CN116759882A - Multi-wavelength Raman laser - Google Patents
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- CN116759882A CN116759882A CN202311040449.6A CN202311040449A CN116759882A CN 116759882 A CN116759882 A CN 116759882A CN 202311040449 A CN202311040449 A CN 202311040449A CN 116759882 A CN116759882 A CN 116759882A
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- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 69
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 229910009372 YVO4 Inorganic materials 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000005086 pumping Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000012544 monitoring process Methods 0.000 claims description 20
- 238000002310 reflectometry Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 10
- 230000007704 transition Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to the technical field of lasers, in particular to a multi-wavelength Raman laser which comprises a YVO4 crystal laser medium, a four-sided mirror square optical cavity structure, a resonance pumping source with the wavelength of 808nm, a coupler, a cooling system and a control system, wherein the coupler is arranged on the optical cavity structure; by adopting the Nd-YVO 4 crystal as a laser medium, the laser medium can convert the input light energy into laser output with higher efficiency, and can not generate a large amount of heat energy in the process, thereby reducing the influence of thermal effect on the stability of the laser; the heat sink and cooling system can effectively transfer and dissipate heat generated by the laser while providing better thermal management so that the laser can withstand higher power output by reducing crystal temperature and controlling thermal effects; the adoption of the resonance pumping source with the wavelength of 808nm effectively reduces the quantum loss between the laser and the pumping light, greatly improves the quantum efficiency, reduces the thermal effect of the laser crystal, and comprehensively improves the stability of the laser.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a multi-wavelength Raman laser.
Background
The multi-wavelength raman laser is a laser realizing multiple wavelength output through raman scattering effect, and has wide application fields such as optical communication, life sciences, etc., however, the stability of the existing multi-wavelength raman laser needs to be improved, the thermal effect is an important stability influencing factor in the multi-wavelength raman laser, when the laser crystal absorbs pumping light energy in the working process, heat is generated, when the heat cannot be effectively emitted, the temperature of the laser crystal is raised, the refractive index change of the crystal is caused, and the thermal effect can influence the wavelength and the light intensity of the laser output, so that the stability of the laser is reduced.
Disclosure of Invention
The invention aims to provide a multi-wavelength Raman laser, which solves the technical difficulty that the stability of the existing multi-wavelength Raman laser is required to be improved in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a multi-wavelength Raman laser comprises an Nd-YVO 4 crystal laser medium, a four-sided mirror square optical cavity structure, a resonance pump source with the wavelength of 808nm, a coupler, a cooling system and a control system, wherein the Nd-YVO 4 crystal laser medium, the four-sided mirror square optical cavity structure, the resonance pump source with the wavelength of 808nm and the coupler form a laser device together.
The Nd: YVO4 crystal laser medium is a bonding crystal of 4x14 mm & lt 3 & gt YVO4/Nd: YVO4/YVO 4.
The length of the Nd-YVO 4 crystal in the middle of the YVO4 crystal laser medium is 10mm, two ends of the Nd-YVO 4 crystal are respectively bonded with one pure YVO4 crystal with the length of 2mm, and the doping concentration of the two crystals is 0.3at percent.
Two of the four-sided mirror square optical cavity structure are flat plates coated with high-reflection films, and the other two boundary mirrors have reflectivity.
The resonance pumping source with the wavelength of 808nm is a semiconductor laser diode, and the power is up to 30W.
And a radiator is arranged on the resonance pump source with the wavelength of 808 nm.
The coupler is a Bragg grating with adjustable angle, and the output wavelength is changed by rotation.
The cooling system is used for adjusting the working temperature of the semiconductor laser diode.
The control system comprises a current control module, a monitoring module and an adjusting module.
The current control module is used for realizing fine adjustment of output power by accurately controlling the working current of the semiconductor laser diode, adjusting the current value according to application requirements, monitoring and feeding back the current state of the semiconductor laser diode in real time, and directly influencing the emission intensity of the semiconductor laser diode by changing the current, so that the purpose of controlling the output power of the laser is achieved;
the monitoring module monitors the input power of the laser in real time, and the control system can grasp the magnitude of the pump source power received by the laser by acquiring the input power information, and can correspondingly adjust and optimize the pump source power according to the detected input power so as to ensure that the laser operates in a proper power range; the monitoring module also monitors the output wavelength of the laser, and the control system can master the characteristics of optical signals with different wavelengths generated by the laser by monitoring the output wavelength in real time, and then monitors the output wavelength and accurately adjusts the output wavelength according to the required specific wavelength and wavelength range;
the adjusting module adjusts the angle of the Bragg grating and the length of the cavity of the square optical cavity structure of the four-sided mirror according to preset parameters to realize the accurate adjustment of the output of the multi-wavelength Raman laser, and calculates according to preset parameters and target requirements as well as the monitored input power and output wavelength, so as to determine the adjustment quantity of the angle and the length of the cavity of the Bragg grating; the adjusting module can enable the Bragg grating to rotate towards different angles by controlling the motor and the driver, so that the output wavelength of the laser is changed; the adjusting module can change the length of the cavity by adjusting the fine adjusting screw.
Compared with the prior art, the invention has the beneficial effects that:
(1) Effectively reducing the thermal effect: by adopting the Nd YVO4 crystal as a laser medium, the laser medium has higher photoelectric conversion efficiency, can convert input light energy into laser output with higher efficiency, and can not generate a large amount of heat energy in the process, and meanwhile, the Nd YVO4 crystal has higher heat conductivity, which means that the Nd YVO4 crystal can more effectively conduct generated heat, and the good heat conductivity can reduce the temperature rise in the crystal, thereby reducing the influence of the heat effect on the stability and the optical performance of the laser; the design of the radiator and the cooling system can effectively transmit and dissipate heat generated by the laser, and better heat management is provided, so that the laser can bear higher power output, and the service life of the laser can be prolonged by reducing the crystal temperature and controlling the heat effect; the adoption of the resonance pumping source with the wavelength of 808nm effectively reduces the quantum loss between the laser and the pumping light, greatly improves the quantum efficiency, reduces the thermal deposition in the gain medium and reduces the thermal effect of the laser crystal, thereby comprehensively improving the stability of the laser.
(2) Stable tunable wavelength: the Bragg grating with adjustable angle is introduced as an output coupler to realize the selection and tuning of the wavelength of the laser, so that the multi-wavelength Raman laser has larger wavelength range and flexibility, and meets the requirements of different application scenes.
(3) Feedback control system: by combining an intelligent control system, a feedback loop and a self-adaptive algorithm, the real-time monitoring and adjustment of parameters such as pump source power, wavelength and frequency of the laser are realized, so that the stability and wavelength precision of the laser are improved, and the reliability of the laser in long-time operation is ensured.
Drawings
FIG. 1 is a schematic diagram of a laser device of a multi-wavelength Raman laser according to the present invention;
FIG. 2 is a schematic diagram of the overall system framework of the multi-wavelength Raman laser of the present invention;
fig. 3 is a schematic diagram of a control system framework of the multi-wavelength raman laser of the present invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus consistent with some aspects of the disclosure as detailed in the accompanying claims.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1 to 3, the multi-wavelength raman laser comprises an Nd: YVO4 crystal laser medium, a four-sided mirror square optical cavity structure, a resonant pump source with a wavelength of 808nm, a coupler, a cooling system and a control system, wherein the Nd: YVO4 crystal laser medium, the four-sided mirror square optical cavity structure, the resonant pump source with a wavelength of 808nm and the coupler together form a laser device.
The Nd-YVO 4 crystal laser medium is used for generating and amplifying laser, the Nd-YVO 4 crystal has a higher absorption section and a longer up-conversion service life, can realize high-efficiency laser conversion in a shorter wavelength range, can generate higher laser power output by absorbing energy of an external light source and converting the energy into laser radiation, meanwhile, the Nd-YVO 4 crystal has a wider laser gain spectrum bandwidth and can cover a common wavelength range of a laser, on the other hand, the Nd-YVO 4 crystal has good heat conductivity, can effectively conduct generated heat, thereby reducing the crystal temperature and improving the operation stability of the laser, is helpful for reducing the risk of crystal damage, and prolongs the service life of the laser, the Nd-YVO 4 crystal laser medium is a bonding crystal of YVO 4/Nd-YVO 4 of 4x4 mm & lt 3 & gt, the Nd-YVO 4 crystal has a length of 10mm in the middle of the Nd-YVO 4 crystal, and the bonding 2 mm-YVO 4 crystal has good heat conductivity, and the bonding 2-YVO 4 crystal bonding part cannot be doped with the laser gradient, so that the thermal gradient of the two-doped crystals can be further reduced, and the effect of the two-phase-doped crystal can be further reduced, and the effect of the thermal gradient is realized.
The four-sided square optical cavity structure is used for reflecting and amplifying light, can support multiple wavelengths to generate laser output simultaneously, two of the four-sided square optical cavity structure are flat plates coated with high-reflection films, the other two boundary mirrors have a certain reflectivity, the four-sided square optical cavity structure has a higher mode quality factor (Q value), can provide excellent mode selectivity, can effectively limit undesired longitudinal modes and radial modes, thereby enhancing the stability and reliability of a system and reducing stray laser output, and can realize accurate tuning of laser wavelength by adjusting the cavity length or other control parameters, and the tuning range of the square optical cavity is generally relatively wide due to the geometric characteristics of the square cavity and can cover a wide wavelength range.
The device for exciting the laser medium by using the resonance pump source with the wavelength of 808nm as energy is characterized in that the resonance pump source with the wavelength of 808nm is a semiconductor laser diode, the power is up to 30W, the process of transition from an excited state to an upper energy level of laser is eliminated by using a resonance pump mode, the quantum loss is reduced, the thermal effect is fundamentally lightened, and a radiator is arranged on the resonance pump source with the wavelength of 808nm, so that the purpose of taking away heat is achieved, and the service life of the laser is prolonged.
The coupler is used for realizing the input and output of laser, can couple (transmit) an external light source into a four-sided mirror square optical cavity structure, or can output a laser beam from the four-sided mirror square optical cavity structure, is an angle-adjustable Bragg grating, a traditional optical element generally has fixed wavelength characteristics, and the angle-adjustable Bragg grating can change the output wavelength through rotation, so that the angle-adjustable Bragg grating coupler is very beneficial to the operation requirement of multiple wavelengths, has high-precision wavelength selection capability and good repeatability, can realize precise wavelength selection through fine adjustment of the rotation angle, can maintain consistent performance in different use processes, and can optimize the coupling efficiency between an optical signal and the laser or other optical elements, and the coupler is beneficial to improving the performance and reliability of the system and reducing the optical loss.
The cooling system is used for adjusting the working temperature of the semiconductor laser diode, a large amount of heat can be generated in the working process of the laser, if the heat is not timely dissipated, the temperature of the laser can be rapidly increased, and possibly the laser medium or other elements are damaged.
The control system comprises a current control module, a monitoring module and an adjusting module.
The current control module can realize fine adjustment of output power by accurately controlling working current of the semiconductor laser diode, can adjust current value according to application requirements, can monitor and feed back current state of the semiconductor laser diode in real time, and can directly influence emission intensity of the semiconductor laser diode by changing current, thereby achieving the purpose of controlling output power of the laser.
The monitoring module monitors the input power of the laser in real time, the control system can master the magnitude of the pump source power received by the laser by acquiring the input power information, the working state and the performance stability of the laser can be determined, the control system can correspondingly adjust and optimize according to the detected input power so as to ensure that the laser operates in a proper power range, the monitoring module also monitors the output wavelength of the laser, and the control system can master the characteristics of optical signals with different wavelengths generated by the laser by detecting the output wavelength in real time, so that the control system is very important for the multi-wavelength Raman laser, and can monitor the output wavelength and accurately adjust according to the required specific wavelength or wavelength range.
The adjusting module adjusts the angle of the Bragg grating and the length of the cavity of the square optical cavity structure of the four-sided mirror according to preset parameters to realize the accurate adjustment of the output of the multi-wavelength Raman laser, and calculates according to preset parameters and target requirements as well as the monitored input power and output wavelength, so as to determine the adjustment quantity of the angle and the length of the cavity of the Bragg grating; for the adjustment of the Bragg grating angle, the adjusting module can enable the grating to rotate towards different angles by controlling a motor and a driver, so that the output wavelength of the laser is changed, and fine adjustment of the output wavelength can be realized by accurate control; for cavity length adjustment of the four-sided mirror square optical cavity structure, the adjusting module can change the length of the cavity by adjusting the fine adjusting screw, and gain characteristics and frequency stability of the laser can be optimized by tiny adjustment.
According to the invention, the YVO4 crystal is used as a laser medium, has higher photoelectric conversion efficiency, can convert input light energy into laser output with higher efficiency, and can not generate a large amount of heat energy in the process, and meanwhile, the YVO4 crystal has higher heat conductivity, which means that the YVO4 crystal can more effectively conduct generated heat, and the good heat conductivity can reduce the temperature rise in the crystal, so that the influence of the heat effect on the stability and optical performance of the laser is reduced; the design of the radiator and the cooling system can effectively transmit and dissipate heat generated by the laser, and better heat management is provided, so that the laser can bear higher power output, and the service life of the laser can be prolonged by reducing the crystal temperature and controlling the heat effect; the adoption of the resonance pumping source with the wavelength of 808nm effectively reduces the quantum loss between the laser and the pumping light, greatly improves the quantum efficiency, reduces the thermal deposition in the gain medium, and reduces the thermal effect of the laser crystal, thereby comprehensively improving the stability of the laser; the Bragg grating with adjustable angle is introduced as an output coupler to realize the selection and tuning of the wavelength of the laser, so that the multi-wavelength Raman laser has larger wavelength range and flexibility, and meets the requirements of different application scenes; by combining an intelligent control system, a feedback loop and a self-adaptive algorithm, the real-time monitoring and adjustment of parameters such as pump source power, wavelength and frequency of the laser are realized, so that the stability and wavelength precision of the laser are improved, and the reliability of the laser in long-time operation is ensured.
Example two
Referring to fig. 1 to 3, the first difference between the present embodiment and the embodiment is that:
a multi-wavelength Raman laser comprises an Nd-YVO 4 crystal laser medium, a four-sided mirror square optical cavity structure, a resonant pump source with the wavelength of 880nm, a coupler, a cooling system and a control system, wherein the Nd-YVO 4 crystal laser medium, the four-sided mirror square optical cavity structure, the resonant pump source with the wavelength of 808nm and the coupler jointly form a laser device.
The Nd: YVO4 crystal laser medium is a bonding crystal of 4x14 mm & lt 3 & gt YVO4/Nd: YVO4, the length of the Nd: YVO4 crystal in the middle of the Nd: YVO4 crystal laser medium is 10mm, two ends are respectively bonded with one 2mm pure YVO4 crystal, and the doping concentration of the two crystals is 0.3 at%.
Two of the four-sided mirror square optical cavity structure are flat plates coated with high-reflection films, and the other two boundary mirrors have reflectivity.
The resonance pump source with the wavelength of 880nm is a semiconductor laser diode, the power is up to 30W, a radiator is arranged on the resonance pump source with the wavelength of 880nm, the Raman spectrum of the Nd-YVO 4 crystal shows that the strongest absorption peak is near 808nm, besides 808nm, the Nd-YVO 4 crystal also has stronger absorption peak near 880nm, therefore, the semiconductor laser diode near 880nm can also be used as the pump source, in the traditional 808nm pumping process, the active particles firstly transition from the ground state energy level to the excited state energy level after absorbing incident light, then transition to the laser upper energy level through non-radiation, then transition to the different laser lower energy levels from the upper energy level, so as to radiate photons with different wavelengths, and when the 880nm resonance pump is used, the active particles absorb the energy of the incident light and then directly transition to the laser upper energy level, and the particles radiate photons downwards, so that the resonance pump technology eliminates the process of non-radiation transition of the particles, effectively reduces the loss between laser and the pump light, improves the efficiency of the laser upper energy level, greatly reduces the thermal efficiency of the quantum deposition medium, and greatly reduces the thermal effect of the quantum deposition medium.
The coupler is a Bragg grating with adjustable angle, and the output wavelength is changed by rotation.
The cooling system is used for adjusting the working temperature of the semiconductor laser diode.
The control system comprises a current control module, a monitoring module and an adjusting module.
The current control module is used for realizing fine adjustment of output power by accurately controlling the working current of the semiconductor laser diode, adjusting the current value according to application requirements, monitoring and feeding back the current state of the semiconductor laser diode in real time, and directly influencing the emission intensity of the semiconductor laser diode by changing the current, so that the purpose of controlling the output power of the laser is achieved;
the monitoring module monitors the input power of the laser in real time, and the control system can grasp the magnitude of the pump source power received by the laser by acquiring the input power information, and can correspondingly adjust and optimize the pump source power according to the detected input power so as to ensure that the laser operates in a proper power range; the monitoring module also monitors the output wavelength of the laser, and the control system can master the characteristics of optical signals with different wavelengths generated by the laser by monitoring the output wavelength in real time, and then monitors the output wavelength and accurately adjusts the output wavelength according to the required specific wavelength and wavelength range;
the adjusting module adjusts the angle of the Bragg grating and the cavity length of the square optical cavity structure of the four-sided mirror according to preset parameters to realize the accurate adjustment of the output of the multi-wavelength Raman laser, and performs self-adaptive algorithm calculation according to preset parameters and target requirements and the monitored input power and output wavelength to calculate the adjustment quantity of the angle and the cavity length of the Bragg grating required for realizing the preset parameters such as the input power ratio and the output power ratio; the adjusting module can enable the Bragg grating to rotate towards different angles by controlling the motor and the driver, so that the output wavelength of the laser is changed; the adjusting module can change the length of the cavity by adjusting the fine adjusting screw.
According to the invention, the YVO4 crystal is used as a laser medium, has higher photoelectric conversion efficiency, can convert input light energy into laser output with higher efficiency, and can not generate a large amount of heat energy in the process, and meanwhile, the YVO4 crystal has higher heat conductivity, which means that the YVO4 crystal can more effectively conduct generated heat, and the good heat conductivity can reduce the temperature rise in the crystal, so that the influence of the heat effect on the stability and optical performance of the laser is reduced; the design of the radiator and the cooling system can effectively transmit and dissipate heat generated by the laser, and better heat management is provided, so that the laser can bear higher power output, and the service life of the laser can be prolonged by reducing the crystal temperature and controlling the heat effect; the adoption of the resonant pumping source with the wavelength of 880nm effectively reduces the quantum loss between the laser and the pumping light, greatly improves the quantum efficiency, reduces the thermal deposition in the gain medium, and reduces the thermal effect of the laser crystal, thereby comprehensively improving the stability of the laser; the Bragg grating with adjustable angle is introduced as an output coupler to realize the selection and tuning of the wavelength of the laser, so that the multi-wavelength Raman laser has larger wavelength range and flexibility, and meets the requirements of different application scenes; by combining an intelligent control system, a feedback loop and a self-adaptive algorithm, the real-time monitoring and adjustment of parameters such as pump source power, wavelength and frequency of the laser are realized, so that the stability and wavelength precision of the laser are improved, and the reliability of the laser in long-time operation is ensured.
Claims (8)
1. A multi-wavelength raman laser, characterized by: the laser device comprises a YVO4 crystal laser medium, a four-sided mirror square optical cavity structure, a resonant pump source with the wavelength of 808nm, a coupler, a cooling system and a control system, wherein the Nd is formed by the YVO4 crystal laser medium, the four-sided mirror square optical cavity structure, the resonant pump source with the wavelength of 808nm and the coupler;
the cooling system is used for adjusting the working temperature of the semiconductor laser diode;
the control system comprises a current control module, a monitoring module and an adjusting module, wherein the current control module is used for precisely controlling the working current of the semiconductor laser diode to realize fine adjustment of output power; the monitoring module monitors the input power of the laser and the output wavelength of the laser in real time; the adjusting module adjusts the angle of the Bragg grating and the cavity length of the four-sided mirror square optical cavity structure according to preset parameters, and realizes the accurate adjustment of the output of the multi-wavelength Raman laser.
2. A multi-wavelength raman laser according to claim 1, wherein: the Nd: YVO4 crystal laser medium is a bonding crystal of 4x14 mm & lt 3 & gt YVO4/Nd: YVO4/YVO 4.
3. A multi-wavelength raman laser according to claim 2, wherein: the length of the Nd-YVO 4 crystal in the middle of the YVO4 crystal laser medium is 10mm, two ends of the Nd-YVO 4 crystal are respectively bonded with one pure YVO4 crystal with the length of 2mm, and the doping concentration of the two crystals is 0.3at percent.
4. A multi-wavelength raman laser according to claim 1, wherein: two of the four-sided mirror square optical cavity structure are flat plates coated with high-reflection films, and the other two boundary mirrors have reflectivity.
5. A multi-wavelength raman laser according to claim 1, wherein: the resonance pumping source with the wavelength of 808nm is a semiconductor laser diode, and the power is up to 30W.
6. A multi-wavelength raman laser according to claim 1, wherein: and a radiator is arranged on the resonance pump source with the wavelength of 808 nm.
7. A multi-wavelength raman laser according to claim 1, wherein: the coupler is a Bragg grating with adjustable angle, and the output wavelength is changed by rotation.
8. A multi-wavelength raman laser according to claim 1, wherein:
the current control module adjusts the current value according to the application requirement, can monitor and feed back the current state of the semiconductor laser diode in real time, and can directly influence the emission intensity of the semiconductor laser diode by changing the current, thereby achieving the purpose of controlling the output power of the laser;
the monitoring module acquires the input power information, the control system can master the power of the pump source received by the laser, and according to the detected input power, the control system can correspondingly adjust and optimize the power so as to ensure that the laser operates in a proper power range; the monitoring module monitors the output wavelength in real time, and the control system can master the characteristics of optical signals with different wavelengths generated by the laser, and then monitors the output wavelength and accurately adjusts the output wavelength according to the required specific wavelength and wavelength range;
the adjusting module calculates according to preset parameters and target requirements and the monitored input power and output wavelength, so as to determine the required Bragg grating angle and the adjusting quantity of the cavity length; the adjusting module can enable the Bragg grating to rotate towards different angles by controlling the motor and the driver, so that the output wavelength of the laser is changed; the adjusting module can change the length of the cavity by adjusting the fine adjusting screw.
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