CN116770251A - Semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production - Google Patents

Abstract

The application relates to a semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production, and belongs to the technical field of semiconductor manufacturing. Comprising the following steps: the side surface shell of the vacuum cavity is provided with three monitoring holes and an evaporation source; the sample table is arranged in the vacuum cavity, a growth substrate is placed on the side surface of the sample table through a buckle, and a rotating shaft is arranged on a central shaft perpendicular to the upper bottom surface and the lower bottom surface of the sample table; the electric motor is arranged outside the vacuum cavity, is connected with one end of the rotating shaft and is used for controlling the rotating speed of the sample table; the in-situ high-resolution morphology monitoring module, the Raman monitoring module and the X-ray monitoring module are respectively opposite to the three monitoring holes of the side surface shell of the vacuum cavity and used for monitoring the surface morphology and structure, the crystal state and the crystal structure of the film, wherein the nozzle of the evaporation source is opposite to the growth substrate. The system provided by the application can accommodate a plurality of groups of growth substrates, and the nozzle of the evaporation source can be opposite to each growth substrate through the rotation of the sample table, so that the uniformity of the film is ensured.

Description

Semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production

Technical Field

The application relates to the technical field of semiconductor manufacturing, in particular to a semiconductor film deposition in-situ real-time monitoring system and method applied to industrial mass production.

Background

Film deposition is one of three core steps of semiconductor wafer manufacturing, the number of film deposition equipment on an industrial production line is few, more than ten, but the film deposition equipment has the film deposition function and does not have the function of in-situ real-time on-line monitoring, once the quality of a product produced by the traditional process flow is problematic, a great deal of time cost and labor cost are required to be consumed to find reasons, and the yield of the product cannot be ensured. In addition, uniformity of thin films is very important for semiconductor devices because uniformity of thin films tends to directly affect device performance, and thus, how to improve uniformity of thin films during deposition is also a critical issue.

At present, thin film deposition equipment can realize real-time monitoring of thin film quality in a thin film deposition process, but the sample platforms are all plane sample platforms, are single in number, can only accommodate a group of silicon wafers, have small areas, cannot realize industrialized mass production, and are only suitable for research and development of enterprises or universities. In addition, since the sample stage in the thin film growth device is a planar sample stage, when the number of evaporation sources is greater than or equal to two, the nozzle of each group of evaporation sources cannot be opposite to the central position of the growth substrate on the sample stage, so that the uniformity of the thin film deposited on the growth substrate is greatly reduced, and the performance of the semiconductor device is affected.

In summary, the existing in-situ monitoring thin film deposition equipment has limited number of silicon wafers, cannot realize industrialized mass production, and cannot realize that each group of evaporation sources are opposite to the central position of the growing substrate on the sample table when the number of the evaporation sources is more than or equal to two, so that the uniformity of the thin film on the growing substrate is affected.

Disclosure of Invention

Therefore, the application aims to solve the technical problems that the film deposition equipment in the prior art can contain limited silicon wafers, cannot realize industrialized mass production, and cannot realize that each group of evaporation sources are opposite to the central position of a growth substrate on a sample table when the number of the evaporation sources is more than or equal to two, thereby influencing the uniformity of the film on the growth substrate

In order to solve the technical problems, the application provides a semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production, which comprises:

the vacuum cavity is of a cylinder structure, three monitoring holes and an evaporation source are formed in a side surface shell of the vacuum cavity, and the evaporation source penetrates through the side surface shell of the vacuum cavity;

the sample table is arranged in the vacuum cavity, is of a regular prism structure, is provided with buckles on the side surfaces, is used for placing a growth substrate, and is provided with a rotating shaft perpendicular to the central shaft of the upper bottom surface and the lower bottom surface of the sample table;

the electric motor is arranged outside the vacuum cavity, connected with one end of the rotating shaft and used for controlling the rotating speed of the sample table;

the in-situ high-resolution morphology monitoring module is arranged outside the vacuum cavity and is opposite to the first monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the surface morphology of the film;

the Raman monitoring module is arranged outside the vacuum cavity and is opposite to the second monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the structure of the film;

the X-ray monitoring module is arranged outside the vacuum cavity and is opposite to the third monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the crystal state and the crystal structure of the film;

the number of the evaporation sources is smaller than or equal to that of the growth substrates, and the nozzle of each evaporation source is opposite to the growth substrates on the surfaces of different sides of the sample table respectively.

In one embodiment of the application, the first monitoring aperture, the second monitoring aperture, and the third monitoring aperture are each directly opposite to a growth substrate on different side surfaces of the sample stage.

In one embodiment of the present application, the evaporation source is the same as the number of thin film layers deposited in advance.

In one embodiment of the application, the nozzles of the evaporation sources are provided with baffles, and when one evaporation source works, the baffles at the nozzles of the other evaporation sources are closed.

In one embodiment of the application, the evaporation sources are all connected with a controller for controlling the evaporation rate of the evaporation sources.

In one embodiment of the application, the in situ high resolution topography monitoring module comprises:

the spectrometer submodule is used for projecting a laser light source to the surface of the growth base, and the laser light source acts on the surface of the growth substrate and emits a light signal after being absorbed;

the optical detector sub-module is used for detecting the return light signal;

the high-resolution image acquisition sub-module is used for acquiring image information of the surface of the growth substrate;

and the monitoring module is used for connecting the optical detector sub-module and the high-resolution image acquisition sub-module and determining the spectrum data and the morphology data of the film according to the return light signal and the image information.

In one embodiment of the application, the raman monitoring module is a raman spectrometer.

In one embodiment of the application, the X-ray monitoring module is an X-ray diffractometer.

In one embodiment of the present application, the system further comprises a display device, wherein the display device is connected with the in-situ high-resolution morphology monitoring module, the raman monitoring module and the X-ray monitoring module, and is used for displaying morphology data, structure data, crystal state data and crystal structure data of the thin film on line.

The application also provides a semiconductor film deposition in-situ real-time monitoring method applied to industrial mass production, which is applied to the semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production, and comprises the following steps:

placing a growth substrate on a side surface of a sample stage inside a vacuum chamber;

when the number of layers of the film deposited in advance is 1, opening a baffle at a nozzle of an evaporation source, setting the rotating speed of an electric motor and the evaporation rate of the evaporation source according to the preset thickness of the film, and driving the sample table to rotate through the electric motor until the film with the preset thickness is deposited on the surface of a growth substrate on each side surface of the sample table;

when the number of the preset deposited thin film layers is N, N is more than or equal to 2, opening a baffle plate at a first evaporation source nozzle, closing baffle plates at other evaporation source nozzles, and setting the rotating speed of the electric motor and the evaporation rate of the first evaporation source according to a first preset thickness corresponding to the first thin film layer;

driving the sample stage to rotate through the electric motor until a first layer of film with a first preset thickness is deposited on the surface of the growth substrate on each side surface of the sample stage;

opening a baffle at the nozzle of an nth evaporation source, closing baffles at the nozzles of other evaporation sources, and setting the rotating speed of the electric motor and the evaporation rate of the nth evaporation source according to the nth preset thickness corresponding to the nth film;

and driving the sample stage to rotate through the electric motor until the surface of the growth substrate on each side surface of the sample stage is deposited with an N layer film with an N preset thickness.

The in-situ real-time monitoring system for the deposition of the semiconductor film applied to industrial mass production comprises a vacuum cavity, wherein three monitoring holes and an evaporation source are formed in a side surface shell of the vacuum cavity; the sample table is arranged in the vacuum cavity and is of a regular prism structure, and growth substrates can be placed on each side surface of the sample table through buckles, so that multiple groups of growth substrates can grow simultaneously, a rotating shaft is arranged at a central shaft vertical to the upper bottom surface and the lower bottom surface of the sample table, and one end of the rotating shaft penetrates through the bottom surface of the vacuum cavity and is connected with an electric motor so as to control the rotating speed of the sample table; the in-situ high-resolution morphology monitoring module is opposite to the first monitoring hole on the side surface shell of the vacuum cavity and is used for monitoring the surface morphology of the film growth; the Raman monitoring module is opposite to the second monitoring hole on the side surface shell of the vacuum cavity and is used for monitoring the structure of film growth; the X-ray monitoring module is opposite to a third monitoring hole on the side surface shell of the vacuum cavity and used for monitoring the crystal state and the crystal structure of the film, the number of the growth substrates is greater than or equal to that of the evaporation sources, and the nozzle of each evaporation source is opposite to the growth substrates on the surfaces of different sides of the sample table, so that the gas sprayed by the evaporation source can vertically reach the surfaces of each growth substrate through the rotation of the sample table, and the uniformity of the film is improved.

The semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production provided by the application can simultaneously grow a plurality of groups of substrates by changing the structure of the sample table so as to realize the maximum evaporation effective area in a limited cavity space; moreover, when the number of the evaporation sources is increased, the nozzle of each evaporation source can be ensured to be opposite to the growth substrate, so that the uniformity of the film is greatly improved; the rotating speed of the sample table is adjusted through the electric motor, so that the residence time of each growth substrate at the evaporation source nozzle can be controlled, and the thickness of the film can be controlled; in addition, the application can monitor the shape, structure, crystal state and crystal structure of the film in real time so as to ensure the quality of film growth.

Drawings

In order that the application may be more readily understood, a more particular description of the application will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings, in which

FIG. 1 is a schematic diagram of a semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production;

FIG. 2 is a schematic cross-sectional view of a vacuum chamber of the in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production provided by the application;

FIG. 3 is a schematic view of a latch structure on a substrate on a side surface of a sample stage according to the present application;

FIG. 4 is a schematic diagram of a connection relationship between a sample stage and a rotating shaft and an electric motor provided by the present application;

FIG. 5 is a schematic flow chart of a method for in-situ real-time monitoring of semiconductor film deposition for industrial mass production;

description of the drawings: 1. a vacuum chamber; 2. a sample stage; 21. a sample stage side surface substrate; 3. an evaporation source; 31. a first evaporation source; 32. a second evaporation source; 33. a third evaporation source; 4. a rotation shaft; 5. an electric motor; 6. an in-situ high-resolution morphology monitoring module; 7. a raman monitoring module; 8. an X-ray monitoring module; 9. a buckle; 10. the vacuum cavity can be opened; 11. a handle; 12. and a baffle.

Detailed Description

The present application will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the application and practice it.

The sample stage of the existing thin film deposition equipment is a planar sample stage, the quantity of the growth substrates which can be placed is limited, only one group of silicon wafers can be contained, the area is small, the industrialized mass production cannot be realized, and the thin film deposition equipment is only suitable for research and development of enterprises or universities. In addition, because of the planar structure of the sample stage, when the number of evaporation sources is increased, the nozzle of each evaporation source cannot be opposite to the growth substrate, so that the deposited film on the surface of the substrate is uneven. When the number of layers of the deposited film is large, a plurality of evaporation sources with different evaporation materials are often needed, and in this case, the nozzle of each evaporation source is obliquely opposite to the growth substrate, so that the uniformity of the film is greatly affected. In addition, in the thin film deposition process, the morphology, structure and crystal state of the thin film are also key factors for determining the quality of the thin film, so how to simultaneously consider the efficiency and quality of thin film deposition and improve the uniformity of the thin film is a problem to be solved in the thin film deposition process.

Example 1

Based on this, the present application provides a semiconductor thin film deposition in-situ real-time monitoring system applied to industrial mass production, as shown in fig. 1, which is a schematic structural diagram of a semiconductor thin film deposition in-situ real-time monitoring system applied to industrial mass production according to an embodiment of the present application, and includes:

the vacuum cavity is of a cylinder structure, three monitoring holes and an evaporation source are arranged on the side face of the vacuum cavity, and the evaporation source penetrates through a side face shell of the vacuum cavity.

The evaporation sources are used for heating evaporation materials to deposit films on the surface of a growth substrate, the number of the evaporation sources can be set according to the needs, as shown in fig. 2, and 3 evaporation sources are arranged on a shell on the side surface of a vacuum cavity in the semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production. Optionally, a door capable of being opened and closed is arranged on the bottom surface of one side of the vacuum cavity, and a handle is further arranged on the door capable of being opened and closed, so that a growth substrate can be conveniently placed into the vacuum cavity, and the deposited substrate can be conveniently taken out of the vacuum cavity.

The sample platform is arranged in the vacuum cavity and is of a regular prism structure, a buckle is arranged on the side surface of the sample platform and used for placing a growth substrate, and a rotating shaft is arranged at the central shaft position of the sample platform, which is perpendicular to the upper bottom surface and the lower bottom surface of the sample platform and can drive the sample platform to rotate.

Alternatively, the sample stage may be a regular quadrangular prism, a regular pentagonal prism or others, and accordingly, the number of the side surfaces of the sample stage is 4, 5 or others, so that compared with the conventional planar sample stage, the sample stage with the three-dimensional structure can accommodate multiple groups of growth substrates at the same time, and the area of the side surfaces of the sample stage can also be designed according to the diameters of the growth substrates.

Illustratively, as shown in fig. 3, each side surface of the sample stage is provided with a catch, which can fix the growth substrate on the side surface of the sample stage, alternatively the distance between the two catches can be adjusted according to the diameter of the growth substrate.

The electric motor is arranged outside the vacuum cavity and connected with the other end of the rotating shaft, can drive the sample table to rotate and can also control the rotating speed of the sample table.

As shown in fig. 4, the sample stage provided in the embodiment of the present application is a regular hexagonal prism, which includes six side surfaces, each of which can be placed with a growth substrate thereon. The center shaft of the regular hexagonal prism is provided with a rotating shaft, the other end of the rotating shaft is connected with an electric motor, and the rotating shaft is driven to rotate by the electric motor, so that the sample table is driven to rotate. The rotating speed of the sample table can be controlled by an electric motor, and the time of each growth substrate at the nozzle of the evaporation source can be changed so as to deposit a film with a preset thickness on the surface of the growth substrate.

Specifically, the number of evaporation sources is less than or equal to the number of growth substrates, so as to ensure that the nozzle of each evaporation source can face different growth substrates on the side surface of the sample stage.

For example, as shown in fig. 2, when the sample stage is a regular hexagonal prism, the number of growth substrates is 6, 3 evaporation sources are provided in this embodiment, and each evaporation source faces the growth substrate on a different side surface, respectively, alternatively, in other embodiments, the evaporation sources may be provided adjacently, respectively, facing the growth substrate on an adjacent side surface of the sample stage.

The in-situ high-resolution monitoring module is arranged outside the vacuum cavity and is opposite to the first monitoring hole on the side surface shell of the vacuum cavity and used for monitoring the surface morphology of the film.

The Raman monitoring module is arranged outside the vacuum cavity and is opposite to the second monitoring hole on the side surface shell of the vacuum cavity and used for monitoring the structure of the film.

The X-ray monitoring module is arranged outside the vacuum cavity and is opposite to the third monitoring hole on the side surface shell of the vacuum cavity and used for monitoring the crystal state and the crystal structure of the film.

Illustratively, as the stage rotates, the in-situ high-resolution monitoring module, the raman monitoring module, and the X-ray monitoring module may monitor each growth substrate on the stage side surface in real time through the monitoring aperture in the vacuum chamber side.

The in-situ real-time monitoring system for the deposition of the semiconductor thin films, which is applied to industrial mass production, can not only simultaneously grow a plurality of groups of growth substrates, but also enable an evaporation source to be opposite to the growth substrates, improve the uniformity of the thin films, and control the rotating speed of the sample table through an electric motor so as to control the residence time of each growth substrate at the nozzle of the evaporation source, thereby depositing the thin films with preset thickness. In the film deposition process, the surface morphology, the structure, the crystal state and the crystal structure of the film are monitored in real time through an in-situ high-resolution monitoring module, a Raman monitoring module and an X-ray diffraction module, so that the quality of the film is ensured.

In some embodiments of the present application, the type of evaporation source on the side housing of the vacuum chamber is the same as the number of layers of the film to be deposited.

For example, when it is desired to deposit three thin films on the surface of the growth substrate, the evaporation source as shown in fig. 2 may be three evaporation sources of different evaporation materials for depositing the first thin film, the second thin film, and the third thin film on the surface of the growth substrate, respectively.

Specifically, the nozzle of each evaporation source is also provided with a baffle, and when one evaporation source works, the baffles at the nozzle of the other evaporation sources are closed so as to prevent the simultaneous work of the evaporation sources of different evaporation materials from affecting the film deposition of the growth substrate in the vacuum cavity.

When multi-component material growth is carried out, multiple evaporation sources work simultaneously to influence adjacent growth substrates, in order to avoid the influence, in the embodiment of the application, the baffle is arranged at the nozzle of each evaporation source, the baffle at the nozzle of the corresponding evaporation source is opened according to the evaporation materials required by film growth, and the baffles at the nozzle of other evaporation sources are closed, so that the mixing of different evaporation materials in the film growth process is avoided, and the quality of the film is influenced.

Optionally, the evaporation source is further connected with a controller for controlling the evaporation rate of the evaporation source.

The controller connected with each evaporation source can control the evaporation rate of the evaporation source to deposit films with different thicknesses on the surface of the growth substrate.

For example, when the preset thickness of the thin film is 1 nm, the evaporation rate of the evaporation source may be controlled to be 0.1 nm per second, and at this time, a thin film of 1 nm may be deposited on the growth substrate by leaving the growth substrate at the evaporation source nozzle for 10 seconds.

Specifically, the in-situ high-resolution morphology monitoring module comprises:

and the spectrometer submodule is used for projecting a laser light source to the surface of the growth base, and the laser light source acts on the surface of the growth substrate and emits back light signals after being absorbed.

And the optical detector sub-module is used for detecting the return optical signal.

And the high-resolution image acquisition sub-module is used for acquiring image information of the surface of the growth substrate.

And the monitoring module is used for connecting the optical detector sub-module and the high-resolution image acquisition sub-module and determining the spectrum data and the morphology data of the film according to the return light signals and the image information.

The in-situ high-resolution morphology monitoring module controls the time delay between the projection laser light source of the spectrometer submodule and the acquisition of image information of the image acquisition submodule, so that the spectrum data and morphology data of the film surface can be monitored simultaneously in the film deposition process.

Specifically, the raman monitoring module is a raman spectrometer, and the X-ray monitoring module is an X-ray diffractometer.

The raman spectrometer can rapidly, simply, reproducibly and nondestructively analyze the structure of the deposited film on the surface of the growth substrate qualitatively and quantitatively. The X-ray diffractometer is one of the most commonly used material characterization methods at present, and besides general phase analysis, single crystal analysis, structural analysis, measurement of crystallite size, macroscopic and microscopic stress and the like can be performed, so that the X-ray diffractometer is adopted to monitor the crystal state and the crystal structure of the thin film in the embodiment of the application.

Alternatively, as shown in fig. 2, the first monitoring hole, the second monitoring hole and the third monitoring hole on the side surface of the vacuum cavity are respectively opposite to the growth substrate on the side surface of the sample stage, and the in-situ high-resolution morphology monitoring module, the raman monitoring module and the X-ray monitoring module can be used for better monitoring the morphology, the structure, the crystal state and the crystal structure of the thin film deposited on the surface of each growth substrate by rotating the sample stage through the electric motor. In other embodiments, three monitoring holes may be positioned adjacent to each other, facing the growth substrate on adjacent side surfaces of the sample stage.

Optionally, in other embodiments of the present application, the in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production further includes a display device connected to the in-situ high resolution morphology monitoring module, the raman monitoring module and the X-ray monitoring module, for displaying morphology data, structure data, crystal state data and crystal structure data of the thin film on the surface of the growth substrate on line.

Example 2

Based on the semiconductor thin film deposition in-situ real-time monitoring system applied to industrial mass production provided in the above embodiment 1, when the number of preset deposited thin film layers is 1, the required evaporation material is one, and correspondingly, the evaporation source arranged on the side surface of the vacuum cavity is also one, so that a plurality of evaporation sources of the same evaporation material can be arranged on the side surface shell of the vacuum cavity, so as to improve the rate of thin film deposition.

For example, when 2 evaporation sources of the same evaporation material are provided, the evaporation rate of each evaporation source is 0.2 nm per second, the preset thickness of thin film deposition is 2 nm, the number of growth substrates is 6, the rotation speed of the electric motor is 6 degrees per second, and only 30 seconds are required to be rotated to deposit a thin film of 2 nm on all six growth substrate surfaces.

When the number of the preset deposited film layers is 2 or more, the required evaporation materials are more than two, correspondingly, the types of evaporation sources arranged on the side surface of the vacuum cavity are equal to the number of the preset deposited film layers, and different film layers are deposited on the growth substrate by controlling the opening and closing states of the baffle plates at the positions of the different evaporation source nozzles and rotating the sample table.

For example, when two vapor deposition materials are required for thin film deposition, and the thickness of the deposited thin film is 0.2 nm for each vapor deposition material, and the number of the growth substrates is 6, a first evaporation source and a second evaporation source may be provided on the vacuum chamber side housing, and the evaporation rate of the first evaporation source and the evaporation rate of the second evaporation source are both set to 0.2 nm per second, and the rotation speed of the electric motor is set to 6 degrees per second. And opening a baffle at the first evaporation source nozzle, rotating for 60 seconds to deposit a first film of 2 nanometers on the surfaces of six growth substrates, closing the baffle at the first evaporation source nozzle, opening the baffle at the second evaporation source nozzle, and rotating for 60 seconds at the same rotating speed to deposit a second film of 2 nanometers on the surfaces of the first films of the six growth substrates.

In order to better explain the setting method and the using method of the evaporation source when the multicomponent material grows, the following description is given with the preset deposited film layer number of 3 layers: the sample stage in this embodiment is a regular hexagonal prism sample stage, on six side surfaces of which growth substrates are provided, the number of kinds of evaporation sources is equal to the number of layers of film deposited in advance, and therefore, this embodiment provides three evaporation sources with different evaporation materials, and the number of each evaporation source is 1, which is defined as a first evaporation source, a second evaporation source, and a third evaporation source, respectively.

The evaporation material of the first evaporation source is pentacene, and the preset deposition thickness of the film is 1 nanometer; the evaporation material of the second evaporation source is NPB, and the preset deposition thickness of the film is 2 nanometers; the evaporation material of the third evaporation source is copper phthalocyanine, and the preset deposition thickness of the film is 3 nanometers.

Specifically, the process of thin film deposition of a growth substrate on a sample stage is as follows:

and opening a baffle at the nozzle of the first evaporation source, closing the baffles at the nozzle of the second evaporation source and the nozzle of the third evaporation source, setting the evaporation rate of the first evaporation source to 0.1 nanometer per second through a controller connected with the first evaporation source, setting the rotation speed of an electric motor to 6 degrees per second, and setting the time to 60 seconds, so that the pentacene film with the thickness of 1 nanometer is deposited on the surfaces of six growth substrates on the six side surfaces of the sample stage.

Closing a baffle at a first evaporation source nozzle, opening a baffle at a second evaporation source nozzle, setting the evaporation rate of the second evaporation source to be 0.2 nanometers per second through a controller connected with the second evaporation source, and setting the rotation speed of an electric motor to be 6 degrees per second for 60 seconds, so that NPB films of 2 nanometers are deposited on the surfaces of six growth substrates on the side surface of a sample stage.

Closing a baffle at the second evaporation source nozzle, opening a baffle at the third evaporation source nozzle, setting the evaporation rate of the third evaporation source to be 0.3 nanometers per second through a controller connected with the third evaporation source, and setting the rotation speed of an electric motor to be 6 degrees per second for 60 seconds, so that copper phthalocyanine films of 3 nanometers are deposited on the surfaces of six growth substrates on the side surface of the sample stage.

When the semiconductor film deposition in-situ real-time monitoring system applied to industrial mass production provided by the application is used for growing single-component materials, films with preset thickness can be deposited on the surface of a growing substrate by increasing the number of evaporation sources, controlling the evaporation rate of the evaporation sources and controlling the rotating speed of a sample table. When the multi-component material is grown, the deposition of the multi-layer film can be realized by changing the types of evaporation source evaporation materials, and films with different preset thicknesses can be deposited on the surface of the growing substrate by controlling the evaporation rate of each evaporation source and the rotating speed of the sample table. In addition, no matter how many layers of the deposited film are, the nozzle of each evaporation source can be opposite to each growth substrate through the rotation of the sample table in the deposition process, so that the uniformity of the film is ensured.

Example 3

Based on the in-situ real-time monitoring system for semiconductor film deposition applied to industrial mass production provided in the above embodiment, the embodiment of the present application further provides a method for in-situ real-time monitoring for semiconductor film deposition applied to industrial mass production, as shown in fig. 5, including:

s10: the growth substrate was placed on the side surface of the sample stage inside the vacuum chamber.

S20: when the number of layers of the film deposited in advance is 1, a baffle plate at a nozzle of the evaporation source is opened, the rotating speed of the electric motor and the evaporation rate of the evaporation source are set according to the preset thickness of the film, and the sample table is driven to rotate by the electric motor until the film with the preset thickness is deposited on the surface of the growth substrate on each side surface of the sample table.

S30: when the number of the preset deposited thin film layers is N, N is more than or equal to 2, opening a baffle at the nozzle of the first evaporation source, closing baffles at the nozzles of other evaporation sources, and setting the rotating speed of the electric motor and the evaporation rate of the first evaporation source according to the first preset thickness corresponding to the first thin film layer.

S40: the sample stage is driven to rotate by the electric motor until a first layer of thin film of a first preset thickness is deposited on the surface of the growth substrate on each side surface of the sample stage.

S50: opening a baffle at the nozzle of the nth evaporation source, closing the baffles at the nozzles of other evaporation sources, and setting the rotating speed of the electric motor and the evaporation rate of the nth evaporation source according to the corresponding nth preset thickness of the nth film.

S60: the sample stage is driven to rotate by the electric motor until the surface of the growth substrate on each side surface of the sample stage is deposited with an nth layer of thin film of an nth preset thickness.

It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present application will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.

Claims (10)

1. The in-situ real-time monitoring system for the deposition of the semiconductor thin film applied to industrial mass production is characterized by comprising the following components:

the vacuum cavity is of a cylinder structure, three monitoring holes and an evaporation source are formed in a side surface shell of the vacuum cavity, and the evaporation source penetrates through the side surface shell of the vacuum cavity;

the sample table is arranged in the vacuum cavity, is of a regular prism structure, is provided with buckles on the side surfaces, is used for placing a growth substrate, and is provided with a rotating shaft perpendicular to the central shaft of the upper bottom surface and the lower bottom surface of the sample table;

the electric motor is arranged outside the vacuum cavity, connected with one end of the rotating shaft and used for controlling the rotating speed of the sample table;

the in-situ high-resolution morphology monitoring module is arranged outside the vacuum cavity and is opposite to the first monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the surface morphology of the film;

the Raman monitoring module is arranged outside the vacuum cavity and is opposite to the second monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the structure of the film;

the X-ray monitoring module is arranged outside the vacuum cavity and is opposite to the third monitoring hole on the side surface shell of the vacuum cavity, and is used for monitoring the crystal state and the crystal structure of the film;

the number of the evaporation sources is smaller than or equal to that of the growth substrates, and the nozzle of each evaporation source is opposite to the growth substrates on the surfaces of different sides of the sample table respectively.

2. The in-situ real-time monitoring system for semiconductor thin film deposition for industrial mass production of claim 1, wherein the first monitoring hole, the second monitoring hole, and the third monitoring hole are respectively opposite to the growth substrates on different side surfaces of the sample stage.

3. The in-situ real-time monitoring system for deposition of semiconductor thin films for industrial mass production according to claim 1, wherein the evaporation source is the same as the number of thin films deposited in advance.

4. The in-situ real-time monitoring system for deposition of semiconductor thin films for industrial mass production according to claim 3, wherein the nozzles of the evaporation sources are provided with baffles, and when one evaporation source works, the baffles at the nozzles of the other evaporation sources are closed.

5. The in-situ real-time monitoring system for semiconductor film deposition applied to industrial mass production according to claim 1, wherein the evaporation sources are connected with a controller for controlling the evaporation rate of the evaporation sources.

6. The in-situ real-time monitoring system for semiconductor thin film deposition for industrial mass production of claim 1, wherein the in-situ high-resolution morphology monitoring module comprises:

the spectrometer submodule is used for projecting a laser light source to the surface of the growth base, and the laser light source acts on the surface of the growth substrate and emits a light signal after being absorbed;

the optical detector sub-module is used for detecting the return light signal;

the high-resolution image acquisition sub-module is used for acquiring image information of the surface of the growth substrate;

and the monitoring module is used for connecting the optical detector sub-module and the high-resolution image acquisition sub-module and determining the spectrum data and the morphology data of the film according to the return light signal and the image information.

7. The in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production of claim 1, wherein the raman monitoring module is a raman spectrometer.

8. The in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production of claim 1, wherein the X-ray monitoring module is an X-ray diffractometer.

9. The in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production according to claim 1, further comprising a display device connected with the in-situ high resolution morphology monitoring module, the raman monitoring module and the X-ray monitoring module for displaying morphology data, structure data, crystal state data and crystal structure data of the thin film on line.

10. A method for in-situ real-time monitoring of semiconductor thin film deposition applied to industrial mass production, which is used in the in-situ real-time monitoring system for semiconductor thin film deposition applied to industrial mass production according to any one of claims 1 to 9, and is characterized by comprising the following steps:

placing a growth substrate on a side surface of a sample stage inside a vacuum chamber;

when the number of layers of the film deposited in advance is 1, opening a baffle at a nozzle of an evaporation source, setting the rotating speed of an electric motor and the evaporation rate of the evaporation source according to the preset thickness of the film, and driving the sample table to rotate through the electric motor until the film with the preset thickness is deposited on the surface of a growth substrate on each side surface of the sample table;

when the number of the preset deposited thin film layers is N, N is more than or equal to 2, opening a baffle plate at a first evaporation source nozzle, closing baffle plates at other evaporation source nozzles, and setting the rotating speed of the electric motor and the evaporation rate of the first evaporation source according to a first preset thickness corresponding to the first thin film layer;

driving the sample stage to rotate through the electric motor until a first layer of film with a first preset thickness is deposited on the surface of the growth substrate on each side surface of the sample stage;

opening a baffle at the nozzle of an nth evaporation source, closing baffles at the nozzles of other evaporation sources, and setting the rotating speed of the electric motor and the evaporation rate of the nth evaporation source according to the nth preset thickness corresponding to the nth film;

and driving the sample stage to rotate through the electric motor until the surface of the growth substrate on each side surface of the sample stage is deposited with an N layer film with an N preset thickness.