CN116774467A - Thin film group structure, photoelectric device and adjusting method of photoelectric device - Google Patents
Thin film group structure, photoelectric device and adjusting method of photoelectric device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims description 117
- 239000010408 film Substances 0.000 claims abstract description 90
- 230000005693 optoelectronics Effects 0.000 claims description 46
- 230000003287 optical effect Effects 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000012788 optical film Substances 0.000 abstract description 14
- 230000001105 regulatory effect Effects 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 description 20
- 239000000243 solution Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Abstract
The embodiment of the application discloses a film group structure, a photoelectric device and a regulating method of the photoelectric device, wherein the film group structure comprises a plurality of film layers and an electrode connected with at least one film layer in the film layers, a bias voltage can be applied to at least one film layer in the film layers through the arrangement of the electrode, and the refractive index of an optical film can be regulated and controlled through regulating the bias voltage applied to a certain film layer. The film group structure is suitable for different use scenes, the film group structure has universality, different requirements can be met through the film structure, the difference between products can be reduced, the production cost of the products can be reduced, and meanwhile, the performance parameters of the photoelectric device assembled with the film group structure can be adjusted, the application range is wider, and the optimal working state can be achieved more easily.
Description
Technical Field
The embodiment of the application relates to the technical field of optical films, in particular to a film group structure, a photoelectric device and an adjusting method of the photoelectric device.
Background
In the field of optical films, optical films have been widely used in the optical and optoelectronic arts for a long time to affect the properties of reflection, transmission, phase, polarization, etc. of light as it propagates at the interface of a medium. For the resonant cavity of the laser, the oscillation feedback of the light wave in the resonant cavity is influenced by the anti-reflection or anti-reflection film structure of the end face. For the antireflection film of the detector, the structure can improve the transmissivity of incident light and improve the photon absorption efficiency of an absorption area. For optical lenses, the optical film can optimize or alter the performance of the lens, imparting various functionalities to the lens. To some extent, optical films also function as physical protection, and have been applied to most optical devices and optical systems by virtue of their lightweight and efficient properties.
With the development of micro-nano photoelectric technology, the requirements on the characteristics of the optical film are more and more, a multi-layer film group, a micro-structure film and the like are gradually developed and applied to various subdivision fields, however, different photoelectric devices often have different requirements on the optical film, so that the optical film needs to be subjected to customized production, the suitability of a production line is poor, the production cost is increased due to the greatly different customized requirements on the optical film, the use condition of the prepared optical film is single, and the performance of the optical device is cured.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art or related art.
To this end, a first aspect of the application provides a film stack structure.
A second aspect of the application provides an optoelectronic device.
A third aspect of the application provides a method of conditioning an optoelectronic device.
In view of this, a first aspect of an embodiment of the present application proposes a film stack structure, including:
a plurality of thin film layers;
and an electrode connected to at least one of the thin film layers, wherein when a bias voltage of the thin film layer connected to the electrode is changed, a refractive index of the thin film layer connected to the electrode is changed.
In one possible embodiment, the material from which the film layer is made comprises: at least one of indium tin oxide, indium zinc oxide, zinc gallium oxide, zinc aluminum oxide, and fluorine doped tin oxide.
In one possible embodiment, the electrode is formed on a plurality of the thin film layers by a photolithography process; or (b)
The electrodes are formed on the film layers through a dispensing and die bonding process; or (b)
The electrodes are formed on a plurality of the film layers through a eutectic crystal fixing process.
According to a second aspect of an embodiment of the present application, there is provided an optoelectronic device, including:
a photovoltaic device body;
the thin film assembly structure as in any above, wherein the thin film assembly is connected to the optoelectronic device body.
In one possible embodiment, the optoelectronic device body comprises:
and the thin film components are arranged on two side end surfaces of the edge-emitting laser chip.
In one possible embodiment, the optoelectronic device body comprises:
the surface-emitting laser chip is provided with a thin film component, and the thin film component is arranged on the emitting end face of the surface-emitting laser chip;
and the partition is arranged between the electrode of the film assembly and the electrode of the surface-emitting laser chip.
In one possible embodiment, the optoelectronic device body comprises:
and the film component is arranged on the photosensitive receiving surface of the detector chip.
In one possible embodiment, the optoelectronic device body comprises:
the thin film layers of the thin film component are arranged on the surface of the external cavity laser; or (b)
And the film component is arranged on the surface of the lens.
According to a third aspect of the embodiments of the present application, a method for adjusting an optoelectronic device is provided, which is applied to the optoelectronic device according to any one of the above technical solutions, and the method includes:
adjusting the refractive index of at least one of the plurality of thin film layers by an electrode;
and adjusting the performance of the photoelectric device based on the adjusted refractive index.
In a possible embodiment, the adjusting the performance of the optoelectronic device based on the adjusted refractive index includes:
in the case that the optoelectronic device body comprises a laser chip, adjusting the optical gain of the laser chip by the adjusted refractive index;
in the case where the optoelectronic device body includes a detector chip, the maximum response wavelength of the detector chip is adjusted by the adjusted refractive index.
Compared with the prior art, the application at least comprises the following beneficial effects:
the thin film group structure provided by the embodiment of the application comprises a plurality of thin film layers and the electrode connected with at least one thin film layer in the plurality of thin film layers, wherein the thickness of the thin film group structure is convenient to condition through the arrangement of the plurality of thin film layers, the bias voltage can be applied to at least one thin film layer in the plurality of thin film layers through the arrangement of the electrode, and the refractive index of the optical thin film can be regulated and controlled through adjusting the bias voltage applied to a certain thin film layer. Further, according to an equivalent medium theory and a Fresnel formula, the change of the refractive index of the layer can change the equivalent refractive index of the whole film group structure, so that the reflectivity, the transmissivity and other characteristics of the film group are affected. The electric control optical thin film group structure is applied to lasers, detectors and other photoelectric devices, the performance of the electric control optical thin film group structure can be adjusted and optimized by adjusting the voltage applied to the thin film group, meanwhile, the reflectivity and the transmissivity of the thin film group structure are adjustable, one thin film group structure can be applicable to different use scenes, the thin film group structure has universality, different requirements can be met through one thin film structure, the difference between products can be reduced, the production cost of the products is reduced, and meanwhile, the performance parameters of the photoelectric device assembled with the thin film group structure are adjustable, the application range is wider, and the optimal working state is easier to achieve.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic block diagram of a thin film stack structure in accordance with one embodiment of the present application;
FIG. 2 is a schematic block diagram of a film stack structure according to another embodiment of the present application;
FIG. 3 is a schematic block diagram of a plurality of film layers of a film stack structure according to another embodiment of the present application;
FIG. 4 is a schematic block diagram of an optical device according to a first embodiment of the present application;
FIG. 5 is a schematic block diagram of an optical device according to a second embodiment of the present application;
FIG. 6 is a schematic block diagram of an optical device according to a third embodiment of the present application;
FIG. 7 is a schematic block diagram of an optical device according to a fourth embodiment of the present application;
FIG. 8 is a schematic block diagram of an optical device according to a fifth embodiment of the present application;
fig. 9 is a schematic step flow diagram of an optical device adjustment method according to an embodiment of the present application.
The correspondence between the reference numerals and the component names in fig. 1 to 8 is:
100 film group structure;
110 thin film layer, 120 electrode;
131 side-emitting laser chips, 132 surface-emitting laser chips, 133 detector chips, 134 lenses, 135 substrates.
Detailed Description
In order to better understand the above technical solutions, the following detailed description of the technical solutions of the embodiments of the present application is made by using the accompanying drawings and the specific embodiments, and it should be understood that the specific features of the embodiments of the present application are detailed descriptions of the technical solutions of the embodiments of the present application, and not limit the technical solutions of the present application, and the technical features of the embodiments of the present application may be combined with each other without conflict.
As shown in fig. 1 to 3, a first aspect of an embodiment of the present application proposes a film stack structure 100, including: a plurality of thin film layers 110; and an electrode 120, the electrode 120 being connected to at least one thin film layer 110 among the plurality of thin film layers 110, wherein when the bias voltage of the thin film layer 110 connected to the electrode 120 is changed, the refractive index of the thin film layer 110 connected to the electrode 120 is changed.
The thin film group structure 100 provided in the embodiment of the application includes a plurality of thin film layers 110 and an electrode 120 connected to at least one thin film layer 110 of the plurality of thin film layers 110, the thickness of the thin film group structure 100 is convenient to be conditioned by the arrangement of the plurality of thin film layers 110, a bias voltage can be applied to at least one thin film layer 110 of the plurality of thin film layers 110 by the arrangement of the electrode 120, and the refractive index of the optical thin film can be controlled by adjusting the bias voltage applied to a certain thin film layer. Further, according to the equivalent medium theory and fresnel formula, the change of the refractive index of the layer changes the overall equivalent refractive index of the film stack structure 100, so as to affect the reflectivity, transmissivity, and other characteristics of the film stack. The electric control optical thin film group structure 100 is applied to lasers, detectors and other photoelectric devices, the performance of the electric control optical thin film group structure 100 can be adjusted and optimized by adjusting the voltage applied to the thin film group, meanwhile, the reflectivity and the transmissivity of the thin film group structure 100 are adjustable, one thin film group structure 100 can be applicable to different use scenes, the thin film group structure 100 has universality, different requirements can be met through one thin film structure, the difference between products can be reduced, the production cost of the products can be reduced, and meanwhile, the performance parameters of the photoelectric devices assembled with the thin film group structure 100 can be adjusted, the application range is wider, and the optimal working state can be achieved more easily.
As shown in fig. 1 and 2, a plurality of thin film layers 110 may be stacked, and the widths of the plurality of thin film layers 110 may be the same or different.
Taking the application of the product to a laser as an example, a resonant cavity is one of important components of the laser, and lasing can only occur when the gain of light oscillating in the resonant cavity is greater than the loss. The loss is photon absorption of the transmission medium on the one hand and end face loss on the other hand. At the lasing threshold, there is a back and forth optical gain in the cavity that exactly counteracts the optical loss in the process. The optical gain at this time can be found in formula (1):
g: an optical gain; alpha: an absorption coefficient; l: the cavity length of the resonant cavity; r1 and R2 are the reflectivities of the two end faces respectively.
As can be seen from equation (1), the reflectivity of the end surface affects the optical gain of the resonator, i.e., affects the main performance parameters such as the threshold current, the output power, and the skew efficiency of the laser. The refractive index and further the reflectivity can be adjusted by arranging the thin film group structure 100 provided by the embodiment of the application on the laser, so that the optical gain of the laser can be adjusted when the thin film group structure 100 provided by the embodiment of the application is arranged, and the laser can stably and accurately manufacture the antireflection or reflection-increasing film of the end face.
Taking the film group structure 100 as an example applied to a detector structure, the anti-reflection film in the detector structure can effectively improve the intensity of incident light entering the absorption region and improve the detection efficiency. For light of different wavelengths, an extremum occurs at this wavelength position when the effective optical thickness of the film is an odd multiple of 1/4 wavelength. When the refractive index is greater than that of the substrate, the reflection is enhanced as a maximum value of the reflectivity; when the refractive index is smaller than that of the substrate, it shows a minimum value of reflectivity, i.e., antireflective. Since the refractive index of a common semiconductor material is larger than that of an antireflection film, for the wavelength of the maximum transmittance position, the formula (2) can be approximated:
λ＝4dn eff (2)
lambda: a wavelength; d: the thickness of the antireflection film; n is n eff : the equivalent refractive index of the antireflection film.
Wherein n is eff With respect to the thickness and refractive index of each of the thin film layers 110 of the thin film stack structure 100, the overall equivalent refractive index can be theoretically calculated when the materials, thicknesses, and fabrication methods of each of the layers of the thin film stack structure 100 are certain. However, in the actual manufacturing process, the characteristics of the manufactured thin film may float up and down due to the fluctuation of the process conditions, which may deviate the maximum transmission wavelength of the product from the design target. Meanwhile, parameters of the manufactured film are determined, and the film cannot be completely removed under the condition of not damaging other components. Thus, anomalies caused by process fluctuations are likely to be scrapped, which severely affects yield costs and production development cycles. When the thin film group structure 100 provided by the embodiment of the application is used as the antireflection film of the detector, the refractive index and the reflectivity of the antireflection film can be adjusted, so that the detector can be in an optimal working state.
In one possible embodiment, the material from which the thin film layer 110 is made comprises: at least one of indium tin oxide, indium zinc oxide, zinc gallium oxide, zinc aluminum oxide, and fluorine doped tin oxide.
In this technical solution, there is further provided a material for preparing the thin film layer 110, where the material for preparing the thin film layer 110 may include one or more of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc gallium oxide (GZO), zinc aluminum oxide (AZO) and fluorine doped tin oxide (FTO), and the applicable wavelength ranges of these materials may also be changed according to the doping ratio. As the bias voltage applied to the ITO film increases, the refractive index n thereof significantly decreases, the variation is maximally reduced from 1.9 to 0.5, and the extinction coefficient κ also significantly decreases. Based on the change property, the phenomenon that the real part of the dielectric constant changes from positive to negative in the visible light and infrared wave bands occurs, and based on the phenomenon, the thin film layer 110 is prepared from the material, and when the bias voltage is applied through the electrode 120 to change, the refractive index of the thin film layer 110 can change accordingly.
In one possible embodiment, the electrode 120 is formed on the plurality of thin film layers 110 through a photolithography process; or the electrode 120 is formed on the plurality of thin film layers 110 through a dispensing die bonding process; or the electrode 120 is formed on the plurality of thin film layers 110 through a eutectic bonding process.
In this technical solution, a preparation method of the electrode 120 is further provided, and the electrode 120 may be formed on the thin film layer 110 through a photolithography process, so as to improve stability of the electrode 120.
In this technical scheme, the electrode 120 may also be prepared by a dispensing die bonding process and a eutectic die bonding process, so that the electrode 120 is conveniently prepared.
As shown in fig. 4 to 8, a second aspect of an embodiment of the present application proposes an optoelectronic device including: a photovoltaic device body; the thin film stack structure 100 as in any preceding claim, wherein the thin film stack is coupled to the photovoltaic device body.
The photovoltaic device provided by the embodiment of the application comprises the thin film group structure 100 in any one of the above technical schemes, so that the photovoltaic device has all the beneficial effects of the thin film group structure 100 in the above technical scheme.
The photovoltaic device provided by the embodiment of the application comprises a photovoltaic device body and a film group structure 100, wherein the film group structure 100 comprises a plurality of film layers 110 and an electrode 120 connected with at least one film layer 110 in the plurality of film layers 110, the thickness of the film group structure 100 is convenient to condition through the arrangement of the plurality of film layers 110, a bias voltage can be applied to at least one film layer 110 in the plurality of film layers 110 through the arrangement of the electrode 120, and the refractive index of an optical film of the layer can be regulated and controlled through adjusting the bias voltage applied to a certain film. Further, according to the equivalent medium theory and fresnel formula, the change of the refractive index of the layer changes the overall equivalent refractive index of the film stack structure 100, so as to affect the reflectivity, transmissivity, and other characteristics of the film stack. The change of reflectivity and transmissivity acts on the photoelectric device body, can adjust performance and parameter of photoelectric device body, can adjust its performance through adjusting the voltage that adds at the film group, reflectivity and transmissivity through film group structure 100 are adjustable simultaneously, can make a film group structure 100 be applicable to different service scenarios, make film group structure 100 possess the commonality, can satisfy different demands through a film structure, can reduce the difference between the product, do benefit to the manufacturing cost of reduction product, simultaneously to the photoelectric device that is equipped with this film group structure 100, the performance parameter of photoelectric device is adjustable, application scope is wider, reach optimal operating condition more easily.
As shown in fig. 4, in one possible embodiment, the optoelectronic device body comprises: the edge-emitting laser chip 131, and the thin film components are disposed on both side end surfaces of the edge-emitting laser chip 131.
In this embodiment, the optoelectronic device body may include an edge-emitting laser chip 131, and the resonant cavity is one of important components of the edge-emitting laser chip 131, where the lasing can only occur when the gain of the light oscillating in the resonant cavity is greater than the loss. The loss is photon absorption of the transmission medium on the one hand and end face loss on the other hand. At the lasing threshold, there is a back and forth optical gain in the cavity that exactly counteracts the optical loss in the process. The optical gain at this time can be found in formula (1):
g: an optical gain; alpha: an absorption coefficient; l: the cavity length of the resonant cavity; r1 and R2 are the reflectivities of the two end faces respectively.
As can be seen from equation (1), the reflectivity of the end surface affects the optical gain of the resonator, i.e., affects the main performance parameters such as the threshold current, the output power, and the skew efficiency of the laser. The refractive index and thus the reflectivity can be adjusted by arranging the thin film group structure 100 provided by the embodiment of the application on the laser, so that the optical gain can be adjusted when the edge-emitting laser chip 131 passes through the thin film group structure 100, and the edge-emitting laser chip 131 can stably and accurately manufacture the anti-reflection or anti-reflection film of the end face.
As shown in fig. 5, in one possible embodiment, the optoelectronic device body comprises: a surface-emitting laser chip 132, the thin film component being disposed on an emission end face of the surface-emitting laser chip 132; a partition provided between the electrode 120 of the thin film assembly and the electrode 120 of the surface emitting laser chip 132.
In this technical solution, the optoelectronic device body may further include a surface-emitting laser chip 132, and by setting a thin film component on the emitting end face of the surface-emitting laser chip 132, the optical gain of the surface-emitting laser chip 132 may be adjusted, so that the surface-emitting laser chip 132 may stably and accurately manufacture an anti-reflection or anti-reflection film of the end face.
In this technical solution, a partition may be further disposed between the electrode 120 of the thin film component and the electrode 120 of the surface emitting laser chip 132, and by setting the partition, the bias voltage applied to the thin film layer 110 may be prevented from affecting the current injection for driving the chip to operate.
As shown in fig. 6, in one possible embodiment, the optoelectronic device body comprises: the detector chip 133, the thin film component is disposed on the receiving photosensitive surface of the detector chip 133.
In this technical scheme, the photoelectric device body can include detector chip 133, and thin film component sets up the antireflection coating that is the detector on the photosensitive surface of receiving of detector chip 133, and the antireflection coating can improve the intensity that incident light got into the absorption zone effectively, improves detection efficiency. For light of different wavelengths, an extremum occurs at this wavelength position when the effective optical thickness of the film is an odd multiple of 1/4 wavelength. When the refractive index is greater than that of the substrate, the reflection is enhanced as a maximum value of the reflectivity; when the refractive index is smaller than that of the substrate, it shows a minimum value of reflectivity, i.e., antireflective. Since the refractive index of a common semiconductor material is larger than that of an antireflection film, for the wavelength of the maximum transmittance position, the formula (2) can be approximated:
λ＝4dn eff (2)
lambda: a wavelength; d: the thickness of the antireflection film; n is n eff : the equivalent refractive index of the antireflection film.
Wherein n is eff In relation to the thickness and refractive index of each of the film layers 110 of the film stack 100, when the material, thickness, and fabrication of each of the film stack 100 layersThe method can theoretically calculate the whole equivalent refractive index at a certain time. However, in the actual manufacturing process, the characteristics of the manufactured thin film may float up and down due to the fluctuation of the process conditions, which may deviate the maximum transmission wavelength of the product from the design target. Meanwhile, parameters of the manufactured film are determined, and the film cannot be completely removed under the condition of not damaging other components. Thus, anomalies caused by process fluctuations are likely to be scrapped, which severely affects yield costs and production development cycles. When the thin film group structure 100 provided by the embodiment of the application is used as the antireflection film of the detector, the refractive index and the reflectivity of the antireflection film can be adjusted, so that the detector chip 133 can be in an optimal working state.
As shown in fig. 7, in one possible embodiment, the optoelectronic device body includes: an external cavity laser, and a plurality of thin film layers 110 of the thin film assembly are disposed on the surface of the external cavity laser.
In the technical scheme, the photoelectric device body can further comprise an external cavity laser, and the performance of the device and the system can be adjusted and optimized by arranging the thin film component on the surface of the external cavity laser.
In some examples, the optoelectronic device body may further include a mirror, a phase plate, and a grating.
In some examples, the thin film assembly may also be disposed on the substrate 135 of the optoelectronic device, facilitating the placement of the electrode 120 by disposing the electrode 120 on the substrate 135, on the one hand; on the other hand, it is convenient to apply a bias voltage to the thin film layer 110 through the electrode 120.
As shown in fig. 8, in one possible embodiment, the optoelectronic device body includes: and a lens 134, wherein the film assembly is disposed on the surface of the lens 134.
In this technical scheme, the optoelectronic device body may further include a lens 134, and by setting a thin film component on the lens 134, the refractive index of the lens 134 may be adjusted by the change of the refractive index of the thin film component, so that the application range of the lens 134 may be improved.
As shown in fig. 9, a third aspect of the embodiment of the present application provides a method for adjusting an optoelectronic device, which is applied to an optoelectronic device according to any one of the above-mentioned technical solutions, where the adjusting method includes:
step 101: adjusting the refractive index of at least one of the plurality of thin film layers by the electrode;
step 102: and adjusting the performance of the photoelectric device based on the adjusted refractive index.
The adjusting method of the photoelectric device provided by the embodiment of the application is applied to the photoelectric device of any technical scheme, so that the adjusting method has all the beneficial effects of the photoelectric device of the technical scheme.
According to the adjusting method of the photoelectric device, the bias voltage is applied to at least one thin film layer in the plurality of thin film layers through the electrode, so that the bias voltage is changed, the refractive index of the thin film layers is changed, the effective refractive index of the whole thin film group structure is changed, the performance of the photoelectric device assembled with the thin film group structure is adjusted, and the photoelectric device can be in an optimal operation state and the operation mode of the thin film group structure can be adjusted.
In one possible embodiment, the tuning package adjusts the performance of the optoelectronic device based on the tuned refractive index:
in the case that the optoelectronic device body comprises a laser chip, adjusting the optical gain of the laser chip by the adjusted refractive index;
in the case where the optoelectronic device body includes a detector chip, the maximum response wavelength of the detector chip is adjusted by the adjusted refractive index.
The adjusting method of the photoelectric device provided by the embodiment of the application can conveniently adjust and optimize the performance of the photoelectric device. For the laser, the method can adjust the feedback of the resonant cavity at any time, and accordingly adjust the characteristics of the laser such as threshold, power, center wavelength and the like. For the detector, the method can adjust the transmittance of the antireflection film to different wavelengths at any time, adjust the transmittance of the incident wavelength position to the maximum, and pertinently improve the detection effect of the detector to the wavelength. For other optical devices and optical systems, the method can also conveniently adjust and optimize the performance of the devices and the systems by adjusting the reflectivity, the transmissivity and other characteristics of the film group, and develop special effects. In addition, the method can solve the problem of abnormal optical film manufacturing caused by process fluctuation, improve the fault tolerance of the process manufacturing, ensure the yield of the optical film link, reduce the scrapping cost and shorten the research and development period.
In the present application, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more, unless expressly defined otherwise. The terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; "coupled" may be directly coupled or indirectly coupled through intermediaries. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present application, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "front", "rear", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or units referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present application.
In the description of the present specification, the terms "one embodiment," "some embodiments," "particular embodiments," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A film stack structure, comprising:
a plurality of thin film layers;
and an electrode connected to at least one of the thin film layers, wherein when a bias voltage of the thin film layer connected to the electrode is changed, a refractive index of the thin film layer connected to the electrode is changed.
2. The film stack structure of claim 1, wherein the material from which the film layers are made comprises: at least one of indium tin oxide, indium zinc oxide, zinc gallium oxide, zinc aluminum oxide, and fluorine doped tin oxide.
3. The membrane stack structure of claim 1, wherein,
the electrodes are formed on a plurality of the thin film layers through a photoetching process; or (b)
The electrodes are formed on the film layers through a dispensing and die bonding process; or (b)
The electrodes are formed on a plurality of the film layers through a eutectic crystal fixing process.
4. An optoelectronic device, comprising:
a photovoltaic device body;
a film stack structure as in any one of claims 1-3, said film stack being attached to said optoelectronic device body.
5. The optoelectronic device of claim 4, wherein the optoelectronic device body comprises:
and the thin film components are arranged on two side end surfaces of the edge-emitting laser chip.
6. The optoelectronic device of claim 4, wherein the optoelectronic device body comprises:
the surface-emitting laser chip is provided with a thin film component, and the thin film component is arranged on the emitting end face of the surface-emitting laser chip;
and the partition is arranged between the electrode of the film assembly and the electrode of the surface-emitting laser chip.
7. The optoelectronic device of claim 4, wherein the optoelectronic device body comprises:
and the film component is arranged on the photosensitive receiving surface of the detector chip.
8. The optoelectronic device of claim 4, wherein the optoelectronic device body comprises:
the thin film layers of the thin film component are arranged on the surface of the external cavity laser; or (b)
And the film component is arranged on the surface of the lens.
9. A method of conditioning an optoelectronic device, applied to an optoelectronic device according to any one of claims 4 to 8, the conditioning method comprising:
adjusting the refractive index of at least one of the plurality of thin film layers by an electrode;
and adjusting the performance of the photoelectric device based on the adjusted refractive index.
10. The optoelectronic device of claim 9, wherein the adjusting the performance of the optoelectronic device based on the adjusted refractive index comprises: :
in the case that the optoelectronic device body comprises a laser chip, adjusting the optical gain of the laser chip by the adjusted refractive index;
in the case where the optoelectronic device body includes a detector chip, the maximum response wavelength of the detector chip is adjusted by the adjusted refractive index.
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| CN202310572056.3A CN116774467B (en) | 2023-05-19 | Thin film group structure, photoelectric device and adjusting method of photoelectric device |
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| CN202310572056.3A CN116774467B (en) | 2023-05-19 | Thin film group structure, photoelectric device and adjusting method of photoelectric device |
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