193 with the remaining photoresist as a mask to leave the silicon nitride layer 193 on the first metal aluminum block 163, and removing the silicon nitride layer 193 at other positions to form the silicon nitride block 162 on the first metal aluminum block 163; the remaining photoresist is then removed.

(9) As shown in fig. 7i, a molybdenum oxide layer 194 (PVD plating film) is plated on the first substrate 11, the molybdenum oxide layer 194 having a thickness of 50nm to 70nm, and the molybdenum oxide layer 194 covering the silicon nitride block 162, the second metal aluminum block 165, the metal copper block 167, and other regions.

(10) As shown in fig. 7j, a photoresist 4 is coated on the molybdenum oxide layer 194, and then the photoresist 4 is exposed and developed, so that the photoresist on the silicon nitride block 162 is remained, and the photoresist at other positions is removed; then, etching (DET) the molybdenum oxide layer 194 with the remaining photoresist as a mask to leave the molybdenum oxide layer 194 on the silicon nitride block 162, and removing the molybdenum oxide layer 194 at other positions to form a first molybdenum oxide block 161 on the silicon nitride block 162; meanwhile, the photoresist 4 on the first molybdenum oxide block 161 is left unremoved.

(11) As shown in fig. 7k, a molybdenum oxide layer 194 (PVD plating film) is again plated on the first substrate 11, the molybdenum oxide layer 194 has a thickness of 70nm to 100nm, and the molybdenum oxide layer 194 covers the photoresist 4, the second metal aluminum block 165, the metal copper block 167 and other areas on the first molybdenum oxide block 161.

(12) As shown in fig. 7l, a photoresist 4 is coated on the molybdenum oxide layer 194, and then the photoresist 4 is exposed and developed, so that the photoresist on the second metal aluminum block 165 is remained, and the photoresist at other positions is removed; then, etching (DET) the molybdenum oxide layer 194 with the remaining photoresist as a mask to leave the molybdenum oxide layer 194 on the second metal aluminum block 165, and removing the molybdenum oxide layer 194 at other positions, thereby forming a second molybdenum dioxide block 164 on the second metal aluminum block 165; at the same time, the photoresist 4 on the second molybdenum dioxide block 164 is left unremoved.

(13) As shown in fig. 7m, a molybdenum oxide layer 194 (PVD coating) is again coated on the first substrate 11, the thickness of the molybdenum oxide layer 194 is 20nm to 30nm, and the molybdenum oxide layer 194 covers the photoresist 4 on the first molybdenum oxide block 161, the photoresist 4 on the second molybdenum dioxide block 164, the metal copper block 167, and other areas.

(14) As shown in fig. 7n, a photoresist 4 is coated on the molybdenum oxide layer 194, and then the photoresist 4 is exposed and developed, so that the photoresist on the metal copper block 167 is remained, and the photoresist at other positions is removed; the molybdenum oxide layer 194 is then etched (DET) using the remaining photoresist as a mask to leave the molybdenum oxide layer 194 on the metal copper block 167, and the molybdenum oxide layer 194 elsewhere is removed, thereby forming a third molybdenum oxide block 166 on the metal copper block 167.

(15) As shown in fig. 7o, the photoresist 4 on the first molybdenum oxide block 161, the second molybdenum dioxide block 164 and the third molybdenum oxide block 166 is removed at the same time, and the reflective color resist layer 16 is formed on the first substrate 11, where the reflective color resist layer 16 includes a green reflective color resist block 16A, a blue reflective color resist block 16B and a red reflective color resist block 16C.

As shown in fig. 2 and 3a, the embodiment of the invention further provides a reflective liquid crystal display panel (particularly a TN-mode reflective liquid crystal display panel) which uses external ambient light as a light source. The reflective liquid crystal display panel includes the reflective array substrate 1, the opposite substrate 2 disposed opposite to the reflective array substrate 1, and the liquid crystal layer 3 disposed between the reflective array substrate 1 and the opposite substrate 2, wherein the opposite substrate 2 is not provided with a color resist layer, and the reflective color resist layer 16 in the reflective array substrate 1 is disposed on one side of the first substrate 11 adjacent to the opposite substrate 2.

As shown in fig. 3a, as an embodiment, the opposite substrate 2 includes a second substrate 21, and a black matrix 25 (i.e., BM) and a common electrode 23 disposed on the second substrate 21, where the black matrix 25 and the common electrode 23 are disposed on a side of the second substrate 21 near the reflective array substrate 1, and the black matrix 25 is located between the second substrate 21 and the common electrode 23. Meanwhile, as shown in fig. 2, since the first spacer layer 15 and the reflective color resist layer 16 in the reflective array substrate 1 have already together formed a diffuse reflection structure, the counter substrate 2 does not need to be formed with a diffuse reflection structure, i.e., the surface of the common electrode 23 is a planar structure.

As shown in fig. 3a, as an embodiment, a spacer PS is further disposed on the second substrate 21 near the reflective array substrate 1, and the spacer PS is disposed corresponding to the black matrix 25, and is located between the opposite substrate 2 and the reflective array substrate 1.

In one embodiment, the gate electrode 121, the source electrode 124, and the drain electrode 125 may be made of a metal or an alloy such as Cr, W, ti, ta, mo, al, cu, or may be a composite film composed of a plurality of metal thin films. The material of the active layer 123 may be amorphous silicon (a-si), polysilicon (p-si), metal oxide semiconductor (IGZO, ITZO), etc. The material of the common electrode 23 and the pixel electrode 13 may be a transparent conductive material such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), aluminum zinc oxide, or the like. The first spacer layer 15 may be made of an organic material like a resin. The material of the gate insulating layer 122 may be silicon nitride, and the material of the first insulating layer 126 and the second insulating layer 14 may be silicon oxynitride, silicon oxide, silicon nitride, or the like.

According to the reflective array substrate 1 provided by the embodiment, the reflective color blocking layer 16 is arranged on the reflective array substrate 1, the reflective color blocking layer 16 comprises the plurality of green reflective color blocking blocks 16A, the plurality of blue reflective color blocking blocks 16B and the plurality of red reflective color blocking blocks 16C, the green reflective color blocking blocks 16A, the blue reflective color blocking blocks 16B and the red reflective color blocking blocks 16C can respectively reflect ambient light to form green light, blue light and red light, namely, the reflective color blocking layer 16 can directly reflect the ambient light into color light, the effect of color display is achieved, the original color blocking layer and the original reflective layer are replaced, so that the color blocking layer is not required to be arranged on the opposite substrate 2, the blocking of the color blocking layer is avoided, the transmittance and the utilization rate of the ambient light are improved on the basis of realizing the color display, and the display brightness and the display effect are improved.

Second embodiment

As shown in fig. 4a and 4b, the reflective liquid crystal display panel according to the second embodiment of the present invention is substantially the same as the first embodiment, except that the diffuse reflection structure is formed at a different position.

Specifically, as shown in fig. 4a, in the present embodiment, a diffuse reflection structure is formed on the counter substrate 2. The opposite substrate 2 comprises a second substrate 21, a second spacer layer 22 and a common electrode 23 are arranged on one side, close to the reflective array substrate 1, of the second substrate 21, the second spacer layer 22 and the common electrode 23 are adjacently stacked up and down, and the second spacer layer 22 is positioned between the common electrode 23 and the second substrate 21; the surface of the second spacer layer 22, which is close to the side of the common electrode 23, is of an uneven structure, the common electrode 23 and the second spacer layer 22 are in profiling arrangement, and the common electrode 23 is also of an uneven structure, namely, the second spacer layer 22 and the common electrode 23 are matched together to form a diffuse reflection structure. As shown in fig. 4b, when the light passes through the second spacer layer 22 and the common electrode 23, the light is scattered, thereby increasing the exit angle and viewing angle range of the light. Meanwhile, a black matrix 25 is further disposed on the second substrate 21, and the black matrix 25 is located between the second substrate 21 and the second spacer layer 22.

Since the diffuse reflection structure is already formed on the opposite substrate 2, the diffuse reflection structure is not required to be further disposed on the reflective array substrate 1, so that the reflective color blocking layer 16 (including the green reflective color blocking piece 16A, the blue reflective color blocking piece 16B and the red reflective color blocking piece 16C) in the reflective array substrate 1 is in a planar structure.

As shown in fig. 4a, as an implementation, in comparison with the first embodiment, the second insulating layer 14 and the first spacer layer 15 are not disposed between the reflective color resist layer 16 and the pixel electrode 13 in this embodiment. In this embodiment, the reflective color block layer 16 and the pixel electrode 13 are stacked up and down adjacently (specifically, the first metal aluminum block 163 in the green reflective color block 16A and the corresponding pixel electrode 13 are stacked up and down adjacently, the second metal aluminum block 165 in the blue reflective color block 16B and the corresponding pixel electrode 13 are stacked up and down adjacently, and the metal copper block 167 in the red reflective color block 16C and the corresponding pixel electrode 13 are stacked up and down adjacently), thereby realizing that the green reflective color block 16A, the blue reflective color block 16B and the red reflective color block 16C are electrically connected with the corresponding pixel electrode 13 respectively, and playing a role of reducing the load (Loading) of the pixel electrode 13.

Other structures of this embodiment are the same as or similar to those of the first embodiment, and are not described here.

Third embodiment

As shown in fig. 5a and 5b, the reflective liquid crystal display panel according to the third embodiment of the present invention is substantially the same as the first embodiment, and is different in light shielding structure.

Specifically, as shown in fig. 5a and 5b, in the present embodiment, the reflective array substrate 1 further includes a first light shielding layer 17 disposed on the first substrate 11, the first light shielding layer 17 is located on a side of the reflective color resist layer 16 away from the first substrate 11, and the first light shielding layer 17 and the reflective color resist layer 16 are disposed at an upper-lower interval. The first light shielding layer 17 includes a plurality of first light shielding blocks 17A arranged in an array, the plurality of first light shielding blocks 17A are respectively disposed corresponding to the plurality of sub-pixels (each first light shielding block 17A is disposed corresponding to the TFT12 in the sub-pixel and the scan line and the data line at the periphery of the sub-pixel, that is, the first light shielding block 17A replaces the original black matrix function), each first light shielding block 17A includes a fourth molybdenum oxide block 171 and a third metal aluminum block 172 which are disposed in a vertically stacked manner, the fourth molybdenum oxide block 171 is located at a side of the third metal aluminum block 172 away from the first substrate 11 (note here that the vertically stacked order of the fourth molybdenum oxide block 171 and the third metal aluminum block 172 may not be reversed), and the thickness of the fourth molybdenum oxide block 171 is 50nm to 70nm.

Specifically, compared with the first embodiment, the first light shielding layer 17 in the present embodiment is used to replace the original black matrix on the opposite substrate 2, that is, the opposite substrate 2 is not provided with the black matrix. According to the embodiment, the film thickness of the molybdenum oxide layer is regulated and controlled, and metal aluminum is matched, so that the metal is blacked, the shading effect of the original black matrix BM is achieved, and the shading of incident light can be reduced. Meanwhile, the first light shielding layer 17 has a certain light reflecting effect besides a light shielding effect; specifically, as shown in fig. 5b, since the third metal aluminum block 172 has a light reflecting function, and the first light shielding layer 17 and the light reflecting color resist layer 16 are disposed at an upper and lower interval, when light is reflected onto the lower surface of the first light shielding layer 17 by the light reflecting color resist layer 16, the light can be reflected onto the light reflecting color resist layer 16 again by the first light shielding layer 17, thereby realizing the reutilization of the light, improving the light utilization ratio, and further improving the display brightness and the display effect.

As shown in fig. 5a, as an embodiment, a third insulating layer 18 is provided between the first light shielding layer 17 and the light-reflecting color resist layer 16, that is, the first light shielding layer 17 and the light-reflecting color resist layer 16 are separated by the third insulating layer 18.

As a preferred embodiment, the thickness of the fourth molybdenum oxide block 171 is 60nm.

As shown in fig. 5a, as an embodiment, the spacer PS on the counter substrate 2 is provided corresponding to the first light shielding block 17A, and the spacer PS stands on the first light shielding block 17A.

In the embodiment, the first shading layer 17 is used for replacing the original black matrix, so that not only can the shading of incident light be reduced, but also the light can be reflected again, the light can be reused, and the light utilization rate is improved; meanwhile, since the first light shielding layer 17 is disposed on the reflective array substrate 1, it is possible to avoid the problem of image quality due to the assembly offset (since the first light shielding layer 17 is disposed on the reflective array substrate 1, the first light shielding blocks 17A in the first light shielding layer 17 can be aligned with the respective sub-pixels, whereas the conventional black matrix is disposed on the opposite substrate 2, there is a possibility that the black matrix is misaligned with the respective sub-pixels due to the offset between the reflective array substrate 1 and the opposite substrate 2 when the reflective array substrate 1 and the opposite substrate 2 are assembled into a box, thereby affecting the image quality).

Other structures of this embodiment are the same as or similar to those of the first embodiment, and are not described here. Meanwhile, this embodiment can be combined with the second embodiment (i.e., the diffuse reflection structure is provided on the counter substrate 2) in addition to the first embodiment (i.e., the diffuse reflection structure is provided on the reflective array substrate 1).

Fourth embodiment

As shown in fig. 6a and 6b, the reflective liquid crystal display panel according to the fourth embodiment of the present invention is substantially the same as the third embodiment, except that the light shielding layer is disposed at a different position.

Specifically, as shown in fig. 6a and 6b, in the present embodiment, the light shielding layer is provided on the counter substrate 2. The opposite substrate 2 comprises a second substrate 21, a second light shielding layer 24 is arranged on one side, close to the reflective array substrate 1, of the second substrate 21, the second light shielding layer 24 comprises a plurality of second light shielding blocks 24A arranged in an array, each second light shielding block 24A comprises a fifth molybdenum oxide block 241 and a fourth metal aluminum block 242 which are stacked up and down, the fifth molybdenum oxide block 241 is positioned on one side, close to the second substrate 21, of the fourth metal aluminum block 242 (note here, the stacking order of the fifth molybdenum oxide block 241 and the fourth metal aluminum block 242 cannot be reversed), and the thickness of the fifth molybdenum oxide block 241 is 50 nm-70 nm; the opposite substrate 2 is not provided with a black matrix. The second light shielding layer 24 is similar to the first light shielding layer 17 in structure and function, and can also perform the functions of shielding light and re-reflecting light, which is not described herein.

As a preferred embodiment, the thickness of the fifth molybdenum oxide block 241 is 60nm.

As shown in fig. 6a, as an embodiment, the second light shielding layer 24 is disposed between the second substrate 21 and the common electrode 23. Of course, in other embodiments, the second light shielding layer 24 may be disposed on a side of the common electrode 23 near the reflective array substrate 1, and the spacer PS on the opposite substrate 2 may stand on the second light shielding block 24A.

Other structures of this embodiment are the same as or similar to those of the third embodiment, and are not described here. Meanwhile, this embodiment can be combined with the second embodiment (i.e., the diffuse reflection structure is provided on the counter substrate 2) in addition to the first embodiment (i.e., the diffuse reflection structure is provided on the reflective array substrate 1).

The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A reflective array substrate provided with a plurality of sub-pixels arranged in an array, wherein the plurality of sub-pixels comprises a plurality of first pixel units (10A), a plurality of second pixel units (10B) and a plurality of third pixel units (10C); the reflective array substrate (1) comprises a first substrate (11) and a reflective color blocking layer (16) arranged on the first substrate (11), wherein the reflective color blocking layer (16) comprises a plurality of green reflective color blocking blocks (16A), a plurality of blue reflective color blocking blocks (16B) and a plurality of red reflective color blocking blocks (16C), and the green reflective color blocking blocks (16A), the blue reflective color blocking blocks (16B) and the red reflective color blocking blocks (16C) are respectively arranged in the first pixel unit (10A), the second pixel unit (10B) and the third pixel unit (10C);

Each green light-reflecting color block (16A) comprises a first molybdenum oxide block (161), a silicon nitride block (162) and a first metal aluminum block (163) which are sequentially stacked up and down, wherein the first molybdenum oxide block (161) is positioned at one side of the silicon nitride block (162) away from the first substrate (11); each blue reflective color block (16B) comprises a second molybdenum dioxide block (164) and a second metal aluminum block (165) which are arranged in a vertically stacked mode, wherein the second molybdenum dioxide block (164) is positioned on one side, far away from the first substrate (11), of the second metal aluminum block (165); each red reflective color block (16C) comprises a third molybdenum oxide block (166) and a metal copper block (167) which are arranged in a stacked manner, wherein the third molybdenum oxide block (166) is positioned on one side of the metal copper block (167) away from the first substrate (11); the thickness of the first molybdenum oxide block (161) is 50-70 nm, the thickness of the second molybdenum dioxide block (164) is 70-100 nm, and the thickness of the third molybdenum oxide block (166) is 20-30 nm; the green light reflecting color block (16A), the blue light reflecting color block (16B) and the red light reflecting color block (16C) are capable of reflecting ambient light to form green light, blue light and red light, respectively.

2. The reflective array substrate according to claim 1, wherein the reflective array substrate (1) further comprises a plurality of pixel electrodes (13) arranged in an array, the plurality of pixel electrodes (13) are respectively disposed in the plurality of sub-pixels, and the pixel electrodes (13) are located between the first substrate (11) and the reflective color resist layer (16); the green light-reflecting color blocking blocks (16A), the blue light-reflecting color blocking blocks (16B) and the red light-reflecting color blocking blocks (16C) are all arranged in a copying mode with the pixel electrodes (13), and the green light-reflecting color blocking blocks (16A), the blue light-reflecting color blocking blocks (16B) and the red light-reflecting color blocking blocks (16C) are respectively electrically connected with the corresponding pixel electrodes (13), and the green light-reflecting color blocking blocks (16A), the blue light-reflecting color blocking blocks (16B) and the red light-reflecting color blocking blocks (16C) are mutually spaced.

3. The reflective array substrate according to claim 1, wherein the reflective array substrate (1) further comprises a first spacer layer (15) disposed on the first substrate (11), the first spacer layer (15) and the reflective color resist layer (16) are stacked up and down adjacently, the first spacer layer (15) is located on a side of the reflective color resist layer (16) close to the first substrate (11), a surface of the first spacer layer (15) close to a side of the reflective color resist layer (16) is in an uneven structure, and the reflective color resist layer (16) is in an uneven structure.

4. The reflective array substrate according to claim 1, wherein the reflective array substrate (1) further comprises a first light shielding layer (17) disposed on the first substrate (11), the first light shielding layer (17) is located at a side of the reflective color blocking layer (16) away from the first substrate (11), and the first light shielding layer (17) and the reflective color blocking layer (16) are disposed at an upper-lower interval; the first shading layers (17) comprise a plurality of first shading blocks (17A) which are arranged in an array, each first shading block (17A) comprises a fourth molybdenum oxide block (171) and a third metal aluminum block (172) which are arranged in an up-down lamination mode, the fourth molybdenum oxide block (171) is located on one side, far away from the first substrate base plate (11), of the third metal aluminum block (172), and the thickness of the fourth molybdenum oxide block (171) is 50-70 nm.

5. A method for manufacturing a reflective array substrate, which is used for manufacturing the reflective array substrate according to any one of claims 1 to 4, the method for manufacturing the reflective array substrate comprising:

providing a first substrate (11), wherein the first substrate (11) comprises a plurality of first areas, a plurality of second areas and a plurality of third areas, and the first areas, the second areas and the third areas are arranged in an array;

forming a first metal aluminum block (163), a second metal aluminum block (165) and a metal copper block (167) on a first region, a second region and a third region of the first substrate (11), respectively;

forming a silicon nitride block (162) on the first metal aluminum block (163), forming a first molybdenum oxide block (161) on the silicon nitride block (162), and sequentially stacking the first molybdenum oxide block (161), the silicon nitride block (162) and the first metal aluminum block (163) up and down to obtain a green reflective color block (16A); forming a second molybdenum dioxide block (164) on the second metal aluminum block (165), wherein the second molybdenum dioxide block (164) and the second metal aluminum block (165) are arranged in a vertically laminated mode, and a blue reflection color block (16B) is obtained; forming a third molybdenum oxide block (166) on the metal copper block (167), wherein the third molybdenum oxide block (166) and the metal copper block (167) are stacked up and down to obtain a red reflection color block (16C); wherein the thickness of the first molybdenum oxide block (161) is 50-70 nm, the thickness of the second molybdenum dioxide block (164) is 70-100 nm, and the thickness of the third molybdenum oxide block (166) is 20-30 nm.

6. The method of manufacturing a reflective array substrate according to claim 5, wherein the first molybdenum oxide block (161), the second molybdenum dioxide block (164) and the third molybdenum oxide block (166) are manufactured by a plurality of etching processes, the etching processes including a molybdenum oxide layer coating, a photoresist exposure, a photoresist development and a molybdenum oxide layer dry etching step; during etching, photoresist on the first molybdenum oxide block (161), the second molybdenum oxide block (164) and the third molybdenum oxide block (166) is not removed; after etching, photoresist on the first molybdenum oxide block (161), the second molybdenum oxide block (164) and the third molybdenum oxide block (166) is removed together.

7. A reflective liquid crystal display panel, comprising a reflective array substrate according to any one of claims 1 to 4, a counter substrate (2) disposed opposite to the reflective array substrate (1), and a liquid crystal layer (3) disposed between the reflective array substrate (1) and the counter substrate (2), wherein no color resist layer is disposed on the counter substrate (2), and the reflective color resist layer (16) in the reflective array substrate (1) is located on a side of the first substrate (11) close to the counter substrate (2).

8. The reflective liquid crystal display panel according to claim 7, wherein the counter substrate (2) comprises a second substrate (21), a second spacer layer (22) and a common electrode (23) are disposed on a side of the second substrate (21) close to the reflective array substrate (1), the second spacer layer (22) and the common electrode (23) are stacked up and down adjacently, and the second spacer layer (22) is located between the common electrode (23) and the second substrate (21); the surface of the second spacer layer (22) close to one side of the common electrode (23) is of an uneven structure, and the common electrode (23) is of an uneven structure.

9. The reflective liquid crystal display panel according to claim 7 or 8, wherein the reflective array substrate (1) further comprises a first light shielding layer (17) disposed on the first substrate (11), the first light shielding layer (17) is located at a side of the reflective color blocking layer (16) away from the first substrate (11), and the first light shielding layer (17) and the reflective color blocking layer (16) are disposed at an upper-lower interval; the first light shielding layer (17) comprises a plurality of first light shielding blocks (17A) which are arranged in an array, each first light shielding block (17A) comprises a fourth molybdenum oxide block (171) and a third metal aluminum block (172) which are arranged in a vertically stacked mode, the fourth molybdenum oxide block (171) is positioned on one side, far away from the first substrate (11), of the third metal aluminum block (172), and the thickness of the fourth molybdenum oxide block (171) is 50-70 nm; a black matrix is not provided on the counter substrate (2).

10. The reflective liquid crystal display panel according to claim 7 or 8, wherein the counter substrate (2) comprises a second substrate (21), a second light shielding layer (24) is arranged on one side, close to the reflective array substrate (1), of the second substrate (21), the second light shielding layer (24) comprises a plurality of second light shielding blocks (24A) arranged in an array, each second light shielding block (24A) comprises a fifth molybdenum oxide block (241) and a fourth metal aluminum block (242) which are arranged in a stacked manner, the fifth molybdenum oxide block (241) is positioned on one side, close to the second substrate (21), of the fourth metal aluminum block (242), and the thickness of the fifth molybdenum oxide block (241) is 50 nm-70 nm; a black matrix is not provided on the counter substrate (2).